Este trabalho mostra a comparação dos efeitos das falhas provocadas pelos Single-Event Effects em dispositivos 28nm FDSOI, 28nm FDSOI High-K e 32nm Bulk CMOS e células de memória 6T SRAM feitas com estes dispositivos. Para conseguir isso, foram usadas ferramentas TCAD para simular falhas transientes devido a impacto de íons pesados a nível dispositivo e nível circuito. As simulações neste ambiente tem como vantagem a simulação dos fatos e mecanismos que produz as falhas transientes e seus efeitos nos dispositivos, além de também servir para projetar virtualmente estes dispositivos e caraterizar eles para estas simulações. Neste caso, foram projetados três dispositivos para simulação: um transistor NMOS de 32nm Bulk, um transistor NMOS de 28nm FDSOI e um transistor NMOS de 28nm FDSOI High-K para fazer comparações entre eles. Estes dispositivos foram projetados, caraterizados e testados contra o impacto de íons pesados a níveis dispositivo e circuito. Como resultado obtido, transistor Bulk de 32nm teve, no pior caso, uma carga coletada de 7.57 e 7.19 vezes maior que a carga coletada pelo dispositivo FDSOI de 28nm e FDSOI High-K de 28nm respectivamente atingido pelo mesmo íon pesado de 100MeV-cm2/mg. Com estes dados foi possível modelar o comportamento da carga coletada de ambos dispositivos usando este íon pesado, atingindo os terminais de Fonte e Dreno em distintos lugares e ângulos. Usando a mesma ferramenta e os dados obtidos de carga coletada pelos testes anteriores, foram projetadas células de memória SRAM de 6 transistores. Isso foi para testar elas contra os efeitos do impacto de íons pesados nos transistores NMOS de armazenagem da dados. Neste caso, a Transferência Linear de Energia (LET) do íon necessária para fazer que o dado armazenado na SRAM Bulk mude é 12.8 vezes maior que no caso da SRAM FDSOI e 10 maior no caso da SRAM FDSOI High-K, embora a quantidade de carga coletada necessária para que o dado mude em ambas células seja quase a mesma. Com estes dados foi possível modelar os efeitos dos íons pesados em ambos circuitos, descobrir a Carga Crítica destes e qual é o mínimo LET necessário para que o dado armazenado nestas SRAMs mude. / This work shows a comparison of faults due to Single-Event Effects in 28nm Fully Depleted SOI (FDSOI), 28nm FDSOI High-K and 32nm Bulk CMOS devices, and in 6T SRAM memory cells made with these devices. To provide this, was used TCAD tools to simulate transient faults due to heavy ion impacts on device and circuit levels. The simulations in that environment have the advantage to simulate the facts and mechanisms which produce the transient faults and this effects on the electronic devices, it also allow to simulate the virtual device fabrication and to characterize them. In this case, two devices were created for the simulations: a 32nm Bulk NMOS transistor and a 28nm FDSOI NMOS transistor for compare them. These devices were created, characterized and tested against heavy ion impacts at device and circuit levels. The results show that 32nm Bulk transistor has, in the worst case, a collected charge 7.57 and 7.19 times greater than the 28nm FDSOI and 28nm FDSOI High-K respectively collected charge with the same 100MeV-cm2/mg heavy ion. With these data it was possible to model the behavior of the collected charge in both devices with the same heavy-ion, reach the Source and Drain Terminal in different places and angles. Using the same tools and the obtained collected charge data of previous simulations, it was designed 6 transistors SRAM Memory Cells. That is done to test these circuits against the heavy ion effects on the data-storage NMOS transistor. In this case, the necessary Ion Linear Energy Transfer (LET) to flip the Bulk SRAM is 12.8 greater than the FDSOI SRAM and 10 times greater than the FDSOI High- K SRAM case, although the amount of charge to flip the cells is almost the same in both cases. With these data it was possible to model the heavy-ion effects in both circuits, discover the Critical Charge of them and the minimum LET to flips these SRAMs.

Cette thèse présente des développements de méthodes applicables au traitement théorique de réseaux de spins périodiques. Une méthode (Self-Consistent Perturbation), est inspirée par une expansion perturbative de la fonction d'onde à partir d'une fonction de référence très localisée. Cette variante d'un formalisme Coupled Cluster conduit à des équations polynomiales couplées, aisément résolues. Les autres méthodes sont basées sur des changements d'échelle, dans l'esprit du Groupe de Renormalisation dans l'Espace Réel, le réseau étant vu comme des blocs en interaction. La théorie des Hamiltoniens effectifs, utilisant le spectre exact de dimères ou trimères de blocs, permet de définir des interactions effectives. On a considéré soit des blocs à nombre impair de sites, qu'on peut voir comme des quasi-spins, ce qui est susceptible de produire des réseaux isomorphes et permet, d'itérer le processus et de garder l'élégance et les concepts du formalisme du Groupe de Renormalisation, soit des blocs à nombre pair de sites, qui conduisent à une description excitonique renormalisée des états excités. Les méthodes ont été testées sur des réseaux simples, puis appliquées à la recherche de transitions de phase sur une série de réseaux bidimensionnels (carré anisotrope, 1/5-depleted, plaquette, Shastry-Sutherland) et à des rubans graphitiques. Les localisations des transitions de phase (et les valeurs des gaps) sont prédites de façon très cohérentes par les diverses méthodes utilisées et en bon accord avec les meilleurs évaluations disponibles. L'hypothèse de l'existence d'une phase intermédiaire dans le réseau Shastry-Sutherland est confortée par nos calculs.

The use of banned toxic weapons in Iraq during Gulf War 1991 started new debates. The increase in cancer cases was the main focus of these issues. The gap in literature motivated this study to find out the correlation between use of DU weapons and its effects on human health. The different probable causes of increase in cancer cases, in Iraq after Gulf War 1991, have been discussed in this study. Three causes; DU, brick kilns smoke near Basra and Kuwait oil fire smoke have been selected. The major emphasis of this study is on use of Depleted Uranium (DU). Different statistical data sets have been used and displayed in the form of maps and graphs using GIS methodologies. It’s hard to say after this GIS based study that the fired Depleted Uranium is the sole cause of increase in cancer incidences in Iraq, while some trends and risk factors at least can be observed where increase in cancer cases in different Governorates in Iraq is clearly visible after Gulf War 1991. After analyzing satellite images of different dates, the second part of this study concludes that Kuwait oil wells smoke is not responsible for increase in cancer incidences in Iraq. A small debate has been initiated regarding smoke in brick kilns near Basra. No study has been found in this regard which can provide evidences that brick kilns smoke is the cause of increase in cancer incidences in southern Iraq. It’s not easy to carry out a full fledge GIS based study to prove DU as cause of increase in cancer cases. The main limitation in this regard is unavailability of required data. Therefore a new GIS based methodology has been devised which can be used to prove relationship between exposure to DU and increase in cancer cases in Iraq. This new methodology is also dependent on specific data sets. Hence this methodology also recommends the collection of specific data sets required for this study. At the end, a detailed study, with honesty, has been suggested to fill up the gaps found in literature whether use of Depleted Uranium in weapons is harmful for human health or not.

Pour compléter leur cycle de vie, les virus interagissent avec de nombreux facteurs de la cellule-hôte. Le virus Herpès simplex de type 1 (HSV-1) ne fait pas exception. Une récente étude protéomique du virus effectuée par notre laboratoire a permis d’identifier 49protéines cellulaires potentiellement incorporées dans les virions matures d’HSV-1 [1]. Étant donné que certaines de ces protéines peuvent jouer des rôles importants au cours du cycle de vie du virus, elles constituent des cibles de choix pour identifier et caractériser de nouvelles interactions hôte-pathogène dans le contexte d’HSV-1. D’ailleurs le laboratoire a été effectué un criblage aux petits ARN d’interférence qui a démontré qu'au moins 15 des protéines incorporées sont impliqués dans le cycle de réplication de HSV-1 en culture cellulaire (Annexe 1). Des nombreuses études rapportent l'incorporation des protéines de l'hôte dans les virions matures mais très peu abordent l'importance de la fraction des protéines cellulaires incorporée dans les virions pour le cycle virale. Pour vérifier ça, nous avons déplété ces protéines des virions matures extracellulaires en utilisant des petits ARN d’interférence. Par la suite, nous avons utilisé ces virus déplétés pour réinfecter des cellules déplétées ou normales. Cette méthode nous a permis d'identifier pour la première fois 8 protéines (DDX3X, HSPA8, KRT10, MIF, Rab5A, Rab6A, Rab10 et 14-3-3ζ) dont l'absence dans les virions réduit la production virale d'au moins 50%. Pour mieux comprendre à quelle étape du cycle viral ces protéines sont nécessaires, nous avons aussi quantifié les virus intracellulaires, produits des cellules déplétées individuellement des quinze protéines cellulaires. Ainsi, nous avons trouvé que dans nos conditions 7 de ces 8 protéines cellulaires (DDX3X, HSPA8, KRT10, MIF, Rab5A, Rab6A et Rab10) semblent impliquées dans la production des virus intracellulaires, ce qui nous a stimulés à débuter une série de tests plus approfondis de l’entrée d’HSV-1. Les résultats préliminaires, démontrent l’implication dans l’entrée d’HSV-1 d’au moins 3 à 4 de ces protéines (HSPA8, KRT10, Rab5A et Rab10). / To complete their life cycle viruses interact with many factors of the host cell. Herpes simplex virus type 1 (HSV-1) is no exception. A recent proteomic study of the virus carried by our laboratory has identified up to 49 cellular proteins potentially incorporated into the mature virions of HSV-1[1]. Since some of these proteins may play important roles during the viral life cycle, they are interesting targets for identification and characterization of new host-pathogen interactions in the context of HSV-1. To target the proteins that are relevant to the viral life cycle of Herpes, the laboratory performed a screening with small interfering RNAs (siRNAs), which showed that at least 15 incorporated proteins are involved in the replication cycle of HSV- 1 in cell culture (Appendix 1). Numerous studies report the incorporation of host proteins in mature virions but few addresses the importance for the viral infectivity of the fractions of cellular proteins incorporated into the virions. To verify this, we depleted these proteins from the mature extracellular virions using siRNAs. Subsequently, we used these viruses to re-infect depleted or normal cells. This method allowed us to identify for the first time eight proteins (DDX3X, HSPA8, KRT10, MIF, Rab5A, Rab6A, Rab10 and 14-3-3ζ) whose absence in virions reduced viral production by at least 50%. As part of understanding at what stage of the life cycle these proteins are necessary for HSV-1, we tested the infectivity of intracellular depleted viruses. Thus, we found at least seven cellular proteins (DDX3X, HSPA8, KRT10, MIF, Rab5A, Rab6A and Rab10) to have a pronounced effect on the replication of herpes virus, which has stimulated us to begin a series of more in-depth tests of the entry of HSV-1. Preliminary results demonstrate the involvement in the entry of HSV-1 of at least three to four proteins (HSPA8, KRT10, Rab5A and Rab10).

Durant les 5 dernières décennies, les technologies CMOS se sont imposées comme méthode de fabrication principale pour les circuits semi-conducteurs intégrés avec notamment le transistor MOSFET. Néanmoins, la miniaturisation de ces transistors en technologie CMOS sur substrat massif atteint ses limites et a donc été arrêtée. Les filières FDSOI apparaissent comme une excellente alternative permettant une faible consommation et une excellente maîtrise des effets électrostatiques dans les transistors MOS, même pour les nœuds technologiques 14 et 28 nm. Cependant, la pente sous le seuil (60 mV/décade) du MOSFET ne peut pas être améliorée, ce qui limite la réduction de la tension d’alimentation. Cette restriction a motivé la recherche de composants innovants pouvant offrir des déclenchements abrupts tels que le Z2-FET (Zéro pente sous le seuil et Zéro ionisation par impact), Z2-FET DGP (avec double Ground Plane) et Z3-FET (Zéro grille avant). Grace à leurs caractéristiques intéressantes (déclenchement abrupte, faible courant de fuite, tension de déclenchement ajustable, rapport de courant ION/IOFF élevé), les dispositifs à modulation de bandes peuvent être utilisés dans différentes applications. Dans ce travail, nous nous sommes concentrés sur la protection contre les décharges électrostatiques (ESD), la mémoire DRAM embarquée sans capacité de stockage, et les interrupteurs logiques. L’étude des mécanismes statique et transitoire ainsi que des performances de ces composants a été réalisée grâce à des simulations TCAD détaillées, validées systématiquement par des résultats expérimentaux. Un modèle de potentiel de surface pour les trois dispositifs est également fourni. / During the past 5 decades, Complementary Metal Oxide Semiconductor (CMOS) technology was the dominant fabrication method for semiconductor integrated circuits where Metal Oxide Semiconductor Field Effect Transistor (MOSFET) was and still is the central component. Nonetheless, the continued physical downscaling of these transistors in CMOS bulk technology is suffering limitations and has been stopped nowadays. Fully Depleted Silicon-On-Insulator (FDSOI) technology appears as an excellent alternative that offers low-power consumption and improved electrostatic control for MOS transistors even in very advanced nodes (14 nm and 28 nm). However, the 60 mV/decade subthreshold slope of MOSFET is still unbreakable which limits the supply voltage reduction. This motivated us to explore alternative devices with sharp-switching: Z2-FET (Zero subthreshold slope and Zero impact ionization), Z2-FET DGP (with Dual Ground Planes) and Z3-FET (Zero front-gate). Thanks to their attractive characteristics (sharp switch, low leakage current, adjustable triggering voltage and high current ratio ION/IOFF), band-modulation devices are envisioned for multiple applications. In this work, we focused on Electro-Static Discharge (ESD) protection, capacitor-less Dynamic Random Access Memory and fast logic switch. The DC and transient operation mechanisms as well as the device performance are investigated in details with TCAD simulations and validated with systematic experimental results. A compact model of surface potential distribution for all Z-FET family devices is also given.

Submitted by Ana Maria Fiscina Sampaio (fiscina@bahia.fiocruz.br) on 2015-10-13T12:34:40Z No. of bitstreams: 1 Ana Isabel Reis Nascimento. Participação...2015.pdf: 1631129 bytes, checksum: d14aa063c882bb96ee29f85751abf2e6 (MD5) / Approved for entry into archive by Ana Maria Fiscina Sampaio (fiscina@bahia.fiocruz.br) on 2015-10-13T12:34:59Z (GMT) No. of bitstreams: 1 Ana Isabel Reis Nascimento. Participação...2015.pdf: 1631129 bytes, checksum: d14aa063c882bb96ee29f85751abf2e6 (MD5) / Made available in DSpace on 2015-10-13T12:34:59Z (GMT). No. of bitstreams: 1 Ana Isabel Reis Nascimento. Participação...2015.pdf: 1631129 bytes, checksum: d14aa063c882bb96ee29f85751abf2e6 (MD5) Previous issue date: 2015 / Fundação Oswaldo Cruz. Centro de Pesquisas Gonçalo Moniz. Salvador, BA, Brasil / Alguns estudos sugerem que as vias opioidérgicas centrais parecem desempenhar um papel regulatório no controle da ingestão de água e sal em mamíferos. As ações dos opioides centrais sobre a regulação do controle hidroeletrolítico são mediadas por vários dos subtipos de receptores opioides. O papel dos receptores delta e kappa-opioides centrais neste processo não está adequadamente elucidado sendo necessário mais estudos que o esclareçam. Objetivo: Este estudo investigou o envolvimento dos receptores delta e kappa-opioides centrais no apetite por sódio em ratos depletados deste íon e em rato ativados centralmente com angiotensina. Material e Métodos: Foram utilizados ratos Wistar (270 ± 20 g), submetidos à cirurgia estereotáxica para implante de cânula guia no ventrículo lateral esquerdo (VL), no órgão subfornical (OSF), no núcleo preóptico mediano (MnPO) e no núcleo basolateral da amígdala (BLA). No protocolo de depleção de sódio os animais foram submetidos à injeção subcutânea de furosemida combinada com dieta hipossódica quatro dias após a cirurgia. Neste modelo de estudo os animais receberam injeção intracerebroventricular (i.c.v.) do antagonista delta-opioide naltrindole no quinto dia pós-cirúrgico, nas doses de 5, 10 e 20 nmol/2 μL e do antagonista kappa-opioide, norbinaltorfimina, injetado no OSF, MnPO e BLA, nas doses de 0,5, 1,0 e 2,0 nmol/0,2 μL.. O agonista específico para os receptores delta-opioides, deltorfina II (2,5, 5,0, 10 e 20 nmol/2 μL), foi injetado i.c.v. em animais depletados de sódio pré-tratados com naltrindole na dose de 20 nmol/2 μL e em animais repletos de sódio na dose de 20 nmol/2 μL. O agonista kappa-opioide, ICI199,441 (2,0 nmol/0,2 μL) foi injetado no OSF, MnPO e BLA em animais depletados de sódio pré-tratados com norbinaltorfimina 2,0 nmol/0,2 μL e em animais repletos de sódio na dose de 2,0 nmol/0,2 μL. Bebedouros de água destilada (H2Od) e de salina foram introduzidos nas caixas15 minutos após a injeção central e tiveram seus volumes monitorados nos tempos 5, 10, 15, 30, 45, 60, 90 e 120 minutos, após a colocação dos bebedouros. No protocolo de ativação angiotensinérgica central, quarto dia após a cirurgia os animais sofreram administração i.c.v. de naltrindole (5, 10 e 20 nmol/2 μL) 15 minutos antes de receberem injeções de angiotensina II na dose de 10 ng/2 μL. Os bebedouros de H2Od e de solução salina foram introduzidos nas caixas logo após a segunda injeção e tiveram seus volumes monitorados nos tempos 5, 10, 15, 30, 45, 60, 90 e 120 minutos, após a colocação dos bebedouros. Para verificar a especificidade de ação dos antagonistas opioides os animais foram submetidos aos testes de sobremesa, campo aberto e medida da pressão arterial. A análise estatística utilizada foi ANOVA modelo misto para medidas repetidas seguida do pós-teste de Bonferroni para múltiplas comparações dos volumes ingeridos e teste “t” de Student não pareado para análise dos testes de comportamento, através do programa GraphPad Prism 6.0. Resultados: Os grupos de ratos que receberam injeções i.c.v. de naltrindole após depleção de sódio e ativação angiotensinérgica central, apresentaram redução estatisticamente significante na ingestão de salina quando comparados ao grupo de animais controles. Os ratos que receberam injeção de norbinaltorfimina no OSF, MnPO e BLA após depleção de sódio apresentaram redução estatisticamente significante na ingestão de salina quando comparados ao grupo de animais controles. A estimulação dos receptores delta-opioides em animais repletos de sódio aumentou a ingestão de salina hipertônica. Conclusões: Os dados presentes sugerem que os receptores delta-opioides centrais e os receptores kappa-opioides localizados no OSF, MnPO e BLA parecem desempenhar papel fundamental na expressão do comportamento de aquisição de sal em ratos que sofreram depleção de sódio e ativação central do apetite por sódio induzido pela via angiotensinérgica. / Central opioid pathways seem to have an important role on the control of water and salt intake in mammals, and brain opioid peptides may influence hydroelectrolyte balance through a myriad of actions mediated by distinct opioid receptors. The specific role of central delta and kappa-opioid receptors (DOR and KOR) in this process is far from being fully understood. In the present work, we investigated the role of those receptors in the control of water and salt intake, in sodium-depleted rats and rats with activation central angiotensinergic. Method: Wistar male rats (250 ± 20 g) were used in the experiment after stereotaxic cannulation of the VL left, SFO, MnPO and BLA. To study the effect of the blockade of central DOR and KOR on water and salt intake in rats were sodium depleted by the concomitant use of s.c. injections of furosemide and were kept in hypossodic diet, five days after surgery. In the sixth day, they received i.c.v. injections of a selective delta-opioid receptor antagonist (naltrindole) at the doses of 5, 10 and 20 nmol/2 μL and injections in the SFO, MnPO and BLA of a selective kappa-opioid receptor antagonist (norbinaltorphimine) at the doses of 0.5, 1.0 and 2.0 nmol/0.2 μL. The specific agonist for delta-opioid receptor deltorphin II (2.5, 5.0, 10 and 20 nmol / 2 !L) was injected i.c.v. in animals depleted pretreated with sodium naltrindole at the dose 20 nmol /2 !L . The kappa-opioid agonist, ICI199,441 (2 nmol /0.2 !L) was injected into the SFO, MnPO and BLA in animals depleted pretreated with sodium norbinaltorphimine 2.0 nmol / 0.2 !L. Bottles containing water or hypertonic saline solution were introduced into the cages 15 min after the central administration. To study the effect of the blockade of central DOR and KOR on water and salt intake in animals after central angiotensinergic stimulation, the animals received intracerebroventricular injections of naltrindole at the doses of 5, 10 and 20 nmol/2 μL 30 min before receiving central injections of angiotensin II at the dose of 10 ng/2 μL. In this case, bottles containing water or hypertonic saline solution were introduced into the cages immediately after the central administration of angiotensin II. Water and salt intake were recorded for the next 2 hours after the introduction of the bottles into the cages. To verify the specificity of action of opioid antagonists animals were submitted to the dessert test, open field and measurement of blood pressure. Data were analyzed by Two-Way ANOVA mixed model followed by Bonferroni as post-hoc test. Results: The groups of rats that received i.c.v. injections naltrindole after sodium depletion and central angiotensinergic activation, showed a statistically significant reduction in salt intake when compared to control animals group. Rats receiving norbialtorphimine injection in the SFO, MnPO and BLA after sodium depletion showed a statistically significant reduction in salt intake when compared to control animals group. The stimulation of delta-opioid receptors in animals full of sodium increased intake of hypertonic saline. Conclusions: The present data suggest that the delta-opioid receptors central, and the kappa-opioid receptors located in the SFO, MnPO and BLA appear to play a key role in the expression of the salt acquisition behavior in rats with sodium appetite.

Este trabalho mostra a comparação dos efeitos das falhas provocadas pelos Single-Event Effects em dispositivos 28nm FDSOI, 28nm FDSOI High-K e 32nm Bulk CMOS e células de memória 6T SRAM feitas com estes dispositivos. Para conseguir isso, foram usadas ferramentas TCAD para simular falhas transientes devido a impacto de íons pesados a nível dispositivo e nível circuito. As simulações neste ambiente tem como vantagem a simulação dos fatos e mecanismos que produz as falhas transientes e seus efeitos nos dispositivos, além de também servir para projetar virtualmente estes dispositivos e caraterizar eles para estas simulações. Neste caso, foram projetados três dispositivos para simulação: um transistor NMOS de 32nm Bulk, um transistor NMOS de 28nm FDSOI e um transistor NMOS de 28nm FDSOI High-K para fazer comparações entre eles. Estes dispositivos foram projetados, caraterizados e testados contra o impacto de íons pesados a níveis dispositivo e circuito. Como resultado obtido, transistor Bulk de 32nm teve, no pior caso, uma carga coletada de 7.57 e 7.19 vezes maior que a carga coletada pelo dispositivo FDSOI de 28nm e FDSOI High-K de 28nm respectivamente atingido pelo mesmo íon pesado de 100MeV-cm2/mg. Com estes dados foi possível modelar o comportamento da carga coletada de ambos dispositivos usando este íon pesado, atingindo os terminais de Fonte e Dreno em distintos lugares e ângulos. Usando a mesma ferramenta e os dados obtidos de carga coletada pelos testes anteriores, foram projetadas células de memória SRAM de 6 transistores. Isso foi para testar elas contra os efeitos do impacto de íons pesados nos transistores NMOS de armazenagem da dados. Neste caso, a Transferência Linear de Energia (LET) do íon necessária para fazer que o dado armazenado na SRAM Bulk mude é 12.8 vezes maior que no caso da SRAM FDSOI e 10 maior no caso da SRAM FDSOI High-K, embora a quantidade de carga coletada necessária para que o dado mude em ambas células seja quase a mesma. Com estes dados foi possível modelar os efeitos dos íons pesados em ambos circuitos, descobrir a Carga Crítica destes e qual é o mínimo LET necessário para que o dado armazenado nestas SRAMs mude. / This work shows a comparison of faults due to Single-Event Effects in 28nm Fully Depleted SOI (FDSOI), 28nm FDSOI High-K and 32nm Bulk CMOS devices, and in 6T SRAM memory cells made with these devices. To provide this, was used TCAD tools to simulate transient faults due to heavy ion impacts on device and circuit levels. The simulations in that environment have the advantage to simulate the facts and mechanisms which produce the transient faults and this effects on the electronic devices, it also allow to simulate the virtual device fabrication and to characterize them. In this case, two devices were created for the simulations: a 32nm Bulk NMOS transistor and a 28nm FDSOI NMOS transistor for compare them. These devices were created, characterized and tested against heavy ion impacts at device and circuit levels. The results show that 32nm Bulk transistor has, in the worst case, a collected charge 7.57 and 7.19 times greater than the 28nm FDSOI and 28nm FDSOI High-K respectively collected charge with the same 100MeV-cm2/mg heavy ion. With these data it was possible to model the behavior of the collected charge in both devices with the same heavy-ion, reach the Source and Drain Terminal in different places and angles. Using the same tools and the obtained collected charge data of previous simulations, it was designed 6 transistors SRAM Memory Cells. That is done to test these circuits against the heavy ion effects on the data-storage NMOS transistor. In this case, the necessary Ion Linear Energy Transfer (LET) to flip the Bulk SRAM is 12.8 greater than the FDSOI SRAM and 10 times greater than the FDSOI High- K SRAM case, although the amount of charge to flip the cells is almost the same in both cases. With these data it was possible to model the heavy-ion effects in both circuits, discover the Critical Charge of them and the minimum LET to flips these SRAMs.

L’activation à basse température est prometteuse pour l’intégration 3D séquentielle où lebudget thermique du transistor supérieur est limité (<650 ºC) pour ne pas dégrader letransistor inférieur, mais aussi dans le cas d’une intégration planaire afin d’atteindre des EOTultra fines et de contrôler le travail de sortie de la grille sans recourir à une intégration de type« gate-last ». Dans ce travail, l’activation par recroissance en phase solide (SPER) a étéétudiée afin de réduire le budget thermique de l’activation des dopants.L’activation à basse température présente plusieurs inconvénients. Les travauxprécédents montrent que les fuites de jonctions sont plus importantes dans ces dispositifs.Ensuite, des fortes désactivations de dopants ont été observées. Troisièmement, la faiblediffusion des dopants rend difficile la connexion des jonctions source et drain avec le canal.Dans ce travail, il est montré que dans un transistor FDSOI, l’augmentation des fuites dejonctions et la désactivation du Bore peuvent être évités grâce à la présence de l’oxyde enterré.De plus les conditions d’implantation ont été optimisées et les transistors activés à650 ºC atteignent les performances des transistors de référence. / Low temperature (LT) process is gaining interest in the frame of 3D sequentialintegration where limited thermal budget (<650 ºC) is needed for top FET to preserve bottomFET from any degradation and also in the standard planar integration for achieving ultra-thinEOT and work function control with high-k metal gate without gate-last integration scheme.In this work, LT Solid Phase Epitaxial Regrowth (SPER) has been investigated for reducingthe most critical thermal budget which is dopant activation.From previous works, LT activated devices face several challenges: First, higher junctionleakage limits their application to high performance devices. Secondly, strong deactivation ofthe metastable activated dopants was observed with post anneals. Thirdly, the dopant weakdiffusion makes it difficult to connect the channel with S/D.In this work, it is shown that the use of FDSOI enables to overcome junction leakage andBoron deactivation issues thanks to the defect cutting off and sinking effect of buried oxide.As a consequence, dopant deactivation in FDSOI devices is no longer an issue. Finally,implants conditions of LT transistors have been optimized to reach similar performance thanits standard high temperature counterparts.

Este trabalho mostra a comparação dos efeitos das falhas provocadas pelos Single-Event Effects em dispositivos 28nm FDSOI, 28nm FDSOI High-K e 32nm Bulk CMOS e células de memória 6T SRAM feitas com estes dispositivos. Para conseguir isso, foram usadas ferramentas TCAD para simular falhas transientes devido a impacto de íons pesados a nível dispositivo e nível circuito. As simulações neste ambiente tem como vantagem a simulação dos fatos e mecanismos que produz as falhas transientes e seus efeitos nos dispositivos, além de também servir para projetar virtualmente estes dispositivos e caraterizar eles para estas simulações. Neste caso, foram projetados três dispositivos para simulação: um transistor NMOS de 32nm Bulk, um transistor NMOS de 28nm FDSOI e um transistor NMOS de 28nm FDSOI High-K para fazer comparações entre eles. Estes dispositivos foram projetados, caraterizados e testados contra o impacto de íons pesados a níveis dispositivo e circuito. Como resultado obtido, transistor Bulk de 32nm teve, no pior caso, uma carga coletada de 7.57 e 7.19 vezes maior que a carga coletada pelo dispositivo FDSOI de 28nm e FDSOI High-K de 28nm respectivamente atingido pelo mesmo íon pesado de 100MeV-cm2/mg. Com estes dados foi possível modelar o comportamento da carga coletada de ambos dispositivos usando este íon pesado, atingindo os terminais de Fonte e Dreno em distintos lugares e ângulos. Usando a mesma ferramenta e os dados obtidos de carga coletada pelos testes anteriores, foram projetadas células de memória SRAM de 6 transistores. Isso foi para testar elas contra os efeitos do impacto de íons pesados nos transistores NMOS de armazenagem da dados. Neste caso, a Transferência Linear de Energia (LET) do íon necessária para fazer que o dado armazenado na SRAM Bulk mude é 12.8 vezes maior que no caso da SRAM FDSOI e 10 maior no caso da SRAM FDSOI High-K, embora a quantidade de carga coletada necessária para que o dado mude em ambas células seja quase a mesma. Com estes dados foi possível modelar os efeitos dos íons pesados em ambos circuitos, descobrir a Carga Crítica destes e qual é o mínimo LET necessário para que o dado armazenado nestas SRAMs mude. / This work shows a comparison of faults due to Single-Event Effects in 28nm Fully Depleted SOI (FDSOI), 28nm FDSOI High-K and 32nm Bulk CMOS devices, and in 6T SRAM memory cells made with these devices. To provide this, was used TCAD tools to simulate transient faults due to heavy ion impacts on device and circuit levels. The simulations in that environment have the advantage to simulate the facts and mechanisms which produce the transient faults and this effects on the electronic devices, it also allow to simulate the virtual device fabrication and to characterize them. In this case, two devices were created for the simulations: a 32nm Bulk NMOS transistor and a 28nm FDSOI NMOS transistor for compare them. These devices were created, characterized and tested against heavy ion impacts at device and circuit levels. The results show that 32nm Bulk transistor has, in the worst case, a collected charge 7.57 and 7.19 times greater than the 28nm FDSOI and 28nm FDSOI High-K respectively collected charge with the same 100MeV-cm2/mg heavy ion. With these data it was possible to model the behavior of the collected charge in both devices with the same heavy-ion, reach the Source and Drain Terminal in different places and angles. Using the same tools and the obtained collected charge data of previous simulations, it was designed 6 transistors SRAM Memory Cells. That is done to test these circuits against the heavy ion effects on the data-storage NMOS transistor. In this case, the necessary Ion Linear Energy Transfer (LET) to flip the Bulk SRAM is 12.8 greater than the FDSOI SRAM and 10 times greater than the FDSOI High- K SRAM case, although the amount of charge to flip the cells is almost the same in both cases. With these data it was possible to model the heavy-ion effects in both circuits, discover the Critical Charge of them and the minimum LET to flips these SRAMs.

The growing interest in high speed and RF technologies assert for the importance of reliability characterization beyond the conventional DC methodology. In this work, the influence of bias temperature instability (BTI) stress on RF small signal parameters is shown. The correlation between degradation of DC and RF parameters is established which enables the empirical modelling of stress induced changes. Furthermore, S-Parameters characterization is demonstrated as the tool to qualitatively distinguish between HCI and BTI degradation mechanisms with the help of extracted small signal gate capacitances.