My master’s thesis deals with methods of measuring the ultrasonic blood flow blood vessel with a detailed focus on Doppler ultrasound systems, which find application in the diagnosis of superficial vascular and obstetrics. The thesis is described a proposal indicating polydirectional Doppler system with a continuous carrier wave frequency of 4 MHz, the intensity of ultrasound 100 mW/cm2 and diameter D-shaped transducers 8 mm. As a result, the indicator will be able to measure blood flow velocity in the range of 5-40 cm/s, which appears to 3.5 digit display. After describing important theoretical assumptions, the work pays block diagram indicator. Furthermore, it examines the various functional blocks on the requirements imposed on them. It looks at the options of each functional block, and finally describes the implementation of the selected option and including peripheral solutions. Great attention is paid to the power of the indicator, where the power supply will be used 9 V battery. Create a symmetric voltage for operate amplifier and other auxiliary voltage will procure DC/DC converters. In conclusion, the work is located around the perimeter solutions indicator. The following draft for the production of double-sided PCB, its installation and a list of elements. The outcome of the thesis is complete documentation for the implementation of an indicator of blood flow, which allows us to obtain information on throughput vessels, especially the lower and upper limbs.

Tato disertační práce pojednává o návrhu nových funkčních bloků použitelných v oblasti zpracování analogového signálu. Jde o obvody v proudové módu, které mohou ve vhodné konfiguraci pracovat v proudovém i v napěťovém módu. To umožnílo získat velmi nadějné výsledky v soustavách s nízkým napájecím napětím. Mnohostrannost těchto obvodů nalezne uplatnění v mnoha aplikacích. Zesilovač s proudovou zpětnou vazbou byl zavolen jako hlavní stavební blok pro detailní zkoumání funkce obvodů s RC operační sítí. Tato disertační práce pojednává o studiu, syntéze a návrhových aspektech realizace nových imitančních funkcí, jmenovitě induktivních a superkapacitních, proudových a napěťových konvejorech, kmitočtových filtrech s velkou jakostí, integrátorech a diferenciátorech, fázovacích členech s neminimální fází a napětím řízených oscilátorech. Disertační práce se detailně zabývá těmito novými bloky, které jsou popsány teoreticky a vyhodnoceny na základě simulací vlastností.

This research work has made an effort to understand a novel line of radio frequency power amplifiers (RFPAs) that address initiatives for efficiency enhancement and linearity compensation to harmonize the fifth generation (5G) campaign. The objective is to enhance the performance of an orthogonal frequency division multiplexing-long term evolution (OFDM-LTE) transmitter by reducing the nonlinear distortion of the RFPA. The first part of this work explores the design and implementation of 15.5 W class AB RF power amplifier, adopting a balanced technique to stimulate efficiency enhancement and redeeming exhibition of excessive power in the transmitter. Consequently, this work goes beyond improving efficiency over a linear RF power amplifier design; in which a comprehensive investigation on the fundamental and harmonic components of class F RF power amplifier using a load-pull approach to realise an optimum load impedance and the matching network is presented. The frequency bandwidth for both amplifiers was allocated to operate in the 2.620-2.690 GHz of mobile LTE applications. The second part explores the development of the behavioural model for the class AB power amplifier. A particular novel, Hammerstein-Wiener based model is proposed to describe the dynamic nonlinear behaviour of the power amplifier. The RF power amplifier nonlinear distortion is approximated using a new linear parameter approximation approach. The first and second-order Hammerstein-Wiener using the Normalised Least Mean Square Error (NLMSE) algorithm is used with the aim of easing the complexity of filtering process during linear memory cancellation. Moreover, an enhanced adaptive Wiener model is proposed to explore the nonlinear memory effect in the system. The proposed approach is able to balance between convergence speed and high-level accuracy when compared with behavioural modelling algorithms that are more complex in computation. Finally, the adaptive predistorter technique is implemented and verified in the OFDM transceiver test-bed. The results were compared against the computed one from MATLAB simulation for OFDM and 5G modulation transmitters. The results have confirmed the reliability of the model and the effectiveness of the proposed predistorter. / Fundacão para a Ciência e a Tecnologia, Portugal, under European Union’s Horizon 2020 research and innovation programme ... grant agreement H2020-MSCA-ITN- 2016 SECRET-722424 I also acknowledge the role of the National Space Research and Development Agency (NASRDA) Sokoto State Government Petroleum Technology Trust Fund (PTDF)

No description available.

This work explores the application of various power amplifier design techniques for mobile communications. Several circuit configurations including class A amplifier, Doherty amplifier and power combining amplifier have been developed, which are to improve the performance of power amplifiers in terms of power added efficiency transmission power and bandwidth. In chapter 2, the cascode PA adopting tuning capacitor structure is proposed and implemented to enhance the efficiency. In chapter 3, a novel Doherty amplifier configuration using a 3-stage polyphase filter as power splitter is introduced. Moreover, the second harmonic cancellation function of balun combining PA is analysed and verified with experimental results in chapter 4. The fully integrated cascode class A amplifier adopts RC negative feedback, which is to enhance bandwidth and input/output matching. The integrated choke inductor compensating the parasitic capacitor of transistors has very low quality factor, which decreases the efficiency of the power amplifier. To reduce the inductance value of the choke inductor, a tuning capacitor is connected in parallel with the choke inductor. As a result, the inductor resistance is reduced as well, which diminishes the power consumption induced by the resistance of the choke inductor. This proposed PA configuration is validated by simulation results with the PAE improved by 3 % at the 1 dB compression point compared to the topology without tuning capacitor. The experimental results demonstrate a PA which delivers an output power of 21.3 dBm with PAE of 21 % at the 1 dB compression point. The Doherty amplifier with 2-way Wilkinson power splitter is integrated in a 0.9 mm×1.8 mm chip. The main and peak amplifier adopt cascode configuration to improve the stability of the Doherty amplifier. To minimize the chip size, the quarter wave transmission line in the topology is replaced by π-type lumped element equivalent network. To increase the operating bandwidth, the Doherty amplifier configuration using a 3-stage polyphase filter as power splitter is proposed. The topology consists of 3-stage RC polyphase filter, drive amplifiers, main amplifier, peak amplifier, and impedance inverter. By employing the polyphase filter, the quarter-wave transmission line at the input of the peak amplifier for compensating the phase shift of the impedance inverter is eliminated. According to the analysis of the polyphase filter prototype, the 3-stage polyphase filter is selected, and the component parameters are determined. The main amplifier and peak amplifier are using differential cascode configuration. The drive amplifier is to increase the power gain and provide proper impedance matching for the Doherty amplifier. The results demonstrate an outstanding broadband Doherty amplifier with a bandwidth of 1.8 GHz. The chip temperature rises dramatically due to the high power consumption of power amplifier. Consequently, the collector currents of the SiGe transistors are varying with the changing temperature, which deteriorates the PA performance. In the improved 3-stage PPF Doherty design, the bias voltages of the transistors in the first version 3-stage PPF Doherty amplifier are replaced by reference currents feeding through bias circuits. With current sources providing bias current to the transistors, the performance of the improved Doherty amplifier is enhanced. The power combining PAs are constructed on FR-4 PCB boards using discrete components. The single ended power amplifier in the power combining PA is built with high linearity HEMT transistor. The balun combining PA has an advantage of second harmonic cancellation, which is validated by both analysis and measurements. Moreover, power combining PAs with 2-way transmission line and lumped element Wilkinson power divider are designed. The transmission lines in these designs are analyzed using EM simulation tool and verified with testing structures on PCB boards.

Silicon photonics (SiP) has become a cornerstone technology of the modern age by leveraging the mature fabrication processes and infrastructure of the microelectronics industry for the cost-effective and high-volume production of compact and power-efficient photonic integrated circuits (PICs). The impact that silicon (Si)-based PICs have had on data communications, particularly data center interconnection and optical transceiver technologies, has encouraged SiP chip development and their use in other applications such as artificial intelligence, biomedical sensing and engineering, displays for augmented/virtual reality, free-space communications, light detection and ranging, medical diagnostics, optical spectroscopy, and quantum computing and optics. To expand the functionality and improve the performance of SiP circuits for these surging applications, subwavelength grating (SWG) metamaterials have been thoroughly investigated and implemented in various passive integrated photonic components fabricated on the silicon-on-insulator (SOI) platform. SWG metamaterials are periodic structures composed of two materials with different permittivities that exhibit unnatural properties by using a period shorter than the guided wavelength of light propagating through them. The ability to synthesize the constituent SiP materials without any need to alter standard fabrication procedures enables precise, flexible control over the electromagnetic field and sophisticated selectively over anisotropy, dispersion, polarization, and the mode effective index in these metastructures. This provides significant benefits to SOI devices, such as low loss mode conversion and propagation, greater coupling efficiencies and alignment tolerances for fiber-chip interfaces, ultrabroadband operation in on-chip couplers, and improved sensitivities and limits of detection in integrated photonic sensors. Parallel to the rise of SiP technology is the development of other materials compatible with mature PIC fabrication methods both in the foundry (e.g., silicon nitride (Si3N4)) and outside the foundry (e.g., high-index oxide glasses such as aluminum oxide (Al2O3) and tellurium oxide (TeO2)). Si3N4 offsets the pitfalls of Si as a passive waveguiding material, providing lower scattering and polarization-dependent losses, optical transparency throughout the visible spectrum, increased tolerance to fabrication error, and better handling of high-power optical signals. Meanwhile, Al2O3 and TeO2 both serve as excellent host materials for rare-earth ions, and TeO2 possesses strong nonlinear optical properties. Using a single-step post-fabrication thin film deposition process, these materials can be monolithically integrated onto Si PICs at a wafer scale, enabling the realization of complementary-metal-oxide-semiconductor (CMOS)-compatible, hybrid SiP devices for linear, nonlinear, and active functionalities in integrated optics. While SWG metamaterials have widely impacted the design space and applicability of integrated photonic devices in SOI, they have not yet made their mark in other material systems outside of Si. Furthermore, demonstrations of their capabilities in active processes, including optical amplification, are still missing. In this thesis, we present a process for developing various SWG metamaterial-engineered integrated photonic devices in different material systems both within and beyond SOI. The demonstrations in this thesis emphasize the benefits of SWG metamaterials in these devices and realize their potential for enhancing functionality in applications such as sensing and optical amplification. The objective of the thesis is to highlight the prospects of SWG metamaterial implementation in different media used in integrated optics. This is accomplished by experimentally demonstrating SWG metamaterial waveguides, ring resonators and other components composed of different hybrid core-cladding material systems, including Si-TeO2 and Si3N4-Al2O3. Chapter 1 introduces the background and motivation for integrated optics and SWG metamaterials and provides an overview and comparison of the different materials explored in this work. Chapter 2 presents an initial experimental demonstration of TeO2-coated SOI SWG metamaterial waveguides and mode converters. It also details the design of fishbone-style SWG waveguides aimed at lowering loss and enhancing mode overlap with the active TeO2 cladding material in the hybrid SiP platform. Chapter 3 details an open-access Canadian foundry process for rapid prototyping of Si3N4 PICs, emphasizing the Si3N4 material and waveguide fabrication methods, as well as the design and characterization of various integrated photonic components included in a process design kit. The platform is compared against other Si3N4 foundries, and plans for further development are also discussed. Chapter 4 reports the first demonstration of SWG metamaterial waveguides and ring resonators fabricated using a Si3N4 foundry platform. The measured devices have a propagation loss of ∼1.5 dB/cm, an internal quality factor of 2.11·10^5, and a bulk sensitivity of ∼285 nm/RIU in the C-band, showcasing competitive metrics with conventional Si3N4 waveguides and SWG ring resonators and sensors reported in SOI. Chapter 5 presents work towards an SWG metamaterial-engineered waveguide amplifier. The fabricated device, based in Si3N4 and functionalized by an atomic layer deposited, erbium-doped Al2O3 thin film cladding, exhibited a signal enhancement of ∼8.6 dB, highlighting its potential for on-chip optical amplification. Methods to reduce the loss within the material system are proposed to achieve net gain in future devices. Chapter 6 summarizes the thesis and discusses pathways for optimizing the current devices as well as avenues for exploring new and intriguing materials and devices for future applications in integrated photonics. / Thesis / Doctor of Philosophy (PhD)

Doctor of Philosophy / Department of Physics / Hongxing Jiang / III-nitride photonic devices such as photodetectors (PDs), light emitting diode (LEDs), solar cells and optical waveguide amplifiers were designed, fabricated and characterized. High quality AlN epilayers were grown on sapphire and n-SiC substrates by metal organic chemical vapor deposition and utilized as active DUV photonic materials for the demonstration of metal-semiconductor-metal (MSM) detectors, Schottky barrier detectors, and avalanche photodetectors (APDs). AlN DUV PDs exhibited peak responsivity at 200 nm with a very sharp cutoff wavelength at 207 nm and extremely low dark current (<10 fA), very high breakdown voltages, high responsivity, and more than four orders of DUV to UV/visible rejection ratio. AlN Schottky PDs grown on n-SiC substrates exhibited high zero bias responsivity and a thermal energy limited detectivity of about 1.0 x 1015 cm Hz1/2 W-1. The linear mode operation of AlN APDs with the shortest cutoff wavelength (210 nm) and a photocurrent multiplication of 1200 was demonstrated. A linear relationship between device size and breakdown field was observed for AlN APDs. Photovoltaic operation of InGaN solar cells in wavelengths longer than that of previous attainments was demonstrated by utilizing InxGa1−xN/GaN MQWs as the active layer. InxGa1-xN/GaN MQWs solar cells with x =0.3 exhibited open circuit voltage of about 2 V, a fill factor of about 60% and external quantum efficiency of 40% at 420 nm and 10% at 450 nm. The performance of InxGa1-xN/GaN MQWs solar cell was found to be highly correlated with the crystalline quality of the InxGa1-xN active layer. The possible causes of poorer PV characteristics for higher In content in InGaN active layer were explained. Photoluminescence excitation studies of GaN:Er and In0.06Ga0.94N:Er epilayers showed that Er emission intensity at 1.54 µm increases significantly as the excitation energy is tuned from below to above the energy bandgap of these epilayers. Current-injected 1.54 µm LEDs based on heterogeneous integration of Er-doped III-nitride epilayers with III-nitride UV LEDs were demonstrated. Optical waveguide amplifiers based on AlGaN/GaN:Er/AlGaN heterostructures was designed, fabricated, and characterized. The measured optical loss of the devices was ~3.5 cm−1 at 1.54 µm. A relative signal enhancement of about 8 dB/cm under the excitation of a broadband 365 nm nitride LED was achieved. The advantages and possible applications of 1.54 µm emitters and optical amplifiers based on Er doped III-nitrides in optical communications have been discussed.

International Telemetering Conference Proceedings / October 18-21, 2004 / Town & Country Resort, San Diego, California / M/A-COM, Inc. has developed a miniature Tactical Telemetry Module (TTM) for medium power (500 mW and 1 W) telemetry applications. The TTM demonstrates system integration of a multi-channel PCM encoder, lower S-band transmitter, and power regulation onto a single printed wiring board (PWB). The module is smaller than a standard business card and utilizes both COTS and M/A-COM proprietary technologies. The PCM encoder is designed for eight (8) analog inputs, eight (8) discrete inputs, and one (1) synchronous RS-422 serial interface. Data rates of 300 kbps to 6 Mbps are supported. The module incorporates a frequency programmable, phase-locked FM S-band transmitter. The transmitter utilizes M/A-COM’s new dual port VCO and high efficiency 500 mW and 1 W power amplifier MMIC’s. Additionally, switching power regulation circuits were implemented within the module to provide maximum operating efficiency. This paper reviews the design and manufacturing of the Tactical Telemetry Module (TTM) and its major components, and presents system performance data.

ITC/USA 2008 Conference Proceedings / The Forty-Fourth Annual International Telemetering Conference and Technical Exhibition / October 27-30, 2008 / Town and Country Resort & Convention Center, San Diego, California / A study of the effects of interference caused by adjacent channels on the performance of turbo-coded 16- and 32-APSK. Included in our discussion is the spectral regrowth in the nonlinear power amplifier when driven by a non-constant envelope modulation. Ultimately, we present a set of channel spacing guidelines when using turbo-coded APSK for aeronautical telemetry.

International Telemetering Conference Proceedings / October 25-28, 1999 / Riviera Hotel and Convention Center, Las Vegas, Nevada / This paper describes the design considerations used by Aydin Telemetry in the development of its high data rate Feher Patented Quadrature Phase Shift Keying (FQPSK) [1] frequency agile transmitter. We will address several key areas of interest to the Telemetry community, such as the use of commercially available VLSI parts to minimize parts count while maximizing reliability, adaptive filtering to accommodate a wide range of data rates, and user selectable features to achieve a universal transmitter design. User selectable features include differential encoder, 15 stage IRIG randomizer, and 1/2 rate convolutional FEC coding. This paper also addresses the spectral efficiency that can be achieved using a Class-C amplifier with FQPSK and the measured bit error rate (BER) performance versus Eb/No.