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Thermal Conductivity and Mechanical Properties of Interlayer-Bonded Graphene BilayersMostafa, Afnan 14 November 2023 (has links) (PDF)
Graphene, an allotrope of carbon, has demonstrated exceptional mechanical, thermal, electronic, and optical properties. Complementary to such innate properties, structural modification through chemical functionalization or defect engineering can significantly enhance the properties and functionality of graphene and its derivatives. Hence, understanding structure-property relationships in graphene-based metamaterials has garnered much attention in recent years. In this thesis, we present molecular dynamics studies aimed at elucidating structure-property relationships that govern the thermomechanical response of interlayer-bonded graphene bilayers.
First, we present a systematic and thorough analysis of thermal transport in interlayer-bonded twisted bilayer graphene (IB-TBG). We find that the introduction of interlayer C-C bonds in these bilayer structures causes an abrupt drop in the in-plane thermal conductivity of pristine, non-interlayer-bonded bilayer graphene, while further increase in the interlayer C-C bond density (2D diamond fraction) leads to a monotonic increase in the in-plane thermal conductivity of the resulting superstructures approaching the high in-plane thermal conductivity of 2D diamond (diamane). We also find a similar trend in the in-plane thermal conductivity of interlayer-bonded graphene bilayers with randomly distributed individual interlayer C-C bonds (RD-IBGs) as a function of interlayer C-C bond density, but with the in-plane thermal conductivity of the IB-TBG 2D diamond superstructures consistently exceeding that of RD-IBGs at a given interlayer bond density. We analyze the simulation results employing effective medium and percolation theories and explain the predicted dependence of in-plane thermal conductivity on interlayer bond density on the basis of lattice distortions induced in the bilayer structures as a result of interlayer bonding. Our findings demonstrate that the in-plane thermal conductivity of IB-TBG 2D diamond superstructures and RD-IBGs can be precisely tuned by controlling interlayer C-C bond density with important implications for the thermal management applications of interlayer-bonded few-layer graphene derivatives.
Secondly, we report results on the mechanical and structural response to shear deformation of nanodiamond superstructures in interlayer-bonded twisted bilayer graphene (IB-TBG) and interlayer-bonded graphene bilayers with randomly distributed individual interlayer C-C bonds (RD-IBGs). We find that IB-TBG nanodiamond superstructures subjected to shear deformation undergo a brittle-to-ductile transition (BDT) with increasing interlayer bond density (nanodiamond fraction). However, RD-IBG bilayer sheets upon shear deformation consistently undergo brittle failure without exhibiting a BDT. We identify, explain, and characterize in atomic-level detail the different failure mechanisms of the above bilayer structures. We also report the dependence of the mechanical properties, such as shear strength, crack initiation strain, toughness, and shear modulus, of these graphene bilayer sheets on their interlayer bond density and find that these properties differ significantly between IB-TBG nanodiamond superstructures and RD-IBG sheets. Our findings show that the mechanical properties of interlayer-bonded bilayer graphene sheets, including their ductility and the type of failure they undergo under shear deformation, can be systematically tailored by controlling interlayer bond density and distribution. These findings contribute significantly to our understanding of these 2D graphene-based materials as mechanical metamaterials.
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Nonlinear optical interactions in focused beams and nanosized structuresAmber, Zeeshan H., Spychala, Kai J., Eng, Lukas M., Rüsing, Michael 02 February 2024 (has links)
Thin-film materials from μm thickness down to single-atomic-layered 2D materials play a central role in many novel electronic and optical applications. Coherent, nonlinear optical (NLO) μ-spectroscopy offers insight into the local thickness, stacking order, symmetry, or electronic and vibrational properties. Thin films and 2D materials are usually supported on multi-layered substrates leading to (multi-) reflections, interference, or phase jumps at interfaces during μ-spectroscopy, which all can make the interpretation of experiments particularly challenging. The disentanglement of the influence parameters can be achieved via rigorous theoretical analysis. In this work, we compare two self-developed modeling approaches, a semi-analytical and a fully vectorial model, to experiments carried out in thin-film geometry for two archetypal NLO processes, second-harmonic and third-harmonic generation. In particular, we demonstrate that thin-film interference and phase matching do heavily influence the signal strength. Furthermore, we work out key differences between three and four photon processes, such as the role of the Gouy-phase shift and the focal position. Last, we can show that a relatively simple semi-analytical model, despite its limitations, is able to accurately describe experiments at a significantly lower computational cost as compared to a full vectorial modeling. This study lays the groundwork for performing quantitative NLO μ-spectroscopy on thin films and 2D materials, as it identifies and quantifies the impact of the corresponding sample and setup parameters on the NLO signal, in order to distinguish them from genuine material properties.
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Memristors for Neuromorphic LogicPetropoulos, Dimitrios Petros January 2022 (has links)
Novel devices are being investigated as artificial synapse candidates for neuromorphic computing. These memory devices share the characteristics of an electronic element called memristor. The memristor can be regarded as a resistor with a history dependent resistance, which mimics the plasticity of a biological synapse. The present work presents various types of candidate devices that have been proposed in neuromorphic research, describes how they mimic a biological synapse and how they can be employed in artificial neuron network architectures.
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NANO-MATERIALS FOR MICROWAVE AND TERAHERTZ APPLICATIONSMyers, Joshua 21 December 2015 (has links)
No description available.
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Physical Vapor Deposition of Materials for Flexible Two Dimensional Electronic DevicesHagerty, Phillip 17 May 2016 (has links)
No description available.
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Materiales a base de grafenos como foto-(electro)catalizadores para la generación de hidrógenoRendón Patiño, Alejandra 02 September 2021 (has links)
Tesis por compendio / [ES] En los últimos años, la química se ha convertido en una herramienta esencial en la búsqueda de soluciones al cambio climático y la escasez de recursos. En este sentido, la catálisis ha desempeñado un papel importante en el desarrollo de materiales y procesos cada vez más limpios y eficientes. Dada la asequibilidad y la abundancia de materiales a base de carbono en comparación con los catalizadores tradicionales, como los metales preciosos y los óxidos metálicos, el grafeno es considerado un material prometedor para una amplia gama de aplicaciones. En este contexto, en la presente tesis doctoral se describe el empleo de poliestireno como precursor de grafeno, así como su uso para desarrollar un método general de exfoliación y formación de heterouniones con propiedades electrocatalíticas. Además, se describe otros materiales grafíticos, cuyas paredes están constituidas por unas pocas láminas de grafeno. Estos carbonos grafíticos 3D ultramicroporosos son capaces de promover reacciones como la oxidación aeróbica del alcohol bencílico o la ruptura fotocatalítica de la molécula del agua. / [CA] En els últims anys, la química s'ha convertit en una eina essencial en la recerca de solucions a el canvi climàtic i l'escassetat de recursos. En aquest sentit, la catàlisi ha tingut un paper important en el desenvolupament de materials i processos cada vegada més nets i eficients. Donada la assequibilitat i l'abundància de materials a base de carboni en comparació amb els catalitzadors tradicionals com ara els metalls preciosos i els òxids metàl·lics, el grafè és considerat un material prometedor per a una àmplia gamma d'aplicacions. En aquest context, en la present tesi doctoral es descriu l'ús de poliestirè com a precursor de grafè, així com el seu ús per a desenvolupar un mètode general d'exfoliació i formació de heterojuncions amb propietats electrocatalítiques. A més, es descriuen altres materials grafítics, les parets del quals estan constituïdes per unes poques làmines de grafè. Aquests carbonis grafítics 3D ultramicroporosos són capaços de promoure reaccions com l'oxidació aeròbica de l'alcohol benzílic o la ruptura fotocatalítica de la molècula d'aigua. / [EN] In the recent years, chemistry has become a crucial tool in the quest for solutions against climate change and resource scarcity. In this regard, catalysis plays an important role in the development of more efficient and sustainable materials and processes. Given the availability and low cost of carbon-based materials compared to traditional catalysts such as noble metals or metal oxides, graphene is considered a promising candidate for a wide variety of applications. In this context, the present doctoral thesis describes the use of polystyrene not only as graphene precursor but also as exfoliating agent to prepare heterojunctions with electrocatalytic properties. In addition, a general procedure to obtain graphitic materials comprising few layers graphene walls is also described. These ultramicroporous 3D graphitic carbons can promote the aerobic oxidation of benzilic acid or the photocatalytic water splitting reaction. / Rendón Patiño, A. (2021). Materiales a base de grafenos como foto-(electro)catalizadores para la generación de hidrógeno [Tesis doctoral]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/172379 / Compendio
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Synthesis of Vinylene-Linked Two-Dimensional Conjugated Polymers via the Horner–Wadsworth–Emmons ReactionPastoetter, Dominik L., Xu, Shunqi, Borrelli, Mino, Addicoat, Matthew, Biswal, Bishnu P., Paasch, Silvia, Dianat, Arezoo, Thomas, Heidi, Berger, Reinhard, Reineke, Sebastian, Brunner, Eike, Cuniberti, Gianaurelio, Richter, Marcus, Feng, Xinliang 21 May 2024 (has links)
In this work, we demonstrate the first synthesis of vinylene-linked 2D CPs, namely, 2D poly(phenylenequinoxalinevinylene)s 2D-PPQV1 and 2D-PPQV2, via the Horner–Wadsworth–Emmons (HWE) reaction of C2-symmetric 1,4-bis(diethylphosphonomethyl)benzene or 4,4′-bis(diethylphosphonomethyl)biphenyl with C3-symmetric 2,3,8,9,14,15-hexa(4-formylphenyl)diquinoxalino[2,3-a:2′,3′-c]phenazine as monomers. Density functional theory (DFT) simulations unveil the crucial role of the initial reversible C−C single bond formation for the synthesis of crystalline 2D CPs. Powder X-ray diffraction (PXRD) studies and nitrogen adsorption-desorption measurements demonstrate the formation of proclaimed crystalline, dual-pore structures with surface areas of up to 440 m2 g−1. More importantly, the optoelectronic properties of the obtained 2D-PPQV1 (Eg=2.2 eV) and 2D-PPQV2 (Eg=2.2 eV) are compared with those of cyano-vinylene-linked 2D-CN-PPQV1 (Eg=2.4 eV) produced by the Knoevenagel reaction and imine-linked 2D COF analog (2D-C=N-PPQV1, Eg=2.3 eV), unambiguously proving the superior conjugation of the vinylene-linked 2D CPs using the HWE reaction.
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Light Matter Interactions in Two-Dimensional Semiconducting Tungsten Diselenide for Next Generation Quantum-Based Optoelectronic DevicesBandyopadhyay, Avra Sankar 12 1900 (has links)
In this work, we explored one material from the broad family of 2D semiconductors, namely WSe2 to serve as an enabler for advanced, low-power, high-performance nanoelectronics and optoelectronic devices. A 2D WSe2 based field-effect-transistor (FET) was designed and fabricated using electron-beam lithography, that revealed an ultra-high mobility of ~ 625 cm2/V-s, with tunable charge transport behavior in the WSe2 channel, making it a promising candidate for high speed Si-based complimentary-metal-oxide-semiconductor (CMOS) technology. Furthermore, optoelectronic properties in 2D WSe2 based photodetectors and 2D WSe2/2D MoS2 based p-n junction diodes were also analyzed, where the photoresponsivity R and external quantum efficiency were exceptional. The monolayer WSe2 based photodetector, fabricated with Al metal contacts, showed a high R ~502 AW-1 under white light illumination. The EQE was also found to vary from 2.74×101 % - 4.02×103 % within the 400 nm -1100 nm spectral range of the tunable laser source. The interfacial metal-2D WSe2 junction characteristics, which promotes the use of such devices for end-use optoelectronics and quantum scale systems, were also studied and the interfacial stated density Dit in Al/2D WSe2 junction was computed to be the lowest reported to date ~ 3.45×1012 cm-2 eV-1.
We also examined the large exciton binding energy present in WSe2 through temperature-dependent Raman and photoluminescence spectroscopy, where localized exciton states perpetuated at 78 K that are gaining increasing attention for single photon emitters for quantum information processing. The exciton and phonon dynamics in 2D WSe2 were further analyzed to unveil other multi-body states besides localized excitons, such as trions whose population densities also evolved with temperature. The phonon lifetime, which is another interesting aspect of phonon dynamics, is calculated in 2D layered WSe2 using Raman spectroscopy for the first time and the influence of external stimuli such as temperature and laser power on the phonon behavior was also studied. Furthermore, we investigated the thermal properties in 2D WSe2 in a suspended architecture platform, and the thermal conductivity in suspended WSe2 was found to be ~ 1940 W/mK which was enhanced by ~ 4X when compared with substrate supported regions.
We also studied the use of halide-assisted low-pressure chemical vapor deposition (CVD) with NaCl to help to reduce the growth temperature to ∼750 °C, which is lower than the typical temperatures needed with conventional CVD for realizing 1L WSe2. The synthesis of monolayer WSe2 with high crystalline and optical quality using a halide assisted CVD method was successfully demonstrated where the role of substrate was deemed to play an important role to control the optical quality of the as-grown 2D WSe2. For example, the crystalline, optical and optoelectronics quality in CVD-grown monolayer WSe2 found to improve when sapphire was used as the substrate. Our work provides fundamental insights into the electronic, optoelectronic and quantum properties of WSe2 to pave the way for high-performance electronic, optoelectronic, and quantum-optoelectronic devices using scalable synthesis routes.
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Transition Metal Dichalcogenide Based Memory Devices and TransistorsFeng Zhang (7046639) 16 August 2019 (has links)
<div>Silicon based semiconductor technology is facing more and more challenges to continue the Moore's law due to its fundamental scaling limitations. To continue the pace of progress of device performance for both logic and memory devices, researchers are exploring new low-dimensional materials, e.g. nanowire, nanotube, graphene and hexagonal boron nitride. Transition metal dichalcogenides (TMDs) are attracted considerable attention due their atomically thin nature and proper bandgap at the initial study. Recently, more and more interesting properties are found in these materials, which will bring out more potential usefulness for electronic applications. Competing with the silicon device performance is not the only goal in the potential path finding of beyond silicon. Low-dimensional materials may have other outstanding performances as an alternative materials in many application realms. </div><div><br></div><div>This thesis explores the potential of TMD based devices in memory and logic applications. For the memory application, TMD based vertical devices are fully studied. Two-terminal vertical transition metal dichalcogenide (TMD) based memory selectors were firstly built and characterized, exhibiting better overall performance compared with some traditional selectors. Polymorphism is one of unique properties in TMD materials. 2D phase engineering in TMDs attracted great attention. While electric switching between semiconductor phase to metallic phase is the most desirable. In this thesis, electric field induced structural transition in MoTe<sub>2</sub> and Mo<sub>1-x</sub>W<sub>x</sub>Te<sub>2</sub> is firstly presented. Reproducible bipolar resistive random access (RRAM) behavior is observed in MoTe<sub>2</sub> and Mo<sub>1-x</sub>W<sub>x</sub>Te<sub>2</sub> based vertical devices. Direct confirmation of a phase transition from a 2H semiconductor to a distorted 2H<sub>d</sub> metallic phase was obtained after applying an electric field. Set voltage is changed with flake thickness, and switching speed is less than 5 ns. Different from conventional RRAM devices based on ionic migration, the MoTe<sub>2</sub>-based RRAMs offer intrinsically better reliability and control. In comparison to phase change memory (PCM)-based devices that operate based on a change between an amorphous and a crystalline structure, our MoTe<sub>2</sub>-based RRAM devices allow faster switching due to a transition between two crystalline states. Moreover, utilization of atomically thin 2D materials allows for aggressive scaling and high-performance flexible electronics applications. Both of the studies shine lights on the new application in the memory field with two-dimensional materials.<br></div><div><br></div><div>For the logic application, the ultra thin body nature of TMDs allows for more aggressive scaling compared with bulk material - silicon. Two aspects of scaling properties in TMD based devices are discussed, channel length scaling and channel width scaling. A tunability of short channel effects in MoS<sub>2</sub> field effect transistor (FET) is reported. The electrical performance of MoS<sub>2</sub> flakes is governed by an unexpected dependence on the effective body thickness of the device which in turn depends on the amount of intercalated water molecules that exist in the layered structure. In particular, we observe that the doping stage of a MoS<sub>2</sub> FET strongly depends on the environment (air/vacuum). For the channel width scaling, the impact of edge states in three types of TMDs, metallic T<sub>d</sub>-phase WTe<sub>2</sub> as well as semiconducting 2H-phase MoTe<sub>2</sub> and MoS<sub>2</sub> were explored, by patterning thin flakes into ribbons with varying channel widths. No obvious charge depletion at the edges is observed for any of these three materials, which is different from what has been observed in graphene nanoribbon devices. </div>
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Adding a novel material to the 2D toolboxBüchner, Christin 18 July 2016 (has links)
Die Sammlung der zwei-dimensionalen (2D) Materialien ist begrenzt, da sehr wenige Verbindungen stabil bleiben, sobald sie nur aus Oberflächen bestehen. Aufgrund ihrer außergewöhnlichen Eigenschaften sind 2D Materialien jedoch nach wie vor überaus begehrt. Vor kurzem wurden atomar definierte, chemisch gesättigte SiO2 Bilagen auf verschiedenen Metalloberflächen präpariert. Eine solche ultradünne Silika-Lage wäre eine vielversprechende Ergänzung zur Familie der 2D Materialien, wenn sie unter Strukturerhalt vom Wachstumssubstrat isoliert werden kann. In dieser Arbeit untersuchen wir die Eigenschaften einer Silika-Bilage im Zusammenhang mit Anwendungen von 2D Materialien. Die Bilage besitzt kristalline und amorphe Regionen, die beide atomar glatt sind. Die kristalline Region besitzt ein hexagonales Gitter mit gleichmäßiger Porengröße, während die amorphe Region einer komplexeren Beschreibung bedarf. In einer Studie von Baublöcken zeigen wir, dass mittelreichweitige Struktureinheiten in Korrelation mit einem Parameter für die Bindungswinkelfrustration auftreten. Das Netzwerk verschiedener Nanoporen stellt eine größenselektive Membran dar, wie wir in einer Adsorptionsstudie zeigen. Pd- und Au-Atome durchdringen den Silikafilm abhängig von der Größe der zur Verfügung stehenden Nanoporen. Der ultradünne Film hält der Einwirkung verschiedener Lösungsmittel stand und die Beständigkeit der Struktur in Wasser wird analysiert. Diese Studien deuten die außergewöhnliche Stabilität dieser Struktur an. Wir entwickeln eine polymerbasierte mechanische Exfoliation, um den Film von seinem Wachstumssubstrat zu entfernen, und zeigen, dass der Film als intakte Einheit vom Substrat abgelöst wird. Wir präsentieren anschließend den Transfer des Silikafilms auf ein TEM-Gitter, wo er schraubenartig gewundene Formen annimmt. Weiterhin wurde der Film auf ein Pt(111)-Substrat transferiert. In diesem Fall wird unter Erhalt der Struktur ein Transfer in der Größenordnung von Millimetern erreicht. / The library of two-dimensional (2D) materials is limited, since only very few compounds remain stable when they consist of only surfaces. Yet, due to their extraordinary properties, the hunt for new 2D materials continues. Recently, an atomically defined, self-saturated SiO2 bilayer has been prepared on several metal surfaces. This ultrathin silica sheet would be a promising addition to the family of 2D materials, if it can be isolated from its growth substrate without compromising its structure. In this work, we explore the properties of a silica bilayer grown on Ru(0001) in the context of 2D technology applications. The bilayer sheet exhibits crystalline and amorphous regions, both being atomically flat. The crystalline region possesses a hexagonal lattice with uniform pore size, while the amorphous region requires a more complex description. In a building block study of the amorphous region, we find that medium range structural patterns correlate with a parameter describing the bond angle frustration. The resulting network of different nanopores represents a size-selective membrane, as illustrated in an adsorption study. Pd and Au atoms are shown to penetrate the silica film selectively, depending on the presence of appropriately sized nanopores. The ultrathin silica film is shown to withstand exposure to different solvents and the stability of the structure in water is analyzed. These studies indicate extraordinary stability of this nanostructure. We develop a polymer assisted mechanical exfoliation method for removing the film from the growth substrate, providing evidence that the film is removed as an intact sheet from the growth substrate. We subsequently present the transfer of the silica bilayer to a TEM grid, where it forms micro-ribbons. Further, the film is transferred to a Pt(111) substrate, where mm-scale transfer under retention of the structure is achieved.
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