Electronic circuits comprising organic semiconductor thin-films are part of promising technologies for a renewable power generation and an energy-efficient information technology. Whereas TV and mobile phone applications of organic light emitting diodes (OLEDs) got ready for the market awhile ago, organic photovoltaics still lack in power conversion efficiencies, especially in relation to their current fabrication costs. A major reason for the low efficiencies are losses due to the large number of charge carrier traps in organic semiconductors as compared to silicon. It is the aim of this thesis to identify and quantify charge carrier traps in vacuum-deposited organic semiconductor thin-films and comprehend the reasons for the trap formation. For that, the techniques impedance spectroscopy (IS), thermally stimulated currents (TSC), and photoelectron spectroscopy are utilized. In order to assess the absolute energy of charge carrier traps, the charge carrier transport levels are computed for various hole transport materials such as MeO-TPD, pentacene, and ZnPc. Unlike inorganics, organic semiconductors possess in first-order approximation Gaussian distributed densities of states and temperaturedependent transport levels. The latter shift by up to 300 meV towards the energy gap-mid when changing from room temperature to 10 K as it is done for TSC examinations. The frequency-dependent capacitance response of charge carrier traps in organic Schottky diodes of pentacene and ZnPc are studied via impedance spectroscopy. In undoped systems, deep traps with depths of approx. 0.6 eV and densities in the order of 1016...1017 cm−3 are prevailing. For pentacene, the deep trap density is reduced when the material undergoes an additional purification step. Utilizing p-doping, the Fermi level is tuned in a way that deep traps are saturated. Vice versa, the freeze-out of p-doped ZnPc provides further insight into the influence of trap-filling, impurity saturation and reserve on the Fermi level position in organic semiconductors. Furthermore, charge carrier traps are investigated via thermally stimulated currents. It is shown that the trap depths are obtained correctly only if the dispersive transport of the released charge carriers until their extraction is considered. For the first time, the polarity of charge carrier traps in MeO-TPD, ZnPc, and m-MTDATA is identified from TSC’s differences in release time when spacer layers are introduced in the TSC samples. Simultaneously, tiny hole mobilities in the order of 10−13 cm2 Vs−1 are detected for low-temperature thin-films of the hole transporter material Spiro-TTB. It is shown for Spiro-TTB co-evaporated with the acceptor molecule F6-TCNNQ and a p-doped ZnPc:C60 absorber blend that the doping process creates shallow trap levels. Finally, various organic hole transport materials are examined upon their stability in water and oxygen atmosphere during sample fabrication and storage of the organic electronics. In case of pentacene, ZnPc, MeO-TPD, and m-MTDATA, hole traps are already present in unexposed thin-films, which increase in trap density upon oxygen exposure. A global trap level caused by oxygen impurities is found at energies of 4.7...4.8 eV that is detrimental to hole transport in organic semiconductors. / Elektronische Bauelemente aus Dünnschichten organischer Halbleiter sind Teil möglicher Schlüsseltechnologien zur regenerativen Energiegewinnung und energieeffizienten Informationstechnik. Während Fernseh- und Mobilfunkanwendungen organischer Leuchtdioden (OLEDs) bereits vor einiger Zeit Marktreife erlangt haben, ist die organische Photovoltaik (OPV) noch durch zu hohe Fertigungskosten in Relation zu unzureichenden Effizienzen unrentabel. Ein wesentlicher Grund für die niedrigen Wirkungsgrade sind Verluste durch die im Vergleich zu Silizium hohe Zahl an Ladungsträgerfallen in organischen Halbleitern. Ziel dieser Arbeit ist es, mittels Impedanz-Spektroskopie (IS), thermisch stimulierten Strömen (TSC) und Photoelektronenspektroskopie methodenübergreifend Ladungsträgerfallen in vakuumverdampften organischen Dünnschichten zu identifizieren, zu quantifizieren und ihre Ursachen zu ergründen. Um die Energie von Ladungsträgerfallen absolut beziffern zu können, wird zunächst für verschiedene Lochtransportmaterialien wie z.B. MeO-TPD, Pentazen und ZnPc die Transportenergie aus den in erster Ordnung gaußförmigen Zustandsdichten berechnet. Im Gegensatz zu anorganischen Halbleitern ist die Transportenergie in organischen Halbleitern temperaturabhängig. Sie verschiebt sich beim Übergang von Raumtemperatur zu 10 K, wie für TSC Untersuchungen bedeutsam, um bis zu 300 meV in Richtung der Bandlückenmitte. Mittels Impedanz-Spektroskopie wird die frequenzabhängige Kapazitätsantwort von Ladungsträgerfallen in organischen Schottky-Dioden aus Pentazen und ZnPc untersucht. In undotierten Systemen dominieren Defekte mit Tiefen um 0.6 eV, deren Dichte in der Größenordnung von 1016...1017 cm−3 liegt, sich aber im Fall von Pentazen durch einen zusätzlichen Materialaufreinigungsschritt halbieren lässt. Über p-Dotierung wird das Fermi-Level so eingestellt, dass tiefe Fallen abgesättigt werden können. Umgekehrt liefert das Ausfrieren von p-dotiertem ZnPc weitere Belege für den Einfluss von Fallenzuständen, Störstellen-Erschöpfung und Reserve auf das Fermi-Level in dotierten organischen Halbleitern. Im Weiteren werden Ladungsträgerfallen über thermisch stimulierte Ströme untersucht. Es wird gezeigt, dass die Fallentiefen nur dann konsistent bestimmt werden, wenn der dispersive Transport von freigesetzten Ladungsträgern zur Extraktionsstelle berücksichtigt wird. Durch Einführung von ’Abstandshalterschichten’ werden erstmalig über TSC die Polaritäten von Ladungsträgerfallen in MeO-TPD, ZnPc und m-MTDATA per Laufzeitunterschied bestimmt. Gleichzeitig werden geringste Löcherbeweglichkeiten in der Größenordnung von 10−13 cm2 Vs−1 für stark gekühlte Dünnschichten des Lochtransporters Spiro-TTB gemessen. Wie für Spiro-TTB koverdampft mit dem Akzeptormolekül F6-TCNNQ und p-dotierte Mischschichten der Absorbermaterialien ZnPc und C60 gezeigt, erzeugt Dotierung relativ flache Störstellen. Abschließend werden verschiedene organische Lochtransporter-Materialien auf ihre Stabilität in Wasser- und Sauerstoffatmosphären während der Prozessierung und der Lagerung fertiger elektronischer Bauelemente untersucht. Für Pentazen, ZnPc, MeO-TPD und m-MTDATA werden Löcherfallen in intrinsischen Dünnschichten nachgewiesen. Bei Kontakt mit Sauerstoff nimmt deren Defektdichte zu. Es findet sich ein universales Fallenniveau bei rund 4.7...4.8 eV, verursacht durch Sauerstoffverunreinigungen, welches den Lochtransport in organischen Halbleitern limitiert.

ZnO hat wegen seiner potenziellen Anwendung in elektronischen Geräten und als Katalysator viel Aufmerksamkeit erhalten. Die Struktur und Reaktivität von ZnO-Oberflächen haben eine direkte Bedeutung für die Leistung und Funktionalität dieser Geräte. Daher ist die Definition und das Verständnis der atomistischen Details von ZnO-Oberflächenstrukturen von besonderer Bedeutung. Die atomistischen Details von ZnO-Oberflächen hängen von den Präparationsverfahren ab. Nach der Kristallpräparation ist es notwendig, eine Oberflächencharakterisierung durchzuführen, um eine Verbesserung der Funktionalität und Effizienz von ZnO-basierten opto-elektronischen Bauelementen und Katalysatoren zu erreichen. Die atomistische Wahrnehmung der Reaktion zwischen einem organischen Molekül und ZnO-Oberflächen spielt eine entscheidende Rolle bei der Optimierung der Wasserstoff-on-demand-Lieferung in Brennstoffzellen. Das Verständnis der atomistischen Details von Adsorption, Diffusion und Dissoziation eines organischen Moleküls ebnet den Weg, um die Vorgänge bei der Wasserstofffreisetzung für Brennstoffzellen zu enträtseln. Mit dem Ziel, die Struktur- und Stöchiometriebestimmung mit Hilfe der XPS zu ermöglichen, präsentiere ich in dieser Arbeit die Ergebnisse einer umfassenden theoretischen Studie über die Kernniveauverschiebungen von ZnO-Oberflächenrekonstruktionen. Darüber hinaus biete ich eine gründliche Untersuchung der gemischt-terminierten Oberfläche, indem ich zunächst die Bedingungen untersuche, unter denen sich Methanol-Monolagen auf dieser Kristallfläche bilden können, und dann alle möglichen Wege für deren Reaktion erforsche. Diese Studie liefert ein umfassendes Bild, um die wahrscheinlichsten Reaktionsschritte zu identifizieren, die zur Interpretation der experimentellen Ergebnisse herangezogen werden können. Sie wird zukünftigen theoretischen Studien für ähnliche Reaktionen wie die Dehydrierung und die Kinetik der Monolagenbildung, die hier untersucht wurden, helfen. / Zinc-Oxide (ZnO) has been getting much attention over the past decades because of its potential application in electronic devices and as a catalyst. The structure and reactivity of ZnO surfaces have direct relevance for the performance and functionality of these devices. Therefore, defining and understanding the atomistic details of ZnO surface structures is of particular importance. The atomistic details of ZnO surfaces depend on the preparation procedures. After the crystal preparation, it is necessary to perform a surface characterization, to achieve an improvement in the functionality and efficiency of ZnO-based opto-electronic devices and catalysts. The atomistic perception of the reaction between an organic molecule and ZnO surfaces plays a crucial role in optimizing hydrogen-on-demand delivery in fuel cells, and understanding the atomistic details of adsorption, diffusion, and dissociation of a simple organic molecule paves the way towards unraveling the procedures involved in the hydrogen liberation for fuel cells. In this work, with the aim of enabling structure and stoichiometry determination by using X-ray photoelectron spectroscopy, I present the results of a comprehensive theoretical study on the core-level shifts of ZnO surface reconstructions. Moreover, I provide a thorough investigation of the mixed-terminated (10-10) surface by first examining the conditions under which methanol monolayers can form on this crystal face and by then exploring all possible pathways for its adsorption, diffusion, and initial dehydrogenation. This study provides a comprehensive picture to identify the most probable reaction steps that can be used to interpret experimental findings and will help future theoretical studies for reactions similar to dehydrogenation of organic molecules and monolayer-formation kinetics that were studied here.

The wetting behavior of water on methacrylate copolymer films was studied on anodically oxidized and micro-roughened aluminium surfaces and also on smooth model surfaces. The copolymerization of tert-butyl methacrylate with a methacrylate containing a fluoroorganic side chain led to a considerable decrease of the surface free energy, but not to a superhydrophobic behavior of polymer-coated, micro-roughened aluminium surfaces. However, copolymers containing both hydrophobic and hydrophilic sequences are able to form superhydrophobic films. X-ray photoelectron spectroscopy showed that an enrichment of the interface between the solid phase and the air by fluorine-containing polymer components was the reason for the strong decrease of the surface free energy. The hydrophilic segments of the copolymers improved the ability to wet the highly polar aluminium surface and to form films of higher density.

Über die besonders hohe Effizienz von Halid-Perowskit (HaP)-basierten optoelektronischen Bauteilen wurde bereits in der Literatur berichtet. Um die Entwicklung dieser Bauteile voranzutreiben, ist ein umfassendes und verlässliches Verständnis derer elektronischen Struktur, sowie der Energielevelanordnung (ELA) an HaP Grenzflächen von größter Bedeutung. Demzufolge beschäftigt sich die vorliegende Arbeit mit der Untersuchung i) der Bandstruktur von Perowskit-Einkristallen, um ein solides Fundament für die Darlegung der elektronischen Eigenschaften von polykristallinen Dünnschichten zu erarbeiten, und mit ii) den Einflüssen von Oberflächenzuständen auf die elektronische Struktur der Oberfläche, sowie deren Rolle bei der Kontrolle von ELA an HaP Grenzflächen. Die Charakterisierung erfolgt überwiegend mithilfe von Photoelektronenspektroskopie (PES) und ergänzenden Messmethoden wie Beugung niederenergetischer Elektronen an Oberflächen, UV-VIS-Spektroskopie, Rasterkraftmikroskopie und Kelvin-Sonde. Erstens weist die Banddispersion von zwei prototypischen Perowskit-Einkristallen eine starke Dispersion des jeweiligen oberen Valenzbandes (VB) auf, dessen globales Maximum in beiden Fällen am R-Punkt in der Brillouin-Zone liegt. Dabei wird eine effektive Lochmasse von 0.25 m0 für CH3NH3PbBr3, bzw. von ~0.50 m0 für CH3NH3PbI3 bestimmt. Basierend auf diesen Ergebnissen werden die elektronischen Spektren von polykristallinen Dünnschichten konstruiert und es wird dadurch aufgezeigt, dass eine Bestimmung der Valenzbandkantenposition ausgehend von einer logarithmischen Intensitätsskala aufgrund von geringer Zustandsdichte am VB Maximum vorzuziehen ist. Zweitens stellt sich bei der Untersuchung der elektronischen Struktur von frisch präparierten Perowskit-Oberflächen heraus, dass die n-Typ Eigenschaft eine Folge der Bandverbiegung ist, welche durch donatorartige Oberflächenzustände hervorgerufen wird. Des Weiteren weisen die PES-Messungen an Perowskiten mit unterschiedlichen Zusammensetzungen aufgrund von Oberflächenphotospannung eine Anregungslichtintensitätsabhängigkeit der Energieniveaus von bis zu 0.7 eV auf. Darüber hinaus wird die Kontrolle von ELA durch gezielte Variation der Oberflächenzustandsdichte gezeigt, wodurch sich unterschiedliche ELA-Lagen (mit Abweichungen von über 0.5 eV) an den Grenzflächen mit organischen Akzeptormolekülen erklären lassen. Die vorliegenden Ergebnisse verhelfen dazu, die starke Abweichung der in der Literatur berichteten Energieniveaus zu erklären und somit ein verfeinertes Verständnis des Funktionsprinzips von perowskit-basierten Bauteilen zu erlangen. / Optoelectronic devices based on halide perovskites (HaPs) and possessing remarkably high performance have been reported. To push the development of such devices even further, a comprehensive and reliable understanding of their electronic structure, including the energy level alignment (ELA) at HaPs interfaces, is essential but presently not available. In an attempt to get a deep insight into the electronic properties of HaPs and the related interfaces, the work presented in this thesis investigates i) the fundamental band structure of perovskite single crystals, in order to establish solid foundations for a better understanding the electronic properties of polycrystalline thin films and ii) the effects of surface states on the surface electronic structure and their role in controlling the ELA at HaPs interfaces. The characterization is mostly performed using photoelectron spectroscopy, together with complementary techniques including low-energy electron diffraction, UV-vis absorption spectroscopy, atomic force microscopy and Kelvin probe measurements. Firstly, the band structure of two prototypical perovskite single crystals is unraveled, featuring widely dispersing top valence bands (VB) with the global valence band maximum at R point of the Brillouin zone. The hole effective masses there are determined to be ~0.25 m0 for CH3NH3PbBr3 and ~0.50 m0 for CH3NH3PbI3. Based on these results, the energy distribution curves of polycrystalline thin films are constructed, revealing the fact that using a logarithmic intensity scale to determine the VB onset is preferable due to the low density of states at the VB maximum. Secondly, investigations on the surface electronic structure of pristine perovskite surfaces conclude that the n-type behavior is a result of surface band bending due to the presence of donor-type surface states. Furthermore, due to surface photovoltage effect, photoemission measurements on different perovskite compositions exhibit excitation-intensity dependent energy levels with a shift of up to 0.7 eV. Eventually, control over the ELA by manipulating the density of surface states is demonstrated, from which very different ELA situations (variation over 0.5 eV) at interfaces with organic electron acceptor molecules are rationalized. Our findings further help to explain the rather dissimilar reported energy levels at perovskite surfaces and interfaces, refining our understanding of the operational principles in perovskite related devices.

The deposition of boron oxide (B₂O₃) films on silicon substrates is of significant interest in microelectronics for ultrashallow doping applications. However, thickness control and conformality of such films has been an issue in high aspect ratio 3D structures which have long replaced traditional planar transistor architectures. B₂O₃ films are also unstable in atmosphere, requiring a suitable capping barrier for passivation. The growth of continuous, stoichiometric B₂O₃ and boron nitride (BN) films has been demonstrated in this dissertation using Atomic Layer Deposition (ALD) and enhanced ALD methods for doping and capping applications. Low temperature ALD of B₂O₃ was achieved using BCl₃/H₂O precursors at 300 K. In situ x-ray photoelectron spectroscopy (XPS) was used to assess the purity and stoichiometry of deposited films with a high reported growth rate of ~2.5 Å/cycle. Free-radical assisted ALD of B₂O₃ was also demonstrated using non-corrosive trimethyl borate (TMB) precursor, in conjunction with mixed O₂/O-radical effluent, at 300 K. The influence of O₂/O flux on TMB-saturated Si surface was investigated using in situ XPS, residual gas analysis mass spectrometer (RGA-MS) and ab initio molecular dynamics simulations (AIMD). Both low and high flux regimes were studied in order to understand the trade-off between ligand removal and B₂O₃ growth rate. Optimization of precursor flux was discovered to be imperative in plasma and radical-assisted ALD processes. BN was investigated as a novel capping barrier for B₂O₃ and B-Si-oxide films. A BN capping layer, deposited using BCl₃/NH₃ ALD at 600 K, demonstrated excellent stoichiometry and consistent growth rate (1.4 Å/cycle) on both films. Approximately 13 Å of BN was sufficient to protect ~13 Å of B₂O₃ and ~5 Å of B-Si-oxide from atmospheric moisture and prevent volatile boric acid formation. BN/B₂O₃/Si heterostructures are also stable at high temperatures (>1000 K) commonly used for dopant drive-in and activation. BN shows great promise in preventing upward boron diffusion which causes a loss in the dopant dose concentration in Si. The capping effects of BN were extended to electrochemical battery applications. ALD of BN was achieved on solid Li-garnet electrolytes using halide-free tris(dimethylamino)borane precursor, in conjunction with NH₃ at 723 K. Approximately 3 nm of BN cap successfully inhibited Li₂CO₃ formation, which is detrimental to Li-based electrolytes. BN capped Li-garnets demonstrated ambient stability for at least 2 months of storage in air as determined by XPS. BN also played a crucial role in stabilizing Li anode/electrolyte interface, which drastically reduced interfacial resistance to 18 Ω.cm², improved critical current density and demonstrated excellent capacitance retention of 98% over 100 cycles. This work established that ALD is key to achieving conformal growth of BN as a requirement for Li dendrite suppression, which in turn influences battery life and performance.

This talk was presented in the 14th International Conference on Atomic Layer Deposition (ALD 2014) in Kyoto, Japan on 18th June 2014. Abstract Atomic Layer Deposition (ALD) is emerging as a ubiquitous method for the deposition of conformal and homogeneous ultra-thin films on complex topographies and large substrates in microelectronics. Electrochemical deposition (ECD) is the first choice for the deposition of copper (Cu) into the trenches and vias of the interconnect system for ULSI circuits. The ECD of Cu necessitates an electrically conductive seed layer for filling the interconnect structures. ALD is now considered as a solution for conformal deposition of Cu seed layers on very high aspect ratio (AR) structures also for technology nodes below 20 nm, since physical vapor deposition is not applicable for structures with high AR. Cu seed layer deposition by the reduction of Cu2O, which has been deposited from the Cu(I) β-diketonate [(nBu3P)2Cu(acac)] (1) used as Cu precursor, has been successfully carried out on different substrates like Ta, TaN, SiO2, and Ru [1, 2]. It was found that the subsequent gas-phase reduction of the Cu2O films can be aided by introducing catalytic amounts of a Ru precursor into the Cu precursor, so that metallic copper films could potentially obtained also on non-catalytic substrates [3, 4]. In this work, in situ X-ray photoelectron spectroscopy (XPS) investigation of the surface chemistry during Cu2O ALD from the mixture of 99 mol % of 1 and 1 mol % of [Ru(η5 C5H4SiMe3)(η5-C7H11)] (2) as ruthenium precursor, and the reduction of Cu2O to metallic Cu by formic acid carried out on SiO2 substrate are demonstrated. Oxidation states of the Cu in the film are identified by comparing the Cu Auger parameter (α) [5] with literature data. α calculated after ALD equals 362.2 eV and after reduction equals 363.8 eV, comparable to the Cu2O and metallic Cu in thin-films [6] respectively. In addition, <10 % of Cu(I), Cu(II), and Cu(OH)2 species are identified from the Cu 2p3/2 and Cu L3VV Auger spectrum after reduction. Consequently, the ALD Cu2O is successfully reduced to metallic copper by in-situ thermal reduction using formic acid. [1] T. Waechtler et al., J. Electrochem. Soc., 156 (6), H453 (2009). [2] T. Waechtler et al., Microelectron. Eng., 88, 684 (2011). [3] S. Mueller et al., Conference Proceedings SCD 2011, Semiconductor Conference Dresden, pp. 1-4. [4] T. Waechtler et al., US Patent Application Publication, US 2013/0062768. [5] C. D. Wagner, Faraday Discuss. Chem. Soc., 60, 291 (1975). [6] J. P. Espinós et al., J. Phys. Chem. B, 106, 6921 (2002).

A coupling-limited approach for the Ullmann reaction-like on-surface synthesis of a two-dimensional covalent organic network starting from a halogenated metallo-porphyrin is demonstrated. Copper-octabromo-tetraphenylporphyrin molecules can diffuse and self-assemble when adsorbed on the inert Au(111) surface. Splitting-off of bromine atoms bonded at the macrocyclic core of the porphyrin starts at room temperature after the deposition and is monitored by X-ray photoelectron spectroscopy for different annealing steps. Direct coupling between the reactive carbon sites of the molecules is, however, hindered by the molecular shape. This leads initially to an ordered non-covalently interconnected supramolecular structure. Further heating to 300 °C and an additional hydrogen dissociation step is required to link the molecular macrocycles via a phenyl group and form large ordered polymeric networks. This approach leads to a close-packed covalently bonded network of overall good quality. The structures are characterized using scanning tunneling microscopy. Different kinds of lattice defects and, furthermore, the impact of polymerization on the HOMO–LUMO gap are discussed. Density functional theory calculations corroborate the interpretations and give further insight into the adsorption of the debrominated molecule on the surface and the geometry and coupling reaction of the polymeric structure. / Dieser Beitrag ist aufgrund einer (DFG-geförderten) Allianz- bzw. Nationallizenz frei zugänglich.

Surface chemistry plays a key role in science and technology because materials interact with their environments through their surfaces. Understanding surface chemistry can help alter/improve the properties of materials. However, surface characterization and modification often require multiple characterization and synthesis techniques. Silicon/silica-based materials are technologically important, so studying their surface properties can enable future advancements. In this dissertation, I explore surface modification and characterization of different types of Si/SiO2 thin films, including silicon wafers, fused silica capillary columns, and oblique angle sputtered Si/SiO2 thin films. In Chapters 2-5, I first present a method to rapidly silanize silica surfaces using a gas-phase synthesis that employs a small aminosilane that passivates/deactivates silicon wafers and the inner surfaces of capillary columns. This deposition takes place in a flow-through, atmospheric pressure, gas-phase reactor. This surface modification results in a significant decrease in the number of free surface silanols, which was confirmed by high-sensitivity low energy ion scattering (HS-LEIS), X-ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometry (SE). I then show that this silanization inhibits atomic layer deposition (ALD) of zinc oxide (ZnO), which is an important optical thin film material. Finally, I performed in-depth characterization of thin films of oblique angle deposited porous Si/SiO2. These films have been used as the active coatings in solid phase microextraction (SPME) devices. The characterization and analysis in this study were mainly by scanning transmission electron microscopy (STEM) and various computational microstructural characterization techniques, e.g., two-point statistics. The rest of my dissertation focuses on XPS data analysis and interpretation. I first show box plots as a simple graphical tool for determining overfitting in XPS peak fitting. I next present a series of chemometrics/informatics analyses of an XPS image dataset from a patterned silicon surface with different oxide thicknesses. This dataset was probed via an initial, graphical analysis of the data, summary statistics with a focus on pattern recognition entropy (PRE), principal component analysis (PCA), multivariate curve resolution (MCR), and cluster analysis (CA).

Progress in chemomechanical functionalization was made by investigating the binding of molecules and surface coverage on the silicon surface, demonstrating functionalization of silicon with gases by chemomechanical means, analyzing atomic force microscopy probe tip wear in atomic force microscopy (AFM) chemomechanical nanografting, combining chemomechanical functionalization and nanografting to pattern silicon with an atomic force microscope, and extending chemomechanical nanografting to silicon dioxide. Molecular mechanics of alkenes and alkynes bound to Si(001)-2x1 as a model of chemomechanically functionalized surfaces indicated that complete coverage is energetically favorable and becomes more favorable for longer chain species. Scribing a silicon surface in the presence of ethylene and acetylene demonstrated chemomechanical functionalization with gaseous reagents, which simplifies sample cleanup and adds a range of reagents to those possible for chemomechanical functionalization. Thermal desorption spectroscopy was performed on chemomechanically functionalized samples and demonstrated the similarity in binding of molecules to the scribed silicon surface and to the common Si(001)-2x1 and Si(111)-7x7 surfaces. The wearing of atomic force microscope probe tips during chemomechanical functionalization was investigated by correlating change over time and force with widths of created lines to illustrate the detrimental effect of tip wear on mechanically-driven nanopatterning methods. In order to have a starting surface more stable than hydrogen-terminated silicon, silicon reacted with 1-octene was used as a starting surface for AFM chemomechanical functionalization, producing chemomechanical nanografting. Chemomechanical nanografting was then demonstrated on silicon dioxide using silane molecules; the initial passivating layer reduced the tip friction on the surface to allow only partial nanografting of the silane molecules. These studies broadened the scope and understanding of chemomechanical functionalization and nanografting.

Obwohl wir sie oft nicht bewusst wahrnehmen, sind Nanopartikel heutzutage in den meisten Bereichen unseres Alltags präsent, unter anderem in Lebensmitteln und ihren Verpackungen, Medizin, Medikamenten, Kosmetik, Pigmenten und in elektronischen Geräten wie Computermonitoren. Ein Großteil dieser Partikel weist, beabsichtigt oder unbeabsichtigt, eine Kern-Schale Morphologie auf. Einfachheitshalber wird diese Morphologie eines Kern-Schale-Nanopartikels (CSNP) oft als ideal angenommen, d.h. als ein sphärischer Kern, der komplett von einer Schale homogener Dicke bedeckt ist, mit einer scharfen Grenzfläche zwischen Kern- und Schalenmaterial. Außerdem wird vielfach auch davon ausgegangen, alle Partikel der Probe hätten gleiche Schalendicken. Tatsächlich weichen die meisten realen CSNPs in verschiedenster Weise von diesem Idealmodell ab, mit oft drastischen Auswirkungen darauf, wie gut sie ihre Aufgabe in einer bestimmten Anwendung erfüllen. Das Thema dieser kumulativen Doktorarbeit ist die exakte Charakterisierung der wirklichen Morphologie von CSNPs mit modernen Röntgen-basierten Methoden, konkret Röntgen-Photoelektronen-Spektroskopie (XPS) und Raster-Transmissions-Röntgen-Mikroskopie (STXM). Der Fokus liegt insbesondere auf CSNPs, die von einer idealen Kern-Schale-Morphologie abweichen. Aufgrund der enormen Vielfalt an CSNPs, die sich in Material, Zusammensetzung und Form unterscheiden, kann eine Messmethode nicht völlig unverändert von einer Probe auf eine andere übertragen werden. Nichtsdestotrotz, da die als Teil dieser Doktorarbeit präsentierten Artikel eine deutlich ausführlichere Beschreibung der Experimente enthalten als vergleichbare Publikationen, stellen sie eine wichtige Anleitung für andere Wissenschaftler dafür dar, wie aussagekräftige Informationen über CSNPs durch Oberflächenanalytik erhalten werden können. / Even though we often do not knowingly recognize them, nanoparticles are present these days in most areas of our daily life, including food and its packaging, medicine, pharmaceuticals, cosmetics, pigments as well as electronic products, such as computer screens. The majority of these particles exhibits a core-shell morphology either intendedly or unintendedly. For the purpose of practicability, this core-shell nanoparticle (CSNP) morphology is often assumed to be ideal, namely a spherical core fully encapsulated by a shell of homogeneous thickness with a sharp interface between core and shell material. It is furthermore widely presumed that all nanoparticles in the sample possess the same shell thickness. As a matter of fact, most real CSNPs deviate in several ways from this ideal model with quite often severe impact on how efficiently they perform in a specific application. The topic of this cumulative PhD thesis is the accurate characterization of the actual morphology of CSNPs by advanced X-ray analytical techniques, namely X-ray photoelectron spectroscopy (XPS) and scanning transmission X-ray microscopy (STXM). A special focus is on CSNPs which deviate from an ideal core-shell morphology. Due to the vast diversity of nanoparticles differing in material, composition and shape, a measurement procedure cannot unalteredly be transferred from one sample to another. Nevertheless, because the articles in this thesis present a greater depth of reporting on the experiments than comparable publications, they constitute an important guidance for other scientists on how to obtain meaningful information about CSNPs from surface analysis.