The thesis investigates the potential of thin films of Ta, Ti and W and their nitrides to suppress copper induced interactions in the contact area to silicon. Possible interactions between Cu and gaseos or solid materials within preparation and lifetime of an integrated circuit are summarized. The degradation mechanisms to be expected are the solution of Cu in Si and the formation of Cu3Si. Thin conductive diffusion barriiers are needed to suppress this mechanisms. The requirements on these barriers are discussed. The most important criterion, their resistivity, is determined by the place of application. The resitivity has to be lower than 100 mOhmcm for contacts and lower than 2000 mikroOhmcm for vias. The materials to be separated by a diffusion barrier can pass it by diffusion or the diffusion barrier can be destroyed by reaction (reactive diffusion). Therefore one can distinguish in passive and sacrificial barriers. The thin films were prepared by magnetron sputtering in Ar or Ar/N2 mixture. The films were characterized with respect to composition, phase/structure as well as their resulting electrical, optical, and mechanical properties. The appearance of new phases correlates with changes in process parameters like target voltage and condensation rate. All films - except for a small process window for amorphous/nanocrystalline WNx films - are polycrystalline. The influence of annealing steps in different ambients is investigated. Amorphous/nanocrystalline WNx films do recrystallize during annealing. For a direct contact of Cu to Si a sufficient energy supply during Cu depotsition or during following annealing (T> 200 °C) results in the formation of Cu3Si. The potential of diffusion barriers of different thicknesses and nitrogen contents to suppress this reaction is investigated for annealing steps up to 650 C. The characterization is performed by analytical methods, sheet resistance measurements as well as leakage current measurements (pn, np and schottky diodes). A diffusion barrier is able to suppress the Cu3Si formation, until itself is consumed by silicidation or intermetallic phase formation. The metal nitrides are more stable, since the present metal nitrogen bonding has to be broken before these reactions can start. With the failure of a diffusion barrier a Cu Si contact occurs with the consequence of copper silicide formation. The silicidation can be either homogeneous (on a large area) or in the form of crystallites several mikrometers in diameter. The distance between the crystallites is up to several 100 mikrometers. It is shown, that results of a barrier evaluation can be paradox if different methods are applied to the same sample. The diffusion of Cu accross a barrier into Si can be shown using analytical methods, already before the formation of Cu3Si. However, the leakage current of pn or schottky diodes is not or not unequivocal modified by this diffusion. The leakage current does not change before the diodes are shorted by the Cu3Si formation. The results of parallel prepared references with Al metallization show, that the diffusion barriers are more stable in a Cu metallization than in an Al metallization. (copying allowed) new: pdf version 1.4 / Die Arbeit beschreibt das Potential von Schichten des Ta, Ti, W und ihrer Nitride zur Unterdrückung kupferinduzierter Degradationen im Kontakt zu Silicium. Mögliche Wechselwirkungen zwischen Cu und den im Herstellungsprozess sowie der Lebensdauer von Schaltkreisen präsenten Gasen und Feststoffen werden zusammengestellt. Für das System Cu-Si sind als Degradationsmechanismen die Lösung von Cu und die Cu3Si Bildung zu erwarten. Die Anforderungen an die zur Unterdrückung der Degradationen notwendigen leitfähigen Diffusionsbarrieren werden diskutiert. Ihr spezifischer elektrischer Widerstand als wichtigstes Kriterium für die Integration wird vom Einsatzort bestimmt. Er muss für Kontakte unter 100 mOhm cm und für Vias unter 2000 mikroOhmcm liegen. Diffusionsbarrieren können von den zu trennenden Materialien durch Diffusion überwunden oder durch Reaktion (reaktive Diffusion) aufgezehrt werden. Damit kann in passive und Opferbarrieren unterschieden werden. Die Schichtherstellung erfolgt mit dem Verfahren der Magnetronzerstäubung in Ar oder Ar/N2 Atmosphäre. Sie werden hinsichtlich ihrer Zusammensetzung, Phase/Struktur sowie resultierender elektrischer, optischer und mechanischer Eigenschaften charakterisiert. Das Auftreten neuer Phasen korreliert mit Verlaufsänderungen einfach zugänglicher Prozessparameter wie Targetspannung und Kondensationsrate. Alle Schichten mit Ausnahme eines engen Prozessfensters für amorphes/nanokristallines WNx sind polykristallin. Der Einfluss von Temperungen in verschiedenen Medien wird untersucht. Amorphe/nanokristalline WNx Schichten rekristallisieren während Temperung. Für direkten Kontakt Cu zu Si führt ausreichende Energiezufuhr schon während der Abscheidung oder während nachfolgender Temperung (T > 200 °C) zur Cu3Si Bildung. Das Potential der Diffusionsbarrieren zur Unterdrückung dieser Reaktion wird für unterschiedliche Dicken und Stickstoffgehalte nach Temperungen bis maximal 650 C untersucht. Dazu werden analytische Methoden, Schichtwiderstandsmessungen und Sperrstromdichtemessungen an pn, np und Schottkydioden eingesetzt. Die Diffusionsbarrieren können die Cu3Si Bildung unterdrücken, bis sie selbst durch Silicierung und/oder intermetallische Phasenbildung aufgezehrt sind. Die Nitride der Metalle sind thermisch stabiler, weil Metall Stickstoff Bindungen erst aufgebrochen werden müssen. Mit dem Versagen der Barrieren treffen Cu und Si zusammen - mit der Folge der Kupfersilicidbildung. Sie kann grossflächig oder in Form mikrometergrosser und einige 100 mikrometer voneinander entfernt liegender Kristallite stattfinden. Für beide Degradationsmechanismen kann gezeigt werden, dass eine Barrierebewertung für unterschiedliche Methoden paradoxe Ergebnisse liefern kann. Die Cu Diffusion über die Diffusionsbarriere in das Si kann mit analytischen Methoden schon vor der Cu3Si Bildung nachgewiesen werden. Der Sperrstrom von pn oder Schottkydioden wird dadurch nicht bzw. nicht eindeutig verändert. Er reagiert erst, wenn sie durch Cu3Si Wachstum kurzgeschlossen sind. Ergebnisse parallel präparierter Referenzen mit Al Metallisierung belegen, dass die Diffusionsbarrieren gegen Cu gleich oder besser wirken als gegen Al. (Kopiermöglichkeit) neu: PDF-Version 1.4

Die Arbeit beschreibt die Anfertigung eines speziellen SOI-Substrates, bei dem eine strukturierte Kobaltdisilizidschicht zwischen dem vergrabenen Oxid und der Silizium- Bauelementeschicht angeordnet ist. Dieses soll für die gemeinsame Integration bipolarerer und unipolarerer Bauelemente auf einem SOI-Substrat im Bereich der Höchstfrequenztechnik Anwendung finden. Verschiedene Technologien zur Herstellung von SOI-Substraten sowie deren Eigenschaften werden vorgestellt und in Hinblick auf eine mögliche Anwendung diskutiert. Schließlich wurden die konventionellen Technologien, Bond and Etchback SOI (BESOI) und wasserstoffinduzierte Delamination (SmartCut®), als geeignet ausgewählt. Es wurden erstmalig durchgängige Technologiekonzepte erarbeitet, welche die Prozesse zur SOI- Substratfertigung und die Teilschritte zur Herstellung hochwertiger Kobaltdisilizidschichten mittels des Kobalt-Salicide-Prozesses enthalten. Schwerpunkte bei der Silizidherstellung waren die Metallabscheidung mit sehr guter Homogenität sowie die zur Silizierung notwen-digen Hochtemperaturprozesse. Weiterhin wurde ein nasschemischer Prozess entwickelt, welcher das Ätzen der Ausgangsmetalle, selektiv zur entstehenden Silizidschicht, ermöglicht. Ein Schlüsselprozess in beiden Technologien ist das Waferbonden, welches in Hinblick auf Funktionalität und Fehlerfreiheit optimiert wurde. Für den BESOI-Prozess ist das Wafergrinden die kritische Technologie. Dabei war es vor allem notwendig, eine optimale Restsiliziumdicke zu finden. Bei der SmartCut®-Technologie stellte die Wasserstoffionen-implantation durch abwechselnde Gebiete mit und ohne Silizid mit der gleichen Reichweite der implantierten Ionen eine große Herausforderung dar. Die Grenzfläche zwischen dem Kobaltdisilizid und dem Silizium der Bauelementeschicht ist bei Verwendung des konventionellen Kobalt-Salicide-Prozesses zu rau für die Anwendung als vergrabenes Silizid in einem SOI-Substrat. Durch Modifikation von Prozessparametern und durch die Anordnung verschiedener Schichten zwischen Silizium und Kobalt während der Silizidherstellung wurde versucht, eine Verbesserung der Grenzflächenqualität zu erzielen. Mit der Verwendung einer polykristallinen Siliziumzwischenschicht gelang es schließlich, die Rauhigkeitswerte signifikant zu senken. Schließlich wurde die Eigenschaft des Kobalts untersucht, in den Siliziumkristall einzudringen und die Rekombinationslebensdauer der Minoritätsladungsträger zu senken. Durch die Verwendung eines reineren Sputtertargets und die Modifikation der Schichtgeometrien während der Silizidherstellung wurde versucht, eine Verbesserung der Lebensdauerwerte zu erzielen.

Abstract der Posterpräsentation: PVD-Beschichtungsverfahren (Physical Vapour Deposition) haben sich aufgrund der vielfältigen Möglichkeiten, unterschiedliche Oberflächeneigenschaften von dünnen Schichten mit fast jedem Volumenmaterial (Substrat) kombinieren zu können, etabliert. Durch die definierte Einstellung der Prozessparameter (z. B. Energiezufuhr, Druck, Gaszusammensetzung) können Schichten gemäß den spezifischen Anforderungen des Einsatzzweckes angepasst und optimiert werden. Selbst widersprechende Eigenschaften wie extreme Härte und Flexibilität lassen sich miteinander kombinieren. Zielsetzung des im Rahmen des BMBF-Programms „KMU-innovativ: Nanotechnologie“ (Nanochance) geförderten Forschungsvorhabens ist die Entwicklung einer neuartigen Kombination aus plasmagestützter Bogenentladung und gepulster HPPMS-Sputterabscheidung (High Power Pulsed Magnetron Sputtering) für die Herstellung von schadenstoleranten Schichten auf Umformwerkzeugen. Durch diese Kombination soll zum einen die Qualität bestehender nanokristalliner Schichtsysteme signifikant verbessert sowie eine Vielzahl neuer Schichtsysteme mit bislang nicht erreichten Eigenschaften synthetisiert werden. Ein derzeit untersuchtes Schichtsystem besteht aus einer konventionellen Hartstoffschicht mit sehr hoher Formbeständigkeit und einer weniger als fünf Mikrometer dünnen Deckschicht aus einer Cr2AlC-MAX-Phase, die chemisch und thermisch beständig ist und einen sehr geringen Reibverschleiß hat. Die Beschichtung erfolgt in einer umgerüsteten industriellen PVD-Beschichtungsanlage im Technikum der KCS Europe GmbH. Durch in-situ Plasmaanalysen sowie mikrostrukturelle und mechanische Charakterisierungen der unterschiedlich hergestellten Schichtsysteme durch die TU Dresden wird die Korrelation zwischen technischen Beschichtungsparametern, Plasmaparametern sowie Schichtstruktur und Schichteigenschaften erarbeitet. Damit wird ein tiefgreifendes Verständnis der Abscheidemechanismen von nanokristallinen Schichtsystemen und eine Beschleunigung des Entwicklungsprozesses möglich.

For sustainable development, it is highly important to limit the loss of energy and materials in machines used for transportation, manufacturing, and other purposes. Large improvements can be achieved by reducing friction and wear in machine elements, for example by the application of coatings. This work is focused on triboactive coatings, for which the outermost layer changes in tribological contacts to form so-called tribofilms. The coatings are deposited by magnetron sputtering (a physical vapor deposition method) and thoroughly chemically and structurally characterized, often theoretically modelled, and tribologically evaluated, to study the connection between the composition, structure and tribological performance of the coatings. Tungsten disulfide, WS2, is a layered material with the possibility of ultra-low friction. This work presents a number of nanocomposite or amorphous coatings based on WS2, which combine the low friction with improved mechanical properties. Addition of N can give amorphous coatings consisting of a network of W, S and N with N2 molecules in nanometer-sized pockets, or lead to the formation of a metastable cubic tungsten nitride. Co-deposition with C can also give amorphous coatings, or nanocomposites with WSx grains in an amorphous C-based matrix. Further increase in coating hardness is achieved by adding both C and Ti, forming titanium carbide. All the WS2-based materials can provide very low friction (down to µ<0.02) by the formation of WS2 tribofilms, but the performance is dependent on the atmosphere as O2 and H2O can be detrimental to the tribofilm functionality. Another possibility is to form low-friction tribofilms by tribochemical reactions between the two surfaces in contact. Addition of S to TiC/a-C nanocomposite coatings leads to the formation of a metastable S-doped carbide phase, TiCxSy, from which S can be released. This enables the formation of low-friction WS2 tribofilms when a Ti-C-S coating is run against a W counter-surface. Reduced friction, at a moderate level, also occurs for steel counter-surfaces, likely due to formation of beneficial iron sulfide tribofilms. The studied coatings, whether based on WS2 or TiC, are thus triboactive, with the ability to form low-friction tribofilms in a sliding contact.

Chemnitz, Techn. Univ., Diss., 2003. / Auch im Shaker-Verl. ersch. u.d.Titel: Herstellung, Charakterisierung und Bewertung von leitfähigen Diffusionsbarrieren auf Basis von Ta, Ti und W für die Kupfermetallisierung von Siliciumschaltkreisen, 2004 (3-8322-2532-3).

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No. of bitstreams: 1 GARCIA_Uanderson_2017.pdf: 25453924 bytes, checksum: 4c34f46362e91f9eb2f88106f805d7f3 (MD5) Previous issue date: 2017-03-14 / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) / Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) / This work covers the investigation and synthesis of nanometric structures of Porous Anodic Alumina PAA, produced from low purity substrates, in aim to obtain selfsustained membranes. The Hard Anodization (HA) and Mild Anodization (MA) processes were used under special conditions through those found in literature. The analyses of results were based in comparing the AAP produced under the same conditions except the applied potential that was different depending on the MA or HA. HA process had its time halved in order to investigate the oxide growth rate and to calibrate the conditions of anodized membrane synthesis over the glass samples. This work also covers the construction of a resistive thermal evaporation PVD system capable of evaporating metals with melting points below 800°C. Through the deposition of successive layers it was possible to obtain metallic films of aluminum with thicknesses above 10 µm, enabling conditions of synthesis of porous anodic alumina on substrates produced by thermal resistive evaporation. The result of membrane synthesis on low purity aluminum substrates was complement to the synthesis of membranes obtained in aluminum evaporated in glass substrates, since the thickness of each deposited film is low if compared to the thickness of the AAP layer. Therefore, it was necessary to make several Al depositions on the same samples, to obtain an aluminum film that was able to support an oxide layer of anodic alumina and with the same characteristics of those obtained by the process of MA. All anodized samples were characterized by scanning electron microscopy, including samples made from metalized aluminum. The micrography obtained from the low purity aluminum membranes were treated by ImageJ software allowing the morphological analysis. AAP membranes obtained from technical Al substrate depicted the formation of branched pore channels, a result of instabilities in applied electric field during Anodization and presence of different alloying elements in the Al substrate. The metalized aluminum film had a larger thickness in the samples positioned in the middle of the sample holder possibly due to different temperature gradients of filament depending on the position of Al pellets. / Este trabalho aborda a síntese e investigação de estruturas nanométricas de Alumina Anódica Porosa AAP produzidas a partir de substratos de baixa pureza, com a finalidade da obtenção de membranas auto-suportadas. Foram utilizados os processos de Hard Anodization (HA) e Mild Anodization (MA). Para efeito comparativo entre os processos foram mantidas todas as condições variando apenas o potencial aplicado. Posteriormente para HA o tempo experimental foi reduzido pela metade a fim de investigar a velocidade no crescimento do óxido e condições de anodização de membranas sobre as amostras de vidro. Este trabalho também abrange a construção de um sistema Phisical Vapor Deposition (PVD) por evaporação térmica resistiva, capaz de evaporar metais com pontos de fusão abaixo de 800°C. Através da deposição de sucessivas camadas foi possível a obtenção de filmes metálicos de Alumínio com espessuras acima de 10 µm, possibilitando condições de síntese de alumina anódica porosa sobre substratos produzidos por evaporação térmica resistiva. O resultado da síntese de membranas em substratos de Al de baixa pureza foi complementar à síntese das membranas obtidas em alumínio evaporado em substratos de vidro, pois a espessura de cada filme depositado é baixa se comparados a espessura da camada de AAP. Portanto, houve a necessidade de várias deposições sobre as mesmas amostras, para se obter o filme de alumínio que fosse capaz de suportar uma camada de alumina anódica porosa resistente e que se aproximasse das características das obtidas pelo processo de MA. Todas as amostras anodizadas foram caracterizadas por microscopia eletrônica de varredura, inclusive as amostras produzidas a partir do alumínio metalizado. As micrografias obtidas a partir das membranas de alumínio de baixa pureza foram tratadas pelo software ImageJ, possibilitando a análise morfológica das mesmas. As membranas de AAP de baixa pureza possuem poros com ramificações transversais, são provocadas pelos desvios do campo elétrico aplicado, além da possibilidade de formação de outros tipos de óxidos. O filme de alumínio metalizado teve maior espessura nas amostras posicionadas na parte central do porta amostra, isso pode estar relacionado com o aquecimento do filamento que ocorre da região central para as extremidades. / 2010/10813-0

Dans les Réacteurs à Eau Pressurisée (REP), en conditions hypothétiques accidentelles d'Accident de Perte de Réfrigérant Primaire, les gaines de combustible en alliage de zirconium subissent une oxydation importante à haute température. Pour ralentir ce phénomène, le CEA développe et étudie des gaines innovantes revêtues de chrome. Cependant, l'intégrité du revêtement doit être maintenue en service et notamment sous irradiation aux neutrons. L'objectif principal de la thèse est d'étudier le comportement sous irradiation de ce concept de gainage. On s'intéresse en particulier à la microstructure de l'interface Zr/Cr avant et après irradiation puisque cette dernière régit l'adhérence du dépôt au substrat. Des irradiations aux ions ont été effectuées afin de simuler le dommage causé par les neutrons dans un REP. Une approche multi-échelle est utilisée pour caractériser les échantillons avant et après irradiation. En particulier, la Microscopie Electronique en Transmission (MET) a permis de caractériser finement la microstructure de l'interface Zr/Cr. Un premier type d'interface Zr/Cr est observé et montre la présence de phases nanométriques de types Zr(Fe,Cr)2 C14 et ZrCr2 C15. Après irradiation, la phase C14 serait stabilisée, au détriment de la phase C15, par ségrégation du fer à l'interface. Pour une seconde interface, obtenue dans des conditions de dépôt différentes, seule la phase C15 est observée. Sous irradiation in-situ au MET, une dissolution de cette phase est constatée. Dans tous les cas, la conservation des continuités de plans cristallographiques à travers l'interface avant et après irradiation permet de conclure à une bonne adhérence du revêtement au substrat. / In Light Water Reactors (LWR) under hypothetical accidental conditions such as LOss of Coolant Accident (LOCA), zirconium alloy fuel claddings undergo significant oxidation at high temperatures. To limit this phenomenon, innovative chromium coated nuclear fuel claddings are studied at CEA. However, the integrity under neutron irradiation of such coating for in-service conditions must be preserved..The main objective of this PhD work is to study the behavior under ion irradiation of this new cladding concept. We especially focus on Zr/Cr interface microstructure evolution under irradiation, since the latter controls the adhesion of the coating to the substrate. Ion irradiations were performed to simulate the damage caused by neutrons in LWR. A multi-scale approach is used to characterize the samples before and after irradiation. In particular, Transmission Electron Microscopy (TEM) was used to characterize, at an atomic scale, the microstructure of the Zr/Cr interface. A first type of Zr/Cr interface is observed and shows the presence of nanometric phases of Zr(Fe,Cr)2 C14 and ZrCr2 C15 types. After irradiation, the C14 phase seems to be stabilized over the C15 phase, by segregation of iron at the interface. For a second interface, obtained using different deposition conditions, only C15 phase is observed. Under in-situ TEM irradiation, dissolution of the C15 phase is observed. Whatever the Zr/Cr interface type, preservation of the continuity of crystallographic planes before and after irradiation throughout the interface is demonstrated and thus induces a good adhesion of the coating to the substrate.

This diploma thesis aims to optimalization the process of magnetron sputtering and creating of thin layers for use in advanced oxidation processes. During the work was created range of TiOx layers. For this process was used physical method of sputtering called PVD. The photocatalytic activity of the deposited films was tested by degradation of organic dyes Acid Orange 7. Furthermore, the layer was analyzed on surface morphology (SEM) and the layer thickness (profilometry). Study of created layers was focused on the link between the characteristics of each layer, deposition parameters and photocatalysis properties. Based on these results, the layers were applied in a system using AOP for the decomposition of organic substances. The first chapter is devoted to a summary of existing knowledge of photocatalysis and its principles. Another chapter is devoted to the theory and methods of applying thin layers and summary of knowledge of the low-pressure discharges. In the exprimental section there are described various components of the apparatus. Furthermore, the experimental part of the work focuses on the analysis of the optimization process of applying thin layers on titanium oxide. The last chapter of the thesis contains the results of the experiments on the basis of is designed another research progress of this issue.

The aim of this diploma thesis is deposition of TiO2 thin films onto different types and sizes of substrates, and some of these layers dope by iron or silver. During the work was range of TiO2 layers created using a method of physical vapor deposition namely magnetron sputtering. For these processes was chosen the Dreva ARC 400 Hard Material Coating Plant device. The main aim of these depositions was to attempt to create TiO2 thin films on a substrates of larger surface than its in average laboratory processes usual. For this purpose were TiO2 layers deposited onto square glass plates of side length 10 cm. For comparsion and analysis were also as a substrates used microscope slides and fragments of silicon wafers. These substrates were used for testing of photocatalytic activity and on surface morphology (SEM). The theoretical part of this thesis aims to a methods of deposition TiO2 layers and their characteristics. In the experimental part is the used coating equipment and parameters of each deposition process described. Further the characteristics and results of individual experiments are described.

Made available in DSpace on 2014-06-11T19:32:51Z (GMT). No. of bitstreams: 0 Previous issue date: 2009-06-26Bitstream added on 2014-06-13T19:43:38Z : No. of bitstreams: 1 zanfolim_aa_dr_bauru.pdf: 2078904 bytes, checksum: 89fecc6406c0fe251fffb9f3101d20dd (MD5) / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) / Neste trabalho foram preparados filmes finos de ftalocianinas de zinco (ZnPc) e de níquel (NiPc) através da técnica de evaporação térmica à vácuo (PVD - physical vapor deposition) em diversas espessuras e em escala nanométrica com o objetivo de determinar a arquitetura molecular destes filmes bem como suas propriedades ópticas e elétricas. Em última análise buscam-se gerar subsídios para as possíveis aplicações, especialmente dispositivos eletrônicos a base de semicondutores orgânicos e sensores de gás. A ZnPc e a NiPc em pó foram caracterizadas utilizando-se as técnicas de termogravimetria (TG), calorimetria exploratória diferencial (DSC) e os filmes PVD por espectroscopias de absorção no ultravioleta-visível (UV-vis), no infravermelho com transformada de Fourier (FTIR), espalhamento Raman, difração de raios-X, microscopias óptica e de força atômica (AFM) e caracterização elétrica cc (tensão x corrente). Os resultados mostraram que é possível a fabricação de filmes PVD de ZnPc e NiPc, uma vez que estas moléculas não são termicamente degradadas durante o processo de evaporação térmica a vácuo, e que o crescimento dos filmes pode ser controlado em escala nanométrica para ambos os materiais. Em termos estruturais, os filmes PVD de ZnPc e NiPc são cristalinos (forma α) e possuem as moléculas arranjado-se na forma de agregados e monômetros e ordenadas com o anel macrociclo inclinado em relação à superfície do substrato. Tais agregados podem ser vistos em escala nanométrica, porém, em escala micrométrica os filmes apresentam-se morfologicamente homogêneos. Em relação às propriedades ópticas e elétricas, observou-se que ambos os filmes PVD absorvem na região do visível com a ZnPc apresentando fotoluminescência quando irradiado com laser 785 nm. A condutividade elétrica é de 1,2x'10 POT. -10' S/m para a ZnPc e de 72x'10 POT... / In this work thin films of phthalocyanines of zinc (ZnPc) and nickel (NiPc) were fabricated through the vacuum thermal evaporation technique (PVD - physical vapor deposition) for different thicknesses at nanometric scale with the objective of determining the molecular architecture of these films as well as their optical and electrical properties. The final idea is to generate subsidies for applications of these films in electronic devices based on organic semiconductors and gas sensors. The PVD films were characterized using thermogravimetry (TG), differential scanning calorimetry (DSC), ultraviolet-visible (UV-vis) and Fourier transform infrared (FTIR) absorption spectroscopies, Raman scattering, X-ray diffraction, optical and atomic force (AFM) microscopies, and electrical characterization (tension x current dc). The results showed that the fabrication of ZnPc and NiPc films is possible since these molecules are not thermally degraded during the process of vacuum thermal evaporation and that the growth of the films can be controlled at nanometric scale for both materials. Structurally, the PVD films of ZnPc and NiPc possess the molecules organized with the macrocycle ring tilted in relation to the substrate surface. They are crystalline (α form) and possess molecular aggregates in the form of dimmers or higher order of aggregates and monomers. Such aggregates can be seen at nanometric scale, however, at micrometric scale the films are morphologically homogeneous. In relation to the optical and electrical properties, it was observed that boh PVD films absorb in the visible region with the ZnPc presenting photoluminescence when irradiated with the 785 nm laser line. The electric conductivity at 1,2x'10 POT. -10' S/m for ZnPc and 72x'10 POT. -10' S/m for NiPc. They also presented photoconductivity with the ZnPc more photoconductor than NiPc. Finally, after thermal treatment... (Complete abstract click electronic access below)