In this work, a new condensed matter approach to the study of excitons based on crystalline thin films of the organic molecule phthalocyanine is introduced. The premise is inspired by a wealth of studies in inorganic semiconductor ternary alloys (such as AlGaN, InGaN, SiGe) where tuning compositional disorder can result in exciton localization by alloy potential fluctuations. Comprehensive absorption, luminescence, linear dichroism and electron radiative lifetime studies were performed on both pure and alloy samples of metal-free octabutoxy-phthalocyanine and transition metal octabutoxy-phthalocyanines, where the metal is Mn, Co, Ni, and Cu. Varying the ratios of the metal to metal-free phthalocyanines in all of these studies, as well as looking across a temperature range from 4 Kelvin up to room temperature is essential for quantifying the exciton wavefunction delocalization in crystalline thin films. A comparative study is performed across organic aromatic ringed molecules of different sizes in the same family: phthalocyanine, naphthalocyanine and tetra-phenyl porphyrin. In an analogy to nanocrystals and their size effects, variations in pi-conjugated ring sizes imply an altering in the number of delocalized electrons, impacting the wavefunction overlap between pi-pi orbitals along the perpendicular axis of neighboring molecules. Finally, complementary measurements that assess crystallinity of the in-house deposited thin films, including individual grain absorption, small angle x-ray scattering images, polarized microscope images and a new unique linear dichroism microscopy dual imaging/luminescence technique are also discussed.

This thesis improves our understanding of the charge-transfer dynamics in organic materials employed in dye-sensitized and nanotube-thiophene solar cells. For the purpose of this work, a femtosecond transient absorption spectroscopy setup was built. Additionally, microsecond transient absorption spectroscopy was utilised to explore dynamics on a longer time-scale. In the first study, the dependence of dye regeneration and charge collection on the pore- filling fraction (PFF) in solid-state dye-sensitized solar cells (DSSCs) is investigated. It is shown that while complete hole transfer with PFFs as low as ~30% can be achieved, improvements beyond this PFF are assigned to a stepwise increase in the charge-collection efficiency in agreement with percolation theory. It is further predicted that the chargecollection efficiency saturates at a PFF of ~82%. The study is followed by an investigation of three novel hole-transporting materials for DSSCs with slightly varying HOMO levels to systematically explore the possibility of reducing the loss-in-potential and thus improving the device efficiency. It is shown that despite one new HTM showing a 100% hole-transfer yield, all devices based on the new HTMs performed worse than those incorporating spiro-OMeTAD. Furthermore, it is demonstrated that the design of the HTM has an additional impact on the electronic density of states present at the TiO₂ electrode surface, and hence influences not only hole- but also electron-transfer from the sensitizer. Finally, a study on a polymer-single-walled carbon nanotube (SWNT) molecular junction is presented. Results from femtosecond spectroscopic techniques show that the polymer poly(3-hexylthiophene) (P3HT) is able to transfer charges to the SWNT within 430 fs. Addition of excess P3HT polymer leads to long-lived free charges making these materials a viable option for solar cells.

To better understand the physical and electronic properties of donor and acceptor-based structures used in organic electronic applications, a variety of oligothiophene and naphthalene diimide-based small conjugated molecules were designed, synthesized, and characterized. The materials were initially synthesized using oxidative copper-chloride coupling reactions, palladium-catalyzed amination reactions, Friedal-Crafts acylations, Negishi coupling reactions, and Stille coupling reactions. Once isolated, the physical properties of the compounds were characterized through a combination of X-ray crystal structure, thermogravimetric analysis, differential scanning calorimetry, UV-vis. absorption spectroscopy, cyclic voltammetry, and differential pulse voltammetry, along with comparison to quantum-chemical calculations. In some cases, the radical cations or radical anions were generated by chemical oxidation and analyzed by vis-NIR spectroscopy. Furthermore, the electronic properties of the materials were investigated through incorporation as solution-processed active layers in organic field-effect transistors. Multiple examples exhibited hole- and / or electron-transport properties with electron mobility values of up to 1.5 cm²V⁻¹s⁻¹, which is among the highest yet reported for an n-channel OFET based on a solution-processed small molecule.

Conjugated polymers comprise some of the most promising materials for new technologies such as organic field effect transistors, solar light harvesting technology and sensing devices. In spite of tremendous research initiatives in materials chemistry, the potential to optimize device performance and develop new technologies is remarkable. Understanding relationships between the structure of conjugated polymers and their electronic properties is critical to improving device performance. The design and synthesis of new materials which self-organize into ordered nanostructures creates opportunities to establish relationships between electronic properties and morphology or molecular packing. This thesis details our progress in the development of synthetic routes which provide access to new classes of conjugated polymers that contain dissimilar side chains that segregate or dissimilar conjugated blocks which phase separate, and summarizes our initial attempts to characterize these materials. Poly(1,4-phenylene ethynylene)s (PPEs) have been used in a variety of organic electronic applications, most notably as fluorescent sensors. Using traditional synthetic methods, asymmetrically disubstituted PPEs have irregular placement of side chains on the conjugated backbone. Herein, we establish the first synthetic route to an asymmetrically substituted regioregular PPEs. The initial PPEs in this study have different lengths of alkoxy side chains, and both regioregular and regiorandom analogs are synthesized and characterized for comparison. The design of amphiphilic structures provides additional opportunities for side chains to influence the molecular packing and electronic properties of conjugated polymers. A new class of regioregular, amphiphilic PPEs has been prepared bearing alkoxy and semifluoroalkoxy side chains, which have a tendency to phase separate. Fully conjugated block copolymers can provide access to interesting new morphologies as a result of phase separation of the conjugated blocks. In particular, donor-acceptor block copolymers that phase separate into electron rich and electron poor domains may be advantageous in organic electronic devices such as bulk heterojunction solar cells, of which the performance relies on precise control of the interface between electron donating and accepting materials. The availability of donor-acceptor block copolymers is limited, largely due to the challenges associated with synthesizing these materials. In this thesis, two new synthetic routes to donor-acceptor block copolymers are established. These methods both utilize the catalyst transfer condensation polymerization, which proceeds by a chain growth mechanism. The first example entails the synthesis of a monofunctionalized, telechelic poly(3-alkylthiophene) which can be coupled to electron accepting polymers in a subsequent reaction. The other method describes the first example of a one-pot synthesis of a donor-acceptor diblock copolymer. The methods of synthesis are described, and characterization of the block copolymers is reported.

The electronics industry today is one that stands as a multi-billion dollar industry that is increasingly incorporating more and more products that have ever escalating applications in our everyday life. One of the main sectors of this industry, and one that is likely to continue expanding for a considerable number of years are flat-panel displays. Traditionally, the displays market has been dominated by cathode ray tube (CRT) and liquid crystal displays (LCDs) display types. The drawback of such display displays is that they can be bulky, heavy and/or expensive and so there is considerable room for an alternative and superior technology. One possibility is organic semiconductor displays where light-emitting molecules can be dissolved in common solvents before being inkjet printed, spin-coated or even painted onto any surface giving the benefits of simple and cost effective processing. Organic light-emitting diodes (OLEDs) have recently become ever more evident as a major display type. This thesis focuses on the advancement of light-emitting dendrimers towards flat-panel display applications. The particular interest in dendrimers arises because it has been found they are capable of giving solution-processed phosphorescent devices with high efficiency. Throughout the thesis the benefits of the dendrimer concept are repeatedly shown revealing why this could become the ideal organic material for display applications. The thesis introduces various techniques of electroluminescence and photoluminescence measurements before applying such methods to study a large number of light-emitting dendrimers in order to explore the role of intermolecular interactions, how they are related to molecular structure, and how this determines photophysical and charge transporting properties of the dendrimers. By such studies a number of highly efficient solution-processed phosphorescent light-emitting dendrimers have been identified while the efficiency of devices made from these dendrimers has been improved. This has been demonstrated in each of the three primary display colours of red, green and blue. The work detailed thus brings closer the prospect of dendrimer light-emitting diodes being the future flat-panel display type of choice.

The charge-density-wave (CDW) material orthorhombic tantalum trisulfide (TaS3) is a quasi-one dimensional material that forms long ribbon shaped crystals, and exhibits unique physical behavior. We have measured the dependence of the hysteretic voltage-induced torsional strain (VITS) in TaS3, which was first discovered by Pokrovskii et. al. in 2007, on temperature and applied torque. Our experimental results shows that the application of torque to the crystal could also change the VITS time constant, magnitude, and sign. This suggests that the VITS is a consequence of residual torsional strain originally present in the sample which twists the polarizations of the CDW when voltage is applied. This polarization twist then results in torque on the crystal. Another group of materials that may attract interest is that of small-molecule soluble organic semiconductors. Due to their assumed small phonon thermal conductivities and higher charge carrier mobilities, which will increase their seebeck coefficients with doping as compared to polymers, the small-molecule organic materials are promising for thermoelectric applications. In our experiments, we have measured the interlayer thermal conductivity of rubrene (C42H28), using ac-calorimetry. For rubrene, we find that the interlayer thermal conductivity, ≈ 0.7 mW/cm·K, is several times smaller than the (previously measured) in-plane value. Also, we have measured the interlayer and in-plane thermal conductivities of 6,13-bis((triisopropylsilyl)ethynyl) pentacene (TIPS-Pn). The in-plane value is comparable to that of organic metals with excellent π-orbital overlap. The interlayer (c-axis) thermal diffusivity is at least an order of magnitude larger than the in-plane, and this unusual anisotropy implies very strong dispersion of optical modes in the interlayer direction, presumably due to interactions between the silyl-containing side groups. Similar values for both in-plane and interlayer conductivities have been observed for several other functionalized pentacene semiconductors with related structures.

Molecular doping is a key technique for realizing high efficient organic light-emitting diodes (OLEDs) and photovoltaics (OPV). Furthermore, its most recent application in organic field-effect transistors (OFETs) marks a milestone on the roadmap towards flexible organic CMOS technology. However, in contrast to silicon based devices, the understanding of the fundamental processes of molecular doping is still controversially discussed. This work aims at the detailed analysis of the molecular doping process by employing Photoelectron spectroscopy (PES) on various doped thin-films prepared by co-evaporation in vacuum. Here, the focus is on explanation of the experimental findings by a statistical description in order to contribute to the fundamental understanding of the doping mechanism. First, the Fermi level shifts in thin-films of the common hole transport materials MeO-TPD, ZnPc, and pentacene p-doped by the acceptors C60F36 and F6-TCNNQ are studied. The precise control of molar doping ratios as low as 1e−5 is demonstrated, allowing analysis of the doping properties in a much broader range as previously accessible. Characteristic kinks and slopes in the Fermi level vs. doping concentration diagrams are found. Furthermore, the doping efficiency is found to decrease with increasing doping concentrations to just a few percent at molar ratios above 0.1. By numerically solving the charge neutrality equation using a classical semiconductor physics approach, these findings are explained by trap-limitation, dopant saturation, and reserve regimes as known from inorganic semiconductor physics. Using the example of p-doped MeO-TPD thin-films, it is finally demonstrated that the density of deep gap states depends on the purity degree of the host material. Similar studies are conducted on thin-films of C60, ZnPc, and pentacene n-doped by the di-metal complex W2(hpp)4. The corresponding Fermi level plots possess also host material specific kinks and slopes, which however, can be explained by application of the statistical doping description and assuming just dopant saturation and trap-limitation. Furthermore, it is demonstrated that electron traps with defined density can intentionally be introduced in pentacene by co-evaporation of C60 and gradually filled-up by n-doping with W2(hpp)4. In contrast to p-dopants, the highly efficient n-dopant W2(hpp)4 is prone to degradation in air due to its low IP of just 2.4eV. Therefore, the degradation of pure films of W2(hpp)4 as well as of n-doped films applying various host materials is studied under air exposure by conductivity measurements and PES. An unexpected (partial) passivation of W2(hpp)4 molecules against oxidation is found, however, this effect is identified to depend on the energy levels of the used host material. This finding is explained by a down-shift of the W2(hpp)4 energy levels upon charge transfer to a host material with deeper lying energy levels and thus allows for new conclusions on the relative alignment of the energy levels of dopant and host molecules in doped films in general. The maximum open-circuit voltage Voc of BHJ solar cells is limited by the effective HOMO(donor)-LUMO(acceptor) gap of the photo-active absorber blend. Therefore, the relative energy levels within ZnPc:C60 blend layers are furthermore investigated by PES, identifying an increase of the HOMO(ZnPc)-LUMO(C60) gap by 0.25 eV when varying the blend stoichiometry from 6:1 to 1:6. The trend in this gap correlates with observed changes in Voc of respective BHJ solar cells as well as with measured charge transfer energies. As physical origins for the changed energy levels, a suppressed crystallization of the C60 phase due to presence of donor molecules as well as concentration-dependent growth modes of the ZnPc phase are discussed.

This thesis is about the development and validation of a numerical model for the simulation of the current-voltage characteristics of organic thin-film devices. The focus is on the analysis of a white organic light-emitting diode (OLED) with fluorescent blue and phosphorescent red and green emitters. The simulation model describes the charge transport as a one-dimensional drift-diffusion current and is developed on the basis of the Scharfetter-Gummel method. It incorporates modern theories for the charge transport in disordered organic materials, which are considered by means of special functions for the diffusion coefficient and the charge-carrier mobility. The algorithm is designed such that it can switch between different models for mobility and calculates both transient and steady-state solutions. In the analysis of the OLED, electron and hole transport are investigated separately in series of single-carrier devices. These test devices incorporate parts of the layers in the OLED between symmetrically arranged injection layers that are electrically doped. Thereby, the OLED layer sequence is reconstructed step by step. The analysis of the test devices allows to obtain the numerous parameters which are required for the simulation of the complete OLED and reveals many interesting features of the OLED. For instance, it is shown how the accumulation of charge carriers in front of an interface barrier increases the mobility and the transfer rate across the interface. Furthermore, it is demonstrated how to identify charge-trapping states. This leads to the detection of deep trap states in the emission zone of the OLED -- an interesting aspect, since these states can function as recombination centers and may cause non-radiative losses. Moreover, various other effects such as interface dipoles and a slight freeze-out of active electric dopants in the injection layers are observed. In the simulations of the numerous test devices, the parameters are consistently applied. Thereby, the agreement between simulation and experiment is excellent, which demonstrates the correctness and applicability of the developed model. Finally, the complete OLED is successfully simulated on the basis of the parameters that have been obtained in the analysis of the single-carrier devices. The simulation of the OLED illustrates the transport levels of electrons and holes, and proofs that the OLED efficiency is low because of non-radiative recombination in the interlayer between the phosphorescent and fluorescent emission zones. In this context, many interesting issues are discussed, e.g. the applicability of the Langevin model in combination with the mobility models for the description of recombination and the relevance of interactions between free charge carriers and excitons.

Using photoelectron spectroscopy, we show measurements of energy level alignment of organic semiconducting layers. The main focus is on the properties and the influence of doped layers. The investigations on the p-doping process in organic semiconductors show typical charge carrier concentrations up to 2*10E20 cm-3. By a variation of the doping concentration, an over proportional influence on the position of the Fermi energy is observed. Comparing the number of charge carriers with the amount of dopants present in the layer, it is found that only 5% of the dopants undergo a full charge transfer. Furthermore, a detailed investigation of the density of states beyond the HOMO onset reveals that an exponentially decaying density of states reaches further into the band gap than commonly assumed. For an increasing amount of doping, the Fermi energy gets pinned on these states which suggests that a significant amount of charge carriers is present there. The investigation of metal top and bottom contacts aims at understanding the asymmetric current-voltage characteristics found for some symmetrically built device stacks. It can be shown that a reaction between the atoms from the top contact with the molecules of the layer leads to a change in energy level alignment that produces a 1.16eV lower electron injection barrier from the top. Further detailed investigations on such contacts show that the formation of a silver top contact is dominated by diffusion processes, leading to a broadened interface. However, upon insertion of a thin aluminum interlayer this diffusion can be stopped and an abrupt interface is achieved. Furthermore, in the case of a thick silver top contact, a monolayer of molecules is found to float on top of the metal layer, almost independent on the metal layer thickness. Finally, several device stacks are investigated, regarding interface dipoles, formation of depletion regions, energy alignment in mixed layers, and the influence of the built-in voltage. We show schematic energy level alignments of pn junctions, pin homojunctions, more complex pin heterojunctions with Zener-diode characteristics, as well as a complete OLED stack. The results allow a deeper insight in the working principle of such devices. / Mit Hilfe der Photoelektronenspektroskopie werden in der vorliegenden Arbeit Energieniveaus an Grenzflächen von organischen Halbleitern untersucht, wobei ein Hauptaugenmerk auf dem Einfluss und den Eigenschaften dotierter Schichten liegt. Bei der Untersuchung grundlegender Eigenschaften eines p-dotierten organischen Halbleiters können Ladungsträgerkonzentrationen bis zu 2*10E20 cm-3 nachgewiesen werden. Eine Variation der Dotierkonzentration zeigt einen überproportionalen Einfluss der Ladungsträger auf die Position des Ferminiveaus verglichen mit Experimenten an anorganischen Schichten. Durch den Vergleich mit der Anzahl Dotanden in der Schicht kann gezeigt werden, dass dabei nur etwa 5% der Dotanden einen vollständigen Ladungstransfer eingehen. Eine detaillierte Untersuchungen der Zustandsdichte jenseits des HOMOs (Highest Occupied Molecular Orbital) zeigt, dass die exponentiell abfallende Flanke der Zustandsdichte weiter in die Bandlücke hineinreicht als üblicherweise angenommen. Das Ferminiveau erfährt bei steigender Dotierung ein Pinning an diesen Zuständen, was für eine signifikante Ladungsträgerkonzentration spricht. Weiterhin wurden Untersuchungen zu Metal Top- und Grundkontakten durchgeführt. Es kann gezeigt werden, dass die Ursache für die Entstehung unsymmetrischer Strom-Spannungskurven, trotz eines symmetrischen Probenaufbaus, an einer Reaktion zwischen dem Molekül und den Metallatomen liegt. Dadurch entsteht eine um 1.16eV reduzierte Injektionsbarriere für Elektronen am Topkontakt. Weitere detaillierte Untersuchungen an diesen Topkontakten zeigen, dass im Falle von Silber als Metall diese Grenzfläche von Diffusionsprozessen dominiert ist. Im Gegensatz dazu zeigt das unedle Metall Aluminium keine Diffusion und führt zu abrupten Grenzflächen. Im ersten Fall kann zudem eine Monolage vom Molekül auf dem Metallkontakt nachgewiesen werden, die unabhängig von der Metalldicke aufschwimmt. Zuletzt werden Bauelemente oder Teile solcher mit Photoelektronenspektroskopie vermessen. Hierbei werden die Grenzflächendipole, die Ausbildung von Verarmungszonen, die Energieangleichung in Mischschichten und der Einfluss der Eingebauten Spannung untersucht. Es können die Banddiagramme von pn-Übergängen, einfachen pin Homoübergängen, komplexeren pin Heteroübergänge mit Zener-Dioden Verhalten sowie eine gesamte OLED gezeigt werden. Die Ergebnisse erlauben einen tieferen Einblick in die Arbeitsweise solcher Bauelemente.

Avec la demande sans cesse renouvelée de matériaux éco-compatibles pour l’électronique de demain, les polymères conducteurs se sont imposés comme une alternative intéressante aux matériaux déjà existants. Ils doivent leur popularité principalement à leurs propriétés électriques, optoélectroniques, thermo-chromiques, luminescentes et mécaniques, couplées à leur bonne processabilité et leur faible impact environnemental. Parmi eux, le poly(3,4-ethylenedioxythiophene) (PEDOT) est certainement le plus connu est le plus utilisé. De nombreuses études se sont focalisées sur l’optimisation de sa conductivité électrique et des progrès remarquables ont été réalisés. Cependant, la compréhension fine de la relation structure/propriétés de ce matériau reste à élucider. C’est ainsi que dans le cadre de cette thèse nous avons décidé de plusieurs objectifs qui sont (1) la synthèse de PEDOT hautement conducteurs à structure contrôlée et optimisée, (2) l’étude des propriétés électriques, structurales et de transport électroniques dans ces PEDOT, (3) l’étude de leurs propriétés thermoélectriques et (4) l’étude de leur stabilité sous différentes conditions afin de valider leurs potentielles applications. Ainsi, après une revue de la littérature sur le PEDOT, nous étudions l’amélioration de la conductivité électrique du PEDOT:OTf et du PEDOT:Sulf, qui atteint dorénavant des valeurs à hauteur de 5400 S cm-1. Différentes techniques de caractérisation nous ont permis de mener une étude exhaustive de leurs propriétés électriques et structurales ainsi que des mécanismes de transport électronique qui en découlent. Nous nous sommes ensuite intéressés à deux de leurs propriétés thermoélectriques, l’effet Joule et l’effet Seebeck, le premier pour des applications en chauffage et le deuxième pour la récupération d’énergie. L’utilisation pour la première fois du PEDOT comme film chauffant flexible transparent est d’ailleurs présentée. On démontre par exemple que PEDOT:Sulf présente une résistance carrée de 57 Ω sq-1 pour 87.8 % de transparence et qu’une température de 138 °C peut être atteinte lorsqu’on applique 12 V. Cette thèse se conclut sur l’étude de la stabilité de nos matériaux de PEDOT sous différentes atmosphères ainsi que l’étude des mécanismes de dégradation. / With the rising demand of flexible, low cost and environmentally friendly materials for future technologies, organic materials are becoming an interesting alternative to already existing inorganic ones. Organic photovoltaics, organic light emitting diodes, organic field effect transistors, organic thermoelectricity, organic transparent electrodes are all evidences of how organic materials are sought for tomorrow. Materials which can fulfill the requirements specifications of future technologies are conducting polymers, which owe their popularity to their outstanding electrical, optoelectronic, thermochromic, lighting and mechanical properties. Moreover, they exhibit good processability even on flexible substrates and low environmental impact. Poly(3,4-ethylenedioxythiophene) (PEDOT) is certainly the most known and most used conducting polymer because it is commercially available and shows great potential for organic electronics. Studies dedicated to PEDOT films have led to high conductivity enhancements. However, an exhaustive understanding of the mechanisms governing such enhancement is still lacking, hindered by the semi-crystalline nature of the material itself. In such a context, this thesis has four objectives which are (1) the synthesis of PEDOT materials with an optimized and controlled structure to enhance the electrical properties, (2) the thorough characterization of the as-synthesized PEDOT in order to understand the charge transport mechanisms, (3) the study of their thermoelectric properties and (4) the study of their stability under different environments and stresses. Thus, after a literature review on PEDOT materials, we present the enhancement of the electrical conductivity of PEDOT:OTf and PEDOT:Sulf up to 5400 S cm-1 via a structure and dopant engineering, and then thoroughly study their electrical and electronic transport properties. Subsequently, two thermoelectric properties of PEDOT are investigated, namely its resistive Joule heating ability and its Seebeck effect, for both heating and energy harvesting applications. A novel application of PEDOT as flexible transparent heater is demonstrated in the first case. PEDOT:Sulf for example exhibited a sheet resistance of 57 Ω sq-1 at 87.8 % transmittance and reached a steady state temperature of 138 °C under 12 V bias. Finally, this thesis is concluded with the ageing and stability of our PEDOT based materials under different environmental stresses. While PEDOT is stable under mild conditions, heavy degradations can occur under harsh conditions. The degradation mechanisms are then investigated in this last part.