The aim of this diploma thesis is to continue in prototype realization and a final proposition of three-phase frequency transformer pilot projected in scope of my bachelor work. This transformer is outlined for a small unsynchronized engine to 100 watt output and is designed to supply the fan motor. This suggestion was optimalized from the standpoint of bargain low price and technical feasibility. Powerful part of transformer is solved with help of circuit FSB50450 which is fed from compact source MYRRA 47155. Steering system is guaranteed with circuit MC3PHAC. This device is possible to use in less demanding applications where it was resisted by high expensive price of common frequency transformers.

Here we propose a completely new covalent heterostructure based on graphene and self-decorated MoS₂ monolayers. Detailed investigation of the decoration process of the MoS₂ surface by Mo adatoms was performed using first principles DFT methods. Comparison between valence-only and semicore pseudopotentials was performed to correctly describe the interaction between Mo adatoms and the MoS₂ surface. It was found that self-decoration by Mo atoms is favorable from an energetic point of view. We studied in detail various decoration paths of Mo atoms on the MoS₂ surface. The strong variation of electronic properties after the decoration of MoS₂ was found. The impact of the presence of Mo adatoms on the electronic properties of the graphene/MoS₂ heterostructure was shown.

Detta är en undersökning av en symbolisk tolkning av oxen och åsnan i kristna födelseikoner (och andra framställningar). Denna symboliska tradition har ett ytterst begränsat vetenskapligt belägg i samtiden och utgår särskilt från kyrkofädernas tolkningar. Denna undersökning bidrar med en insikt i en levande ikonografisk praxis där symboliken i djuren visar sig spela en roll för att reflektera en särskild teologi. Materialet består av ett antal föreläsningar av den kanadensiske ortodoxa ikonmålaren Jonathan Pageau. Undersökningen bygger på de religionsvetenskapliga begreppen religiöst seende och religiös visuell kultur som grundar sig i en forskningstradition som Marie Fahlén redogör för. De bägge begreppen kompletterar varandra genom att de skapar en dualitet i förståelsen för religiös konst genom att knyta samman tolkningen och hermeneutiken framför bilden med kontexten och teologin bakom bilden. Materialet analyseras med en ideologianalys som strukturerar materialet i två analysmodeller som syftar till att spegla de teoretiska begreppens dualitet; idealtyper och dimensioner. Pageaus religiösa seende struktureras i idealtyper för oxe och åsna baserat på vad djuren associeras med i materialet. Den visuella kultur som Pageau uttrycker i materialet beskrivs i relation till de religionsvetenskapliga dimensionerna rättfärdiggörelse och frälsningslära som också är tänkta att följa dualiteten i de teoretiska begreppen; synen på andra och synen på den egna läran. Baserat på denna beskrivning kategoriseras Pageaus tolkning till den av Paul Knitters fyra religionsteologiska modeller han mest relaterar till. Undersökningen visar att oxen och åsnan är ett inslag i födelseikonen som för Pageau stärker tolkningen av inkarnationen som inte bara ett möte mellan himmel och jord, utan också en världslig försoning, ett ”coming together”. Oxen som sinnebilden av ett rent djur förknippar han bland annat med enhet och kategorisering, universalitet och principer. Åsnan som sinnebilden av ett orent djur förknippar han bland annat med förening och sammanblandning, partikularitet och förändring. Snarare än en historisk händelse menar han att det symboliserar en ontologisk ordning eller en ”evig händelse” som finns i allt. Analysen visar att Pageaus syn på rättfärdiggörelse och hans frälsningslära karaktäriseras av en balans mellan det universella och partikulära i synen på Guds kärlek. Undersökningen visar att Pageaus tolkning kan kategoriseras under uppfyllelseteologi.

In dieser Arbeit werden Speichertransistoren mit Oxid-Nitrid-Oxid-Speicherschicht und lokaler Ladungsspeicherung untersucht, die zur nichtflüchtigen Speicherung von Informationen genutzt werden. Charakteristisch für diese Transistoren ist, dass an beiden Enden des Transistorkanals innerhalb der Isolationsschicht Informationen in Form von Ladungspaketen unabhängig und getrennt voneinander gespeichert werden. Für das Auslesen, Programmieren und Löschen der Speichertransistoren werden die physikalischen Hintergründe diskutiert und grundlegende Algorithmen zur Implementierung dieser Operationen auf einer typischen Speicherfeldarchitektur aufgezeigt. Für Standard-MOS-Transistoren wird ein Kurzkanal-Schwellspannungsmodell abgeleitet und analytisch gelöst. Anhand dieser Modellgleichung werden die bekannten Kurzkanaleffekte betrachtet. Weiterhin wird ein Modell zur Berechnung des Drainstroms von Kurzkanaltransistoren im Subthreshold-Arbeitsbereich abgeleitet und gezeigt, dass sich die Drain-Source-Leckströme bei Kurzkanaltransistoren vergrößern. Die Erweiterung des Schwellspannungsmodells für Standard-MOS-Transistoren auf den Fall der lokalen Ladungsspeicherung innerhalb der Isolationsschicht erlaubt die Ableitung eines Schwellspannungsmodells für Oxid-Nitrid-Oxid-Transistoren mit lokaler Ladungsspeicherung. Dieses Modell gestattet die qualitative und quantitative Diskussion der Erhöhung der Schwellspannung durch die lokale Injektion von Ladungsträgern beim Programmiervorgang. Weiterhin ist es mit diesem Modell möglich, die Trennung der an beiden Kanalenden des Transistors gespeicherten Informationen beim Auslesevorgang qualitativ zu erklären und diese Bittrennung in Abhängigkeit von der Drainspannung zu berechnen. Für Langkanalspeichertransistoren wird eine analytische Näherungslösung des Schwellspannungsmodells angegeben, während das Kurzkanalverhalten durch die numerische Lösung der Modellgleichung bestimmt werden kann. Für Langkanalspeichertransistoren wird ein Subthreshold-Modell zur Berechnung des Drainstroms abgeleitet. Dieses Modell zeigt, dass sich die Leckströme von programmierten Speichertransistoren im Vergleich zu Standard-MOS-Transistoren gleicher Schwellspannung vergrößern. Die Ursache dieses Effekts, die Verringerung der Subthreshold-Steigung von Transistoren im programmierten Zustand, wird analysiert. Für einige praktische Beispiele wird die Anwendung der hergeleiteten Modellgleichungen beim Entwurf von Flash-Speichern demonstriert. / In this work, memory transistors with an oxide-nitride-oxide trapping-layer and local charge storage, which are used for non-volatile information storage, are examined. Characteristic for these transistors is an independent and separated storage of information by charge packages, located at both sides of the transistor channel, in the insulation layer. The physical backgrounds for reading, programming and erasing the memory transistors are discussed, and basic algorithms are shown for implementing these operations on a typical memory array architecture. For standard MOS-transistors a short channel threshold model is derived and solved analytically. By using these model equations, the known short channel effects are considered. Further, a model for calculating the drain current of short channel transistors in the subthreshold operation region is derived. This model is used to show the increase of drain-source leakage currents in short channel transistors. By extending the standard MOS-transistor threshold voltage model for local charge storage in the insulation layers, the derivation of a threshold voltage model for oxide-nitride-oxide transistors with local charge storage is enabled. This model permits the quantitative and qualitative discussion of the increase in threshold voltage caused by local injection of charges during programming. Furthermore, with this model, the separation of the information, which are stored at both sides of the transistor channel, in the read-out operation is explained qualitatively, and the bit separation is calculated dependent on the drain voltage. For long channel memory transistors an analytical approximation of the threshold voltage model is given, whereas the short channel behaviour can be determined by solving the model equation numerically. For long channel memory transistors, a subthreshold model for calculating the drain current is derived. This model shows the increase in leakage current of programmed memory transistors in comparision to standard MOS-transistors. The root cause of this effect, the reduced subthreshold swing of transistors in the programmed state, is analysed. The application of the derived model equations for the development of flash memories is demonstrated with some practical examples.

Silicon is the main material used in electronics. The evolution of power electronics and the need for more power efficient semiconductor devices led silicon to its limits. Silicon carbide is a promising material for electronic applications with a wide band-gap, high critical electric field, high thermal conductivity and saturation velocity. Except from its superiority to silicon, silicon carbide comes with a drawback of about two orders of magnitude more interface traps in the SiC/SiO2 interface compared with silicon. A result of this drawback is a flat-band voltage shift when applying a stress to the gate of MOS capacitors and power MOSFETs. In order to study the pure characteristics of the SiC/SiO2 interface, two stress methods, a current pulse stress and gate voltage upsweep, have been applied on 4H-SiC capacitors with nitrided thermal oxides at room temperature and at higher temperatures. The flat-band voltage recovery was examined. The flat-band voltage could be restored at room temperature with a gate voltage downsweep while a restoration is not needed at higher temperatures. The maximum voltage (initial voltage) and the voltage rate of the downsweep were investigated and higher initial voltages and lower voltage rates showed to lead to better VFB restoration. A 200 millisecond long current pulse stress was implemented and it had almost similar effects as the voltage upsweep which lasts 50 seconds. / Kisel är det viktigaste materialet som används i elektronik. Utvecklingen av kraftelektronik och behovet av mer energieffektiva halvledarkomponenter ledde kisel till sina gränser. Kiselkarbid är ett lovande material för elektroniska applikationer med ett brett bandgap, högt kritiskt elektriskt fält, hög värmeledningsförmåga och hög mättningshastighet. Förutom dess överlägsenhet gentemot kisel, kommer kiselkarbid med en nackdel med cirka två storleksordningar fler gränssnittsfällor i SiC / SiO2-gränssnittet jämfört med kisel. Ett resultat av denna nackdel är en förskjutning av flatbands-spänningen, VFB, när man applicerar en spänning på gaten till MOS-kondensatorer och kraft- MOSFETar. För att studera de rena egenskaperna hos SiC/SiO2-gränssnittet har två spänningsmetoder, en strömpulsstress och ett uppåtriktat gate-spänningssvep, applicerats på 4H-SiC- kondensatorer med nitriderade termiska oxider vid rumstemperatur och vid högre temperaturer. Återställning av VFB undersöktes. VFB kan återställas vid rumstemperatur med ett nedåtriktat gate-spänningssvep medan en återställning inte behövs vid högre temperaturer. Den maximala spänningen (initialspänningem) och svephastigheten för det nedåtriktade svepet undersöktes och högre initialspänningar och lägre svephastigheter visade sig leda till bättre VFB-återställning. En 200 millisekund lång strömpuls-stress implementerades och den hade nästan samma effekter som ett uppåtriktat spänningssvep

Actuellement, plusieurs types de photodétecteurs sont disponibles sur le marché. Leurs performances se caractérisent notamment par la réponse spectrale, le courant d'obscurité, le rapport signal sur bruit, le rendement quantique et le temps de réponse. L'émergence de nouvelles applications nécessite des photodétecteurs de plus en plus sensibles, afin de pouvoir détecter de très faibles niveaux de radiation, voire de pouvoir compter des photons un par un. Ce travail de thèse s'intéresse aux moyens de réalisation de nanopixels pour la détection de faibles niveaux de lumière visible, en utilisant l'absorption dans des nanocristaux de silicium. Après avoir discuté de l'influence de la réduction des dimensions sur les propriétés électroniques et optiques du silicium, ainsi que de l'utilisation du blocage de Coulomb pour la photodétection, nous présentons un procédé de fabrication et d'isolation de nanopiliers contenant des nanocristaux de silicium dans une matrice d'oxyde de silicium. Les caractéristiques électriques des nanopixels intégrant ces nanocristaux ont permis de mettre en évidence les phénomènes de piégeage de charges dans les îlots, ainsi que leur contribution aux mécanismes de transport. Nous présentons finalement une première étude des propriétés électro-optiques des nanopixels qui ont été caractérisés par des mesures de photocourant.

Streaming of on-line gaming video is a challenging problem because of the enormous amounts of video data that need to be sent during game playing, especially within the limitations of uplink capabilities. The encoding complexity is also a challenge because of the time delay while on-line gamers are communicating. The main goal of this research study is to propose an enhanced on-line game video streaming system. First, the most common video coding techniques have been evaluated. The evaluation study considers objective and subjective metrics. Three widespread video coding techniques are selected and evaluated in the study; H.264, MPEG-4 Visual and VP- 8. Diverse types of video sequences were used with different frame rates and resolutions. The effects of changing frame rate and resolution on compression efficiency and viewers' satisfaction are also presented. Results showed that the compression process and perceptual satisfaction are severely affected by the nature of the compressed sequence. As a result, H.264 showed higher compression efficiency for synthetic sequences and outperformed other codecs in the subjective evaluation tests. Second, a fast inter prediction technique to speed up the encoding process of H.264 has been devised. The on-line game streaming service is a real time application, thus, compression complexity significantly affects the whole process of on-line streaming. H.264 has been recommended for synthetic video coding by our results gained in codecs comparative studies. However, it still suffers from high encoding complexity; thus a low complexity coding algorithm is presented as fast inter coding model with reference management technique. The proposed algorithm was compared to a state of the art method, the results showing better achievement in time and bit rate reduction with negligible loss of fidelity. Third, recommendations on tradeoff between frame rates and resolution within given uplink capabilities are provided for H.264 video coding. The recommended tradeoffs are offered as a result of extensive experiments using Double Stimulus Impairment Scale (DSIS) subjective evaluation metric. Experiments showed that viewers' satisfaction is profoundly affected by varying frame rates and resolutions. In addition, increasing frame rate or frame resolution does not always guarantee improved increments of perceptual quality. As a result, tradeoffs are recommended to compromise between frame rate and resolution within a given bit rate to guarantee the highest user satisfaction. For system completeness and to facilitate the implementation of the proposed techniques, an efficient game video streaming management system is proposed. Compared to existing on-line live video service systems for games, the proposed system provides improved coding efficiency, complexity reduction and better user satisfaction.

No description available.

L’objectif de cette thèse est d’étudier les apports et les limitations des dispositifs double grille à grilles indépendantes (IDGMOS) dans la conception de circuits analogiques fonctionnant à basses fréquences. Ce dispositif compte parmi les structures à l’étude pour le remplacement des transistors MOS à substrat massif. Ce remplacement deviendra nécessaire dès lors que ceux-ci auront atteint leurs limites physiques suite à la diminution géométrique dictée par les besoins de l’industrie du semiconducteur. Bien que cette technologie soit conçue pour ses potentialités quant à la réalisation de circuits numériques et RF, le fait de pouvoir déconnecter les deux grilles et de les contrôler séparément ouvre également la voie à de nouvelles solutions pour la conception des systèmes analogiques futurs. Ce travail se focalise tout d’abord sur l’étude du comportement de l’IDGMOS et notamment sur les effets du couplage existant entre les deux interfaces du composant. Cette étude s’appuie sur les caractéristiques du transistor ainsi que sur son modèle. Celui-ci est ensuite simplifié afin d’extraire des lois élémentaires régissant le fonctionnement dynamique de l’IDGMOS. Dans un second temps, ce manuscrit précise l’environnement futur du transistor ainsi que les solutions existantes, conçues à base de dispositifs à substrat massif et permettant de palier les détériorations fonctionnelles futures. Une brève étude comparative est présentée ensuite entre une technologie MOS standard avancée et un modèle IDGMOS ajusté sur les prévisions de l’ITRS. Néanmoins, les paramètres ajustés sont à ce point idéaux qu’il est difficile de conclure. Il reste donc préférable de se cantonner aux considérations analogiques données par la suite du chapitre, celles-ci se basant principalement sur les équations du modèle de l’IDGMOS ainsi que sur sa structure. La troisième partie de se chapitre met en œuvre le transistor IDGMOS au sein de circuits représentant les blocs de base de l’électronique analogique. Chacun de ces blocs est étudié afin de mettre en valeur un apport fonctionnel particulier du composant. Cette étude se termine par une comparaison entre les résultats simulés d’un amplificateur complet IDGMOS et ceux d’un autre circuit réalisé quant à lui en utilisant l’accès substrat de transistors MOS standard, tous deux fonctionnant sous une tension d’alimentation de 0; 5V. / The aim of this thesis is to study the contributions and the limitations of Independently Driven Double Gate MOS transistors in regard of the low frequency analog design. This device is one of the candidates for the replacement of the current bulk MOS technology since the gate length of the transistors cannot be efficiently decreased under 30nm. Even if the IDGMOS technology is mainly designed for digital and radio frequency applications, the independent drive of the gates should also improve the design of analog circuits ant it would provide solutions to the future circuits issues. First, this work focuses upon the IDGMOS’s behaviour, going a little deeper into the effects of the coupling that exists between its interfaces. Using the electrical characteristics of the transistor and simplifying its model, this report then reviews the static and dynamic laws of the component in order to extract a simple description of its operation modes. Secondly, a state of the art concerning both the future environment and issues is presented, followed by the solutions which currently exist using the standard MOS technology. A brief comparison between an advanced MOS technology and an IDGMOS model fitted on the ITRS parameters is given. However, these ideal parameters prevent this work from establishing a practical conclusion whereas the aforementioned theoretical studies can be used for providing a better understanding of the IDGMOS contributions. Those are reviewed just before the last part of the report which presents some basic analog circuits and their enhancement using double gate transistors. This chapter first emphasizes each important aspect of the device operating within the circuits and it thus concludes on an interesting comparison between two complete low supply voltage amplifiers, the first one designed using IDGMOS transistors and the other one based on bulk driven MOS devices.

Orientador: Jose Alexandre Diniz / Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e Computação / Made available in DSpace on 2018-09-11T21:11:59Z (GMT). No. of bitstreams: 1 Miyoshi_Juliana_M.pdf: 3791020 bytes, checksum: 460cf8c5054332b38c548b87723e8179 (MD5) Previous issue date: 2008 / Resumo: Filmes isolantes com alta constante dielétrica (high k) para a próxima geração (tecnologia CMOS de 32 nm), tais como óxido de titânio (TiOx), oxinitreto de titânio (TiOxNy), oxinitreto de titânio alumínio (AlxTiwOyNz), nitreto de titânio alumínio (AlxTiwNz) e óxido de titânio alumínio (AlxTiwOy) foram obtidos por evaporação por feixe de elétrons de Ti ou TiAl, com adicional nitretação ou oxinitretação ou oxidação por plasma ECR (Electron Cyclotron Resonance) em substratos de Si. Os filmes foram caracterizados por elipsometria (espessura), espectroscopia de emissão do infravermelho (FTIR) (ligações químicas) e microscopia de força atômica (AFM) (rugosidade da superfície). Os plasmas ECR foram caracterizados por espectroscopia por emissão óptica (OES). Estes filmes foram usados como isolantes de porta em capacitores MOS, que foram fabricados com eletrodos de Al e TiAl. Estes capacitores foram utilizados para a obtenção das medidas de capacitância - tensão (C-V) e corrente - tensão (I-V). Um valor relativo para a constante dielétrica de 3,9 foi adotado para extrair o valor de EOT dos filmes, a partir das medidas C-V sob região de forte acumulação, resultando em valores entre 1,1 nm e 1,5 nm, e densidades de carga efetiva em torno de 1012 cm-2. Das medidas I-V, foram extraídas valores de correntes de fuga através do dielétrico de porta entre 0,02 mA e 20 mA. Os melhores resultados (com correntes de fuga menores que 4 mA e EOT menores que 1,5 nm) foram obtidos pelas estruturas MOS com dielétrico de porta de AlxTiwOy e AlxTiwOyNz. Devido a estes resultados, nMOSFETs com eletrodo de Al e dielétrico de porta de AlxTiwOyNz foram fabricados e caracterizados por curvas características I-V. Foram obtidas características elétricas do nMOSFET, tais como transcondutância de 380 µS e slope de 360 mV/dec. Estes resultados indicam que os filmes AlxTiwOy e AlxTiwOyNz são adequados para a próxima geração de dispositivos (MOS). / Abstract: High k insulators for the next generation (sub-32 nm CMOS (complementary metaloxide-semiconductor) technology), such as titanium oxide (TiOx), titanium oxynitride (TiOxNy), titanium-aluminum oxynitride (AlxTiwOyNz), titanium-aluminum nitride (AlxTiwNz) and titanium-aluminum oxide (AlxTiwOy), have been obtained by Ti or Ti/Al e-beam evaporation, with additional electron cyclotron resonance (ECR) plasma nitridation or oxynitridation or oxidation on Si substrates. The films were characterized by ellipsometry (thickness), Fourier Transformed Infra Red (FTIR) (chemical bonds) and Atomic Force Microscopy (AFM) (surface roughness). The ECR plasmas were characterized by optical emission spectroscopy (OES). These films have been used as gate insulators in MOS capacitors, which were fabricated with Al or TiAl gate electrodes. These capacitors were used to obtain capacitance-voltage (C-V) and current-voltage (I-V) measurements. A relative dielectric constant of 3.9 was adopted to extract the Equivalent Oxide Thickness (EOT) of films from C-V curves under strong accumulation condition, resulting in values between 1.1 and 1.5 nm, and the effective charge densities of about 1012 cm-2. From I-V measurements, gate leakage currents through these gate dielectrics between 0,02 mA and 20 mA were extracted. The best results (leakage current lower than 4 mA and EOT thinner than 1.5 nm) were obtained by MOS structures with gate dielectrics of AlxTiwOy and AlxTiwOyNz. Because of these results, nMOSFETs with Al gate electrode and AlxTiwOyNz gate dielectric were fabricated and characterized by I-V characteristic curves. nMOSFET electrical characteristics, such as transconductance of 380 µS and sub-threshold slope of 360 mV/dec, were obtained. These results indicate that the obtained AlxTiwOyNz and AlxTiwOy films are suitable gate insulators for the next generation (MOS) devices. / Mestrado / Eletrônica, Microeletrônica e Optoeletrônica / Mestre em Engenharia Elétrica