Thesis (MPhil)--Stellenbosch University, 2013. / ENGLISH ABSTRACT: Students graduate from Boland College after obtaining the National Certificates N4 – N6 in Tourism. I have been working at Boland College Stellenbosch Campus as a tourism lecturer for 12 years and over the past few years I have found that students have been struggling to find employment in the tourism industry on completion of their studies. The national tourism curriculum offered at FET colleges was implemented in 1995 with the last renewal in 2001 for selected subjects. The tourism industry, however, is a vibrant, ever-changing industry which stands in direct contrast with a static, needs-insensitive and unchanging curriculum. The aim of this study was to establish in which respects the current national tourism curriculum corresponds, or does not correspond, with what the tourism industry in Stellenbosch requires from entry-level employees in terms of expected skills, knowledge and attitudes. Qualitative methods were used to generate data from employers representing the tourism industry in Stellenbosch, graduates and lecturers from Boland College. Research participants were interviewed using semi-structured interviews. The data was analysed by doing verbatim transcriptions of the interviews, using coding and an Excel spread sheet analysis. The results revealed specific areas where the current national tourism curriculum does not correspond with the expectations and needs that the tourism industry in Stellenbosch has from entry-level employees in terms of expected skills, knowledge and attitudes. / AFRIKAANSE OPSOMMING: Studente ontvang ‘n kwalifikasie in Toerisme nadat hulle die Nasionale Sertifikate N4 – N6 in Toerisme voltooi het. Ek werk die afgelope 12 jaar as toerismedosent by Boland Kollege Stellenbosch Kampus. Gedurende die afgelope paar jaar het ek gevind dat studente sukkel om werk te kry in die toerismebedryf nadat hulle hul studies voltooi het. Die nasionale toerisme-kurrikulum wat by VOO Kolleges aangebied word, is in 1995 geïmplementeer en die laaste keer in 2001 hernu en boonop slegs in sekere vakke. Die toerismebedryf is egter ‘n lewendige, vinnig-veranderende industrie in direkte teenstelling met die statiese, onveranderde kurrikulum wat oënskynlik nie sensitief genoeg is vir die behoeftes van die toerismebedryf nie. Die doel van hierdie studie was om vas te stel in watter mate die huidige nasionale toerisme-kurrikulum ooreenstem, of nie ooreenstem nie, met wat die toerismebedryf in Stellenbosch verwag van intreevlak-werknemers in terme van verwagte vaardighede, kennis en houdings. Kwalitatiewe metodes is gebruik om data te genereer en onderhoude is gevoer met werkgewers wat die toerismebedryf in Stellenbosch verteenwoordig asook gegradueerdes en dosente van Boland Kollege. Daar is hoofsaaklik gebruik gemaak van semi-gestruktueerde onderhoude. Die data-analise het bestaan uit verbatim getranskribeerde onderhoude, die kodering daarvan asook ‘n genoteerde Excel-ontledingstaat. Die resultate van die studie dui op spesifieke aspekte van die nasionale toerisme kurrikulum wat nie ooreenstem met die verwagtinge en behoeftes wat die toerisme-industrie in Stellenbosch het van intreevlak werknemers in terme van vaardighede, kennis en houdings nie.

Ce travail de thèse comporte trois parties. La partie principale s'intéresse au transport des courants polarisés en spin dans des matériaux à base de semi-conducteurs. Nous dérivons et analysons une hiérarchie des modèles allant du niveau microscopique au niveau macroscopique et tenant compte des différents mécanismes de rotation et de relaxation du vecteur spin dans les semi-conducteurs. Les mécanismes essentiels pris en compte sont les couplages spin-orbite et les interactions avec renversement de spin (spin-flip interactions). Une analyse semi-classique (via la transformation de Wigner) de l'équation de Schrödinger avec hamiltonien spin-orbite est présentée. Au niveau cinétique, l'équation de Vlasov (ou Boltzmann) spinorielle est une équation à valeur dans l'ensemble des matrices carrées d'ordre deux hermitiennes et positives. Partant ensuite de la spinor forme de l'équation de Boltzmann (avec différents opérateurs de collisions avec et sans renversement du vecteur spin) et par des techniques d'asymptotiques de diffusion, nous dérivons et analysons plusieurs modèles macroscopiques. Ils sont de type dérive-diffusion, SHE, Energie-Transport, à deux composantes ou spinoriels conservant des effets de rotation et de relaxation du vecteur spin. Nous validons ensuite ces modèles par des cas tests numériques. Deux applications numériques sont présentées : la simulation d'un transistor à effet de rotation de spin et l'étude de l'effet d'accumulation de spin à l'interface entre deux couches semi-conductrices différemment dopées. Dans la seconde partie, nous considérons une équation cinétique de type Boltzmann linéaire dans des domaines où un champ magnétique fort est appliqué. Nous étudions la limite de diffusion en supposant que le champ magnétique est unidirectionnel et tend vers l'infini. Le modèle obtenu est un modèle macroscopique constitué d'une équation diffusive dans la direction parallèle au champ magnétique et d'une dérive représentant l'effet centre-guide en présence d'un champ électrique dans la direction perpendiculaire. Le terme de diffusion contient des moyennes de giration de l'opérateur de collisions utilisé. Nous prouvons la convergence en utilisant des techniques d'entropie pour traiter le comportement diffusif, et en conjuguant par les rotations locales induites par le champ magnétique pour tenir compte des oscillations. Dans la troisième partie de cette thèse, Nous nous intéressons à la description du potentiel de confinement dans des gas d'électrons bidimensionnels. Nous étudions la limite faible longueur de Debye (ou faible température) du système de Schrödinger-Poisson unidimensionnel stationnaire sur un intervalle borné. Les électrons sont supposés dans un mélange d'états avec une statistique de Boltzmann (ou de Fermi-Dirac). En utilisant différentes reformulations du système comme des problèmes de minimisation convexe, nous montrons qu'asymptotiquement seul le premier niveau d'énergie est occupé. Le potentiel électrostatique converge vers une couche limite avec un profil calculé à l'aide d'un système de Schrödinger-Poisson sur le demi axe réel.

Silicon based 3D fin structure is believed to be the potential future of current semiconductor technology. However, there are significant challenges still exist in realizing a manufacturable fin based process. In this work, we have studied the effects of hydrogen anneal on the structural and electrical characteristics of silicon fin based devices: tri-gate, finFET to name a few. H₂ anneal is shown to play a major role in structural integrity and manufacturability of 3D fin structure which is the most critical feature for these types of devices. Both the temperature and the pressure of H₂ anneal can result in significant alteration of fin height and shape as well as electrical characteristics. Optimum H₂ anneal is required in order to improve carrier mobility and device reliability as shown in this work. A new hard-mask based process was developed to retain H₂ anneal related benefit while eliminating detrimental effects such as reduction of device drive current due to fin height reduction. We have also demonstrated a novel 1T-1C pseudo Static Random Access Memory (1T-1C pseudo SRAM) memory cell using low cost conventional tri-gate process by utilizing selective H₂ anneal and other clever process techniques. TCAD-based simulation was also provided to show its competitive advantage over other types of static and dynamic memories in 45nm and beyond technologies. A high gain bipolar based on silicon fin process flow was proposed for the first time that can be used in BiCMOS technology suitable for low cost mixed signal and RF products. TCAD-based simulation results proved the concept with gain as high 100 for a NPN device using single additional mask. Overall, this work has shown that several novel process techniques and selective use of optimum H₂ anneal can lead to various high performance and low cost devices and memory cells those are much better than the devices using current conventional 3D fin based process techniques. / text

Enrolments in agriculture programmes at universities in South Africa are low when compared to the other programmes. The purpose of this study was therefore to identify factors influencing the choice of agriculture as a study discipline by undergraduates in agriculture, in an open distance education university in South Africa. The study also investigated the impact of the three agriculture curricula taught at school level, as well as how well it prepares students for tertiary education. Both qualitative and quantitative research methods were used. Open distance-learning agriculture students and agriculture educators participated in the survey. A structured online questionnaire and an open-ended questionnaire were employed. The study revealed that two major composite variables, namely family and friends, as well as job considerations, were highly significant in the students’ choice of agriculture at tertiary level. The impact of the agriculture curricula taught in the schools in preparation for tertiary education gave learners basic terminology and concepts involved in agriculture. The study also revealed challenges faced by agricultural science educators amongst which were the revealed challenges faced by agricultural science educators amongst which were the learners’ negative attitude towards the subject, inadequate or lack of infrastructure, and lack of proper guidance and counselling regarding choosing of subjects as factors that could hinder effective teaching and learning of agriculture in South Africa schools. Students studying through open distance learning indicated convenience, flexibility of studying at own pace, and ample time to spend with family and work, as factors that influenced their choice of studying through open distance learning. Recommendations on how to improve the agriculture curriculum in South African schools and attract more students’ enrolment in agriculture as a field of study at tertiary level upon completion of grade 12 are discussed in detail in the study / Agriculture, Animal Health and Human Ecology / M. Sc. (Agriculture)

This thesis is a study of a leadership model for the effective management of Further Education and Training (FET) colleges in the Gauteng Province. This research was triggered by the need for quality and sound leadership skills highly needed in FET colleges. The vision of FET colleges lies at the heart of the integration of the country's education and training system. Leadership is the distinguishing factor in bringing about organisational transformation. A key contemporary issue in the development of a high quality education service relates to the new thinking about how best to pursue quality and excellence in FET colleges. Leadership, strategic planning and the need for alternative models of management lead, inevitably, towards a reconsideration of both staff competencies and continuing staff and organisational development. This research seeks to assist those who have the responsibility of leading and managing the further conceptualisation and implementation of further education and training. A qualitative research was conducted, in which a newly merged college in Pretoria was chosen as a case study for this research. The following constituted the broad aims of this study:  To examine the leadership strategies that should be employed for effective management of FET colleges;  To investigate the vision and mission development and implementation and the organisational structures established;  To determine the opportunities and challenges offered by the new large and multi-sited college; and  To investigate a leadership model for the effective management of FET colleges. Semi-structured individual interviews were conducted with the leadership of the college ranging from the senior managers, campus managers, middle managers to educators. Analysis of documents and observation notes was also done to supply more data about FET leadership. Data were analysed and interpreted by identifying themes and categories that would shed more light into the effective leadership of the college. The following recommendations were made:  A new approach to the leadership of the college should be adopted;  The leadership of the college should be more accountable and responsive to community needs;  More financial support should be allocated to FET colleges; and  More focus should be given to learner support. / Educational Studies / D.Ed. (Education Management)

Computing / M. Sc. (Information Systems)

The study investigated the factors that are responsible for student dropout rates at Gert Sibande FET College. A random sampling method was used to select participants for this study. A quantitative approach was used in this study. Accordingly, data were collected using a questionnaire designed in a Likert scale format. The study was limited to students at Gert Sibande FET College’s two campuses, namely, Evander and Sibanesetfu. Subsequently, the findings revealed that socio-economic factors, institutional policies and funding strongly explain the prevalent dropout rates at these two campuses. It is recommended that, adoption of student centred funding model, cultivation of relationships between lecturers and students as well as restructuring learning schedules be factored in during policy development. The findings confirmed that these recommendations would help reverse continuous dropouts currently experienced at Gert Sibande FET College. / Educational Leadership and Management / M. Ed. (Education Management)

Spintronics (spin based electronics) is a relatively new topic of research which is important both from the fundamental and technological point of view. In conventional electronics charge of the electron is manipulated and controlled to realize electronic devices. Spintronics uses charge as well as the spin degree of freedom of electrons, which is completely ignored in the charge based devices. This new device concept brings in a whole new set of device possibilities with potential advantages like higher speed, greater efficiency, non-volatility, reduced power consumption etc. The first realization of the spintronic device happened in 1989, owing to the discovery of the Giant Magneto-resistive (GMR) structure showing a large resistance change by the application of an external magnetic field. Nobel Prize in Physics is awarded for this discovery in 2007. In less than ten years, such devices moved from the lab to commercial devices, as read head sensors in hard disc drives. This new sensor led to an unprecedented yearly growth in the area l density of bits in a magnetic disc drive. Since 2005, another spintronic device known as Magnetic Tunnel Junction (MTJ) which shows a better performance replaced the existing GMR structures in the read heads. Another device which can potentially replace Si based Dynamic Random Access Memory (DRAM) is Magneto-resistive Random Access Memory (MRAM). Being magnetic it is non-volatile, which means not only it retains its memory with the power turned off but also there is no constant power required for frequent refreshing. This can save a lot of power(~ 10-15 Watts in a DRAM), which is quite significant amount for any portable device which runs under battery. Prototype of a commercial MRAM is also made during 2004-2005 by Infineon and Freescale Semiconductors. Recent development has shown switching of magnetic moment by spin-polarised currents (known as spin transfer torque), electric fields, and photonic fields. Instead of Oersted field switching in the conventional MRAM devices, spin torque effect can also be used to switch a magnetic element more efficiently. Recently Spin-Torque MRAM has gained lot of interest due to it’s less power consumption during the writing process. A continuous research effort is going on in realizing other proposed spintronic devices, such as Spin Torque Oscillator, Spin Field Effect Transistor , Race Track Memory etc. which are yet to get realized or yet to make their entry in the commercial devices. Spintronics can be divided in to two broad subfields viz.(1) Semiconductor Spintronics and (2) Metallic Spintronics. Most of the devices belong to the second class whereas the former one is rich in fundamental science and not yet cleared its path towards the world of application. Any spintronic device requires ferromagnetic material which is generally the source of spin polarized electrons. For semiconductor spintronic devices, the main obstacle is the non-existence of the ferromagnetic semiconductor above room temperature (RT). So the development in this direction is very much dependent on the material science research and discovery of novel material systems. Almost a decade back, Dilute Magnetic Semiconductors (DMS) are proposed to behaving RT ferromagnetism. As a result an intense theoretical and experimental research is being carried out since then on these materials. Still a general consensus is lacking both in terms of theory as well as experiment. There are many methodologies and thin film deposition protocols have been followed by different research groups to realize spintronic device concepts. The deposition techniques such as magnetron sputtering, molecular beam epitaxy have been found very efficient for growing metallic spintronic devices. For semiconductor spintronics especially in the area of Dilute Magnetic Semiconductors (DMS) pulsed laser ablation is also considered to be a viable technique. Even though pulsed laser ablation is a very powerful technique to prepare stoichiometric multi-component oxide films, it’s viability for the growth of metallic films and multilayer is considered to be limited. In this regard, we have used pulsed laser ablation to prepare pure and Co doped ZnO films, to examine the magnetic and magneto-transport behavior of these oxides. In addition extensive work has been carried out to optimize and reproducibly prepare metallic multilayer by Pulsed Laser Deposition to realize Spin Valve (SV) effect, which proves the viability of this technique for making metallic multilayer. This thesis deals with the study of Pulsed Laser Deposition(PLD) deposited DMSs and metallic SVs. The thesis is organized into seven chapters as described below: • Chapter:1 This chapter gives an introduction to Spintronics and the different device structures. It is followed by a brief description of the motivation of the present work. Since magnetism is at the heart of the spintronics, next we attempt to introduce some of the basic concepts in magnetism, which are related to the topics discussed in the following chapters. We discuss about various exchange interactions responsible for the long range ferromagnetic ordering below Curie temperature in different compounds. Other magnetic properties are also discussed. Then another important phenomenon called magnetic anisotropy is brought in. We discuss the origin of different types of anisotropy in materials. These anisotropies are also responsible for magnetic domain formation. Then a description of the different types of domain walls are introduced. Unlike conventional electronics, spintronics deals with spin polarized current. A short description of spin polarization from the band picture and concept of half-metal is introduced. The next part (Section-I) of this chapter gives an overview of the challenges in semiconductor spintronics. The spin injection efficiency from a ferromagnetic metal to a semiconductor is found to be poor. This problem is attributed to the conductivity mismatch at the interface. DMS materials can be potential candidates in order to solve this problem. Ferromagnetism in these proposed materials cannot be explained in terms of the standard exchange mechanisms. A model was first proposed for the hole doped system based on Zener model. A more apt model for the n-doped high dielectric materials is then proposed based on Bound Magnetic Polarons (BMP). These models for the unusual ferromagnetism are briefly discussed. Although ferromagnetism is observed by different groups, often questions are raised about the intrinsic origin of this behavior and the topic is still under debate. In this study we have tried to correlate the magnetic property with the transport property as the transport properties are generally not affected much by the presence of external impurities and probes the intrinsic property of the material. Transport and the magneto-transport in disordered materials in general are discussed. A specific model proposed for degenerate semiconductors, which is used for fitting our experimental data is explained. As the ferromagnetism in these materials are generally found to be related to the defects, different types of possible defects are described. Section-II deals with the metallic SV devices. In the history of spintronics, this is one of the most basic and most studied structures, but still having a lot of interest both fundamentally and technologically. A brief history of this discovery and a chronological progress in the device structure is discussed. Our work focuses on the metallic spin valve (SV) structures. Different types of SVs and their properties are explained. In a SV structure one of the ferromagnets (FM) is pinned using an adjuscent antiferromagnetic layer by an effect called exchange bias. A brief description of exchange bias and the effects of different parameters is given. This is followed by a discussion about the theory of GMR which deals with the spin dependent scattering at the bulk and at the interfaces, their relative contributions, effect of the band matching etc. A simple resistor model is used to explain the qualitative behavior of these SVs. The chapter is concluded with a brief summery and applications. • Chapter:2 This chapter provides a brief description of some of the experimental apparatus that are used to perform various experiments. The chapter is organized according to the general functionality of the techniques. This includes different thin film deposition techniques which are used depending on the requirements and also for comparing the properties of the samples, grown by different techniques. Structural, spectroscopic, magnetic and different microscopy techniques which are extensively used throughout, are discussed and their working principles are explained. This work also involves nano/microstructuring of devices. Mainly two structuring techniques are used viz. e-beam lithography and optical lithography by laser writer. In this section we will be discussing about these two techniques and other associated techniques like lift-off, etching etc. Effect of different parameters on the device structures are highlighted. • Chapter:3 Chapter-3 deals with the synthesis and characterization of the pure and 5% Co doped ZnO bulk samples. First a brief introduction about the ZnO crystal structure, band structure and other properties are given followed by the synthesis technique followed in our study. Synthesis is done by low temeperature in organic co-precipitation method. This liquid phase synthesis gives better homogeniety. As-grown sample is also sintered at a higher temperature. Structural study confirms the proper synthesis of the intended compound. Spectroscopic as well as magnetic study of the bulk doped sample indicates the presence of Co nano clusters in the low temperature synthesized sample, whereas after sintering indication of Co2+ is observed which reflects in the magnetic property as well. These samples are used as target material for laser ablation. • Chapter:4 Chapter-4 presents the results of the pure and Co doped ZnO thin film samples. Thin films are grown by PLD method on r-plane Sapphire substrates. Details of the growth technique and the deposition parameters are explained. Our result shows that 5% Co doped ZnO thin film is ferromagnetic in nature as expected in a DMS material, although the film is grown using a paramagnetic target. We also report that pure ZnO grown in an oxygen deficient condition giving ferromagnetic behavior. Not only that, the obtained saturation moment is much higher compared to the Co doped sample. We have demonstrated that the FM can be tuned by tuning the oxygen content and FM disappears when the film is annealed in an oxygen environment .But for the Co doped sample magnetic property could not be tuned much as Co doping stabilizes the surface states. To exclude the possibilities of the extrinsic origin we have done a detailed magneto-transport study for both doped and undoped films. For ZnO, we have shown a one to one correlation of the magnetic and magneto-transport data which further supports the fact that the obtained magnetic behavior is intrinsic. Fitting of the magnetorsistance (MR) data for the pure and Co doped ZnO samples is done using a semi-empirical formula, consisting of both positive and negative MR terms originally proposed for degenerate semiconductors .Excellent agreement of the experimental data is found with the formula. For pure ZnO sample we have extracted the mobility, carrier concentration etc .by Hall measurement. The fabrication steps of Hall bar sample which involves optical lithography and ion beam etching are discussed. 3D e-e interaction induced transport mechanism is found to be dominant in case of oxygen deficient pure ZnO. • Chapter:5 Chapter-5 demonstrates the tuning of band gap of ZnO by alloying with MgO. By changing the ZnO:MgO ratio in PLD grown films, we could tune the band gap over a wide range. Composition alanalysis is done by Rutherford Back-Scattering. Structural and spectroscopic studies are carried out, which shows tuning of band gap upon alloying with MgO. We could tune ZnO band gap from 3.3eV to 3.92eV by30% MgO alloying, while retaining the Wurtzite crystal structure. • Chapter:6 Chapter-6 demonstrates the metallic Pseudo Spin Valve (PSV) structures grown by sputtering and by PLD. Main focus of this chapter is to show that, PLD can be aviable technique for making metallic PSV and Spin Valve (SV) structures. This is almost an unexplored technique for growing metallic thin film SVs, as it is evident in the literature. NiFe and Co are used as the soft and hard FM layers respectively, Au and Cu are used as the spacer layer. FeMn is used for pinning the Co layer in case of the SV structures. The first section describes the properties of these materials and then substrate preparation, deposition parameters etc. are explained in details. Properties of sputter deposited PSV structures are also described. Thickness variation of different layers, double PSV structure and angular variation of the MR properties are presented. Generally two measurement geometries are followed for the SV measurements viz.(1) Current In Plane (CIP) and (2) Current Perpendicular to Plane(CPP). We have carried out MR studies in both the measurement geometries. Measurement in CPP geometry is much more involved than CIP and need structuring with multiple lithography steps. CPP measurement geometry scheme and the process steps are discussed. For this measurement a special ac bridge technique is followed which is also discussed. In the next part we have demonstrated PSV and SV structures, grown, using PLD in an Ultra High Vacuum (UHV) system. Not only that, we have obtained a CIPMR as high as 3.3%. PLD is generally thought to be a technique for oxide deposition and metallic multilayers are not deposited due to particulate formation, high enegy of the adatom species which can lead to inter-mixing at the interface etc. But in this study we have shown that by properly tuning the deposition parameters, it is possible to grow SVs using PLD. We have found the roughness of the PLD grown films are much lower compared to the sputtered films. For top SV structures we have obtained exchange bias even in the absence of applied field during deposition. This effect is observed by performing magnetic and magneto-resistance measurements. Effect of different layer thicknesses, field annealing etc. are discussed. Two different spacer layers are used and their properties are compared. We have found that the interface engineered structures are giving highest MR among the different samples. Then a conclusion of our study is presented followed by a discussion on the difficulties and challenges faced for optimizing the PLD grown SVs. • Chapter:7 Finally, in Chapter-7, various results are summarized and a broad outlook is given. Perspectives for the continuation of the present work is also given.

MEMS Sensors are widely used for sensing inertial displacements. The displacements arising out of acceleration /Coriolis effect are typically in the range of 1 nm-1 m. This work investigates the realization of high resolution MEMS inertial sensors using novel displacement sensing mechanisms. Capacitance sensing ASIC is developed as part of conventional electronics interface with MEMS sensor under the conventional CMOS-MEMS integration strategy. The capacitance sense ASIC based on Continuous Time Voltage scheme with coherent and non-coherent demodulation is prototyped on AMS 0.35 m technology. The ASIC was tested to sense C = 3.125 fF over a base of 2 pF using on-chip built-in test capacitors. Dynamic performance of this ASIC was validated by interfacing with a DaCM MEMS accelerometer. 200milli-g of acceleration (equivalent to a C = 2.8 fF) over an input frequency of 20Hz is measurable using the developed ASIC. The observed sensitivity is 90mV/g. The ASIC has several programmable features such as variation in trim capacitance (3.125 fF-12.5 pF), bandwidth selection (500 Hz-20 kHz) and variable gain options (2-100). Capacitance detection, a dominant sensing principle in MEMs sensors, experiences inherent limitation due to the role of parasitics when the displacements of interest are below 5 nm range. The capacitive equivalence ( C) for the range of displacements of the order of 5 nm and below would vary in the range atto-to-zepto farad. Hence there is a need to explore alternative sensing schemes which preferably yield higher sensitivity (than those offered by the conventional integration schemes) and are based on the principle of built-in transduction to help overcome the influence of parasitics on sensitivity. In this regard, 3 non-conventional architectures are explored which fall under the direct integration classification namely: (a) Sub-threshold based sensing (b) Fringe field based sensing and (c) Tunneling current based sensing. a) In Sub-threshold based sensing, FET with a suspended gate is used for displacement sensing. The FET is biased in the sub-threshold region of operation. The exponential modulation of drain current for a change in displacement of 1 nm is evaluated using TCAD, and the in uence of initial air-gap variation on the sensitivity factor ( ID=ID) is brought out. For 1% change in air gap displacement (i.e., TGap/TGap, the gap variation resulting due to the inertial force / mass loading) nearly 1050% change in drain current( ID=ID) is observed (considering initial air gaps of the order 100 nm). This validates the high sensitivity offered by the device in this regime of operation. A comparison of sensitivity estimate using the capacitive equivalence model and TCAD simulated model for different initial air-gaps in a FD-SOI FET is brought out. The influence of FDSOI FET device parameters on sensitivity, namely the variation of TSi, TBox, NA and TGap are explored. CMOS compatibility and fabrication feasibility of this architecture was looked into by resorting to the post processing approach used for validating the sub-threshold bias concept. The IMD layers of the Bulk FETs fabricated through AMS 0.35 technology were etched using BHF and IPA mixture to result in a free standing metal (Al) layers acting as the suspended gate. The performance estimate is carried out considering specific Equivalent Gap Thickness (EGT) of 573 nm and 235 nm, to help overcome the role of coupled electrostatics in influencing the sensitivity metric. The sensitivity observed by biasing this post processed bulk FET in sub-threshold is 114% ( ID=ID change) for a 59% ( d/d change). The equivalent C in this case is 370 aF. b) In Fringe eld based sensing approach, a JunctionLess FET (JLFET) is used as a depletion mode device and an out-of-plane gate displacement would help modulate the device pinch-o voltage due to fringe field coupling. The resulting change in the gate fringe field due to this displacement modulates the drain current of the JunctionLess FET. The displacement induced fringe field change (relative to the FET channel) brings about a distinct shift in the ID-VG characteristics of the JLFET. For displacement d = 2 nm, the JLFET with a channel doping of ND = 8X1018cm 3 and a bias point of VG = -47.7 V, 98% enhancement in sensitivity is observed in 3D TCAD simulations. The equivalent C in this case is 29 zF. The role of ground-planes in the device operation is explored. c) In the tunneling current based sensing approach, the beams fabricated using the SOI-MUMPS process are FIB milled so as to create very ne air gaps of the order of nearly 85 nm. Under high electric fields of the order > 8 MV/cm, the lateral displacement based tunneling sensor offers enhanced change in sensitivity for an induced external force at a fixed DC bias. When integrated as an array with varying electrode overlap, this technique can track displacements over a wide range. With the initial beam overlap as 1.2 m, for a lateral displacement of 1.2 m, a 100% change in sensitivity ( ID=ID) is observed. The effect of fringe field can be completely neglected here unlike its capacitive beam equivalent.

The study population for the research comprised Grade 9 learners attending three co-educational, independent schools in KwaZulu-Natal in order to determine factors influencing the selection of business studies for FET phase. Methodology involved qualitative and quantitative approaches with closed and open-ended questionnaires plus one-on-one interviews. Descriptive statistics were produced and opened ended questions and interviews were examined for trends and influences. Findings reflected wide divergence in factual information, attitudes, and opinions on significant issues such as expected level of difficulty, influence of educators, parents and peers on selection, amount of work required and value of subject for future studies or careers. Conclusions were that there was a lack of completed research indicating a need for future research, greater preparation was required pre-FET level to assist decision making about selection of the subject which should involve parents, educators and input from the business world. / Curriculum and Instructional Studies / M. Ed. (Curriculum Studies)