This thesis explores the use of nonlinear crystals from theKTiOPO4(KTP) family with the aim to extend the possibleapplications for laser sources and to gain more knowledge aboutthe material’s benefits and limits. The work focussed onoptical parametric oscillators (OPOs) and optical parametricamplifiers (OPAs), which employ second order nonlinearprocesses. Both devices transfer energy from a laser beam at aparticular wavelength to a different wavelength, which istuneable. In OPOs two new beams at different wavelengths aregenerated, whereas in OPAs an existing weak beam is amplified.The essential part of these devices, which enables theoccurrence of the energy conversion, is a nonlinear crystal. Inthis work the ferroelectric crystals KTP and RbTiOPO4(RTP) have been utilized. By modifying the material’s structure,quasi-phasematching can be obtained, which is a crucialrequirement for achieving efficient energy conversion betweenthe incident and the generated waves. The fabrication ofquasi-phasematched crystals is dependent on the controlledreversion of the material’s spontaneous polarisation,which is accomplished by periodic electric field poling. Nanosecond pulses of more than 200 kW were generated in the“eye-safe”region by employing a double pass OPA.Small signal gains exceeding 75 dB were obtained for anessentially diffraction limited beamwithout spectralbroadening of the seed. By subsequent signal coupling intofibres substantial broadening was accomplished. A systematicmeasurement series of several RTP crystals allowed us toaccurately determine the wavelength and temperature dispersionof the refractive index, which are two essential requirementsfor further employment of this material. The OPOs based on RTPwere widely tuneable by controlling the temperature. It wasalso concluded that RTP behaves similar to KTP in parametricdevices, thus being a material, which can sustain high powers,possesses large nonlinear coefficients and can operate in abroad wavelength region.Efficient Raman oscillation concurrent with parametricoscillation was observed and analysed in several KTP samples.This gave further insight into the processes taking placeinside the material when performing as a frequency converter,if the generated idler lies in the absorption band.This thesis also covers the investigation of afemtosecond optical parametric chirped pulse amplifier.Temporally stretched seed pulses were amplified to 85 µJ,resulting in a gain above 60 dB, and subsequent recompressionresulted in 270 fs pulses. <b>Keywords:</b>nonlinear optics, KTiOPO4, optical parametric oscillator, optical parametricamplifier, RbTiOPO4, quasi-phasematching, electric field poling,stimulated Raman scattering. / NR 20140805

京都大学 / 0048 / 新制・課程博士 / 博士(情報学) / 甲第20512号 / 情博第640号 / 新制||情||111(附属図書館) / 京都大学大学院情報学研究科複雑系科学専攻 / (主査)教授 青柳 富誌生, 教授 船越 満明, 教授 西村 直志 / 学位規則第4条第1項該当 / Doctor of Informatics / Kyoto University / DFAM

京都大学 / 0048 / 新制・課程博士 / 博士(情報学) / 甲第21213号 / 情博第666号 / 新制||情||115(附属図書館) / 京都大学大学院情報学研究科先端数理科学専攻 / (主査)講師 青柳 富誌生, 教授 西村 直志, 准教授 田口 智清, 講師 水原 啓暁 / 学位規則第4条第1項該当 / Doctor of Informatics / Kyoto University / DFAM

ON-CHIP THERMAL SENSING IN DEEP SUB-MICRON CMOS August 2007 BASAB DATTA B.S., G.G.S. INDRAPRASTHA UNIVERSITY, NEW DELHI M.S.E.C.E, UNIVERSITY OF MASSACHUSETTS AMHERST Directed by: Professor Wayne P. Burleson Aggressive technology scaling and an increasing demand for high performance VLSI circuits has resulted in higher current densities in the interconnect lines and increasingly higher power dissipation in the substrate. Because a significant fraction of this power is converted to heat, an exponential rise in heat density is also experienced. Different activities and sleep modes of the functional blocks in high performance chips cause significant temperature gradients in the substrate and this can be expected to further increase in the GHz frequency regime. The above scenario motivates the need for a large number of lightweight, robust and power-efficient thermal sensors for accurate thermal mapping and thermal management. We propose the use of Differential Ring Oscillators (DRO) for thermal sensing at the substrate level, utilizing the temperature dependence of the oscillation frequency. They are widely used in current VLSI for frequency synthesis and on-die process characterization; hence provide scope of reusability in design. The DRO oscillation frequency decreases linearly with increase in temperature due to the decrease in current in the signal paths. In current starved inverter topology using the 45nm technology node, the DRO based thermal sensor has a resolution of 2°C and a low active power consumption of 25µW, which can be reduced further by 60-80% by power-gating the design. Current thermal scaling trends in multilevel low-k interconnect structures suggest an increasing heat density as we move from substrate to higher metal levels. Thus, the deterioration of interconnect performance at extreme temperatures has the capability to offset the degradation in device performance when operating at higher than normal temperatures. We propose using lower-level metal interconnects to perform the thermal sensing. A resolution of ~5°C is achievable for both horizontal and vertical gradient estimation (using current generation time-digitizers). The time-digitization unit is an essential component needed to perform interconnect based thermal sensing in deep nanometer designs but it adds area and power overhead to the sensor design and limits the resolution of the wire-based sensor. We propose a novel sensor design that alleviates complexities associated with time-to-digital conversion in wire-based thermal sensing. The IBOTS or Interconnect Based Oscillator for Thermal Sensing makes use of wire-segments between individual stages of a ring-oscillator to perform thermal sensing using the oscillator frequency value as the mapping to corresponding wire temperature. The frequency output can be used to generate a digital code by interfacing the IBOTS with a digital counter. In 45nm technology, it is capable of providing a resolution of 1°C while consuming an active power of 250-360µW.

We solve RLL-relation with fundamental orthogonal/symplectic R-matrix examining polynomial with respect to u expressions for L-operator. We use creation-annihilation operators to construct a realization of Yangian generators.

The development of semiconductor technology has led to the significant scaling of the transistor dimensions -The transistor gate length drops down to tens of nanometers and the gate oxide thickness to 1 nm. In the future several years, the deep submicron devices will dominate the semiconductor industry for the high transistor density and the corresponding performance enhancement. For these devices, the reliability issues are the first concern for the commercialization. The major reliability issues caused by voltage and/or temperature stress are gate oxide breakdown (BD), hot carrier effects (HCs), and negative bias temperature instability (NBTI). They become even more important for the nanoscale CMOS devices, because of the high electrical field due to the small device size and high temperature due to the high transistor densities and high-speed performances. This dissertation focuses on the study of voltage and temperature stress-induced reliability issues in nanoscale CMOS devices and circuits. The physical mechanisms for BD, HCs, and NBTI have been presented. A practical and accurate equivalent circuit model for nanoscale devices was employed to simulate the RF performance degradation in circuit level. The parameter measurement and model extraction have been addressed. Furthermore, a methodology was developed to predict the HC, TDDB, and NBTI effects on the RF circuits with the nanoscale CMOS. It provides guidance for the reliability considerations of the RF circuit design. The BD, HC, and NBTI effects on digital gates and RF building blocks with the nanoscale devices – low noise amplifier, oscillator, mixer, and power amplifier, have been investigated systematically. The contributions of this dissertation include: It provides a thorough study of the reliability issues caused by voltage and/or temperature stresses on nanoscale devices – from device level to circuit level; The more real voltage stress case – high frequency (900 MHz) dynamic stress, has been first explored and compared with the traditional DC stress; A simple and practical analytical method to predict RF performance degradation due to voltage stress in the nanoscale devices and RF circuits was given based on the normalized parameter degradations in device models. It provides a quick way for the designers to evaluate the performance degradations; Measurement and model extraction technologies, special for the nanoscale MOSFETs with ultra-thin, ultra-leaky gate oxide, were addressed and employed for the model establishments; Using the present existing computer-aided design tools (Cadence, Agilent ADS) with the developed models for performance degradation evaluation due to voltage or/and temperature stress by simulations provides a potential way that industry could use to save tens of millions of dollars annually in testing costs. The world now stands at the threshold of the age of nanotechnology, and scientists and engineers have been exploring here for years. The reliability is the first challenge for the commercialization of the nanoscale CMOS devices, which will be further downscaling into several tens or ten nanometers. The reliability is no longer the post-design evaluation, but the pre-design consideration. The successful and fruitful results of this dissertation, from device level to circuit level, provide not only an insight on how the voltage and/or temperature stress effects on the performances, but also methods and guidance for the designers to achieve more reliable circuits with nanoscale MOSFETs in the future.

There is increasing interest in the generation of very short laser pulses, even down to attosecond (10-18 s) durations. Laser systems with femtosecond pulse durations are needed for these applications. For many of these applications, positioning of the maximum electric field within the pulse envelope can affect the outcome. The peak of the electric field relative to the peak of the pulse is called the Carrier Envelope Phase (CEP). Controlling the position of the electric field becomes more important when pulse duration approaches single-cycle. This thesis focuses on the stabilization of a quasi-single-cycle laser facility. Improvements to this already-established laser facility, HERACLES (High Energy, Repetition rate Adjustable, Carrier-Locked-to-Envelope System) described in this thesis include a stabilized pump line and the improvement in CEP stabilization electronics. HERACLES is built upon an Optical Parametric Chirped Pulse Amplification (OPCPA) architecture. This architecture uses Optical Parametric Amplification (OPA) as the gain material to increase the output energy of the system. OPA relies on a nonlinear process to generate high gain (106 ) with ultra-wide bandwidth. Instabilities in the OPA driving pump energy can create dynamically fluctuations in the final OPCPA output energy. To reduce these fluctuations two key upgrades were implemented on the pump beam. Both were major improvements in the stability. Firstly, an improved regenerative amplifier design reduced beam pointing fluctuations. Secondly, the addition of a pump monitoring system with feedback-control eliminated long-term power drifts. Both enhanced the OPA pulse-to-pulse and long-term stability. iv To improve the stability in measuring CEP drifts, modification of the feedback electronics was needed. The modification consisted of integrating noise reduction electronics. This novel noise reducer uses a similar process to a super-heterodyne receiver. The noise reducer resulted in 60 dB reduction of out-of-band noise. This led to increased signal quality with cleaner amplification of weaker signals. The enhanced signal quality led to more reliable long-term locking. The synthetically increased signal-to-noise ratio allows locking of the CEP frequency below the typically requirements. This integration allows relaxed constraints on the laser systems. The optics and electronics of a high-power, quasi-single cycle laser facility were improved. This thesis included the stabilization of the pump line and the stabilization of the CEP. This work allows for new long-duration experiments.

Thulium based fiber lasers represent a promising alternative for pulse energy scaling and high peak power generation with ytterbium based systems at 1µm. Advantages of thulium arise from the operation at longer wavelengths and a large gain bandwidth (1.8-2.1µm). Nonlinear effects, such as self phase modulation, stimulated Raman scattering and stimulated Brillouin scattering generally limit peak power scaling in fiber lasers. The longer wavelength of thulium fiber lasers and large mode field areas can significantly increase the nonlinear thresholds. Compared to 1µm systems, thulium fiber lasers enable single mode guidance for two times larger mode field diameter in step index fibers. Similar behavior is expected for index guiding thulium doped photonic crystal fibers. In this work a novel thulium doped rod type photonic crystal fiber design with large mode field diameter ( > 50µm) was first characterized in CW-lasing configuration and then utilized as final amplifier in a two stage master oscillator power amplifier. The system generated MW-level peak power at 6.5ns pulse duration and 1kHz repetition rate. This world record performance exemplifies the potential of thulium fiber lasers to supersede ytterbium based systems for very high peak power generation in the future. As part of this work a computer model for the transient simulation of pulsed amplification in thulium based fiber lasers was developed. The simulations are in good agreement with the experimental results. The computer model can be used for efficient optimization of future thulium based fiber amplifier designs.

Nanoscale p-channel transistors under negative gate bias at an elevated temperature show threshold voltage degradation after a short period of stress time. In addition, nanoscale (45 nm) n-channel transistors using high-k (HfO2) dielectrics to reduce gate leakage power for advanced microprocessors exhibit fast transient charge trapping effect leading to threshold voltage instability and mobility reduction. A simulation methodology to quantify the circuit level degradation subjected to negative bias temperature instability (NBTI) and fast transient charge trapping effect has been developed in this thesis work. Different current mirror and two-stage operation amplifier structures are studied to evaluate the impact of NBTI on CMOS analog circuit performances for nanoscale applications. Fundamental digital circuit such as an eleven-stage ring oscillator has also been evaluated to examine the fast transient charge transient effect of HfO2 high-k transistors on the propagation delay of ring oscillator performance. The preliminary results show that the negative bias temperature instability reduces the bandwidth of CMOS operating amplifiers, but increases the amplifier's voltage gain at mid-frequency range. The transient charge trapping effect increases the propagation delay of ring oscillator. The evaluation methodology developed in this thesis could be extended to study other CMOS device and circuit reliability issues subjected to electrical and temperature stresses.

A study is presented of the instability mechanisms of a damped axisymmetric circular disk of uniform thickness rotating about its axis with constant angular velocity and subjected to various transverse space-fixed loading systems. The natural frequencies of spinning floppy disks are obtained for various nodal diameters and nodal circles with a numerical and an approximate method. Exploiting the fact that in most physical applications the thickness of the disk is small compared with its outer radius, we use their ratio to define a small parameter. Because the nonlinearities appearing in the governing partial-differential equations are cubic, we use the Galerkin procedure to reduce the problem into a finite number of coupled weakly nonlinear second-order equations. The coefficients of the nonlinear terms in the reduced equations are calculated for a wide range of the lowest modes and for different rotational speeds. We have studied the primary resonance of a pair of orthogonal modes under a space-fixed constant loading, the principal parametric resonance of a pair of orthogonal modes when the disk is subject to a massive loading system, and the combination parametric resonance of two pairs of orthogonal modes when the excitation is a linear spring. Considering the case of a spring moving periodically along the radius of the disk, we show how its frequency can be coupled to the rotational speed of the disk and lead to a principal parametric resonance. In each of these cases, we have used the method of multiple scales to determine the equations governing the modulation of the amplitudes and phases of the interacting modes. The equilibrium solutions of the modulation equations are determined and their stability is studied. / Master of Science