<p>This report has been written at SAAB Bofors Dynamics (SBD) AB in Gothenburg at the department of optronic systems.</p><p>In military observation operations, a target to hit is chosen by illumination of a laser designator. From the targetpoint laser radiation is reflected on a detector that helps identify the target. The detector is a semiconductor PIN-type that has been investigated in a laboratory environment together with a specially designed laser source. The detector is a photodiode and using purchased components, circuits for both the photodiode and the laserdiode has been designed and fabricated. The bandwidth of the op-amp should be about 30 MHz, in the experiments a bandwidth of 42 MHz was used. Initially the feedback network, which consists of a 5.6 pF capacitor in parallel with a 1-kohm resistor determined the bandwidth. To avoid the op-amp saturate under strong illuminated laser radiation the feedback network will use a 56-pF capacitor and a 100-ohm resistor respectively.</p><p>The laser should be pulsed with 10-20 ns width, 10 Hz repetition frequency, about 800 nm wavelength and a maximum output power of 80 mW. To avoid electrical reflection signals at measurement equipment connections, the laser circuit includes a resistor of about 50 ohm, that together with the resistance in the laserdiode forms the right termination that eliminate the reflection signals. The wire-wound type of resistor shall be avoided in this application and instead a surface mounted type was beneficial with much lower inductance. The detector showed a linear behaviour up to 40-mW optical power. Further investigation was hindered by the breakdown of the laserdiodes. The function generator limits the tests to achieve 80 mW in light power. In different experiments the responsivity of the photodiode is different from the nominal value, however it would have required more time to investigate the causes.</p>

<p>The geometry of CMOS processes has decreased in a steady pace over the years at the same time as the complexity has increased. Even if there are more requirements on the designer today, the main goal is still the same: to minimize the occupied area and power dissipation. This thesis investigates if a prediction of the costs in future CMOS processes can be made. By implementing several processes on a test circuit we can see a pattern in area and power dissipation when we change to smaller processes.</p><p>This is done by optimizing a two-stage operational transconductance amplifier on basis of a given specification. A circuit optimization tool evaluates the performance measures and costs. The optimization results from the area and power dissipation is used to present a diagram that shows the decreasing costs with smaller processes and also a prediction of how small the costs will be for future processes. This thesis also presents different optimization tools and a design hexagon that can be used when we struggle with optimization trade-offs.</p>

<p>The work describes the development of a reliable device for profiling anion beam in the intensity cross section. A sensor head consisting of a Faradaycup in combination with a Channel Electron Multiplier was designedand built together with electronics including power supply and front endelectronics. The design was chosen considering financial and long term lifeaspects. Testing, first calibration and error analysis were done using the ionbeam facilities where the unit is supposed to be installed permanently. Theprofiling system performed as designed and the profile of the ion beam couldbe measured reliably with an accuracy down to the femto ampere range.</p>

<p>Power-amplifier efficiency is a significant issue for the overall efficiency of most wireless system. Therefore, currently there are different kind of Switched mode power amplifiers are developed which are showing very high efficiency also at higher frequencies but all of these amplifiers are subjected to drive with the constant envelope signals. Whereas, for the increasing demand of high data rate transmissions in wireless communication there are some new modulation schemes are introduced and which are generating no more a constant envelope signal but a high peak to average power signal. Therefore, recently a new technique is proposed called the burst mode operation for operating the switched mode power amplifiers efficiently while driven by a high peak to average power signal.</p><p> </p><p>The purpose of this master thesis work was to review the theory of this burst mode operation and some basic investigations of this theory on switched mode power amplifiers were performed in simulation environments. The amplifiers of class D, inverse D, DE and J are studied. The thesis work was mainly carried out by ADS and partly in MATLAB SIMULINK environment. Since this burst mode operation is a completely new technique therefore a new Harmonic balance simulation setups in ADS and Microwave Office are developed to generate the RF burst signals.</p><p> </p><p>A Class J amplifier based on LDMOS technique is measured by a 16 carrier multi-tone signal having peak to average power ratio of 7 dB and achieved the drain efficiency of 50% with -30 dBc linearity at 946 MHz.</p><p> </p><p> </p>

Active magnetic bearings (AMBs) have become a key technology in industrial applications with a continued drive for cost reduction and an increase in reliability. AMBs require position feedback to suspend the rotor. Conventional contactless position sensors are used to measure the rotor's position. The major disadvantages of conventional position sensors are their cost and that the sensors are viewed as a weak point in an AMB system. A self-sensing sensor is a type of sensor which is cost effective, reduces sensor wire-length and increases reliability, thus ideal for the industry. This type of sensor relies on the current and voltage signals of the AMB's to obtain the rotor position. Due to the rapid and advanced development of digital electronics, it has become more powerful and cheaper, thus self-sensing in mass production will be cost effective. Different self-sensing approaches were developed in the past and can be divided into two main categories: state estimation and amplitude modulation approaches. In this research the focus will be on the amplitude modulation approach. Amplitude modulation makes use of two signals, namely the modulation signal and the carrier signal. In a self-sensing AMB system the carrier can be a high frequency component injected into the system or the switching ripple of the switch mode power amplifier can be used. The modulation signal is the change in rotor position which results in changing inductances. The actuator material introduces nonlinear effects on the estimated position. Due to these nonlinear effects, it is rather difficult to obtain the rotor position. The first industrial application of a self-sensing turbomolecular pump system was implemented in 2005 by S2M. The aim of this thesis is to evaluate existing self-sensing schemes, devise improvements and investigate possible new schemes. Four different demodulation methods and two new self-sensing schemes are evaluated. An AMB transient simulation model which includes saturation, hysteresis, eddy currents and cross-coupling is used to evaluate the schemes in simulation. The self-sensing schemes are implemented in hardware and evaluated on a 7 A rms 500 N AMB. A comparative study was done on the different self-sensing schemes. From the comparative study it was determined that the gain- and phase effects have a direct effect on the sensitivity of the system. It was also proved that self-sensing can be implemented on a coupled AMB with a sensitivity of 10.3 dB. / Thesis (Ph.D. (Electrical and Electronic Engineering))--North-West University, Potchefstroom Campus, 2009.

The Applied Miniaturisation Laboratory (AML) has recently built a laser-induced fluorescent capillary electrophoresis (LIF-CE) genetic analysis instrument, called the Tricorder Tool Kit (TTK). By using a photodiode instead of photomultiplier tubes in the optical detection, the AML has lowered the cost and size compared to commercial LIF-CE products. However, maintaining an adequate signal-to-noise (SNR) and limit of detection (LOD) is a challenge. By implementing a multistage amplifier, we increased the bandwidth and voltage swing while maintaining the transimpedance gain compared to the previous design. We also developed signal processing algorithms for post-experiment processing of CE. Using wavelet transform, iterative polynomial baseline fitting, and Jansson's deconvolution, we improved the SNR, reduced baseline variations, and separated overlapping peaks in CE signals. By improving the electronics and signal processing, we lowered the LOD of the TTK, which is a step towards the realisation of inexpensive point-of-care molecular medical diagnosis instruments. / Computer, Microelectronic Devices, Circuits and Systems

In this thesis, design aspects of fully integrated multibandmultistandard front-end receivers are investigated based onthree fundamental aspects: noise, linearity and operatingfrequency. System level studies were carried out to investigatethe effects of different modulation techniques, duplexing andmultiple access methods on the noise, linearity and selectivityperformance of the circuit. Based on these studies and thelow-cost consideration, zero-IF, low-IF and wideband-IFreceiver architectures are promising architectures. These havea common circuit topology in a direct connection between theLNA and the mixer, which has been explored in this work toimprove the overall RF-to-IF linearity. One front-end circuitapproach is used to achieve a low-cost solution, leading to anew multiband multistandard front-end receiver architecture.This architecture needs a circuit whose performance isadaptable due to different requirements specified in differentstandards, works across several RF-bands and uses a minimumamount ofexternal components. Five new circuit topologies suitable for a front-endreceiver consisting of an LNA and mixer (low-noise converter orLNC) were developed. A dual-loop wide-band feedback techniquewas applied in all circuits investigated in this thesis. Threeof the circuits were implemented in 0.18 mm RF-CMOS and 25 GHzbipolar technologies. Measurement results of the circuitsconfirmed the correctness of the design approach. The circuits were measured in several RF-bands, i.e. in the900 MHz, 1.8 GHz and 2.4 GHz bands, with S11 ranging from–9.2 dB to–17 dB. The circuits have a typicalperformance of 18-20 dB RF-to-IF gain, 3.5-4 dB DSB NF and upto +4.5 dBm IIP3. In addition, the circuit performance can beadjusted by varying the circuit’s first-stage biascurrent. The circuits may work at frequencies higher than 3GHz, as only 1.5 dB of attenuation is found at 3 GHz and nopeaking is noticed. In the CMOS circuit, the extrapolated gainat 5 GHz is about 15 dB which is consistent with the simulationresult. The die-area of each of the circuits is less than 1mm2.

Advanced digital modulation schemes used in the wireless applications, result in the modulated RF signals with high peak to average power ratio which requires linear amplification. On the other hand, the demand for a longer talk time with less battery volume and weight, especially in hand-held radio units, necessitate more power efficient methods to be utilized in power amplifier design. But improved linearity and efficiency have always been contradicting requirements demanding innovative power ampli

The implementation of highly integrated multi-bands and multi-standards reconfigurable radio transceivers is one of the great challenges in the area of integrated circuit technology today. In addition the rapid market growth and high quality demands that require cheaper and smaller solutions, the technical requirements for the transceiver function of a typical wireless device are considerably multi-dimensional. The major key performance metrics facing RFIC designers are power dissipation, speed, noise, linearity, gain, and efficiency. Beside the difficulty of the circuit design due to the trade-offs and correlations that exist between these parameters, the situation becomes more and more challenging when dealing with multi-standard radio systems on a single chip and applications with different requirements on the radio software and hardware aiming at highly flexible dynamic spectrum access. In this dissertation, different solutions are proposed to improve the linearity, reduce the noise and power consumption in analog and RF circuits and systems. A system level design digital approach is proposed to compensate the harmonic distortion components produced by transmitter circuits’ nonlinearities. The approach relies on polyphase multipath scheme uses digital baseband phase rotation pre-distortion aiming at increasing harmonic cancellation and power consumption reduction over other reported techniques. New low power design techniques to enhance the noise and linearity of the receiver front-end LNA are also presented. The two proposed LNAs are fully differential and have a common-gate capacitive cross-coupled topology. The proposed LNAs avoids the use of bulky inductors that leads to area and cost saving. Prototypes are implemented in IBM 90 nm CMOS technology for the two LNAs. The first LNA covers the frequency range of 100 MHz to 1.77 GHz consuming 2.8 mW from a 2 V supply. Measurements show a gain of 23 dB with a 3-dB bandwidth of 1.76 GHz. The minimum NF is 1.85 dB while the input return loss is greater than 10 dB across the entire band. The second LNA covers the frequency range of 100 MHz to 1.6 GHz. A 6 dBm third-order input intercept point, IIP3, is measured at the maximum gain frequency. The core consumes low power of 1.55 mW using a 1.8 V supply. The measured voltage gain is 15.5 dB with a 3-dB bandwidth of 1.6 GHz. The LNA has a minimum NF of 3 dB across the whole band while achieving an input return loss greater than 12 dB. Finally, A CMOS single supply operational transconductance amplifier (OTA) is reported. It has high power supply rejection capabilities over the entire gain bandwidth (GBW). The OTA is fabricated on the AMI 0.5 um CMOS process. Measurements show power supply rejection ratio (PSRR) of 120 dB till 10 KHz. At 10 MHz, PSRR is 40 dB. The high performance PSRR is achieved using a high impedance current source and two noise reduction techniques. The OTA offers a very low current consumption of 25 uA from a 3.3 V supply.

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