In DC to AC power conversion, voltage source inverters (VSI) based current controllers are usually preferred for today’s high performance AC drive which requires excellent dynamic and steady state performances at different transient and load conditions, with the additional advantages like inherent short circuit and over current protection. Out of different types of current controllers, hysteresis controllers are widely used due to their simplicity and ability to meet the requirements for a high performance AC drives. But the conventional hysteresis controllers suffers from wide variation of PWM switching frequency, overshoot in current errors, sub-harmonic components in the current waveform and non-optimum switching at different operating point of the drive system. To mitigate these problems, particularly to control the switching frequency variation, which is the root cause of all other problems, several methodologies like ramp comparison based controller, predictive current controller, etc. were proposed in the literature. But amplitude and phase offset error in the ramp comparison based controllers and complexities involved in the predictive controllers have limited the use of these controllers. Moreover, these type of controllers, which uses three separate and independently controlled tolerance band (sinusoidal type or adaptive) to control the 3-phase currents, shows limited dynamic responses and they are not simple to implement. To tackle the problem of controlling 3-phase currents simultaneously, space vector based hysteresis current controller is very effective as it combines the current errors of all the three phases as a single entity called current error space vector. It has a single controller’s logic with a hysteresis boundary for controlling this current error space vector. Several papers on space vector based hysteresis controllers for 2-level inverter with constant switching frequency have been published, but the application of the constant switching frequency based hysteresis current controllers for multi¬level inverter fed drive system, has not been addressed properly. Use of multi-level inverter in modern high performance drive for medium and high voltage levels is more prominent because of multi-level’s inherent advantages like good power quality, good electromagnetic compatibility (EMC), better DC link voltage utilization, reduced device voltage rating, so on. Even though some of the earlier works describe three-level space vector based hysteresis current controller techniques, they are specific to the particular level of inverters and does not demonstrate constant switching frequency of operation. This thesis proposes a novel approach where nearly constant switching frequency based hysteresis controller can be implemented for any general n-level inverter and it is also independent of inverter topology. In this work, varying parabolic boundary is used as the hysteresis current error boundary for controlling the current in a multi-level space vector structure. The computation of the parabolic boundary is accomplished offline and all the necessary boundary parameters at different operating points are stored in the look-up tables. The varying parabolic boundary for the multi-level space vector structure depends on the sampled reference phase voltage values which are estimated from stator current error information and then using the equivalent circuit model of induction motors. Here, a mapping technique is adopted to bring down all the three phase references to the inner- most carrier region, which results in mapping any outer triangular structure where tip of the voltage space vector is located, to one of the sectors of the inner most hexagon of the multi-level space vector structure. In this way, the required mapped sector information is easily found out to fix the correct orientation of the parabolic boundary in the space vector plane. This mapping technique simplifies the controller’s logic similar to that of a 2-level inverter. For online identification of the inverter switching voltage vectors constructing the present outer triangle of the multi-level space vector structure, the proposed controller utilizes the sampled phase voltage references. This identification technique is novel and also generic for any n-level inverter structure. This controller is having all the advantages of a space vector based hysteresis current controller and that of a multi-level inverter apart from having a nearly constant switching frequency spectrum similar to that of a voltage controlled space vector PWM (VC-SVPWM). Using the proposed controller, simulation study of a five-level inverter fed induction motor (IM) drive scheme, was carried out using Matlab-Simulink. Simulation study showed that the switching frequency variations in a fundamental cycle and over the entire speed range of the linear modulation region, is similar to that of a VC-SVPWM based multi-level VSI. The proposed hysteresis controller is experimentally verified on a 7.5 kW IM vector control drive fed with a five-level VSI. The proposed current error space vector based hysteresis controller providing nearly constant switching frequency is implemented on a TI TMS320LF2812 DSP and Xilinx XC3S200FT256 FPGA based platform. The three-phase reference currents are generated depending on the frequency command and the controller is tested with the drive for the entire operating speed range of the machine in forward and reverse directions. Steady state and quick transient results of the proposed drive are presented in this thesis. This thesis also proposes another type of hysteresis controller, firstly for 2-level inverter and then for general n-level multi-level inverter, which eliminates the parabolic boundary and replaces it with a boundary which is computed online and does not use any look up table for boundary selection. The current error boundary for the proposed hysteresis controller is computed online in a very simple way, using the information of estimated fundamental stator voltages along α and β axes of space vector plane. The method adopted for the proposed controller to compute the boundary does not involve any complicated computations and it selects the optimal vector for switching when current error space vector crosses the boundary. This way adjacent voltage vector switching similar to VC-SVPWM can be ensured. For 2-level inverter, it precisely determines the sector, in which reference voltage vector is present. In multi-level inverter, this controller also finds out the mapped sector information using the same mapping techniques as explained in the first part of this thesis. In both 2-level and multi-level inverter, the proposed controller does not use any look up table for finding individual voltage vector switching times from the estimated voltage references. These switching times are used for the computation of hysteresis boundary for individual vectors. Thus the hysteresis boundary for individual vectors is exactly calculated and the boundary is similar to that of VC-SVPWM scheme for the respective levels of inverter. In the present scheme, the phase voltage harmonic spectrum is very close to that of a constant switching frequency VC-SVPWM inverter. In this thesis, at first, the proposed on line boundary computation scheme is implemented for a 2-level inverter based controller for the initial study, so that it can be executed as fast as 10 µs in a DSP platform, which is required for accurate current control. Then the same algorithm of 2-level inverter is extended for multi-level inverter with the additional logic for online identification of nearest switching voltage vectors (also used in the parabolic boundary case) for the present sampling interval. Previously mentioned mapping technique for multi-level inverter, is also implemented here to bring down the phase voltage references to the inner-most carrier region to realize the multi-level current control strategy equivalent to that of a 2-level inverter PWM current control. Simulation study to verify the steady state as well as transient performance of the proposed controller for both 2-level as well as five-level VSI fed IM drive is carried out using Simulink tool box of MATLAB Simulation Software. The proposed hysteresis controllers are experimentally verified on a 7.5 kW IM vector control drive fed with a two-level VSI and five-level VSI separately. The proposed current error space vector based hysteresis controller providing nearly constant switching frequency profile for phase voltage is implemented on the TI TMS320LF2812 DSP and Xilinx XC3S200FT256 FPGA based platform. The three-phase reference currents are generated depending on the frequency command and the proposed hysteresis controllers are tested with drive for the entire operating speed range of the machine in forward and reverse directions. Steady state and transient results of the proposed drive are also presented for different operating conditions, through the simulation study followed by experimental verifications. Even though the simulation and experimental verifications are done on a 5-level inverter to explain the proposed hysteresis controller, it can be easily implemented for any general n-level inverter, as described in this thesis.

Use of multilevel inverters are inevitable in medium and high voltage drives. This is due to the fact that the multilevel inverters can produce voltages in smaller steps which will reduce the harmonic content and result in more sinusoidal voltages and currents as compared to voltages and currents from two-level inverters. Due to the device limitations, use of two-level inverters is not possible in medium and high voltage drive applications. Though multiple devices can be connected both in series and parallel to achieve two-level operation, the output voltages still suffer from high harmonic content. Multilevel inverters have multiple DC voltage levels with switches that enable one of the voltage steps to be applied to the load. Due to decrease in step size during each switching instant, output voltages and currents of the multilevel inverters have considerably less harmonic content. As the number of levels increase, the switching step reduces thereby the harmonic content also reduces drastically. Due to their advantages, multilevel inverters have gained lot of acceptance in the industry even at lower voltages. The three main configurations that have gained popularity are the neutral point clamped converter, the flying capacitor converter and the cascaded H-bridge converter. Each converter has its own set of advantages and disadvantages. Based on the requirements of various applications, it is possible to fabricate hybrid multilevel topologies that are combinations of the three basic topologies. Researchers around the world have proposed several such converters for diverse applications so as to suit particular requirements like modularity, ease of control, improved reliability, fault tolerant capability etc. The present thesis explores multilevel converters with single DC link to be used for motor drive and grid connected applications. A novel five-level inverter topology formed by cascading a floating capacitor H-bridge module to a regular three-level flying capacitor inverter has been explored in chapter 2. The three-level flying capacitor inverter can generate pole voltages of 0, VDC /2 and VDC . By cascading it with another floating capacitor H-bridge of voltage magnitude VDC /4, pole voltages of 0, VDC /4, VDC/2, 3VDC /4 and VDC . Each of these pole voltage levels can have one or more switching combinations. However each switching combination has a unique effect on the state of the two capacitor voltages. By switching through redundant switching combinations for the same pole voltage, the two capacitors present in each phase can be balanced. The proposed topology also has an advantage that if one of the devices in the H-bridge fails, the topology can still be operated as a regular three-level flying capacitor inverter that can supply full load at rated power by bypassing the faulty H-bridge. This fault tolerant operation of the converter will enable it to be used in applications like traction and marine drives where high reliability is needed. The proposed converter needs a single DC link. All the required voltage levels can be generated from the single DC link. This enables back to back grid connected operation possible where multiple converters can interact with a single DC link. Various pole voltage switching combination and its effect on individual capacitor has been studied. A control algorithm to balance the capacitor voltages by switching through multiple redundancies for the same pole voltage has been developed. The proposed configuration has been implemented in hardware using IGBT H-bridge modules and the control circuitry is realized using DSP and FPGA. The performance of the drive is verified for various frequencies and modulation indices during steady state by running a three phase induction motor at no load. The stability of the drive during transients has been studied by accelerating the machine suddenly at no load and analyzing the performance of the drive. The capacitor voltages are made to deviate from their intended values and the capacitor balancing algorithm has been verified for its ability to bring the capacitor voltages back to their intended values. The experimental results have been presented and discussed in detail in the chapter 2. In the third chapter a common-mode voltage eliminated three-level inverter using a single DC link has been proposed. The power schematic is similar to the one presented in chapter 2. In this chapter the space vector polygon formed by the three phases of the proposed topology has been presented. The common-mode voltage generated by different pole voltage combinations for same space vector location and the redundant switching state combinations has been studied. The pole voltage combinations with zero common mode voltage have been studied. The switching state redundancies for the the pole voltage have been studied. The space vector polygon formed with the pole voltage combinations has been analyzed. A drive is made with the proposed common-mode voltage eliminated inverter. The performance of the drive is tested for various modulation indices and frequencies by running a three phase squirrel cage induction motor at no load. The transient performance is verified by accelerating the motor suddenly and checking the common-mode voltage along with the capacitor voltages. The results have been presented and discussed in detail in chapter 3. This converter has advantages like use of single DC supply, ability to operate as a regular three level converter in case of failure of one of the H-bridges. The work presented in fourth chapter proposes a novel three phase 17-level inverter configuration which utilizes a single DC supply. The rest of voltages are generated using three floating capacitor H-bridges. The redundant switching combinations for generating various pole voltages and their effect on the capacitors have been studied and suitable capacitor balancing algorithm has been developed. The proposed topology has been realized in hardware and the performance of the drive during steady state has been studied by running an induction motor at various modulation indices and frequencies. The transient response of the drive has been observed by accelerating the motor suddenly under no load. The results have been presented in detail in chapter four. This configuration also needs a single DC link. The advantages of this configuration is in case of failure of any devices in the H-bridge, the drive can be operated at reduced number of levels while supplying full load current. This feature helps the drive to be used in fault tolerant applications like marine and traction drives where reliability of the drive is of prime importance. All the topologies that have been presented in the previous chapters have mentioned about the usage of the proposed genre of topologies use single DC link and hence will enable back to back grid tied inverter connection. In the fifth chapter this has has been verified experimentally. The three phase squirrel cage induction motor is driven by using the seventeen-level inverter drive proposed in chapter four. A five-level active front-end is realized by the converter topology proposed in chapter two. The converter is run and the performance of the drive is studied at various modulation indices and speeds of the motor. Various aspects like re-generation operation, acceleration and other aspects of the drive have been studied experimentally and the results are presented in detail. For experimental setup, Semikron SKM75GB12T4 IGBT modules have been used to realize the power topology. These IGBTs are driven by M56972L drivers. The control circuit is realized using TMS320F2812 DSP along with Xilinx Spartan 3 FPGA (XC3S200) has been used. The voltages and currents are sensed using LEM LV-20P and LA 55-P hall effect based sensors.

Durant ces dernières années, l'intérêt pour les technologies des véhicules à faibles émissions de carbone a fait un bond important à travers l'Union européenne (UE) et au-delà, encouragé en cela par les gouvernements et les constructeurs automobiles. De grands espoirs ont été mis plus récemment dans les véhicules électriques (VE) et les véhicules électriques hybrides (VEH) en tant que technologies clés pour atténuer le changement climatique, améliorer la sécurité énergétique et favoriser une nouvelle branche de l'industrie dans le secteur automobile. Ainsi, l'électrification des transports a été considérée comme une stratégie clé pour réduire les émissions de CO2 dans le secteur des transports. Le principal défi est d’augmenter l’autonomie des véhicules (ce qui a toujours été au coeur de la concurrence des industries du transport), ainsi que la durée de vie des volumineuses et coûteuses batteries. Par conséquent, ceci indique que le rendement du convertisseur de puissance est un des points clés à développer pour les générations des véhicules électriques à venir. L’autre paramètre influant est la qualité de la tension et du courant (en particulier la suppression des harmoniques basses fréquences) qui permet de réduire la taille des filtres d'entrée et de sortie de ces convertisseurs. L'objectif de cette thèse est de parvenir à un meilleur rendement en proposant de nouvelles structures de convertisseur de puissance et des commandes vectorielles modifiées ; le choix de deux onduleurs alimentant un moteur ouvert aux deux extrémités. Après l'analyse étape par étape, modèle théorique, simulation et enfin une mise en oeuvre expérimentale, il a été constaté que les nouvelles méthodes proposées sont compétitives et peuvent s’appliquer aux cas des VEH et des VE afin d’apporter des caractéristiques supérieures en termes d’efficacité et de qualité de tension et de courant. / Over the last decade, the interest for low-carbon vehicle technologies has surged among both governments and automotive manufacturers across and beyond the European Union (EU). Great hopes have been put, first, on biofuel vehicles and more recently on electric vehicles (EVs) and hybrid electric vehicles (HEVs) as key technologies to mitigate climate change, enhance energy security and nurture new industry branches within the automotive sector. So electrification of vehicles has been seen as a key strategy to reduce CO2 emissions from the transport sector. The main challenge toward EVs and HEVs is to keep driving for longer distance (which has been always fields for competition among traction industries) as well as lifetime battery cells as storage system. As a result, these indicate importance of power converter efficiency as a key gate for next generations of these up-coming vehicles. The next parameter is the quality of output voltage/current (especially by suppressing low-order harmonics) to reduce the size of filtering. The aim of this thesis is to achieve better efficiency and output voltage/current Total Harmonic Distortion (THD) by proposing novel power converter and associated Pulse Width Modulation (PWM) methods while imposing modification on power converter topology. As a result, dual-inverter is proposed to supply open-end motor from both sides. To this aim, three PWM methods are suggested as: The first one, Modified Space Vector Modulation (MSVM) for dual-inverter supplied by single dc source, improves efficiency by 4-5% (while having lower switching losses), and reduces Common Mode Voltage (CMV) levels by 66%, as well. The voltage/current harmonics are analytically analyzed which shows mainly better performance. Effective switching frequency is also reduced by 66% due to the reduction of number of commutations. In the second one, Near State PWM (NSPWM) is adapted for dual-inverter supplied by single dc source in order to eliminate triplen harmonics (therefore Zero Sequence Voltage, ZSV) and improve efficiency (by 3-4%) compared to Space Vector Modulation (SVM). Additionally due to avoiding use of zero vectors, CMV is improved by 66%. While having 8 commutations instead of 12 in SVM, effective switching frequency is improved by 33%. And finally, the third proposed method deals with NSPWM for dual-inverter supplied by two isolated dc sources wherein efficiency and CMV levels show the same performance as previous one. However, in this method, voltage THD is highly reduced compared to SVM. Triplen harmonics of the output voltage are inherently suppressed by the structure. These 3 proposed methods are analytically studied and their performances are step by step simulated in Matlab/Simulink environment. Then the methods are implemented in dualinverter fed open-end motor in laboratory setup; and the results are compared with these of SVM. Finally, it is found that novel proposed methods are so competitive solutions to be applied in HEVs and EVs and bring superior efficiency and voltage/current harmonic features.

Indiana University-Purdue University Indianapolis (IUPUI) / The existing topologies of solar micro inverter use a number of stages before the DC input voltage can be converted to AC output voltage. These stages may contain one or more power converters. It may also contain a diode rectifier, transformer and filter. The number of active and passive components is very high. In this thesis, the design of a new solar micro inverter is proposed. This new micro inverter consists of a new single switch inverter which is obtained by modifying the already existing single ended primary inductor (SEPIC) DC-DC converter. This new inverter is capable of generating pure sinusoidal waveform from DC input voltage. The design and operation of the new inverter are studied in detail. This new inverter works with a controller to produce any kind of output waveform. The inverter is found to have four different modes of operation. The new inverter is modeled using state space averaging. The system is a fourth order system which is non-linear due to the inherent switching involved in the circuit. The system is linearized around an operating point to study the system as a linear system. The control to output transfer function of the inverter is found to be non-minimum phase. The transfer functions are studied using root locus. From the control perspective, the presence of right half zero makes the design of the controller structure complicated. The PV cell is modeled using the cell equations in MATLAB. A maximum power point tracking (MPPT) technique is implemented to make sure the output power of the PV cell is always maximum which allows full utilization of the power from the PV cell. The perturb and observe (P&O) algorithm is the simplest and is used here. The use of this new inverter eliminates the various stages involved in the conventional solar micro inverter. Simulation and experimental results carried out on the setup validate the proposed structure of inverter.

Die enorme Steigerung der Leistungsfähigkeit integrierter Schaltkreise wird seit über 50 Jahren im Wesentlichen durch eine Verkleinerung der Bauelementdimensionen erzielt. Aufgrund des Erreichens physikalischer Grenzen kann dieser Trend, unabhängig von der Lösung technologischer Probleme, langfristig nicht fortgesetzt werden. Diese Arbeit beschäftigt sich mit der Entwicklung und Herstellung neuartiger Transistoren und Schaltungen, welche im Vergleich zu konventionellen Bauelementen funktionserweitert sind, wodurch ein zur Skalierung alternativer Ansatz vorgestellt wird. Ausgehend von gewachsenen und nominell undotierten Silizium-Nanodrähten wird die Herstellung von Schottky-Barrieren-Feldeffekttransistoren (SBFETs) mit Hilfe etablierter und selbst entwickelter Methoden beschrieben und die Ladungsträgerinjektion unter dem Einfluss elektrischer Felder an den dabei erzeugten abrupten Metall–Halbleiter-Grenzflächen analysiert. Zur Optimierung der Injektionsvorgänge dienen strukturelle Modifikationen, welche zu erhöhten ambipolaren Strömen und einer vernachlässigbaren Hysterese der SBFETs führen. Mit dem rekonfigurierbaren Feldeffekttransistor (RFET) konnte ein Bauelement erzeugt werden, bei dem sich Elektronen- und Löcherinjektion unabhängig und bis zu neun Größenordnungen modulieren lassen. Getrennte Topgate-Elektroden über den Schottkybarrieren ermöglichen dabei die reversible Konfiguration von unipolarer Elektronenleitung (n-Typ) zu Löcherleitung (p-Typ) durch eine Programmierspannung, wodurch die Funktionen konventioneller FETs in einem universellen Bauelement vereint werden. Messungen und 3D-FEM-Simulationen geben einen detaillierten Einblick in den elektrischen Transport und dienen der anschaulichen Beschreibung der Funktionsweise. Systematische Untersuchungen zu Änderungen im Transistoraufbau, den Abmessungen und der Materialzusammensetzung verdeutlichen, dass zusätzliche Strukturverkleinerungen sowie die Verwendung von Halbleitern mit niedrigem Bandabstand die elektrische Charakteristik dieser Transistoren weiter verbessern. Im Hinblick auf die Realisierung neuartiger Schaltungen wird ein Konzept beschrieben, die funktionserweiterten Transistoren in einer energieeffizienten Komplementärtechnologie (CMOS) nutzbar zu machen. Die dafür notwendigen gleichen Elektronen- und Löcherstromdichten konnten durch einen modifizierten Ladungsträgertunnelprozess infolge mechanischer Verspannungen an den Schottkyübergängen erzielt und weltweit erstmalig an einem Transistor gezeigt werden. Der aus einem <110>-Nanodraht mit 12 nm Si-Kerndurchmesser erzeugte elektrisch symmetrische RFET weist dabei eine bisher einzigartige Kennliniensymmetrie auf.Die technische Umsetzung des Schaltungskonzepts erfolgt durch die Integration zweier RFETs innerhalb eines Nanodrahts zum dotierstofffreien CMOS-Inverter, der flexibel programmiert werden kann. Die rekonfigurierbare NAND/NOR- Schaltung verdeutlicht, dass durch die RFET-Technologie die Bauelementanzahl reduziert und die Funktionalität des Systems im Vergleich zu herkömmlichen Schaltungen erhöht werden kann. Ferner werden weitere Schaltungsbeispiele sowie die technologischen Herausforderungen einer industriellen Umsetzung des Konzeptes diskutiert. Mit der funktionserweiterten, dotierstofffreien RFET-Technologie wird ein neuartiger Ansatz beschrieben, den technischen Fortschritt der Elektronik nach dem erwarteten Ende der klassischen Skalierung zu ermöglichen. / The enormous increase in performance of integrated circuits has been driven for more than 50 years, mainly by reducing the device dimensions. This trend cannot continue in the long term due to physical limits being reached. The scope of this thesis is the development and fabrication of novel kinds of transistors and circuits that provide higher functionality compared to the classical devices, thus introducing an alternative approach to scaling. The fabrication of Schottky barrier field effect transistors (SBFETs) based on nominally undoped grown silicon nanowires using established and developed techniques is described. Further the charge carrier injection in the fabricated metal to semiconductor interfaces is analyzed under the influence of electrical fields. Structural modifications are used to optimize the charge injection resulting in increased ambipolar currents and negligible hysteresis of the SBFETs. Moreover, a device has been developed called the reconfigurable field-effect transistor (RFET), in which the electron and hole injection can be independently controlled by up to nine orders of magnitude. This device can be reversibly configured from unipolar electron conducting (ntype) to hole conducting (p-type) by the application of a program voltage to the two individual top gate electrodes at the Schottky junctions. So the RFET merges the functionality of classical FETs into one universal device. Measurements and 3D finite element method simulations are used to analyze the electrical transport and to describe the operation principle. Systematic investigations of changes in the device structure, dimensions and material composition show enhanced characteristics in scaled and low bandgap semiconductor RFET devices. For the realization of novel circuits, a concept is described to use the enhanced functionality of the transistors in order to realize energy efficient complementary circuits (CMOS). The required equal electron and hole current densities are achieved by the modification of charge carrier tunneling due to mechanical stress and are shown for the first time ever on a transistor. An electrically symmetric RFET based on a compressive strained nanowire in <110> crystal direction and 12 nm silicon core diameter exhibits unique electrical symmetry. The circuit concept is demonstrated by the integration of two RFETs on a single nanowire, thus realizing a dopant free CMOS inverter which can be programmed flexibly. The reconfigurable NAND/NOR shows that the RFET technology can lead to a reduction of the transistor count and can increase the system functionality. Additionally, further circuit examples and the challenges of an industrial implementation of the concept are discussed.The enhanced functionality and dopant free RFET technology describes a novel approach to maintain the technological progress in electronics after the expected end of classical device scaling.

Die enorme Steigerung der Leistungsfähigkeit integrierter Schaltkreise wird seit über 50 Jahren im Wesentlichen durch eine Verkleinerung der Bauelementdimensionen erzielt. Aufgrund des Erreichens physikalischer Grenzen kann dieser Trend, unabhängig von der Lösung technologischer Probleme, langfristig nicht fortgesetzt werden. Diese Arbeit beschäftigt sich mit der Entwicklung und Herstellung neuartiger Transistoren und Schaltungen, welche im Vergleich zu konventionellen Bauelementen funktionserweitert sind, wodurch ein zur Skalierung alternativer Ansatz vorgestellt wird. Ausgehend von gewachsenen und nominell undotierten Silizium-Nanodrähten wird die Herstellung von Schottky-Barrieren-Feldeffekttransistoren (SBFETs) mit Hilfe etablierter und selbst entwickelter Methoden beschrieben und die Ladungsträgerinjektion unter dem Einfluss elektrischer Felder an den dabei erzeugten abrupten Metall–Halbleiter-Grenzflächen analysiert. Zur Optimierung der Injektionsvorgänge dienen strukturelle Modifikationen, welche zu erhöhten ambipolaren Strömen und einer vernachlässigbaren Hysterese der SBFETs führen. Mit dem rekonfigurierbaren Feldeffekttransistor (RFET) konnte ein Bauelement erzeugt werden, bei dem sich Elektronen- und Löcherinjektion unabhängig und bis zu neun Größenordnungen modulieren lassen. Getrennte Topgate-Elektroden über den Schottkybarrieren ermöglichen dabei die reversible Konfiguration von unipolarer Elektronenleitung (n-Typ) zu Löcherleitung (p-Typ) durch eine Programmierspannung, wodurch die Funktionen konventioneller FETs in einem universellen Bauelement vereint werden. Messungen und 3D-FEM-Simulationen geben einen detaillierten Einblick in den elektrischen Transport und dienen der anschaulichen Beschreibung der Funktionsweise. Systematische Untersuchungen zu Änderungen im Transistoraufbau, den Abmessungen und der Materialzusammensetzung verdeutlichen, dass zusätzliche Strukturverkleinerungen sowie die Verwendung von Halbleitern mit niedrigem Bandabstand die elektrische Charakteristik dieser Transistoren weiter verbessern. Im Hinblick auf die Realisierung neuartiger Schaltungen wird ein Konzept beschrieben, die funktionserweiterten Transistoren in einer energieeffizienten Komplementärtechnologie (CMOS) nutzbar zu machen. Die dafür notwendigen gleichen Elektronen- und Löcherstromdichten konnten durch einen modifizierten Ladungsträgertunnelprozess infolge mechanischer Verspannungen an den Schottkyübergängen erzielt und weltweit erstmalig an einem Transistor gezeigt werden. Der aus einem <110>-Nanodraht mit 12 nm Si-Kerndurchmesser erzeugte elektrisch symmetrische RFET weist dabei eine bisher einzigartige Kennliniensymmetrie auf.Die technische Umsetzung des Schaltungskonzepts erfolgt durch die Integration zweier RFETs innerhalb eines Nanodrahts zum dotierstofffreien CMOS-Inverter, der flexibel programmiert werden kann. Die rekonfigurierbare NAND/NOR- Schaltung verdeutlicht, dass durch die RFET-Technologie die Bauelementanzahl reduziert und die Funktionalität des Systems im Vergleich zu herkömmlichen Schaltungen erhöht werden kann. Ferner werden weitere Schaltungsbeispiele sowie die technologischen Herausforderungen einer industriellen Umsetzung des Konzeptes diskutiert. Mit der funktionserweiterten, dotierstofffreien RFET-Technologie wird ein neuartiger Ansatz beschrieben, den technischen Fortschritt der Elektronik nach dem erwarteten Ende der klassischen Skalierung zu ermöglichen.:Kurzzusammenfassung Abstract 1 Einleitung 2 Nanodrähte als aktivesGebiet fürFeldeffekttransistoren 2.1 Elektrisches Potential und Ladungsträgertransport in Transistoren 2.1.1 Potentialverlauf 2.1.2 Ladungsträgerfluss und Steuerung 2.2 Der Metall-Halbleiter-Kontakt 2.2.1 Ladungsträgertransport über den Schottky-Kontakt 2.2.2 Thermionische Emission 2.2.3 Ladungsträgertunneln 2.2.4 Methoden zur Beschreibung der Gesamtinjektion 2.3 Der Schottkybarrieren-Feldeffekttransistor 2.4 Stand der Technik 2.4.1 Elektronische Bauelemente auf Basis von Nanoröhren und Nanodrähten 2.4.2 Rekonfigurierbare Transistoren und Schaltungen 2.5 Zusammenfassung 3 TechnologienzurHerstellung vonNanodraht-Transistoren 3.1 Herstellung von SB-Nanodraht-Transistoren mit Rückseitengatelektrode 3.1.1 Nanodraht-Strukturbildung durch VLS-Wachstum 3.1.2 Drahttransfer 3.1.3 Herstellung von Kontaktelektroden 3.1.4 Herstellung von Schottky-Kontakten innerhalb eines Nanodrahtes 3.2 Strukturerzeugung mittels Elektronenstrahllithographie 3.2.1 Schichtstrukturierung mittels Elektronenstrahllithographie 3.2.2 Strukturierung mittels ungerichteter Elektronenstrahllithographie 3.2.3 Justierte Strukturierung mittels Elektronenstrahllithographie 3.2.4 Justierte Strukturierung mittels feinangepasster Elektronenstrahllithographie 3.2.5 Justierte Strukturierung mittels kombinierter optischer und Elektronenstrahllithographie 3.3 Zusammenfassung 4 Realisierung und Optimierung siliziumbasierter Schottkybarrieren- Nanodraht-Transistoren 4.1 Nanodraht-Transistor mit einlegierten Silizidkontakten 4.1.1 Transistoren auf Basis von Nanodrähten in <112>-Richtung 4.1.2 Transistoren mit veränderten Abmessungen 4.2 Analyse und Optimierung der Gatepotentialverteilung im Drahtquerschnitt in Kontaktnähe 4.3 Si/SiO2 - Core/Shell Nanodrähte als Basis für elektrisch optimierte Transistoren 4.3.1 Si-Oxidation im Volumenmaterial 4.3.2 Si-Oxidation am Draht 4.3.3 Silizidierung innerhalb der Oxidhülle 4.3.4 Core/Shell-Nanodraht-Transistoren mit Rückseitengate 4.4 Analyse der Gatepotentialwirkung in Abhängigkeit des Abstands zur Barriere 4.5 Zusammenfassung 5 RFET - Der Rekonfigurierbare Feldeffekttransistor 5.1 Realisierung des RFET 5.2 Elektrische Charakteristik 5.2.1 Elektrische Beschaltung und Funktionsprinzip 5.2.2 Elektrische Messungen 5.2.3 Auswertung 5.3 Transporteigenschaften des rekonfigurierbaren Transistors 5.3.1 Tunnel- und thermionische Ströme im RFET 5.3.2 Analyse der Transportvorgänge mit Hilfe der numerischen Simulation 5.3.3 Schaltzustände des RFET 5.3.4 On-zu-Off Verhältnisse des RFET 5.3.5 Einfluss der Bandlücke auf das On- zu Off-Verhältnis 5.3.6 Abhängigkeiten von geometrischen, materialspezifischen und physikalischen Parametern 5.3.7 Skalierung des RFET 5.3.8 Längenskalierung des aktiven Gebietes 5.4 Vergleich verschiedener Konzepte zur Rekonfigurierbarkeit 5.5 Zusammenfassung 6 Schaltungen aus rekonfigurierbaren Bauelementen 6.1 Komplementäre Schaltkreise 6.1.1 Inverter 6.1.2 Universelle Gatter 6.1.3 Anforderungen an komplementäre Bauelemente 6.1.4 Individuelle Symmetrieanpassung statischer Transistoren 6.2 Rekonfigurierbare Transistoren als Bauelemente für komplementäre Elektronik 6.2.1 Analyse des RFET als komplementäres Bauelement 6.2.2 Bauelementbedingungen für eine rekonfigurierbare komplementäre Elektronik 6.3 Erzeugung eines RFETs für rekonfigurierbare komplementäre Schaltkreise 6.3.1 Möglichkeiten der Symmetrieanpassung 6.3.2 Erzeugung eines RFET mit elektrischer Symmetrie 6.3.3 Erzeugung und Aufbau des symmetrischen RFET 6.3.4 Elektrische Eigenschaften des symmetrischen RFET 6.4 Realisierung von komplementären rekonfigurierbaren Schaltungen 6.4.1 Integration identischer RFETs 6.4.2 RFET-basierter komplementärer Inverter 6.4.3 Rekonfigurierbarer CMOS-Inverter 6.4.4 PMOS/NMOS-Inverter 6.4.5 Zusammenfassung zur RFET-Inverterschaltung 6.4.6 Rekonfigurierbarer NAND/NOR-Schaltkreis 6.5 Zusammenfassung und Diskussion 7 Zusammenfassung und Ausblick 7.1 Zusammenfassung 7.2 Ausblick Anhang Symbol- und Abkürzungsverzeichnis Literaturverzeichnis Publikations- und Vortragsliste Danksagung Eidesstattliche Erklärung / The enormous increase in performance of integrated circuits has been driven for more than 50 years, mainly by reducing the device dimensions. This trend cannot continue in the long term due to physical limits being reached. The scope of this thesis is the development and fabrication of novel kinds of transistors and circuits that provide higher functionality compared to the classical devices, thus introducing an alternative approach to scaling. The fabrication of Schottky barrier field effect transistors (SBFETs) based on nominally undoped grown silicon nanowires using established and developed techniques is described. Further the charge carrier injection in the fabricated metal to semiconductor interfaces is analyzed under the influence of electrical fields. Structural modifications are used to optimize the charge injection resulting in increased ambipolar currents and negligible hysteresis of the SBFETs. Moreover, a device has been developed called the reconfigurable field-effect transistor (RFET), in which the electron and hole injection can be independently controlled by up to nine orders of magnitude. This device can be reversibly configured from unipolar electron conducting (ntype) to hole conducting (p-type) by the application of a program voltage to the two individual top gate electrodes at the Schottky junctions. So the RFET merges the functionality of classical FETs into one universal device. Measurements and 3D finite element method simulations are used to analyze the electrical transport and to describe the operation principle. Systematic investigations of changes in the device structure, dimensions and material composition show enhanced characteristics in scaled and low bandgap semiconductor RFET devices. For the realization of novel circuits, a concept is described to use the enhanced functionality of the transistors in order to realize energy efficient complementary circuits (CMOS). The required equal electron and hole current densities are achieved by the modification of charge carrier tunneling due to mechanical stress and are shown for the first time ever on a transistor. An electrically symmetric RFET based on a compressive strained nanowire in <110> crystal direction and 12 nm silicon core diameter exhibits unique electrical symmetry. The circuit concept is demonstrated by the integration of two RFETs on a single nanowire, thus realizing a dopant free CMOS inverter which can be programmed flexibly. The reconfigurable NAND/NOR shows that the RFET technology can lead to a reduction of the transistor count and can increase the system functionality. Additionally, further circuit examples and the challenges of an industrial implementation of the concept are discussed.The enhanced functionality and dopant free RFET technology describes a novel approach to maintain the technological progress in electronics after the expected end of classical device scaling.:Kurzzusammenfassung Abstract 1 Einleitung 2 Nanodrähte als aktivesGebiet fürFeldeffekttransistoren 2.1 Elektrisches Potential und Ladungsträgertransport in Transistoren 2.1.1 Potentialverlauf 2.1.2 Ladungsträgerfluss und Steuerung 2.2 Der Metall-Halbleiter-Kontakt 2.2.1 Ladungsträgertransport über den Schottky-Kontakt 2.2.2 Thermionische Emission 2.2.3 Ladungsträgertunneln 2.2.4 Methoden zur Beschreibung der Gesamtinjektion 2.3 Der Schottkybarrieren-Feldeffekttransistor 2.4 Stand der Technik 2.4.1 Elektronische Bauelemente auf Basis von Nanoröhren und Nanodrähten 2.4.2 Rekonfigurierbare Transistoren und Schaltungen 2.5 Zusammenfassung 3 TechnologienzurHerstellung vonNanodraht-Transistoren 3.1 Herstellung von SB-Nanodraht-Transistoren mit Rückseitengatelektrode 3.1.1 Nanodraht-Strukturbildung durch VLS-Wachstum 3.1.2 Drahttransfer 3.1.3 Herstellung von Kontaktelektroden 3.1.4 Herstellung von Schottky-Kontakten innerhalb eines Nanodrahtes 3.2 Strukturerzeugung mittels Elektronenstrahllithographie 3.2.1 Schichtstrukturierung mittels Elektronenstrahllithographie 3.2.2 Strukturierung mittels ungerichteter Elektronenstrahllithographie 3.2.3 Justierte Strukturierung mittels Elektronenstrahllithographie 3.2.4 Justierte Strukturierung mittels feinangepasster Elektronenstrahllithographie 3.2.5 Justierte Strukturierung mittels kombinierter optischer und Elektronenstrahllithographie 3.3 Zusammenfassung 4 Realisierung und Optimierung siliziumbasierter Schottkybarrieren- Nanodraht-Transistoren 4.1 Nanodraht-Transistor mit einlegierten Silizidkontakten 4.1.1 Transistoren auf Basis von Nanodrähten in <112>-Richtung 4.1.2 Transistoren mit veränderten Abmessungen 4.2 Analyse und Optimierung der Gatepotentialverteilung im Drahtquerschnitt in Kontaktnähe 4.3 Si/SiO2 - Core/Shell Nanodrähte als Basis für elektrisch optimierte Transistoren 4.3.1 Si-Oxidation im Volumenmaterial 4.3.2 Si-Oxidation am Draht 4.3.3 Silizidierung innerhalb der Oxidhülle 4.3.4 Core/Shell-Nanodraht-Transistoren mit Rückseitengate 4.4 Analyse der Gatepotentialwirkung in Abhängigkeit des Abstands zur Barriere 4.5 Zusammenfassung 5 RFET - Der Rekonfigurierbare Feldeffekttransistor 5.1 Realisierung des RFET 5.2 Elektrische Charakteristik 5.2.1 Elektrische Beschaltung und Funktionsprinzip 5.2.2 Elektrische Messungen 5.2.3 Auswertung 5.3 Transporteigenschaften des rekonfigurierbaren Transistors 5.3.1 Tunnel- und thermionische Ströme im RFET 5.3.2 Analyse der Transportvorgänge mit Hilfe der numerischen Simulation 5.3.3 Schaltzustände des RFET 5.3.4 On-zu-Off Verhältnisse des RFET 5.3.5 Einfluss der Bandlücke auf das On- zu Off-Verhältnis 5.3.6 Abhängigkeiten von geometrischen, materialspezifischen und physikalischen Parametern 5.3.7 Skalierung des RFET 5.3.8 Längenskalierung des aktiven Gebietes 5.4 Vergleich verschiedener Konzepte zur Rekonfigurierbarkeit 5.5 Zusammenfassung 6 Schaltungen aus rekonfigurierbaren Bauelementen 6.1 Komplementäre Schaltkreise 6.1.1 Inverter 6.1.2 Universelle Gatter 6.1.3 Anforderungen an komplementäre Bauelemente 6.1.4 Individuelle Symmetrieanpassung statischer Transistoren 6.2 Rekonfigurierbare Transistoren als Bauelemente für komplementäre Elektronik 6.2.1 Analyse des RFET als komplementäres Bauelement 6.2.2 Bauelementbedingungen für eine rekonfigurierbare komplementäre Elektronik 6.3 Erzeugung eines RFETs für rekonfigurierbare komplementäre Schaltkreise 6.3.1 Möglichkeiten der Symmetrieanpassung 6.3.2 Erzeugung eines RFET mit elektrischer Symmetrie 6.3.3 Erzeugung und Aufbau des symmetrischen RFET 6.3.4 Elektrische Eigenschaften des symmetrischen RFET 6.4 Realisierung von komplementären rekonfigurierbaren Schaltungen 6.4.1 Integration identischer RFETs 6.4.2 RFET-basierter komplementärer Inverter 6.4.3 Rekonfigurierbarer CMOS-Inverter 6.4.4 PMOS/NMOS-Inverter 6.4.5 Zusammenfassung zur RFET-Inverterschaltung 6.4.6 Rekonfigurierbarer NAND/NOR-Schaltkreis 6.5 Zusammenfassung und Diskussion 7 Zusammenfassung und Ausblick 7.1 Zusammenfassung 7.2 Ausblick Anhang Symbol- und Abkürzungsverzeichnis Literaturverzeichnis Publikations- und Vortragsliste Danksagung Eidesstattliche Erklärung

Amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) constitute the central theme of this thesis. Within this theme, three primary areas of focus are pursued. The first focus is the realization of a transparent three-stage ring oscillator with buffered output and an output frequency in the megahertz range. This leads to the possibility of transparent radio frequency applications, such as transparent RFID tags. At the time of its fabrication, this ring oscillator was the fastest oxide electronics ring oscillator reported, with an output frequency of 2.16 MHz, and a time delay per stage of 77 ns. The second focus is to ascertain whether a three-terminal device (i.e., a TFT) is an appropriate structure for conducting space-charge-limited-current (SCLC) measurements. It is found that it is not appropriate to use a diode-tied or gate-biased TFT configuration for conducting a SCLC assessment since square-law theory shows that transistor action alone gives rise to I proportional to V² characteristics, which can easily be mistakenly attributed to a SCLC mechanism. Instead, a floating gate TFT configuration is recommended for accomplishing SCLC assessment of AOS channel layers. The final focus of this work is to describe an assessment procedure appropriate for determining if a dielectric is suitable for use as a TFT gate insulator. This is accomplished by examining the shape of a MIM capacitor's log(J)-ξ curve, where J is the measured current density and ξ is the applied electric field. An appropriate dielectric for use as a TFT gate insulator will have a log(J)-ξ curve that expresses a clear breakover knee, indicating a high-field conduction mechanism dominated by Fowler-Nordheim tunneling. Such a dielectric produces a TFT with a minimal gate leakage which does not track with the drain current in a log(I[subscript D])-V[subscript GS] transfer curve. An inappropriate dielectric for use as a TFT gate insulator will have a log(J)-ξ curve that does not express a clear breakover knee, indicating that the dominate conduction mechanism is defect driven (i.e., pin-hole like shunt paths) and, therefore, the dielectric is leaky. It is shown that experimental log(J)-ξ leakage curves can be accurately simulated using Ohmic, space-charge-limited current (SCLC), and Fowler-Nordheim tunneling conduction mechanisms. / Graduation date: 2010

En aéronautique, les contraintes sont telles que la masse des filtres peut représenterjusqu'à 50% de la masse totale du convertisseur. Ces dernières années, les convertisseursmulticellulaires parallèles entrelacés et magnétiquement couplés ont conduit à améliorer lesperformances des convertisseurs (densité de puissance, efficacité, dynamique,...). Denombreuses topologies de filtrages entrelacés existent, l'objectif principal de cette étude est detrouver parmi ces topologies celles qui sont les mieux adaptées à la réalisation d’un onduleurde tension 110Veff / 400Hz triphasé 25kVA. Il est démontré que le choix du type de matériaumagnétique a un impact déterminant sur le poids, le volume et les pertes du convertisseur. Quidit parallélisation, dit multiplication du nombre de semi-conducteurs. Ces nouvelles structuresdoivent garantir à la fois un rendement élevé, une masse faible et une continuté defonctionnement, même en cas de panne d’un semiconducteur de puissance ou de sacommande. Mais coupler les phases entre elles, impose un lien indissociable qui peut êtrenuisible au fonctionnement de la structure en cas de dysfonctionnement. Des solutionsexistent et sont abordées dans l’étude. Enfin, la réalisation pratique d'un prototype semiindustrielde convertisseur triphasé utilisant des transformateurs interphases est présentée. Ils’agit d’un onduleur réseau avionique triphasé avec reconstruction de neutre pour fonctionneren déséquilibré. Les résultats expérimentaux démontrent l’avantage d’un convertisseur / In aeronautics field, the constraints are such as the mass of the filters can represent upto 50% of the total mass of the converter. During the last years, magnetic coupled interleavedconverters enhances performances (power density, efficiency, transient response). It existeseveral possibilities for use interleaved coupled topologies that use inter-phase transformerexist, the main objective of this study is to find among these topologies the best adaptedconfiguration in the context of a three-phase voltage inverter 110Veff/400Hz 25kVA. Thechoice of the magnetic material type has a great impact on determining the weight, thevolume and the losses of the converter. Parallelization leads to increase the semiconductornumber. These new structures must guarantee at the same time a raised efficiency, a low massand a great reliability, even in the event of case of breakdown of a power semiconductor orhis driver circuit. But coupleing the phases between themselve, imposes a dangerous stronglink on the structure operation in event of default. Solutions exist and are presented in thestudy. Lastly, the implementation of a semi-industrial of three-phase converter using interphasestransformers is performed. This inverter has been desinging to be use on a three-phaseavionics inverter network with rebuilding of neutral in case of unbalancing. Experimentalresults show the advantage of an interleaved converter compared with a conventional solution.

Une nouvelle chaîne de traction dédiée à un véhicule hybride électrique de poids lourds a été développée dans ces travaux de recherche. A ce stade, la conception et l'optimisation des composants électriques de la chaîne de traction ont été étudiées, notamment les machines synchrones à aimants permanents et les onduleurs de tension associés, ainsi que le train Ravigneaux. En ce qui concerne la conception, un modèle analytique a été créé et qui permet de répondre au cahier des charges simultanément. Les différentes contraintes multiphysiques ont été prises en compte dans le modèle analytique. Ensuite, un modèle numérique via la méthode élément fini a été mise en œuvre. Le modèle numérique nous a permis de valider les performances de la machine électrique. En ce qui concerne l'optimisation, une stratégie de l'optimisation globale a été étudiée. Un exemple d'optimisation a été basé sur un système composé par deux machines électriques et deux onduleurs associés, ainsi que le train Ravigneaux. La comparaison basée sur cet exemple pour l'optimisation locale et globale nous a permis de valider l'avantage de la stratégie de l'optimisation globale. L'expérimentation a été réalisée sur un banc d'essais qui est constitué par la machine prototype et la machine de charge, les deux machines électriques ont été alimentées et pilotées par deux variateurs de fréquence. Les résultats expérimentaux nous ont permis de valider les modèles théoriques. / A new powertrain for a hybrid electric vehicle of heavy duty was developed in this research work. In this case, the design and the optimization of electrical components of powertrain have been investigated involving the permanent magnet synchronous machines, the associated inverters and the Ravigneaux train. Regarding the design, an analytical model was created and that permits simultaneously answering to specification. The various multiphysic constraints have been taken into account in analytical model. And then the numerical model was carried out via finite element method has been implemented. The numerical model allowed us to valid electrical machine performances. Regarding the optimization, a global optimization strategy was investigated. An optimization example was based on a system which was composed of two electrical machines, two associated inverters and the Ravigneaux train; The comparison based on this example between the local optimization and the global optimization, which allowed us to valid the advantage of global optimization strategy. The experimentation has been performed with a test bench involving the prototype machine and the load machine, the two electrical machines were fed and controlled by two frequency drives. The experimental results permit to valid the theoretical models.

Les travaux développés durant cette thèse concernent la détection et l'identification des défauts simples et multiples d'ouverture des transistors dans un convertisseur statique associé à une machine asynchrone. Pour aborder cette problématique, nous avons commencé par l'analyse des potentialités, des faiblesses et des incertitudes des techniques qui ont initiés notre démarche. Ensuite, nous avons présenté deux méthodologies permettant d'analyser les performances du moteur asynchrone en présence des défauts dans une ou plusieurs cellules de commutation. Cette étude préliminaire nous a permis ainsi de proposer deux nouvelles stratégies de diagnostic sans référence basées sur l'approche signal. Les signaux électriques (courants ou tensions) disponibles à la sortie du convertisseur statique sont utilisés pour alimenter le processus de diagnostic. La première stratégie retenue est basée sur l'analyse qualitative des tensions de sortie entre phases du convertisseur et des signaux de commande appliqués aux transistors pendant les instants de commutation. Grâce à une représentation instantanée de ces grandeurs, à l'échelle de la période de découpage, nous avons pu mettre en évidence des caractéristiques favorables à la détection des défauts simples et multiples d'ouverture des transistors. L'implémentation pratique de cette première approche a été réalisée au moyen d'une technologie analogique permettant ainsi de minimiser le temps de retard à la détection jusqu'à quelques dizaines de microsecondes. / The main goal of this thesis concerns the detection and identification of simple and multiple open-circuit faults in voltage source inverters (VSIs)-fed induction motor drives. In first step, the potentialities, the weaknesses as well as the uncertainties of the previously published works have been discussed. The second step was dedicated to the study of the inverter faults impact on the induction motor. For this purpose, we have proposed two methodologies permitting the characterization of the electromagnetic torque behaviour as well as the electric variables of the induction motor under the open- and short-circuit faults. These preliminary studies allowed to propose two novel signal-based approaches for open-circuit fault diagnosis in voltage source inverter. The measured outputs inverter voltages and currents have been used as the input quantities for the fault detection and identification (FDI) process. The first approach consists in analyzing the pulse-width modulation (PWM) switching signals and the line-to-line voltage levels during the switching times, under both healthy and faulty operating conditions. For this purpose, we have adopted an instantaneous representation of these variables, which permits their analysis over one switching period. The fault diagnosis scheme is achieved using simple analog device. This circuit allows an accurate single and multiple faults diagnosis, and a minimization of the fault detection time which becomes about a few tens of microseconds.