Som små varelser har de landat i och kring det gamla Landsarkivet iLund. Deras nätta fötter är förankrade i tyngden av teglet, och derasnärvaro vittnar om ett nytt kapitel, både för arkivet och detlitterära Lund. Landsarkivet, med sina tre byggnader från 1903 och 1971 utgör grundenför mitt Examensarbete . Ett arbete som undersöker hur man förhållersig till det byggda, hur man anpassar en specifik byggnad till en ny funktion och om vad ett nytt Litteraturhus i Lund  skulle kunna vara. / Like small creatures, they have landed in and around the old County Archives in Lund. Their dainty feet are rooted in the weight of the existing bricks, and their presence is indicative of a new chapter both for the archive and the city of Lund with it´s history of literature. The Archives, with its three buildings from 1903 and 1971 are the basis of my thesis.  A work that examines how to relate to the built environment, how to adapt a specific building to a new public program and what a new House of Literature in Lund could be.

Examensarbetet utgörs av en sammanfattning av tre genomförda nybyggnadsprojekt. Foton, ritningar och skisser visar hur arkitektoniska koncept omsatts från vision till verklighet. Gemensamt för projekten är att målbilden varit inriktad på nytta, identitet och mervärde.   Kanal 5 i Stockholm är en mindre glasbyggnad som blivit en symbol för omvandlingen av ett helt innerstadskvarter, där verksamheterna ändrats från industri och hantverk till arbetsplats för idéprojekt och mediaproduktion. Byggnaden fungerar som huvudentré till äldre lokaler som renoverats. Stadsutveckling. Kommunikation. Landmärke.   Canon i Solna är ett medelstort kontorshus som i sitt utförande förenar en värdeneutral prefabriceringsestetik med det globala hightech-företagets krav på attraktiv arbetsmiljö, representativitet och profilering. Kontakt, öppenhet och överblick präglar byggnadens inre organisation. Effektivitet. Varumärke. Gränssnitt.   Swedbank Stadion i Malmö är resultatet av en hel regions långsiktiga uppslutning kring det lokala fotbollslaget, Malmö FF. Ett renodlat fotbollsstadion, en teaterscen för utpräglad fankultur, en intäktsmaskin för klubben i dess strävan mot etablering i det internationella finrummet. Interaktivitet. Historia. Intäkter. / The thesis consists of a summary of three completed projects. Photographs, drawings and sketches demonstrate how architectural concepts have been carried through into real buildings. Common to these projects is the clear focus on utility, identity and added value.   Kanal 5 in Stockholm is a small glass building. It has become a symbol of the transformation of an entire city block, where operations have changed from industry and crafts to work on conceptual content and media production. The building serves as the main entrance to the older renovated premises. Urban development. Communications. Landmark.   Canon in Solna is a medium-sized office building. Its design combines the anonymous aesthetics of prefabrication with the global high-tech company's requirement for an attractive working environment, hospitality and profiling. Connection, transparency and visibility characterize the building's interior organization. Efficiency. Branding. Interface.   Swedbank Stadion in Malmö is the result of an entire region's long-term commitment to the local football team, Malmö FF. A genuine football stadium, a theatre for a devoted fan culture, a cash machine for the club in its ambition to establish itself in the international community. Interactivity. History. Revenue.

Ett flerbostadshus med lägenheter och kommersiella ytor ovanför norra ingången till Stadshagens tunnelbanestation, Kungsholmen, Stockholm, Sverige. I förslaget undersöker jag bostäder med gemensamma inglasade söndervända loftgångar, och ett modulärt rums system. Detta för att göra lägenheternas bostadsaria anpassningsbar efter de boendes behov, och främja andrahandsuthyrning. Förslaget undersöker också olika alternativ för gatufasadens utförande, med målet att utforma en organisk fasad med prefabricerade byggnadselement. Målet i arbetet har varit att följa svensk standard och programmet som exploateringskontoret i Stockholm tagit fram för tomten i samband med markanvisningen som föreskriver utrymme för kontor och handel, samt nedgången till tunnelbanan och en passage till Stadshagsparken. / A new urban building with combined residential and commercial spaces above the north entrance to Stadshagens underground station, Kungsholmen, Stockholm, Sweden. In the proposal I explore residential flats with a modular room system and gangway entrances (loftgångar) combined with glazed balcony’s on the south facing facade. Thus enabling adaptable living arias that can be altered after the individual residents needs. The proposal also explores design alternatives for the buildings street facade, aiming at creating a organic facade within a system of prefabricated building components. The proposal also aims to comply with Swedish building standards and the building program for the assigned plot given by the city of Stockholm, incorporating office and retail spaces with the entrance to the underground station and a passageway to the adjacent Stadshagsparken.

Cirkus Cirkörs gymnasieskola blir en ny publikvänlig byggnad, men en öppen passage för att få inblick i verksamheten och väcka nyfikenhet. Men relativt små medel omvandlas Cirkushallen till den givna huvudbyggnaden i området, och blir ett tydligt dragplåster för hela kulturbyn i Alby industriområde, med Subtopia, Kulturskolan, Filmbasen mm. För det utomstående är cirkus en lek. För den som tränar är det på fullaste allvar. Detta speglas i byggnadens utformning, då det öppna publika kontrasterar mot den stängda fokuserade träningen. En passage som gör byggnaden tillgänglig från två håll och utgör hjärtat i gymnasiets verksamheter. Här möts alla som tar byggnaden i anspråk.

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Im Rahmen der vorliegenden Arbeit wurde die Entwicklung von Forellen Retina Ganglienzellen untersucht. Dabei wurde die Fähigkeit der Zellen Aktionspotentiale zu generieren betrachtet. Es konnte festgestellt werden, dass die Anzahl der Aktionspotentiale im Rahmen der Reifung stieg und gleichzeitig ihre Dauer sank. Bei der Ermittlung der passiven elektrischen Membraneigenschaften wurde keine signifikante Erhöhung der Zellgröße mit steigendem Entwicklungsstadium festgestellt. Jedoch zeigte sich eine altersabhängige Steigerung des Membranpotentials. Im nächsten Schritt wurden zugrunde liegenden Summenströme der RGZ charakterisiert. Dabei konnte keine Veränderung des Natriumeinstroms festgestellt werden. Beim Summenausstrom wurde eine signifikante Veränderung des Strommusters ab dem Zeitpunkt des Schlüpfens festgestellt. Durch den Einsatz von spezifischen Blockern konnten Kaliumkanäle aus der Bk und Shaw Familie erstmals zum Zeitpunkt des Schlüpfens nachgewiesen werden, die in adulten RGZ den größten Anteil des Summenausstromes tragen. Die Zuordnung der Summenausströme der frühen Entwicklungsstadien zu einem bestimmten Kanal konnte bis zum Ende dieser Arbeit nicht erreicht werden.Im Rahmen der heterologen Expression eines Forellen Kv3.1 Kanals in Sf21 Zellen konnte eine hohe Sensitivität gegenüber dem Blocker Chinin festgestellt werden. Neben der Blockierung von Kaliumkanälen Blocker, wurde eine weitere Methode untersucht. Dabei zeigte sich, das spezifische Antikörper eine vergleichbare Hemmung des Stromes erreichen wie klassische Blocker.Neben den elektrophysiologischen Methoden zum Nachweis von spezifischen Kaliumkanälen wurde in einem weiterführenden Schritt die Expression von 4 Shaker und 2 Shaw Kanälen mit Hilfe der Einzelzell RT-PCR Technik nachgewiesen. Dabei stimmten die Ergebnisse mit denen der elektrophysiologischen Experimente überein.Für weiterführende Untersuchungen wurde schließlich eine Methode zur Zellkultivierung von Forellen RGZ entwickelt.

The electric power system is undergoing a paradigm change on how electric energy is generated, transmitted, and delivered. Power electronics systems which can provide medium-voltage (MV) to high-voltage (HV) output (>13.8 kV ac, > 20 kV dc) with much faster dynamic response (> 10 kHz bandwidth) or high switching-frequency will enable new electronic energy network architectures, like MVDC power delivery, underground solid-state power substation (SSPS), and high-density power electronics building block (PEBB); help drive the levelized cost of electricity (LCOE) of renewable energy on par with conventional power generation; deliver precise and clean power to loads like high-speed electric motors; push the future power system toward 100% renewable energy and energy storage supplied. In the MV to HV area, the power conversion solution is dominated by silicon devices, like SCR, IGCT, and IGBT, which are slow in nature, posing significant switching losses and bulky auxiliary components like turn-on snubbers. Devices in series are required to reach higher voltage. High-frequency HV converter in two-level or three-level bridges running 20 kHz or higher in many emerging applications, like MVDC networks with high-frequency transformers and energy storage integration is hard to be built by silicon solutions. The emerging HV wide-bandgap (WBG) power semiconductors, e.g., 10 kV SiC MOSFETs offer higher blocking capability, faster and more efficient switching performances. This makes the high-frequency power conversion technology feasible for the MV area. To build a MV high-frequency power converter with high-power density, 10 kV SiC MOSFETs in series are required to reach >10 kV operation dc voltage as the single device rating is still limited by the semiconductor process and packaging capability. However, the knowledge of dynamic voltage sharing of high-speed HV SiC devices under high dv/dt rate and effective balancing methods are not fully explored. Both the voltage imbalance and the robust device voltage balancing control are not studied clearly in the existing literature. This dissertation evaluates the voltage imbalance of series-connected 10 kV SiC MOSFETs thoroughly. The parasitic capacitors connected with device terminals are found to be a unique factor for the voltage imbalance of series-connected SiC MOSFETs, which have a significant impact on the dv/dt of different devices based on the detailed analysis. The unbalanced dv/dt and the gate signal mismatch together result in the voltage imbalance of series-connected SiC MOSFETs and a set of new voltage balancing control methods are proposed. Passive capacitor compensation and closed-loop short pulse gate signal control are proposed to solve the voltage imbalance caused by the unbalanced dv/dt. Closed-loop gate delay time control is proposed to solve the voltage imbalance caused by the gate signal mismatch. Two gate driver prototypes are designed and verified for the proposed voltage balancing control methods. As the number of devices increases, the voltage balancing methods under the device-level will be complex and risky to coordinate. Therefore, the converter-level device voltage balancing methods are desired when over three devices are in stack. Therefore, this dissertation proposes to use the 3-level (3L) neutral-point-clamped (NPC) converter structure as a converter-level approach to simplify the voltage balancing control of series-connected SiC MOSFETs. A new modulation strategy is proposed to control the loss of clamping diodes, so compact MV SiC Schottky diodes can be selected to reduce the impact of extra components on the power density. Compared to the phase-leg with direct series-connected SiC MOSFETs, the phase-leg designed with the converter-level approach achieves similar power density, easier voltage balancing control, and better efficiency, which is attractive for both two and four devices in series connection. Finally, this dissertation studies the impact of series-connected 10 kV SiC MOSFETs on MV phase-leg volume reduction with the example of multi-level flying capacitor (FC) converters. The relation between the capacitances of FCs and the device voltage is studied and a new design procedure for FCs is developed to achieve minimum FC energy and regulate the maximum device voltage. With the design procedure, the total FC volumes of a 22 kV 5-level FC converter and a 22 kV 3-level FC converter with series-connected 10 kV SiC MOSFETs are calculated and compared. Series-connected 10 kV SiC MOSFETs are found to help significantly reduce the total FC volume (> 85 %). In summary, this dissertation demonstrates that the direct series connection of 10 kV SiC MOSFETs is a reliable solution for the MV converter design, and the converter-level approach is a better voltage balancing control method. This dissertation also presents a quantitative analysis of the volume reduction enabled by the series-connected 10 kV SiC MOSFETs in MV converter phase-leg design. / Doctor of Philosophy / Emerging industrial applications require medium voltage (MV) power converters. For existing MV converter solutions with Si IGBT, complex system structures are usually required, which affects the efficiency, power density, and cost of the system. For the design of MV converter, the recent 10 kV SiC MOSFET has the promising potential to improve efficiency and power density by adopting a simpler topology and fewer conversion stages. New design challenges also emerge with the new 10 kV SiC MOSFETs and one of them is the device voltage control during the operation. This dissertation mainly focuses on the voltage balancing control of series-connected 10 SiC MOSFETs, which is an attractive solution to build the MV converter phase-leg in a simple structure. Several voltage balance control methods are proposed and compared in this dissertation, which helps justify that the series-connected SiC MOSFET is a reliable approach for the MV converter design. In addition, this dissertation also analyzes the volume reduction enabled by the series-connected SiC MOSFETs with the example of a multi-level flying capacitor converter in dc-ac applications.

In recent years, there is a clear trend toward increasing the demand for electric power in high-power applications. High-power converters are making major impacts on these high-power applications. Recent breakthroughs in Silicon Carbide (SiC) materials and fabrication techniques have led to the development of high-voltage, high-frequency power devices, which are at the heart of high-power converters. SiC metal-oxide semiconductor field-effect transistors (MOSFETs) have advantages over silicon (Si) devices due to their higher breakdown voltage, higher thermal capability, and lower on-state resistance. However, their fast switching frequency and high blocking voltage bring challenges to the gate-drive circuit design. The gate driver of SiC-MOSFETs requires a power supply that provides a high-voltage, high-density design, a low input-output capacitance (CI/O) transformer design, good voltage regulation, as well as good resilience to faults to enable safe and fast operation. In this thesis, a power supply that supplies multiple gate drivers for 10 kV SiC MOSFETs is presented. A transformer design approach with a single turn at the primary side is proposed. A 20 kV insulation is achieved by the primary HV cable insulation across a toroid transformer core. The CI/O is designed less than 2 pF to mitigate the Common-Mode (CM) noise. A circuit topology analysis is performed and the inductor/capacitor/capacitor/inductor (LCCL) – inductor/capacitor (LC) circuit is selected. This circuit allows Zero-Voltage Switching (ZVS) at full operation range. A Resonant-Current-Bus (RCB) is built at the transformer primary side to achieve load-independence. / Master of Science / Wide-bandgap semiconductor devices have attracted widespread attention due to their superior performance compared to their silicon devices counterpart. To utilize its full benefits, this thesis presents a complete design and optimization of a gate-drive power supply that supplies multiple gate drivers for high-voltage, high-speed semiconductor devices. Four objectives, including high density at high voltage, good noise mitigation, fair voltage regulation, resilience to faults have been achieved. During the design procedure, different topology candidates are introduced and compared, after which a resonant topology is selected. The wide-bandgap semiconductor devices are utilized to reduce the size and losses. Hardware assembly is shown and experimental testing results are provided in the end to verify the design.

INTRODUÇÃO: O bócio é um termo genérico usado para descrever o aumento no volume da glândula tireoide que pode estar associado à formação de múltiplos nódulos, o chamado bócio multinodular. Camundongos transgênicos tireoide específicos com depleção do Pten ou aumento de expressão do Dream, dois importantes genes que têm sido implicados nas vias de sinalização das células foliculares, apresentam desenvolvimento de bócio. Em humanos, uma larga porcentagem de pacientes com doença de Cowden apresentam bócio ou outras anormalidades tireoidianas associadas a mutações germinativas no PTEN. OBJETIVO: O objetivo desse estudo foi investigar a expressão dos genes PTEN e DREAM em tecido hiperplásico tireoidiano, bem como mutações germinativas e somáticas no PTEN e mutações somáticas no DREAM, em pacientes portadores de bócio multinodular, com a finalidade de avaliar o papel destes genes na etiologia do bócio. MÉTODOS: Foram investigados 60 pacientes com bócio multinodular (54 mulheres). A extração do DNA genômico foi realizada a partir de tecido hiperplásico da tireoide e do sangue periférico dos pacientes enquanto o RNA foi obtido apenas do tecido glandular. A quantificação relativa do RNA mensageiro do PTEN e do DREAM foi avaliada pelo método de 2-??Ct utilizando o GAPDH como normalizador em dados produzidos pela PCR em tempo real. A alta e a baixa expressão de PTEN e DREAM foram definidas, respectivamente, por valores de quantificação superiores a 2.0 e inferiores a 0.5 em comparação a um pool comercial de RNA de tireoide normal de humanos. Análise de mutação foi realizada por amplificação da região codificante dos genes PTEN e DREAM pela PCR convencional seguida por sequenciamento automático (RQ = quantificação relativa; x? = média e DP = desvio padrão). RESULTADOS: Foi observada alta expressão do PTEN em 58,3% dos pacientes portadores de bócio (x RQ = 3,81; DP = 2,26) enquanto apenas dois casos apresentaram baixa expressão (x? RQ = 0,34; DP= 0,09). Nos 38,3% casos restantes foi observada expressão normal de PTEN (x? RQ = 1,35; DP = 0,35). Em relação ao gene DREAM, alta e baixa expressão foram observadas em 33,3% (x RQ = 6,07; DP = 5,02) e 15,0% (x RQ = 0,30; DP = 0,10) dos pacientes com bócio respectivamente, enquanto pouco mais da metade dos casos (51,6%) teve expressão normal RQ = 1,12 ; DP = 0,40). A Análise de mutações do PTEN e do DREAM revelaram apenas polimorfismos intrônicos, previamente descritos no banco de dados do NCBI, tanto nos DNA de sangue e/ou de tecido hiperplásico. CONCLUSÕES: Nossos resultados demonstraram uma expressão aumentada de PTEN em bócio multinodular, sugerindo que este pode estar hiperexpresso, ou pelo menos tem sua expressão mantida, nesta hiperplasia benigna da tireoide. Alterações na sequência gênica codificante do PTEN não foram observadas. Na análise mutacional e de expressão do DREAM não foram encontradas alterações que pudessem ser relacionadas à patogênese de bócio em humanos / BACKGROUND: Multinodular goiter is a clinicopathological entity characterized by an increased volume of the thyroid gland with formation of nodules. A high proliferative status of thyroid follicular cells and goiter were observed in mutants mice with specifically deleted Pten or Dream overexpression in thyrocytes. In humans, a large percentage of patients with Cowden disease have goiters or other thyroid abnormalities associated with germ-line PTEN mutations. OBJECTIVE: The aim of this study was to investigate the tissue expression of PTEN and DREAM, as well as germ-line and somatic PTEN mutations and somatic DREAM mutations, in patients with multinodular goiter to evaluated the role of these genes in goitrogenesis. METHODS: We investigated 60 multinodular goiter patients (54 females). Genomic DNA was extracted from both patients\' hyperplastic thyroid tissue and peripheral blood whereas RNA was obtained only from glandular tissue. Relative quantification of PTEN and DREAM messenger RNA was evaluated using 2-Ct method normalized to GAPDH expression on data produced by real-time PCR. PTEN and DREAM over and lower expression were respectively defined by value > 2.0-fold and < 0.5-fold relative to a commercial pool of normal human thyroid RNA. Mutations analyses were performed by amplification of PTEN and DREAM coding region by PCR followed by automatic sequencing. RQ = relative quantification; x = average; SD = standard deviation. RESULTS: We observed a high expression of PTEN in 58.3% of multinodular goiter patients (RQ x = 3.81; SD = 2.26) and only two cases with lower expression (RQ x = 0.34; SD = 0.09). In the remaining 38.3% of patients expression of PTEN was normal (RQ x = 1.35; SD = 0.35). For the DREAM, over and lower expression were observed in 33.3% (RQ x = 6.07; SD = 5.02) and 15.0% (RQ x = 0.30; SD = 0.10) of patients respectively, whereas 51.6% had normal expression (RQ x = 1.12; SD = 0.40). Regarding PTEN and DREAM mutations analysis, only previously described intronic polymorphisms were observed in DNA from blood and/or thyroid hyperplastic tissue. CONCLUSIONS: Our results demonstrated that PTEN expression is higher in multinodular goiter suggesting that this gene is overregulated (or at least has its expression maintained) in this benign hyperplastic thyroid lesions. No evidence for the involvement of DREAM in goitrogenesis was observed in our cohort of multinodular goiter patients