A presente dissertação tem a preocupação de demonstrar a relevância não só psicológica como também social da adoção tardia mergulhando em temas como o abandono familiar, a falta de perspectivas e de planos futuros que isso acarreta. É desconhecida em pesquisas a abordagem do tema adoção tardia, mas pela visão do contexto social capitalista em que a sociedade está inserida nos levou a supor sob a ótica marxista que o modelo capitalista seja fator causador do abandono de crianças. A proposta dessa dissertação é analisar o programa social denominado UM LAR PARA MIM, desenvolvido e aplicado através da Lei Estadual numero 3.499 de 08 de dezembro de 2000, pelo Governo do Estado do Rio de Janeiro. Este instrumento legal, através de incentivos, possibilita aos servidores estaduais adotarem crianças com mais de cinco anos de idade, dando-lhes a oportunidade de terem uma família, um lar e perspectivas de futuro. O objetivo geral foi o de realizar um estudo empírico acerca da adoção tardia, a partir de uma abordagem histórica sociológica, tendo como exemplo de fato e de direito a política pública adotada no Estado do Rio de Janeiro e analisar a eficácia do Programa e seu impacto na sociedade carioca. O que o estudo da discussão sobre a adoção tardia nos revelou é que a maioria dos autores aborda-o sob uma perspectiva psicológica. / This dissertation is concerned to demonstrate the relevance not only psychological but also social diving in the late adoption issues such as family abandonment, lack of prospects and future plans that entails. It is unknown in the research approach to the subject late adoption, but the vision of the social context in which capitalist society is part led us to assume the perspective of Marxism, according to which the capitalist model is the factor causing the abandonment of children. The purpose of this paper is to analyze the social program called A HOME FOR ME, undertaken by the State Law number 3499 of 08 December 2000, the State Government of Rio de Janeiro. This legal instrument, through incentives, allows state officials to adopt children over the age of five, giving them the opportunity to have a family, a home and future prospects. The overall objective was to perform an empirical study about the late adoption, from a historical sociological approach, taking as an example of fact and law, public policy adopted in the State of Rio de Janeiro and analyze the effectiveness of the program and its impact in Rio society. What the study's discussion of late adoption is revealed that most authors address it in a psychological perspective.

A presente dissertação tem a preocupação de demonstrar a relevância não só psicológica como também social da adoção tardia mergulhando em temas como o abandono familiar, a falta de perspectivas e de planos futuros que isso acarreta. É desconhecida em pesquisas a abordagem do tema adoção tardia, mas pela visão do contexto social capitalista em que a sociedade está inserida nos levou a supor sob a ótica marxista que o modelo capitalista seja fator causador do abandono de crianças. A proposta dessa dissertação é analisar o programa social denominado UM LAR PARA MIM, desenvolvido e aplicado através da Lei Estadual numero 3.499 de 08 de dezembro de 2000, pelo Governo do Estado do Rio de Janeiro. Este instrumento legal, através de incentivos, possibilita aos servidores estaduais adotarem crianças com mais de cinco anos de idade, dando-lhes a oportunidade de terem uma família, um lar e perspectivas de futuro. O objetivo geral foi o de realizar um estudo empírico acerca da adoção tardia, a partir de uma abordagem histórica sociológica, tendo como exemplo de fato e de direito a política pública adotada no Estado do Rio de Janeiro e analisar a eficácia do Programa e seu impacto na sociedade carioca. O que o estudo da discussão sobre a adoção tardia nos revelou é que a maioria dos autores aborda-o sob uma perspectiva psicológica. / This dissertation is concerned to demonstrate the relevance not only psychological but also social diving in the late adoption issues such as family abandonment, lack of prospects and future plans that entails. It is unknown in the research approach to the subject late adoption, but the vision of the social context in which capitalist society is part led us to assume the perspective of Marxism, according to which the capitalist model is the factor causing the abandonment of children. The purpose of this paper is to analyze the social program called A HOME FOR ME, undertaken by the State Law number 3499 of 08 December 2000, the State Government of Rio de Janeiro. This legal instrument, through incentives, allows state officials to adopt children over the age of five, giving them the opportunity to have a family, a home and future prospects. The overall objective was to perform an empirical study about the late adoption, from a historical sociological approach, taking as an example of fact and law, public policy adopted in the State of Rio de Janeiro and analyze the effectiveness of the program and its impact in Rio society. What the study's discussion of late adoption is revealed that most authors address it in a psychological perspective.

Ce travail s'inscrit dans le cadre d'un programme de collaboration entre l'Université Libanaise et l'université de Rennes 1. La thèse est divisée en deux parties :Chimie du fluor : synthèse de nouveaux hétérocycles portant des chaînes latérales fluorées ; chimie médicinale : recherche de nouvelles molécules à visées anticancéreuses. La première partie se compose de trois chapitres : dans le premier chapitre, des intermédiaires de synthèse de type énones fluorées ont été synthétisés par une voie originale, et leur réactivité en cyclocondensation a été étudiée pour obtenir de pyrazolines et de pyrrolines avec des chaînes latérales fluorés. Dans le deuxième chapitre, nous nous sommes intéressés à la préparation d'hétérocycles de type chroman-4-one, en utilisant les intermédiaires difluorés précédents. Dans le dernier chapitre, la réaction de Kinugasa a été appliquée pour la première fois sur des dérivés propargyliques gem-difluorés. Cette réaction nous a permis de découvrir une voie de synthèse originale à une famille de composés nouveaux, à savoir des exoalkylidène b-lactames portant un fluor en position vinylique. Dans la seconde partie, notre objectif était de restaurer les propriétés apoptotiques au sein des cellules cancéreuses afin d'obtenir de nouveaux composés à activité antitumorale. A partir de données obtenues par modélisation moléculaire, nous avons fait le design de plusieurs séries d'analogues d'un inhibiteur connu (MIM-1) de la protéine anti-apoptotique Mcl-1. Plus de 40 analogues ont été préparés et testés sur trois variétés de cellules cancéreuses (sein, ovaire et mélanome). Un certain nombre de ces composés ont présenté des activités prometteuses dans ces différents domaines. / This work is a part of a collaboration program between Lebanese University and University of Rennes 1. The thesis is divided into two parts: fluorine chemistryv : synthesis of new heterocycles bearing fluorine-containing side chains ; medicinal chemistry : research towards new anticancer molecules. The first part consists of three chapters: in the first chapter, gem-difluoro enone-type intermediates were synthesized through a new route and their cyclocondensation reactions were studied to get pyrazolines and pyrrolines with fluorinated side chains. In the second chapter, type-chroman-4-one heterocycles were prepared using the previous difluorinated intermediates. In the third chapter, the Kinugasa reaction was applied for the first time on gem-difluoro propargylic derivatives. This reaction has allowed us to discover a pathway to a new family of molecules, the fluorine-containing exoalkylidene β-lactames. In the second part, our goal was to reinduce the proapoptotic properties in cancer cells in order to obtain new antitumor compounds. Starting from data obtained through molecular modeling studies, we designed and prepared several series of analogs for a known inhibitor (MIM-1) of the anti-apoptotic protein Mcl-1. Over 40 analogs have been synthetized and screened towards three types of cancer cells (breast, ovarian and melanoma). Some of these derivatives have demonstrated promising data in these areas.

Rapid growth in the field of communications industry has led to newer opportunities and challenges in the design of CMOS based monolithic integrated circuits. ASK modulators are a class of digital modulators which are known for their relative simplicity of implementation for low cost applications in the industrial and biomedical domains. This thesis presents a LC-based CMOS Amplitude Shift Keying (ASK) modulator scheme which demonstrates promising capability for radio frequency designs. This work describes the design and implementation of differential cross-coupled NMOS only LC power oscillator with ASK modulation to operate at 2.4 GHz frequency. In this work, 65nm CMOS process technology has been used for implementation. The work mainly focused on system parameters such as oscillation frequency, output signal power, power consumption and phase noise. The LC tank was created with a centre-tap on-chip differential spiral inductor and a Metal Insulator Metal (MIM) capacitor. The method of a current mirror with switching technique is employed for biasing the LC oscillator as well as ASK modulation output. The oscillator circuit has been optimised by using a simulation based approach to study the design and measurements to gain a greater insight into the performance of the ASK modulator. An output signal power of -1.59dBm at 2.30 GHz with a phase noise of -115.39dBc/Hz@1MHz and a power consumption of 5.92mW has been achieved at the layout level. Optimal ASK modulated output performance has been obtained for the data rate of up to around 40Mbits/s. In this thesis, simulation results have been presented for both the schematic and the layout levels.

The ever increasing advancements in semiconductor technology and continuous scaling of CMOS devices mandate the need for new dielectric materials with low-k values. The interconnect delay can be reduced not only by the resistance of the conductor but also by decreasing the capacitance of dielectric layer. Also cross-talk is a major issue faced by semiconductor industry due to high value of k of the inter-dielectric layer (IDL) in a multilevel wiring scheme in Si ultra large scale integrated circuit (ULSI) devices. In order to reduce the time delay, it is necessary to introduce a wiring metal with low resistivity and a high quality insulating film with a low dielectric constant which leads to a reduction of the wiring capacitance. Boron carbon nitride (BCN) films are prepared by reactive magnetron sputtering from a B4C target and deposited to make metal-insulator-metal (MIM) sandwich structures using aluminum as the top and bottom electrodes. BCN films are deposited at various N2/Ar gas flow ratios, substrate temperatures and process pressures. The electrical characterization of the MIM devices includes capacitance vs. voltage (C-V), current vs voltage, and breakdown voltage characteristics. The above characterizations are performed as a function of deposition parameters.

Integration of high-K Metal-Insulator-Metal (MIM) capacitors in the Back-end-of-line (BEOL) is a topic of interest for the further development of the process at KTH Royal Institute of Technology. MIM-capacitors benefit from having constant capacitance values over a range of voltages and/or frequencies. One significant limitation in the development of better MIM-capacitors is the temperature consideration for BEOL processes. For the process at KTH Institute of Technology the temperature should not exceed 600 °C, as this would damage underlying devices. This work aims to fabricate aluminium oxide MIM-capacitors as a standard BEOL process performed at low temperature, which has been achieved via atomic layer deposition (ALD). The fabricated aluminium oxide MIM-capacitors had a good quality factor, series resistance and low dissipation. The capacitance for a 10 nm thick aluminium oxide insulator layer was 1 µF/cm2, which exceeds the set requirement. This work also aimed to make ferroelectric aluminium doped hafnium oxide MIM-capacitors using ALD. The doping ratio was varied in ALD as this had been found to affect formation of the ferroelectric crystal phase after a rapid thermal annealing step. Three wafers of 20 nm thick hafnium oxide and differing ratios were found to not be ferroelectric. The intermediate doping ratio was found to appear slightly anti-ferroelectric. A 10 nm thick doped hafnium oxide of intermediate doping was also fabricated and was found to be ferroelectric with a remnant polarisation of 1 µC/cm2. Though this polarisation is relatively small, it shows that top electrode induced strain due to lattice mismatch could be responsible for the ferroelectric properties of the capacitor. The quality of the hafnium based capacitors seemed worse in comparison to the aluminium oxide capacitors, which is suspected to be due to oxygen vacancies, resulting in a high loss tangent. While this first experiment showed promising results, the ferroelectric remnant polarisation should be increased by an order of magnitude and the electrical benchmark values should be improved before these hafnium oxide MIM-capacitors can be used in the BEOL process. / Integratie van high-K MIM-condensatoren in de Back-end-of-line (BEOL) is een onderwerp van belang voor de ontwikkeling van het proces bij de KTH. MIM-condensatoren profiteren van een constante capaciteitswaarde over een reeks spanningen en/of frequenties. Een belangrijke beperking bij de ontwikkeling van betere MIM-condensatoren is het temperatuur limiet voor BEOL-processen. Bij de KTH moet de temperatuur niet hoger zijn dan 600 °C, omdat dit de onderliggende apparaten zou beschadigen. Dit werk heeft tot doel aluminiumoxide MIM-condensatoren te fabriceren als een standaard BEOL-proces met lage temperatuur, en heeft dit inderdaad bereikt via atomaire laagafzetting (ALD). De gefabriceerde aluminiumoxide MIM-condensatoren hadden een goede kwaliteitsfactor, serieweerstand en lage dissipatie. De capaciteit voor een 10 nm dikke aluminiumoxide-isolatorlaag was 1µF/cm2, hoger dan de gestelde eisen. Dit werk was ook gericht op het maken van ferro-elektrische aluminium gedoteerde hafniumoxide MIM-condensatoren met behulp van ALD. De doteringsverhouding werd gevarieerd in ALD, aangezien bleek dat dit de vorming van de ferro-elektrische kristalfase faciliteerde na een snelle thermische gloeistap. Drie wafers van 20 nm dik hafniumoxide en verschillende verhoudingen bleken niet ferro-elektrisch te zijn. De tussenliggende doteringsverhouding bleek enigszins anti-ferro-elektrisch te zijn. Een 10 nm dik gedoteerd hafniumoxide met intermediaire dotering werd ook gefabriceerd en bleek ferro-elektrisch te zijn met een restpolarisatie van 1 µC/cm2. Hoewel deze polarisatie relatief klein is, toont het aan dat de door de topelektrode geïnduceerde spanning als gevolg van roostermismatch verantwoordelijk zou kunnen zijn voor de ferro-elektrische eigenschappen van de condensator. De kwaliteit van de op hafnium gebaseerde isolator leek slechter in vergelijking met die van aluminiumoxide, hetgeen kan worden toegeschreven aan gebrek van zuurstof in het rooster, wat in een groot verlies resulteert. De ferro-elektriciteit moet met een orde van grootte worden verhoogd en de elektrische benchmarks moeten ook verhoogd worden voordat deze hafniumoxide MIM-condensatoren kunnen worden gebruikt in het BEOLproces. Sleutelwoorden: atomaire laagafzetting (ALD), Ferro-elektrisch, Metaal-Isolator- Metaal (MIM) condensator, lage temperatuur, snelle thermische gloeiing.

L'intégration de diélectriques High-k dans les empilements de grille des dispositifs MOS a fait naître de nouvelles interrogations concernant la fiabilité des futurs nœuds technologiques. La miniaturisation constante des dispositifs conduisant à l'amincissement des épaisseurs d'oxyde de grille, leur caractérisation électrique est rendue de plus en plus complexe à l'échelle du dispositif. Pour palier à ce problème, l'utilisation d'un microscope à force atomique en mode conducteur sous ultravide permet grâce à la faible surface de contact entre la pointe et l'échantillon de réduire suffisamment le courant tunnel pour pouvoir étudier la dégradation et le claquage diélectrique d'oxyde ultra fin. La comparaison systématique des résultats de fiabilité de l'empilement High-k du nœud 28nm et de la couche interfaciale seule ayant subi les mêmes étapes de développement que celles présentes dans l'empilement, obtenus par C-AFM sous ultra vide, ont permis de montrer expérimentalement que la probabilité de claquage des oxydes de grille High-k est gouvernée par la fiabilité propre des couches qui la composent, et de déduire une loi d'extrapolation de la durée de vie en tension et en surface ce qui permet de prédire la statistique de défaillance du dispositif. Les impacts d'un pré-stress en tension de l'ordre de la milliseconde sur les distributions de claquage des oxydes de grille simples et bicouches ont été rapportés. Ces résultats sont expliqués dans ce manuscrit par le déclenchement lors de l'application du stress, d'une dégradation au sein de l'oxyde, prenant naissance dans la couche interfaciale des oxydes High-k et conduisant à une réduction locale de l'épaisseur de diélectrique. Des phénomènes de résistance différentielle négative au moment de la rupture diélectrique ont été étudiés et modélisés pour différentes épaisseurs d'oxyde, par une croissance filamentaire de la dégradation. Il a été possible de donner une expression analytique reliant le temps caractéristique de croissance filamentaire et le temps moyen de claquage observé sur les distributions statistiques. Enfin, les mesures C-AFM de ce travail ont été étendues au cas des structures MIM utilisées pour le développement des futurs mémoires résistives OxRAM. Dans ce cas un effet d'auto-guérison à l'échelle nanométrique a été mis en évidence. / Integration of High-k dielectrics in gate oxides of MOS raised new issues concerning the reliability of futur technology nodes. The constant miniaturisation of devices leads to thinner gate oxides, making their electrical caracterisation more complex at the device scale. To solve this problem, an atomic force microscope in conductive mode under ultra high vacuum can be used thanks to the readuce contact area between the tip and the sample which allow a drastic decrease of the tunneling current and thus the study of the degradation and the dielectric breakdown of ultra-thin oxides. The systematic comparaison of the TDDB distributions obtained on the High-k gate oxide of the 28nm technology node on one side and obtained on the Interfacial layer alone revealed that the failure probability of High-k oxides is governed by the failure probability of each layer present in the stack. This allow to give an extrapolation law of the High-k gate oxide lifetime as a function of the applied voltage and the electrode area and to predict the failure statistic of the 28nm tehcnology node. The impact of voltage pre-stress with a microseconde range of duration on the TDDB and VBD distributions of both single layer and High-k gate oxides is given is the manuscript. The results are then interpreted by an invasive degradation nucleating from an interface during a stress and leading to a local thinned oxide. Pre-breakdown negative differential resistance have been studied and modeled for several oxide thickness, using a growing mecanism of the elctrical degradation. An analytic expression linking the growth caracteristic time of the filament and the mean time to breakdown observed on the statistical distributions has then been given. Finally, C-AFM measurements developped in this work has been extended to MIM structures used for oxide resistive random access memories (OxRAM). A self healing has been observed at the nanometric scale for these samples.

Ces dix dernières années, les technologies de stockage non-volatile Flash ont joué un rôle majeur dans le développement des appareils électroniques mobiles et multimedia (MP3, Smartphone, clés USB, ordinateurs ultraportables…). Afin d’améliorer davantage les performances, augmenter les capacités et diminuer les coûts de fabrication, de nouvelles solutions technologiques sont aujourd’hui étudiées pour pouvoir compléter ou remplacer la technologie Flash. Citées par l’ITRS, les mémoires résistives polymères présentent des caractéristiques très prometteuses : procédés de fabrication à faible coût et possibilité d’intégration haute densité au dessus des niveaux d’interconnexions CMOS ou sur substrat souple. Ce travail de thèse a été consacré au développement et à l'étude des mémoires résistifs organiques à base de polymère de poly-méthyl-méthacrylate (PMMA) et de molécules de fullerènes (C60). Trois axes de recherche ont été menés en parallèle: le développement et la caractérisation physico-chimique de matériaux composites, l’intégration du matériau organique dans des structures de test spécifiques et la caractérisation détaillée du fonctionnement électrique des dispositifs et des performances mémoires. / Over the past decade, non-volatile Flash storage technologies have played a major role in the development of mobile electronics and multimedia (MP3, Smartphone, USB, ultraportable computers ...). To further enhance performances, increase the capacity and reduce manufacturing costs, new technological solutions are now studied to provide complementary solutions or replace Flash technology. Cited by ITRS, the polymer resistive memories present very promising characteristics: low cost processing and ability for integration at high densities above CMOS interconnections or on flexible substrate. This PhD specifically focused on the development and study of composite material made of Poly-Methyl-Methacrylate (PMMA) polymer resist doped with C60 fullerene molecules. Studies were carried out on three different axes in parallel: Composite materials development & characterization, integration of the organic material in specific test structure and advanced devices and finally detailed electrical characterization of memory cells and performances analysis.

La thèse est divisée en trois chapitres indépendants. Chimie du β-lactames : Synthèse d'α-éthylène et d'α-alkylidène-β-lactames en utilisant la réaction de Kinugasa. Chimie de l'acylsilane : application d'une réaction aldolique intramoléculaire asymétrique sur un dérivé d'acylsilane nouvellement synthétisé. - Chimie médicinale: synthèse de nouvelles molécules à but anticancéreux.Dans le premier chapitre la réaction de Kinugasa a été appliquée pour la première fois à des alcynes vrais, portant en position propargylique un groupe partant permettait d'accéder directement et en une étape aux méthylène- et alkylidene β-lactames recherchés. Dans le second chapitre, la synthèse de molécules originales possédant à la fois une fonction acylsilane et un aldéhyde en position éloignée, et l'aldolisation intramoléculaire asymétrique a été explorée. Dans le dernier chapitre, notre objectif était de restaurer les propriétés apoptotiques au sein des cellules cancéreuses afin d'obtenir de nouveaux composés à activité antitumorale. A partir de données obtenues par modélisation moléculaire, nous avons fait le design de plusieurs séries d'analogues d'un inhibiteur connu(MIM-1) de la protéine anti-apoptotique Mcl-1. Huit composés ont été synthétisés et testés pour trois types de cellules cancéreuses (sein, ovaire et le mélanome). / The thesis is divided into three chapters:- β-lactams chemistry: synthesis of α-methylene and α-alkylidene-β-lactams using the Kinugasa reaction.- Acylsilane chemistry : applying asymmetric intramolecular aldol reaction on a newly synthesized acylsilane derivatives. - Medicinal chemistry: synthesis of new molecules with anticancer aimes. In the first chapter, Kinugasa reaction was applied for the first time with an alkyne bearing a nucleofuge in propargylic position that allowed us to discover a way of synthesis of exoalkylidene β-lactams. In the second chapter, a new acylislane derivatives bearing an aldehyde functional group in a remote position of the molecule were prepared, and asymmetric intramolecular aldolization reaction was performed. In the last chapter, our goal was to reinduce the pro-apoptotic properties in cancer cells in order to obtain new antitumor compounds. Starting from data obtained through molecular modeling studies, we designed and prepared several series of analogs for a known inhibitor (MIM-1) of the anti-apoptotic protein Mcl-1. Eight compounds have been synthetized and screened towards three types of cancer cells (breast, ovarian and melanoma).

Les capacités MIM (Métal/Isolant/Métal), au coeur de cette étude, sont des composants intégrés entre les niveaux d'interconnections. Le développement de nouvelle architecture en trois dimensions impose de déposer les films ultraminces constituant la capacité MIM de manière très conforme. Ce qui conduit à utiliser un nouveau procédé de dépôt : la méthode ALD assistée par plasma ou PEALD. De plus l'augmentation des performances électriques des MIM passe par une maîtrise des propriétés des électrodes et des interfaces créées entre le diélectrique et les électrodes métalliques. Les matériaux développés dans cette étude sont Ti- N-C and W-N- C, déposés par PEALD à partir de précurseurs organométalliques TDMAT et BTBMW. Une étude sur les propriétés physico-chimiques et électriques des films est effectuée ainsi que l'intégration de ces films dans les capacités MIM.