Le regain d'attention des industriels pour les mémoires non volatiles intégrant des nanocristaux, illustré par l'introduction sur le marché de la Flexmemory de Freescale en technologie 90 nm, incite à poursuivre des études sur ce type de systèmes. Pour cela, nous avons mis au point des cellules mémoires élémentaires, à savoir des transistors MOS dont l'oxyde de grille contient une grille granulaire formée par un plan de nanocristaux de silicium (Si-ncx) stockant la charge électrique.Ce travail présente les principaux résultats issus de ces travaux, ceux-ci allant du procédé de fabrication à la caractérisation fine des dispositifs mémoires. Le parfait contrôle de l'élaboration de la grille granulaire de Si-ncx par implantation ionique à très basse énergie (ULE-IBS) est accompagné de caractéristiques « mémoires » répondant aux normes industrielles d'endurance et d'une discrimination des pièges responsables du chargement. Le stockage majoritaire par les Si-ncx est démontré, ce qui est essentiel pour la rétention de la charge. Nous avons développé une technique électrique permettant d'extraire à la fois la quantité de charge stockée par les Si-ncx mais également leurs principales caractéristiques structurales (taille, densité, position dans l'oxyde). Cette extension de la technique électrique de « pompage de charges », non destructive et in-situ permet de suivre l'état du composant en fonctionnement et de caractériser des pièges (e.g. les Si-ncx) pour la première fois au-delà de 3 nm de profondeur dans l'oxyde. Ces résultats ont été validés par des observations TEM. La résolution du pompage de charge étant le piège unique, nous avons alors couplé l'ULE-IBS avec la lithographie « Stencil » pour réduire latéralement le nombre de Si-ncx synthétisés. Cette technique nous permet pour le moment de contrôler la synthèse locale à la position désirée dans l'oxyde de « poches » de Si-ncx de 400 nm. La synthèse de « quelques » Si-ncx est envisagée à très court terme. Nous serons alors en mesure de fabriquer des mémoires à nombre choisi de nanocristaux (par SM-ULE-IBS), dont les propriétés structurales (taille, densité, position) et électriques (quantité de charge stockée) seront vérifiées par pompage de charge, offrant ainsi des outils puissants pour la fabrication et la caractérisation de mémoires à nombre réduit de nanocristaux, notamment pour des longueurs de grilles inférieures à 90 nm / The aim of this thesis has been to fabricate and electrically characterize elementary memory cells containing silicon nanocrystals (Si-ncs), in other words MOSFET which insulating layer (SiO2) contains a Si-ncs array storing the electrical charge. We have shown that we perfectly control the synthesis of a 2D array of 3-4 nm Si-ncs embedded into the MOSFET oxide by low-energy ion implantation (1-3 keV) Reaching this goal implied two key steps: on the one hand develop a reliable MOSFET fabrication process incorporating the Si-ncs synthesis steps and on the other hand develop tools and methods for both memory window and Si-ncs array itself characterizations. We have developed an in-situ characterization technique based on the well-known charge pumping technique, allowing for the first time the extraction of traps depth (e.g. the Si-ncs array) further than 3 nm into the oxide layer leading to the characterization of both position of these Si-ncs into the SiO2 matrix and their structural properties (diameter, density). These results have been confirmed by EF-TEM measurements. Finally, we have worked on the improvement of controlled local synthesis of Si-ncs pockets by combining low-energy ion implantation and stencil lithography. We reduced the size of these pockets down to about 400 nm using this parallel, low cost and reliable technique and identified the limiting effect for the pockets size reduction. These results pave the way for memory cells containing a few Si-ncs with a well-defined position into the oxide and a well-controlled number of ncs

Two images of British India persist in the modern imagination: first, an eighteenth-century world of incipient multiculturalism, of sexual adventure amidst the hazy smoke of hookah pipes; and second, the grandiose imperialism of the Victorian Raj, its vast public buildings and stiff upper lip. No art historian has focused on the intervening decades, however, or considered how the earlier period transitioned into the later. In contrast, Art in India's 'Age of Reform' sets out to develop a distinct historical identity for the decades between the Charter Act of 1813 and the 1858 Government of India Act, arguing that the art produced during this period was implicated in the political process by which the conquests of a trading venture were legislated and 'reformed' to become the colonial possessions of the British Nation. Over two parts, each comprised of two chapters, two overlooked media are connected to 'reforms' that have traditionally been understood as atrophying artistic production in the subcontinent. Part I relates amateur practice to the reform of the Company's civil establishment, using an extensive archive associated with the celebrated amateur Sir Charles D'Oyly (1781-1845) and an art society that he established called the Behar School of Athens (est.1824). It argues that rather than citing the Company's increasing bureaucratisation as the cause of a decline in fine art patronage, it is crucial instead to recognise how amateur practice shaped this bureaucracy's collective identity and ethos. Part II connects the production and consumption of illustrated print culture to the demographic shifts that occurred as a result of the repeal of the Company's monopolistic privileges in 1813 and 1833, focusing specifically on several costume albums published by artists such as John Gantz (1772-1853) and Colesworthy Grant (1813-1880). In doing so, it reveals how print culture provided cultural capital to a transnational middle class developing across the early-Victorian Empire of free trade. Throughout each chapter, the gradual undermining of the East India Company's sovereignty by a centralising British State is framed as a prerequisite to the emergence of the nation-state as the fundamental category of modern social and political organisation. Art in India's 'Age of Reform' therefore seeks not only to uncover the work and biographies of several unstudied artists in nineteenth-century India, but reveals the significance of this overlooked art history to both the development of the modern British State, and the consequent demise of alternative forms of political corporation.

Porté par les préoccupations actuelles en matière de sécurité et de qualité environnementale ainsi que par les efforts de recherche entrepris dans ce domaine, le marché mondial des capteurs de gaz est en pleine expansion. Dans le contexte de la commercialisation d'un capteur de gaz, une phase d'amélioration de ses performances, et notamment de sa sensibilité et de sa stabilité, est naturellement nécessaire. Cependant, il s'avère également pertinent d'envisager d'en diminuer le coût de fabrication. Pour cela, il convient de développer une technologie utilisant d'une part des matériaux bas coût et d'autre part permettant de réduire la consommation électrique du dispositif. Dans cette optique, ce travail de thèse a porté sur la réalisation et la caractérisation d'un capteur de gaz oxyde semi-conducteur entièrement basé sur le tungstène et le trioxyde de tungstène pour la détection d'hydrogène sulfuré en milieu industriel. Le principal onjectif était de fabriquer un capteur faible coût en utilisant des techniques d'élaboration simples et des matériaux peu onéreux. Pour cela, notre travail a consisté, dans un premier temps, à développer un élément chauffant en tungstène pouvant fonctionner jusqu'à 500°C. Les procédés mis au point pour la conception de l'élément chauffant ont été utilisés dans l'élaboration des électrodes permettant de mesurer la résistance électrique du film de trioxyde de tungstène. Ensuite, nous avons travaillé sur l'optimisation du procédé de pulvérisation cathodique radio fréquence pour l'élaboration de l'élément sensible en trioxyde de tungstène. Des essais sous gaz ont montré des résultats prometteurs pour la détection d'hydrogène, de dioxyde d'azote et d'ammoniac. / Driven by current safety and environmental quality concerns and research efforts in this area, the global market for gas sensors is expanding rapidly. In the context of the marketing of a gas sensor, a phase of improvement in its performance, and in particular its sensitivity and stability, is naturally necessary. However, it is also relevant to consider reducing the cost of manufacturing. To achieve this, it is necessary to develop a technology that uses low-cost materials and reduces the device's power consumption. In this perspective, this thesis work focused on the realization and characterization of a semiconductor oxide gas sensor entirely based on tungsten and tungsten trioxide for the detection of hydrogen sulfide in an industrial environment. The main objective was to manufacturate a low-cost sensor using simple processing techniques and low-cost materials. To achieve this, our work initially consisted in developing a tungsten heating element that can operate up to 500°C. The processes developed for the conception of the heating element were used in the development of the electrodes for measuring the electrical resistance of the tungsten trioxide film. Then, we worked on the optimization of the radio frequency sputtering process for the development of the tungsten trioxide sensing element. Gas measurements have shown promising results for the detection of hydrogen sulfide, nitrogen dioxide and ammonia.

Les copolymères à bloc (BCP) ont la propriété particulière de s’auto-assembler en structures périodiques. Ces macromolécules en association avec la photolithographie est un candidat prometteur à utiliser comme technique alternative pour les patterning avancé de très haute résolution. De cette façon, la réduction des circuits intégrés peut être maintenue. Les BCPs avec une forte incompatibilité chimique entre les deux blocs présentent une valeur élevée du paramètre d’interaction de Flory-Huggins χ. La théorie des BCPs prédit des caractéristiques périodiques de seulement quelques nanomètres avec des BCPs à haut valeur d’interaction.Cette thèse présente un dispositif expérimental en vue du développement d’une lithographie à BCPs de deuxième génération en utilisant le polystyrène-bloc polydiméthylsiloxane (PS-b-PDMS), contre le polystyrène-bloc-Polydi(méthyle méthacrylate) (PS-b-PMMA) à faible valeur de χ. Sur ce sujet, la cinétique d’auto-assemblage d’un PS-b-PDMS avec une valeur du paramètre de segregation χN élevée a été amélioré avec le mélange de plastifiants sélectifs au bloc PS. L’auto-assemblage sur des grandes surfaces a été alors prouvé par un recuit thermique rapide (~ 30 s). Comme une preuve de concept de la lithographie, certains masques PS-b-PDMS testés ont été transférés sur Si, où des caractéristiques allant jusqu’à 25 nm ont été atteintes.Le principe de la lithographie par BCP a également été utilisé pour montrer la structuration de matériaux 2D. Par exemple, le graphène présente un besoin réel de structuration en nanostructures très étroites afin d’ouvrir un gap entre la bande de valence et la bande conduction pour modifier ses propriétés électriques par confinement quantique.Un bas Le PS-b-PDMS a été utilisé pour patterner avec de tailles caractéristiques de 10 nm. Le BCP est déposé par centrifugation et recuit directement sur le graphène.L’auto-assemblage sur de grandes surfaces (1 cm²) est réalisé en quelques minutes et le masque est ensuite transféré vers le graphène par gravure plasma à base d’oxygène, où dans une seule étape la matrice PS est éliminé, les cylindres PDMS oxydés et le graphène gravé. De grandes surfaces de nanorubans de 11 nm de largeur (GNR) ont été fabriquées par la lithographie de l’auto-assemblage du PS-b-PDMS. Un nettoyage au plasma H2 a également été effectué afin d’éliminer les contaminants organiques apparaissant lors des étapes de fabrication. Des techniques différentes pour l’analyse du carbone telles que la spectroscopie photoélectronique de rayons X, la spectroscopie Raman et la microscopie à force atomique ont été utilisées pour montrer la haute qualité des GNR.La caractérisation électrique des GNRs tels que la mobilité et l’ouverture du gap dans le graphène ont également été mesurés pour confirmer le comportement électronique des nanorubans de graphène. Des valeurs de l’ordre de 150 cm²/V s et 30 meV ont été mesurées. L’ensemble de la procédure expérimentale a été réalisé dans le cadre des réglèmentations de salles blanches pour la microélectronique, puis les processus d’auto-assemblage des BCPs proposés sont évolutifs et peu coûteux et sont bien adaptés pour être intégrés aux techniques existantes de fabrication de semi-conducteurs. / The Block copolymers (BCPs) have the particular property of self-assemble into ordered periodical structures. These macromolecules in association with the classic photolithography, is a promising candidate to be used as an alternative technique for the advanced patterning. This way, the downsizing of the integrated circuits can be kept up. BCPs with high chemical incompatibility between their blocks exhibit a high value of the Flory-Huggins interaction parameter χ. The BCP theory predicts periodical features sizes with high-χ; BCPs of only few nanometers.The BCP lithography principe was also used to show the patterning of 2D materials. For exemple, graphene present a real needs of patterning into very narrow nanostructures to open up a bandgap to switch its electrical properties by quantum confinement. A low χN PS-b-PDMS was used to pattern ~ 10 nm features. BCP is spin-coated and annealed directly on graphene. Self-assembly on large surfaces (1 cm²) is achieved in few minutes and the mask is then transferred on graphene by oxygen-based plasma etching, where in a single step will eliminate the PS matrix, oxidized the PDMS cylinders and etch the graphene. Large surfaces of 11nm-width Graphen nanoribbons (GNRs) were fabricated by the self-assembly of PS-b-PDMS. Dry H2 plasma cleaning was also performed to remove organic contaminants appearing during the fabrication steps. Different analysis techniques of carbon such as Raman and X-ray photoelectron spectroscopy and atomic force microscopy were used to show the high chemical quality of the GNRs.Electrical characterization of the GNRs such as mobility and the bandgap openingin graphene were measured also to confirm the electronic behavior of the graphene nanoribbons. Values of the order of 150 cm²/V s and 30 meV were measured. The entire procedure was realized under microelectronics clean room requirement, then, the BCP self-assembly processes proposed are scalable and low cost, and is well-suited for integration with existing semiconductor fabrication techniques.The lithographical procedure developed in this investigation could also be generalized to fabricate different graphene nanostructures such as graphene nanomeshes or quantum dots that could be envisaged for other applications in functional devices. GNRs on large surfaces are expect to find a broad ranges of applications, in the fields of electrochemical and bioanalysis.

In the pursuit of economical and rapid fabrication solutions on the micro and nano scale, polymer replication has proven itself to be a formidable technique, which despite zealous development by the research community, remains full of promise. This thesis explores the potential of elastomers in what is a distinctly multidisciplinary field. The focus is on developing innovative fabrication solutions for planar photonic devices and for nanoscale devices in general. Innovations are derived from treatments of master structures, imprintable substrates and device applications. Major contributions made by this work include fully replicated planar integrated optical devices, nanoscale applications for photolithographic standing wave corrugations (SWC), and a biologically templated, optical fiber based, surface-enhanced Raman scattering (SERS) sensor. The planar devices take the form of dielectric rib waveguides which for the first time, have been integrated with long-period gratings by replication. The heretofore unemployed SWC is used to demonstrate two innovations. The first is a novel demonstration of elastomeric sidewall photolithographic mask, which exploits the capacity of elastomers to cast undercut structures. The second demonstrates that the corrugations themselves in the absence of elastomers, can be employed as shadow masks in a directional flux to produce vertical stacks of straight lines and circles of nanowires and nanoribbons. The thesis then closes by conceptually combining the preceding demonstrations of waveguides and nanostructures. An optical fiber endface is em ployed for the first time as a substrate for patterning by replication, wherein the pattern is a nanostructure derived from a biological template. This replicated nanostructure is used to impart a SERS capability to the optical fiber, demonstrating an ultra-sensitive, integrated photonic device realized at great economy of both time and money, with very real potential for mass fabrication.

Dans cette thèse, nous nous sommes attachés à mesurer la résistance induite par les parois magnétiques dans différents métaux ferromagnétiques (fer, cobalt, oxydes de manganèse, alliage de Fe0.5Pa0.5). Le premier circuit étudié consistait en un fil de 200 nanomètres de large et 50 nanomètres d'épaisseur, fabriqué par lithographie électronique. Par microscopie à force magnétique et microscopie de Lorentz nous avons observé que les domaines sont en position tête-bêche dans l'état vierge dans des fils de cobalt. La configuration magnétique a été suivie en fonction du champ appliqué. Par lithographie électronique, nous avons pu disposer sur le fil des contacts en or. Dans le cobalt, la résistance d'une paroi magnétique unique a été mesurée et sa valeur est supérieure aux prédictions théoriques. Dans le manganite, sur un circuit équivalent, nous avons pu mesurer la magnétorésistance de joints de grain. Nous avons aussi effectué la mesure de la résistance d'une paroi sur une couche à aimantation perpendiculaire (alliage de fer-palladium), dont les domaines étaient alignés. Nous avons mesuré la résistance perpendiculairement (MR=9%) et parallèlement (MR=2.8%) aux parois, et ainsi corroboré certains modèles. Nous avons, par ailleurs, étudié (expérimentalement et numériquement) des systèmes magnétiques dans lesquels l'anisotropie de forme joue un rôle prépondérant. Dans des plots triangulaires de taille variant entre 0.1 et 2 microns, la frustration géométrique stabilise des états de vortex. Dans des lignes de fer-palladium, nous avons montré que les dimensions des domaines étaient conservées lorsque la taille latérale du système était réduite jusqu'à 300 nanomètres En revanche, l'orientation des domaines devient anisotrope et les parois magnétiques s'orientent perpendiculairement à l'axe de la ligne. Ces études permettent de mieux comprendre les effets de l'anisotropie de forme.

The development of new materials with novel properties plays an important role in improving our lives and welfare. Research in Nanotechnology can provide e.g. cheaper and smarter materials in applications such as energy storage and sensors. In order for this development to proceed, we need to be able to characterize the material properties at the nano-, and even the atomic scale. The ultimate goal is to be able to tailor them according to our needs. One of the great challenges concerning the characterization of nano-sized objects is how to achieve the physical contact to them. This thesis is focused on the contacting of nanoobjects with the aim of electrically characterizing them and subsequently understanding their electrical properties. The analyzed nanoobjects are carbon nanosheets, nanotetrapods, nanoparticles and molecular systems. Two contacting strategies were employed in this thesis. The first strategy involved the development of a focused ion beam (FIB) based nanocontact platform. The platform consists of gold nanoelectrodes, having nanogaps of 10-30 nm, on top of an insulating substrate. Gold nanoparticles, double-stranded DNA and cadmium telluride nanotetrapods have been trapped in the gaps by using dielectrophoresis. In certain studies, the gold electrodes have also been coated with conducting or non-conducting molecules, prior to the trapping of gold nanoparticles, in order to form molecular junctions. These junctions were subsequently electrically characterized to evaluate the conduction properties of these molecular systems. For the purpose of better controlling the attachment of molecules to the nanoelectrodes, a novel route to synthesize alkanedithiol coated gold nanoparticles was developed. The second contacting strategy was based on the versatility of the FIB instrument as a platform for in-situ manipulation and electrical characterization of non-functionalized and functionalized carbon nanosheets, where it was found that the functionalized samples had an increased conductivity by more than one order of magnitude. Both contacting strategies proved to be valuable for building knowledge around contacting and electrical characterization of nanoobjects

Materials based on novel Off-Stoichiometry Thiol-Ene polymers, abbreviated OSTE, show promising properties as materials forlow cost and scalable manufacturing of micro- and nanosystems such as lab-on-chip devices. The OSTE materials have tunablemechanical properties, offer possibility for low temperature bonding to many surfaces via tunable surface chemistry, and can beused in soft lithography. Unlike the commonly used elastomer poly(dimethylsiloxane), PDMS, the OSTE materials have lowpermeability for gasses, are resistant to common solvents and can be more permanently surface modified.In this master’s thesis project, the OSTE materials have been evaluated with focus on compatibility with cells, possibility fornanostructuring using soft lithography and the use of OSTE as a flexible support for conducting polymers.Results from cell seeding studies with HEP G2 cells suggest that cells can proliferate on a low thiol off-stoichiometry OSTEmaterial for at least five days. The biocompatibility for this type of OSTE material may be similar to poly(styrene). However, highlevels of free thiol monomers in the material decrease cell viability considerably.By using soft lithography techniques it is possible to fabricate OSTE nanochannels with at least the dimensions of 400 nm x 15nm. Combined with the advantages of using the OSTE materials, such as low temperature bonding and possibility for stablesurface modifications, a candidate construction material for future development of systems for DNA analysis is at hand.OSTE can serve as a flexible support for an adsorbed film of a conducting polymer with the possibility for future applicationssuch as electronic interfaces in microsystems. In this project, a film of PEDOT:PSS with the electrical resistance of ~5 kΩ wascreated by adsorption to an flexible OSTE material. Furthermore, results suggest that it is possible to further optimize theconductivity and water resistance of PEDOT:PSS films on OSTE.

Spintronics, an abbreviation of spin based electronics and also known as magneto electronics, has attracted a lot of interest in recent years. It aims to explore the role of electrons’ spins in building next generation electric devices. Using electrons’ spins rather than electrons’ charges may allow faster, lower energy cost devices. Spin Hall Effect is an important subfield of spintronics. It studies spin current, spin transport, and spin accumulation in paramagnetic systems. It can further understanding of quantum physics, device physics, and may also provide insights for spin injection, spin detection and spin manipulation in the design of the next generation spintronics devices. In this experimental work, two sets of experiments were prepared to detect the Spin Hall Effect in metallic systems. The first set of experiments aims to extract Spin Hall Effect from Double Hall Effect in micrometer size metal thin film patterns. Our experiments proved that the Spin Hall Effect signal was much smaller than the theoretically calculated value due to higher electrical resistivity in evaporated thin films. The second set of experiments employs a multi-step process. It combines micro fabrication and electrochemical method to fabricate a perpendicular ferromagnet rod as a spin injector. Process description and various techniques to improve the measurement sensitivity are presented. Measurement results in aluminum, gold and copper are presented in Chapters III, IV and V. Some new experiments are suggested in Chapters V and VI.

In this study the relationship between the dynamic response of the flexible substrate and the power generation for energy harvesting system is proposed. High electro-mechanical transformation of piezoelectric materials, high efficient energy transfer of mechanical structure and controlled circuit make the piezoelectric generator a high performance. The devices of cantilevers with lump structures on the flexible substrate and piezoelectric film (ZnO) are designed. Then some individual layers of power generator are stocked in parallel to form a multi-layer system with a broad resonant band width. When the generator is operated in a wide frequency range vibration environment, the multi-layer piezoelectric films in the form of cantilever structures can induce current. First the finite element method for the piezoelectric cantilever beam is constructed by using ANSYS software. Both modal analysis and harmonic response analysis are performed to obtain the structural modal parameters and frequency response functions, respectively. Besides, the beam structure is modeled by 3D coupled field piezoelectric element. This research will apply Taguchi¡¦s method to design including variations of dimensions and material properties for energy harvesting system. The flexible substrate is polymeric film (PET). Imprinting process is applied to transfer the simulated geometric configuration onto a flexible substrate to obtain a maximum power output. The results show the single devices can improve efficiently by using lump structures on the flexible substrate, the generator could achieve maximum OCV of 2.25V which is 0.276£gW every centimeter squared when attached to a stable source of vibration. The multi-layer system can be used in 50~500Hz of low frequency environment. Furthermore, the output voltage (OCV) is upward when the flexible substrate with low Young¡¦s modulus.