A sociedade humana teve seu desenvolvimento atrelado à exploração de recursos naturais do planeta e atualmente dependemos significativamente de bens de consumo derivados destes recursos, principalmente dos recursos provenientes do petróleo. A diversificação da matriz energética é lenta e nossa dependência dos combustíveis fósseis permanecerá durante várias décadas. Em função deste cenário econômico, são crescentes e fundamentais as pesquisas de acumulações não convencionais de óleo e gás, o que motivou o presente projeto. A área de estudo escolhida se constitui de um afloramento de arenito asfáltico (arenito impregnado, nos poros, por betume) relativo à rocha-reservatório do sistema petrolífero Irati Pirambóia, e se localiza na borda leste da Bacia do Paraná, nas proximidades do município de Anhembi SP. O objetivo do projeto foi identificar e mapear a camada de arenito com presença do óleo (pesado, de baixo grau API), em meio a camadas com pouco ou nenhum óleo, verificando uma assinatura geofísica associável à mesma que pudesse ser utilizada em pesquisas em outras áreas com o mesmo tipo de acumulação. Os métodos utilizados, Eletrorresistividade, Polarização Induzida e Eletromagnético Indutivo, foram escolhidos por serem amplamente aplicados de forma integrada em estudos ambientais, em áreas contaminadas por derivados de hidrocarbonetos. Os dados, adquiridos com a técnica de caminhamento elétrico e arranjo eletródico dipolo-dipolo, geraram perfis 2D de resistividade e cargabilidade que permitiram visualizar a camada alvo, e linhas de CE paralelas foram interpretadas com uma técnica 3D para inferir a geometria e os limites da mesma. Foram realizadas algumas sondagens elétricas verticais e caminhamentos eletromagnéticos, para corroborar os resultados principais e para comparação com dados de um poço perfurado no local pela Petrobras, com resultados bastante satisfatórios, o que sugere um potencial de aplicação dos métodos geoelétricos em outras áreas de interesse. / Human society had its development linked to the exploitation of the Earths natural resources and nowadays we depend significantly on consumer goods derived from these resources, especially the ones from oil. The diversification of the energy matrix is slow and our dependence on fossil fuels should last for several decades. Due to this economic scenario, oil and gas unconventional accumulation exploration are growing and are fundamental, which motivated this project. The area of study consists of an asphaltic sandstone outcrop (sandstone impregnated in the pores by bitumen) concerning the Irati Pirambóia oil systems reservoir rock, and is located on the eastern edge of the Paraná Basin, near the city of Anhembi - SP. The goal for this project was to identify and map the sandstone layer with the presence of oil (heavy, with low API grade), in between layers low on oil or with no oil at all, by checking a matching geophysical signature that could be used in other research areas with the same type of accumulation. The geophysical methods, Electrical Resistivity, Induced Polarization and Inductive Electromagnetic, were chosen because of their wide integrated application on environmental studies, in areas contaminated by hydrocarbon derivatives. The data obtained through the electrical profiling and dipole-dipole electrode array technique generated 2D resistivity and chargeability profiles that allowed us to visualize the target layer, and EP parallel lines were interpreted through a 3D technique to infer its geometry and limits. Some vertical electrical surveys and electromagnetic profiling were performed to corroborate with the main results and for comparison with data from a well drilled on the site by Petrobras, with very satisfactory results, suggesting a potential of geoelectrical methods applications in other areas of interest.

Landslide characterization and hazard assessments require multidisciplinary approaches that connect geologic processes with geotechnical parameters. Field monitoring of hydrologic variables such as water content and water potential, coupled with geoelectrical measurements that can establish relationships used for geotechnical and landslide hazard investigations is deficient. This study brings together different techniques to develop a methodology that connects geoelectrical measurements and shear strength. A field-based framework was established that includes (1) analysis of long-term soil moisture fluctuations within different landslides (2) establishment of constitutive and new equations that test the use of electrical conductivity to predict soil-water relationships and shear strength (3) using electrical resistivity tomography (ERT) to support and facilitate the prediction of shear strength in a slope. Hydrologic conditions including volumetric water content, water potential, and electrical conductivity in the soil were measured at three active landslides in Kentucky. The in-situ electrical conductivity used within the framework is valid as a predictor of suction stress and shear strength. The ERT supports interpretations of landslide failure zones, landslide type, lithologic boundaries, and changes in moisture conditions, but also is able to utilize the methodology to calculate shear strength, and provide a spatial view of shear strength in the slope. The practical application of this framework is to support landslide hazard assessment and further understand the long-term influence of moisture conditions in hillslope soils. These parameters are pertinent to investigating the stability of landslides that are often triggered or reactivated by rainfall.

Empirical models based on flow resistivity are commonly used to determine the bulk properties of porous sound absorbing materials. The bulk properties include the complex wavenumber and complex characteristic impedance which can be used directly in simulation models. Moreover, the bulk properties can also be utilized to determine the normal incidence sound absorption and specific acoustic impedance for sound absorbing materials of any thickness and for design of layered materials. The sound absorption coefficient of sound absorbing materials is measured in an impedance tube using wave decomposition and the measured data is used to determine the flow resistivity of the materials by least squares curve fitting to empirical equations. Results for several commonly used foams and fibers are tabulated to form a rudimentary materials database. The same approach is then used to determine the flow resistivity of compressed sound absorbing materials. The flow resistivities of the compressed materials are determined as a function of the compression ratio. Results are then used in conjunction with transfer matrix theory to predict the sound absorptive performance of layered compressed absorbers with good agreement to measurement.

Orientador: César Augusto Moreira / Resumo: O potencial geológico do Brasil para mineralizações auríferas é mundialmente reconhecido, quer seja pelo seu passado histórico, como por conta do expressivo número de ocorrências, depósitos, minas e as centenas de áreas ativas e inativas distribuídas por todo o país. Na região em que presente estudo foi realizado, já foram detalhados uma série de jazimentos desta natureza, caracterizadas por associações de filões de quartzo e pequenas proporções de óxidos de ferro, pirita e calcopirita. Este trabalho apresenta, portanto, os resultados de um estudo de prospecção geofísica de detalhe realizado a partir da aplicação conjunta dos métodos da Eletrorresistividade e da Polarização Induzida, integrados a análise estrutural. O local estudado consiste numa área potencialmente mineralizada em ouro no Complexo Bossoroca, localizada na zona rural do município de São Sepé (RS). Para obtenção dos dados geofísicos foram realizadas cinco linhas de 400m de comprimento e 10m de espaçamento entre eletrodos, através da técnica de tomografia elétrica em arranjo Schlumberger. O levantamento estrutural, por sua vez, considerou medidas de lineamentos, extraídas a partir de imagem SRTM da área, assim como dados de acamamentos e de fraturas de litotipos pertencente ao Complexo Bossoroca, obtidos a partir de levantamento estrutural sistemático. Os resultados de resistividade não permitiram a definição de zonas mineralizadas, possivelmente devido ao pequeno contraste existente entre a rocha encaixante e ... (Resumo completo, clicar acesso eletrônico abaixo) / Abstract: Brazil’s geological potential for auriferous mineralization is recognized worldwide for its historic past, as well as for the number of occurrences, deposits, mines and hundreds of active and inactive areas distributed throughout the country. In the region where the present study was carried out, series of such deposits have already been described, characterized by associations of quartz lodes and small proportions of iron oxides, pyrite and chalcopyrite. This work presents the results of a geophysical prospecting study obtained through the joint application of the DC resistivity and induced polarization methods, integrated to the structural analysis. The studied areas consists of a potentially gold mineralized area in the Bossoroca Complex located in the county of São Sepé (RS). In order to obtain the geophysical data, five lines with 400m in length and 10m of spacing between electrodes were made through the electrical tomography technique in a Schlumberger arrangement. The structural data collecting considered measures of lineaments, extracted from the SRTM image of the area, as well as data of bedding and fractures of lithotypes belonging to the Bossoroca Complex, obtained from a systematic structural data collecting. The results of resistivity did not allow the definition of mineralized zones, possibly due to the small contrast between the rock and the mineralized zone. The chargeability data indicated three zones with high values of load (≥ 4,4 mV / V) located to the eas... (Complete abstract click electronic access below) / Mestre

The feasibility of predicting porewater salinity based on calibrated surface electromagnetic methods is discussed in a coastal wetland on the southern banks of Tampa Bay in West-Central Florida. This study utilizes a new method to float commercial land based electromagnetic (EM) instruments in shallow marine waters of less than 1.5 meters. The floating EM-31 (Geonics, Ltd.) effectively sensed the magnitude and lateral extent of high and low salinity porewaters within mangrove lined ditches and ponds. Resistivity and EM geophysical methods are merged with direct sampling data to calibrate layers in electromagnetic models to infer shallow (<30m) groundwater salinity patterns. Initial marine resistivity surveys are necessary to discriminate between equivalent EM model solutions for seafloor conductivities beneath shallow (0.1-1.5m) marine (~30 ppt) waters. Using formation factors computed from nearby resistivity surveys, porewater conductivity predictions based on surface EM-31 and EM-34 measurements are successful at distinguishing overall porewater salinity trends. At the Tampa Bay study site, the most distinctive terrain conductivity anomalies are associated with mangroves bordering marine waters. Highly elevated porewater conductivities are found within 5m of the mangrove trunks, falling sharply off within 10m, presumably due to saltwater exclusion by mangrove roots. Modeling indicates the shallow water EM-31 measurements probably lack the resolution necessary to image more subtle porewater conductivity variations, such as those expected in association with diffuse submarine groundwater discharge. However, the technique has potential application for locating high contrast zones of freshwater discharge and other salinity anomalies in shallow and nearshore areas not accessible to conventional marine resistivity or land-based arrays, and hence may be useful for interdisciplinary studies of coastal wetland ecosystems.

This dissertation consists of three projects utilizing electric and electromagnetic (EM) methods to better understand critical-zone hydrogeologic conditions in select Florida wetlands and waters. First, a time-lapse electrical resistivity (ER) survey was conducted in section of mangrove forest on a barrier island in southeast Florida to image changes in pore-water salinity in the root zone. ER data show the most variability in the root zone over a 24-hour period, and, generally, the ground is more resistive during the day than overnight. Second, a suite of three-dimensional forward models, based on varying lateral boundaries and conductivities typical of a coastal wetland, were run to simulate the EM response of a commerical electromagnetic induction instrument crossing over said boundaries. Normalized profiles show the transition is sharper in a hypersaline regime than one where freshwater and clay are present. Furthermore, enough variability exists in hypersaline regimes to justify collecting profile measurements in multiple coil configurations to constrain the nature of a lateral boundary. Also, under certain circumstances, there are kinks in the EMI response even across abrupt boundaries due to concentrated current density at a layer's edge. Lastly, geophysical surveys were conducted at six wetlands in west-central Florida to characterize potential hydrostratigraphic units and compare/contrast them to the current conceptual model for cypress dome wetlands. ER was used to image the geometry of the top of limestone; ground penetrating radar (GPR) was used to image stratigraphy beneath and surrounding wetlands. These wetlands can be grouped into two models. Topographic highs surrounding wetlands are controlled by the undulating top of limestone at sites where the region is characterized by limestone ridges. In contrast, topographic highs are controlled by thick sand packages at sites regionally characterized by sand dunes over scoured limestone.

Challenges with integrating high-κ gate dielectric,retrograde Si1-xGexchannel and silicided contacts in future CMOStechnologies are investigated experimentally and theoreticallyin this thesis. ρMOSFETs with either Si or strained Si1-xGex surface-channel and different high-κgate dielectric are examined. Si1-xGex ρMOSFETs with an Al2O3/HfAlOx/Al2O3nano-laminate gate dielectric prepared by means ofAtomic Layer Deposition (ALD) exhibit a great-than-30% increasein current drive and peak transconductance compared toreference Si ρMOSFETs with the same gate dielectric. Apoor high-κ/Si interface leading to carrier mobilitydegradation has often been reported in the literature, but thisdoes not seem to be the case for our Si ρMOSFETs whoseeffective mobility coincides with the universal hole mobilitycurve for Si. For the Si1-xGexρMOSFETs, however, a high density ofinterface states giving riseto reduced carrier mobility isobserved. A method to extract the correct mobility in thepresence of high-density traps is presented. Coulomb scatteringfrom the charged traps or trapped charges at the interface isfound to play a dominant role in the observed mobilitydegradation in the Si1-xGexρMOSFETs. Studying contacts with metal silicides constitutes a majorpart of this thesis. With the conventional device fabrication,the Si1-xGexincorporated for channel applications inevitablyextends to the source-drain areas. Measurement and modelingshow that the presence of Ge in the source/drain areaspositively affects the contact resistivity in such a way thatit is decreased by an order of magnitude for the contact of TiWto p-type Si1-xGex/Si when the Ge content is increased from 0 to 30at. %. Modeling and extraction of contact resistivity are firstcarried out for the traditional TiSi2-Si contact but with an emphasis on the influenceof a Nb interlayer for the silicide formation. Atwo-dimensional numerical model is employed to account foreffects due to current crowding. For more advanced contacts toultra-shallow junctions, Ni-based metallization scheme is used.NiSi1-xGex is found to form on selectively grown p-typeSi1-xGexused as low-resistivity source/drain. Since theformed NiSi1-xGex with a specific resistivity of 20 mWcmreplaces a significant fraction of the shallow junction, athree-dimensional numerical model is employed in order to takethe complex interface geometry and morphology into account. Thelowest contact resistivity obtained for our NiSi1-xGex/p-type Si1-xGexcontacts is 5´10-8Ωcm2, which satisfies the requirement for the 45-nmtechnology node in 2010. When the Si1-xGexchannel is incorporated in a MOSFET, it usuallyforms a retrograde channel with an undoped surface region on amoderately doped substrate. Charge sheet models are used tostudy the effects of a Si retrograde channel on surfacepotential, drain current, intrinsic charges and intrinsiccapacitances. Closed-form solutions are found for an abruptretrograde channel and results implicative for circuitdesigners are obtained. The model can be extended to include aSi1-xGexretrograde channel. Although the analytical modeldeveloped in this thesis is one-dimensional for long-channeltransistors with the retrograde channel profile varying alongthe depth of the transistor, it should also be applicable forshort-channel transistors provided that the short channeleffects are perfectly controlled. Key Words:MOSFET, SiGe, high-k dielectric, metal gate,mobility, charge sheet model, retrograde channel structure,intrinsic charge, intrinsic capacitance, contactresistivity.

It is generally believed that one of the key parameterscontrolling the normal state and superconducting properties ofhigh temperature superconductors is the charge carrierconcentrationpin the CuO2planes.By changing the non-isovalent dopingconcentration on the RE site as well as the oxygen content in(RE)Ba2Cu3O7−δ, an excellent tool is obtained tovary the hole concentration over a wide range from theunderdoped up to the overdoped regime.In the present thesis thefocus is on the doping effects on the structural and normalstate electrical properties in Nd-123 doped with Ca, La, Pr,Ca-Pr, and Ca-Th.T he effects of doping have been investigatedby X-ray and neutron powder diffraction, and by measurements ofthe resistivity, thermoelectric powerS, and Hall coefficient RH.T he thermoelectric power is a powerful tool forstudies of high temperature superconductivity and is highlysensitive to details of the electronic band structure.Sas a function of temperature has been analyzed in twodifferent two band models.The parameters of these models arerelated to charactristic features of the electron bands and asemiempirical physical description of the doping dependence ofSis obtained.So me important results are following: (i)The valence of Pr in the RE-123 family.Results from thestructural investigations, the critical temperature Tc, and thethermoelectric power indicated a valence +4 at low dopingconcentration, which is in agreement with results of chargeneutral doping in the RE-123 family.(ii)Hole localization. The results of bond valence sum (BVS)calculations from neutron diffraction data showed that holelocalization on the Pr+4site was the main reason for the decrease of thehole concentration p.Differ ent types of localization wereinferred by S measurements for Ca-Th and Ca-Pr dopings.(iii)Competition between added charge and disorder. Theresults of RH measurements indicated that Ca doping introduceddisorder in the CuO2planes in addition to added charge.This could bethe main reason for the observed small decrease of thebandwidth of the density of states in the description of aphenomenological narrow band model.(iv) Empirical parabolic relation between γ and p.S data were analyzed and well described by a two-band modelwith an additional linear T term, γT.An empiricalparabolic relation for γ as a function of holeconcentration has been found. <b>Key words:</b>high temperature superconductors, criticaltemperature, resistivity, thermoelectric power, Hallcoefficient, X-ray diffraction, Neutron diffraction, NdBa2Cu3O7−δ, hole concentration,substitution.

The continuous and aggressive downscaling of conventional CMOS devices has been driving the vast growth of ICs over the last few decades. As the CMOS downscaling approaches the fundamental limits, novel device architectures such as metallic source/drain Schottky barrier MOSFET (SB-MOSFET) and SB-FinFET are probably needed to further push the ultimate downscaling. The ultimate goal of this thesis is to integrate metallic Ni1-xPtx silicide (x=0~1) source/drain into SB-MOSFET and SB-FinFET, with an emphasis on both material and processing issues related to the integration of Ni1-xPtx silicides towards competitive devices. First, the effects of both carbon (C) and nitrogen (N) on the formation and on the Schottky barrier height (SBH) of NiSi are studied. The presence of both C and N is found to improve the poor thermal stability of NiSi significantly. The present work also explores dopant segregation (DS) using B and As for the NiSi/Si contact system. The effects of C and N implantation into the Si substrate prior to the NiSi formation are examined, and it is found that the presence of C yields positive effects in helping reduce the effective SBH to 0.1-0.2 eV for both conduction polarities. In order to unveil the mechanism of SBH tuning by DS, the variation of specific contact resistivity between silicide and Si substrates by DS is monitored. The formation of a thin interfacial dipole layer at silicide/Si interface is confirmed to be the reason of SBH modification. Second, a systematic experimental study is performed for Ni1-xPtx silicide (x=0~1) films aiming at the integration into SB-MOSFET. A distinct behavior is found for the formation of Ni silicide films. Epitaxially aligned NiSi2-y films readily grow and exhibit extraordinary morphological stability up to 800 oC when the thickness of deposited Ni (tNi) &lt;4 nm. Polycrystalline NiSi films form and tend to agglomerate at lower temperatures for thinner films for tNi≥4 nm. Such a distinct annealing behavior is absent for the formation of Pt silicide films with all thicknesses of deposited Pt. The addition of Pt into Ni supports the above observations. Surface energy is discussed as the cause responsible for the distinct behavior in phase formation and morphological stability. Finally, three different Ni-SALICIDE schemes towards a controllable NiSi-based metallic source/drain process without severe lateral encroachment of NiSi are carried out. All of them are found to be effective in controlling the lateral encroachment. Combined with DS technology, both n- and p-types of NiSi source/drain SB-MOSFETs with excellent performance are fabricated successfully. By using the reproducible sidewall transfer lithography (STL) technology developed at KTH, PtSi source/drain SB-FinFET is also realized in this thesis. With As DS, the characteristics of PtSi source/drain SB-FinFET are transformed from p-type to n-type. This thesis work places Ni1-xPtx (x=0~1) silicides SB-MOSFETs as a competitive candidate for future CMOS technology. / QC20100708 / NEMO, NANOSIL, SINANO

A new shallow junction formation process, based on selective silicon etching followed by selective growth of in situ B-doped SiGe, is presented. The approach is advantageous compared to conventional ion implantation followed by thermal activation, because perfectly abrupt, low resistivity junctions of arbitrary depth can be obtained. In B-doped SiGe layers, the active doping concentration can exceed the solid solubility in silicon because of strain compensation. In addition, the compressive strain induced in the Si channel can improve drivability through increased hole mobility. The process is integrated by performing the selective etching and the selective SiGe growth in the same reactor. The main advantage of this is that the delicate gate oxide is preserved. The silicon etching process (based on HCl) is shown to be highly selective over SiO2 and anisotropic, exhibiting the densely packed (100), (311) and (111) surfaces. It was found that the process temperature should be confined between 800 ºC, where etch pits occur, and 1000 ºC, where the masking oxide is attacked. B-doped SiGe layers with a resistivity of 5×10-4 Ωcm were obtained. Well-behaved pMOS transistors are presented, yet with low layer quality. Therefore integration issues related to the epitaxial growth, such as selectivity, loading effect, pile-up and defect generation, were investigated. Surface damage originating from reactive-ion etching of the sidewall spacer and nitride residues from LOCOS formation were found to degrade the quality of the SiGe layer. Various remedies are discussed. Nevertheless, high-quality selective epitaxial growth could not be achieved with a doping concentration in the 1021 cm-3 range. The maximum doping level resulting in a high-quality layer, with the loading effect taken into account, was 6×1020 cm-3. After this careful process optimization, a high-quality layer was obtained in the recessed areas. Finally, Ni mono-germanosilicide was investigated as a material for contact formation to the epitaxial SiGe layers in the recessed source and drain areas. The formation temperature is 550 ºC and it is stable up to 700 ºC. The observation of a recessed step and lateral growth of the silicide led to a detailed treatment of the contact resistivity of the NiSi0.8Ge0.2/Si0.8Ge0.2 interface using 2-D as well as 3-D modeling. Different values were obtained for square shaped and rounded contacts, 5.0x10-8 Ωcm2 and 1.4x10-7 Ωcm2, respectively. / QC 20101028