Deposition of silica shells onto ZnO nanoparticles (NPs) in dimethyl sulfoxide was found to be an efficient tool for terminating the growth of ZnO NPs during thermal treatment and producing stable core–shell ZnO NPs with core sizes of 3.5–5.8 nm. The core–shell ZnO–SiO2 NPs emit two photoluminescence (PL) bands centred at [similar]370 and [similar]550 nm originating from the direct radiative electron–hole recombination and defect-mediated electron–hole recombination, respectively. An increase of the ZnO NP size from 3.5 to 5.8 nm is accompanied by a decrease of the intensity of the defect PL band and growth of its radiative life-time from 0.78 to 1.49 μs. FTIR spectroscopy reveals no size dependence of the FTIR-active spectral features of ZnO–SiO2 NPs in the ZnO core size range of 3.5–5.8 nm, while in the Raman spectra a shift of the LO frequency from 577 cm−1 for the 3.5 nm ZnO core to 573 cm−1 for the 5.8 nm core is observed, which can indicate a larger compressive stress in smaller ZnO cores induced by the SiO2 shell. Simultaneous hydrolysis of zinc(II) acetate and tetraethyl orthosilicate also results in the formation of ZnO–SiO2 NPs with the ZnO core size varying from 3.1 to 3.8 nm. However, unlike the case of the SiO2 shell deposition onto the pre-formed ZnO NPs, individual core–shell NPs are not formed but loosely aggregated constellations of ZnO–SiO2 NPs with a size of 20–30 nm are. The variation of the synthetic procedures in the latter method proposed here allows the size of both the ZnO core and SiO2 host particles to be tuned. / Dieser Beitrag ist aufgrund einer (DFG-geförderten) Allianz- bzw. Nationallizenz frei zugänglich.

Transparent conductive oxides (TCOs) are key functional materials in existing and future electro-optical devices in the fields of energy efficiency, energy generation and information technology. The main application of TCOs is as thin films transparent electrodes where a combination of maximum electrical conductivity and transmittance in the visible to nearinfrared spectral range is required. However, due to the interdependence of the optical properties and the free electron density and mobility, respectively, these requirements cannot be achieved simultaneously in degenerately doped wide band-gap oxide semiconductors. Therefore, a detailed understanding of the mechanisms governing the generation of free charge carriers by extrinsic doping and the charge transport in these materials is essential for further development of high performance TCOs and corresponding deposition methods. The present work is aimed at a comprehensive investigation of the electrical, optical and structural properties as well as the elemental composition of (Al,Ga) doped ZnO and Nb doped TiO2 thin films prepared by pulsed DC reactive magnetron sputtering. The evolution of the film properties is studied in dependence of various deposition parameters through a combination of characterization techniques including Hall-effect, spectroscopic ellipsometry, spectral photometry, X-ray diffraction, X-ray near edge absorption, Rutherford backscattering spectrometry and particle induced X-ray emission. This approach resulted in the development of an alternative process control method based on the material specific current-voltage pressure characteristics of the reactive magnetron discharge which allows to precisely control the oxygen deficiency of the sputter deposited films. Based on the experimental data, models have been established that describe the room temperature charge transport properties and the dielectric function of the obtained ZnO and TiO2 based transparent conductors. On the one hand, these findings allow the prediction of material specific electron mobility limits by identifying the dominating charge carrier scattering mechanisms. On the other hand, new insight is gained into the origin of the observed transition from highly conductive to electrically insulating ZnO layers upon the incorporation of increasing concentrations of Al at elevated growth temperatures. Moreover, the Al and Ga dopant activation in ZnO have been quantified systematically for a wide range of Al concentrations and deposition conditions. A direct comparison of the Ga and Al doping efficiency demonstrates that Ga is a more efficient electron donor in ZnO. Further, it has been shown that high free electron mobilities in polycrystalline and epitaxial Nb:TiO2 layers can be achieved by reactive magnetron sputtering of TiNb alloy targets. The suppression of rutile phase formation and the control of the Nb dopant activation by fine tuning the oxygen deficiency have been identified as crucial for the growth of high quality TiO2 based TCO layers.

Die Arbeit befasst sich mit der Untersuchung von weitbandlückigen Halbleitern über raumladungszonenspektroskopische Methoden. Dabei liegt der Schwerpunkt auf der Detektion von elektronisch und optisch aktiven Defektzuständen in solchen Materialien. Die Experimente wurden exemplarisch an dem II-VI Halbleiter Zinkoxid (ZnO) durchgeführt, welcher inform von Volumenkristallen, Mikronadeln und Dünnfilmen zur Verfügung stand. Raumladungszonen wurden über Schottky-Kontakte realisiert. Nach einer Einführung in die Theorie der Raumladungszonenspektroskopie wird ein Überblick über Defekte in verschiedenartig gezüchteten ZnO gegeben. Dazu werden die Standardverfahren Strom-Spannungs-Messung, Kapazitäts-Spannungs-Messung, Thermische Admittanz- Spektroskopie (TAS) und Deep Level Transient Spectroscopy (DLTS) verwendet. Ergänzend wurden die auf weitbandlückige Halbleiter ausgelegten Verfahren Low Rate Deep Level Transient Spectroscopy (LR-DLTS) und Deep Level Optical Spectroscopy (DLOS) eingesetzt, mit welchen es möglich ist Defektzustände in der gesamten Bandlücke von ZnO nachzuweisen. Für die untersuchten Störstellenniveaus konnten somit die thermische Aktivierungsenergie, Einfangquerschnitte freier Ladungsträger und Photoionisationsquerschnitte bestimmt werden. Typischerweise werden tiefe Defekte durch die Bestrahlung mit hochenergetischen Protonen erzeugt. Derartige Behandlungen wurden an binären ZnO- und ternären (Mg,Zn)ODünnfilmen durchgeführt, wobei die Generationsrate eines Defektes über Variation der verwendeten Strahlungsdosis bestimmt wurde. Ionenimplantationen spielen eine große Rolle im Herstellungsprozess von Bauelementen, sind jedoch für ZnO nicht etabliert. Die Auswirkung der Implantation von inerten Argon-Ionen, sowie die nachträgliche thermische Behandlung auf die Konzentration intrinsischer Defekte wurde untersucht. Zink- und Sauerstoff-Implantationen bewirken, neben der Generation von Defekten, eine lokale Änderung der Stöchiometrie. Durch einen Vergleich der Defektkonzentrationen nach Zn-, O-, Ne- und Ar-Implantation können Rückschlüsse auf die chemische Natur intrinsischer Defekte geschlossen werden.

Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development for commercial applications because of its demonstrated high performance at low processing temperatures. The objective of the research presented in this thesis is to provide detailed assessments of device stability, temperature dependence, and related phenomena for IGZO-based TFTs processed at temperatures between 200 °C and 300 °C. TFTs tested exhibit an almost rigid shift in log₁₀(I[subscript D]) – V[subscript GS] transfer curves in which the turn-on voltage, V[subscript ON], moves to a more positive gate voltage with increasing stress time during constant-voltage bias-stress testing of IGZO TFTs. TFT stability is improved as the post-deposition annealing temperature increases over the temperature range of 200 – 300 ºC. The turn-on voltage shift induced by constant-voltage bias-stressing is at least partially reversible; V[subscript ON] tends to recover towards its initial value of V[subscript ON] if the TFT is left unbiased in the dark for a prolonged period of time and better recovery is observed for a longer recovery period. V[subscript ON] for a TFT can be set equal to zero after bias-stress testing if the TFT electrodes are grounded and the TFT is maintained in the dark for a prolonged period of time. Attempts to accelerate the recovery process by application of a negative gate bias at elevated temperature (i.e., 100 ºC) were unsuccessful, resulting in severely degraded subthreshold swing. An almost rigid log₁₀(I[subscript D]) – V[subscript GS] transfer curve shift to a lower (more negative) V[subscript ON] with increasing temperature is observed in the range of –50 °C to +50 °C, except for a TFT with an initial V[subscript ON] equal to zero, in which case the log₁₀(ID) – V[subscript GS] transfer curve is temperature-independent. A more detailed temperature-dependence assessment, however, indicates that the log₁₀(I[subscript D]) – V[subscript GS] transfer curve shift is not exactly rigid since the mobility is found to increase slightly with increasing temperature. A noticeable anomaly is observed in certain log₁₀(I[subscript D]) – VGS transfer curves, especially when obtained at elevated temperature (e.g., 30 and 50 ºC), in which I[subscript D] decreases precipitously near zero volts in the positive gate voltage sweep. This anomaly is attributed to a gate-voltage-step-involved detrapping and subsequent retrapping of electrons in the accumulation channel and/or channel/gate insulator interface. In fact, all IGZO TFT stability and temperature-dependence trends are attributed to channel interface and/or channel bulk trapping/detrapping. / Graduation date: 2009

Thin silver films are widely used in low-emissivity coatings for building glazing due to their high reflectance in the infrared and high transmittance in the visible spectrum. The determining parameter for the infrared reflectance is the electrical conductance of the layer stack - the better the conductance the higher the reflectance. Electrically conductive films of thicknesses smaller than the electron mean free path exhibit a strong increase in the residual resistivity proportional to the inverse of the film thickness. Despite intensive discussions, which have extended over tens of years, it is not understood yet if this conductive behavior originates from electron scattering at interfaces (Fuchs-Sondheimer model) or grain boundaries (Mayadas-Shatzkes model). To achieve a fundamental understanding of the prevailing electron scattering mechanisms, aluminum-doped zinc oxide (ZnO:Al) / Ag / ZnO:Al layer stacks produced by magnetron sputtering were investigated concerning their electronic structure and electrical transport properties. The electronic structure of the layer stacks was probed and analyzed by electron energy-loss spectroscopy. By this technique, plasmonic excitations are observed, which can be categorized into excitations of the electrons in the bulk silver and excitations at the ZnO:Al / Ag interface. The plasmons were analyzed with respect to their dispersion and the peak width, and brought into relation with electrical conductivity measurements by calculating the plasmon lifetime and the electron scattering rate. The difficulty in determining the relative contributions of the interface and grain boundary scattering in experimental conditions is due to the fact that the way in which these scattering mechanisms depend on the film thickness, is very similar. Understanding the electron transport in thin films is of paramount importance, because the differentiation between the scattering mechanisms is a key issue for the improvement of the coatings. In the present work, the solution came from the expected difference in the temperature-dependent behavior of the resistivity between electron scattering at interfaces and electron scattering at grain boundaries. Hence, the resistivity was measured as a function of the temperature on layer stacks with different silver film thickness varying in the range of 4 to 200 nm. The data were analyzed using the extended Mayadas-Shatzkes model involving both electron scattering at interfaces (Fuchs-Sondheimer model), and electron scattering at grain boundaries. The results demonstrate that electron scattering at grain boundaries dominates for all film thicknesses. The basic layer stack was compared to more sophisticated systems, obtained either by adding a thin titanium layer in between silver and ZnO:Al, or by exposing the growing silver film to an oxygen partial pressure (oxidizing the film). Furthermore, the effect of annealing at 250°C was studied for all these systems. / Dünne Silberfilme werden aufgrund ihres hohen Reflexionsvermögens im infraroten Spektrum und ihres hohen Transmissionsvermögens im Spektrum des Sonnenlichtes als Wärmeschutzbeschichtungen für Fensterglas verwendet. Der entscheidende Parameter für das Reflexionsvermögen der Schicht ist die elektrische Leitfähigkeit - je höher die Leitfähigkeit, desto stärker wird Infrarotlicht reflektiert. Elektrisch leitende Schichten mit Schichtdicken dünner als die mittlere freie Weglänge der Elektronen weisen einen starken Anstieg des spezifischen Widerstandes auf, der sich proportional zur inversen Schichtdicke verhält. Trotz ausführlicher Diskussionen während der letzten Jahrzehnte, ist noch nicht geklärt ob dieses Verhalten auf Streuung von Elektronen an Grenzflächen (Fuchs-Sondheimer-Modell) oder an Korngrenzen (Mayadas-Shatzkes-Modell) zurückzuführen ist. Um ein grundlegendes Verständnis der vorherrschenden Streumechanismen zu erlangen, wurden Schichtstapel der Struktur Aluminium-dotiertes Zinkoxid (ZnO:Al) / Ag / ZnO:Al, welche mittels Magnetron-Sputtern hergestellt wurden, hinsichtlich ihrer Transporteigenschaften und elektronischen Struktur untersucht. Die elektronische Struktur der Schichtsysteme ist mittels Elektronen-Energieverlust-Spektroskopie untersucht und bezüglich ihrer plasmonischen Anregungen analysiert wurden. Diese können in Anregungen der Volumenelektronen des Silbers und Anregungen der Elektronen aus der ZnO:Al / Ag Grenzfläche unterteilt werden. Die Plasmonen wurden hinsichtlich ihrer Impulsabhängigkeit und Anregungsbreite analysiert und durch Berechnung der Plasmonenstreurate mit den Messungen der elektrischen Leitfähigkeit verglichen. Aufgund der Tatsache, dass Genzflächen- und Korngrenzstreuung eine ähnliche Schichtdickenabhängigkeit aufweisen, gestaltet sich die Bestimmung der relativen Beiträge beider Streumechanismen als schwierig. Diese Problem kann durch die Untersuchung der Temperaturabhängigkeit der Streumechanismen, die sich für Grenzflächen- und Korngrenzstreuung unterscheidet, gelöst werden. Der spezifische Widerstand wurde in Abhängigkeit von der Temperatur an mehreren Proben unterschiedlicher Silberschichtdicke (im Bereich von 4 bis 200 nm) gemessen. Die Daten wurden anhand des erweiterten Mayadas-Shatzkes-Modells, welches sowohl Streuung an Grenzflächen (Fuchs-Sondheimer-Modell) als auch an Korngrenzen berücksichtigt, evaluiert. Die Ergebnisse zeigen eindeutig, dass für alle Schichtdicken die Elektronenstreuung an Korngenzen der dominierende Streumechanismus ist. Die Ergebnisse der Analyse des fundmentalen Schichtsystems wurden mit denen komplexerer Systeme verglichen, bei denen zum einen durch Hinzufügen einer dünnen Titanschicht die Grenzfläche zwischen Silber und ZnO:Al modifiziert wurde und zum anderen der Silberfilm durch einen erhöhten Sauerstoff-Partialdruck während der Beschichtung oxidiert wurde. Des Weiteren wurde der Effekt einer Temperung bei 250°C an allen Systemen untersucht. / Les vitrages bas-émissifs sont fréquemment élaborés par dépôts de revêtements dont la couche active est un film mince d'argent. Le paramètre qui détermine la réflexion dans l'infra-rouge est la conductance électrique de l'empilement. La résistivité électrique résiduelle de films dont l'épaisseur est inférieure au libre parcours moyen des électrons croît fortement en fonction de l'inverse de l'épaisseur. En dépit d'intenses recherches menées pendant des dizaines d'années, l'origine de cet accroissement de résistivité - réflexion des électrons par les interfaces (modèle de Fuchs-Sondheimer) ou par les joints de grains (modèle de Mayadas-Shatzkes). Pour comprendre les mécanismes à l'œuvre dans le transport des électrons, des couches ZnO dopé aluminium (ZnO:Al) / Ag / (ZnO:Al) produites par pulvérisation plasma ont été étudiée concernant leur structure électronique et propriétés de transport électrique. Les empilements ont été examinés par spectroscopie de pertes d'énergie d'électrons. Les spectres font apparaître les excitations des électrons de volume de l'argent et les excitations à l'interface ZnO:Al / Ag. Les excitations ont été analysés concernant leur dispersion. En outre, la durée de vie moyenne des plasmons déterminée d'après la largeur du pic de plasmon d'interface se compare bien à la l'inverse de la fréquence de diffusion des électrons qui se déduit de l'application du modèle de Drude aux données relatives à la résistivité. La difficulté dans la détermination des contributions relatives des modèles de Fuchs-Sondheimer et Mayadas-Shatzkes dans les conditions expérimentales est due au fait que ces deux modèles présentent des variations très similaires en fonction de l'épaisseur des films. D'importance primordiale pour la compréhension du transport dans les films minces, la question est une clé pour l'amélioration des revêtements bas-émissifs. La solution a été apportée ici par la différence de comportement en fonction de la température des diffusions des électrons aux interfaces et aux joints de grains. D'après cela, la résistance d'empilements comportant des films d'argent d'épaisseurs comprises entre 4 et 200 nm a été mesurée en fonction de la température. Les données ont été analysées au moyen de la version du modèle de Mayadas-Shatzkes qui inclut à la fois la diffusion des électrons aux interfaces (modèle de Fuchs-Sondheimer) et la diffusion des électrons aux joints de grains. Il a té démontré que, pour toutes les épaisseurs, la diffusion des électrons aux joints de grains constitue l'effet dominant. Les résultats de l'analyse du système fondamental ont été comparées avec les résultats de systèmes plus sophistiqués, obtenus soit en intercalant une couche additionnelle de titane entre l'argent et le ZnO (méthode communément utilisée pour améliorer le mouillage du ZnO par l'argent), soit par exposition à une pression partielle du film d'argent encours de croissance (pour oxyder le film). En outre, l'effet du recuit à 250°C a été étudié pour tous ces systèmes.

Advancing the field of nanotechnology to incorporate the unique properties observed at the nanoscale into functional devices has become a major scientific thrust of the 21st century. New fabrication tools and assembly techniques are required to design and manufacture devices based on one-dimensional nanostructures. Three techniques for manipulating nanomaterials post-synthesis have been developed. Two of them involve direct contact manipulation through the utilization of a physical probe. The third uses optically generated surface acoustic waves to reproducibly control and assemble one-dimensional nanostructures into desired locations. The nature of the third technique is non-contact and limits contamination and defects from being introduced into a device by manipulation. While the effective manipulation of individual nanostructures into device components is important for building functional nanosystems, commercialization is limited by this one-device-at-a-time process. A new approach to nanostructure synthesis was also developed to site-specifically nucleate and grow nanowires between two electrodes. Integrating synthesis directly with prefabricated device architectures leads to the possible mass production of NEMS, MEMS and CMOS systems based upon one-dimensional nanomaterials. The above processes have been pursued to utilize piezoelectric ZnO nanobelts for applications in high frequency electronic filtering as well as biological and chemical sensing. The high quality, single crystal, faceted nature of these materials make them ideal candidates for studying their properties through the designs of a bulk acoustic resonator. The first ever piezoelectric bulk acoustic resonator based on bottom-up synthesized belts will be demonstrated. Initial results are promising and new designs are implemented to scale the device to sub-micron dimensions. Multiple models will be developed to assist with design and testing. Some of models presented will help verify experimental results while others will demonstrate some of the problems plaguing further investigations.

Τα νανοϋλικά, τα υλικά δηλαδή που οι διαστάσεις τους είναι στην νανοκλίμακα, έχουν διαφορετικές ιδιότητες από τα αντίστοιχα υλικά σε μεγαλύτερη κλίμακα. Για αυτό το λόγο, τα νανοϋλικά παρουσιάζουν ιδιαίτερο ενδιαφέρον για περαιτέρω μελέτη και έρευνα. Σε αυτά τα υλικά ανήκει και το οξείδιο του ψευδαργύρου (ZnO). Το οξείδιο του ψευδαργύρου είναι ένας σύνθετος ημιαγωγός τύπου II-IV με άμεσο ενεργειακό χάσμα (Eg=3.37 eV) σε θερμοκρασία δωματίου και με μεγάλη ενέργεια σύνδεσης εξιτονίου (60 meV). Σκοπός της παρούσας διπλωματικής εργασίας είναι η σύνθεση, ο χαρακτηρισμός και η μελέτη ιδιοτήτων νανοσύνθετων υλικών οξειδίου του ψευδαργύρου. Προς αυτόν τον σκοπό, θα παρασκευάσουμε νανοδομές ZnO, με τη μέθοδο του ατμού-υγρού-στερεού (VLS), σε τριζωνικό φούρνο. Στην πορεία της εργασίας, στο πρώτο κεφάλαιο θα δοθούν οι ορισμοί της νανοτεχνολογίας και των νανουλικών. Στο δεύτερο κεφάλαιο, θα αναλυθεί η δομή και οι ιδιότητες του οξειδίου του ψευδαργύρου (ZnO), βάσει των κυρίων μεθόδων ανάπτυξης των νανοδομών του ZnO. Στο τρίτο κεφάλαιο, θα γίνει ανάλυση των μεθόδων χαρακτηρισμού των νανοδομών του ZnO,που θα ακολουθήσουμε στην παρούσα εργασία. Στο επόμενο κεφάλαιο (4ο), θα παρουσιαστεί η μέθοδος παρασκευής των νανοδομών του ZnO και στο αμέσως επόμενο, παρουσιάζονται τα αποτελέσματα του χαρακτηρισμού των νανοδομών ZnO, με τις μεθόδους PL, SEM και XRD. Στο τελευταίο κεφάλαιο αναφέρονται τα συμπεράσματα που προέκυψαν από την παρούσα διπλωματική εργασία. / Nanomaterials, materials on the scale of a few nanometers, have different properties in comparison with larger-scale materials. For this reason, nanomaterials are of particular interest for further study and research. Zinc Oxide (ZnO) belongs to these materials. ZnO is a complex II-VI semiconductor with a direct band-gap energy (Eg = 3.37 eV) at room temperature and a large exciton binding energy (60 meV). The aim of the present diploma thesis, is the preparation, the characterization and the study of the properties of ZnO nanoparticles. In order to accomplish that, we are going to produce nanostructures of ZnO, using the Vapor-Solid-Solid method, in a three-zone furnace. In the first chapter, we give the definitions of nanomaterials and various methods of producing them. In the chapter that follows, we are analyzing the properties of ZnO, the main methods of producing nanostructures of ZnO as well as the ways of exploiting these specific nanostructures. Thereafter, in chapter three, the three methods of characterizing the samples with the nanostructures, are analyzed. In the next chapter, the experimental procedure is presented, whereas on the fifth chapter the results are presented, using the methods of SEM, PL and XRD. In the final chapter we make about conclusion about this diploma thesis

The persistence of biofilms in hospital settings are associated with Healthcare Associated Infections (HCAI), causing increased morbidity, mortality and healthcare costs. The resistance of biofilms against commonly used hospital disinfectants has been well reported. Metal and metal oxide nanoparticles (NP) such as silver (Ag), copper (Cu), zinc oxide (ZnO) and copper oxide (CuO) exhibit antimicrobial properties against various pathogens. Methods: Biofilm formation of Pseudomonas aeruginosa and Staphylococcus aureus in a Centre for Disease Control (CDC) biofilm reactor and a 96 well plate was compared. A three stage approach including Minimum Biofilm Reduction Concentration (MBRC), R2 values and log(10) reductions was used to assess the efficacy of Ag and ZnO NPs both alone and in combination against P. aeruginosa and S. aureus biofilms. Atomic Absorption Spectroscopy (AAS), Scanning Electron Microscopy (SEM) and Confocal Laser Scanning Microscopy (CLSM) was used to further assess the antimicrobial ability of the metal and metal oxide NPs. The prevention of P. aeruginosa and S. aureus adherence on Ag and ZnO thin film coating on silicon (Si) surfaces was also investigated, as well as icaC, ebpS and fnbB gene expression in S. aureus biofilms. Results: The CDC biofilm reactor demonstrated to be the most effective method for P. aeruginosa and S. aureus biofilm production in comparison to 96 well plates, with lower standard errors of the mean (SE) and higher replicability. Individual MBRC of ZnO and Ag NPs in suspension were 256 and 50 µg/ml for P. aeruginosa and 16 and 50 µg/ml for S. aureus respectively. The concentrations in combination were reduced by at least a half, with concentrations of 32/25 µg/ml of ZnO/Ag NPs in suspension resulting in a significant (p ≤0.05) reduction of 3.77 log(10) against P. aeruginosa biofilms and 8/12 µg/ml of ZnO/Ag NPs in suspension resulted in a 3.91 log(10) (p ≤0.05) against S. aureus biofilms. Both combinations showed an additive effect. Time point analysis confirmed that a 24 hour treatment is vital for any significant (p ≤0.05) antimicrobial activity. AAS data suggested that the Ag+ ions quenched Zn2+ ions, therefore the antimicrobial efficacy of the combination is mainly due to Ag+ ions. Damage of the biofilms from Ag and ZnO NPs was observed in the SEM imaging and energy dispersive X-ray (EDX) analysis confirmed the adherence of Zn and Ag within the biofilms. CLSM imaging showed dead (red) cells of P. aeruginosa and S. aureus biofilms throughout the depth of the biofilm. P. aeruginosa formation was reduced by 1.41 log(10) and 1.43 log(10) on Ag and ZnO thin film coatings respectively. For S. aureus, a reduction of 1.82 log(10) and 1.65 log(10) was obtained for Ag and ZnO coating respectively. Only low levels of ribonucleic acid (RNA) were achieved so no further gene analysis could occur. Conclusion: Reductions of ≥3 log(10) were observed for P. aeruginosa and S. aureus biofilm treatment with ZnO/Ag NP suspensions. It can be concluded that the ZnO/Ag NP suspensions had greater antimicrobial activity than Ag and ZnO coated surfaces owing to large concentrations of Ag+ and Zn2+ ions acting upon the biofilms. The slower release of ions from coated surfaces suggest an inadequate concentration of ions in the media, which are therefore unable to prevent biofilm formation as rapidly as NP suspensions, however provide a sustained release of ions over time. The results from this investigation propose that Ag and ZnO NPs in suspension could be a potential alternative to disinfectants for use in nosocomial environments against P. aeruginosa and S. aureus biofilms.

Magister Scientiae - MSc (Physics) / Zinc oxide (ZnO) is a wide and direct semiconductor with a wurtzite crystal structure. Its multifunctionality as the ideal candidate in applications such as blue-UV light emitting diodes, transparent conducting oxide, selective gas sensor and efficient catalyst support among others, has attracted a significant interest worldwide. Nano-scaled ZnO has been synthesized in a plethora of shapes. A rich variety of physical and chemical methodologies have been used in the synthesis of undoped or doped ZnO. However, such methods either necessitate relatively high vacuum infrastructures, elevated temperatures, or the use of toxic reagents. The "green chemistry" synthesis of metal oxide nanoparticles which is based on using natural plant extract as an effective 'reducing agent' of metal precursor, has been reported to be a cleaner and environment-friendly alternative to the physical and chemical methods. The thesis is based on the synthesis and the main physical properties of pure ZnO nanoparticles synthesized by a completely green chemistry process using the natural extract of Aspalathus Linearis to bio-reduce the zinc acetate precursor. The obtained ZnO nanopowdered samples were annealed at different temperatures from 300 °C to 600 °C. The samples were characterized using Scanning Electron Microscopy, Energy Dispersive Spectroscopy, Transmission Electron Microscopy, X-ray Diffraction, Differential Scanning Calorimetry, Thermogravimetric Analysis and Fourier Transform Infrared. Highly pure quasi-spherical ZnO nanoparticles with an average crystallite size of 24.6 nm (at 300 °C), 27.2 nm (at 400 °C), 27.6 nm (at 500 °C), and 28.5 nm (at 600 °C) were found. The results also showed that the average crystallite size increased with an increase in annealing temperature. It was successfully demonstrated that the natural plant extract of Aspalathus Linearis can be used in the bio-reduction of zinc acetate dihydrate to prepare highly pure ZnO nanoparticles.

Submitted by Wagner Henrique Rabelo (wagner144@bol.com.br) on 2018-07-26T20:18:44Z No. of bitstreams: 1 MESTRADO - WAGNER RABELO - VERSÃO FINAL.pdf: 3489307 bytes, checksum: 98e6a7b1b48eed69e255358e3a62fdd9 (MD5) / Approved for entry into archive by Lucilene Cordeiro da Silva Messias null (lubiblio@bauru.unesp.br) on 2018-07-30T12:45:51Z (GMT) No. of bitstreams: 1 rabelo_mh_me_bauru.pdf: 3537069 bytes, checksum: 6434660c8d96cc051a92066c85136ebc (MD5) / Made available in DSpace on 2018-07-30T12:45:51Z (GMT). No. of bitstreams: 1 rabelo_mh_me_bauru.pdf: 3537069 bytes, checksum: 6434660c8d96cc051a92066c85136ebc (MD5) Previous issue date: 2018-05-28 / O avanço das técnicas de deposição de filmes finos sobre as superfícies dos materiais tem permitido agregar valor e dar novas funcionalidades aos produtos. Atualmente, os filmes finos de óxido de estanho dopado com índio (ITO) têm encontrado grande aplicação no mercado. Entretanto, devido à pouca disponibilidade do índio na natureza e aos altos custos envolvidos na sua aquisição, elementos alternativos estão sendo estudados para sua substituição. Nesse contexto, destaca-se o óxido de zinco dopado com alumínio (AZO) como um promissor substituto, devido às características de elevada transmissividade, baixa resistividade e band gap da ordem de 3,37 eV, que permitem sua aplicação na síntese de filmes finos semicondutores. Com base no exposto, neste trabalho, foi projetado e desenvolvido o protótipo de uma fonte amplificadora de potência (FAP) de corrente alternada (AC) em baixa frequência, operando entre 15 a 40 kHz, responsável por iniciar e sustentar o campo elétrico utilizado para a geração do plasma. Esta FAP foi utilizada para a deposição de filmes finos de (AZO) por meio da técnica de magnetron sputtering. A análise das características morfológicas, ópticas e elétricas dos filmes de AZO produzidos neste estudo resultaram em uma transmitância superior a 80%, energia de band gap de 3,82 eV, e resistividade de 1,46.10-3 .cm, permitindo concluir que o filme produzido se comporta como um TCO (óxido transparente condutivo). A comparação desses resultados com trabalhos disponíveis na literatura, permite concluir que a fonte amplificadora de potência desenvolvida nesta dissertação possibilita a obtenção de filmes finos de AZO com condutividade e transparência superiores àqueles produzidos com fontes operando em radiofrequência, técnica atualmente disponível e amplamente utilizada no mercado. / The development of thin films deposition techniques allows to increase value and give new features to the materials. Currently, indium doped zinc oxide (ITO) is widely used in the market. However, due to the low availability of the indium in the nature and the high costs involved on its acquisition, alternative elements are being studied for its replacement. Aluminum doped zinc oxide (AZO) stands out as a promising substitute, mainly because of its characteristics, such as high transmissivity, low resistivity and band gap value of 3.37 eV. That allow the application of AZO in the synthesis of thin films semiconductors. In this work, it was developed a prototype of a plasma power source amplifier (FAP) to operate in alternating current (AC) and low frequency (15 - 40 kHz), responsible for initiating and sustaining the electric field used for plasma generation. This FAP was used to deposit AZO thin films by the technique of magnetron sputtering. The analysis of the morphological, optical and electrical characteristics of the AZO films produced in this study resulted in more than 80% transmittance, band gap energy value of 3,82eV, and resistivity of 1,46.10-3 .cm. The thin films synthetized was classified as transparent conductive oxide (TCO). The comparison of these results with the characteristics of similar films avaiable in the bibliography, allows to conclude that the power amplifier source developed in this dissertation makes it possible to obtain thin films of AZO with conductivity and transparency superior to those produced with RF magnetron sputtering, technique currently available and widely used in the market.