O transistor de efeito de campo de porta estendida e separada (SEGFET) é um dispositivo alternativo ao tradicional transistor de efeito de campo seletivo a íons (ISFET). A grande vantagem desse dispositivo se refere ao seu fácil processamento, ou seja, se restringe somente a manipulação do eletrodo de porta, evitando processos convencionais de microeletrônica. Neste sentido, sensores iônicos e biossensores podem ser facilmente implementados combinando materiais de reconhecimento químico e/ou biológico. Por sua vez, a técnica de fabricação de filmes finos camada por camada (layer-by-layer, LbL) se mostra versátil para manipulação de diversos tipos de materiais em nível molecular. Materiais orgânicos e inorgânicos podem ser automontados em substratos sólidos por meio da simples adsorção eletrostática formando compósitos com propriedades únicas com o objetivo de serem aplicados em sensores ou biossensores. Neste trabalho, o conceito de dispositivo SEGFET foi combinado com a técnica LbL por meio da manipulação de materiais orgânicos (polieletrólitos, dendrímeros e polianilina) e inorgânicos (TiO2 e V2O5) nanoparticulados a fim de se obter novos sensores de pH e biossensores para a detecção de glicose e uréia, dois importantes analitos de interesse clínico. Numa primeira etapa, diferentes filmes LbL foram produzidos, caracterizados e testados como camada sensível (porta estendida) em dispositivos SEGFETs. Todos os sistemas estudados se mostraram promissores como sensores de pH, ou seja, com uma sensibilidade próxima do valor teórico sugerido pela equação de Nernst (59,15 mV.pH-1). Esses resultados podem ser atribuídos à natureza anfotérica do material da última camada no filme LbL. Numa segunda etapa, as enzima glicose oxidase (GOx) e urease foram convenientemente imobilizadas nos filmes LbL. Pelo fato dessas enzimas gerarem ou consumirem prótons durante a catálise da reação, os filmes LbL modificados enzimaticamente foram utilizados em biossensores de glicose e uréia, apresentando eficiente detecção. Assim, a união de dispositivos SEGFET com a técnica de automontagem se mostrou promissora para construção de sensores e biossensores eficientes e de baixo custo. / Separative extended gate field-effect transistor (SEGFET) device is an alternative to the conventional ion-sensitive field-effect transistor (ISFET). The great advantage of SEGFET refers to its easy processing, i.e., it is limited under only manipulation of the gate electrode, avoiding the conventional microelectronic processes. In this way, ion sensors and biosensors can be easily implemented combining chemical and/or biological recognition materials. In turn, the layer-by-layer (LbL) technique shows be versatile for handling various types of materials at molecular level. In this thesis, the concept of SEGFET device was combined with the LbL technique through the manipulation of organic (polyelectrolytes, dendrimers and poly (aniline)) and inorganic materials (TiO2 and V2O5 nanoparticles) in order to get new pH sensors and biosensors for the detection of glucose and urea, two important analytes of clinical interest. In a first step, different LbL films were produced, characterized and tested as the sensitive layer (extended gate) in SEGFETs devices. All studied systems were promissing as pH sensors, i.e., with a sensitivity close to the theoretical value suggested by Nernst equation (59.15 mV.pH-1). These results can be attributed to the amphoteric nature of the material in the last layer of the LbL films. In a second step, glucose oxidase (GOx) and urease enzymes were conveniently immobilized onto LbL films. Because these enzymes generate or consume protons during catalysis of the reaction, the enzymatically modified LbL films were used in biosensors for glucose and urea, with efficient detection. Thus, the union of SEGFET devices with the LbL technique is promising to building up efficient and low-cost sensors and biosensors.

"Circulating tumor cells (CTCs) are cells released into the bloodstream from primary tumors and are suspected to be one of the main causes behind metastatic spreading of cancer. The ability to capture and analyze circulating tumor cells in clinical samples is of great interest in prevailing patient prognosis and clinical management of cancer. Carbon nanotubes, individual rolled-up graphene sheets, have emerged as exciting materials for probing the biomolecular interactions. With diameter of about 1 nm, they can attach themselves to cell surface receptors through specific antibodies and hold a great potential for diagnostic cellular profiling. Carbon nanotubes can be either semiconducting or metallic, and the electronic properties of either type rivals the best known materials. Small size of nanotubes and the ability to functionalize their surface using 1-Pyrenebutanoic Acid, Succinimidyl Ester (PASE), enables a versatile probe for developing a platform for capture and analysis of cancer biomarkers and circulating tumor cells. Although nanotubes have previously been used to electrically detect a variety of molecules and proteins, here for the first time we demonstrate the label free capture of spiked breast cancer cells using ultra-thin carbon nanotube film micro-array devices in a drop of buffy coat and blood. A new statistical approach of using Dynamic Time Warping (DTW) was used to classify the electrical signatures with 90% sensitivity and 90% specificity in blood. These results suggest such label free devices could potentially be useful for clinical capture and further analysis of circulating tumor cells. This thesis will go in-depth the properties of carbon nanotubes, device fabrication and characterization methodologies, functionalization protocols, and experiments in buffy coats and in blood. Combination of nano and biological materials, functionalization protocols and advanced statistical classifiers can potentially enable clinical translation of such devices in the future. "

The growing applications for IoT devices have caused an increase in the study of low power consuming circuit design to meet the requirement of devices to operate for various months without external power supply. Scaling down the conventional CMOS causes various complications to design due to CMOS properties, therefore various non-conventional CMOS design techniques are being proposed that overcome the limitations. This thesis focuses on some of those emerging and novel low power design technique namely Adiabatic logic and low power devices like Magnetic Tunnel Junction (MTJ) and Carbon Nanotube Field Effect transistor (CNFET). Circuits that are used for large computations (multipliers, encryption engines) that amount to maximum part of power consumption in a whole chip are designed using these novel low power techniques.

Le développement des transistors organiques, ces dernières années, a permis une nette amélioration de leurs performances et de leur stabilité. Ceci a été possible, notamment, grâce à une meilleure compréhension des mécanismes régissant le transport de charges dans ces dispositifs. Cependant, certains phénomènes restent encore à éclaircir, en particulier au niveau de l’interface entre le semi-conducteur et le diélectrique. Le piégeage des porteurs de charges qui est une des principales causes de perturbations du transport de charges dans les transistors organiques, en est un. Cette thèse se propose donc, d’étudier ce phénomène dans des transistors à base de pentacène.Les groupements polaires, et plus particulièrement les groupements hydroxyles, présents à l’interface entre l’isolant et le semi-conducteur, sont les principaux responsables du piégeage des porteurs de charges dans les transistors organiques. Afin de limiter leur présence, une technologie basée sur l’emploi d’une couche interfaciale diélectrique passivante, pauvre en groupements hydroxyles, à base de fluorure de calcium, a été mise en place. L’influence de cette couche sur le comportement de transistors à base de pentacène a été étudiée, de même que le vieillissement de ces dispositifs sous différentes conditions de stockage (sous vide et à l’air) et sous contrainte électrique.Ainsi, il a été mis en évidence qu’une couche de fluorure de calcium d’une épaisseur trop importante (de l’ordre de 5 nm) modifie la morphologie de la couche de pentacène, ce qui se traduit par une quasi-disparition du transport de charges dans le pentacène en configuration de transistor à effet de champ. Les études de vieillissement ont montré que sous l’effet de la couche interfaciale de CaF2, même d’une très fine épaisseur (de quelques nanomètres), une quantité plus importante d’humidité est présente dans la couche de pentacène, probablement à cause de la nature hygroscopique du fluorure de calcium. / These recent years, Organic Field-Effect Transistor (OFET) development has significantly improved it performances and it stability. This was made possible, through a better understanding of the mechanisms governing charge transport in these devices. However, some phenomena remain unclear, in particular, at the interface between the semiconductor and the dielectric. Charge carrier trapping which is one of the main causes of charge transport disturbance in organic transistors, is one of them. So, this work aims to investigate such phenomena in pentacene-based transistors.Polar groups and particularly, hydroxyl groups, located at the insulator-semiconductor interface, are the main sources of charge carriers trapping in OFET. To prevent their presence, an OFET fabrication technology based on a passivating dielectric, poor of hydroxyl groups, calcium fluoride-based interfacial layer has been developed. Effect of this layer on pentacene-based transistors operation has been studied, as well as these devices aging under different storage atmosphere (in vacuum and in air) and under electrical stress.Thus, it has been highlighted that an interfacial layer of calcium fluoride with a too high thickness (around 5 nm) changes pentacene layer morphology which results in a quasi-disappearance of charge transport in pentacene in OFET configuration. Aging studies showed that under the effect of CaF2 interfacial layer, even with a very thin thickness (a few nanometers), a greater quantity of moisture is induced in pentacene layer probably due to the hygroscopic nature of calcium fluoride.

The temperature dependent electrical characteristics of silicon carbide power transistors – 4H-SiC metal semiconductor field-effect transistors (MESFETs) and 4H-SiC bipolar junction transistors (BJTs) have been investigated through simulation and experimental approaches. Junction temperatures and temperature distributions in devices under large power densities have been estimated. The DC and RF performance of 4H-SiC RF Power MESFETs have been studied through two-dimensional electro-thermal simulations using commercial software MEDICI and ISE. The simulated characteristics of the transistors were compared with the measurement results. Performance degradation of transistors under self-heating and high operating temperatures have been analyzed in terms of gate and drain characteristics, power density, high frequency current gain and power gain. 3D thermal simulations have been performed for single and multi-finger MESFETs and the simulated junction temperatures and temperature profiles were compared with the results from electro-thermal simulations. The reduction in drain current caused by self-heating was found to be more prominent for transistors with more fingers and it imposes a limitation on both the output power and the power density (in W/mm) of multi-fingered large area devices. Thermal issues for design of high power multi-fingered SiC MESFETs were also investigated. A couple of useful ways to reduce the self-heating effects were discussed. Trap-induced performance instabilities of the devices were analyzed by carrying out DC, transient, and pulse measurements at room and elevated temperatures. Electrical characteristics of 4H-SiC BJTs have been measured. A reduction in current gain at elevated temperatures was observed. Based on the collector current-voltage diagram measured at three different ambient temperatures the junction temperature was extracted using the assumption that the current gain only depends on the temperature. Temperature measurements have been carried out for SiC BJTs. Thermal images of a device under operation were recorded using an infrared camera. 3D thermal simulations were conducted using FEMLAB. Both the simulations and the measurement showed a significant temperature increase in the vicinity of the device when operated at high power densities, thus causing the decrease of the DC current gain. The junction temperatures obtained from the thermal imaging, simulation and extraction agree well.

Label-free detection of DNA has been successfully demonstrated on field effect transistor (FET) based devices. Since conducting organic materials was discovered and have attracted more and more research efforts by their profound advantages, this work will focus on utilizing an organic field effect transistor (OFET) as DNA sensor. An OFET constructed with a transporting fluidic channel, WetOFET, forms a fluid-polymer (active layer) interface where the probe DNA can be introduced. DNA hybridization and non-hybridization after injecting target DNA and non-target DNA were monitored by transistor characteristics. The Hysteresis area of transfer curve increased after DNA hybridization which may be caused by the increasing electrostatic screening induced by the increasing negative charge from target DNA. The different morphology of coating surface could also influence the OFET response.

<p>The temperature dependent electrical characteristics of silicon carbide power transistors – 4H-SiC metal semiconductor field-effect transistors (MESFETs) and 4H-SiC bipolar junction transistors (BJTs) have been investigated through simulation and experimental approaches. Junction temperatures and temperature distributions in devices under large power densities have been estimated. </p><p>The DC and RF performance of 4H-SiC RF Power MESFETs have been studied through two-dimensional electro-thermal simulations using commercial software MEDICI and ISE. The simulated characteristics of the transistors were compared with the measurement results. Performance degradation of transistors under self-heating and high operating temperatures have been analyzed in terms of gate and drain characteristics, power density, high frequency current gain and power gain. 3D thermal simulations have been performed for single and multi-finger MESFETs and the simulated junction temperatures and temperature profiles were compared with the results from electro-thermal simulations. The reduction in drain current caused by self-heating was found to be more prominent for transistors with more fingers and it imposes a limitation on both the output power and the power density (in W/mm) of multi-fingered large area devices. Thermal issues for design of high power multi-fingered SiC MESFETs were also investigated. A couple of useful ways to reduce the self-heating effects were discussed. Trap-induced performance instabilities of the devices were analyzed by carrying out DC, transient, and pulse measurements at room and elevated temperatures. </p><p>Electrical characteristics of 4H-SiC BJTs have been measured. A reduction in current gain at elevated temperatures was observed. Based on the collector current-voltage diagram measured at three different ambient temperatures the junction temperature was extracted using the assumption that the current gain only depends on the temperature. Temperature measurements have been carried out for SiC BJTs. Thermal images of a device under operation were recorded using an infrared camera. 3D thermal simulations were conducted using FEMLAB. Both the simulations and the measurement showed a significant temperature increase in the vicinity of the device when operated at high power densities, thus causing the decrease of the DC current gain. The junction temperatures obtained from the thermal imaging, simulation and extraction agree well. </p>

<p>Label-free detection of DNA has been successfully demonstrated on field effect transistor (FET) based devices. Since conducting organic materials was discovered and have attracted more and more research efforts by their profound advantages, this work will focus on utilizing an organic field effect transistor (OFET) as DNA sensor.</p><p>An OFET constructed with a transporting fluidic channel, WetOFET, forms a fluid-polymer (active layer) interface where the probe DNA can be introduced. DNA hybridization and non-hybridization after injecting target DNA and non-target DNA were monitored by transistor characteristics. The Hysteresis area of transfer curve increased after DNA hybridization which may be caused by the increasing electrostatic screening induced by the increasing negative charge from target DNA. The different morphology of coating surface could also influence the OFET response.</p>

No description available.

A long-term goal within the field of organic electronics has been to developflexible and functional devices, which can be processed and patterned withlow-cost and energy-efficient solution-based methods. This thesis presents anumber of functional paths towards the attainment of this goal via thedevelopment and demonstration of novel fabrication and patterningmethods involving the important organic-semiconductor family termedfullerenes.Fullerenes are soccer-shaped small molecules, with two often-employedexamples being the symmetric C60 molecule and its more soluble derivative[6,6]-phenyl-C61-butyric acid methyl ester (PCBM). We show that PCBM canbe photochemically transformed into a dimeric state in a bi-excited reactionprocess, and that the exposed material features a significantly reducedsolubility in common solvents as well as an effectively retained electronmobility. This attractive combination of material properties allows for adirect and resist-free lithographic patterning of electronic PCBM films downto a smallest feature size of 1 µm, using a simple and scalable two-stepprocess constituting light exposure and solution development. In a furtherdevelopment, it was shown that the two-step method was useful also in thearea-selective transformation of fullerene/conjugated-polymer blend films,as demonstrated through the realization of a functional complementary logiccircuit comprising a 5-stage ring oscillator.In another project, we have synthesized highly flexible, single-crystal C60nanorods with a solution-based self-assembly process termed liquid-liquidinterfacial precipitation. The 1-dimensional nanorods can be deposited fromtheir synthesis solution and employed as the active material in field-effecttransistor devices. Here, it was revealed that the as-fabricated nanorods canfeature an impressive electron mobility of 1.0 cm2 V-1 s-1, which is on par withthe performance of a work horse in the transistor field, viz. vacuumdeposited amorphous Si. We further demonstrated that the processability ofthe nanorods can be improved by a tuned light-exposure treatment, duringwhich the nanorod shell is polymerized while the high-mobility interior bulkis left intact. This has the desired consequence that stabile nanoroddispersions can be prepared in a wide range of solvents, and we anticipatethat functional electronic devices based on solution-processable nanorodscan be realized in a near future.