Suspensões coloidais de microesferas de poliestireno carregadas proporcionam um sistema experimental excelente para estudar muitos problemas em física da matéria condensada. Sob condições apropriadas as partículas nessas suspensões podem se auto-organizar em um cristal com ordem de longo alcance, o chamado cristal coloidal. Neste trabalho apresentamos resultados de simulações por Dinâmica Molecular relacionados a defeitos pontuais, vacâncias e interstícios, em um cristal coloidal 2D. Calculamos a energia de formação e a interação destes defeitos pontuais, mostrando que um interstício é mais provável de ser criado do que uma vacância e que a interação entre os defeitos (vacância-vacância e interstício-interstício) é atrativa. Em conjunto esses resultados apontaram que os defeitos pontuais podem afetar o mecanismo de fusão do cristal coloidal 2D. Com relação à dinâmica dos defeitos, o foco foi sobre as vacâncias. Calculamos as entalpias de migração deste defeito de uma forma original, baseada na troca de topologias. Concluímos que a vacância não difunde de acordo com um único mecanismo, mas sim um misto de dois comportamentos, são eles: relação de Arrhenius corrigida e relação de potência com a temperatura. Calculamos também as entalpias e entropias relativas de formação das topologias da vacância, o que possibilitou identificar as topologias mais estáveis. Acreditamos que esses resultados serão importantes para trabalhos experimentais envolvendo interfaces e superfícies sólidas. / Colloidal suspensions of charged polystyrene microspheres provide an excellent experimental system to study many problems in condensed matter physics. Under appropriate conditions the particles in these suspensions organize themselves in a long-range-ordered crystal, the so-called colloidal crystal. In this thesis we report Molecular Dynamics simulations on point defects, vacancies and interstitials, in a 2D colloidal crystal. We have calculated the formation energy and interaction of these point defects, as well as the energy barriers between the various topological configurations that the defects may adopt while in thermal equilibrium. It is shown that the interstitials are more likely to be formed than the vacancies, and the interaction between defects (vacancy-vacancy and interstitial-interstitial) is attractive. Taken together, these results indicate that point defects may affect the melting process of a 2D colloidal crystal. With regard to the dynamics of the defects, emphasis was placed on the vacancies. The enthalpy for migration of a vacancy was calculated on the basis of exchanges between topologies. We concluded that the vacancy does not diffuse according to a single mechanism, but rather through a mixture of two processes: one is a modified Arrhenius mechanism and the other is represented by a power-law dependence on the temperature. We also calculated the relative enthalpies and entropies associated with the formation of the different topologies of vacancies, which allowed identification of the most stable topologies. We believe these results may have important bearing on experimental works involving interfaces and solid surfaces.

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The high temperature BCC phase (b) of titanium undergoes a martensitic transformation to HCP phase (a) upon cooling, but can be stabilized at room temperature by alloying with BCC transition metals such as Mo. There exists a metastable composition range within which the alloyed b phase separates into a + b upon equilibrium cooling but not when rapidly quenched. Compositional partitioning of the stabilizing element in as-quenched b microstructure creates nanoscale precipitates of a new simple hexagonal w phase, which considerably reduces ductility. These phase transformation reactions have been extensively studied experimentally, yet several significant questions remain: (i) The mechanism by which the alloying element stabilizes the b phase, thwarts its transformation to w, and how these processes vary as a function of the concentration of the stabilizing element is unclear. (ii) What is the atomistic mechanism responsible for the non-Arrhenius, anomalous diffusion widely observed in experiments, and how does it extend to low temperatures? How does the concentration of the stabilizing elements alter this behavior? There are many other w forming alloys that such exhibit anomalous diffusion behavior. (iii) A lack of clarity remains on whether w can transform to a -phase in the crystal bulk or if it occurs only at high-energy regions such as grain boundaries. Furthermore, what is the nature of the a phase embryo? (iv) Although previous computational results discovered a new wa transformation mechanism in pure Ti with activation energy lower than the classical Silcock pathway, it is at odds with the a / b / w orientation relationship seen in experiments. First principles calculations based on density functional theory provide an accurate approach to study such nanoscale behavior with full atomistic resolution, allowing investigation of the complex structural and chemical effects inherent in the alloyed state. In the present work, a model Ti-Mo system is investigated to resolve these fundamental questions. Particular attention is paid to how Mo- (i) influences the bonding in Ti, (ii) distorts the local structure in the Ti lattice, (iii) impacts the point and interfacial defect formation and migration energies, and (iv) affects the mechanism and energetics of b w and wa transformations. Our results are correlated with appropriate experimental results of our collaborators and those in open literature. The modification of Ti bonding by Mo solutes and the attendant distortion of the lattice hold the key to answering the diverse questions listed above. The solutes enhance electron charge density in the <111> directions and, consequently, stiffen the lattice against the displacements necessary for b w transformation. However, Ti atoms uncoordinated by Mo remain relatively mobile, and locally displace towards w lattice positions. This effect was further studied in a metastable Ti-8.3 at.% Mo system with an alternate cell geometry which allows for either b w or $\betaa transformation, and it was found that after minimization Ti atoms possessed either a or w coordination environments. The creation of this microstructure is attributed to both the disruption of uniform b w transformation by the Mo atoms and the overlap of Ti-Mo bond contractions facilitating atomic displacements to the relatively stable a or w structures in Mo-free regions. The vacancy migration behavior in such a microstructure was then explored. Additionally, several minimized configurations were created with planar interfaces between Mo-stabilized b region and its adjacent a- or w- phases, and it was found that the positioning of Mo at the interface strongly dictates the structure of the adjacent Mo depleted region.

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This review presents recent research advances in measuring native point defects in ZnO nanostructures, establishing how these defects affect nanoscale electronic properties, and developing new techniques to manipulate these defects to control nano- and micro- wire electronic properties. From spatially-resolved cathodoluminescence spectroscopy, we now know that electrically-active native point defects are present inside, as well as at the surfaces of, ZnO and other semiconductor nanostructures. These defects within nanowires and at their metal interfaces can dominate electrical contact properties, yet they are sensitive to manipulation by chemical interactions, energy beams, as well as applied electrical fields. Non-uniform defect distributions are common among semiconductors, and their effects are magnified in semiconductor nanostructures so that their electronic effects are significant. The ability to measure native point defects directly on a nanoscale and manipulate their spatial distributions by multiple techniques presents exciting possibilities for future ZnO nanoscale electronics.

O método cerâmico é a rota de síntese mais utilizada na produção de materiais luminescentes no estado sólido dopados com íons terras raras. Porém, as altas temperaturas necessárias para a formação dos compostos somada ao longo tempo de síntese levantam questões sobre a viabilidade energética desse método. Nos dias atuais, há grande interesse em buscar alternativas mais sustentáveis que gastem menos energia, e produtos com performances cada vez melhores. Nesse cenário, foi proposta a síntese dos materiais com luminescência persistente em forno de micro-ondas doméstico, por se tratar de um equipamento relativamente barato, que gasta muito menos energia que um forno tubular convencional, e tem um tempo de síntese muito menor. Os materiais SrS:Eu2+,TR3+ (TR = Ce, Nd, Sm, Dy, Er e Yb) foram produzidos pelo método de síntese no estado sólido assistida por micro-ondas, e para validação e comparação do método, os materiais SrS:TR (TR = Eu2+, Ce3+, Sm3+ e Yb2+/3+) foram preparados por ambos os métodos cerâmico e assistido por micro-ondas. Estudos de estrutura e morfologia dos materiais preparados foram realizados com medidas de DRX em pó e XANES na borda-LIII dos íons terras raras e na borda-K do enxofre. As propriedades luminescentes dos materiais foram investigadas com medidas de termoluminescência, luminância, espectroscopia UVVisível, espectroscopia UV-Vácuo e XEOL. Todos os materiais dopados com Eu2+ têm uma banda larga de emissão centrada em 620 nm atribuída à transição 4f65d1&#8594;4f7 com forte efeito nefelauxético. Além do Eu2+, foram observadas transições 5d&#8594;4f para o Ce3+ e o Yb2+. Estudos de luminescência persistente mostraram que a co-dopagem do SrS:Eu2+ com íons TR3+ aumentaram a duração do tempo de emissão de luz dos materiais após cessada a fonte de irradiação em mais de 400 %. Além disso, não se observou diferença na duração do fenômeno para os diferentes íons co-dopantes, mostrando que o mecanismo de luminescência persistes nesse material é governado pelo armadilhamento de elétrons em defeitos pontuais na matriz. Um novo fenômeno foi observado com a intensa luminescência persistente gerada após irradiação com raios X. Por fim, foram realizados testes de aplicação dos materiais com luminescência persistente em iluminação no estado sólido para geração de luz branca, mostrando que eles podem ser utilizados em LEDs persistentes. / Hitherto, the ceramic method is the most employed synthesis route on the production of solid-state luminescent materials doped with rare-earth ions. However, the high temperatures required for the compounds formation added up to the long synthesis time give rise to questions about the energetic viability of this method. Nowadays there is a great interest in finding more sustainable alternatives which demands less energy and provides products with better performances. Is this scenario, the synthesis of the persistent luminescence materials in a domestic microwave oven was proposed, because it is a relatively cheap equipment that spends much less energy than a conventional tubular furnace and has a shorter synthesis time. Thus, the materials SrS:Eu2+,TR3+ (TR = Ce, Nd, Sm, Dy, Er e Yb) were prepared via the microwaveassisted solid-state synthesis, and, for validation and comparison between methods, the materials SrS:TR (TR = Eu2+, Ce3+, Sm3+ and Yb2+/3+) were prepared via both the ceramic and microwave-assisted methods. Studies of structure and morphology of the prepared materials were undertaken with XRD and XANES at LIII-edge of rare-earth ions and K-edge of sulfur measurements. The luminescent properties of the materials were explored with thermoluminescence, luminance, UV-Vis spectroscopy, VUV spectroscopy and XEOL measurements. All the Eu2+-doped materials have a large emission band centered at 620 nm assigned to the 4f65d1&#8594;4f7 transition with strong nephelauxetic effect. Besides Eu2+, 5d&#8594;4f transitions were observed for Ce3+ and Yb2+ as well. Persistent luminescence studies showed that co-doping SrS:Eu2+ with TR3+ have improved the light emission timespan in over 400 % after removing the irradiation source. Moreover, no difference was detected on the emission timespan for the different co-dopant ions, showing that the persistent luminescence mechanism for this material is governed by electron trapping on the matrix point defects. A new phenomenon with high-intensity persistent luminescence was observed in these materials after irradiation with X-ray. At last, tests of application of the persistent luminescent materials with solid-state white-lighting were made, showing that they can be used in persistent LEDs.

La durabilité chimique des alliages métalliques résulte notamment de la nature des défauts ponctuels assurant le transport au travers du film d’oxydation formé en surface. L'élaboration de couches d'oxyde modèles par oxydation thermique en pression contrôlée et ALD (Atomic Layer Deposition) et l'étude de leurs propriétés semi conductrices (conditionnées par la nature des défauts ponctuels) devrait permettre une meilleure compréhension des mécanismes de formation de ces couches d'oxyde. / The chemical durability of the metal alloy results in particular from the nature of point defects providing transport through the oxidation film formed on the surface. Models oxide layers, grown by thermal oxidation and Alomic Layer Deposition, will be studied by photoelectrochemistry. This will provide us information about the semiconductive properties of the oxide, determined by the point defect in the oxide layer, and should allow us a better understanding of the formation mechanism of these oxide.

Le dioxyde d'uranium (UO2) est le combustible nucléaire le plus largement utilisé dans les réacteurs nucléaires à travers le monde. En conditions d’exploitation, UO2 est soumis au flux de neutrons et subit des réactions en chaîne de fission nucléaire, ce qui crée un grand nombre de produits de fission et des défauts ponctuels. L'étude du comportement des produits de fission et des défauts ponctuels est importante pour comprendre les propriétés du combustible sous irradiation. Nous effectuons des calculs de structure électronique basés sur la théorie de la fonctionnelle de la densité (DFT) pour modéliser les dégâts d’irradiation à l'échelle atomique. La méthode DFT+U est utilisé pour décrire les fortes corrélations des électron 4f du cérium et des électrons 5f de l’uranium dans les matériaux étudiés (UO2, CeO2 et (U, Ce)O2). (U, Ce)O2 est étudié car il est considéré comme un matériau modèle peu radioactif d'oxydes d’actinides mixtes comme (U, Pu)O2 qui est le combustible d'oxydes mixtes (MOX) utilisé dans les réacteurs à eau légère et les réacteurs à neutrons rapides. Le dioxyde de cérium (CeO2) est étudié pour des données de référence de (U, Ce)O2. Nous effectuons une étude DFT+U des défauts ponctuels et des produits de fission gazeux (Xe et Kr) dans CeO2 et comparons nos résultats à ceux déjà existants pour l’UO2. Nous étudions les propriétés en volume, ainsi que le comportement des défauts pour (U, Ce)O2, et comparons nos résultats à ceux de (U, Pu)O2. En outre, pour l'étude des défauts dans UO2, des améliorations méthodologiques sont explorées considérant l'effet de couplage spin-orbite et l’effet de taille finie de la supercellule de modélisation. / Uranium dioxide (UO2) is the most widely used nuclear fuel in existing nuclear reactors around the world. While in service for energy supply, UO2 is submitted to the neutron flux and undergoes nuclear fission chain reactions, which create large number of fission products and point defects. The study of the behavior of the fission products and point defects is important to understand the fuel properties under irradiation. We conduct electronic structure calculations based on the density functional theory (DFT) to model this radiation damage at the atomic scale. The DFT+U method is used to describe the strong correlation of the 4f electrons of cerium and 5f electrons of uranium in the materials studied (UO2, CeO2 and (U, Ce)O2). (U, Ce)O2 is studied because it is considered as a low radioactive model material of mixed actinide oxides such as the MOX fuel (U, Pu)O2 used in light water reactors and fast neutron reactors. Cerium dioxide (CeO2) is studied to provide reference data of (U, Ce)O2. We perform a DFT+U study of point defects and gaseous fission products (Xe and Kr) in CeO2 and compare our results to the existing ones of UO2We study the bulk properties as well as the behavior of defects for (U, Ce)O2, and compare our results to the ones of (U, Pu)O2. Furthermore, for the study of defects in UO2, methodological improvements are explored considering the spin-orbit coupling effect and the finite-size effect of the simulation supercell.

Theoretical studies of point defect interactions and structural stability of compounds have been performed using density functional theory. The defect-related properties, such as activation energy of diffusion, electronic and magnetic structure of selected materials have been studied. The major part of the present work is devoted to a very important material for semiconductor industry, GaAs. The formation energies of intrinsic point defects and the solution energies of 3d transitions in GaAs have been calculated from first principles. Based on the calculated energies, we analysed the site preference of defects in the crystal. The tendency of defects to form clusters has been investigated for the intrinsic defects as well as for impurities in GaAs. The magnetic moment of 3d impurities has been calculated as a function of the chemical environment. The possibility of increasing the Curie temperature in (Ga,Mn)As by co-doping it with Cr impurities has been examined on the basis of calculated total energy difference between the disordered local moment and the ferromagnetically ordered spin configurations. We found that, in order to reach the highest critical temperature, GaAs should be separately doped with either Cr or Mn impurities. Also, we have shown that diffusion barrier of interstitial Mn depends on the charge state of this impurity in (Ga, Mn)As. The formation of defect complexes between interstitial and substitutional Mn atoms, and their influence on the value of diffusion barrier for interstitial Mn, has been studied. The pair interactions energies between interstitial oxygen atoms in hcp Zr, Hf and Ti have been calculated using first principles. Based on the calculated energies, the oxygen ordering structures in IVB transition metal solid solutions have been explained. A prediction of nitrogen ordering in Hf-N solid solution has been made. The thermodynamic description of intermetallic compounds in the Zr-Sn binary system has been obtained. The conclusion has been made that Zr substitution on the Sn sites takes place in the Zr4Sn phase, which accounts for the unusual stoichiometry of this Cr3Si structure type compound. The influence of pressure on the phase stability in the Fe-Si system has been investigated. We have found instability of the hcp Fe0.9Si0.1 random alloy with respect to the decomposition onto the Si-poor hcp Fe alloy and the B2 FeSi under high pressure. The tendency of this decomposition becomes stronger with increasing the applied pressure. / QC 20100624

Point defects are an inherent part of crystalline materials and they influence important physical and chemical properties, such as diffusion, hardness, catalytic activity and phase stability. Increased understanding of point defects enables us to tailor the defect-related properties to the application at hand. Modeling and simulation have a prominent role in acquiring this knowledge. In this thesis thermodynamic and kinetic properties of point defects in metals and ceramics are studied using first-principles calculations based on density functional theory. Phenomenological models are used to translate the atomic level properties, obtained from the first-principles calculations, into functional materials properties. The next paragraph presents the particular problems under study. The formation and migration of vacancies and simple vacancy clusters in copper are investigated by calculating the energies associated with these processes. The structure, stability and electronic properties of the low-oxygen oxides of titanium, TiOx with 1/3 &lt; x &lt; 3/2, are studied and the importance of structural vacancies is demonstrated. We develop an integrated first-principles and Calphad approach to calculate phase diagrams in the titanium-carbon-nitrogen system, with particular focus on vacancy-induced ordering of the substoichiometric carbonitride phase, TiCxNy (x+y &lt; 1). The possibility of forming higher oxides of plutonium than plutonium dioxide is explored by calculating the enthalpies for nonstoichiometric defect-containing compounds and the analysis shows that such oxidation is only produced by strong oxidants. For ceria (CeO2) doped with trivalent ions from the lanthanide series we probe the connection between the choice of a dopant and the improvement of ionic conductivity by studying the oxygen-vacancy formation and migration properties. The significance of minimizing the dopant-vacancy interactions is highlighted. We investigate the redox thermodynamics of CeO2-MO2 solid solutions with M being Ti, Zr, Hf, Th, Si, Ge, Sn or Pb and show that reduction is facilitated by small solutes. The results in this thesis are relevant for the performance of solid electrolytes, which are an integral part of solid oxide fuel cells, oxygen storage materials in automotive three-way catalysts, nuclear waste materials and cutting tool materials. / QC 20100622