Nous présentons dans ce travail la caractérisation, essentiellement en transport, de couches de graphène épitaxiés élaborées par sublimation contrôlée de carbure de silicium (SiC). Des mesures de transport électroniques sont effectuées à basse température (T~1,6 K) et à fort champ magnétique. Dans une première partie, Il est indispensable de se focaliser sur la méthode spécifique (‘graphite cap') utilisée pour la fabrication de tous les échantillons étudiés dans ce travail au CNM, Barcelone. La méthode de ‘graphite cap' permet d'obtenir des couches de graphène en formes de rubans suffisamment isolés entre eux pour la fabrication de dispositifs électroniques. La croissance de graphène donne des résultats très différents suivant les conditions de croissance et les spécificités du substrat de carbure de silicium employé : les échantillons obtenus sur face carbone, et les échantillons sur face silicium.Sur face carbone, deux polytypes de SiC ont été utilisés pour l'élaboration de graphène : (i) sur le polytype ‘6H-SiC (on axis)', des rubans de graphène de l'ordre de 600 µm de longueur et de 6 µm de largeur sont obtenus. La largeur de graphène reste faible car le graphène suit la formation des marches sur le SiC résultant de la reconstruction de la surface pendant la croissance (‘step bunching'). Des monocouches ont été identifiées par spectroscopie Raman. Les résultats de transport sur ces monocouches montrent que la concentration de porteurs, de type trous, varie entre 5x1012cm-2 et 5x1013cm-2. L'effet Hall quantique n'est pas observé à cause du dopage élevé. Mais des oscillations de Shubnikov de Haas ont été bien résolues et étudiées pour extraire leurs phases. La phase des oscillations est égale à zéro, ce qui est une signature de la présence d'une monocouche de graphène.(ii) sur le polytype ‘4H-SiC (8° off axis)', les rubans obtenus sont plus larges et peuvent atteindre une longueur de 600 µm et une largeur de 50 µm. L'utilisation d'un substrat SiC avec une désorientation intentionnelle lors du clivage de la surface initiale permet la coalescence des rubans de graphène. Les résultats de transport sur les monocouches montrent que les porteurs sont toujours de type trous, mais beaucoup moins dopé sur plusieurs monocouches (de l'ordre 8x1011cm-2). L'effet Hall quantique est reporté sur un échantillon dont la mobilité atteint 11 000 cm²/V.s. Une étude à bas champ magnétique est encore réalisée et donnent des informations intéressantes sur l'(anti)localisation faible. Tous les phénomènes quantiques observés sont des signatures sur les propriétés intrinsèques des monocouches de graphène. Pour mieux appréhender le graphène épitaxié, il est important de faire varier la concentration de porteurs. Pour cela, une autre approche est proposée. Nous avons fabriqué une face arrière d'un échantillon semi-isolant par implantation d'ions d'azotes dans le SiC avant la croissance de graphène. Les résultats de transport obtenus sur les monocouches de graphène ont montré l'efficacité de cette grille pour contrôler le type de porteurs. L'effet Hall quantique a été observé pour les deux types de porteurs avec des plateaux de Hall remarquables en largeur (23 T).Sur la face Si, des multicouches de graphène couvrent uniformément toute la surface du substrat. Les multicouches de graphène sont plus épaisses sur les bords de marches que sur les terrasses, identifiées par spectroscopie Raman. Les porteurs sont maintenant de type électrons grâce à la couche de tampon qui existe sur la face Si. Les résultats de transport en champ magnétique et à basse température détectent l'existence d'une anisotropie électrique dues principalement aux marches du substrat SiC. / In this work, we present the characterization, mainly in transport, of epitaxial graphene layers produced by controlled sublimation of silicon carbide substrate (SiC). Electronic transport measurements are performed at low temperature (T ~ 1.6 K) and high magnetic field. In the first part, we explain the specific method ('graphite cap') used for growth of the samples studied in this work at CNM, Barcelona. The method of 'graphite cap' provides graphene ribbons homogeneous and isolated for the fabrication of electronic devices.Graphene on SiC gives very different results depending on the conditions of growth (temperature, pressure…) and the face of SiC substrate used: carbon face (C-face) or silicon face (Si-face).On the carbon face, two SiC polytypes have been used for the graphene growth:(i) On axis 6H-SiC: graphene ribbons are obtained on the whole surface. The length of ribbon approaches 600 µm and the width do not exceed 6 µm. The graphene follows the formation of steps on the SiC resulting from surface reconstruction during growth (‘step bunching'), which affects the graphene width. Monolayers were identified by Raman spectroscopy. For all measured samples, we found that the graphene is p-typed doped with a Hall concentration between 5x1012 and 5x1013cm-2. The quantum Hall effect is not observed because of the high doping level. But the Shubnikov de Haas oscillations (SdH) have been well resolved and studied. The phase of the oscillations is equal to zero, which is a signature from the presence of graphene monolayer.(ii) 8° off axis 4H-SiC: graphene ribbons obtained are larger and can reach a length of 600 µm and a width of 50 µm. The use of a SiC substrate with intentional disorientation upon cleavage of the initial surface allows the coalescence of the graphene ribbons. For all measured devices on this sample, we found that the graphene is p-typed doped (as determined from the sign of the Hall effect) with a Hall concentration between 8x1011 and 1013 cm-2. Mobilities varied between 1000 and 11000 cm²/Vs from device to device at 4K. Magnetoresistance revealed both Shubnikov-de Haas (SdH) oscillations, and interference phenomena (weak localization and antilocalization). For some low doped devices, Quantum Hall effect was observed. All quantum phenomena observed are signatures on the intrinsic properties of graphene monolayers.The main drawback of the epitaxial growth technique is the difficulty to control of the carrier density. Here, we investigate a bottom gate of a graphene device, epitaxially grown on the C-face of SiC substrate. The gate was realized by Nitrogen atoms implantation in the SiC crystal. The transport measurements have shown the effectiveness of the gate to control the type of carriers. The quantum Hall effect was observed for both types of carriers with remarkable Hall plateaus width (23 T).On the silicon face, we discuss results obtained from few layer graphene (FLG) grown epitaxially on the (0001) surface of a 6H-SiC substrate. Carriers are now like electrons through the buffer layer that exists on the Si face. The resulting FLG uniformly covers the substrate on which large step bunched terraces are also visible. The FLG is thicker at the step edges, as evidenced by micro-Raman analysis. Indeed, a noticeable anisotropy of the resistance has been detected by magnetotransport measurements at low temperature and high magnetic field. We will argue that this anisotropy originates from different mobilities, in the terraces and at the step edges.

Cette thèse est dédiée à l'étude d'une nouvelle méthode de formation de films ultra-minces de nanomatériaux carbonés sur surface. Basée sur le transfert d'un film d'eau stabilisé par des tensioactifs, elle permet notamment la réalisation et l'étude de films de nanotubes de carbone et d'oxyde de graphène (GO) aux propriétés remarquables. L’efficacité de l’approche développée est prouvée au travers de l’ajustement précis des caractéristiques des films. Pour l’assemblage d’objets bidimensionnels cette approche est particulièrement pertinente puisque la planéité des feuillets de GO est conservée quelle que soit leur taille. Les avantages de l’approche ne se limitent pas à la réalisation de monocouches à morphologie contrôlée mais s’étendent à la réalisation de films multicouches d’épaisseur ajustée et de très faible rugosité. De plus, cette approche est modulable et permet le transfert de films de nano-objets sur des surfaces de différentes mouillabilités et de grandes dimensions (transfert à l’échelle de wafers). L’intérêt du graphène oxydé en tant qu’analogue du graphene ne se justifie que par une désoxygénation (réduction) efficace du matériau idéalement complétée par une réparation de sa structure sp². Cette thèse aborde ces deux aspects. Les électrodes transparentes à base d'oxyde de graphène réduit (rGO) réalisées au cours de cette thèse sont parmi les plus performantes du domaine. Les résultats présentés incluent également un travail important sur les caractérisations électriques des feuillets individuels et des films de GO et de rGO. Ainsi, nous avons prouvé qu’il est possible de mesurer leur conductivité sans contact, par voie électrochimique (Scanning Electrochemical Microscopy). Même si les performances des électrodes en rGO n'atteignent pas celles des électrodes en graphène, les films réalisés peuvent d’ores et déjà être intégrés dans des dispositifs photovoltaïques. Nos travaux permettent de contribuer au domaine émergeant des cellules basées sur l’hétérojonction entre film de nano-objets carbonés et silicium. Dans le cadre de cette thèse nous montrons en particulier que les analyses par Time Resolved Microwave Conductivity sont complémentaires des mesures effectuées à l’échelle des cellules photovoltaïques, chacune permettant de caractériser, sous des angles différents, l’efficacité de séparation des charges photo-induites. Les travaux réalisés au cours de cette thèse contribuent aux problématiques dépendantes d’assemblage et d’intégration des nano-objets carbonés dans des dispositifs en ouvrant de nombreuses perspectives dans ces domaines en rapide évolution. / This thesis concerns the study of a new solution-based deposition method for the formation of ultrathin carbon nano-object films on surfaces. Based on the transfer of a surfactant-stabilized water film, this method enables the formation and the study of carbon nanotubes and graphene oxide (GO) films with remarkable properties. The efficiency of the developed approach is proven through the fine-tuning of the film properties. This method is particularly well-suited for the assembly of bidimensional nano-objects such as GO sheets, the flatness of which is preserved whatever their dimensions. The advantages of the approach are not limited to the morphological control of monolayer assemblies but extend to the realization of multilayer films of adjustable thickness and extremely low roughness. Besides, it enables the transfer of nano-object films on large (wafer-scale) surfaces of various wettability. The use of graphene oxide as an intermediate step toward graphene only makes sense if it is efficiently deoxygenated (reduced) and, ideally, repaired at the level of sp² domains. This thesis addresses these aspects. The realized transparent electrodes made of reduced graphene oxide (rGO) are among the most efficient in this field. The presented results also include an important work on the electrical characterization of graphene oxide sheets and films. We notably prove that conductivity can be measured without contact by an electrochemical way using Scanning Electrochemical Microscopy. While the performances of rGO electrodes are below those of graphene electrodes, the studied films can already be integrated into photovoltaic devices allowing to contribute to the emerging field of solar cells based on carbon/silicon heterojunctions. We particularly demonstrate that Time Resolved Microwave Conductivity analysis and photovoltaic cell measurements are complementary. Each of these techniques allows evaluating the efficiency of the separation of photo-induced charges. This thesis contributes to the dependent problematics of nano-object assembly and nano-object integration into devices, which are central for the development of nanotechnologies based on the bottom-up strategy.

Cette thèse présente une étude des propriétés de transport à basse température d'échantillons de graphène exfolié. Une première série de mesures menée à une température de 4 Kelvins sur des échantillons contactés par des électrodes constituées d'une bicouche titane/or révèle les phénomènes d'effet Hall quantique et de fluctuations universelles de conductance. L'effet Hall présente une quantification demi-entière propre au graphène. Le caractère universel des fluctuations de conductance est confirmé par les mesures, et une réduction de la longueur de cohérence de phase est observée au point de Dirac. Une autre série d'échantillons, connectés par des électrodes en titane/aluminium, permet l'étude de l'effet de proximité supraconducteur dans le graphène. Ces mesures sont réalisées à des températures comprises entre 100mK et 1K. Dans un premier échantillon, elles font apparaitre le phénomène de réflexions d'Andreev multiples et un précurseur de l'effet Josephson, ainsi qu'une amplification des fluctuations universelles de conductance lorsque les électrodes sont dans l'état supraconducteur. Dans un second échantillon, la présence de localisation forte tend à diminuer l'amplitude des fluctuations universelles de conductance, entrant ainsi en compétition avec l'effet de proximité. / This thesis presents a study of electronic transport in exfoliated graphene at low temperature. A first set of experiment at 4K on samples connected by titanium/gold electrodes exhibits Quantum Hall effect and universal conductance fluctuations. Quantum Hall effect shows a half-integer quantization specific of graphene. The universality of conductance fluctuations is checked experimentally and a decrease of electronic coherence length is observed near the Dirac point. A second series of samples connected by titanium/aluminium electrodes allows the study of superconducting proximity effect in graphene, at temperatures between 1K and 100mK. In a first sample, measurements exhibit multiple Andreev reflexions and indicate nearly established Josephson effect. An amplification of universal conductance fluctuations when electrodes are in the superconducting state is also observed. In a second sample, we observe strong localization, which tends to suppress conductance fluctuation, therefore entering in competition with proximity effect.

A adoção de políticas de incentivo ao desenvolvimento de novas tecnologias de geração de energia tem sido consenso entre especialistas de gestão ambiental. Nesta perspectiva, sistemas de conversão como células a combustível de baixa temperatura de operação (60120 °C) constituem alternativas propícias para fornecimento de energia com emissão reduzida de poluentes. Em adição, o etanol representa uma opção atrativa como combustível devido às vantagens relacionadas à característica renovável e à consolidação da indústria de bioetanol em países como Brasil e Estados Unidos. Contudo, a oxidação do etanol resulta em perdas de eficiência por causa da dificuldade de clivagem da ligação carbono-carbono. Tradicionalmente, platina tem sido usada como catalisador em decorrência das elevadas energia de adsorção e densidade de corrente de troca. Entretanto, a melhora na cinética de reação requer maior utilização catalítica. Neste contexto, um processo de síntese de óxido de grafeno reduzido foi desenvolvido para estabilizar e suportar a fase metálica, aperfeiçoando a área eletroquimicamente ativa. Uma metodologia convencional de síntese química e processamento de óxido de grafeno, a partir de grafite, foi aprimorada visando à fabricação de materiais com características desejáveis aos processos eletrocatalíticos. As estratégias foram baseadas em princípios combinados para introdução controlada de defeitos, redução no estado de aglomeração com auxílio de funcionalização direcionada com surfactante brometo de cetiltrimetilamônio (CTAB) e manufatura de dispersões com aumentada estabilidade coloidal. A nova nanoestrutura forneceu elevada densidade de sítios ativos, que incorreu em valores de corrente mássica aumentados em torno de 2,5 e 5,4 vezes frente à platina suportada em negro de fumo e grafeno aglomerado, respectivamente. / In the last decade, the adoption of policies aimed at developing new technologies for clean energy production has been a broad consensus among environment experts. From this perspective, low-temperature fuel cells (60120 °C) would appear to be promising systems to provide continuous and low-carbon power supply. As an alternative fuel, ethanol would be an appealing option due to renewability and mass production scalability. Nevertheless, the sluggish kinetics of ethanol electro-oxidation represents a major roadblock for the development of direct ethanol fuel cells. Platinum has been the most commonly used catalyst because of the highest energy adsorption and exchange current density. Optimizing reaction kinetics by tuning catalyst utilization has been applied to achieve improved performance on platinum-based catalysts. In this context, reduced graphene oxide sheets were developed to stabilize and support platinum nanoparticles, as well as to enhance the electrochemically active surface area. A conventional wet chemical methodology for synthesizing and processing graphene oxide from graphite was improved for assembling bi and/or tridimensional nanostructures with relevant microstructural features to electrocatalysis. The approach for reducing mass-transport resistances was based on a three-step design strategy aimed at the controlled introduction of defects, in situ cetyltrimethylammonium bromide (CTAB) surfactant functionalization/intercalation and a manufacturing perspective on graphene dispersions from a basic solution thermodynamics theory. The unique nanoarchitecture provided a high density of active sites, which incurred in a mass current value increased by about 2.5 and 5.4 times compared to platinum supported on state-of-the-art carbon black and restacked graphene, respectively.

Les travaux réalisés dans le cadre de cette thèse ont porté sur la réalisation de polymères conducteurs de type polyaniline et de leurs composites associés à du graphène en vue d’une utilisation en tant que matériaux d’électrodes dans des dispositifs de stockage d’énergie de type supercondensateurs. Les travaux se sont tout d’abord orientés sur la synthèse de nouveaux liquides ioniques protiques (LIP) associant des cations pyrrolidinium (Pyrr+) et imidazolium (Imi+) avec des anions p-toluène sulfonate (PTS-), hydrogénosulfate (HSO4-) ou (+)-camphre-10-sulfonate (Cs-), et de l’étude de leur propriétés physico-chimiques (conductivité, viscosité) dans des mélanges binaires LIP/eau. Après avoir déterminé les formulations permettant d’atteindre les propriétés de transport optimales, les capacitances spécifiques de la Pani/HCl dans ces milieux LIP ont été déterminées et nous avons montré que les performances de dispositifs symétriques sont améliorées en capacitance, énergie et en puissance (400 F/g, 7 Wh.kg-1 et 4 kW.kg-1 pour les valeurs les plus élevées) par rapport à un milieu H2SO4 1M. Ces milieux LIP ont également été utilisés comme milieu de synthèse de la Pani. Nous avons ainsi montré que la nature des LIP, qui sont des milieux nanostructurants, pouvait modifier les propriétés électroniques, morphologiques et thermiques des Pani. Un optimum de conductivité électronique de la Pani (22 S/cm) a été atteint avec une synthèse réalisée dans le mélange binaire [Imi][HSO4]/eau 70/30 (pourcentage massique) générant une morphologie fibrillaire et une bonne cyclabilité (93% de rétention de capacitance sur 1000 cycles dans H2SO4 1M. Des valeurs de près de 400 F/g ont été obtenues dans le mélange [Pyrr][HSO4]/eau 41/59 optimisé. Dans le cas de la synthèse de la Pani réalisée dans [Pyrr][PTS]/eau, un gain en stabilité thermique (360°C) est obtenu grâce au dopage par l’anion PTS-. Finalement, une étude exploratoire sur la préparation de composites Pani/graphène et Pani/oxyde de graphène a été réalisée. Les synthèses des nanocomposites ont été effectuées dans les mélanges LIP/eau. L’optimisation de la composition du composite a été étudiée et indique que des rapports massiques de graphène ou oxyde de graphène d’environ 15% permettent d’atteindre des performances de stockage prometteuses et exaltées par rapport à celles obtenues pour des Pani sans graphène. / The work carried out during this PhD thesis is based on the preparation of conducting polymers such as polyaniline (Pani) and their composites associated with graphene for use as electrode materials for supercapacitors application. This work was first dedicated to the synthesis of new protic ionic liquids (PILs) combining pyrrolidinium (Pyrr+) or imidazolium (Imi+) cations with p-toluene sulfonate (PTS-), hydrogen sulfate (HSO4-) or (+)-camphor-10-sulfonate (Cs-) anion, and the study of their physico-chemicals properties (conductivity, viscosity) in binary mixtures PILs/water. After determining the formulations needed to achieve the optimum of transport properties, the specific capacitance of Pani/HCl in these PILs medium was determined, and we have shown that the performance of symmetrical devices are improved in capacitance, specific energy and specific power (400F/g, 7Wh/kg and 4kW/kg for the higher values) in comparison to those obtained in a H2SO4 1M medium. These PILs mediums were also used as a synthesis medium of Pani. We have shown that the nature of PILs, acting as soft template, could change the electronic, morphological and thermal properties of Pani. An optimum of electronic conductivity of Pani (22 S/cm) was obtained with a synthesis realized in the binary mixture [Imi][HSO4]/water 70/30 generating a fibrillar morphology and a good cyclability (93% capacitance retention over 1000 cycles in H2SO4 1M at 2 A/g). For Pani synthesis in [Pyrr][PTS]/water, a thermal stability gain (360 °C) is obtained thanks to a PTS- doped Pani. Finally, a preliminary study on the preparation of composite Pani/graphene and Pani/graphene oxide was performed. The syntheses of nanocomposites were realized in PILs/water mixtures. The optimization of the composition of the Pani nanocomposites was studied and it was found that a mass ratio of about 15% in weight of graphene or graphene oxide enables to obtain promising nanomaterials with higher electrochemical performances compared with pristine Pani.

A adoção de políticas de incentivo ao desenvolvimento de novas tecnologias de geração de energia tem sido consenso entre especialistas de gestão ambiental. Nesta perspectiva, sistemas de conversão como células a combustível de baixa temperatura de operação (60120 °C) constituem alternativas propícias para fornecimento de energia com emissão reduzida de poluentes. Em adição, o etanol representa uma opção atrativa como combustível devido às vantagens relacionadas à característica renovável e à consolidação da indústria de bioetanol em países como Brasil e Estados Unidos. Contudo, a oxidação do etanol resulta em perdas de eficiência por causa da dificuldade de clivagem da ligação carbono-carbono. Tradicionalmente, platina tem sido usada como catalisador em decorrência das elevadas energia de adsorção e densidade de corrente de troca. Entretanto, a melhora na cinética de reação requer maior utilização catalítica. Neste contexto, um processo de síntese de óxido de grafeno reduzido foi desenvolvido para estabilizar e suportar a fase metálica, aperfeiçoando a área eletroquimicamente ativa. Uma metodologia convencional de síntese química e processamento de óxido de grafeno, a partir de grafite, foi aprimorada visando à fabricação de materiais com características desejáveis aos processos eletrocatalíticos. As estratégias foram baseadas em princípios combinados para introdução controlada de defeitos, redução no estado de aglomeração com auxílio de funcionalização direcionada com surfactante brometo de cetiltrimetilamônio (CTAB) e manufatura de dispersões com aumentada estabilidade coloidal. A nova nanoestrutura forneceu elevada densidade de sítios ativos, que incorreu em valores de corrente mássica aumentados em torno de 2,5 e 5,4 vezes frente à platina suportada em negro de fumo e grafeno aglomerado, respectivamente. / In the last decade, the adoption of policies aimed at developing new technologies for clean energy production has been a broad consensus among environment experts. From this perspective, low-temperature fuel cells (60120 °C) would appear to be promising systems to provide continuous and low-carbon power supply. As an alternative fuel, ethanol would be an appealing option due to renewability and mass production scalability. Nevertheless, the sluggish kinetics of ethanol electro-oxidation represents a major roadblock for the development of direct ethanol fuel cells. Platinum has been the most commonly used catalyst because of the highest energy adsorption and exchange current density. Optimizing reaction kinetics by tuning catalyst utilization has been applied to achieve improved performance on platinum-based catalysts. In this context, reduced graphene oxide sheets were developed to stabilize and support platinum nanoparticles, as well as to enhance the electrochemically active surface area. A conventional wet chemical methodology for synthesizing and processing graphene oxide from graphite was improved for assembling bi and/or tridimensional nanostructures with relevant microstructural features to electrocatalysis. The approach for reducing mass-transport resistances was based on a three-step design strategy aimed at the controlled introduction of defects, in situ cetyltrimethylammonium bromide (CTAB) surfactant functionalization/intercalation and a manufacturing perspective on graphene dispersions from a basic solution thermodynamics theory. The unique nanoarchitecture provided a high density of active sites, which incurred in a mass current value increased by about 2.5 and 5.4 times compared to platinum supported on state-of-the-art carbon black and restacked graphene, respectively.

This thesis presents several experiments, generally aiming at visualising the ballistic and topological transport on the high-mobility graphene/boron nitride heterostructure using the scanning gate microscope. For the first experiment, we use the scanning gate microscopy to map out the trajectories of ballistic carriers in high-mobility graphene encapsulated by hexagonal boron nitride and in a weak perpendicular magnetic field. We employ a magnetic focusing transport configuration to image carriers that emerge ballistically from an injector, follow a cyclotron path due to the Lorentz force from an applied magnetic field, and land on an adjacent collector probe. The local potential generated by the scanning tip in the vicinity of the carriers deflects their trajectories, modifying the proportion of carriers focused into the collector. By measuring the voltage at the collector while scanning the tip, we are able to obtain images with arcs that are consistent with the expected cyclotron motion. We also demonstrate that the tip can be used to redirect misaligned carriers back to the collector. For the second experiment, we investigate the graphene van der Waals structures formed by aligning monolayer graphene with insulating layers of hexagonal boron nitride which exhibit a moiré superlattice that is expected to break sublattice symmetry. However, despite an energy gap of several tens of millielectronvolts opening in the Dirac spectrum, electrical resistivity remains lower than expected at low temperature and varies between devices. While subgap states are likely to play a role in this behaviour, their precise nature is still unclear in the community. We therefore perform a scanning gate microscopy study of graphene moiré superlattice devices with comparable activation energy but with different charge disorder levels. In the device with higher charge impurity ($\sim$ 10$^-$ cm$^{-2}$) and lower resistivity ($\sim$ 10 k$\Omega$) at the Dirac point we observe scanning gate response along the graphene edges. Combined with simulations, our measurements suggest that enhanced edge doping is responsible for this effect. In addition, a device with low charge impurity ($\sim$ 10$^{9}$ cm$^{-2}$) and higher resistivity ($\sim$ 100 k$\Omega$) shows subgap states in the bulk. Our measurements provide alternative model to the prevailing theory in the literature in which the topological bandstructures of the graphene moiré superlattices entail an edge currents shunting the insulating bulk. In the third experiment, we continue our study in the graphene moir$\acute e$ superlattices with the newly reported non-local Hall signals at the main Dirac point. It has been associated with the non-zero valley Berry curvature due to the gap opening and the nonlocal signal has been interpreted as the signature of the topological valley Hall effects. However, the nature of such signal is still disputed in the community, due to the vanishing density of states near the Dirac point and the possible topological edge transport in the system. Various artificial contribution without a topological origin of the measurement scheme has also been suggested. In connection to the second experiment, we use the scanning gate microscope to image the non-local Hall resistance as well as the local resistance in the current path. By analysing the features in the two sets of images, we find evidence for topological Hall current in the bulk despite a large artificial components which cannot be distinguished in global transport measurement. In the last experiment, we show the development of a radio-frequency scanning impedance microscopy compatible with the existing scanning gate microscopy and the dilution refrigerator. We detailed the design and the implementation of the radio-frequency reflectometry and the specialised tip holder for the integration of the tip and the transmission lines. We demonstrate the capability of imaging local impedance of the sample by detecting the mechanical oscillation of the tip, the device topography, and the Landau levels in the quantum Hall regime at liquid helium temperature and milli-Kelvin temperature.

Ces dernières décennies, l'urgence croissante de la crise énergétique et la prise de conscience qu'une grande partie de l'énergie utilisée dans le monde est dissipée sous forme de chaleur ont provoqué un engouement pour le développement de modules thermoélectriques performants. Ces dispositifs pourraient récupérer la chaleur provenant de procédés industriels ou d'autres sources, transformant un gradient de température en voltage grâce à l'effet Seebeck. Les matériaux thermoélectriques performants doivent posséder une faible conductivité thermique, une haute conductivité électrique et un grand coefficient Seebeck. L'optimisation simultanée de ces paramètres est un défi majeur pour la physique de la matière condensée et la science des matériaux. Dans l'optique d'améliorer les propriétés thermoélectriques de plusieurs matériaux prometteurs, nous explorons plusieurs stratégies dans lesquelles les défauts (substitutions atomiques, lacunes…), le désordre et le confinement dimensionnel jouent un rôle central. Nous réalisons des calculs en théorie de la fonctionnelle densité et des projections sur des orbitales de Wannier afin de construire des Hamiltoniens et des matrices dynamiques réalistes décrivant leur structure électronique et vibrationnelle dans l'espace réel. Ces paramètres sont ensuite utilisés pour calculer les propriétés de transport thermoélectrique en utilisant le formalisme de Kubo, l'équation de Boltzmann, le formalisme de Landauer et la méthode Chebyshev polynomial Green's function, qui permet un traitement exact du désordre. Nous étudions les propriétés de transport électronique et les performances thermoélectriques de deux matériaux prometteurs pour la production d'énergie à hautes températures, le titanate de strontium et l'oxyde de titane rutile. Nous obtenons un très bon accord entre nos prédictions et un grand nombre de données expérimentales. Nous montrons que l'augmentation du coefficient Seebeck observée dans les superlayers de titanate de strontium, jusque-là attribuée à des effets de confinement quantique, est en réalité très bien expliquée par l'hypothèse d'électrons délocalisés. Nous explorons les effets généraux des états résonant sur le transport électronique dans le cadre d'une étude modèle, et nous trouvons une augmentation d'un facteur six des performances thermoélectriques. Nous examinons ensuite le cas particulier du titanate de strontium, et nous montrons que les performances sont détruites par des effets de localisation si des atomes de Vanadium sont introduits comme impuretés résonantes. Nous étudions l'influence des défauts dans les matériaux bidimensionnels. Contrairement aux adatomes, nous montrons que les substitutions dans les dichalcogénures de métaux de transition ont pour effet de localiser les porteurs de charge. Nous étudions l'effet des lacunes sur le transport de phonons dans le graphène, et nous déterminons les taux de diffusion phonon-lacune. Nous obtenons un très bon accord entre notre théorie et des mesures de conductivité thermique dans des échantillons de graphène irradiés et de tailles finies / Over the past decades, the increasingly pressing need for clean energy sources and the realization that a huge proportion of the world energy consumption is wasted in heat have prompted great interest in developing efficient thermoelectric generation modules. These devices could harvest waste heat from industrial processes or other sources, turning a temperature gradient into a voltage through the Seebeck effect. Efficient thermoelectric materials should exhibit a low thermal conductivity, a high electrical conductivity and a high Seebeck coefficient. Simultaneously optimizing these parameters is a great challenge of condensed matter physics and materials science. With a view to enhance the thermoelectric properties of several promising materials, we explore several strategies in which defects (atomic substitutions, vacancies…), disorder and dimensional confinement play a crucial role. We perform density functional theory calculations and projections on Wannier orbitals to construct realistic Hamiltonians and dynamical matrices describing their electronic and vibrational structure in real space. These parameters are then used to compute the thermoelectric transport properties using the Kubo formalism, the Boltzmann transport equation, the Landauer formalism, and the Chebyshev polynomial Green's function method that allows for an exact treatment of disorder. We investigate the electronic transport properties and thermoelectric performances of two promising materials for high-temperature power generation, strontium titanate and rutile titanium dioxide. Comparison of our predictions with a wealth of experimental data yields a very good agreement. We show that the increase of the Seebeck coefficient observed in strontium titanate superlayers, until now attributed to quantum confinement effects, is in fact well explained assuming delocalized electrons. The general effects of resonant states on electronic transport are explored in a model study, showing a sixfold increase of the thermoelectric performances. The particular case of strontium titanate is then examined, and localization effects are shown to destroy the performances if Vanadium atoms are introduced as resonant impurities. The influence of defects in two-dimensional materials is investigated. Contrary to adatoms, substitutions in transition metal dichalcogenides are shown to localize the charge carriers. We study the effect of vacancies on phonon transport in graphene, and determine the phonon-vacancy scattering rate. Comparison with thermal conductivity data for irradiated and finite-size graphene samples yields a very good agreement between theory and experiments

Condensed matter physics provides us with an opportunity to explore a large variety of systems with diverse properties. Central to the understanding of these systems is a characterization of the nature of their ground states and low energy excitation. Often, such systems show various forms of emergent properties that are absent in the microscopic level. Identification of such emergent phases of condensed matter form an important avenue of research in the field. In this thesis example of such phases and their associated phase transitions have been studied. The work presented here may be broadly divided into two themes: construction of the theoretical framework for understanding materials already studied experimentally, and, trying to provide new theoretical avenues which may be relevant for understanding future experiments. In these studies we shall explore some unconventional phases and phase transitions that may occur in condensed matter systems. A comprehensive understanding of the properties of such unconventional phases and phase transitions is important in the context of the large array of experimentally studied materials that regularly defy conventional wisdom in more than one way. The thesis consists of two distinct parts. In the first part we study three problems in frustrated magnets. The second part consists of studies of the tunnelling spectroscopy of metal-insulator-superconductor junctions in graphene. Studies in frustrated magnets have opened up the possibility of existence of a whole range of phases beyond the already known magnetically ordered ones. Some of these new phases, like the spin nematic or the valence bond solid, display some other conventional order themselves. Others, like the much sort after spin liquid phases displays a whole new kind of order that cannot be captured through the celebrated Landau’s classification of phases on the basis of symmetry breaking and associated order parameters. The phase transitions in these systems are also equally interesting and lead to intriguing possibilities that demand new modes of analysis. In this part of the thesis we shall study the different properties of three magnets with spin-1/2, 1 and 3/2 respectively. We start by providing an introduction to frustrated spin systems in Chapter [1]. The origin of antiferromagnetic interactions in Mott insulators is discussed and the concept of frustration of magnetic interaction is explained. We also point out the causes that may destroy magnetic order in spin systems, particularly the role of quantum fluctuations in presence or absence of magnetic frustration. This is followed with a brief outline of various magnetically ordered and disordered ground states with particular emphasis on the description of the later. We also give a brief outline of various properties of such phases and associated quantum phase transitions particularly noting the influences of quantum interferences encoded in the Berry phase terms. A brief description of the finite temperature properties is also provided. We end an outline of various experimentally relevant compounds that requires comprehensive understanding, some of which have been addressed in this thesis. In Chapter [2] we study the properties of a spin-nematic state in context of the recently discovered spin-1 Mott insulator Nickel Gallium Sulphide (NiGa2S4). This isotropic triangular lattice compound shows no spin ordering till low temperatures. We propose that it may have a particular type of spin-nematic ground state and explain the experimentally observed properties of the compound on the basis of our proposal. Starting from a two band Hubbard model description, relevant for the compound, we derive the Bilinear Biquadratic spin Hamiltonian. We then show, within mean field theory, that this Hamiltonian describes a transition from the spiral state to a ferro-nematic state as a function of the ratio of bilinear and biquadratic couplings. We also study the possible effects of small pinning disorder andmagnetic field and suggest experiments that can possibly distinguish the proposed nematic state from others. In Chapter [3] we explore the effects of the magneto-elastic coupling in the spin-3/2 B-site chromite spinel Cadmium Chromite (CdCr2O4). In this compound the spins form a pyrochlore lattice. Nearest neighbour spins interact antiferromagnetically. Due to frustration the system does not order at low temperatures and instead goes into a classical spin liquid state. Such a cooperative paramagnet is very susceptible to external perturbations which may relieve their frustration. In CdCr2O4, at lower temperatures the magnetic frustration is relieved by distorting the lattice through a first order magnetoelastic transition. Thus the compound presents a case where the relevant perturbation to the frustrated spin interactions is provided by spin-phonon coupling. An effect of such perturbations on a cooperative paramagnet is of general interest and all aspects of this are not understood presently. We take the initial step of characterizing the spin-phonon interaction in detail. Based on recent sound velocity experiments, we construct a microscopic theory for the sound velocity renormalization due to the spin-phonon coupling and explain the recent experimental data obtained by S. Zherlitsyn et al. using our theory we can explain the dependence of the sound velocity on temperature as well as magnetic field. We also construct a Landau theory to explain (qualitatively) the behaviour of sound velocity across the magneto-structural transition. Further, we discuss the effects due to the small Dzyaloshinskii-Moriya interaction that may be present in these compounds. In Chapter [4] we study the possibility of a direct second order quantum phase transition from spiral to dimer phase in two dimensional antiferromagnets. Such transitions between phases with incompatible symmetries are forbidden within conventional Landau Ginzburg-Wilson paradigm of critical phenomena. Early works showed that when the spiral is destroyed by long wavelength fluctuations a fractionalized Z2 spin liquid is obtained. In this work we show an alternative way–the quantum destruction of the spiral magnet. We argue that, when the defects of the spiral phase proliferate and condense, their associated Berry phase automatically leads to dimerization. We apply our theory to study concrete lattice models where such transitions may be observed. This transition is an example of a Landau forbidden deconfined quantum phase transition. The proposed critical theory is naturally written in terms of fractional degrees of freedom which emerge right at the critical point. These fractional particles interact with each other through emergent gauge fields and are deconfined right at the critical point (but are confined in either of the two adjoining phases). We argue, based on existing results, that the monopoles of the gauge field are dangerously irrelevant right at the critical point rendering the later noncompact. The critical point is characterized by an emergent global U (1) conservation law that is absent in the microscopic model, a typical feature of a deconfined quantum critical point. The resultant field theory belongs to the class of anisotropic NCCP3 class which may be studied numerically in future to understand its critical properties. In modern condensed matter physics the emergence of new and novel phases of matter have often been associated with the presence of strong correlations. Indeed, strongly correlated systems seem to harbour in them the potential to realize some of the most unconventional and exotic emergent phases of matter. However in graphene, which is a single layer of graphite, the emergence of novel properties, as present experiments suggest, is due to its unique band structure and not a fallout of intricate correlation effects. Band structure studies of graphene suggest that the material is a zero gap semiconductor with the low energy excitations resembling massless Dirac quasi-particles. The consequence of this is immediate and interesting. It has lead to the possibility of exploring the physics of relativistic fermions in two spatial dimensions and much of this has been studied with great vigour in the last five years. In our studies, presented in Chapter [5], we explore one of the many consequence of this emergent Dirac structure of the low energy quasi-particles, namely the properties of metal-insulator-superconductor junctions of graphene. The twin effect of Klein tunneling of Dirac fermions (and associated transmission resonances) and Andreev reflection (both specular and retro) sets them aside from their conventional counterparts. The graphene normal metal-insulator-superconductor (NIS) junctions show strikingly different properties like oscillations in the sub-gap tunneling conductance as a function of both barrier strength and width. We make a detailed study of this for arbitrary barrier strengths and widths with and without Fermi-surface mismatch between the normal and the superconducting sides. The amplitude of these oscillations are maximum for aligned Fermi surface and vanishes for large Fermi surface mismatch. We provide an understanding for this unconventional behaviour of graphene NIS junctions. We also suggest experimental tests for our theory. Such experimental verification will reveal one more remarkable emergent property in a condensed matter system.

Graphene, a two-dimensional counterpart of three-dimensional graphite, has attracted significant interest, due to its distinctive electrical and mechanical properties, for developing electronic, optoelectronic, and sensor technologies. In general, doping of graphene is important, as it gives rise to p-type and n-type materials, and it adjusts the work function of the graphene. This adjustment is necessary in order to control charge injection and collection in devices such as solar cells and light emitting devices. Current methods for graphene doping involve high temperature process or interactions with chemicals that are not stable. Moreover, the process of transferring graphene from its growth substrate and its exposure to the environment results in a host of chemical groups that can become attached to the film and alter its electronic properties by accepting or donating electrons/holes. Intentional and controllable doping of the graphene, however, requires a deeper understanding of the impact of these groups. The proposed research will attempt to clarify the unintentional doping mechanism in graphene through adsorption or desorption of gas/vapor molecules found in standard environments. A low temperature, controllable and defect-free method for doping graphene layers will also be studied through modifying the interface of graphene and its support substrate with self-assembled monolayers (SAMs) which changes the work function and charge carriers in the graphene layer. Furthermore, current methods of chemical vapor deposition synthesis of graphene requires the film to be transferred onto a second substrate when the metal layer used for growth is not compatible with device fabrication or operation. To address this issue, the proposed work will investigate a new method for wafer scale, transfer-free synthesis of graphene on dielectric substrates using new carbon sources. This technique allows patterned synthesis on the target substrate and is compatible with standard device fabrication technologies; hence, it opens a new pathway for low cost, large area synthesis of graphene films.