La présente thèse traite du sujet de la formation de soi-même, coûteux pour l'éducation, en mettant l'accent sur la figure du spectateur du cinéma. Sa création prend pour intercesseurs des témoignages de spectateurs, dont les récits, organisés autour de la mémoire d’oeuvres frappantes, exposent une cathégorie particulière de films : les films d’une vie. Il s’agit de films qui, à l’insu de leur importance dans l’histoire du cinéma, ont eu une importance dans «l’histoire individuelle » de chaqu’un, films dont l’élection se fait à partir d’une intimité première avec le corps de celui qui le regarde, en fait l’expérience, et est prêt à raconter son expérience, ou, plus exactement, les souvenirs qu’en demeurent. Extraits de la collection de livres intitulée Les films de ma vie, dont l’organisation a été entreprise par Leon Cakoff à l’occasion du 32ème Festival Internacional de Cinéma de São Paulo, les récits, tissés avec les images qui sont «emportées avec soi », indiquent qu’il y a quelque chose d’une vie qui se passe dans l’acte de réminiscence des films lesquels, pour quelque raison, sont «portés » pour la vie. Quelque chose qui concerne le passage et l’invention du temps, les différentes postures du corps et de l’âme, les expériences du monde et de l’être. Par conséquent, les questions proposées par la thèse au sujet de ce qu’elle suppose être un mouvement ontologique, poussé par l’expérimentation cinématographique vers le soi-même, résultent d’une conversation avec les récits et de la rencontre avec les « choses » qu’ils donnent à voir. En outre, à côté des témoignages, compose aussi la thèse l’attitude esthétique de la chercheuse elle-même qui, dans la condition de spectatrice et aimante du cinéma, prend pour intercesseurs aussi les films de sa propre collection pour, en mouvant les choses d’un côté à l’autre, exercer l’écriture. La necessité de la relation avec la parole d’autrui pour la composition de sa propre écriture exprime, ainsi, une certaine inscription benjaminienne dans la téssiture théorique et méthodologique de la tâche. On n’entend pas reconstituer, à partir de vestiges de l’expérience, aucune totalité : on vise plutôt ruminer et problématiser le thème à partir du choix de textes qui, déplacés de son origine textuelle, s’engagent à composer poétiquement le texte autre de la thèse. Dans ce chemin de rencontres et passages se mobilise la question : comment, de «l’ouverture au monde » immanente au cinéma, peut devenir l’ouverture au monde du soimême, relative au plan ontologique, dans la sphère de la réception – dans la mesure où cette réception est si proche du sujet de la formation de soi-même, dans les pratiques éducatives? / Esta tese trata do tema da formação de si, caro à educação, com foco na figura do espectador do cinema. Parto dos depoimentos de alguns espectadores, cujas narrativas foram organizadas em torno de sua memória, em relação a um tipo particular de filmes: os filmes de uma vida. Trata-se de filmes que, a despeito de sua importância para a história do cinema, tiveram importância para a “história individual” de cada um, filmes cuja eleição sucede a partir de uma intimidade primeira com o corpo daquele que olha, experimenta, e se dispõe a narrar sua experiência, ou, mais propriamente, as lembranças do que dela resta. Tais narrativas foram selecionadas a partir da coleção de livros intitulada Os filmes da minha vida, cuja organização foi iniciada por Leon Cakoff, à ocasião da 32ª Mostra Internacional de Cinema de São Paulo. Os depoimentos, tecidos por entre imagens que alguém “leva consigo”, indicam que qualquer coisa de uma vida se passa no ato de reminiscência de filmes, os quais, por alguma razão, são “carregados” pela vida afora. A tese, portanto, trata do tema da passagem e da invenção do tempo, também de diferentes posturas do corpo e da alma, sobre as experiências do mundo e do ser. Assim, as questões propostas pela pesquisa, relativamente ao que suspeita tratar-se de um movimento ontológico, impulsionado pela experimentação cinematográfica em direção ao si mesmo, surgem de uma conversa com as narrativas e do encontro com as “coisas” que elas trazem à vista. Além disso, ao lado dos depoimentos, integra a tese a atitude estética da própria pesquisadora que, na condição de espectadora e amante do cinema, toma como intercessores também os filmes de seu próprio acervo para, movendo as coisas de um lado a outro, ensaiar a escrita. A necessidade da relação com a palavra de outrem para a composição da própria escritura exprime, assim, certa inscrição benjaminiana na contextura teórica e metodológica do trabalho. Não há intenção de reconstituir, a partir dos resquícios da experiência, qualquer totalidade: busca-se antes problematizar o tema a partir da escolha de excertos que, deslocados de sua origem textual, passam a compor poeticamente o texto outro da tese. Por esse caminho de encontros e passagens, mobiliza-se a pergunta que move a tese: como, da “abertura para o mundo” imanente no cinema, pode devir a própria “abertura do mundo”, referente ao plano ontológico, na esfera da recepção – na medida em que tal recepção se encontra tão próxima do tema da formação de si, nas práticas educacionais? / This thesis deals with the subject of the self formation, expensive to the education, with focus on the figure of the spectator of the cinema. Its creation dialogues with statements made by spectators, whose narratives, organized around the memory of meaningful oeuvres, cover a specific category of films: the films of a life. It refers to films that, despite their importance to cinema history, were important in each one’s “individual history”, films which choice starts at a first intimacy with the watcher’s body, who experiments and is willing to tell their experience or, more exactly, its remaining memories. Selected from the book collection entitled The films of my life, which organization was started by Leon Cakoff at the 32nd International Film Festival of São Paulo, the narratives, sewed between images “taken with oneself”, indicate the happening of something of a lifetime in the act of reminiscing films that, for some reason, are “carried” throughout life. Something that speaks of the passage and invention of time, about different postures of body and soul, about experiencing the world and being. Therefore, the questions this thesis proposes relatively to what, it suspects, refers to an ontological movement, driven towards the self by cinematic experience, emerge from confronting these narratives and encountering the “things” they bring into view. Furthermore, composing the thesis alongside with the testimonies, the researcher’s own esthetic attitude, as a spectator and film lover herself, integrates her own collection of movies to, moving things from side to side, engage in the writing experience. The necessity of relating to others’ writing for composing her own expresses a certain benjaminian inscription in the work’s theoretical and methodological construction. The intention is not to recreate, from the debris of experience, any totality: the aim is to ruminate and problematize the theme leaning on excerpts which, dislodged from their textual origin, begin to compose poetically the text other of the thesis. Along this path of encounters and passages moves the question: how, from the “opening to the world” immanent in cinema, can take place one’s own “opening to the world”, relative to the ontological plan, in the sphere of reception – as such reception is so close to the subject of self formation, in educational practices?

Devido às dimensões cada vez mais reduzidas dos transistores e a utilização de novos materiais com baixa condutividade térmica, o desempenho de transistores avançados é afetado pelo autoaquecimento. Dispositivos sob os efeitos de autoaquecimento sofrem um aumento da sua temperatura, fazendo com que a mobilidade seja reduzida, além de comprometer a confiabilidade e gerar atrasos de sinal, trazendo impactos na eficiência de circuitos analógicos, bem como afetando o desempenho de circuitos digitais. Apesar da relevância do fenômeno, muitos estudos não o levam em consideração devido à dificuldade de sua verificação, uma vez que os métodos utilizados para transistores avançados requerem estruturas ou equipamentos especiais, que são raramente disponíveis. Dessa forma, três novas técnicas são desenvolvidas neste trabalho com o objetivo de viabilizar o estudo do efeito utilizando estruturas convencionais e medidas em corrente contínua: (i) a condutância de saída média; (ii) o método da assinatura na eficiência do transistor; (iii) a estimativa da resistência térmica utilizando somente medidas em corrente contínua. Os dois primeiros métodos são focados em uma análise qualitativa do autoaquecimento, permitindo uma verificação preliminar eficiente da presença e relevância do efeito, enquanto o terceiro método permite a extração da resistência térmica a partir do inverso da eficiência do transistor utilizando um processo iterativo, consequentemente possibilitando a obtenção do aumento da temperatura do canal devido ao autoaquecimento, com boa precisão e maior simplicidade em relação aos métodos disponíveis na literatura (com erro máximo menor que 6% para transistores de múltiplas portas em relação ao método de medidas pulsadas). Com essas técnicas, são feitas comparações da elevação de temperatura do canal entre transistores de múltiplas portas (também chamados de FinFET ou transistores 3D) e transistores de silício sobre isolante com camada de silício e óxido enterrado extremamente finos (SOI UTBB), usando simulações tridimensionais para obter condições similares de potência. Em dispositivos com menores comprimentos de canal, os FinFETs apresentaram temperaturas cerca de 60 K acima dos UTBBs. / Due to the reduction of devices\' dimensions and the use of new materials with low thermal conductivity, self-heating affects the performances of advanced transistors. Devices under self-heating effects suffer an increase of their temperature, causing mobility reduction, besides compromising reliability and generating signal delays, bringing impacts to the efficiency of analog circuits, and affecting the performance of digital circuits. Despite the relevance of the phenomenon, many studies do not consider it, given the difficulty to assess it, since the methods used for advanced transistors require special structures or equipment, which are rarely available. Hence, three new techniques are developed in this work, with the objective of permitting the study of the effect utilizing conventional structures and direct current measurements: (i) the mean output conductance method; (ii) the signature in the transistor efficiency method; (iii) the thermal resistance estimative using only direct current measurements. The first two methods are focused on a qualitative analysis of the self-heating, allowing an efficient preliminary verification of the presence and relevance of the effect, while the last allows the extraction of the thermal resistance from the inverse of the transistor efficiency through an iterative process, consequently making it possible to obtain the temperature rise in the channel due to the self-heating with a good precision and greater simplicity when compared to other methods available in the literature (with maximum error smaller than 6% for multiple gate transistors when compared to the pulsed method). With these techniques, comparisons between multiple gate transistors (also known as FinFET or 3D transistors) and silicon-on-oxide with ultra-thin body and buried oxide (SOI UTBB) are performed, utilizing three-dimensional simulations to obtain similar power conditions. In devices with smaller channel length, FinFETs presented temperatures approximately 60 K above the UTBBs.

Thèse numérisée par la Direction des bibliothèques de l'Université de Montréal.

<p>In the European research projects SIAM and 100GET, building blocks for 100Gbit Ethernet optical link have been implemented. Data are sent from a computer, modulated, converted to analog, mixed onto the RF-band, sent through an optical link, down-mixed, converted back to digital, demodulated and sent to a receiving computer. Signal Processing Devices Sweden AB is contributing to this project by their implementation PANDA. This thesis has been to study, as a proof of concept, and implement a prototype of PANDA as the component converting from digital to analog signal, the DAC, in 65nm SOI CMOS technology.</p><p>The idea of the system is to use the concept of time interleaving, where two or more components interact by performing the same operations on a different set of data, ideally scaling the performance linearly with the amount of components used.</p><p>This report presents design, implementation and verification at simulation level. It includes interfacing with off-chip components in low voltage specifications, clock generation, filtering and current-steered switches.</p>

The boom of mobile communications leads to an increasing request of low cost and low power mixed mode integrated circuits. Maturity of SOI technology, and recent progresses of MOSFET's microwave performances, explain the success of silicon as compared to III-V technologies for low-cost multigigahertz analog applications. The design of efficient circuits requires accurate, wide-band models for both active and passive elements. Within this frame, passive components fabricated in SOI technologies have been studied, and a physical model of integrated square spiral inductors has been developed. Also, the performances of integrated MOSFETs have been analyzed. New alternative structures of transistor (the Graded Channel MOSFET and the Dynamic Threshold MOSFET) have been proposed and studied from Low to High frequencies. These transistors show very interesting properties for analog, low power, low voltage, and microwave applications. Furthermore, as their fabrication processes are fully CMOS compatible, they allow us to increase the performances of a CMOS technology without any modification of its process, and without extra-cost.

Le chômage est une situation stigmatisante dont découlent bon nombre de difficultés rencontrées par les chômeurs. Tel sera le propos défendu dans cette thèse qui montrera en quoi la stigmatisation vécue par les chômeurs constitue un obstacle dans leur processus d'insertion sociale et professionnelle et peut être responsable de leur faible estime de soi. Dans un premier temps et sur base des travaux réalisés sur l'activation/menace du stéréotype (Steele et Aronson, 1995 ; Petty et Wheeler, 2001), la mauvaise réputation des chômeurs sera épinglée comme étant à l'origine de leurs faibles performances intellectuelles et de leurs intentions limitées d'entreprendre des recherches d'emploi et des activités culturelles. Dans un second temps, nous nous pencherons sur les difficultés à mettre en évidence un déficit d'estime de soi auprès des membres de groupes stigmatisés (Crocker et Major, 1989). La raison de ces difficultés réside dans la flexibilité dont font preuve les individus stigmatisés pour garder une estime de soi positive. Deux types de stratégies de protection de soi seront envisagés. La première consiste en la capacité des membres de groupes stigmatisés d'aménager leur réalité. Nous montrerons au travers de deux études que face à des situations de menace, les chômeurs minimisent leur perception de discrimination afin de protéger leur estime de soi. La seconde renvoie aux cognitions qui se révèlent être protectrices pour les membres de groupes stigmatisés. Partant du modèle « rejet-identification » développé par Branscombe, Schmitt et Harvey (1999), nous démontrerons l'importance de distinguer l'aspect personnel et groupal de la perception de discrimination au travers de populations différentes. Tout d'abord, deux études réalisées auprès de groupes communément étudiés dans le champ de la stigmatisation (le groupe des noirs et des femmes) témoigneront des effets différenciés de ces deux aspects sur l'estime de soi et montreront que la discrimination groupale ainsi que l'identification se révèlent être des pensées protectrices. Cette réflexion sera ensuite prolongée par l'étude des personnes sans emploi, ce qui nuancera quelque peu ces premières conclusions. En effet, bien que la perception de discrimination groupale soit bénéfique pour l'estime de soi des chômeurs, tel n'est pas le cas pour l'identification qui constitue pour ce groupe un véritable fardeau. L'ensemble de ces résultats sera discuté à la lumière de la littérature sur la stigmatisation et de la théorie de l'identité sociale. / Unemployment is a stigmatised situation, which takes into account of a large amount of problems encountered by jobless persons. The aim of this thesis was to defend this hypothesis and to underline the role of stigmatisation on difficulties encountered by unemployed people in their process of professional and social integration and on their weaker level of self-esteem. First, based on the theory of stereotype activation/threat (Steele et Aronson, 1995 ; Petty et Wheeler, 2001), we put forward towards two studies that the negative picture of unemployed people damages intellectual performance of jobless person and was the root of their lower intentions to entertain job research behaviours or cultural activities. After that, we will enter on the debate concerning the absence among stigmatised group members of systematic deficit on self-esteem (Crocker et Major, 1989). The hypothesis advanced to account of this absence put that stigmatised people show psychological resilience and hardiness in order to maintain a positive self worth. Two types of strategies were evolved. The first one consists of capacities from members of stigmatised group to transform their reality. In two studies, we defend the idea that when unemployed people are confronted to threatened situations, they tend to minimise discrimination in order to protect their self-esteem. The second one will present some cognition that would be protective for members of stigmatised group. Based on the “Rejection – Identification” model developed by Branscombe, Schmitt and Harvey (1999), we demonstrate the importance to distinguish between personal and group dimensions of discrimination across different populations. In a first time, two studies realised on group usually used to approach the effect of stigmatisation namely, women and black group, show the differentials effects of personal and group discrimination on self-esteem. Those studies underline that group discrimination as well as group identification were self-protective thinking. In a second time, two studies on unemployed people prolonged this reflection and give evidence that group identification was not all the time a self-protective strategies and was detrimental for some stigmatised group. Beside these first results, those studies support the protective aspect of group discrimination. All the studies would be discussed in light of stigmatised literature (Swim et Stangor, 1998; Schmitt et Branscombe, 2002) and social identity theory (Tajfel et Turner, 1979).

The motivation to study this non-classical CMOS device is necessary to face with the ITRS constraints. In the ITRS roadmap, the gate length of devices are being scaled down rapidly but this rapid scaling is not in pace with the relatively slow scaling of the gate equivalent oxide thickness which leads to a degradation in the performance of the transistor. One of the solutions to this problem is the use of non-classical devices, such as the Gate-All-Around (GAA) MOSFET. Owing to the flexibility of SOI technology, these novel devices can be adapted to this technology bringing along with it the benefit of SOI technology. One of the main advantage of building this GAA device on SOI technology is that it offers the possibility whereby the second gate is easily built into the back of the device. GAA devices are also interesting because they do not need to scale down the thickness of the gate oxide rapidly but still able to maintain a suitable thickness to avoid problems such as current leakage through the thin gate oxide by tunnelling. The objective of this research can be divided into three parts; the first is to study the feasibility of the various fabrication process for this GAA device, the second to analyse the electrical characteristics of these fabricated GAA devices from DC characteristics up to 110 GHz and the third one is the use of commercial numerical simulation softwares (IE3D, Silvaco) in order to describe the physics of these novel devices. In this study, these different structures shows advantages and disadvantages when used in either analog or RF applications. The graded-channel structure has shown that it is advantageous when used in high performance analog circuits. The advantages of this structure is further enhanced when it is combined with the double-gate structure, forming a double-gate graded channel SOI MOSFET. Optimizing in terms of doping level along the channel of the graded-channel is important to yield good electrical results. In order for these devices to be successful commercially, it is important that they are compatible with the fabrication technology and trends available today and in the near future. To confirm that these devices can be adapted into today's and tomorrow's technology, we have shown that these they are easily adaptable in the current technology. Multiple-gate devices are a new group of devices which have been identified by ITRS as potential devices to meet the demands in the future. In this study, we have shown that these multiple-gate devices do indeed show improved short-channel effects and improved analog and RF characteristics when compared to the single-gate devices in existence. One of the main contributors to these improvements is due to what is known as the “volume inversion”.

The boom of mobile communications leads to an increasing request of low cost and low power mixed mode integrated circuits. Maturity of SOI technology, and recent progresses of MOSFET's microwave performances, explain the success of silicon as compared to III-V technologies for low-cost multigigahertz analog applications. The design of efficient circuits requires accurate, wide-band models for both active and passive elements. Within this frame, passive components fabricated in SOI technologies have been studied, and a physical model of integrated square spiral inductors has been developed. Also, the performances of integrated MOSFETs have been analyzed. New alternative structures of transistor (the Graded Channel MOSFET and the Dynamic Threshold MOSFET) have been proposed and studied from Low to High frequencies. These transistors show very interesting properties for analog, low power, low voltage, and microwave applications. Furthermore, as their fabrication processes are fully CMOS compatible, they allow us to increase the performances of a CMOS technology without any modification of its process, and without extra-cost.

Le chômage est une situation stigmatisante dont découlent bon nombre de difficultés rencontrées par les chômeurs. Tel sera le propos défendu dans cette thèse qui montrera en quoi la stigmatisation vécue par les chômeurs constitue un obstacle dans leur processus d'insertion sociale et professionnelle et peut être responsable de leur faible estime de soi. Dans un premier temps et sur base des travaux réalisés sur l'activation/menace du stéréotype (Steele et Aronson, 1995 ; Petty et Wheeler, 2001), la mauvaise réputation des chômeurs sera épinglée comme étant à l'origine de leurs faibles performances intellectuelles et de leurs intentions limitées d'entreprendre des recherches d'emploi et des activités culturelles. Dans un second temps, nous nous pencherons sur les difficultés à mettre en évidence un déficit d'estime de soi auprès des membres de groupes stigmatisés (Crocker et Major, 1989). La raison de ces difficultés réside dans la flexibilité dont font preuve les individus stigmatisés pour garder une estime de soi positive. Deux types de stratégies de protection de soi seront envisagés. La première consiste en la capacité des membres de groupes stigmatisés d'aménager leur réalité. Nous montrerons au travers de deux études que face à des situations de menace, les chômeurs minimisent leur perception de discrimination afin de protéger leur estime de soi. La seconde renvoie aux cognitions qui se révèlent être protectrices pour les membres de groupes stigmatisés. Partant du modèle « rejet-identification » développé par Branscombe, Schmitt et Harvey (1999), nous démontrerons l'importance de distinguer l'aspect personnel et groupal de la perception de discrimination au travers de populations différentes. Tout d'abord, deux études réalisées auprès de groupes communément étudiés dans le champ de la stigmatisation (le groupe des noirs et des femmes) témoigneront des effets différenciés de ces deux aspects sur l'estime de soi et montreront que la discrimination groupale ainsi que l'identification se révèlent être des pensées protectrices. Cette réflexion sera ensuite prolongée par l'étude des personnes sans emploi, ce qui nuancera quelque peu ces premières conclusions. En effet, bien que la perception de discrimination groupale soit bénéfique pour l'estime de soi des chômeurs, tel n'est pas le cas pour l'identification qui constitue pour ce groupe un véritable fardeau. L'ensemble de ces résultats sera discuté à la lumière de la littérature sur la stigmatisation et de la théorie de l'identité sociale. / Unemployment is a stigmatised situation, which takes into account of a large amount of problems encountered by jobless persons. The aim of this thesis was to defend this hypothesis and to underline the role of stigmatisation on difficulties encountered by unemployed people in their process of professional and social integration and on their weaker level of self-esteem. First, based on the theory of stereotype activation/threat (Steele et Aronson, 1995 ; Petty et Wheeler, 2001), we put forward towards two studies that the negative picture of unemployed people damages intellectual performance of jobless person and was the root of their lower intentions to entertain job research behaviours or cultural activities. After that, we will enter on the debate concerning the absence among stigmatised group members of systematic deficit on self-esteem (Crocker et Major, 1989). The hypothesis advanced to account of this absence put that stigmatised people show psychological resilience and hardiness in order to maintain a positive self worth. Two types of strategies were evolved. The first one consists of capacities from members of stigmatised group to transform their reality. In two studies, we defend the idea that when unemployed people are confronted to threatened situations, they tend to minimise discrimination in order to protect their self-esteem. The second one will present some cognition that would be protective for members of stigmatised group. Based on the “Rejection – Identification” model developed by Branscombe, Schmitt and Harvey (1999), we demonstrate the importance to distinguish between personal and group dimensions of discrimination across different populations. In a first time, two studies realised on group usually used to approach the effect of stigmatisation namely, women and black group, show the differentials effects of personal and group discrimination on self-esteem. Those studies underline that group discrimination as well as group identification were self-protective thinking. In a second time, two studies on unemployed people prolonged this reflection and give evidence that group identification was not all the time a self-protective strategies and was detrimental for some stigmatised group. Beside these first results, those studies support the protective aspect of group discrimination. All the studies would be discussed in light of stigmatised literature (Swim et Stangor, 1998; Schmitt et Branscombe, 2002) and social identity theory (Tajfel et Turner, 1979).

A 130 nm partially depleted silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) technology is evaluated with respect to analog circuit implementation. We perform the evaluation through implementation of three flash analog-to-digital converters (ADCs). Our study indicate that to fully utilize the potential performance advantages of the SOI CMOS technology the partially depleted SOI CMOS technology should be replaced by a fully depleted technology. The manufacturing difficulties regarding the control of the thin-film thickness must however first be solved. A strong motivator for using the SOI CMOS technology instead of bulk CMOS seems to be the smaller gate leakage power consumption. The targeted applications in mind for the ADCs are read channel and ultra wideband radio applications. These applications requires a resolution of at least four to six bits and a sampling frequency of above 1 GHz. Hence the flash ADC topology is chosen for the implementations. In this work we do also propose enhancements to the flash ADC converter. Further, this work also investigates introduction of dynamic element matching (DEM) into a flash ADC. A method to introduce DEM into the reference net of a flash ADC is proposed and evaluated. To optimize the performance of the whole system and derive the specifications for the sub-blocks of the system it is often desired to use a top-down design methodology. To facilitate the top-down design methodology the ADCs are modeled on behavioral level using MATLAB and SpectreHDL. The modeling results are used to verify the functionality of the proposed circuit topologies and serve as a base to the circuit design phase. The first flash ADC implementation has a conventional topology. It has a resistor net connected to a number of latched comparators and employs a ones-counter thermometer-to-binary decoder. This ADC serves as a reference for evaluating the other topologies. The measurements indicate a maximum sampling frequency of 470 MHz, an SNDR of 26.3 dB, and an SFDR of about 29 to 35 dB. The second ADC has a similar topology as the reference ADC, but its thermometer-to-binary decoder is based on 2-to-1 multiplexers buffered with inverters. This gives a compact decoder with a regular structure and a short critical path. The measurements show that it is more efficient in terms of power consumption than the ones-counter decoder and it has 40 % smaller chip area. Further, the SNDR and SFDR are similar as for the reference ADC, but its maximum sampling frequency is about 660 MHz. The third ADC demonstrates the introduction of DEM into the reference net of a flash ADC. Our proposed technique requires fewer switches in the reference net than other proposals. Our technique should thereby be able to operate at higher sampling and input frequencies than compared with the other proposals. This design yields information about the performance improvements the DEM gives, and what the trade-offs are when introducing DEM. Behavioral level simulations indicate that the SFDR is improved by 11 dB in average when introducing DEM. The transistor level simulations in Cadence and measurements of the ADC with DEM indicates that the SFDR improves by 6 dB and 1.5 dB, respectively, when applying DEM. The smaller improvement indicated by the measurements is believed to be due to a design flaw discovered during the measurements. A mask layer for the resistors of the reference net is missing, which affects their accuracy and degrades the ADC performance. The same reference net is used in the other ADCs, and therefore degrades their performance as well. Hence the measured performance is significantly lower than indicated by the transistor level simulations. Further, it is observed that the improved SFDR is traded for an increased chip area and a reduction of the maximum sampling frequency. The DEM circuitry impose a 30 % larger chip area.