No description available.

Photoinduced electron transfer is a fundamentally interesting process; it occurs everywhere in the natural world. Studies on electron transfer shed light on questions about the interaction between molecules and how the dynamics of these can be utilized to steer the electron transfer processes to achieve a desired goal. The goal may be to get electrons to the electrode of a solar cell, or to make the electrons form an energy rich fuel such as hydrogen, and it may also be an input or output for molecular switches. The importance of electron transfer reactions will be highlighted in this thesis, however, the main motivation is to gain a better understanding of the fundamental processes that affect the rate and direction of the electron transfer. A study of photoinduced electron transfer (ET) in a series of metallophorphyrin/bipyridinium complexes in aqueous solution provided fresh insight concerning the intimate relationship between vibrational relaxation and electron transfer. The forward electron transfer from porphyrin to bipyridinium as well as the following back electron transfer to the ground state could be observed by femtosecond transient absorption spectroscopy. Both the reactant and the product states of the ET processes were vibrationally unrelaxed, in contrary to what is assumed for most expressions of the ET rates. This could be understood from the observation of unrelaxed ground states. The excess energy given by the initial excitation of the porphyrin does not relax completely during the two steps of electron transfer. This is an unusual observation, not reported in the literature prior the studies presented in this thesis. This study also gave the first clear evidence of electronically excited radical pairs formed as products of intramolecular electron transfer. Signs of electronically excited radical pairs were seen in transient spectra, and were further verified by the observation that the rates followed a Marcus normal region behavior for all excitation wavelengths, despite the relatively large excess energy of the second excited state. This thesis also concerns electron transfer in solar cell dyes and mixed valence complexes. In the ruthenium polypyridyl complex Ru(dcb)2(NCS)2, where dcb = 4,4’-dicarboxy-2,2’-bipyridine, inter-ligand electron transfer (ILET) in the 3MLCT state was followed by means of femtosecond transient absorption anisotropy that was probed in the mid-IR region. Unexpectedly, ILET was not observed because electron density was localized on the same bpy during the time-window allowed by the rotational lifetime.

La corrélation électronique dans une molécule est une des difficultés principales du problème à N corps. Un moyen d'exalter des effets multiélectroniques est l'utilisation de rayonnements de l'extrême ultra-violet (UVX) pour photo-ioniser des électrons de valences internes de systèmes poly-atomiques complexes. Les états cationiques ainsi créés résultent d'excitations d'ordre supérieur (de type « 2-hole 1-particle ») et leur dynamiques subséquentes mènent à des considérations en dehors du cadre de l'approximation de Born-Oppenheimer. Les développements récents en matière de sources d'impulsions UVX ultracourtes, notamment produites par génération d'harmoniques d'ordres élevés (HHG), permettent d'étudier ces mécanismes sur des échelles de temps de temps allant de quelques centaines de femtoseconde (1 fs = 10-15 s) jusqu'à l'attoseconde (1 as = 10-18 s).Lors de cette thèse, j'ai premièrement étudié la réponse statique de molécules carbonées ou biologiques à une excitation femtoseconde infrarouge (IR) multi-photonique à l'aide d'un spectromètre imageant les vecteurs vitesses des photoélectrons (VMIS). Ensuite, à travers une approche multi-échelle, j'ai exploré, dans ces systèmes complexes, les dynamiques induites par impulsions femtosecondes et attosecondes UVX. En particulier, j'ai étudié, dans les Hydrocarbures Aromatiques Polycycliques (HAPs), l'évolution des états cationiques hautement excités ainsi que l'effet du potentiel moléculaire lors du processus de photo-ionisation, grâce à un schéma de spectroscopie UVX-pompe IR-sonde couplé à un VMIS. Enfin, j'ai examiné le rôle de la dynamique ultrarapide des charges induites par une photo-ionisation UVX en rapport avec la fragmentation de la biomolécule de caféine.Les processus observés s'intègrent à une approche multi-échelle de la physique moléculaire ultra-rapide et permettent de mieux saisir l'implication des effets multiélectroniques et des couplages non-adiabatiques dans les systèmes polyatomiques complexes / Electron correlation in a molecule is one of the main difficulties of the N-bodies problem. One mean to enhance multielectronic effects is to use extreme ultraviolet light (XUV) in order to ionize inner-valence electrons of complex polyatomic systems. Thus, the produced cationic states result from a higher order photo-excitation processes (such as “2-hole, 1particle”) and their dynamics lead to considerations out of the frame of the Born-Oppenheimer approximation. Recent developments in ultrafast science concerning the XUV ultrashort pulses sources, produced by high harmonic generation (HHG), allow studying these mechanisms from the hundreds of femtoseconds (1 fs = 10-15 s) timescale up to the attosecond (1 as = 10-18 s) timescale.During this thesis I have firstly studied the static response of carboneous and biological molecules to a multi-photonic infrared (IR) femtosecond excitation thanks to a velocity map imaging spectrometer (VMIS). Then, through a multi-scale approach, I have investigated, in these complex systems, the dynamics induced by XUV femtosecond and attosecond pulses. I have especially studied, in Polycyclic Aromatic Hydrocarbons (PAHs), the evolution of highly excited cationic states and the effect of the molecular potential during the photoionization process, thanks to a XUV-pump IR-probe spectroscopy scheme coupled to a VMIS. Finally, I have examined the role of the ultrafast charge dynamics induced by XUV photo-ionization on fragmentation mechanisms in the caffeine biomolecule. The observed processes are entire part of a multi-scale approach of the ultrafast molecular physics and allow a better understanding of the implication of multielectronic effects and non-adiabatic couplings in complex polyatomic systems

L'amélioration des techniques de dépôts et l’évolution de la compréhension de la physique de la matière condensée a conduit à la découverte de phénomènes nouveaux en électronique de spin (spintronique). En particulier, le retournement de l’aimantation par couple de transfert de spin et couple spin-orbite, ainsi que le développement de dispositifs basés sur la propagation d’ondes de spin ont fait de l’amortissement magnétique de Gilbert un paramètre central pour les futures technologies de stockage et de traitement de l’information. Dans cette étude, la prédiction de valeurs très faibles d’amortissement dans les alliages d’Heusler demi métaux magnétiques Co2MnZ est expérimentalement observée et directement corrélée à la structure électronique sous-jacente. En effet, en substituant l’élément Z dans des couches minces monocristallines de haute qualité de Co2MnZ (Z= Al, Si, Ga, Ge, Sn, Sb) faites par épitaxie par jet moléculaire, les propriétés électroniques telles que le gap de spin minoritaire, la position du niveau de Fermi et la polarisation en spin peuvent être accordées et leurs conséquences sur la dynamique de l’aimantation sont analysées. Les résultats expérimentaux nous permettent de comprendre la relation existante entre la structure électronique mesurée et la valeur d’amortissement magnétique, ainsi que de les comparer aux calculs ab initio. Les valeurs d’amortissement entre 4.1 x10-4 et 9 x10-4 pour Co2MnSi, Co2MnGe, Co2MnSn et Co2MnSb sont les plus petites valeurs jamais reportées pour des couches conductrices et constituent une preuve expérimentale qui confirme les prédictions théoriques sur ces alliages d’Heusler demi métaux magnétiques. Ensuite, la relation entre l’amortissement magnétique de Gilbert et le temps de désaimantation ultra-rapide induit par pulse laser dans la série d’alliages quaternaires Co2MnSixAl1-x à polarisation en spin variable est étudiée. Cette partie vise à vérifier des modèles théoriques qui essaient d’unifier ces deux quantités vivant sur des échelles de temps différentes. Finalement, les propriétés structurales et magnétiques de super réseaux Mn3Ga/Co2YZ sont étudiées dans le but de combiner un amortissement de Gilbert très faible, un gap de spin minoritaire ainsi que l’aimantation perpendiculaire aux plans des couches, une caractéristique indispensable pour des dispositifs à faible consommation d’énergie. / Improvements in thin film elaboration methods and a deeper understanding of condensed matter physics have led to new exciting phenomena in spin electronics (spintronics). In particular, magnetization reversal by spin-orbit and spin-transfer torque as well as the development of spin waves based devices have placed the Gilbert magnetic damping coefficient as a key parameter for future data storage and information processing technologies. The prediction of ultralow magnetic damping in Co2MnZ Heusler half-metal magnets is explored in this study and the damping response is shown to be linked to the underlying electronic structure. By substitution of the Z element in high quality Co2MnZ (Z=Al, Si, Ga, Ge, Sn and Sb) epitaxial thin films grown by molecular beam epitaxy, electronic properties such as the minority-spin band gap, Fermi energy position in the band gap, and spin polarization can be tuned and the consequences for magnetization dynamics analyzed. Experimental results allow us to directly explore the interplay of spin polarization, spin gap and Fermi energy position, with the magnetic damping obtained in these films (together with predictions from ab initio calculations). The ultralow magnetic damping coefficients measured in the range from 4.1 x10-4 to 9 x10-4 for Co2MnSi, Co2MnGe, Co2MnSn and Co2MnSb are the lowest values ever reported in conductive layers and offer a clear experimental demonstration of theoretical predictions on half metal magnetic Heusler compounds. Then, the relation between the Gilbert damping and the ultrafast demagnetization time in quaternary Co2MnSixAl1-x compounds with a tunable spin polarization is analyzed. This way, it is possible to confront theoretical models unifying those two quantities that live in different timescales. Finally, structural and magnetic properties of Mn3Ga/Co2YZ Heusler superlattices are investigated in order to combine ultralow Gilbert damping coefficient, minority spin band gap and perpendicularly magnetized heterostructures, another requirement for low energy consumption devices. Through the present work, we aim to prove that Heusler compounds provide an excellent playground to study fundamental magnetism and offer a pathway for future materials design.

The vibrational wave-packet dynamics of diatomic rubidium molecules (Rb2) in triplet states formed on the surface of superfluid helium nanodroplets is investigated both experimentally and theoretically. Detailed comparison of experimental femtosecond pump–probe spectra with dissipative quantum dynamics simulations reveals that vibrational relaxation is the main source of dephasing. The rate constant for vibrational relaxation in the first excited triplet state 13Σ+g is found to be constant γ ≈ 0.5 ns−1 for the lowest vibrational levels v [less, similar] 15 and to increase sharply when exciting to higher energies. / Dieser Beitrag ist mit Zustimmung des Rechteinhabers aufgrund einer (DFG-geförderten) Allianz- bzw. Nationallizenz frei zugänglich.

Cette thèse est dédiée à l’étude et l’exploitation des propriétés remarquables de la distribution angulaire des photoélectrons dans le référentiel moléculaire (MFPAD pour Molecular Frame Photoelectron Angular Distribution). Cette observable sensible permet de caractériser au meilleur niveau à la fois les processus de photoionisation (PI) de petites molécules, par la détermination des modules et phases relatives des éléments de matrice dipolaire, et l’état de polarisation du rayonnement ionisant, entièrement encodé dans son expression sous la forme des paramètres de Stokes (s1, s2, s3), qui constituent les deux axes du travail présenté. La mesure des MFPADs combine une technique de spectroscopie tridimensionnelle en coïncidence des vecteurs vitesse du photoélectron et du photoion issus de la même réaction de photoionisation dissociative (PID) à l’utilisation de différentes sources de lumière : le rayonnement synchrotron d’une part, sur les lignes DESIRS et PLEIADES (SOLEIL), et le rayonnement harmonique (HHG) généré par l’interaction d’un champ laser intense sur une cible gazeuse d’autre part, sur la plateforme PLFA (SLIC, groupe Attophysique du LIDyL, CEA Saclay).La première partie de la thèse est consacrée à la caractérisation complète de l’état de polarisation d’un rayonnement incident. Pour cela, une méthode originale de « polarimétrie moléculaire » est introduite et qualifiée sur la ligne DESIRS équipée d’un polarimètre optique VUV étalon. Mise en œuvre pour déterminer complètement l’ellipse de polarisation du rayonnement HHG produit dans différentes configurations sur la source secondaire XUV PLFA, elle conduit à des résultats originaux incluant notamment la distinction entre les composantes circulaire et non polarisée du rayonnement étudié.La seconde partie porte sur la PID des molécules H2, D2 et HD induite à résonance avec les états doublement excités Q1 et Q2 par une lumière polarisée circulairement. Dans cette région énergétique (30-35 eV) où l’ionisation directe, l’autoionisation et la dissociation sont en compétition sur une échelle de quelques femtosecondes, l’excitation photonique donne lieu à une dynamique couplée électron-noyau ultrarapide. Les asymétries remarquables observées dans le dichroïsme circulaire dans le référentiel moléculaire, comparées aux calculs quantiques du groupe de F. Martín (UAM, Madrid), constituent une sonde sensible des interférences quantiques entre des chemins réactionnels indiscernables impliquant des cœurs ioniques de symétrie u/g différente. / This is thesis is dedicated to the study and the use of the remarkable properties of the molecular frame photoelectron angular distribution (MFPAD). This observable is a very sensitive probe of both the photoionization (PI) processes in small molecules, through the determination of the magnitudes and relative phases of the dipole matrix elements, and the polarization state of the ionizing light, which is entirely encoded in the MFPAD in terms of the Stokes parameters (s1, s2, s3). MFPAD measurements take advantage of dissociative photoionization (DPI) processes by combining an electron-ion 3D momentum spectroscopy technique with the use of different radiation facilities: SOLEIL synchrotron (DESIRS and PLEIADES beamlines) and the XUV PLFA beamline (SLIC, LIDyL Attophysics group, CEA Saclay) based on the interaction of a strong laser field with a gaseous target called high harmonic generation (HHG).The first part of the thesis is devoted to the complete characterization of the polarization state of an incoming radiation. In this context, an original “molecular polarimetry” method is introduced and demonstrated by comparison with a VUV optical polarimeter available on the DESIRS beamline. Using this method to determine the full polarization ellipse of HHG radiation generated in different conditions on the XUV PLFA facility leads to original results that include the challenging disentanglement of the circular and unpolarized components of the studied radiation.The second part deals with the study of DPI of the H2, D2 and HD molecules induced by circularly polarized light at resonance with the doubly excited states Q1 and Q2. In this energy region (30-35 eV) where direct ionization, autoionization and dissociation compete on a femtosecond timescale, the photonic excitation gives rise to complex ultrafast electronic and nuclear coupled dynamics. The remarkable asymmetries observed in the circular dichroism in the molecular frame, compared to quantum calculations of the group of F. Martín (UAM, Madrid), constitute a very sensitive probe of the quantum interferences between indistinguishable DPI channels involving ionic states of different u/g symmetry.

In this thesis, experimental studies are reported of ultrafast dynamics and third order optical nonlinear coefficients of carbon nanotubes, and time resolved coherent phonon dynamics of semiconductors and rare earth titanates. The thesis is divided into three parts. The first part presents (i) general introduction to theoretical background on nonlinear optical susceptibility and time resolved studies, and systems studied (chapter 1) and (ii) experimental techniques (chapter 2). The second part of the thesis deals with the measurements of third order nonlinear susceptibilities and ultrafast dynamics of single and double walled carbon nanotubes (chapter 3). The third part contains coherent phonon dynamics in semiconductors, Te (chapter 4), Bi2Te3 (chapter 5), and ZnTe (chapter 6) and spin-frustrated rare earth titanate insulators (chapter 7). Chapter 1: This chapter is a general introduction to the thesis. The chapter is divided into two parts: (i) light-matter interaction, and (ii) systems studied. Under light-matter interaction, we describe the required theoretical and conceptual background of nonlinear optical susceptibilities and time resolved carrier and phonon dynamics. In the next part, a brief summary of details of the systems studied, that include carbon nanotubes (single and double walled), semiconductors (Te, Bi2Te3 and ZnTe) and insulating spin-frustrated rare earth titanates (Gd2Ti2O7, Dy2Ti2O7 and Tb2Ti2O7), are presented. Chapter 2: Details of the ultrafast laser systems (femtosecond oscillator and amplifier), pulse width measurements and ultrafast experimental pump-probe and z-scan techniques, used in this thesis are given in this chapter. Chapter 3: Here the experimental results on the measurements of third order optical nonlinearity and ultrafast dynamics of single and double walled carbon nanotubes are presented. The chapter starts with a general overview of optical switching followed by known ultrafast dynamics and nonlinear studies on carbon nanotubes. In the next section, our theoretical modelling of nonlinear absorption and refraction in the limit of saturable absorption is described. The final two sections depict our results on single and double walled carbon nanotubes. These studies indicate that double walled carbon nanotubes are best candidates for ultrafast optical switching. Chapter 4: This chapter presents temperature and pump fluence dependent femtosecond time resolved reflectivity measurements on tellurium. The chapter starts with an overview of previous pump-probe reflectivity studies at room temperature on tellurium followed by our results. A totally symmetric A1 coherent phonon at 3.6 THz responsible for the oscillations in the reflectivity data is observed to be strongly positively chirped (i.e, phonon time period decreases at longer pump-probe delay times) with increasing photoexcited carrier density, more so at lower temperatures. We show for the first time that the temperature dependence of the coherent phonon frequency is anomalous (i.e, increasing with increasing temperature) at high photoexcited carrier density due to electron-phonon interaction. At the highest photoexcited carrier densities of ~ 1.4 x 1021cm-3 and the sample temperature of 3K, the lattice displacement of the coherent phonon mode is estimated to be as high as ~ 0.24 Å. Numerical simulations based on coupled effects of optical absorption and carrier diffusion reveal that the diffusion of carriers dominates the non-oscillatory electronic part of the time-resolved reflectivity. Finally, using the pump-probe experiments at low carrier density of 6 x 1018 cm-3, we separate the phonon anharmonicity to obtain the electron-phonon coupling contribution to the phonon frequency and linewidth. Chapter 5: This chapter begins with a introduction of previous ultrafast studies at room temperature on Bi2Te3 and then presents our results on the temperature dependent high pump fluence time resolved reflectivity measurements on Bi2Te3. The time resolved reflectivity data shows two coherently generated totally symmetric A1g modes at 1.85 THz and 3.6 THz at 296K which blue shift to 1.9 THz and 4.02 THz, respectively at 3K. At high photoexcited carrier density of ~ 1.7 x 1021cm-3, the phonon mode at 4.02 THz is two orders of magnitude higher positively chirped than the lower frequency mode at 1.9 THz. The chirp parameter, β is shown to vary inversely with temperature. The time evolution of these modes is studied using continuous wavelet transform of the time-resolved reflectivity data. The analysis shows that the build up time for the two coherent phonons is different. Chapter 6: This chapter starts with a general introduction on various as pects of ZnTe to be used in generation and detection of THz followed by our results on influence of carriers and sample temperature on coherent phonon and polariton generation in ZnTe. Combination of femtosecond Kerr, two photon absorption and impulsive stimulated Raman scattering experiments have been carried out to investigate the effect of pulse energy and crystal temperature on the generation of coherent polaritons and phonons in < 110 > cut ZnTe single crystals of three different resistivities. We demonstrate that the effect of two-photon induced free carriers on the creation of both the polaritons and phonons is largest at 4K where the free carrier lifetime is enhanced. Further, the temperature dependant impulsive stimulated Raman scattering on high and low purity ZnTe crystals allows us to unambiguously assign the phonon mode at 3.5 THz to the longitudinal acoustic mode at X-point in the Brillouin zone, LA(X) in contrast to the assignment as two-phonon process in earlier studies. Chapter 7: This chapter starts with an introduction on previous Raman studies on the pyrochlore systems accompanied by our results on the generation of coherent optical phonons in spin frustrated pyrochlore single crystals Dy2Ti2O7, Gd2Ti2O7 and Tb2Ti2O7 and their behavior as a function of sample temperature from 296K to 4K. At 4K, two coherent phonons are observed at 5.3 THz (5.0 THz) and ~ 9.3 THz (9.4 THz) for Dy2Ti2O7 (Gd2Ti2O7) whereas three coherent phonons are generated at ~ 4.8 THz, 8.6 THz and 9.6 THz for Tb2Ti2O7. In the case of spin-ice Dy2Ti2O7, a clear discontinuity is observed in the linewidths of both the coherent phonons as well as in the phase of low energy coherent phonon mode, indicating a subtle structural change as also suggested by Raman studies. In comparison, such changes are not seen in the coherent phonons of Gd2Ti2O7, and Tb2Ti2O7. Another important observation is the phase difference of ‘π’ between the modes in all the samples, thus suggesting that the driving forces behind the generation of these modes are different in nature unlike a purely impulsive or displacive mechanism. Chapter 8: This chapter summarizes our results reported in this thesis and gives future directions.

Cette thèse présente une étude expérimentale des propriétés électroniques de deux matériaux topologiques, notamment l’isolant topologique tridimensionnel irradié Bi₂Te₃ et le super-réseau topologique naturel Sb₂Te. Les deux systèmes ont été étudiés par des techniques basées sur la spectroscopie de photoémission. Les composés Bi₂Te₃ ont été irradiés par des faisceaux d’électrons de haute énergie. L’irradiation avec des faisceaux d’électrons est une approche très prometteuse pour réaliser des matériaux qui sont vraiment isolants dans le volume, afin de mettre en évidence le transport quantique dans les états de surface protégés. En étudiant une série d’échantillons de Bi₂Te₃ par la technique de spectroscopie de photoémission résolue en temps et en angle (trARPES), nous montrons que les propriétés topologiques des états de surface de Dirac sont conservées après irradiation électronique, mais leurs dynamiques ultra-rapides de relaxation sont très sensibles aux modifications reliées aux propriétés du volume. De plus, nous avons étudié la structure électronique des bandes occupées et inoccupées du Sb₂Te. En utilisant la microscopie de photoémission d’électrons à balayage (SPEM), nous avons constamment trouvé diverses régions non équivalentes sur la même surface après avoir clivé plusieurs monocristaux de Sb₂Te. Nous avons pu identifier trois terminaisons distinctes caractérisées par différents rapports stœchiométriques de surface Sb/Te et possédant des différences claires dans leurs structures de bandes. Pour la terminaison dominante riche en tellure, nous avons également fourni une observation directe des états électroniques excités et de leurs dynamiques de relaxation en ayant recours à la technique trARPES. Nos résultats indiquent clairement que la structure électronique de surface est fortement affectée par les propriétés du volume du super-réseau. Par conséquent, pour les deux systèmes, nous montrons que la structure électronique de surface est absolument connectée aux propriétés du volume. / This thesis presents an experimental study of the electronic properties of two topological materials, namely, the irradiated three-dimensional topological insulator Bi₂Te₃ and the natural topological superlattice phase Sb₂Te. Both systems were investigated by techniques based on photoemission spectroscopy. The Bi₂Te₃ compounds have been irradiated by high-energy electron beams. Irradiation with electron beams is a very promising approach to realize materials that are really insulating in the bulk, in order to emphasize the quantum transport in the protected surface states. By studying a series of samples of Bi₂Te₃ using time- and angle-resolved photoemission spectroscopy (trARPES) we show that, while the topological properties of the Dirac surface states are preserved after electron irradiation, their ultrafast relaxation dynamics are very sensitive to the related modifications of the bulk properties. Furthermore, we have studied the occupied and unoccupied electronic band structure of Sb₂Te. Using scanning photoemission microscopy (SPEM), we have consistently found various nonequivalent regions on the same surface after cleaving several Sb₂Te single crystals. We were able to identify three distinct terminations characterized by different Sb/Te surface stoichiometric ratios and with clear differences in their band structure. For the dominating Te-rich termination, we also provided a direct observation of the excited electronic states and of their relaxation dynamics by means of trARPES. Our results clearly indicate that the surface electronic structure is strongly affected by the bulk properties of the superlattice. Therefore, for both systems, we show that the surface electronic structure is absolutely connected to the bulk properties.

No description available.

In dieser Arbeit wird das Wachstum von dünnen quasi-kristallinen Ge-Sb-Te (GST) Schichten mittels Molekularstrahlepitaxie demonstriert, die zu einer geordneten Konfiguration von intrinsischen Kristallgitterfehlstellen führen. Es wird gezeigt, wie es eine Strukturanalyse basierend auf Röntgenstrahlbeugungssimulationen, Dichtefunktionaltheorie und Transmissionselektronenmikroskopie ermöglicht, eine eindeutige Beurteilung der Kristallgitterlückenanordnung in den GST-Proben vorzunehmen. Das Verständnis für die Ordnungsprozesse der Gitterfehlstellen erlaubt eine gezielte Einstellung des Ordnungsgrades selbst, der mit der Zusammensetzung und der Kristallphase des Materials in Zusammenhang steht. Auf dieser Basis wurde ein Phasendiagramm mit verschiedenen Wachstumsfenstern für GST erstellt. Des Weiteren wird gezeigt, dass man eine hohe Ordnung der Gitterfehlstellen in GST auch durch Ausheizprozesse und anhand von Femtosekunden-gepulster Laserkristallisation von amorphem Material erhält, das zuvor auf einem als Kristallisationsgrundlage dienenden Substrat abgeschiedenen wurde. Diese Erkenntnis ist bemerkenswert, da sie zeigt, dass sich kristalline GST Schichten mit geordneten Kristallgitterlücken durch verschiedene Herstellungsprozesse realisieren lassen. Darüber hinaus wurde das Wachstum von GeTe/Sb2Te3 Übergittern durchgeführt, deren Struktur die von GST mit geordneten Gitterfehlstellen widerspiegelt. Die Möglichkeit den Grad der Gitterfehlstellenordung in GST gezielt zu manipulieren wurde mit einer Studie der Transporteigenschaften kombiniert. Die Anwendung von großflächigen Charakterisierungsmethoden wie XRD, Raman und IR-Spektroskopie, erlaubte die Bestimmung der Phase und des Fehlstellenordnungsgrades von GST und zeigte eindeutig, dass die Fehlstellenordnung für den Metall-Isolator-Übergang (MIT) verantwortlich ist. Insbesondere wird durch das Vergleichen von XRD-Messungen mit elektrischen Messungen gezeigt, dass der Übergang von isolierend zu leitend erfolgt, sobald eine Ordnung der Kristallgitterlücken einsetzt. Dieses Phänomen tritt in der kubischen Kristallphase auf, wenn Gitterfehlstellen in GST von einem ungeordneten in einen geordneten Zustand übergehen. Im zweiten Teil des Kapitels wird eine Kombination aus FIR- und Raman-Spektroskopie zur Untersuchung der Vibrationsmoden und des Ladungsträgerverhaltens in der amorphen und der kristallinen Phase angewendet, um Aktivierungsenergien für die Elektronenleitung, sowohl für die kubische, als auch für die trigonale Kristallphase von GST zu bestimmen. Hier ist es wichtig zu erwähnen, dass, in Übereinstimmung mit Ergebnissen aus anderen Untersuchungen, das Auftauchen eines MIT beim Übergang zwischen der ungeordneten und der geordneten kubischen Phase beobachtet wurde. Schlussendlich wurden verschiedene sogenannte Pump/Probe Technik, bei der man das Material mit dem Laser anregt und die Röntgenstrahlung oder Terahertz (THz)-spektroskopie als Sonde nutzt, angewandt. Dies dient um ultra-schnelle Dynamiken zu erfassen, die zum Verständnis der Umschaltmechanismen nötig sind. Die Empfindlichkeit der THz-Messungen hinsichtlich der Leitfähigkeit, sowohl in GST, als auch in GeTe/Sb2Te3 Übergittern zeigte, dass die nicht-thermische Natur der Übergitterumschaltprozesse mit Grenzflächeneffekten zusammenhängt und . Der Ablauf wird mit beeindruckender geringer Laser-Fluenz erreicht. Dieses Ergebnis stimmt mit Berichten aus der Literatur überein, in denen ein Kristall-zu Kristallwechsel von auf Übergittern basierenden Speicherzellen für effizienter gehalten wird als GST Schmelzen, was zu einen ultra-schwachen Energieverbrauch führt. / The growth by molecular beam epitaxy of Ge-Sb-Te (GST) alloys resulting in quasi-single-crystalline films with ordered configuration of intrinsic vacancies is demonstrated. It is shown how a structural characterization based on transmission electron microscopy, X-ray diffraction and density functional theory, allowed to unequivocally assess the vacancy ordering in GST samples, which was so far only predicted. The understanding of the ordering process enabled the realization of a fine tuning of the ordering degree itself, which is linked to composition and crystalline phase. A phase diagram with the different growth windows for GST is obtained. High degree of vacancy ordering in GST is also obtained through annealing and via femtosecond-pulsed laser crystallization of amorphous material deposited on a crystalline substrate, which acts as a template for the crystallization. This finding is remarkable as it demonstrates that it is possible to create a crystalline GST with ordered vacancies by using different fabrication procedures. Growth and structural characterization of GeTe/Sb2Te3 superlattices is also obtained. Their structure resembles that of ordered GST, with exception of the Sb and Ge layers stacking sequence. The possibility to tune the degree of vacancy ordering in GST has been combined with a study of its transport properties. Employing global characterization methods such as XRD, Raman and Far-Infrared spectroscopy, the phase and ordering degree of the GST was assessed, and unequivocally demonstrated that vacancy ordering in GST drives the metal-insulator transition (MIT). In particular, first it is shown that by comparing electrical measurements to XRD, the transition from insulating to metallic behavior is obtained as soon as vacancies start to order. This phenomenon occurs within the cubic phase, when GST evolves from disordered to ordered. In the second part of the chapter, a combination of Far-Infrared and Raman spectroscopy is employed to investigate vibrational modes and the carrier behavior in amorphous and crystalline phases, enabling to extract activation energies for the electron conduction for both cubic and trigonal GST phases. Most important, a MIT is clearly identified to occur at the onset of the transition between the disordered and the ordered cubic phase, consistently with the electrical study. Finally, pump/probe schemes based on optical-pump/X-ray absorption and Terahertz (THz) spectroscopy-probes have been employed to access ultrafast dynamics necessary for the understanding of switching mechanisms. The sensitivity of THz-probe to conductivity in both GST and GeTe/Sb2Te3 superlattices showed that the non-thermal nature of switching in superlattices is related to interface effects, and can be triggered by employing up to one order less laser fluences if compared to GST. Such result agrees with literature, in which a crystal to crystal switching of superlattice based memory cells is expected to be more efficient than GST melting, therefore enabling ultra-low energy consumption.