Continual scaling of devices and on-chip wiring has brought significant challenges for materials and processes beyond the 32-nm technology node in microelectronics. Recently, three-dimensional (3-D) integration with through-silicon vias (TSVs) has emerged as an effective solution to meet the future interconnect requirements. Among others, thermo-mechanical reliability is a key concern for the development of TSV structures used in die stacking as 3-D interconnects. In this dissertation, thermal stresses and interfacial reliability of TSV structures are analyzed by combining analytical and numerical models with experimental measurements. First, three-dimensional near-surface stress distribution is analyzed for a simplified TSV structure consisting of a single via embedded in a silicon (Si) wafer. A semi-analytic solution is developed and compared with finite element analysis (FEA). For further study, the effects of anisotropic elasticity in Si and metal plasticity in the via on the stress distribution and deformation are investigated. Next, by micro-Raman spectroscopy and bending beam technique, experimental measurements of the thermal stresses in TSV structures are conducted. The micro-Raman measurements characterize the local distribution of the near-surface stresses in Si around TSVs. On the other hand, the bending beam technique measures the average stress and viii deformation in the TSV structures. To understand the elastic and plastic behavior of TSVs, the microstructural evolution of the Cu vias is analyzed using focused ion beam (FIB) and electron backscattering diffraction (EBSD) techniques. To study the impacts of the thermal stresses on interfacial reliability of TSV structures, an analytical solution is developed for the steady-state energy release rate as the upper bound of the driving force for interfacial delamination. The effect of crack length and wafer thickness on the energy release rate is studied by FEA. Furthermore, to model interfacial crack nucleation, an analytical approach is developed by combining a shear lag model with a cohesive interface model. Finally, the effects of structural designs and the variation of the constituent materials on TSV reliability are investigated. The steady state solutions for the energy release rate are developed for various TSV designs and via materials (Al, Cu, Ni, and W) to evaluate the interfacial reliability. The parameters for TSV design optimization are discussed from the perspectives of interfacial reliability. / text

Technology trends toward lower power, higher speed and higher density devices have pushed the package performance to its limits. The high frequency effects e.g., crosstalk and signal distortion, may cause high bit error rates or malfunctioning of the circuit. Therefore, the successful release of a new product requires constant attention to the high frequency effects through the whole design process. Full-wave electromagnetic tools must be used for this purpose. Unfortunately, currently available full-wave tools require excessive computational resources to simulate large-scale interconnect structures.A prototype version of the Full-Wave Layered-Interconnect Simulator (UA-FWLIS), which employs the Method of Moments (MoM) technique, was developed in response to this design need. Instead of using standard numerical integration techniques, the MoM reaction elements were analytically evaluated, thereby greatly improving the computational efficiency of the simulator. However, the expansion and testing functions that are employed in the prototype simulator involve filamentary functions across the wire. Thus, many problems cannot be handled correctly. Therefore, a fundamental extension is made in this dissertation to incorporate rectangular-based, finite-width expansion and testing functions into the simulator. The critical mathematical issues and theoretical issues that were met during the extension are straightened out. The breakthroughs that were accomplished in this dissertation lay the foundation for future extensions. A new bend-cell expansion function is also introduced, thus allowing the simulator to handle bends on the interconnects with fewer unknowns. In addition, the Incomplete Lipschitz-Hankel integrals, which are used in the analytical solution, are studied. Two new series expansions were also developed to improve the computational efficiency and accuracy.

No description available.

Ferritic stainless steels are the most commonly used materials for solid oxide fuel cell interconnect application. Although these alloys may meet the criteria for interconnect application for short periods of service, their application is limited for long-term use (i.e., 40,000 h) due to poor oxidation behaviour that results in a rapid increase in contact resistance. In addition, volatile Cr species migrating from the chromia scale can poison the cathode resulting in a considerable drop in performance of the cell. Coatings and surface modifications have been developed in order to mitigate the abovementioned problems. In this study, composite electrodeposition of reactive element containing particles in a metal matrix was considered as a solution to the interconnect problems. Nickel and Co were used as the metal matrix and LaCrO3 particles as the reactive element containing particles. The role of the particles was to improve the oxidation resistance and oxide scale adhesion, while the role of Ni or Co was to provide a matrix for embedding of the particles. Also, oxidation of the Ni or Co matrix led to the formation of conductive oxides. Moreover, as another part of this study, the effect of substrate composition on performance of steel interconnects was investigated. Numerous experimental techniques were used to study and characterise the oxidation behaviour of the composite coatings, as well as the metal-oxide scale interface properties. Scanning electron microscopy/energy dispersive X-ray spectroscopy (SEM/EDX), as well as surface analysis techniques including Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS), were used for the purpose of characterization. The substrate used for coating was AISI-SAE 430 stainless steel that is considered as a typical, formerly used interconnect material. Also, for the purpose of the metal-oxide scale interfacial study, ZMG232 stainless steel that is a specially designed interconnect alloy was used. It is shown that the composite coatings greatly reduce the contact resistance and effectively inhibit Cr outward migration. In addition, it was determined that the presence of impurities in the steel, especially Si, and the absence of reactive elements drastically contribute to interconnect degradation. / Materials Science and Engineering

Wires have become a major source of bottleneck in current VLSI designs, and wire length prediction is therefore essential to overcome these bottlenecks. Wire length prediction is broadly classified into two types: macroscopic prediction, which is the prediction of wire length distribution, and microscopic prediction, which is the prediction of individual wire lengths. The objective of this thesis is to develop a clear understanding of limitations to both macroscopic and microscopic a priori, post-placement, pre-routing wire length predictions, and thereby develop better wire length prediction models. Investigations carried out to understand the limitations to macroscopic prediction reveal that, in a given design (i) the variability of the wire length distribution increases with length and (ii) the use of Rent s rule with a constant Rent s exponent p, to calculate the terminal count of a given block size, limits the accuracy of the results from a macroscopic model. Therefore, a new model for the parameter p is developed to more accurately reflect the terminal count of a given block size in placement, and using this, a new more accurate macroscopic model is developed. In addition, a model to predict the variability is also incorporated into the macroscopic model. Studies to understand limitations to microscopic prediction reveal that (i) only a fraction of the wires in a given design are predictable, and these are mostly from shorter nets with smaller degrees and (ii) the current microscopic prediction models are built based on the assumption that a single metric could be used to accurately predict the individual length of all the wires in a design. In this thesis, an alternative microscopic model is developed for the predicting the shorter wires based on a hypothesis that there are multiple metrics that influence the length of the wires. Three different metrics are developed and fitted into a heuristic classification tree framework to provide a unified and more accurate microscopic model.

Short-distance digital communication links, between chips on a circuit board, or between different circuit boards for example, have traditionally been built by using electrical interconnects - metallic tracks and wires. Recent technological advances have resulted in improvements in the speed of information processing, but have left electrical interconnects intact, thus creating a serious communication problem. Free-space optical interconnects, made up of arrays of vertical-cavity surface-emitting lasers, microlenses, and photodetectors, could be used to solve this problem. If free-space optical interconnects are to successfully replace electrical interconnects, they have to be able to support large rates of information transfer with high channel densities. The biggest obstacle in the way of reaching these requirements is laser beam diffraction. There are three approaches commonly used to model the effects of laser beam diffraction in optical interconnects: one could pursue the path of solving the diffraction integral directly, one could apply stronger approximations with some loss of accuracy of the results, or one could cleverly reinterpret the diffraction problem altogether. None of the representatives of the three categories of existing solutions qualified for our purposes. The main contribution of this dissertation consist of, first, formulating the mode expansion method, and, second, showing that it outperforms all other methods previously used for modelling diffraction in optical interconnects. The mode expansion method allows us to obtain the optical field produced by the diffraction of arbitrary laser beams at empty apertures, phase-shifting optical elements, or any combinations thereof, regardless of the size, shape, position, or any other parameters either of the incident optical field or the observation plane. The mode expansion method enables us to perform all this without any reference or use of the traditional Huygens-Kirchhoff-Fresnel diffraction integrals. When using the mode expansion method, one replaces the incident optical field and the diffracting optical element by an effective beam, possibly containing higher-order transverse modes, so that the ultimate effects of diffraction are equivalently expressed through the complex-valued modal weights. By using the mode expansion method, one represents both the incident and the resultant optical fields in terms of an orthogonal set of functions, and finds the unknown parameters from the condition that the two fields have to be matched at each surface on their propagation paths. Even though essentially a numerical process, the mode expansion method can produce very accurate effective representations of the diffraction fields quickly and efficiently, usually by using no more than about a dozen expanding modes. The second tier of contributions contained in this dissertation is on the subject of the analysis and design of microchannel free-space optical interconnects. In addition to the proper characterisation of the design model, we have formulated several optical interconnect performance parameters, most notably the signal-to-noise ratio, optical carrier-to-noise ratio, and the space-bandwidth product, in a thorough and insightful way that has not been published previously. The proper calculation of those performance parameters, made possible by the mode expansion method, was then performed by using experimentally-measured fields of the incident vertical-cavity surface-emitting laser beams. After illustrating the importance of the proper way of modelling diffraction in optical interconnects, we have shown how to improve the optical interconnect performance by changing either the interconnect optical design, or by careful selection of the design parameter values. We have also suggested a change from the usual 'square' to a novel 'hexagonal' packing of the optical interconnect channels, in order to alleviate the negative diffraction effects. Finally, the optical interconnect tolerance to lateral misalignment, in the presence of multimodal incident laser beams was studied for the first time, and it was shown to be acceptable only as long as most of the incident optical power is emitted in the fundamental Gaussian mode.

Short-distance digital communication links, between chips on a circuit board, or between different circuit boards for example, have traditionally been built by using electrical interconnects -- metallic tracks and wires. Recent technological advances have resulted in improvements in the speed of information processing, but have left electrical interconnects intact, thus creating a serious communication problem. Free-space optical interconnects, made up of arrays of vertical-cavity surface-emitting lasers, microlenses, and photodetectors, could be used to solve this problem. If free-space optical interconnects are to successfully replace electrical interconnects, they have to be able to support large rates of information transfer with high channel densities. The biggest obstacle in the way of reaching these requirements is laser beam diffraction. There are three approaches commonly used to model the effects of laser beam diffraction in optical interconnects: one could pursue the path of solving the diffraction integral directly, one could apply stronger approximations with some loss of accuracy of the results, or one could cleverly reinterpret the diffraction problem altogether. None of the representatives of the three categories of existing solutions qualified for our purposes. The main contribution of this dissertation consist of, first, formulating the mode expansion method, and, second, showing that it outperforms all other methods previously used for modelling diffraction in optical interconnects. The mode expansion method allows us to obtain the optical field produced by the diffraction of arbitrary laser beams at empty apertures, phase-shifting optical elements, or any combinations thereof, regardless of the size, shape, position, or any other parameters either of the incident optical field or the observation plane. The mode expansion method enables us to perform all this without any reference or use of the traditional Huygens-Kirchhoff-Fresnel diffraction integrals. When using the mode expansion method, one replaces the incident optical field and the diffracting optical element by an effective beam, possibly containing higher-order transverse modes, so that the ultimate effects of diffraction are equivalently expressed through the complex-valued modal weights. By using the mode expansion method, one represents both the incident and the resultant optical fields in terms of an orthogonal set of functions, and finds the unknown parameters from the condition that the two fields have to be matched at each surface on their propagation paths. Even though essentially a numerical process, the mode expansion method can produce very accurate effective representations of the diffraction fields quickly and efficiently, usually by using no more than about a dozen expanding modes. The second tier of contributions contained in this dissertation is on the subject of the analysis and design of microchannel free-space optical interconnects. In addition to the proper characterisation of the design model, we have formulated several optical interconnect performance parameters, most notably the signal-to-noise ratio, optical carrier-to-noise ratio, and the space-bandwidth product, in a thorough and insightful way that has not been published previously. The proper calculation of those performance parameters, made possible by the mode expansion method, was then performed by using experimentally-measured fields of the incident vertical-cavity surface-emitting laser beams. After illustrating the importance of the proper way of modelling diffraction in optical interconnects, we have shown how to improve the optical interconnect performance by changing either the interconnect optical design, or by careful selection of the design parameter values. We have also suggested a change from the usual `square' to a novel `hexagonal' packing of the optical interconnect channels, in order to alleviate the negative diffraction effects. Finally, the optical interconnect tolerance to lateral misalignment, in the presence of multimodal incident laser beams was studied for the first time, and it was shown to be acceptable only as long as most of the incident optical power is emitted in the fundamental Gaussian mode.

Short-distance digital communication links, between chips on a circuit board, or between different circuit boards for example, have traditionally been built by using electrical interconnects -- metallic tracks and wires. Recent technological advances have resulted in improvements in the speed of information processing, but have left electrical interconnects intact, thus creating a serious communication problem. Free-space optical interconnects, made up of arrays of vertical-cavity surface-emitting lasers, microlenses, and photodetectors, could be used to solve this problem. If free-space optical interconnects are to successfully replace electrical interconnects, they have to be able to support large rates of information transfer with high channel densities. The biggest obstacle in the way of reaching these requirements is laser beam diffraction. There are three approaches commonly used to model the effects of laser beam diffraction in optical interconnects: one could pursue the path of solving the diffraction integral directly, one could apply stronger approximations with some loss of accuracy of the results, or one could cleverly reinterpret the diffraction problem altogether. None of the representatives of the three categories of existing solutions qualified for our purposes. The main contribution of this dissertation consist of, first, formulating the mode expansion method, and, second, showing that it outperforms all other methods previously used for modelling diffraction in optical interconnects. The mode expansion method allows us to obtain the optical field produced by the diffraction of arbitrary laser beams at empty apertures, phase-shifting optical elements, or any combinations thereof, regardless of the size, shape, position, or any other parameters either of the incident optical field or the observation plane. The mode expansion method enables us to perform all this without any reference or use of the traditional Huygens-Kirchhoff-Fresnel diffraction integrals. When using the mode expansion method, one replaces the incident optical field and the diffracting optical element by an effective beam, possibly containing higher-order transverse modes, so that the ultimate effects of diffraction are equivalently expressed through the complex-valued modal weights. By using the mode expansion method, one represents both the incident and the resultant optical fields in terms of an orthogonal set of functions, and finds the unknown parameters from the condition that the two fields have to be matched at each surface on their propagation paths. Even though essentially a numerical process, the mode expansion method can produce very accurate effective representations of the diffraction fields quickly and efficiently, usually by using no more than about a dozen expanding modes. The second tier of contributions contained in this dissertation is on the subject of the analysis and design of microchannel free-space optical interconnects. In addition to the proper characterisation of the design model, we have formulated several optical interconnect performance parameters, most notably the signal-to-noise ratio, optical carrier-to-noise ratio, and the space-bandwidth product, in a thorough and insightful way that has not been published previously. The proper calculation of those performance parameters, made possible by the mode expansion method, was then performed by using experimentally-measured fields of the incident vertical-cavity surface-emitting laser beams. After illustrating the importance of the proper way of modelling diffraction in optical interconnects, we have shown how to improve the optical interconnect performance by changing either the interconnect optical design, or by careful selection of the design parameter values. We have also suggested a change from the usual `square' to a novel `hexagonal' packing of the optical interconnect channels, in order to alleviate the negative diffraction effects. Finally, the optical interconnect tolerance to lateral misalignment, in the presence of multimodal incident laser beams was studied for the first time, and it was shown to be acceptable only as long as most of the incident optical power is emitted in the fundamental Gaussian mode.

abstract: Programmable metallization cell (PMC) technology is based on an electrochemical phenomenon in which a metallic electrodeposit can be grown or dissolved between two electrodes depending on the voltage applied between them. Devices based on this phenomenon exhibit a unique, self-healing property, as a broken metallic structure can be healed by applying an appropriate voltage between the two broken ends. This work explores methods of fabricating interconnects and switches based on PMC technology on flexible substrates. The objective was the evaluation of the feasibility of using this technology in flexible electronics applications in which reliability is a primary concern. The re-healable property of the interconnect is characterized for the silver doped germanium selenide (Ag-Ge-Se) solid electrolyte system. This property was evaluated by measuring the resistances of the healed interconnect structures and comparing these to the resistances of the unbroken structures. The reliability of the interconnects in both unbroken and healed states is studied by investigating the resistances of the structures to DC voltages, AC voltages and different temperatures as a function of time. This work also explores replacing silver with copper for these interconnects to enhance their reliability. A model for PMC-based switches on flexible substrates is proposed and compared to the observed device behavior with the objective of developing a formal design methodology for these devices. The switches were subjected to voltage sweeps and their resistance was investigated as a function of sweep voltage. The resistance of the switches as a function of voltage pulse magnitude when placed in series with a resistance was also investigated. A model was then developed to explain the behavior of these devices. All observations were based on statistical measurements to account for random errors. The results of this work demonstrate that solid electrolyte based interconnects display self-healing capability, which depends on the applied healing voltage and the current limit. However, they fail at lower current densities than metal interconnects due to an ion-drift induced failure mechanism. The results on the PMC based switches demonstrate that a model comprising a Schottky diode in parallel with a variable resistor predicts the behavior of the device. / Dissertation/Thesis / Ph.D. Electrical Engineering 2011

abstract: This dissertation presents methods for addressing research problems that currently can only adequately be solved using Quality Reliability Engineering (QRE) approaches especially accelerated life testing (ALT) of electronic printed wiring boards with applications to avionics circuit boards. The methods presented in this research are generally applicable to circuit boards, but the data generated and their analysis is for high performance avionics. Avionics equipment typically requires 20 years expected life by aircraft equipment manufacturers and therefore ALT is the only practical way of performing life test estimates. Both thermal and vibration ALT induced failure are performed and analyzed to resolve industry questions relating to the introduction of lead-free solder product and processes into high reliability avionics. In chapter 2, thermal ALT using an industry standard failure machine implementing Interconnect Stress Test (IST) that simulates circuit board life data is compared to real production failure data by likelihood ratio tests to arrive at a mechanical theory. This mechanical theory results in a statistically equivalent energy bound such that failure distributions below a specific energy level are considered to be from the same distribution thus allowing testers to quantify parameter setting in IST prior to life testing. In chapter 3, vibration ALT comparing tin-lead and lead-free circuit board solder designs involves the use of the likelihood ratio (LR) test to assess both complete failure data and S-N curves to present methods for analyzing data. Failure data is analyzed using Regression and two-way analysis of variance (ANOVA) and reconciled with the LR test results that indicating that a costly aging pre-process may be eliminated in certain cases. In chapter 4, vibration ALT for side-by-side tin-lead and lead-free solder black box designs are life tested. Commercial models from strain data do not exist at the low levels associated with life testing and need to be developed because testing performed and presented here indicate that both tin-lead and lead-free solders are similar. In addition, earlier failures due to vibration like connector failure modes will occur before solder interconnect failures. / Dissertation/Thesis / Ph.D. Industrial Engineering 2012