Hepatocarcinoma (HCC) é o mais comum tumor maligno primário do fígado. Aurora A é importante durante o ciclo celular, atuando na maturação centrossômica e sua separação, entrada em mitose, montagem de fuso bipolar, alinhamento dos cromossomos na placa metafásica e citocinese. Expressão alterada de Aurora A tem sido associada com o desenvolvimento do tumor e sua superexpressão ocorre em 60% dos HCCs. Inibidores de Aurora quinases têm sido desenvolvidos como drogas antitumorais. 4(4`-Benzamidoanilina)-6,7dimetoxiquizanoline, BADIM, é um recém desenvolvido inibidor da Aurora. Nosso estudo investigou os efeitos de BADIM na linhagem celular HepG2, derivada de HCC, quando tratada com 300, 600 e 1200nm de BADIM por 24 e 48h. Observamos inibição de proliferação, aumento de células tetraplóides, binucleadas e gigantes, bloqueio em G2/M do ciclo celular, alterações nos microtúbulos, mitoses atípicas e apoptose. Por conseguinte, este inibidor é um agente promissor para estudos em HCC, pois atua em pontos críticos relacionados com o processo de tumorigênese. / Hepatocellular carcinoma (HCC) is the most common primary malignant tumor of liver. Aurora A is important during cell cycle, including centrosome maturation and separation, mitotic entry, bipolar-spindle assembly, chromosome alignment on metaphase plate and cytokinesis. Altered expression of Aurora A has been associated with tumor development and its overexpression occurs in 60% of HCC. Aurora kinases inhibitors have been developed as antitumoral drugs. 4(4`-Benzamidoanilino)-6,7-dimethoxiquizanolina, BADIM, is a new Aurora inhibitor. Our study aimed investigates the BADIM effects on HepG2 cell line, derivates of HCC, when treated in 300, 600 and 1200nM for 24 and 48h. We observed inhibition of cell proliferation, increase of tetraploids, binucleated and giant cells, arrest in G2/M cell cycle, microtubules alterations, aberrant cell divisions and apoptosis. Therefore this inhibitor is a promising agent for studies in HCC, since it acts at critical points related to tumorigenesis.

Although a common plant response to environmental gradients, leaf trait plasticity is often uncharted in agroforestry systems. The objective of this study was to examine the effect of a i) local-scale gradient (light, nutrients) induced by shade tree diversity and ii) large-scale gradient (climato-edaphic) induced by altitude on coffee plant response on multiple agroforestry research farms in Costa Rica. Results show large variability of coffee traits: leaf photosynthetic rates, specific leaf area (SLA) and number of fruiting nodes deviate along both gradients. Mean SLA increased with increasing shade tree diversity. However, with increasing altitude, full sun coffee photosynthesized at higher rates than shaded coffee. Concurrently, other coffee leaf physiological and morphological traits differentiated between full sun and shaded coffee with increasing altitude. Results suggest soil moisture and light availability dominate environmental correlates to intraspecific coffee trait plasticity, providing insight to sources of coffee performance variability in monoculture and agroforestry systems.

Although a common plant response to environmental gradients, leaf trait plasticity is often uncharted in agroforestry systems. The objective of this study was to examine the effect of a i) local-scale gradient (light, nutrients) induced by shade tree diversity and ii) large-scale gradient (climato-edaphic) induced by altitude on coffee plant response on multiple agroforestry research farms in Costa Rica. Results show large variability of coffee traits: leaf photosynthetic rates, specific leaf area (SLA) and number of fruiting nodes deviate along both gradients. Mean SLA increased with increasing shade tree diversity. However, with increasing altitude, full sun coffee photosynthesized at higher rates than shaded coffee. Concurrently, other coffee leaf physiological and morphological traits differentiated between full sun and shaded coffee with increasing altitude. Results suggest soil moisture and light availability dominate environmental correlates to intraspecific coffee trait plasticity, providing insight to sources of coffee performance variability in monoculture and agroforestry systems.

De maneira a melhorar o desempenho de um Transistor de Efeito de Campo Metal-Óxido-Semicondutor (MOSFET), o germânio (Ge) é um forte candidato para substituir o silício (Si) como semicondutor, devido a sua alta mobilidade dos portadores de carga. Contudo, o filme de dióxido de germânio (GeO2) sobre Ge é solúvel em água e suas propriedades elétricas inferiores. Nesse sentido, a proposta desta dissertação de Mestrado é oxinitretar termicamente filmes de GeO2 em atmosfera de óxido nítrico (15NO), de maneira a melhorar as propriedades elétricas e físico-químicas dessas estruturas. Inicialmente, as amostras foram limpas quimicamente usando uma mistura de peróxido de hidrogênio (H2O2) e ácido clorídrico + água (HCl + H2O, 4:1). Os filmes de GeO2 foram crescidos termicamente sobre Ge usando atmosfera de oxigênio enriquecido 97% no isótopo de massa 18 (18O), com parâmetros na qual geraram um filme com espessura de ~5 nm. As oxinitretações foram realizadas em um forno térmico rápido com atmosfera de 15NO, nas temperaturas variando de 400-600°C, nos tempos de 1 a 5 minutos. O objetivo da oxinitretação foi criar um filme de oxinitreto de germânio (GeOxNy) com propriedades físico-químicas satisfatórias para a indústria de microeletrônica. Também foram realizados recozimentos térmicos em atmosfera inerte com objetivo de testar a estabilidade térmicas dos filmes de GeOxNy. Análise com Reação Nuclear (NRA) e Espectrometria de Retroespalhamento Rutherford em geometria de canalização (RBS-c) foram utilizadas para quantificar a quantidade total de oxigênio 18O e 16O, respectivamente. NRP também foi utilizada de modo a determinar o perfil de concentração em função da profundidade para as espécies de 18O e 15N. De modo a investigar a composição química das amostras, Espectroscopia de Fotoelétrons induzidos por raio-X (XPS) foi utilizada. Pelas análises por RBS e NRA do 18O, podemos observar que ocorre troca entre os isótopos de 18O e 16O para todas das temperaturas de oxinitretação. Este resultado corrobora com estudos recentes da literatura. Para as amostras oxinitretadas em 5 minutos a 500°C e todas as amostras oxinitretadas a 550°C e 600°C, ocorre troca isotópica completa. Observamos ainda por NRP que o 15N é incorporado mais superficialmente para as temperaturas de oxinitretação até 550°C. Resultados de XPS indicam formação maior de GeOxNy próximos da superfície das amostras e para temperaturas e/ou tempos maiores. Testes de estabilidade térmica indicam que a incorporação de nitrogênio mais próximo das superfície da amostra inibe a dessorção das espécies de GeO. As amostras que não foram oxinitretadas acabam dessorvendo quase por completo o filme de GeO2 quando realizados os recozimentos térmicos. Este efeito do nitrogênio incorporado próximo da superfície tem grande potencial para uso em camadas interfaciais entre semicondutor e dielétricos de porta. / In order to improve the performance of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), germanium is a good candidate to replace silicon as semiconductor due to its higher charge carrier mobility. However, the germanium dioxide (GeO2) film over Ge is water soluble and produces poor electrical characteristics. In this way, this Master dissertation proposes thermal oxinitridation of the GeO2 films in nitric oxide (15NO) atmosphere in order to improve its electrical and physico-chemical characteristics. Samples were first cleaned using a mixture of hydrogen peroxide (H2O2) and hydrogen chloride + water (HCl + H2O, 4:1). GeO2 films were thermally grown on Ge using oxygen enriched in 97% in the isotope of mass 18, which generated ~5 nm thick film. Oxinitridation was performed in a rapid thermal furnace under 15NO atmosphere, at the 400-600°C temperature range, and 1-5 minutes time range. The goal was to form a germanium oxinitride film (GeOxNy) with physico-chemical properties that are satisfactory for microelectronics industry. We also performed thermal annealing in inert atmosphere to test the thermal stability of GeOxNy films. Nuclear Reaction Analysis (NRA) and Rutherford Backscattering Spectrometry in channeled geometry (RBS-c) were used to quantify the total amount of oxygen 18O and 16O, respectively. NRP was also performed to determine the 18O and 15N depth distribution. In order to investigate the chemical composition of the samples, X-ray Photoelectron Spectroscopy (XPS) was performed. RBS and NRA analysis showed isotopic exchange between 18O and 16O for all temperatures investigated. This result corroborates previous literature studies. Samples oxynitrided in 5 minutes at 500°C and all the samples oxinitrided at 550-600°C showed complete isotopic exchange. We also observed by NRP that nitrogen incorporation occurs more superficially until 550°C. XPS results indicate more formation of GeOxNy near the surface of the samples and for higher temperatures and/or time of oxinitredation. Thermal stability results indicated that the nitrogen incorporation near the sample surface inhibit the GeO desorption. On the other hand, samples that were not oxynitrided have almost all the GeO2 desorbed when thermal annealing is performed.

De maneira a melhorar o desempenho de um Transistor de Efeito de Campo Metal-Óxido-Semicondutor (MOSFET), o germânio (Ge) é um forte candidato para substituir o silício (Si) como semicondutor, devido a sua alta mobilidade dos portadores de carga. Contudo, o filme de dióxido de germânio (GeO2) sobre Ge é solúvel em água e suas propriedades elétricas inferiores. Nesse sentido, a proposta desta dissertação de Mestrado é oxinitretar termicamente filmes de GeO2 em atmosfera de óxido nítrico (15NO), de maneira a melhorar as propriedades elétricas e físico-químicas dessas estruturas. Inicialmente, as amostras foram limpas quimicamente usando uma mistura de peróxido de hidrogênio (H2O2) e ácido clorídrico + água (HCl + H2O, 4:1). Os filmes de GeO2 foram crescidos termicamente sobre Ge usando atmosfera de oxigênio enriquecido 97% no isótopo de massa 18 (18O), com parâmetros na qual geraram um filme com espessura de ~5 nm. As oxinitretações foram realizadas em um forno térmico rápido com atmosfera de 15NO, nas temperaturas variando de 400-600°C, nos tempos de 1 a 5 minutos. O objetivo da oxinitretação foi criar um filme de oxinitreto de germânio (GeOxNy) com propriedades físico-químicas satisfatórias para a indústria de microeletrônica. Também foram realizados recozimentos térmicos em atmosfera inerte com objetivo de testar a estabilidade térmicas dos filmes de GeOxNy. Análise com Reação Nuclear (NRA) e Espectrometria de Retroespalhamento Rutherford em geometria de canalização (RBS-c) foram utilizadas para quantificar a quantidade total de oxigênio 18O e 16O, respectivamente. NRP também foi utilizada de modo a determinar o perfil de concentração em função da profundidade para as espécies de 18O e 15N. De modo a investigar a composição química das amostras, Espectroscopia de Fotoelétrons induzidos por raio-X (XPS) foi utilizada. Pelas análises por RBS e NRA do 18O, podemos observar que ocorre troca entre os isótopos de 18O e 16O para todas das temperaturas de oxinitretação. Este resultado corrobora com estudos recentes da literatura. Para as amostras oxinitretadas em 5 minutos a 500°C e todas as amostras oxinitretadas a 550°C e 600°C, ocorre troca isotópica completa. Observamos ainda por NRP que o 15N é incorporado mais superficialmente para as temperaturas de oxinitretação até 550°C. Resultados de XPS indicam formação maior de GeOxNy próximos da superfície das amostras e para temperaturas e/ou tempos maiores. Testes de estabilidade térmica indicam que a incorporação de nitrogênio mais próximo das superfície da amostra inibe a dessorção das espécies de GeO. As amostras que não foram oxinitretadas acabam dessorvendo quase por completo o filme de GeO2 quando realizados os recozimentos térmicos. Este efeito do nitrogênio incorporado próximo da superfície tem grande potencial para uso em camadas interfaciais entre semicondutor e dielétricos de porta. / In order to improve the performance of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), germanium is a good candidate to replace silicon as semiconductor due to its higher charge carrier mobility. However, the germanium dioxide (GeO2) film over Ge is water soluble and produces poor electrical characteristics. In this way, this Master dissertation proposes thermal oxinitridation of the GeO2 films in nitric oxide (15NO) atmosphere in order to improve its electrical and physico-chemical characteristics. Samples were first cleaned using a mixture of hydrogen peroxide (H2O2) and hydrogen chloride + water (HCl + H2O, 4:1). GeO2 films were thermally grown on Ge using oxygen enriched in 97% in the isotope of mass 18, which generated ~5 nm thick film. Oxinitridation was performed in a rapid thermal furnace under 15NO atmosphere, at the 400-600°C temperature range, and 1-5 minutes time range. The goal was to form a germanium oxinitride film (GeOxNy) with physico-chemical properties that are satisfactory for microelectronics industry. We also performed thermal annealing in inert atmosphere to test the thermal stability of GeOxNy films. Nuclear Reaction Analysis (NRA) and Rutherford Backscattering Spectrometry in channeled geometry (RBS-c) were used to quantify the total amount of oxygen 18O and 16O, respectively. NRP was also performed to determine the 18O and 15N depth distribution. In order to investigate the chemical composition of the samples, X-ray Photoelectron Spectroscopy (XPS) was performed. RBS and NRA analysis showed isotopic exchange between 18O and 16O for all temperatures investigated. This result corroborates previous literature studies. Samples oxynitrided in 5 minutes at 500°C and all the samples oxinitrided at 550-600°C showed complete isotopic exchange. We also observed by NRP that nitrogen incorporation occurs more superficially until 550°C. XPS results indicate more formation of GeOxNy near the surface of the samples and for higher temperatures and/or time of oxinitredation. Thermal stability results indicated that the nitrogen incorporation near the sample surface inhibit the GeO desorption. On the other hand, samples that were not oxynitrided have almost all the GeO2 desorbed when thermal annealing is performed.

De maneira a melhorar o desempenho de um Transistor de Efeito de Campo Metal-Óxido-Semicondutor (MOSFET), o germânio (Ge) é um forte candidato para substituir o silício (Si) como semicondutor, devido a sua alta mobilidade dos portadores de carga. Contudo, o filme de dióxido de germânio (GeO2) sobre Ge é solúvel em água e suas propriedades elétricas inferiores. Nesse sentido, a proposta desta dissertação de Mestrado é oxinitretar termicamente filmes de GeO2 em atmosfera de óxido nítrico (15NO), de maneira a melhorar as propriedades elétricas e físico-químicas dessas estruturas. Inicialmente, as amostras foram limpas quimicamente usando uma mistura de peróxido de hidrogênio (H2O2) e ácido clorídrico + água (HCl + H2O, 4:1). Os filmes de GeO2 foram crescidos termicamente sobre Ge usando atmosfera de oxigênio enriquecido 97% no isótopo de massa 18 (18O), com parâmetros na qual geraram um filme com espessura de ~5 nm. As oxinitretações foram realizadas em um forno térmico rápido com atmosfera de 15NO, nas temperaturas variando de 400-600°C, nos tempos de 1 a 5 minutos. O objetivo da oxinitretação foi criar um filme de oxinitreto de germânio (GeOxNy) com propriedades físico-químicas satisfatórias para a indústria de microeletrônica. Também foram realizados recozimentos térmicos em atmosfera inerte com objetivo de testar a estabilidade térmicas dos filmes de GeOxNy. Análise com Reação Nuclear (NRA) e Espectrometria de Retroespalhamento Rutherford em geometria de canalização (RBS-c) foram utilizadas para quantificar a quantidade total de oxigênio 18O e 16O, respectivamente. NRP também foi utilizada de modo a determinar o perfil de concentração em função da profundidade para as espécies de 18O e 15N. De modo a investigar a composição química das amostras, Espectroscopia de Fotoelétrons induzidos por raio-X (XPS) foi utilizada. Pelas análises por RBS e NRA do 18O, podemos observar que ocorre troca entre os isótopos de 18O e 16O para todas das temperaturas de oxinitretação. Este resultado corrobora com estudos recentes da literatura. Para as amostras oxinitretadas em 5 minutos a 500°C e todas as amostras oxinitretadas a 550°C e 600°C, ocorre troca isotópica completa. Observamos ainda por NRP que o 15N é incorporado mais superficialmente para as temperaturas de oxinitretação até 550°C. Resultados de XPS indicam formação maior de GeOxNy próximos da superfície das amostras e para temperaturas e/ou tempos maiores. Testes de estabilidade térmica indicam que a incorporação de nitrogênio mais próximo das superfície da amostra inibe a dessorção das espécies de GeO. As amostras que não foram oxinitretadas acabam dessorvendo quase por completo o filme de GeO2 quando realizados os recozimentos térmicos. Este efeito do nitrogênio incorporado próximo da superfície tem grande potencial para uso em camadas interfaciais entre semicondutor e dielétricos de porta. / In order to improve the performance of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), germanium is a good candidate to replace silicon as semiconductor due to its higher charge carrier mobility. However, the germanium dioxide (GeO2) film over Ge is water soluble and produces poor electrical characteristics. In this way, this Master dissertation proposes thermal oxinitridation of the GeO2 films in nitric oxide (15NO) atmosphere in order to improve its electrical and physico-chemical characteristics. Samples were first cleaned using a mixture of hydrogen peroxide (H2O2) and hydrogen chloride + water (HCl + H2O, 4:1). GeO2 films were thermally grown on Ge using oxygen enriched in 97% in the isotope of mass 18, which generated ~5 nm thick film. Oxinitridation was performed in a rapid thermal furnace under 15NO atmosphere, at the 400-600°C temperature range, and 1-5 minutes time range. The goal was to form a germanium oxinitride film (GeOxNy) with physico-chemical properties that are satisfactory for microelectronics industry. We also performed thermal annealing in inert atmosphere to test the thermal stability of GeOxNy films. Nuclear Reaction Analysis (NRA) and Rutherford Backscattering Spectrometry in channeled geometry (RBS-c) were used to quantify the total amount of oxygen 18O and 16O, respectively. NRP was also performed to determine the 18O and 15N depth distribution. In order to investigate the chemical composition of the samples, X-ray Photoelectron Spectroscopy (XPS) was performed. RBS and NRA analysis showed isotopic exchange between 18O and 16O for all temperatures investigated. This result corroborates previous literature studies. Samples oxynitrided in 5 minutes at 500°C and all the samples oxinitrided at 550-600°C showed complete isotopic exchange. We also observed by NRP that nitrogen incorporation occurs more superficially until 550°C. XPS results indicate more formation of GeOxNy near the surface of the samples and for higher temperatures and/or time of oxinitredation. Thermal stability results indicated that the nitrogen incorporation near the sample surface inhibit the GeO desorption. On the other hand, samples that were not oxynitrided have almost all the GeO2 desorbed when thermal annealing is performed.

A vulnerable group in society is people with ASD (autism spectrum disorders) or autism. This group seems to increase, mainly due to genetic factors but also environmental problems. Medical research has accelerated in the U.S. and Europe. The biggest problem for people with disabilities is the inability to communicate, both verbally and socially. Parallel communication is growing strongly, a technique that can help these people much, if only there were an adaptation to the needs. There are already technical communication aids developed for people with autism. But they do not seem to fit the target group's communication needs well enough. These aids are designed to handle a superficial communication and people with autism do not understand this type of communication at all. People with ASD would rather appreciate the deeper relationships that can support them on important issues, such as to clarify the context for them are hard to understand. E.g. "inside" and "beyond" could tell that there are a number of houses behind them closer to the houses. They need a different type of support and this support must be provided by close caregivers. Closely support by caregivers seems to be essential for successful development. In other words, they do not have the extensive list of contacts that are in their communication tool today. In my theses, I look primarily at the core needs behind the communication of people with autism. But I also present a design proposal in the form of some sketches on the basis of these needs. The reason for focusing on the analysis is that the majority of existing technical communication aids never seems to have questioned the basis for the decisions shaping the design, i.e. the real needs of the people with ASD. Too often wrong design decisions seem to be made mainly due to an incorrect analysis. Several functions ought to coincide in a single tool that can support the people with ASD to talk, think clearer thoughts, to reflect, formulate an opinion and dream. I would like them to reach deeper thoughts than was possible so far. The features are not new but the combination is. I count to seven features which I consider to be crucial for my result: “Emphasized transfer”, “transparency”, “structure à la Talking Mats”, “imaging”, “digital camera”, “the real meeting”, and “caregivers as important role models”. The communicators should be geographically close to each other and carry one’s own portable technical communication aids, their “BeAKKta”, the name of this design proposal. My result identifies needs of disabled people in their communication, and gives suggestions on how to respond to those needs by presenting different sketches from an analysis. The sketches show up a new design for this communication tool, both in terms of form and function. Lovisa, my daughter and her communication problem is the origin of the trials and she is also the one who gave me both insights and inspiration. / Personer med autism är en utsatt grupp i samhället – en grupp som tycks öka främst på grund av genetiska faktorer men också på grund av miljöfaktorer. Den medicinska forskningen intensifieras både i USA och i Europa. Det största problemet för dessa funktionshindrade handlar om en oförmåga att kommunicera, såväl verbalt som socialt. Parallellt utvecklas kommunikationstekniken starkt, en teknik som skulle kunna hjälpa dessa personer avsevärt om bara det fanns en anpassning till deras behov. Det finns ju visserligen redan tekniska kommunikationshjälpmedel utvecklade för personer med autism. Det är bara det att dessa fortfarande inte passar målgruppens behov av kommunikation särskilt väl. Hjälpmedlen är konstruerade att hantera en mer ytlig kommunikation, det vill säga en kommunikationsform som personer med autism inte använder, än mindre förstår sig på. De vill ofta istället ha en djupare relation som kan stötta dem i viktigare frågor. Det kan till exempel handla om att reda ut huruvida det finns ett ”inuti” och ett ”bortom”; att det finns många hus bortom dem som man kan se närmast. Att se stora sammanhang är nästintill obegripligt för dem. Här behövs verklig hjälp och stöttningen bör förmedlas av en nära vän. Den omfattande kontaktlista som nuvarande kommunikationshjälpmedel tillhandahåller, står alltså inte högt i kurs. I mitt magisterarbete tittar jag framför allt på de centrala behoven bakom kommunikationen hos personer med autism. Men jag presenterar också ett designförslag i form av några enklare skisser med utgångspunkt i just dessa behov. Anledningen till att fokus ligger på analysskedet är att flertalet hittillsvarande tekniska kommunikationshjälpmedel aldrig tycks ha ifrågasatt grunden till de beslut som formar designen det vill säga behoven hos de funktionshindrade personerna. Alltför ofta tas fel designbeslut på grund av en grundlös analys. Flera funktioner sammanfogas här inom ett och samma hjälpmedel som kan stödja de funktionshindrade att tala, tänka klarare tankar, att reflektera, formulera sin åsikt och att drömma. Jag vill att de ska nå djupare tankar än vad som hittills varit möjligt. Funktionerna är identifierade men finns inte inom ett och samma hjälpmedel. Sju funktioner sammanfogas inom ett och samma hjälpmedel: ”Betonad överföring”, ”överblickbarhet”, ”struktur à la Talking Mats”, ”bildhantering”, ”digitalkamera”, ”reellt möte” samt ”närstående som viktiga förebilder”. Båda parter bör befinna sig geografiskt nära varandra och båda måste ha med sig sin egen ”BeAKKta”. Jag identifierar kommunikationsbehoven hos personer med autism och ger förslag på hur behoven skulle kunna mötas genom analys och skisser. Resultatet blir en ny design som sammanför tidigare förvisso identifierade funktioner, varav dock fåtalet utvecklats med tanke på den digitala tekniken. Lovisa, min dotter och hennes brist på kommunikationsförmåga, är upprinnelsen till mitt försök och det är också hon som givit mig både insikter och inspiration. / Phone number: 46709981048

A study of defects in semiconductors is vital as defects tend to influence device operation by modifying their electrical and optoelectronic properties. This influence can at times be desirable in the case of fast switching devices and sometimes undesirable as they may reduce the efficiency of optoelectronic devices. ZnO is a wide bandgap material with a potential for fabricating UV light emitting diodes, lasers and white lighting devices only after the realization of reproducible p-type material. The realization of p-type material is greatly affected by doping asymmetry. The self-compensation behaviour by its native defects has hindered the success in obtaining the p-type material. Hence there is need to understand the electronic properties, formation and annealing-out of these defects for controlled material doping. Space charge spectroscopic techniques are powerful tools for studying the electronic properties of electrically active defects in semiconductors since they can reveal information about the defect “signatures”. In this study, novel Schottky contacts with low leakage currents of the order of 10-11 A at 2.0 V, barrier heights of 0.60 – 0.80 eV and low series resistance, fabricated on hydrogen peroxide treated melt-grown single crystal ZnO samples, were demonstrated. Investigations on the dependence of the Schottky contact parameters on fabrication techniques and different metals were performed. Resistive evaporation proved to produce contacts with lower series resistance, higher barrier heights and low reverse currents compared to the electron-beam deposition technique. Deep level transient spectroscopy (DLTS) and Laplace-DLTS have been employed to study the electronic properties of electrically active deep level defects in ZnO. Results revealed the presence of three prominent deep level defects (E1, E2 and E3) in the as-received ZnO samples. Electron-beam deposited contacts indicated the presence of the E1, E2 and E3 and the introduction of new deep level defects. These induced deep levels have been attributed to stray electrons and ionized particles, present in the deposition system during contact fabrication. Exposure of ZnO to high temperatures induces deep level defects. Annealing samples in the 300°C – 600°C temperature range in Ar + O2 induces the E4 deep level with a very high capture cross-section. This deep level transforms at every annealing temperature. Its instability at room temperature has been demonstrated by a change in the peak temperature position with time. This deep level was broad, indicating that it consists of two or more closely spaced energy levels. Laplace-DLTS was successfully employed to resolve the closely spaced energy levels. Annealing samples at 700°C in Ar and O2 anneals-out E4 and induces the Ex deep level defect with an activation enthalpy of approximately 160 – 180 meV. Vacuum annealing performed in the 400°C – 700°C temperature range did not induce any deep level defects. Since the radiation hardness of ZnO is crucial in space applications, 1.6 MeV proton irradiation was performed. DLTS revealed the introduction of the E4 deep level with an activation enthalpy of approximately 530 meV, which proved to be stable at room temperature and atmospheric pressure since its properties didn’t change over a period of 12 months. / Thesis (PhD)--University of Pretoria, 2013. / Physics / unrestricted

Hepatocarcinoma (HCC) é o mais comum tumor maligno primário do fígado. Aurora A é importante durante o ciclo celular, atuando na maturação centrossômica e sua separação, entrada em mitose, montagem de fuso bipolar, alinhamento dos cromossomos na placa metafásica e citocinese. Expressão alterada de Aurora A tem sido associada com o desenvolvimento do tumor e sua superexpressão ocorre em 60% dos HCCs. Inibidores de Aurora quinases têm sido desenvolvidos como drogas antitumorais. 4(4`-Benzamidoanilina)-6,7dimetoxiquizanoline, BADIM, é um recém desenvolvido inibidor da Aurora. Nosso estudo investigou os efeitos de BADIM na linhagem celular HepG2, derivada de HCC, quando tratada com 300, 600 e 1200nm de BADIM por 24 e 48h. Observamos inibição de proliferação, aumento de células tetraplóides, binucleadas e gigantes, bloqueio em G2/M do ciclo celular, alterações nos microtúbulos, mitoses atípicas e apoptose. Por conseguinte, este inibidor é um agente promissor para estudos em HCC, pois atua em pontos críticos relacionados com o processo de tumorigênese. / Hepatocellular carcinoma (HCC) is the most common primary malignant tumor of liver. Aurora A is important during cell cycle, including centrosome maturation and separation, mitotic entry, bipolar-spindle assembly, chromosome alignment on metaphase plate and cytokinesis. Altered expression of Aurora A has been associated with tumor development and its overexpression occurs in 60% of HCC. Aurora kinases inhibitors have been developed as antitumoral drugs. 4(4`-Benzamidoanilino)-6,7-dimethoxiquizanolina, BADIM, is a new Aurora inhibitor. Our study aimed investigates the BADIM effects on HepG2 cell line, derivates of HCC, when treated in 300, 600 and 1200nM for 24 and 48h. We observed inhibition of cell proliferation, increase of tetraploids, binucleated and giant cells, arrest in G2/M cell cycle, microtubules alterations, aberrant cell divisions and apoptosis. Therefore this inhibitor is a promising agent for studies in HCC, since it acts at critical points related to tumorigenesis.

Cut flowers are products that have become a symbol of joy, sorrow and wealth. However, consumption contributes to various environmental problems, such as greenhouse gas emissions and leakage of nutrients and pesticides. This study aims to investigate the environmental impact of outdoor-grown cut flowers from a sustainability perspective in Sweden. The questions answered are which aspects of the cut flower lifecycle have the greatest environmental impact, what the cut flower growers think of the cut flower industry and its sustainability and how their work can become more sustainable. The study was conducted through semi-structured interviews with eight businesses that grow field-grown cut flowers and a literature review focusing on the environmental impact of cut flowers from a life cycle perspective. The results from the literature review show that the main environmental and climate aspects from a life cycle perspective are transport, heating through fossil fuels and the use of fertilizers and chemical pesticides. The results from the interviews show that challenges with the cut flower industry are origins of seeds, lack of knowledge and behavior and consumption patterns. Opportunities consist of growing demand, good quality and being able to offer a more sustainable product. Swedish field-grown cut flowers can be considered a sustainable alternative to imported ones due to shorter transport and the difference in the use of nutrients and chemicals. Although, more transparency, knowledge and collaboration will be needed in the industry for long-term sustainable development. Measures that can be implemented to promote the production and consumption of Swedish sustainable cut flowers are political incentives and possibly a certification or labeling.