nÃo hà / Neste trabalho foi realizado um estudo numÃrico do interferÃmetro de Sagnac baseado em cristais fotÃnicos e de acoplador Ãptico de metamaterial. Na simulaÃÃo do interferÃmetro foram analisados os efeitos da propagaÃÃo da luz, considerando-se a dispersÃo de velocidade de grupo (GVD) e de terceira ordem (TOD), espalhamento Raman intrapulso, auto-inclinaÃÃo (Self-steepening) e auto-modulaÃÃo de fase na equaÃÃo nÃo linear de SchrÃdinger generalizada. No primeiro momento foi realizado o estudo para quatro fatores de razÃo de divisÃo da potÃncia incidente em uma das portas do dispositivo e trÃs dimensÃes para o comprimento do anel do dispositivo. Para caracterizar o desempenho do sistema, foram analisadas as curvas de transmissÃo, taxa de extinÃÃo, crosstalk e fator de compressÃo do pulso transmitido. No segundo momento, foi verificada a performance do chaveamento nÃo-linear para obtenÃÃo de porta lÃgica sob ModulaÃÃo por Amplitude de Pulsos (PAM). Excitando-se as duas portas de entrada do dispositivo com nÃveis lÃgicos "0" e "1", observando o seu comportamento em uma das saÃdas do dispositivo. Inicialmente, variou-se o parÃmetro de ajuste da modulaÃÃo (|ε|), obtendo-se apenas a porta lÃgica OR. E, em uma segunda aplicaÃÃo, manteve-se o parÃmetro da modulaÃÃo fixa e variou-se a fase de uma das portas de entrada, de 0 a 2π rad, encontrando-se portas lÃgicas do tipo OR, AND e XOR. TambÃm foram estudadas as caracterÃsticas de um guia metamaterial que possui a parte real da permissividade elÃtrica e da permeabilidade magnÃtica negativas. Esse guia metamaterial à acoplado com um guia convencional, observando-se as caracterÃsticas de transmissÃo e potÃncia crÃtica desse tipo de acoplador e, comparando-se com um acoplador convencional. Para essa anÃlise foi utilizado um perfil de automodulaÃÃo decrescente linearmente com cinco valores mÃnimo, observando-se um comportamento de histerese. / In this paper we present a numerical study of the Sagnac interferometer based on photonic crystals and optical coupler metamaterial. In the simulation of the interferometer effects of light propagation were analyzed, considering the dispersion of the group velocity (GVD) and third order (TOD), intrapulse Raman scattering, self-slope (self-steepening) and self-modulation phase in the generalized non-linear SchrÃdinger equation. The first time the study was conducted for four power division ratio of factors incident in one of the device ports and three dimensions for the device ring length. To characterize the system performance, were analyzed the transmission curves, extinction ratio, crosstalk and compression factor of the transmitted pulse. In the second moment, the performance of the non-linear switching was observed for obtaining gate under Pulse Amplitude Modulation (PAM). Exciting the two device input ports with logical levels "0" and "1", observing their behavior in one of the device outputs. Initially, the modulation is varied adjustment parameter (| ε |), obtaining only the logical OR gate. And in a second application, the fixed modulation parameter remained and was varied the phase of the input ports 0 to 2π rad, lying type logic gate OR, AND and XOR. The characteristics of a metamaterial guide that has the real part of electrical permittivity and magnetic permeability negatives were also studied. This metamaterial guide is coupled to a conventional guide, observing the transmission characteristics and critical power of this type of coupler and compared with a conventional coupler. For this analysis we used a decreasing automodulation profile linearly with five minimum, observing a hysteresis behavior.

Este trabalho apresenta o estudo da influência do tensionamento mecânico (strain) no efeito de abaixamento de barreira induzido pelo dreno (DIBL) em dispositivos SOI FinFETs de porta tripla com e sem crescimento seletivo epitaxial. Também é analisada a influência do uso de crescimento seletivo epitaxial nesses dispositivos em relação ao efeito de canal curto mencionado. O uso de transistores verticais de múltiplas portas tem permitido a continuidade do escalamento dos dispositivos, apresentando melhora nos níveis de corrente bem como a supressão dos efeitos de canal curto. No entanto, ao reduzir a largura do canal, aumenta-se a resistência total do transistor, diminuindo seu desempenho. A fim de melhorar essa característica, as técnicas de tensionamento mecânico e crescimento de fonte e dreno tem sido empregadas. No primeiro caso, ao se deformar mecanicamente a estrutura do canal, altera-se o arranjo das camadas eletrônicas que ocasiona o aumento da mobilidade dos portadores. Conseqüentemente, a corrente aumenta tal como a transcondutância do dispositivo. A técnica de crescimento de fonte e dreno chamada de crescimento seletivo epitaxial (SEG) tem como finalidade reduzir ainda mais a resistência elétrica total da estrutura, uma vez que a área dessas regiões aumenta, possibilitando o aumento das áreas de contato, que são responsáveis pela maior parcela da resistência total. Esse trabalho baseia-se em resultados experimentais e simulações numéricas tridimensionais que analisam o comportamento dos transistores com as tecnologias acima apresentadas em função do efeito de DIBL. / This work presents a study about the influence of strain in the drain induced barrier lowering effect (DIBL) in triple gate SOI FinFETs. Also it is analyzed the selective epitaxial growth used in that structures, comparing their behavior in relation to DIBL effect. Using the vertical multi-gate devices become possible the downscale whereas they present higher current level and suppressed short channel effects. However, reducing the channel width, the transistors total resistance increases and consequently its performance decreases. In order to improve this feature, the strained technology and the Source/Drains growth technique has been employed. In the first case, the mechanical deformation causes a change in the electron shell, which improves the carrier mobility. Consequently, the current level and the transconductance also improve. The selective epitaxial growth technique aims to reduce the devices total resistance since these regions areas increase, allowing large contacts which are responsible for the main parcel of the total resistance. This work is based on experimental results and tridimensional simulations that analyze the transistor behavior using the technologies above presented as a function of DIBL effect.

M.Sc. / In this thesis we study the techniques used to calculate the Hamilton operators related to linear optical quantum computing. We also discuss the basic building blocks of linear optical quantum computing (LOQC) by looking at the logic gates and the physical instruments of which they are made.

The master´s thesis deals with the problems of project management. Specifically, it deals with analysis of current state and draft measures for project management at company Hella Autotechnik Nova, s. r. o, which is necessary to optimizing for management of development projects in company technical centre. The thesis uses mainly procedures and project management methods defined by the PMI (Project Management Institute).

Reconfigurable field effect transistors (RFET) have the ability to toggle polarity between n- and p- conductance at runtime [1], [2]. The here presented multiple independent gate (MIG) RFET expands the device functionality by offering additional logical inputs, valuable for e.g. efficient XOR or majority gate implementations [3], [4] or the here originally presented multiplexer circuit. Moreover,https://inspec.iet.org/ideas/#controlled-terms for the first time with a top-down RFET approach equal ON-currents are obtained for every configuration while requiring only one supply voltage (VDD).

Silicon Nanowire (SiNW) based reconfigurable fieldeffect transistors (RFETs) provide an additional gate terminal called the program gate which gives the freedom of programming p-type or n-type functionality for the same device at runtime. This enables the circuit designers to pack more functionality per computational unit. This saves processing costs as only one device type is required, and no doping and associated lithography steps are needed for this technology. In this paper, we present a complete design flow including both logic and physical synthesis for circuits based on SiNW RFETs. We propose layouts of logic gates, Liberty and LEF (Library Exchange Format) files to enable further research in the domain of these novel, functionally enhanced transistors. We show that in the first of its kind comparison, for these fully symmetrical reconfigurable transistors, the area after placement and routing for SiNW based circuits is 17% more than that of CMOS for MCNC benchmarks. Further, we discuss areas of improvement for obtaining better area results from the SiNW based RFETs from a fabrication and technology point of view. The future use of self-aligned techniques to structure two independent gates within a smaller pitch holds the promise of substantial area reduction.

In this paper, we consider devices, circuits, and systems comprised of transistors with integrated ferroelectrics. Said structures are actively being considered by various semiconductor manufacturers as they can address a large and unique design space. Transistors with integrated ferroelectrics could (i) enable a better switch (i.e., offer steeper subthreshold swings), (ii) are CMOS compatible, (iii) have multiple operating modes (i.e., I-V characteristics can also enable compact, 1-transistor, non-volatile storage elements, as well as analog synaptic behavior), and (iv) have been experimentally demonstrated (i.e., with respect to all of the aforementioned operating modes). These device-level characteristics offer unique opportunities at the circuit, architectural, and system-level, and are considered here from device, circuit/architecture, and foundry-level perspectives.

We report on a novel silicon nanowire-based field effect transistor with integrated ferroelectric gate oxide. The concept allows tuning the carrier transport in a non-volatile approach by switching the polarization in the ferroelectric layer close to the source Schottky-junction. We interpret the results in terms of tuning the transmissibility of the Schottky-junction for charge carriers. The experimental results provide a first step towards the integration of memory-in-logic concepts with reconfigurable nanowire transistors.

Logic-in-memory circuits promise to overcome the von-Neumann bottleneck, which constitutes one of the limiting factors to data throughput and power consumption of electronic devices. In the following we present four-input logic gates based on only two ferroelectric FETs (FeFETs) with hafnium oxide as the ferroelectric material. By utilizing two complementary inputs, a XOR and a XNOR gate are created. The use of only two FeFETs results in a compact and nonvolatile design. This realization, moreover, directly couples the memory and logic function of the FeFET. The feasibility of the proposed structures is revealed by electrical measurements of HKMG FeFET memory arrays manufactured in 28nm technology.

As a historically racialized utterance, nigger has been a contested and despised word since the late 17th Century. Now, in the 21st Century, nigga is still considered one of the most impactful words in the English lexicon. This dissertation provides one situated and contingent analysis of nigga as a moment of excess in the Higher Education classroom. I wed Judith Butler’s theorizing of ex-citable speech via her analyses of J.L. Austin’s influential conceptualizations of speech acts and Louis Althusser’s interpellation to Henry Louis Gates’ theory of Signifyin(g) in order to interrogate the multitudinous articulations and appropriations of nigga as a Signifyin(g) performative. Through my theorizing of nigger-nigga as a Signifyin(g) performative, I interrogate the continuity and discontinuity of use specific to the English Composition and Literature classroom, as well as within multiple Higher Education classrooms and discussions. I interrogate use through the methodology of what I classify as Foucauldian-lite Discourse Analysis, in order to examine nigger and nigga as ex-citable speech. My intention is to interrogate how these utterances inflect and influence constructions of multiply conflicting and complimentary histories, identities, subjectivities and power relationships of professors and students in visible and invisible ways. The Untitled Supplemental Image is a metaphor for my methodology. The image is of my mother’s hands, which a woven throughout the dissertation, symbolically represents my memory of the first time I heard the utterance nigger.