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[en] STUDY OF THE ALIGNMENT DYNAMICS OF GOLD NANORODS UNDER THE INFLUENCE OF AN EXTERNAL ELECTRICAL FIELD / [pt] ESTUDO DA DINÂMICA DE ALINHAMENTO DE NANOBASTÕES DE OURO SOB EFEITO DE UM CAMPO ELÉTRICO EXTERNOLEONARDO DE FARIAS ARAUJO 09 January 2019 (has links)
[pt] Cristais líquidos são amplamente utilizados atualmente em telas e filtros. Contudo, o alinhamento dos cristais líquidos possui uma resposta relativamente lenta (da ordem de milissegundos) devido à necessidade da interação entre vizinhos próximos. Em contrapartida, nanobastões de ouro são capazes de alinhar-se a um campo elétrico, mesmo quando isolados, devido à sua susceptibilidade elétrica elevada comparada a dos cristais líquidos, apresentando uma resposta de alinhamento significativamente mais rápida que a dos cristais líquidos. A forma alongada dos nanobastões faz com que sua absorção e seu espalhamento de luz, ocasionados pelo efeito de Ressonância de Plasmon de Superfície Localizado (Localized Surface Plasmon Resonance – LSPR), sejam altamente dependentes da orientação relativa dos nanobastões à polarização da luz incidente. Por isso, suspensões de nanobastões têm se tornado um novo paradigma em controle de luz por alinhamento induzido por campo elétrico. Neste trabalho, é apresentado um estudo da dinâmica de alinhamento dos nanobastões, por meio de medidas de transmissão de luz por um componente que permite a interação da luz com a suspensão de nanobastões enquanto sob influência de um campo elétrico de alinhamento. Foi encontrado um tempo de resposta de 1,5 microssegundos, 3 ordens de grandeza mais rápido que o de cristais líquidos comuns. Um segundo experimento foi realizado com um componente com dois pares de eletrodos transversais, no qual foi possível eliminar a relaxação lenta do sistema, demonstrando assim um chaveamento óptico digital com tempo de resposta da ordem de 110 Newton vezes segundo. Dois modelos teóricos foram propostos para descrever a dinâmica de alinhamento dos nanobastões e foi demonstrado que ambos os modelos ajustam bem os dados experimentais. Apresentamos também uma relação de equivalência entre os dois modelos. / [en] Liquid crystals are widely used nowadays in displays and optical filters. However, the alignment of liquid crystals has a relatively slow switching response (of the order of milliseconds) due to the near-neighbor interaction. In contrast, the high electrical susceptibility of a single gold nanorod enables its alignment to an external electric field, presenting a significantly faster switching response than that of liquid crystals. The elongated form of the nanorods makes their absorption and scattering, caused by the Localized Surface Plasmon Resonance (LSPR) effect, to be highly dependent on their orientation relative to the light polarization. Therefore, gold nanorod suspensions have become a new paradigm in light control by electric field-induced alignment. In this work, a study of the alignment dynamics of nanorods is presented, by means of light transmission measurements by a component that allows the interaction of light with the suspension of nanorods while under the influence of an electric field of alignment. An alignment time of 1.5 microseconds was found, which is 3 orders of magnitude smaller than traditional liquid crystal alignment mechanism response time. A second experiment was carried out with a component with two pairs of transverse electrodes, in which it was possible to eliminate the slow relaxation of the system, thus demonstrating a digital optical switch with response of the order of 110 Newton second. Two theoretical models were proposed to describe the alignment dynamics of the nanorods and it was demonstrated that both models fit well the experimental data. An equivalence relation between the two models is presented.
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Optimal Mechanisms for Selling Two Heterogeneous ItemsThirumulanathan, D January 2017 (has links) (PDF)
We consider the problem of designing revenue-optimal mechanisms for selling two heterogeneous items to a single buyer. Designing a revenue-optimal mechanism for selling a single item is simple: Set a threshold price based on the distribution, and sell the item only when the buyer’s valuation exceeds the threshold. However, designing a revenue-optimal mechanism to sell two heterogeneous items is a harder problem. Even the simplest setting with two items and one buyer remains unsolved as yet. The partial characterizations available in the literature have succeeded in solving the problem largely for distributions that are bordered by the coordinate axes. We consider distributions that do not contain (0; 0) in their support sets. Specifically, we consider the buyer’s valuations to be distributed uniformly over arbitrary rectangles in the positive quadrant. We anticipate that the special cases we solve could be a guideline to un-derstand the methods to solve the general problem. We explore two different methods – the duality method and the virtual valuation method – and apply them to solve the problem for distributions that are not bordered by the coordinate axes. The thesis consists of two parts.
In the first part, we consider the problem when the buyer has no demand constraints. We assume the buyer’s valuations to be uniformly distributed over an arbitrary rectangle [c1; c1 + b1] [c2; c2 + b2] in the positive quadrant. We first study the duality approach that solves the problem for the (c1; c2) = (0; 0) case. We then nontrivially extend this approach to provide an explicit solution for arbitrary nonnegative values of (c1; c2; b1; b2). We prove that the optimal mechanism is to sell the two items according to one of eight simple menus. The menus indicate that the items must be sold individually for certain values of (c1; c2), the items must be bundled for certain other values, and the auction is an interplay of individual sale and a bundled sale for the remaining values of (c1; c2). We conjecture that our method can be extended to a wider class of distributions. We provide some preliminary results to support the conjecture.
In the second part, we consider the problem when the buyer has a unit-demand constraint. We assume the buyer’s valuations (z1; z2) to be uniformly distributed over an arbitrary rectangle [c; c + b1] [c; c + b2] in the positive quadrant, having its south-west corner on the line z1 = z2. We first show that the structure of the dual measure shows significant variations for different values of (c; b1; b2) which makes it hard to discover the correct dual measure, and hence to compute the solution. We then nontrivially extend the virtual valuation method to provide a complete, explicit solution for the problem considered. In particular, we prove that the optimal mechanism is structured into five simple menus. We then conjecture, with promising preliminary results, that the optimal mechanism when the valuations are uniformly distributed in an arbitrary rectangle [c1; c1 + b1] [c2; c2 + b2] is also structured according to similar menus.
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[en] INFRARED OPTO-ELECTRONIC DEVICE FOR DETECTION AND MEASURING VELOCITY OF BALLS USED AS CLEANING ARTIFACTS OF HEAT EXCHANGERS / [pt] DISPOSITIVO OPTO-ELETRÔNICO NA FAIXA DO INFRAVERMELHO PARA DETECÇÃO E MEDIÇÃO DE VELOCIDADE DE ESFERAS UTILIZADAS COMO ARTEFATOS DE LIMPEZA DE TROCADORES DE CALORJOAO RICARDO CORTES NUNES 02 October 2018 (has links)
[pt] Esta dissertação de Mestrado teve por objetivo a concepção, desenvolvimento e validação de um dispositivo opto-eletrônico, que opera na faixa do infravermelho, para detecção e medição da velocidade de esferas em meios turvos. A motivação para desenvolvimento deste tema resultou da necessidade de controlar a circulação de esferas para instrumentar um sistema alternativo de limpeza de trocadores de calor de hidrogeradores, que faz uso de artefatos abrasivos de geometria esférica. O método utilizado fundamenta-se no processamento do sinal eletrônico gerado por um circuito que produz pulsos proporcionais ao tempo de passagem da esfera no interior do contador, a cada interrupção do feixe luminoso. O tratamento do sinal, gerado por pares de sensores opto-eletrônicos perpendiculares entre si e montados transversalmente ao fluxo de água de resfriamento que transporta as esferas, é realizado por um controlador lógico programável, que atribui inteligência ao sistema. Dentre os resultados obtidos, constatou-se que o dispositivo consegue detectar esferas circulantes quando transportadas por fluxos de água com diferentes graus de turbidez (ensaios em laboratório) ou quando em operação no ambiente da usina hidrelétrica, cuja opacidade da água de resfriamento é dada pela incrustação removida durante o processo de limpeza. Como conclusão, pode-se afirmar que o dispositivo opto-eletrônico proposto atende às necessidades do projeto de construção de um sistema alternativo de limpeza por esferas abrasivas, conseguindo descartar falsos positivos na contagem das esferas, a exemplo de bolhas de ar ou partículas de incrustação cujas dimensões críticas diferem daquelas das esferas abrasivas. / [en] This dissertation aimed at the design, development and validation of an optoelectronic device, operating in the infrared range, for counting and measuring the velocity of spheres in turbid media. The motivation to develop this theme resulted from the need to control the spheres circulation to implement an alternative system for cleaning heat exchangers used to cool hydrogenerators, which make use of spherical abrasive artefacts. The methodology used is based on the processing of the electronic signal generated by a circuit that produces pulses proportional to the time of passage of the sphere inside the meter, at each interruption of the light beam. The processing of the signal, which is generated by pairs of mutually perpendicular optoelectronic sensors and mounted transversely to the flow of cooling water carrying the spheres, is performed by a programmable logic controller, which provides intelligence to the system. Among the obtained results, it was verified that the device can detect circulating spheres both when transported by water flows with different degrees of turbidity (laboratory tests) and when in operation in the environment of the hydroelectric plant, whose opacity of the cooling water is given by the fouling removed during the cleaning process. As a conclusion, it can be stated that the proposed optoelectronic device meets the needs of the construction of the alternative system of cleaning by abrasive spheres and can eliminate false positives in the counting of the spheres, such as air bubbles or incrustation particles whose critical dimensions differ from those of the abrasive spheres.
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Estudo da morfologia e estrutura de filmes de oxinitreto de silício (SiOxNy) obtidos pela técnica de PECVD. / Morphological and structural studies of silicon oxynitride films (SiOxNy) obtained by PECVD technique.Denise Criado Pereira de Souza 31 July 2007 (has links)
Neste trabalho são apresentados resultados da caracterização estrutural e morfológica de filmes de oxinitreto de silício (SiOxNy) depositados pela técnica de deposição química a vapor assistida por plasma (PECVD) a baixa temperatura (320°C). O objetivo deste trabalho é relacionar a composição química de ligas amorfas de SiOxNy com suas propriedades ópticas, estruturais, morfológicas e mecânicas visando sua aplicação em dispositivos elétricos, optoeletrônica e microestruturas. A proposta é dar continuidade a trabalhos prévios desenvolvidos no grupo, que demonstraram a viabilidade de controlar a composição química e, como conseqüência, controlar as propriedades como o índice de refração, constante dielétrica e fotoluminescência de filmes de SiOxNy. As condições de deposição foram ajustadas de forma a obter dois tipos de material: filmes de SiOxNy de composição química controlável entre a do SiO2 e a do de Si3N4 e filmes de SiOxNy com composição rica em Si. O material foi caracterizado pelas técnicas de elipsometria, índice de refração por prisma acoplado, RBS (Rutherford Backscattering Spectroscopy), FTIR (Fourier Transform Infrared Spectroscopy), XANES (X-Ray Absorption Near Edge Spectroscopy) na borda K do Si, O e N, medida de stress residual e microscopia eletrônica de varredura (Scanning Electron Microscopy) e de transmissão (Transmission Electron Microscopy). Os resultados mostraram que os filmes com composição química intermediária entre a do SiO2 e a do Si3N4 apresentam arranjo estrutural estável com a temperatura, mantendo as ligações e a estrutura amorfa mesmo após tratamentos térmicos a 1000°C. Também fora demonstrada a possibilidade de obter um material com baixo stress residual e índice de refração ajustável entre 1,46 e 2, resultados ótimos para aplicações em MOEMS (micro-opto-electro- mechanical systems). Já nas amostras ricas em Si foi observada a formação de diferentes fases, sendo uma delas formada por aglomerados de Si e a outra por material constituído por uma mistura de ligações Si-O e Si-N. Este material apresenta a formação de nanocristais de Si, dependendo do conteúdo de Si e das condições do tratamento térmico, permitindo assim, sua aplicação em dispositivos emissores de luz. / In this work results on the morphological and structural characterization of silicon oxynitride (SiOxNy) films deposited by plasma enhanced chemical vapor deposition technique (PECVD) at low temperature (320°C) are presented. The main goal is to correlate the chemical composition of amorphous SiOxNy alloys to their optical, structural, morphological and mechanical properties intending applications on electrical, optoelectronic and micromechanical devices. The proposal is to continue previous research developed in this group, which demonstrated the possibility of tuning the chemical composition and, consequently, the SiOxNy films properties such as refractive index, dielectric constant and photoluminescence by the precise control of the deposition parameters. The deposition conditions were adjusted in order to obtain to material types, SiOxNy films with tunable chemical composition between SiO2 and Si3N4 and silicon-rich SiOxNy. The characterization was performed by elipsometry, refractive index by coupled prism, RBS (Rutherford Backscattering Spectroscopy), FTIR (Fourier Transform Infrared Spectroscopy), XANES (X-Ray Absorption Near Edge Spectroscopy) on K edge of Si, O and N, residual stress measurement and Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). The films with chemical composition between SiO2 and Si3N4 presented stable structural arrangement with temperature, maintaining the chemical bonds and the amorphous structure after high temperature annealing. Also the results demonstrated the possibility of producing a low residual stress material and an adjustable refractive index since in the 1.46 to 2 range, excellent result for MOEMS devices (micro-opto-electro- mechanical systems applications. For silicon rich-samples the formation of different phases was observed, one formed by Si clusters and other one by a mixture of Si-O and Si-N bonds. Depending on the Si content and on the annealing conditions this material can present nanocristals, results which allowed us to understand and to optimize this material for light emitting devices applications.
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Étude de la passivation du silicium dans des conditions d'irradiation électronique de faible énergie / Silicon passivation study under low energy electron irradiation conditionsCluzel, Romain 29 November 2010 (has links)
L'illumination par la face arrière amincie des imageurs CMOS est une des voies étudiées pour accroître le rapport signal à bruit et ainsi la sensibilité de ce capteur. Or cette configuration est adaptée à la détection des électrons dans la gamme d'énergie [[1 ; 12 keV]. L'électron incident crée, par multiplication, plusieurs centaines d'électrons secondaires, proche de la surface. Une couche de passivation par surdopage P++ de la face arrière est nécessaire afin de réduire le nombre de recombinaisons de surface des électrons. Par effet de champ électrique, la couche de passivation augmente le nombre de charges collectées, et ainsi le gain de collection du capteur. L'objectif de cette thèse est de développer des moyens de caractérisation pour déterminer in situ les performances sur le gain de collection de six procédés de passivation. Préalablement, le profil de dépôt d'énergie de l'électron incident est étudié au moyen d'une simulation Monte-Carlo puis d'un modèle analytique. Un modèle associé du gain de collection indique qu'à forte énergie, l'effet miroir de la passivation est déterminant tandis qu'à faible énergie, l'épaisseur de la passivation est un facteur clef. Une première expérience d'irradiation de diodes étendues P++=N permet de dégager l'influence du procédé de passivation sur les recombinaisons de surface. Grâce à une seconde caractérisation de type < événement unique >, directement sur capteur CMOS aminci, les passivations sont discriminées quant à leur effet miroir et l'étalement de la charge qu'elles induisent. Le recuit laser d'activation des dopants peut s'avérer une source d'inhomogénéités du gain sur la surface de la matrice / Backside illuminated thinned CMOS imaging system is a technology developed to increase the signal to noise ratio and the sensibility of such sensors. This configuration is adapted to the electrons detection from the energy range of [1 - 12 keV]. The impinging electron creates by multiplication several hundreds of secondary electrons close to the surface. A P++ highly-doped passivation layer of the rear face is required to reduce the secondary electron surface recombination rate. Thanks to the potential barrier induced by the P++ layer, the passivation layer increases the collected charges number and so the sensor collection gain. The goal of this study is to develop some experimental methods in order to determine the effect of six different passivation processes on the collection gain. Beforehand, the energy profile deposited by an incident electron is studied with the combination of Monte-Carlo simulations and some analytical calculations. The final collection gain model shows that the mirror effect from the passivation layer is a key factor at high energies whereas the passivation layer has to be as thin as possible at low energies. A first experimental setup which consists in irradiating P++=N large diodes allows to study the passivation process impacts on the surface recombinations. Thanks to a second setup based on a single event upset directly on thinned CMOS sensor, passivation techniques are discriminated in term of mirror effect and the implied spreading charges. The doping atoms activation laser annealing is turn out to be a multiplication gain inhomogeneity source impacting directly the matrix uniformity
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TiO2 nanotube based dye- sensitised solar cellsCummings, Franscious Riccardo January 2012 (has links)
Philosophiae Doctor - PhD / This work investigated the synthesis of Al2O3-coated TiO2 nanotubes via the anodisation technique for application in DSCs. TiO2 nanotube arrays with
an average length of 15 μm, diameter of 50 nm and wall thickness of 15 nm
were synthesised via anodisation using an organic neutral electrolyte consisting
of 2 M H2O + 0.15 M NH4F + ethylene glycol (EG) at an applied voltage of 60 V
for 6 hours. In addition, scanning electron microscope (SEM) micrographs
showed that anodisation at these conditions yields nanotubes with smooth
walls and hexagonally shaped, closed bottoms. X-ray diffraction (XRD) patterns revealed that the as-anodised nanotubes were amorphous and as such were annealed at 450 °C for 2 hours in air at atmospheric pressure, which yielded crystalline anatase TiO2 nanotubes. Highresolution transmission electron microscope (TEM) images revealed that the nanotube walls comprised of individual nano-sized TiO2 crystallites.
Photoluminescence (PL) spectroscopy showed that the optical properties, especially the bandgap of the TiO2 nanotubes are dependent on the crystallinity, which in turn was dependent on the structural characteristics, such as the wall thickness, diameter and length. The PL measurements were supplemented by Raman spectra, which revealed an increased in the quantum confinement of the optical phonon modes of the nanotubes synthesised at low anodisation voltages, consequently yielding a larger bandgap
The annealed nanotubes were then coated with a thin layer of alumina (Al2O3) using a simple sol-gel dip coating method, effectively used to coat films of nanoparticles. Atomic force microscopy (AFM) showed that the average nanotube diameter increased post sol-gel deposition, which suggests that the nanotubes are coated with a layer of Al2O3. This was confirmed with HR-TEM, in conjunction with selected area electron diffraction (SAED) and XRD analyses, which showed the coating of the nanotube walls with a thin layer of amorphous Al2O3 with a thickness between 4 and 7 nm. Ultraviolet-visible (UVvis) absorbance spectra showed that the dye-adsorption ability of the nanotubes are enhanced by the Al2O3 coating and hence is a viable material for
solar cell application. Upon application in the DSC, it was found by means of photo-current density – voltage (I – V) measurements that a DSC fabricated with a 15 μm
thick layer of bare TiO2 nanotubes has a photon-to-light conversion efficiency of
4.56%, which increased to 4.88% after coating the nanotubes with a layer of
alumina. However, these devices had poorer conversion efficiencies than bare
and Al2O3-coated TiO2 nanoparticle based DSCs, which boasted with efficiencies of 6.54 and 7.26%, respectively. The low efficiencies of the TiO2 nanotube based DSCs are ascribed to the low surface area of the layer of nanotubes, which yielded low photocurrent densities. Electrochemical impedance spectroscopy (EIS) showed that the electron lifetime in the alumina coated nanotubes are almost 20 times greater than in a bare layer of nanoparticles. In addition, it was also found that the charge transfer resistance at the interface of the TiO2/dye/electrolyte is the lowest for an Al2O3-coated TiO2 layer.
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Analyse de performance d'un commutateur de paquets hybride opto-électronique / Performance analysis of hybrid opto-electronic packet switchSamoud, Wiem 11 October 2016 (has links)
La fibre optique demeure le support de transmission le plus utilisé, portant le trafic à une énergie par bit relativement faible. Cependant, à cause de l’absence de mémoire toutoptique pratique, la commutation de paquets est toujours exécutée électriquement. Les conversions Optiques Électriques Optiques (O-E-O) nécessaires font de la commutation l’un des domaines les plus consommateurs d’énergie. Ce problème est de plus en plus important spécialement avec la croissance exponentielle du trafic dans les réseaux optiques. Un défi majeur à prendre en considération dans la conception de futurs réseaux optiques est la restriction de leur consommation énergétique. De ce fait, dans le cadre de cette thèse, nous étudions un commutateur hybride opto-électronique qui consiste en une matrice de commutation optique complétée par une mémoire électronique partagée. L’analyse de performance prenant en compte différentes classes de service, distributions de paquets et méthodes de connectivité du commutateur (canaux WDMet/ou SDM), montre que, grâce aux stratégies de commutation établies, le commutateur hybride répond aux besoins de toutes les classes de service en termes de taux de perte de paquets, la charge durable du système et la latence. De plus, il réduit significativement les conversions O-E-O par rapport aux commutateurs électriques commercialisés, puisqu’ils n’auront lieu que pour les paquets mis en mémoire d’attente. Nous défendons que le commutateur de paquets hybride opto-électronique satisfait les exigences en qualité de service et pourrait être une solution prometteuse pour réduire la consommation d’énergie des réseaux optiques. / Most transmission systems are based on optical fibers, carrying the traffic at a relatively low energy per bit. However, due to the lack of mature optical buffers, packet switching is still performed electrically. The required Optical-Electrical-Optical (O-E-O) conversions make the switching one of the areas with the fastest-growing energy consumption. A major challenge that must be met in designing future optical networks is curbing their energy consumption. Therefore, within this thesis, we investigate a hybrid optoelectronic switch which consists of an optical switching matrix supplemented with a shared electronic buffer. Performance analysis taking into account different classes of service, packet classifications and switch connectivity methods (WDM and/or SDM channels), shows that, thanks to the established switching strategies, the hybrid switch satisfies the requirements of all the different classes of service in terms of Packet Loss Rate, sustainable system load and latency. Moreover, it significantly reduces the O-E-O conversions compared to commercial off-the-shelf electrical switches, since they occur only for buffered packets. We defend that the hybrid opto-electronic packet switch meets the requirements on quality of service and could be a promising solution to reduce the energy consumption of optical networks.
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Určování velikosti plochy a rozměrů vybraných objektů v obraze / Determination of an area and proportions of selected objects in a pictureMittner, Ondřej January 2010 (has links)
The master’s thesis describes hardware opto-electronic instruments for contactless measurement of surfaces. It concentrates on instruments used for opto-electrical transformation of a taking scene and software processing of digital pictures. It presents selected methods of pre-processing, segmenting and following final modifications of these pictures. Then it deals with measuring of areas of surfaces and sizes of selected objects in these pictures and conversion of results from pixels to SI system of units. Possible divergences of measuring are described as well. A flow chart of a program for automatic and manual measuring of surfaces and sizes of objects in a picture, which is commented in detail, is a part of the thesis. The main product of this thesis is application Merovo, which provides measuring of an area and proportions of included objects. This application is analysed and described in detail in this thesis.
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Conductive 2D Conjugated Metal–Organic Framework Thin Films: Synthesis and Functions for (Opto-)electronicsLiu, Jinxin, Chen, Yunxu, Feng, Xinliang, Dong, Renhao 30 May 2024 (has links)
Two-dimensional conjugated metal–organic frameworks (2D c-MOFs), possessing extended π–d conjugated planar structure, are emerging as a unique class of electronic materials due to their intrinsic electrical conductivities. Taking advantage of the large-area flat surface, 2D c-MOF thin films allow facile device integration with sufficient electrode contact, high device stability, and high charge transport, thereby emerging as appealing active layers for a broad range of electronic applications. Synthesis and device investigation of thin films are of great importance for their further development, which are systematically summarized in the current review. Here, the authors firstly introduce the molecular structures of representative 2D c-MOFs and present the fundamental understanding on structure–property relationships. After that, the state-of-art synthetic methodologies toward high-quality 2D c-MOF thin films are summarized, including exfoliation and reassembly (ERA), liquid-interface-assisted synthesis (LIAS), and chemical vapor deposition (CVD). By considering the advantages of 2D c-MOF films in device integration, remarkable progress in (opto-)electronic device applications are discussed, such as field-effect transistors (FETs), chemiresistive sensors, photodetectors, superconductors, and thermoelectrics. In the end, the remained challenges about the development of 2D c-MOF films for (opto-)electronics are highlighted and possible future directions are proposed to address these challenges.
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半導體及光電產業廠務廢水系統工程承攬策略之探討 - 以T公司為例王誌鴻 Unknown Date (has links)
半導體及光電產業快速發展,已成為台灣賴以與國際競爭之兩大經濟產業,為維持台灣既有之製造優勢及實力,並加強設計創新能力,政府擬定「新世紀兩兆雙星產業發展計畫」,明確勾勒出我國對於半導體及平面顯示器兩大產業之發展方向。邁入二十一世紀,新興國家快速崛起,台灣產業發展面臨強大的競爭,尤其在中國大陸,各廠為維持既有的競爭優勢及提昇市場佔有率,唯有加速持續投資建廠,一則創造規模經濟以降低生產成本,另一方面更以領先技術築高競爭者之進入障礙。
近年來,國內各大廠積極建置規劃12吋晶圓廠及TFT-LCD八代廠,由於均屬於高資本之投資,擬定發包策略,故強化採購人員的談判技巧及遴選合適的承攬廠商,以最短的時間及最少的預算來完成建廠,將成為建廠業者主要的政策。
本研究乃在探究哪些關鍵因素足以影響建廠廠商之採購發包策略,再以工程承攬商的觀點提出應對,發展出本身之承攬策略。由於有關建廠發包策略之相關文獻不多,故本研究主要採實地專家訪談,訪談半導體廠及TFT-LCD廠廠務及採購主管對於建廠採購發包之看法,配合文獻所提之各要點發展問卷,透過問卷了解高階主管、廠務人員及採購人員對發包有何不同觀點,同時面對不同之發包型態與關鍵影響因素,利用層級分析法(Analytical Hierarchy Process;AHP),發展適用於不同類型採購發包決策人員之各構面及次準則指標之權重,並與其他相關研究做比較,探討差異所在及原因,綜合研究建廠廠商高階主管、廠務人員及採購人員對於新建廠務系統發包之需求,進而擬定出承攬商因應之承攬策略,以提供決策者進行執行決策之參考。
關鍵字:半導體產業、光電產業、工程承攬、發包策略、承攬策略 / As the developments in semiconductor and opto-electronic industries grow rapidly, they have become two major economic industries of Taiwan to compete globally. In order to keep Taiwan’s exiting advantages in manufacturing and its strength and also to improve its design and innovation abilities, Taiwan government has proposed “The New Century Two Trillions Double Stars Industries Development Plan” and the plan has clearly outlined the development directions for both semiconductor and flat panel display industries in Taiwan. While stepping into 21st century, the developments in Taiwan industries have faced enormous competition due to the sharp rising of emerging countries, China especially. For maintaining its competition advantages and upgrading its market shares, every enterprise only has to accelerate on making investments to the plant construction. By doing so, it aims to create economic scale to lower the product costs and it also aims to increase the entry barriers for competitors through its leading advanced technologies.
In recent years, major enterprises in Taiwan have aggressively engaging in 12” fab construction and TFT-LCD 8th generation plant construction planning. Since both are the investments required high capital, the enhancement in procurement professionals’ negotiation skills and the selections of qualified contractors, the drawing up for the contracting strategies and the completion of the plant construction within shortest time with minimum budget are the major policies for the enterprises of the plant construction.
This paper aims at probing into what are the key factors that will have influence on the procurement and contracting strategies made by the enterprises of the plant construction and followed by responding proposals provided from the contractors’ of the plant construction points of view and also the developments of the contracting strategies made by them. Since there are not many researches about the topic on the contracting strategies of the plant construction, the study is mainly from live interviews with experts and through interviews with facility managers and procurement mangers of semiconductor and TFT-LCD plants to understand their points of views on the procurement and contracting strategies of the plant construction. In addition, also matching up with major points in bibliographies, the questionnaire has been developed and the questionnaire survey has revealed various points of views about contracting from top management, facility professionals and procurement professionals and the key influential factors when facing different types of contracting meanwhile. By using Analytical Hierarchy Process, it has applied on every aspect and the percentages of the secondary indexes for the decision makers’ of different types of procurement and contracting and the results have also been compared with other related researches in order to figure out the differences and their causes. Combined with the study on the demand from top management, facility professionals and procurement professionals of the enterprises of the plant construction for the contracting of new plant construction systems, the contractors’ can draw up the responding contracting strategies and provide them to decision makers as the reference whiling they are making judgments.
Key words:
Semiconductor industries, Opto-electronic industries, Contracting work, Procurement strategies, Contracting strategies.
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