Optimising illumination is essential for optimising the growth of phototrophic cells and their production of desired metabolites and/or biomass. This requires appropriate modulation of light and other key inputs and continuous online monitoring of their metabolic activities. Powerful non-invasive systems for cultivating heterotrophic organisms include shake flasks in online monitoring units, but they are rarely used for phototrophs because they lack the appropriate illumination design and necessary illuminatory power. This study presents the design and characterisation of a photosynthetic shake flask unit, illuminated from below by warm white light-emitting diodes with variable light intensities up to 2300 μmol m-2 s-1. The photosynthetic unit was successfully used, in combination with online monitoring of oxygen production, to cultivate Arthrospira platensis. In phototrophic growth under continuous light and a 16 h light/8 h dark cycle (light intensity: 180 μmol m-2 s-1), the oxygen transfer rate and biomass-related oxygen production were - 1.5 mmol L-1 h-1 and 0.18 mmol O2 gx-1 h-1, respectively. The maximum specific growth rate was 0.058 h-1, during the exponential growth phase, after which the biomass concentration reached 0.75 g L-1.

Les boites quantiques de semiconducteurs représentent une voie attractive pour la réalisation de sources de photon efficaces pour le transfert quantique de l’information, avec un fort potentiel de miniaturisation et d’intégration. Dans ce travail, les paires de photons intriqués sont générées via le déclin radiatif de bi-excitons, à partir de boite quantiques d’InAs auto-assemblées placé dans une jonction p-i-n. Dans une première série d’expérience d’interférence à deux photons, nous avons démontré des corrélations de polarisation non classiques et la capacité de deux photons à interférer. L’intrication a été démontrée avec une fidélité de 0.87±0.04, et une visibilité des interférences de 0.60±0.05. Nous avons ensuite réalisé le premier téléporteur injecté électriquement dans un circuit à fibre monomode. Une fidélité moyenne de 0.704±0.016 a été mesurée pour 6 états distribués symétriquement sur la sphère de Poincaré, ce qui supérieur à la limite classique de 2/3 et prouve la téléportation. Un dispositif modifié de téléportation permettant d’injecter des photons à partir d’un laser continu indépendant a été développé. L’interférence à deux photons entre sources différentes a été démontrée et des battements quantiques observés. La téléportation quantique des états de polarisation portés par les photons a été obtenue avec une fidélité moyenne 0.76±0.012. Le contrôle du spin des charges confinés dans les nanostructures tels que les boites quantiques requiert une compréhension profonde de la physique des matériaux constituant, y compris au niveau nucléaire. Ainsi, nous avons démontré le contrôle électrique de l’interaction hyperfine entre les spins électroniques et nucléaires en utilisant un composant à charge ajustable. La modélisation suggère que le mécanisme est contrôlé par le temps de corrélation hyperfine de l’électron et le temps de dépolarisation du noyau. / Semiconductor quantum dots offer an attractive route towards efficient and high-quality photon sources for optical quantum information applications, with potential for miniaturization and integration on chip. Here, entangled photon pairs are generated in the biexcitonic radiative cascade resulting from electrical excitation of InAs self-assembled quantum dots placed in a p-i-n diode. In a first set of experiments the non-classical polarisation correlations and the ability to interfere the photons in two-photon interference experiments was verified, finding entanglement fidelities of up to 0.87±0.04 and interference visibilities up to 0.60±0.05. Encouraged by the two-photon interference experiments, the first directly electrically driven teleporter was implemented in a single-mode fibre circuit. An average fidelity of 0.704±0.016 was achieved for six states symmetrically distributed on the Poincaré sphere, beating the classical limit of 2/3 and proving that quantum teleportation is taking place. A modified teleportation setup allowed for the accommodation of input photons from an independent CW laser. Two-photon interference between the dissimilar light sources was demonstrated and quantum beats could be observed. Quantum teleportation of polarisation states carried by laser photons was then performed with average fidelity 0.76±0.012. Controlling confined charge carriers in nano-scale systems such as quantum dots requires a deep understanding of the underlying material physics, even on the nuclear level. Voltage control of electron-nuclear hyperfine spin interactions was demonstrated using a charge-tuneable device. Modelling suggests that the mechanism is controlled mainly via the electron hyperfine correlation time and the nuclear depolarisation time.

Submitted by Rosivalda Pereira (mrs.pereira@ufma.br) on 2017-10-02T20:17:04Z No. of bitstreams: 1 ThiagoSantos.pdf: 1103502 bytes, checksum: 16ad7405a0ab31d83423293c43110ee8 (MD5) / Made available in DSpace on 2017-10-02T20:17:04Z (GMT). No. of bitstreams: 1 ThiagoSantos.pdf: 1103502 bytes, checksum: 16ad7405a0ab31d83423293c43110ee8 (MD5) Previous issue date: 2017-09-11 / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior / Fundação de Amparo à Pesquisa e ao Desenvolvimento Científico e Tecnológico do Maranhão / Instituto Nacional de Ciência e Tecnologia em Bioanalítica / A photoelectroanalytical sensor was developed, based on deoxyribonucleic acid (DNA) and anatase titanium dioxide (TiO2) nanoparticles sensitized with bis(ethylenedithio)tetrathiofulvalene (BEDT-TTF) for determination of the adrenaline, also denominated as epinephrine. The photosensor composite developed was denominated as BEDT-TTF/DNA/TiO2/ITO and shows a high photocurrent for the adrenaline under light emitting diode (LED) irradiation in comparison to each component of the composite material. Under optimized conditions, the BEDTTTF/DNA/TiO2/ITO sensor shows a linear response range from 10 nmol L-1 up to 100 μmol L-1 with a sensitivity of 8,1 nA L μmol-1 and limit of detection of 1 nmol L-1 for the adrenaline. The photoelectrochemical sensor showed high photocurrent to adrenaline in comparison to photocurrent response to ascorbic acid and uric acid. The BEDT-TTF/DNA/TiO2/ITO photoelectrochemical sensor was successfully applied to urine samples, with recovery values between 96 and 106%. / Um sensor fotoeletroanalítico foi desenvolvido, baseado em ácido desoxirribonucleico (DNA) e nanopartículas de dióxido de titânio anatase (TiO2) sensibilizadas com bis(etilenoditio)tetratiofulvaleno (BEDT-TTF) para a determinação de adrenalina, também denominada como epinefrina. O fotossensor compósito desenvolvido foi denominado como BEDT-TTF/DNA/TiO2/ITO e exibiu uma elevada fotocorrente para a adrenalina sob a irradiação do diodo emissor de luz (LED) em comparação com cada componente do material compósito. Sob condições otimizadas, o sensor BEDT-TTF/DNA/TiO2/ITO exibiu um intervalo de resposta linear de 10 nmol L-1 para 100 μmol L-1 com uma sensibilidade de 8,1 nA L μmol-1 e limite de detecção de 1 nmol L-1 para a adrenalina. O sensor fotoeletroquímico mostrou elevada fotocorrente para a adrenalina em comparação com a resposta de fotocorrente para ácido ascórbico e ácido úrico. O fotossensor BEDTTTF/DNA/TiO2/ITO foi aplicado com sucesso em amostras de urina, com valores de recuperação entre 96 e 106%.

Nesse trabalho apresentamos o estudo das propriedades ópticas e elétricas de filmes e dispositivos eletrônicos de polímeros luminescentes, poli(p-fenilenovinilenos) - PPVs, semicondutores, polianilinas - PANI, e derivados desses dois polímeros. São apresentadas todas as etapas de preparação e caracterização dos dispositivos, desde as rotas de síntese dos polímeros, até a modelagem de dispositivos eletroluminescentes e de transistores de efeito de campo. Os filmes luminescentes foram caracterizados por propriedades de absorção e emissão ópticas, e função pseudo-dielétrica, mostrando dependência com a presença de grupos laterais. Filmes de PANI, por sua vez, foram caracterizados através de medidas de condutividade complexa, e os resultados obtidos mostram-se típicos de sistemas sólidos desordenados. Para interpretá-las, foi utilizado o modelo de distribuição aleatória de barreiras de energia livre (random free energy barrier model - RFEB) aplicado como ajuste aos resultados experimentais. Outra característica importante dos PPVs, estudada nessa tese, foi à degradação em condições ambientais sob iluminação. Esse efeito foi acompanhado por medidas de absorção óptica e de elipsometria, mostrando que a combinação dos efeitos do oxigênio e da luz é a principal responsável pela degradação desse material. Para explicar tal efeito, elaboramos um modelo baseado nas propriedades individuais dos cromóforos do polímero e na substituição de ligações vinílicas C=C por ligações carbonilas C=O, cuja comparação com os resultados experimentais forneceu uma estimativa para a fração degradada do polímero como função do tempo de iluminação. Foram caracterizados dispositivos emissores de luz de PPVs através de medidas corrente vs. tensão e de condutividade complexa, que através do ajuste por modelos de circuitos equivalentes e pelo modelo RFEB forneceu grandezas fundamentais como a resistividade e a constante dielétrica da camada polimérica. Finalizando, transistores de efeito de campo de poli(o-metoxianilina) - POMA (um derivado da PANI) apresentaram modulação pela tensão de porta, e um modelo baseado nas propriedades de condução da POMA levando-se em conta gradientes de mobilidade e de densidade de portadores ortogonais à superfície do polímero foi elaborado e se ajustou muito bem aos resultados experimentais. / In this thesis we report the electrical and optical characterization of polymeric thin-film and luminescent and electronic devices. The studied materials were the luminescent poly(p-phenylenevinylenes) - PPVs, semiconducting polyanilines - PANI and their derivatives. All the steps in the material preparation are described: the synthesis and the film preparation. Also, the technological details of the fabrication of the devices, light-emitting diodes (LEDs) and field-effect transistor (FETs), are presented. Luminescent films were studied by optical absorption and emission and by ellipsometry measurements, giving emphasis on the influence of lateral groups. The PANI films were electrically investigated by the analysis of the complex conductivity, whose results were adjusted by the random free energy barrier model used for disordered solids. Another important investigation was related to the photodegradation of the luminescent polymers, a deleterious effect owing to a concomitant action of oxygen and light. To explain such effect we proposed a model based on the properties of individual cromophores of the molecules, and in the incorporation of ketone groups (C=O), cleaving the vinyl C=C bonds. The luminescent devices were electrically and optically characterized. The current density vs. voltage and complex impedance were fit by macroscopic models taking into account a hopping process, and an equivalent circuit was also used to study ITO/polymer/metal structures. Finally, the field-effect transistor made by poly(o-methoxyaniline) were experimentally studied and a model that assumes gradients of carrier density and mobility orthogonal to the film surface fit with good agreement the ISD vs. VSD for different gate voltages, VG.

Mit Seitenkettenpolystyrenen wurde ein neues Synthesekonzept für phosphoreszente polymere LED-Materialien aufgestellt und experimentell verifiziert. Zunächst erfolgten auf Grundlage strukturell einfacher Verbindungen Untersuchungen zum Einfluss von Spacern zwischen aktiven Seitengruppen und dem Polystyrenrückgrat. Es wurden Synthesemethoden für die Monomere etabliert, durch die aktive Elemente - Elektronen- und Lochleiter - mit und ohne diesen Spacer zugänglich sind. Durch Kombination dieser Monomere waren unter Hinzunahme von polymerisierbaren Iridium-Komplexen in unterschiedlicher Emissionswellenlänge statistische Terpolymere darstellbar. Es wurde gezeigt, dass die Realisierung bestimmter Verhältnisse zwischen Loch-, Elektronenleiter und Triplettemitter in ausreichender Molmasse möglich ist. Die Glasstufen der Polymere zeigten eine deutliche Strukturabhängigkeit. Auf die Lage der Grenzorbitale übten die Spacer nahezu keinen Einfluss aus. Die unterschiedlichen Makromoleküle kamen in polymeren Licht emittierenden Dioden (PLEDs) zum Einsatz, wobei ein deutlicher Einfluss der Spacereinheiten auf die Leistungscharakteristik der PLEDs festzustellen war: Sowohl Effizienz, Leuchtdichte wie auch Stromdichte waren durch den Einsatz der kompakten Makromoleküle ohne Spacer deutlich höher. Diese Beobachtungen begründeten sich hauptsächlich in der Verwendung der aliphatischen Spacer, die den Anteil im Polymer erhöhten, der keine Konjugation und damit elektrisch isolierende Eigenschaften besaß. Diese Schlussfolgerungen waren mit allen drei realisierten Emissionsfarben grün, rot und blau verifizierbar. Die besten Messergebnisse erzielte eine PLED aus einem grün emittierenden und spacerlosen Terpolymer mit einer Stromeffizienz von etwa 28 cd A-1 (bei 6 V) und einer Leuchtdichte von 3200 cd m-2 (bei 8 V). Ausgehend von obigen Ergebnissen konnten neue Matrixmaterialien aus dem Bereich verdampfbarer Moleküle geringer Molmasse in das Polystyrenseitenkettenkonzept integriert werden. Es wurden Strukturvariationen sowohl von loch- wie auch von elektronenleitenden Verbindungen als Homopolymere dargestellt und als molekular dotierte Systeme in PLEDs untersucht. Sieben verschiedene lochleitende Polymere mit Triarylamin-Grundkörper und drei elektronendefizitäre Polymere auf der Basis von Phenylbenzimidazol konnten erfolgreich in den Polymeransatz integriert werden. Spektroskopische und elektrochemische Untersuchungen zeigten kaum eine Veränderung der Charakteristika zwischen verdampfbaren Molekülen und den dargestellten Makromolekülen. Diese ladungstransportierenden Makro-moleküle wurden als polymere Matrizes molekular dotiert und lösungsbasiert zu Einschicht-PLEDs verarbeitet. Als aussichtsreichstes Lochleiterpolymer dieser Reihe, mit einer Strom-effizenz von etwa 33 cd A-1 (bei 8 V) und einer Leuchtdichte von 6700 cd m-2 (bei 10 V), stellte sich ein Triarylaminderivat mit Carbazolsubstituenten heraus. Als geeignetstes Matrixmaterial für die Elektronenleitung wurde ein meta-verknüpftes Di-Phenylbenzimidazol ausfindig gemacht, das in der PLED eine Stromeffizienz von etwa 20 cd A-1 (bei 8 V) und eine Leuchtdichte von 7100 cd m-2 (bei 10 V) erzielte. Anschließend wurden die geeignetsten Monomere zu Copolymeren kombiniert: Die lochleitende Einheit bildete ein carbazolylsubstituiertes Triarylamin und die elektronen-leitende Einheit war ein disubstituiertes Phenylbenzimidazol. Dieses Copolymer diente im Folgenden dazu, PLEDs zu realisieren und die Leistungsdaten mit denen eines Homopolymer-blends zu vergleichen, wobei der Blend die bessere Leistungscharakteristik zeigte. Mit dem Homopolymerblend waren Bauteileffizienzen von annähernd 30 cd A-1 (bei 10 V) und Leuchtdichten von 6800 cd m-2 neben einer Verringerung der Einsatzspannung realisierbar. Für die abschließende Darstellung bipolarer Blockcopolymere wurde auf die Nitroxid-vermittelte Polymerisation zurückgegriffen. Mit dieser Technik waren kontrollierte radikalische Polymersiationen mit ausgewählten Monomeren in unterschiedlichen Block-längen durchführbar. Diese Blockcopolymere kamen als molekular dotierte Matrizes in phosphoreszenten grün emittierenden PLEDs zum Einsatz. Die Bauteile wurden sowohl mit statistischen Copolymeren, wie auch mit Homopolymerblends in gleicher Zusammensetzung aber unterschiedlichem Polymerisationsgrad hinsichtlich der Leistungscharakteristik verglichen. Kernaussage dieser Untersuchungen ist, dass hochmolekulare Systeme eine bessere Leistungscharakteristik aufweisen als niedermolekulare Matrizes. Über Rasterkraft-mikroskopie konnte eine Phasenseparation in einem Größenbereich von etwa 10 nm für den hochmolekularen Homopolymerblend nachgewiesen werden. Für die Blockcopolymere war es nicht möglich eine Phasenseparation zu beobachten, was vorwiegend auf deren zu geringe Blocklänge zurückgeführt wurde. / A new synthetic approach for the synthesis of side chain polystyrenes was established and their use as phosphorescent polymers for polymer light emitting diodes (PLEDs) is shown by experiments. An assay was introduced to clarify influences on electroluminescent behavior for RGB-colored phosphorescent terpolymers with N,N-Di-p-tolyl-aniline as hole-transporting unit, 2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (tert-BuPBD) as electron-transporting unit, and different iridium complexes in RGB-colors as triplet emitting materials. All monomers were attached with spacer moieties to the “para” position of a polystyrene. PLEDs were built to study the electro-optical behavior of these materials. The gist was a remarkable influence of hexyl-spacer units to the PLED performance. For all three colors only very restricted PLED performances were found. In comparison RGB-terpolymers were synthesized with directly attached charge transport materials to the polymer backbone. For this directly linked systems efficiencies were 28 cd A−1 @ 6 V (green), 4.9 cd A−1 @ 5 V (red) and 4.3 cd A−1 @ 6 V (bluish). In summary it is assumed that an improved charge percolation pathways regarding to the higher content of semiconducting molecules and an improved charge transfer to the phosphorescent dopand in the case of the copolymers without spacers are responsible for the better device performance comparing the copolymers with hexyl spacers. It was found that the approach of the directly connected charge transport materials at the nonconjugated styrene polymer backbone is favored for further investigations as shown in the following. A series of styrene derived monomers with triphenylamine-based units, and their polymers have been synthesized and compared with the well-known structure of polymer of N,N′-bis(3-methylphenyl)-N,N′-diphenylbenzidine with respect to their hole-transporting behavior in PLEDs. A vinyltriphenylamine structure was selected as a basic unit, functionalized at the para positions with the following side groups: diphenylamine, 3-methylphenyl-aniline, 1- and 2-naphthylamine, carbazole, and phenothiazine. The polymers are used in PLEDs as host polymers for blend systems. It is demonstrated that two polymers are excellent hole-transporting matrix materials for these blend systems because of their good overall electroluminescent performances and their comparatively high glass transition temperatures. For the carbazole-substituted polymer (Tg = 246 °C), a luminous efficiency of 35 cd A−1 and a brightness of 6700 cd m−2 at 10 V is accessible. The phenothiazine-functionalized polymer (Tg = 220 °C) shows nearly the same outstanding PLED behavior. Hence, both these polymers outperform the well-known polymer of N,N′-bis(3-methylphenyl)-N,N′-diphenylbenzidine, showing only a luminous efficiency of 7.9 cd A−1 and a brightness of 2500 cd m−2 (10 V). Furthermore, novel styrene functionalized monomers with phenylbenzo[d]imidazole units and the corresponding homopolymers are prepared. The macromolecules are used as matrices for phosphorescent dopants to prepare PLEDs. The devices exhibit current efficiencies up to 38.5 cd A−1 at 100 cd m−2 and maximum luminances of 7400 cd m−2 at 10 V. Afterwards the most efficient monomers of this investigations were combined and statistical copolymers were synthesized. As hole-transporting monomer the carbazole substituted triarylamine and as electron-transporting monomer a disubstituted phenylbenzoimidazole was selected. This statistical copolymer was used in the following as matrix material for phosporescent PLEDs and the device performance was compared with a matrix system of a polymer blend matrix system of corresponding homopolymers. With this homopolymer blend efficiencies of about 30 cd A-1 at 10 V and luminances of 6800 cd m-2 beside a decreased onset voltage were realized. Finally bipolar blockcopolymers of structural basic monomers were synthesized via nitroxide mediated polymerization. With these technique and the chosen hole- and electron-transporting monomers a controlled radical polymerization was realized leading to blockcopolymers in different block lengths. These blockcopolymers were used as molecular doped matrix systems in green phosphoreszent PLEDs. The devices were compared in regard to their performances with PLEDs made of statistical copolymers and homopolymer blends. It was found that high molecular systems show a better device performance compared to low molecular polymer matrices. With atomic force microscopy it is shown that a phase separation takes place for the high molecular blend of homopolymers. For the synthesized blockcopolymers no phase separation could be verified, mainly because of the comparatively low molecular weight of these systems.

Abstract That greenhouse gas (GHG) emission causes ¡§Global Warming¡¨ is a human common problem today in the earth. The GHG emission will gradually promote our weather temperature and change which we must pay for a lot. For example, the warming temperature will dissolve icebergs, that it will elevate the sea level. Also, our land area will decrease. If climate zones were shifted, it would be possible to initiate some animals migrate. In the worse case, our living space will be squeezed and some special diseases will be spread out¡Ketc. In view of environmental protection awareness in every country, we must face the problem and crisis which comes from ¡§Global Warming¡¨ and ¡§Heating Pollution¡¨. In June of 1992, there was a meeting in Rio of Brazil. All representatives who comes from 153 different countries sign an agreement ¡V the United Nations Framework Convention on Climate Change (UNFCCC). They try to stabilize greenhouse gas concentrations at a level that would prevent dangerous interference with the climate and environmental system. To achieve this goal, the Kyoto Protocol was adopted on COP3 in December 1997 to place legally binding limits on GHG emissions. This Protocol norms 38 countries and European Union. In June 2007, the Group of Eight (G8) have reached a consensus and expect in year 2050, CO2 emissions can be reduced to the half of current emissions. We can see that, every country is vigorous to look for alternative energy that eliminates the environment destroyed and saves the earth resources. For example, Solar Energy, Water Energy, Wind Energy, Biomass Energy, Ocean Energy and Geothermal Energy¡Ketc. Those are gradually developed and applied in our daily life. My research is focus on the LED applications based on the substitution of traditional lighting. Actually, LED has all advantage of the energy saving, eco-lighting and economy of scale. How to use this alternative lighting is of great urgency and the major topic in light source manufacturers. For example, if America can replace their 55% white heat bulbs and 55% fluorescent lamps by LED before 2010, they can save 35 billion US dollars every year. For Japan, if they replace 100% white heat bulbs, they can save one to two of Nuclear Power Plants. Also, they can save above 100 million of gasoline every year. As to Taiwan official estimation, we can save 11 billion electricity degrees every year when we replace 25% white heat bulbs and 100% fluorescent lamps. That electric power is approximate to save one Nuclear Power Plant and 50 million of gasoline every year. According to the data above, the population of LED will give us a lot of eco-benefits. My report leans on researching and treating LED. Then, I take one step ahead to demonstrate how important it is to apply LED on our human light source and the effects of earth environment. Keywords: Greenhouse Gas (GHG) Global Warming United Nations Framework Convention on Climate Change (UNFCCC) Kyoto Protocol Biomass Energy LED - Light Emitting Diode (display)

An efficient Light Emitting Diode (LED) lamp driver circuit is proposed for retrofitting the conventionally used incandescent lamps with existing TRIAC dimmer. The dimming feature in a wide range of firing angle from 30¢X to 130¢X can be accomplished by means of double pulse-width modulation (DPWM) and analog current regulation. The LED lamp driver adopts a flyback converter with an auxiliary active power MOSFET for synchronous switch and an associated inductor for zero voltage switching (ZVS), leading to lower switching loss and thus achieving a higher circuit efficiency. In the thesis, the mode operation of the driver circuit is analyzed and the design equations are derived accordingly. A laboratory circuit is designed for an 50 W LED lamp which is composed of 45 high-brightness white LEDs in series. Experiments are carried out to test the circuit performances with two dimming schemes. The experimental results indicate that the driver can achieve a circuit efficiency of 95 % at the rated output. When the LED lamp is dimmed, the circuit efficiency with DPWM is higher than that with the analog current regulation. On the other hand, the LED lamp dimmed by analog current regulation has a higher efficiency but a less color shift by DPWM.

LEDs are being developed as the next generation lighting source due to their high efficiency and long life time, with a potential to save $15 billion per year in energy cost by 2020. State of the art LEDs are capable of emitting light at ~115 lm/W and have lifetime over 50,000 hours. It has already surpassed the efficiency of incandescent light sources, and is even comparable to that of fluorescent lamps. Since the total luminous flux generated by a single LED is considerably lower than other light sources, to be competitive the total light output must be increased with higher forward currents and packages of multiple LEDs. However, both of these solutions would increase the junction temperature, which degrades the performance of the LED--as the operating temperature goes up, the light intensity decreases, the lifetime is reduced, and the light color changes. The word "junction" refers to the p-n junction within the LED-chips. Critical to the temperature rise in high powered LED sources is the very large heat flux at the die level (100-500 W/cm2) which must be addressed in order to lower the operating temperature in the die. It is possible to address the spreading requirements of high powered LED die through the use of power electronic substrates for efficient heat dissipation, especially when the die are directly mounted to the power substrate in a chipon- board (COB) architecture. COB is a very attractive technology for packaging power LEDs which can lead improved price competiveness, package integration and thermal performance. In our work high power LED-chips (>1W/die) implementing COB architectures were designed and studied. Substrates for these packaging configurations include two types of power electronic substrates; insulated-metal-substrates (IMS) and direct-bonded-copper (DBC). To lower the operating temperature both the thermal impedance of the dielectric layer and the heat spreading in the copper circuit layers must be studied. In the analysis of our architectures, several lead free solders and thermal interface materials were considered. We start with the analysis of single-chip LED package and extend the result to the multi-chip arrays. The thermal resistance of the system is only a function of geometry and thermal conductivity if temperature-independent properties are used. Thus through finite element analysis (ANSYS) the effect of geometry and thermal conductivity on the thermal resistance was investigated. The drawback of finite element analysis is that many simulations must be conducted whenever the geometry or the thermal conductivity is changed. To bypass same of the computational load, a thermal resistance network was developed. We developed analytical expressions of the thermal resistance, especially focusing on the heat spreading effect at the substrate level. Finally, multi-chip LED arrays were analyzed through finite element analysis and an analytical analysis; where die-spacing is another important factor to determine the junction temperature. With this thermal analysis, critical design considerations were investigated in order to minimize device temperatures and thereby maximizing light output while also maximizing device reliability.

The objective of the research was to develop high quality GaN epitaxial growth on alternative substrates that could result in higher external quantum efficiency devices. Typical GaN growth on sapphire results in high defect materials, typically 10⁸⁻¹⁰cm⁻², due to a large difference in lattice mismatch and thermal expansion coefficient. Therefore, it is useful to study epitaxial growth on alternative substrates to sapphire such as ZnO which offers the possibility of lattice matched growth. High-quality metalorganic chemical vapor deposition (MOCVD) of GaN on ZnO substrate is hard to grow due to the thermal stability of ZnO, out-diffusion of Zn, and H₂back etching into the sample. Preliminary growths of GaN on bare ZnO substrates showed multiple cracks and peeling of the surface. A multi-buffer layer of LT-AlN/GaN was found to solve the cracking and peeling-off issues and demonstrated the first successful GaN growth on ZnO substrates. Good quality InGaN films were also grown showing indium compositions of 17-27% with no indium droplets or phase separation. ZnO was found to to sustain a higher strain state than sapphire, and thereby incorporating higher indium concentrations, as high as 43%, without phase separation, compared to the same growth on sapphire with only 32%. Si doping of InGaN layers, a known inducer for phase separation, did induce phase separation on sapphire growths, but not for growths on ZnO. This higher strain state for ZnO substrates was correlated to its perfect lattice match with InGaN at 18% indium concentration. Transmission electron microscopy results revealed reduction of threading dislocation and perfectly matched crystals at the GaN buffer/ZnO interface showing coherent growth of GaN on ZnO. However, Zn diffusion into the epilayer was an issue. Therefore, an atomic layer deposition of Al₂O₃was grown as a transition layer prior to GaN and InGaN growth by MOCVD. X-ray and PL showed distinct GaN peaks on Al₂O₃/ZnO layers demonstrating the first GaN films grown on Al₂O₃/ZnO. X-ray photoelectron spectroscopy showed a decrese in Zn diffusion into the epilayer, demonstrating that an ALD Al₂O₃layer was a promising transition layer for GaN growth on ZnO substrates by MOCVD.

Der externe Wirkungsquerschnitt von auf AlGaAs/InGaAlP basierenden Leuchtdioden (LEDs) ist auf Grund von Totalreflexion infolge des hohen Brechungsindex des Halbleitermaterials (n=3...4) beschränkt. Auf die Oberfläche der LED aufgebrachte metallische Nanoteilchen (MNT) können jedoch als Dipolstreuer genutzt werden, um so die Emission der LED zu vergrößern. In dieser Arbeit wurden zunächst einzelne Goldnanoteilchen verschiedener Größe auf einer solchen Leuchtdiode in zwei verschiedenen Der externe Wirkungsquerschnitt von auf AlGaAs/InGaAlP basierenden Leuchtdioden (LEDs) ist auf Grund von Totalreflexion infolge des hohen Brechungsindex des Halbleitermaterials (n=3...4) beschränkt. Auf die Oberfläche der LED aufgebrachte metallische Nanoteilchen (MNT) können jedoch als Dipolstreuer genutzt werden, um so die Emission der LED zu vergrößern. In dieser Arbeit wurden zunächst einzelne Goldnanoteilchen verschiedener Größe auf einer solchen Leuchtdiode in zwei verschiedenen Umgebungsmedien untersucht. Dabei zeigt sich eine deutliche Verstärkung der Emission, falls die Dipolresonanz des MNT bei kürzeren Wellenlängen im Vergleich zur LED-Emission liegt. Für den Fall, dass die Dipolresonanz mit der Emission überlappt oder bei größeren Wellenlängen liegt, kommt es zu einer Abschwächung. Numerische Berechnungen zeigen, dass dabei die Stärke der Quadrupolmode, welche zusätzliche Absorption hervorruft, sowie eine Rotverschiebung der Dipolresonanz bei Anregung oberhalb des kritischen Winkels der Totalreflexion eine entscheidende Rolle spielen. Mit Hilfe einer speziellen Maskentechnik, der Fischer-Pattern-Nanolithographie, können Arrays von MNT hergestellt und anschließend die MNT in Form und Größe manipuliert werden. Die zunächst dreieckige Form der Partikel führt zu einer Abschwächung der Emission, welche sich aber durch Umwandlung der MNT in Kugeln zu einer Emissionsverstärkung wendet. Dabei kann Licht, welches sonst im Substrat gefangen wäre, durch plasmonische Streuung ausgekoppelt werden. Eine Untersuchung ähnlicher Strukturen auf einem hochbrechenden, transparenten Substrat (GaP) zeigt, dass die Lage der plasmonischen Resonanzen stärker vom Abstand der Partikel abhängt, als gewöhnlich zu erwarten wäre. / The external quantum efficiency of light-emitting diodes (LEDs) based on AlGaAs/InGaAlP is limited by total internal reflection because of the high refractive index (typically between 3 and 4) of the semiconductor. Metal nanoparticles (MNP) deposited on the surface of the LED can be used as dipole scatterers in order to enhance the emission of the LED. In this thesis, first, single gold nanoparticles of various sizes deposited on such an LED were investigated. A clear enhancement is detected as long as the dipole plasmon resonance of the particle is at a shorter wavelength than the LED emission. If the plasmon resonance coincides with the LED emission or is at a larger wavelength, the enhancement turns into suppression. Numerical simulations indicate that this latter effect is mainly caused by the particle quadrupole resonance producing extra absorption. Arrays of MNPs can be produced by a special mask technique called \"Fischer pattern nanolithography\" and manipulated in shape and size by additional steps. Originally, the MNPs produced by this technique are triangular in shape and turn out to suppress the LED emission. After transformation of the particles to spheres, a clear enhancement was detected. Light that would otherwise remain trapped inside the substrate is coupled out by resonant plasmonic scattering. Investigations on analogous structures on a transparent high-index material (GaP) indicate a stronger coupling between the particles than expected on the basis of literature data.