Conselho Nacional de Desenvolvimento CientÃfico e TecnolÃgico / A possibilidade de se obter sistemas bidimensionais a partir de materiais com estrutura cristalina lamelar tem atraÃdo muitas pesquisas nesses materiais, pois as propriedades de poucas camadas diferem bastante dos seus respectivos bulks, o que abre uma gama de possibilidades em aplicaÃÃes tecnolÃgicas. O fÃsforo negro apresenta muitas propriedades interessantes, dentre elas, um gap de energia, que garante a construÃÃo de dispositivos eletrÃnicos (bem diferente do grafeno que à um semi metal sem gap). Esse gap pode ser ajustado aumentando o nÃmero de camadas, variando de 0.3 eV para uma monocamada atà cerca de 2.0 eV para o bulk, cobrindo um espectro de energia de gap relativamente grande de dispositivos Ãpticos. AlÃm disso, esse material à altamente anisotrÃpico em sua estrutura de bandas. Neste trabalho, derivamos a aproximaÃÃo da massa efetiva a partir do modelo tight-binding e usamos o Hamiltoniano aproximado para estudar nanoestruturas de fÃsforo negro. Nesse modelo, o carÃter anisotrÃpico do fÃsforo negro à refletido na diferenÃa entre as massas efetivas quando se toma diferentes direÃÃes. Primeiramente, comparamos os resultados numÃrico obtido atravÃs da tÃcnica de diferenÃas finitas com o modelo analÃtico para um ponto quÃntico circular, que devido à estrutura de bandas ter um contorno elÃptico, à descrito pelas equaÃÃes de Mathieu quando se resolve a equaÃÃo de SchrÃdinger. Os resultados analÃtico e numÃrico mostram boa concordÃncia. Ainda na aproximaÃÃo da massa efetiva, estudamos o efeito de campos externos sobre um anel quÃntico de fÃsforo negro e analisamos o efeito da interaÃÃo entre esses campos e a anisotropia de massa do sistema sobre seus estados eletrÃnicos. Devido à anisotropia de massa, esse sistema quando sujeito a um campo magnÃtico, nÃo apresenta oscilaÃÃes Aharonov-Bohm, que podem ser recuperadas aplicando-se um potencial de confinamento elÃptico. Estudamos tambÃm o efeito de um campo elÃtrico nas direÃÃes x e y em um anel quÃntico, e verificamos como a energia à alterada pelo campo. Nossos resultados mostram que, como consequÃncia de uma localizaÃÃo da funÃÃo de onda causada pela anisotropia de massa, os nÃveis de energia decrescem quadraticamente (efeito Stark) com o campo aplicado apontando para a direÃÃo armchair, enquanto um decrÃscimo quase linear (efeito Stark linear) aparece para um campo aplicado na direÃÃo zigzag, com uma sÃrie de estados que se cruzam, levando a um comportamento semelhante ao de um poÃo quÃntico duplo sob um campo elÃtrico perpendicular a ele. / The possibility of obtaining two-dimensional systems from layered materials has been attracting a lot of research on these materials, since their few layer properties are very different from their respective bulk ones, which opens up great possibilities in technological applications. Black phosphorus exhibit several interesting properties, among them, a direct energy gap, that enables the possibility of fabricating electronic devices (in contrast e.g. with the gapless semi-metallic graphene), and which can be tuned by the number of layers, varying from 0.3 eV for a bulk up to 2.0 eV for a monolayer, thus covering a relatively large range of the energy spectrum for optical devices. Besides, the fact that this is a very anisotropic material has brought even more attention to it, towards novel ways of exploring this anisotropy in new technologies. In this work, we have derived the effective mass approximation from the tight binding model and used the out coming approximate Hamiltonian to study nanostructures based on monolayer black phosphorus. In this model, the anisotropic features of black phosphorus are reflected in the difference between effective masses in different directions. Firstly, we compare the finite difference methods with the analytical solution for a circular quantum dot, which, due to its elliptical contour of energy bands, is given by Mathieu functions for solving the resulting SchrÃdinger equation. With this comparison, we verify the compatibility between these methods. Within the effective mass approximation, we investigate the effect of external electromagnetic fields on a black phosphorus quantum ring, thus analysing the effect of the interplay between these fields and the system anisotropy on its electronic states. Due to the anisotropy, under an applied magnetic field, this ring does not exhibit Aharonov-Bohm oscillations, which can be recovered by assuming an elliptic ring-like confinement. We also investigate the effect of an external electric field applied in x and y directions in a black phosphorus quantum ring on its energy levels. Our results show that, as a consequence of a wave function localization induced by mass anisotropy, energy levels decay quadratically (Stark effect) with the field if it is applied along the armchair direction, whereas an almost linear Stark effect, along with a series of crossing excited states, is observed for a field applied in the zigzag direction, leading to a behavior that is in close resemblance to a double quantum well under a perpendicular electric field.

L’objectif de ce mémoire est de présenter une étude aussi complète que possible de l’effet Stark dans les toupies asymétriques de type X2Y4 possédant le groupe de symétrie D2h et de l’appliquer au problème de la spectroscopie de l’éthylène piégé dans une zéolithe. Pour la première fois, un formalisme tensoriel adapté à l’étude de l’effet Stark pour la chaine de groupes O(3) D2h a été développé. Parallèlement au développement du modèle théorique, des programmes informatiques ont été mis au point sous la forme d’une nouvelle génération de logiciel appelé D2hTDS-ST utilisant une base plus simple, permettant une économie en temps de calcul. Sur la base des outils théoriques et informatiques ainsi qu’à partir des spectres expérimentaux enregistrés au laboratoire, nous avons fait une première estimation de la valeur du champ électrique effectif moyen produit par la silicalite-1. Les valeurs du champ électrique obtenues avec notre méthode sont cohérentes avec les valeurs obtenues par les calculs ab initio PBE1PBE6-31++G(2d,2p). / The objective of this report is to present a study as complete as possible of the Stark effect in the asymmetric top molecules of X2Y4 type possessing the D2h symmetry group and to apply it to the problem of the spectroscopy of the ethylene molecule trapped in a zeolite. For the first time, a tensorial formalism adapted to the study of the Stark effect for the O(3) D2h group chain was developed. In parallel, a computer package was worked out as a new generation of software called D2hTDS-ST using a simpler basis, allowing an economy in the calculation time. On the basis of the theoretical and computing tools as well as from the experimental spectra, recorded in the laboratory, we made a first estimation of the average effective electric field produced by silicalite-1. The values of the electric field obtained with our method are coherent with the values obtained by the ab initio PBE1PBE6-31++G(2d,2p) calculations.

No description available.

InGaN based light emitting devices operating in the blue and near UV spectral regions are commercialized and used in many applications. InGaN heterostructures experience compositional inhomogeneity and thus potential fluctuations, such that regions of higher indium composition are formed and correspond to lower potentials. The indium rich regions form localization centers that save carriers from non-radiative recombination at dislocations, thus despite the large defect density, their quantum efficiency are surprisingly large. However, the conventional c-plane InGaN QWs suffer from high internal piezoelectric and spontaneous fields. These fields are detrimental for the performance of such structures as they lead to the quantum confined stark effect causing red-shift of the emission as well as reducing the electrons and holes wavefunctions overlap, thereby reducing the radiative recombination rate. However, growth of InGaN QWs on semipolar and nonpolar planes greatly reduced the polarization fields. Semipolar and nonpolar QWs experience an outstanding property which is polarized luminescence, opening a new frontier for applications for InGaN emitting devices. While nonpolar QWs have larger degree of polarized emission than semipolar QWs, semipolar QWs can emit in longer wavelengths due to their higher indium uptake. In this thesis, semipolar 20¯21 and nonpolar m-plane InGaN/GaN QWs were investigated. Photoluminescence, spectral and polarization dynamics were all studied in order to form a whole picture of the carrier dynamics in the QWs. Time resolved photoluminescence measurements were conducted for following carriers distribution between extended and localized states. Both the semipolar and nonpolar samples showed efficient luminescence through short radiative recombination times, as well as carrier localization in lower potential sites after thermal activation of excitons. Carrier localization was found to be benign as it didn’t degrade the performance of the samples or decrease the polarization ratio of their emission. However, the structures showed modest potential variations with the absence of deep localization centers or quantum dots. High polarization ratios were measured for both samples, which is well-known for nonpolar QWs. The high polarization ratio for the semipolar sample is of great importance, thus semipolar 20¯21 QWs should be considered for longer wavelength emitters with highly polarized spontaneous emission.

The dynamic (ac) Stark effect refers to the energy shifting of electronic states induced by an oscillating electric field. Conveniently, the magnitude of the ac Stark shift scales with the square of the electric field amplitude, i.e. with light intensity. Using this fundamental effect to reshape molecular potentials, and steer the course of chemical reactions, is known as dynamic Stark control. The aim of this study was to investigate the dynamic Stark effect on the photodissociation of molecular oxygen (O2) in the Schumann-Runge continuum, SRC (130–175 nm). Absorption in the SRC leads to dissociation via the so-called B state, yielding O(1D) + O(3P), or the J state, forming O(3P) + O(3P). Both of these dissociative excited states may be well-described in terms of mixed valence and Rydberg state character, in which each of the two states are strongly coupled to a Rydberg state of similar symmetry. Due to the mixed character of the B and J states, simulations predict that dynamic Stark shifting of the coupled Rydberg states leads to a dramatic change in dissociation channel branching ratio, as well as a red-shift of the absorption spectrum. This study aimed at experimentally testing this theoretical prediction. A 400-nm femtosecond laser pulse was employed as a combined pump and control field, simultaneously inducing a three-photon transition into the SRC and ac Stark shifting the potentials. A detection scheme to detect the changes in absorption of the B channel with pump pulse intensity was devised and implemented. The chosen detection scheme, in which emission at 762 nm from the O2(b−X) transition is measured, in principle monitors O(1D) from the B channel via an energy transfer reaction. The experimental results overall show consistency between simulations and experiment. The measured 762-nm emission exhibited a pump pulse intensity-dependence that likely reflects the dynamic Stark reshaping of the excited state potentials. However, saturation is clearly present in the data, complicating data interpretation. Furthermore, deviations between experiment and simulations are large at high pulse intensities, indicating that O(1D) is additionally generated by absorption into higher excited states. Finally, structured features that deviate from the simulations at low pulse intensities may possibly be assigned to vibrational resonances to high-lying Rydberg states by four-photon absorption. / Den dynamiska (ac) Starkeffekten beskriver energiskiftet för elektroniska tillstånd som induceras av ett oscillerande elektriskt fält. Storleken på detta skift ökar med kvadraten av den elektriska fältstyrkan, det vill säga med ljusintensitet. Tillämpningen av denna fundamentala effekt i syfte att omforma molekylära potentialer, och därmed styra kemiska reaktioner, kallas för dynamisk Starkkontroll. Syftet med denna studie var att undersöka hur den dynamiska Starkeffekten påverkar den fotoinducerade dissociationen av molekylärt syre (O2) inom Schumann-Runge kontinuumet, SRC (130–175 nm). Absorption i SRC resulterar i dissociation via det så kallade B-tillståndet, som bildar O  (1D) + O(3P), eller via J-tillståndet, som leder till bildandet av O(3P) + O(3P). Båda dessa dissociativa tillstånd har en karaktär som kan beskrivas som en blandning av ett valenstillstånd och ett Rydbergstillstånd.  Simuleringar antyder att, till följd av valens- och Rydbergskaraktären hos B och J-tillståndet, leder dynamisk Starkskiftning av de kopplade Rydbergstillstånden till en dramatisk ändring i det relativa utbytet för de två dissociationskanalerna, samt till ett röd- skift av absorptionsspektrumet. Denna studie hade som ändamål att experimentellt testa denna teoretiska förutsägelse. En femtosekundslaser vid 400 nm användes som kombinerat excitations- och kontrollfält, vilket parallellt inducerar en trefoton-övergång in i SRC och ac Starkskiftar potentialerna. En detektionsmetod som mäter variationer i absorptionen för B-kanalen som funktion av pulsintensitet designades och implementerades. I den valda metoden detekteras emission vid 762 nm från O2(b − X)-övergången, vilket i sin tur ger en mätning av O(1D) som genereras från B- kanalen via en energiöverföringsreaktion. De experimentella resultaten stämmer relativt väl överens med simuleringarna. Den uppmätta emissionen vid 762 nm uppvisar ett intensitetsberoende som i stora drag reflekterar ac Stark- skiftningen av potentialerna. Utöver detta finns dock ett stort bidrag från mättnad, vilket försvårar tolkningen av datan. Vi-dare avviker den experimentella datan betydligt vid höga pulsintensiteter, vilket sannolikt tyder på att O(1D) även genereras genom absorption till högre exciterade tillstånd. Slutligen ob-serveras mindre, men tydliga avvikelser vid låga pulsintensiteter. Dessa kan möjligen tillordnas vibrationsresonanser med högre Rydbergstillstånd genom fyrfoton-absorption. ​

Made available in DSpace on 2017-07-24T19:38:03Z (GMT). No. of bitstreams: 1 Engelbert de Souza Folkuenig.pdf: 8804704 bytes, checksum: 956aed781c64725afe3d6dc23b53947c (MD5) Previous issue date: 2010-05-10 / Several electrochemical processes, such as electrocatalysis of organic substrates, make use of mediators. One of the mediators is the most commonly used anion methanesulfonate, CH3SO3, which has several advantages for such use, and chemical stability considered one of them. However, experimental studies indicate the possibility of this compound suffer the adsorption and decomposition on platinum electrodes. To get an understanding at the molecular level these processes, computer simulations were performed with the aid of the semi-empirical PM6. The cluster approach was used in the modeling of platinum surfaces with crystallographic orientations (111) and (100). The symmetries of most stable adsorption calculated for the anion in these areas correspond to the experimental data: C3V symmetry in (111) surface and C1 in (100) surface. To simulate the potential applied to the electrode, external electric fields with a positive sign and perpendicular to the surface of the clusters were applied. Changes in the lengths and angles of bonds adsorbed anion, as well as its values of dipole moment were observed. The infrared spectra of the systems anion-clusters were calculated and the values for the Stark tunning rate (Δstark) of mode δs CH3 were compared with the experimental value. Both for the free anion and for systems where the anion is adsorbed, it was found that the values of Δstark assumed negative values (indicating that the frequency of the vibrational mode δs CH3 diminished with increasing external eletric field), opposite to the experimental positive value (frequency mode δs CH3 increases with the increase in potential). Only with the addition of water molecules in the systems studied, in order to simulate the aqueous solvent is that the values of Δstark started to assume a positive value. The comparison showed the importance of the presence of water molecules in the simulation of an electrochemical system and prompted a detailed analysis of the frontier orbitals involved in this process. It was found that the dipole-dipole coupling between water molecules and the adsorbed anion is responsible for the Stark effect, while the electrostatic interactions between various molecules adsorbed anion affect the intensity of the absorption band mode δs CH3 in the spectra calculated. In (100) surfaces, the joint action of external field and water molecules, lead the anion molecule to adopt the adsorption geometries more inclined to systems without water molecules, indicating that this may be an important factor in explaining the greater reactivity of the anion on the surface. / Vários processos eletroquímicos, como por exemplo a eletrocatálise de substratos orgânicos, fazem uso de mediadores. Um dos mediadores mais utilizados é o ânion metanossulfonato, CH3SO3¯, que apresenta várias vantagens para tal uso, sendo a estabilidade química considerada uma delas. No entanto, estudos experimentais apontam para a possibilidade desse ânion sofrer processos de adsorção e decomposição em eletrodos de platina. Para se obter uma compreensão em nível molecular desses processos, simulações computacionais foram efetuadas com auxílio do método semi-empírico PM6. A aproximação de cluster foi utilizada na modelagem de superfícies de platina com orientações cristalográficas (111) e (100). As simetrias de adsorção mais estáveis calculadas para o ânion nessas superfícies correspondem aos dados experimentais: simetria C3v em superfície (111) e C1 em superfície (100). Para simular o potencial aplicado ao eletrodo, campos elétricos externos de sinal positivo e perpendiculares à superfície dos clusters foram aplicados. Alterações nos comprimentos e ângulos de ligações do ânion adsorvido, bem como em seus valores de momento dipolar foram observados. Os espectros de infravermelho dos sistemas ânion-clusters foram calculados e os valores para a taxa de variação Stark (Δstark) do modo δs CH3 foram comparados com o valor experimental. Tanto para o ânion livre quanto para os sistemas onde o ânion se encontra adsorvido, verificou-se que os valores de Δstark assumiam valores negativos (indicando que a frequência vibracional do modo δs CH3 diminuía com o aumento da intensidade do campo externo), ao contrário do valor experimental, positivo (frequência do modo δs CH3 aumenta com o aumento do potencial). Apenas com a adição de moléculas de água aos sistemas estudados, de modo a simular o solvente aquoso, é que os valores de Δstark passaram a assumir um valor positivo. Essa comparação revelou a importância da presença de moléculas de água na simulação de um sistema eletroquímico e motivou uma análise pormenorizada dos orbitais de fronteira envolvidos nesse processo. Verificou-se que a interação dipolo-dipolo entre as moléculas de água e o ânion adsorvido é o responsável pelo efeito Stark, enquanto as interações eletrostáticas entre várias moléculas do ânion adsorvidas afetam a intensidade da banda de absorção do modo δs CH3 nos espectros calculados. Nas superfícies (100), a ação conjunta do campo externo e das moléculas de água, levam a molécula do ânion a adotar geometrias de adsorção mais inclinadas em relação aos sistemas sem as moléculas de água, indicando que este pode ser um fator importante para explicar a maior reatividade do ânion sobre esse tipo de superfície.

This PhD thesis is devoted to study electro-optic properties of Gemanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells (MQWs) for light modulation, detection, and emission on Si platform. It reports the first development of high speed, low energy Ge/SiGe electro-absorption modulator in a waveguide configuration based on the quantum-confined Stark effect (QCSE), demonstrates the first Ge/SiGe photodiode with high speed performance compatible with 40 Gb/s data transmission, and realizes the first Ge/SiGe light emitting diode based on Ge direct gap transition at room temperature. Extensive DC and RF measurements were performed on each tested prototype, which was realized using the same epitaxial growth and fabrication process. Simple theoretical models were employed to describe experimental properties of the Ge/SiGe MQWs. The studies show that Ge/SiGe MQWs could potentially be employed as a new photonics platform for the development of a high speed optical link fully compatible with silicon technology.

Ce travail de thèse consiste à visualiser sur un détecteur sensible en position les oscillations spatiales des électrons lents (~ meV) émis par photoionisation au seuil en présence d’un champ électrique extérieur. La figure d’interférence obtenue représente quantiquement le module carré de la fonction d’onde électronique. Ce travail fondamental nous permet d’avoir accès à la dynamique électronique quelques µm autour de l’atome et donc de mettre en évidence plusieurs mécanismes quantiques (champ coulombien, interaction électron/électron..) se déroulant à l’échelle atomique. Malgré la présence d’un cœur électronique quoique limité dans Li, nous avons réussi, expérimentalement et pour la première fois, à visualiser la fonction d’onde associée aux états Stark quasi-discrets couplés au continuum d’ionisation. En outre, à l’aide des simulations quantiques de propagation du paquet d’ondes, basées sur la méthode de « Split-operator », nous avons réalisé une étude complète sur les atomes H, Li et Cs tout en dévoilant les effets significatifs des résonances Stark. Un très bon accord, sur et hors résonances, a été obtenu entre les résultats simulés et les résultats expérimentaux. Par ailleurs, nous avons développé un modèle analytique généralisable permettant de comprendre profondément le fonctionnement d’un spectromètre de VMI. Ce modèle repose sur l’approximation paraxiale, il est basé sur un calcul d’optique matricielle en faisant une analogie entre la trajectoire électronique et le rayon lumineux. Un excellent accord a été obtenu entre les prédictions du modèle et les résultats expérimentaux. / This work of thesis aims to visualize, on a position sensitive detector, the spatial oscillations of slow electrons (~meV) emitted by a threshold photoionization in the presence of an external electric field. The interference figure obtained represents the square magnitude of electronic wavefunction. This fundamental work allows us to have access to the electronic dynamics and thus to highlight several quantum mechanisms that occur at the atomic scale (field Coulomb, electron/electron interaction..). Despite the presence an electronic core in Li atom, we have succeeded, experimentally and for the first time, to visualize the wave function associated with the quasi-discrete Stark states coupled to the ionization continuum. Besides, using simulations of wave packet propagation, based on the "Split-operator” method, we have conducted a comprehensive study of the H, Li and Cs atoms while revealing the significant effects of the Stark resonances. A very good agreement, on and off resonances, was obtained between simulated and experimental results. In addition, we have developed a generalized analytical model to understand deeply the function of VMI spectrometer. This model is based on the paraxial approximation; it is based on matrix optics calculation by making an analogy between the electronic trajectory and the light beam. An excellent agreement was obtained between the model predictions and the experimental results.

Cette thèse est consacrée à l’étude des propriétés optiques et optoélectroniques autour de la bande interdite directe des structures à puits quantiques Ge/SiGe pour la modulation, la photodétection et l’émission de lumière sur la plateforme silicium. Les principaux composants réalisés sont : un modulateur optique en guide d’onde, rapide et à faible puissance électrique, basé sur l’Effet Stark Confiné Quantiquement, les premières photodiodes Ge/SiGe dont le comportement fréquentiel est compatible avec les transmissions de données à 40 Gbit/s, et la première diode à électroluminescence à puits quantiques Ge/SiGe, base sur la transition directe de ces structures et fonctionnant à température ambiante. Les caractérisations statiques et fréquentielles ont été réalisées sur l’ensemble des composants, qui ont tous été fabriqués avec la même structure épitaxiée et les mêmes procédés de fabrication. Des modèles théoriques simples ont ensuite été utilisés pour décrire analyser les comportements observés. Finalement les études menées permettent de conclure que les structures à puits quantiques Ge/SiGe sont un candidat de choix pour la réalisation d’une nouvelle plateforme photonique à haut débit, totalement compatible avec les technologies silicium. / This PhD thesis is devoted to study electro-optic properties of Gemanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells (MQWs) for light modulation, detection, and emission on Si platform. It reports the first development of high speed, low energy Ge/SiGe electro-absorption modulator in a waveguide configuration based on the quantum-confined Stark effect (QCSE), demonstrates the first Ge/SiGe photodiode with high speed performance compatible with 40 Gb/s data transmission, and realizes the first Ge/SiGe light emitting diode based on Ge direct gap transition at room temperature. Extensive DC and RF measurements were performed on each tested prototype, which was realized using the same epitaxial growth and fabrication process. Simple theoretical models were employed to describe experimental properties of the Ge/SiGe MQWs. The studies show that Ge/SiGe MQWs could potentially be employed as a new photonics platform for the development of a high speed optical link fully compatible with silicon technology.

Designs for deep ultraviolet (DUV) edge emitting laser diodes (LDs) based on the wurtzite III-nitride (III-N) material system are presented. A combination of proprietary and commercial advanced semiconductor LD simulation software is used to study the operation of III-N based DUV LDs theoretically. Critical factors limiting device performance are identified based on an extensive literature survey. A comprehensive design parameter space is investigated thoroughly with the help of advanced scripting capabilities. Several design strategies are proposed to eliminate the critical problems completely or partially. A DUV LD design is proposed based exclusively on AlInN active layers grown epitaxially on bulk AlN substrates because AlInN offers a promising alternative to AlGaN for the realization of LDs and LEDs operating in the DUV regime. The proposed AlInN-based design also features a tapered electron blocking layer (EBL) instead of a homogeneous one. Tapered EBLs redistribute the interfacial polarization charge volumetrically throughout the entire EBL thickness via compositional grading, and eliminate the parasitic inversion layer charge. AlGaN based DUV LD designs are explored also because at present, it may be difficult to grow AlInN epitaxially with superior crystalline quality. Polarization charge matching is proposed to improve electron and hole wavefunction overlap within the active region. Although the strategy of polarization charge matching has already been proposed in the literature to enhance performance of visible wavelength LEDs and LDs, the proposed design presents the first demonstration that polarization charge matching is also feasible for DUV LDs operating at sub-300 nm wavelengths. A lateral current injection (LCI) LD design is proposed featuring polarization-charge-matched barriers and regrown Ohmic contacts to avoid a group of issues related to the highly inefficient p-type doping of wide bandgap III-N materials in vertical injection designs. The proposed design partially decouples the problem of electrical injection from that of optical confinement. Although the idea of an LCI LD design has been proposed in the literature in the 90s to be used as longer wavelength active sources in optoelectronic integrated circuits using GaInAsP/InP and related material systems, the proposed design is the first theoretical demonstration that this concept can be applied to DUV LDs based on III-N material system. To solve the problem of hole transport in vertical injection designs, a DUV LD design based exclusively on AlGaN material system is presented, featuring an inverse-tapered p-waveguide layer instead of an EBL. Several EBL designs are investigated, and compared with conventionally-tapered EBL design. Through judicious volumetric redistribution of fixed negative polarization charge, inverse tapering may be exploited to achieve nearly flat valence band profiles free from barriers to hole injection into the active region, in contrast to conventional designs. Numerical simulations demonstrate that the inverse tapered strategy is a viable solution for efficient hole injection in vertical injection DUV LDs operating at shorter wavelengths (< 290 nm).