The concept of percolated perpendicular media (PPM) for magnetic data storage is expected to surpass the areal storage density of 1 Tbit in -², which is regarded as the fundamental limit of conventional granular CoCrPt:oxide based recording media. PPM consist of a continuous ferromagnetic thin film with densely distributed defects acting as pinning sites for magnetic domain walls. In this study, practical realizations of PPM were fabricated by the deposition of [Co/Pt]8 multilayers with perpendicular magnetic anisotropy onto nanoperforated templates with various perforation diameters and periods. The structural defects given by the templates serve as pinning sites for the magnetic domain walls within the [Co/Pt]8 multilayers. Magnetometry at both the integral and the local level was employed to investigate the influence of the template on the magnetization reversal and the domain wall pinning. It was found, that magnetic domains can be pinned at the ultimate limit, between three adjacent pinning sites. The coercivity and the depinning field, which both are a measure for the strength of the magnetic domain wall pinning, were found to increase with increasing perforation diameter. The size of magnetic domains within the magnetic film appeared not to depend solely on the diameter of the nanoperforations or on the period of the template, but on the ration between diameter and period. By means of micromagnetic simulations it was found, that the presence of ferromagnetic material within the pinning site given supports the pinning of magnetic domain walls, compared to a pinning site that is solely given by a hole in the magnetic thin film. Investigation of the evolution of the magnetization in magnetic fields smaller than the coercive field revealed, that the energy barrier against thermally induced magnetization reversal is sufficiently large to provide long-term (> 10 years) stability of an arbitrary magnetization state. This could also be qualitatively supported by micromagnetic simulations. Static read/write tests with conventional hard disk recording heads revealed the possibility of imprinting bit patterns into the PPM under study. The minimum bit pitch that could be read back thereby depended on the period of the nanoperforated template.

Magnetic thin films and patterned nanostructures have been studied with respect to their magnetic properties using SQUID-magnetometry, magnetic force microscopy, electrical measurements, and micromagnetic calculations. Properties of vortex domain walls, trapped in Permalloy nanowires with artificial constrictions, were investigated experimentally and by numerical calculations. In particular, the geometrical extent and strength of the pinning potential were evaluated. In these wires, long-range vortex domain wall displacement induced by spin polarized alternating currents was obtained numerically at reduced threshold current densities as compared with the direct current case. Due to the asymmetry of the energy potential, the long-range displacement direction is determined by the vortex chirality. Strained FeCo/Pt superlattices with strong perpendicular anisotropy were investigated experimentally. The strain was controlled by varying the thickness of each alternating layer with monolayer precision and was found to have a dominating effect on the total anisotropy. Epitaxial films of the diluted magnetic semiconductor (Ga,Mn)As were studied with focus on how the ferromagnetic transition temperature could be controlled by post-growth annealing. The ferromagnetic transition temperature was enhanced by approximately 85% for a Mn-doping concentration of 6% under certain conditions. A method to manipulate micrometer sized magnetic particles on patterned arrays of elliptical Permalloy microstructures was studied. Controlled motion and separation of the magnetic particles were obtained using applied rotating magnetic fields. The domain structure of the elliptical elements was studied numerically.

Defects in the functional oxides play an important role in electronic devices like metal oxide semiconductor field effect transistors (MOSFETs) and resistive random-access memories (ReRAMs). The continuous scaling of CMOS has brought the Si MOSFET to its physical technology limit and the replacement of Si channel with Ge channel is required. However, the performance of Ge MOSFETs suffers from Ge/oxide interface quality and reliability problems, which originates from the charge traps and defect states in the oxide or at the Ge/oxide interface. The sub-oxide layers composed of GeII states at the Ge/GeO2 interface seems unavoidable with normal passivation methods like hydrogen treatment, which has poor electrical properties and is related to the reliability problem. On the other hand, ReRAM works by formation and rupture of O vacancy conducting filaments, while how this process happens in atomic scale remains unclear. In this thesis, density functional theory is applied to investigate the defect behaviours in oxides to address existing issues in these electronic devices. In chapter 3, the amorphous atomic structure of doped GeO2 and Ge/GeO2 interface networks are investigated to explain the improved MOSFET reliability observed in experiments. The reliability improvement has been attributed to the passivation of valence alternation pair (VAP) type O deficiency defects by doped rare earth metals. In chapter 4, the oxidation mechanism of GeO2 is investigated by transition state simulation of the intrinsic defect diffusion in the network. It is proposed that GeO2 is oxidized from the Ge substrate through lattice O interstitial diffusion, which is different from SiO2 which is oxidized by O2 molecule diffusion. This new mechanism fully explains the strange isotope tracer experimental results in the literature. In chapter 5, the Fermi level pinning effect is explored for metal semiconductor electrical contacts in Ge MOSFETs. It is found that germanides show much weaker Fermi level pinning than normal metal on top of Ge, which is well explained by the interfacial dangling bond states. These results are important to tune Schottky barrier heights (SBHs) for n-type contacts on Ge for use on Ge high mobility substrates in future CMOS devices. In chapter 6, we investigate the surface and subsurface O vacancy defects in three kinds of stable TiO2 surfaces. The low formation energy under O poor conditions and the +2 charge state being the most stable O vacancy are beneficial to the formation and rupture of conducting filament in ReRAM, which makes TiO2 a good candidate for ReRAM materials. In chapter 7, we investigate hydrogen behaviour in amorphous ZnO. It is found that hydrogen exists as hydrogen pairs trapped at oxygen vacancies and forms Zn-H bonds. This is different from that in c-ZnO, where H acts as shallow donors. The O vacancy/2H complex defect has got defect states in the lower gap region, which is proposed to be the origin of the negative bias light induced stress instability.

L’alimentation en énergie des réseaux de capteurs miniaturisés pose une question fondamentale, dans la mesure où leur autonomie est un critère de qualité de plus en plus important pour l’utilisateur. C’est même une question cruciale lorsque ces réseaux visent à assurer une surveillance d’infrastructure (avionique, machines, bâtiments…) ou une surveillance médicale ou environnementale. Les matériaux piézoélectriques permettent d’exploiter l’énergie mécanique inutilisée présente en abondance dans l’environnement (vibrations, déformations liées à des mouvements ou à des flux d’air…). Ils peuvent ainsi contribuer à rendre ces capteurs autonomes en énergie. Sous la forme de nanofils (NF), les matériaux piézoélectriques offrent une sensibilité qui permet d’exploiter des sollicitations mécaniques très faibles. Ils sont également intégrables, éventuellement sur substrat souple.Dans cette thèse nous nous intéressons au potentiel des nanofils de matériaux semi-conducteurs piézoélectriques, tels que ZnO ou les composés III-V, pour la conversion d’énergie mécanique en énergie électrique. Depuis peu, ceux-ci ont fait l’objet d’études relativement nombreuses, avec la réalisation de nanogénérateurs (NG) prometteurs. De nombreuses questions subsistent toutefois avec, par exemple, des contradictions notables entre prédictions théoriques et observations expérimentales.Notre objectif est d’approfondir la compréhension des mécanismes physiques qui définissent la réponse piézoélectrique des NF semi-conducteurs et des NG associés. Le travail expérimental s’appuie sur la fabrication de générateurs de type VING (Vertical Integrated Nano Generators) et sur leur caractérisation. Pour cela, un système de caractérisation électromécanique a été construit pour évaluer les performances des NG réalisés et les effets thermiques sous une force compressive contrôlée. Le module d’Young et les coefficients piézoélectriques effectifs de NF de GaN; GaAs et ZnO et de NF à structure cœur/coquille à base de ZnO ont été évalués également dans un microscope à force atomique (AFM). Les nanofils de ZnO sont obtenus par croissance chimique en milieu liquide sur des substrats rigides (Si) ou flexibles (inox) puis sont intégrés pour former un générateur. La conception du dispositif VING s’est appuyée sur des simulations négligeant l’influence des porteurs libres, comme dans la plupart des études publiées. Nous avons ensuite approfondi le travail théorique en simulant le couplage complet entre les effets mécaniques, piézoélectriques et semi-conducteurs, et en tenant compte cette fois des porteurs libres. La prise en compte du piégeage du niveau de Fermi en surface nous permet de réconcilier observations théoriques et expérimentales. Nous proposons notamment une explication au fait que des effets de taille apparaissent expérimentalement pour des diamètres au moins 10 fois plus grands que les valeurs prévues par simulation ab-initio ou au fait que la réponse du VING est dissymétrique selon que le substrat sur lequel il est intégré est en flexion convexe ou concave. / Energy autonomy in small sensors networks is one of the key quality parameter for end-users. It’s even critical when addressing applications in structures health monitoring (avionics, machines, building…), or in medical or environmental monitoring applications. Piezoelectric materials make it possible to exploit the otherwise wasted mechanical energy which is abundant in our environment (e. g. from vibrations, deformations related to movements or air fluxes). Thus, they can contribute to the energy autonomy of those small sensors. In the form of nanowires (NWs), piezoelectric materials offer a high sensibility allowing very small mechanical deformations to be exploited. They are also easy to integrate, even on flexible substrates.In this PhD thesis, we studied the potential of semiconducting piezoelectric NWs, of ZnO or III-V compounds, for the conversion from mechanical to electrical energy. An increasing number of publications have recently bloomed about these nanostructures and promising nanogenerators (NGs) have been reported. However, many questions are still open with, for instance, contradictions that remain between theoretical predictions and experimental observations.Our objective is to better understand the physical mechanisms which rule the piezoelectric response of semiconducting NWs and of the associated NGs. The experimental work was based on the fabrication of VING (Vertical Integrated Nano Generators) devices and their characterization. An electromechanical characterization set-up was built to evaluate the performance and thermal effects of the fabricated NGs under controlled compressive forces. Atomic Force Microscopy (AFM) was also used to evaluate the Young modulus and the effective piezoelectric coefficients of GaN, GaAs and ZnO NWs, as well as of ZnO-based core/shell NWs. Among them, ZnO NWs were grown using chemical bath deposition over rigid (Si) or flexible (stainless steel) substrates and further integrated to build VING piezoelectric generators. The VING design was based on simulations which neglected the effect of free carriers, as done in most publications to date. This theoretical work was further improved by considering the complete coupling between mechanical, piezoelectric and semiconducting effects, including free carriers. By taking into account the surface Fermi level pinning, we were able to reconcile theoretical and experimental observations. In particular, we propose an explanation to the fact that size effects are experimentally observed for NWs with diameters 10 times higher than expected from ab-initio simulations, or the fact that VING response is non-symmetrical according to whether the substrate on which it is integrated is actuated with a convex or concave bending.

Poussée par une forte demande et un marché très compétitif, la technologie PPD CIS est en évolution permanente. Du fait de leurs très bonnes performances en terme de bruit, les capteurs d’image CMOS à base de Photodiode Pincée (PPD CIS) peuvent désormais atteindre une sensibilité de l’ordre de quelques photons, ce qui rend cette technologie particulièrement intéressante pour les applications d’imagerie à haute résolution temporelle. Aujourd’hui, la physique des photodiodes pincées n’est pas encore comprise dans sont intégralité et il y a un manque important d’uniformisation des méthodes de caractérisation de ces détecteurs. Ces travaux s’intéressent à la définition, à la modélisation analytique, à la simulation et à l’estimation de paramètres clés des PPD CIS, tels que le temps de transfert, la tension de pincement et la full well capacity (FWC). Comme il a été mis en évidence par cette thèse, il est de première importance de comprendre l’effet des conditions expérimentales sur les performances de ces capteurs. Ceci aussi bien pour l’optimisation de ces paramètres lors de la conception du capteur, que lors de la phase de caractérisions de celui-ci, et enfin pour choisir correctement les conditions de mesures lors de la mise en œuvre du dispositif. / Driven by an aggressive market competition, CMOS Image Sensor technology is in continuous evolution. Thanks to the outstanding noise performances of Pinned Photodiode (PPD) CIS, CMOS sensors can now reach a few photons sensitivity, which makes this technology a particularly interesting candidate for high temporal resolution applications. Despite the incredibly large production volume, today, the PPD physics is not yet fully understood, and there is still a lack of golden standards for the characterization of PPD performances. This thesis focuses on the definition, analytical modeling, simulation and estimation of PPD key design parameters, with a particular focus on charge mechanisms, on the pinning voltage and on the full well capacity. The models developed in this work can help both manufacturers and users understanding the design trade-offs and the dependence of these parameters from the experimental conditions, in order to optimize the sensor design, to correctly characterize the image sensor, and to adjust the operation conditions to reach optimum performances.

Magnetic nanorings are the object of increasing scientific interest because they possess the vortex (stray field free) state which ensures lower magnetostatic interactions between adjacent ring elements in high packing density memory devices. In addition, they have other potential applications such as single magnetic nanoparticle sensors, microwave-frequency oscillators and data processing. The stabilization of magnetization state, types of domains and domain wall structures depends on the competing energies such as magnetostatic, exchange and anisotropy. The nucleation/ pinning of domain walls depends on the local inhomogeneity in shape such as roughness, notches etc, which play an important role in stabilizing domain configurations that can be controlled by magnetic field/spin polarized current etc. The information gained by the study of magnetization reversal in the nanoring devices could help in understanding the possible stable magnetization states, which can be incorporated into the development of magnetic logic and recording devices in a NR-based architecture. The magnetization reversal and the stable states in the symmetric cobalt nanorings (NRs) attached with nanowires (NWs) (at diametrically opposite points), is studied through magnetoresistance (MR) measurements by application of in-plane magnetic field (H). Here, a strong in-plane shape anisotropy is introduced in cobalt thin films by patterning them into NR and NWs. The presence or absence of a DW in the device is detected utilizing the AMR property of the material, where the presence of DW leads to a decrease in the resistance of the probed section of the device. It is demonstrated that the magnetization reversal of the device with smaller width, proceeds through four distinct magnetization states, one of these is the stabilized vortex state that persists over a field range of 0.730 kOe. The effect of width (from 70 nm to 1 µm) and diameter (from 2 µm to 6 µm) on the switching behavior is demonstrated. The magnetization states observed in the MR measurements are well supported by micromagnetic simulations. A statistical analysis of switching fields in these devices was demonstrated by histogram plot (of switching counts) to understand the repeatability and reproducibility of switching characteristics. In addition, the magnetization reversal of permalloy NR is also studied by MR experiment when two NWs are attached to it in two different configurations. It has been demonstrated that a vortex state can be stabilized if the NWs are attached in a way that they are at an obtuse angle with respect to each other (type-II device) which is not the case if the NWs are attached at diametrically opposite points (type-I device). This occurs because the NWs reverse at different fields as they are asymmetric with respect to applied magnetic field at every angle. The angular dependence study of the magnetization states indicates that the vortex state could be always stabilized in the type-II device irrespective of the direction of in-plane applied magnetic field while it is not the case in type-I device. The experimental observations are in good agreement with micromagnetic simulations performed on similar device structures. Further, in the last part of the thesis, the magnetization reversal of geometrically engineered cobalt NR (of width 80 nm) devices are studied by application of H. Two types of cobalt nanoring devices were fabricated. In type-1 devices the NR is attached with two nanowires (NWs) at diametrically opposite positions. In type-2 devices the NR is attached with one NW, whose other end is attached to a 5 µm x 5 µm square pad. In type-2 device, the pad reverses first, thus causing the generation of a DW at the junction of the nucleation pad and the NW. The device type-2 possesses five distinct magnetization states, one of these is the vortex state. Easy nucleation of domain walls (DWs) results in a decrease of switching field corresponding to the reversal of the nanowire. This leads to an increase in the range of fields, where the vortex state exists. In addition, angular dependence of the switching behavior indicates that the vortex state can be stabilized at all in-plane orientations of H. This occurs because of the fact that symmetry was broken due to the presence of single domain wall pinning center which was the junction of the NR and NW. The results of our micromagnetic simulations are in a good agreement with the experimental results. These results are important to understand the role of NWs which allows the formation of vortex state at every angle of the in-plane H. In type-1 device, the simulation shows that when the field is applied at any angle away from the axis of the NW, the vortex state cannot be stabilized. The width dependent study of switching fields indicates, that the switching fields decrease with increasing the width of NR devices due to a reduction of the demagnetization field.

Submitted by Renata Lopes (renatasil82@gmail.com) on 2018-08-22T15:35:41Z No. of bitstreams: 1 evertonluizmartinsdapaixao.pdf: 15592539 bytes, checksum: 3e2c3d43b62b9fa0edea517213c63a12 (MD5) / Approved for entry into archive by Adriana Oliveira (adriana.oliveira@ufjf.edu.br) on 2018-09-03T16:33:20Z (GMT) No. of bitstreams: 1 evertonluizmartinsdapaixao.pdf: 15592539 bytes, checksum: 3e2c3d43b62b9fa0edea517213c63a12 (MD5) / Made available in DSpace on 2018-09-03T16:33:20Z (GMT). No. of bitstreams: 1 evertonluizmartinsdapaixao.pdf: 15592539 bytes, checksum: 3e2c3d43b62b9fa0edea517213c63a12 (MD5) Previous issue date: 2018-02-26 / CAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior / Entender e controlar o movimento de parede de domínio em nanofios é extremamente im-portante para o desenvolvimento de novas tecnologias para a aplicação em dispositivos de ar-mazenamento de dados. É conhecido que defeitos como entalhes ("notches") em nanofios são úteis para fixar paredes de domínio. No entanto, a intensidade de potencial de aprisionamento gerado com esse tipo de defeito é muito forte, e para desprender a parede de domínio é ne-cessário aplicar uma densidade de corrente muito elevada. Entretanto, pode-se criar armadilhas para paredes de domínios variando localmente propriedades magnéticas do nanofio, tais como: tais como constante de troca, magnetização de saturação, constante de anisotropia, parâmetro de amortecimento de Gilbert. Definimos essas regiões como impurezas magnéticas por ter propriedades magnéticas diferentes do nanofio. Neste trabalho, realizamos simulações micro-magnéticas para investigar a dinâmica de uma parede de domínio transversal (PDT) aprisionada em um defeito magnético usando pulsos de corrente elétrica polarizada em spin. Afim de criar armadilhas de aprisionamento para a PDT, consideramos um modelo de impureza magnética variando localmente a constante de troca. Ao ajustar o potencial de interação entre impure-zas magnéticas e uma PDT, verificamos que pulsos de corrente de baixa intensidade e de curta duração são capazes de desprender a PDT. Por fim, demonstramos que é possível controlar a posição de uma PDT aplicando pulsos de corrente sequenciais em uma nanofita contendo uma distribuição linear de impurezas magnéticas igualmente espaçadas. / Understand and control the domain wall movement in nanowires is extremely important for the development of new technologies for an application in data storage devices. It is known that defect as notches in nanowires are useful to pinning domain walls. Nevertheless, the pinning potential intensity generated by this type of defect is strong, and for depinning the domain wall it is necessary to apply a high current density. However, it is possible to create traps for domains walls by locally varying magnetic properties of the nanowire, such as: the exchange constant, saturation magnetization, anisotropy constant, Gilbert damping parameters. We define those regions as magnetic impurities once their magnetic properties differ from the nanowire proper-ties. In this study, we realized micromagnetic simulations in order to investigate the dynamics of a transverse domain wall (TDW) trapped in a magnetic defect using electric current pulses of spin-polarized. In order to create traps to TDW pinning, we have modeled the magnetic impurities by varying the exchange constant locally. When we adjusted the interaction poten-tial between the magnetic impurities and the nanowire we showed that low intensity and short duration current pulses are capable of depinning the TDW. At last, we demonstrated that it is possible to control the TDW position applying sequential current pulses in a nanowire planar containing a linear distribution of magnetic impurities equally distributed.

The electrical properties of ZnO and contacts to ZnO have been investigated using different techniques. Temperature dependent Hall (TDH) effect measurements have been used to characterize the as-received melt grown ZnO samples in the 20 – 330 K temperature range. The effect of argon annealing on hydrogen peroxide treated ZnO samples has been investigated in the 200 – 800oC temperature range by the TDH effect measurement technique. The experimental data has been analysed by fitting a theoretical model written in Matlab to the data. Donor concentrations and acceptor concentrations together with the associated energy levels have been extracted by fitting the models to the experimentally obtained carrier concentration data by assuming a multi-donor and single charged acceptor in solving the charge balance equation. TDH measurements have revealed the dominance of surface conduction in melt grown ZnO in the 20 – 40 K temperature range. Surface conduction effects have proved to increase with the increase in annealing temperature. Surface donor volume concentrations have been determined in the 200 – 800oC by use of theory developed by D. C. Look. Good rectifying Schottky contacts have been fabricated on ZnO after treating the samples with boiling hydrogen peroxide. Electrical properties of these Schottky contacts have been investigated using current-voltage (IV) and capacitance-voltage (CV) measurements in the 60 – 300 K temperature range. The Schottky contacts have revealed the dominance of predominantly thermionic emission at room temperature and the existence of other current transport mechanisms at temperatures below room temperature. Polarity effects on the Schottky contacts deposited on the O-polar and Zn-polar faces of ZnO have been demonstrated by the IV technique on the Pd and Au Schottky contacts at room temperature. Results obtained indicate a strong dependence of the Schottky contact quality on the polarity of the samples at room temperature. The quality of the Schottky contacts have also indicated their dependence on the type of metal used with the Pd producing contacts with the better quality as compared to the Au. Schottky barrier heights determined using temperature dependent IV measurements have been observed to increase with increasing temperature and this has been explained as an effect of barrier inhomogeneities, while the ones obtained from CV measurements have proved to follow the negative temperature coefficient of the II – VI semiconductor material, i.e. a decrease in barrier height with increasing temperature. However, the values have proved to be larger than the energy gap of ZnO, an effect that has been explained as caused by an inversion layer. Copyright / Dissertation (MSc)--University of Pretoria, 2010. / Physics / unrestricted

The effect of individual and combined zirconium and manganese additions have been compared for an AA2198 6 mm thick sheet in T351 temper regarding their influence primarily on recrystallisation resistance and secondly on fracture toughness and overageing resistance. A complete characterisation of the dispersoid distributions was carried out for a deeper understanding of the effects of the Al3Zr and Al20Cu2Mn3 particles, involving studying their formation from the as-cast and homogenised stage.The most important finding in this work was the lower recrystallisation resistance in the alloy containing 0.1 wt%Zr + 0.3 wt%Mn compared to that containing only 0.1 wt%Zr. This result was rather unexpected, if one considers the opposite microsegregation patterns of Zr and Mn during casting, which leads to dispersoids occupying the majority of the grains’ volume and minimising dispersoid-free zones that could be potential sites for nucleation of recrystallisation. The other two alloys with dispersoid additions 0.05 wt%Zr + 0.3 wt%Mn and 0.4 wt%Mn, were partially and fully recrystallised respectively in the rolled T351 condition.Equally important in this work, was the observation that the opposite microsegregation trend of Zr and Mn sufficed to restrict grain growth in unrecrystallised areas. The 0.1Zr-0.3Mn alloy exhibited the lowest grain size of all alloys, both in the T351 temper and after annealing at 535oC for up to 144 hours. The reason for this was the combined action of Al20Cu2Mn3 dispersoids and Mn solute in the regions where the Zr concentration was low (i.e. near the grain boundaries), which offered additional pinning pressure to those areas compared to the 0.1Zr alloy.The lower recrystallisation resistance of the 0.1Zr-0.3Mn alloy was explained on the grounds of two main factors. The first was the lower subgrain size and hence stored energy within bands of Al20Cu2Mn3 dispersoids, which increased the driving force for recrystallisation in these regions. The second was the interaction between Zr and Mn that led to a decrease in the Al3Zr number density and pinning pressure. Since Zr was the dominant dispersoid family in terms of inhibiting recrystallisation, inevitably this alloy became more prone to recrystallisation. The Al3Zr pinning pressure was found to be much lower especially within bands of Al20Cu2Mn3 dispersoids. The detrimental effect of the Mn addition on the Al3Zr distribution was proven not to result from the dissolution of Zr within Mn-containing phases, and several other phases, at the grain interior and also in grain boundaries. The observed effect could not be precisely explained at this stage.Concerning mechanical properties, the 0.1Zr alloy exhibited the best combination of properties in the Kahn tear tests for fracture toughness. Further, it had a higher overageing resistance compared to the 0.1Zr-0.3Mn alloy.As an overall conclusion from this work, considering all the studied properties here that are essential for damage tolerant applications, the addition of 0.1 wt%Zr to the AA2198 6 mm thick sheet was found to be superior to that of the combined addition of 0.1 wt%Zr + 0.3 wt%Mn.

The concept of percolated perpendicular media (PPM) for magnetic data storage is expected to surpass the areal storage density of 1 Tbit in -², which is regarded as the fundamental limit of conventional granular CoCrPt:oxide based recording media. PPM consist of a continuous ferromagnetic thin film with densely distributed defects acting as pinning sites for magnetic domain walls. In this study, practical realizations of PPM were fabricated by the deposition of [Co/Pt]8 multilayers with perpendicular magnetic anisotropy onto nanoperforated templates with various perforation diameters and periods. The structural defects given by the templates serve as pinning sites for the magnetic domain walls within the [Co/Pt]8 multilayers. Magnetometry at both the integral and the local level was employed to investigate the influence of the template on the magnetization reversal and the domain wall pinning. It was found, that magnetic domains can be pinned at the ultimate limit, between three adjacent pinning sites. The coercivity and the depinning field, which both are a measure for the strength of the magnetic domain wall pinning, were found to increase with increasing perforation diameter. The size of magnetic domains within the magnetic film appeared not to depend solely on the diameter of the nanoperforations or on the period of the template, but on the ration between diameter and period. By means of micromagnetic simulations it was found, that the presence of ferromagnetic material within the pinning site given supports the pinning of magnetic domain walls, compared to a pinning site that is solely given by a hole in the magnetic thin film. Investigation of the evolution of the magnetization in magnetic fields smaller than the coercive field revealed, that the energy barrier against thermally induced magnetization reversal is sufficiently large to provide long-term (> 10 years) stability of an arbitrary magnetization state. This could also be qualitatively supported by micromagnetic simulations. Static read/write tests with conventional hard disk recording heads revealed the possibility of imprinting bit patterns into the PPM under study. The minimum bit pitch that could be read back thereby depended on the period of the nanoperforated template.