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Made available in DSpace on 2014-10-09T12:51:47Z (GMT). No. of bitstreams: 0 / Made available in DSpace on 2014-10-09T14:10:00Z (GMT). No. of bitstreams: 0 / As cirurgias radioguiadas, utilizando sondas com detectores de radiação, têm sido destaque na área médica na última década. Esta técnica consiste na marcação de lesões com uma substância radioativa, que injetada no paciente, concentra-se no tumor e auxilia a sua localização durante o ato cirúrgico. Entre as cirurgias radioguiadas, a identificação e exame do linfonodo sentinela, tem revolucionado a conduta de neoplasias em estádio inicial, quando estas estão sendo disseminadas pela via linfática. As condições impostas por uma cirurgia e a proximidade entre alguns linfonodos, exige das sondas, reduzidos diâmetros e capacidade de identificação individual destes linfonodos marcados com um radiofármaco. O mercado internacional fornece sondas adequadas com cristais cintiladores e com semicondutores de telureto de cádmio, CdTe, mas que algumas vezes carecem de uma pronta assistência técnica no mercado brasileiro devido a todo o conjunto ser importado. Este trabalho desenvolveu sondas com tecnologia nacional, utilizando cristais cintiladores de iodeto de césio dopado com tálio, CsI(Tl) e, em substituição aos cristais semicondutores de CdTe, o cristal de brometo de tálio, TlBr que é um meio semicondutor detector em desenvolvimento mundialmente, com vantagens em relação ao CdTe. Ambos os cristais utilizados foram crescidos no IPEN. Toda a eletrônica necessária, e em especial, o pré-amplificador, que constituía também um fator limitante para desenvolvimento destes tipos de sonda no país, foram desenvolvidos com componentes encontrados no mercado nacional. Medidas sistemáticas de resolução espacial, seletividade espacial, sensibilidade máxima e qualidade da blindagem foram realizadas para as sondas desenvolvidas. Os resultados mostraram que dois modelos de sonda, uma com o cristal de CsI(Tl) e outra com o semicondutor de TlBr atenderam as qualidades sugeridas pela literatura internacional para sondas cirúrgicas radioguiadas. / Tese (Doutoramento) / IPEN/T / Instituto de Pesquisas Energeticas e Nucleares - IPEN/CNEN-SP

Dans le combustible nucléaire UO2, utilisé dans les réacteurs à eau pressurisée (REP), le Cs, élément volatil compte parmi les produits de fission (PF) les plus abondamment produits. De plus, l’isotope 137Cs est connu pour être particulièrement radiotoxique. En cas d’accident, le relâchement de cet isotope est donc problématique et son étude est cruciale pour la sûreté nucléaire. En France, l’IRSN (Institut de Radioprotection et de sureté nucléaire) développe des codes de prédictions du relâchement des PF depuis le combustible, tels que MFPR (Module for Fission Product Release). Ces codes nécessitent d’être alimentés par des données fondamentales sur le comportement des PF. Ainsi, la connaissance des coefficients de diffusion de ces éléments dans la matrice combustible en fonction de la température et de l’atmosphère (pouvant oxyder le combustible en UO2+x) est primordiale. Dans ce contexte, l’objectif de cette thèse, menée en collaboration avec l’IRSN, est d’étudier la migration du Cs dans le dioxyde d’uranium stœchiométrique et sur-stœchiométrique, en conditions représentatives d’un fonctionnement normal et accidentel d’un REP, avec et sans la présence de Mo. Ce dernier est un PF abondamment produit qui agit comme tampon d’oxydation du combustible et est capable d’avoir des interactions chimiques avec le césium. De telles interactions pourraient affecter le comportement du Cs, et donc son relâchement depuis le combustible. Il a donc été nécessaire d’envisager les éventuelles interactions entre le Cs et le Mo dans le cadre de notre étude. La démarche expérimentale a consisté à simuler la présence de Cs et/ou Mo dans des pastilles d’UO2 ou d’UO2+x. par implantations ioniques des isotopes stables 133Cs et/ou 95Mo. Des recuits à haute température (950-1600°C) sous atmosphère contrôlée ou des irradiations en régime électronique couplées en température ont ensuite été réalisés, permettant d’induire la migration du Cs et du Mo. La spectrométrie de masse à ionisation secondaire (SIMS) a été utilisée pour suivre l’évolution des profils de concentration des éléments implantés, permettant d’extraire les coefficients de diffusion apparents du Cs dans UO2 et UO2+x en fonction des différents traitements. Une étude complémentaire de la microstructure a été réalisée par spectroscopie Raman et microscopie électronique en transmission (MET). Le Cs est très mobile dans UO2 sous atmosphère réductrice même si une partie et piégée sous forme de bulles à faible profondeur. Nous avons mis en évidence que la présence de Mo diminuait fortement cette mobilité. La même tendance est observée dans UO2+x sous atmosphère oxydante. Néanmoins les mécanismes d’immobilisation du Cs par le Mo diffèrent selon les conditions redox de recuit. En atmosphère réductrice, les expériences MET ont montré la formation de paires bulles de Cs-précipités métalliques de Mo dans les échantillons co-implantés. En atmosphère oxydante, l’absence de mobilité du Cs pourrait être liée à l’oxydation du Mo rendant possible des interactions chimiques Cs-Mo. Pour la première fois, des potentiels semi-empiriques ont été utilisés pour réaliser des calculs de dynamique moléculaire sur la diffusion du Cs et du Mo dans UO2 et UO2+x. Ces calculs nous ont aussi permis de caractériser les mécanismes de diffusion de l’oxygène dans ces matériaux en présence de ces deux PF / In the nuclear fuel UO2, which is widely used in Pressurized Water Reactor (PWR), Cs is a volatile element and is one of the most abundant fission product (FP). Furthermore, 137Cs is known to be highly radiotoxic. During a hypothetical accident, release of Cs would be particularly problematic for the environment. Hence, study of this element is of major concern for nuclear safety. To assess this issue, the French nuclear safety institute (IRSN) develops codes to predict FP release from nuclear fuel in normal and accidental conditions. This code requires fundamental data on FP behavior such as diffusion coefficient of these elements in UO2 as a function of temperature and atmosphere conditions (leading to UO2+x formation in oxidative conditions). The aim of this PhD, supported by the IRSN, is to study Cs migration in stoichiometric and hyper-stoichiometric uranium dioxide with and without the presence of Mo, in normal and accidental conditions of a PWR. This latter element is also an abundant FP, which is important to consider because it acts as an oxygen buffer in the fuel and may interact chemically with Cs. Such interactions may affect Cs behavior, hence its release from the fuel. Therefore, Cs-Mo interactions are considered in our study. The experimental procedure consists in simulating the Cs and/or Mo presence in UO2 and UO2+x pellets by ion implantation of stable isotopes 133Cs and/or 95Mo. Then, high temperature annealing (950 °C - 1600 °C) under controlled atmosphere or electronic excitations induced by irradiation coupled with temperature are performed to induce Cs and Mo migration. Secondary Ion Mass Spectrometry (SIMS) is used to follow the concentration profile evolution of these elements, allowing extracting effective diffusion coefficients of Cs in UO2 and UO2+x as a function of irradiation or thermal treatment. Microstructure characterizations were made by Raman spectroscopy and transmission electron microscopy (TEM). We show that Cs is mobile in UO2 under reducing atmosphere, even though some of the Cs is trapped in Cs-bubbles located near the surface. We evidence that Mo presence prevents Cs to be mobile. The same tendency is observed in UO2+x under oxidizing atmosphere. Nevertheless, Cs immobilization mechanisms in presence of Mo vary upon redox conditions used during annealing. In reducing conditions, TEM experiments showed formation of Cs bubbles associated with Mo metallic precipitates in co-implanted samples. In oxidative conditions, absence of Cs mobility could be explained by Mo oxidation leading to possible Cs-Mo chemical interactions. For the first time, semi-empirical potentials were used to perform molecular dynamic (MD) calculations on Cs and Mo diffusion in UO2 and UO2+x. These simulations also allowed characterizing oxygen diffusion mechanisms in these matrixes in presence of Cs and Mo

Ce travail de thèse porte sur la conception, la réalisation et l'étude de sources laser à semi-conducteur de haute cohérence, émettant à 894 nm, pour application aux horloges atomiques Césium compactes pompées optiquement, dans un contexte de développement industriel. Nous nous intéressons plus particulièrement aux lasers à émission par la tranche, dits "Distributed-Feedback" (DFB), pompés électriquement. L'objectif est d'obtenir un laser monomode en fréquence, à faible seuil, à rendement optique élevé et de largeur de raie inférieure à 1 MHz. Nous traitons d'abord de la conception et de la caractérisation au 1er ordre des diodes DFB, jusqu'à leur mise en modules pour horloge, puis nous effectuons une étude approfondie des propriétés physiques de l'émission laser en terme de cohérence temporelle, en introduisant une nouvelle méthode universelle de caractérisation du bruit de fréquence optique. Enfin, nous nous intéressons aux propriétés spectrales de l'émission en configuration d'asservissement sur une raie de fluorescence du Césium ("Dither-Locking"). Nous montrons que les propriétés intrinsèques du composant satisfont aux exigences du système industriel tel qu'il a été défini lors de l'étude. / This PhD work deals with the design, the fabrication and the study of high-coherence semiconductor laser sources emitting at 894 nm, for application to compact, optically-pumped cesium atomic clocks in an industrial context. We are particularly interested in the electrically pumped "Distributed-Feedback" in-plane laser diodes (DFB). The aim is to obtain a low-threshold, single-mode laser with high optical efficiency and a linewidth of less than 1 MHz. We first deal with the design and first-order characterization of the DFB diodes until they are put into modules for the clock. We then carry out an in-depth study of the physical properties of the laser emission in terms of coherence time. For that purpose, a new universal method for characterizing the optical frequency noise is introduced. Finally, we look further into the spectral properties of the emission in a servo configuration on a fluorescence line of the cesium ("Dither-Locking"). We show that the intrinsic properties of the component satisfy the requirements of the industrial system as defined in the study.

The photocathode is one of the key components of particle accelerator facilities that provides electrons for experiments in many disciplines such as biomedicine, security imaging, and condensed matter physics. The requirements for the electron emitting material, the so-called photocathode, are rather high because these materials should provide a high quantum efficiency, a low thermal emittance, a fast response, and a long operational lifetime. At present, none of the state-of-the-art photocathodes can fully meet all the desired requirements. Therefore, new materials that can be used as potential photocathodes are urgently needed for future developments in accelerator research. Semiconductor photocathodes such as cesium telluride are the preferred materials in particle accelerators. These photocathodes provide high quantum efficiencies of above 10 %, making them highly attractive. The crystal growth of cesium telluride, as a compound semiconductor photocathode, requires the deposition of cesium and tellurium on a suitable substrate with an ideal chemical ratio, which seems elaborate and difficult to handle. In contrast, III-V semiconductors, such as gallium arsenide and gallium nitride (GaN), represent another type of semiconductor photocathode. These commercially available semiconductors are already grown on a substrate and only require a thin film of cesium and optional oxygen to obtain a photocathode. An atomically clean surface is necessary to achieve a negative electron affinity surface, which is the main prerequisite for high quantum efficiency. In this work, p-GaN grown on sapphire by metal-organic chemical vapor deposition, was wet chemically cleaned, and transferred into an ultra-high vacuum chamber, where it underwent a subsequent thermal cleaning. The cleaned p-GaN samples were activated with Cs to obtain p-GaN:Cs photocathodes and their performance was monitored with respect to their quality, especially concerning their quantum efficiency and storage lifetime. The surface topography and morphology were examined ex-situ by atomic force microscopy and scanning electron microscopy in combination with energy dispersive X-ray spectroscopy. Treatments at different temperatures resulted in various quantum efficiency values and storage lifetimes. Moderate temperatures of 400–500 °C were found to be more beneficial for the p-GaN surface quality, which was reflected by achieving higher quantum efficiency values. After the thermal cleaning, the samples were activated with a thin layer of cesium at an average pressure of 1 x E-9 mbar. The surface morphology was studied with scanning electron microscopy and energy dispersive X-ray spectroscopy after the samples were thermally cleaned and activated with cesium. The results showed that the surface appeared inhomogeneous when the samples were cleaned at a high temperature above 600 °C. A thermal cleaning from the back side through the substrate represented another possibility but did not yield higher quantum efficiency values. An in-situ analysis method facilitates following and understanding the changes in the surface electronic states before, during, and after any treatment of p-GaN:Cs photocathodes. For this purpose, an X-ray photoelectron spectrometer was applied that was built into an ultra-high vacuum system to prepare and characterize photocathodes. It allowed the in-situ monitoring of the photocathode surfaces beginning immediately after their cleaning and throughout the activation and degradation processes. The realization of the adaption of an X-ray photoelectron spectroscopy chamber to the preparation chamber presented a significant constructional challenge. Thus, this work paid special attention to the technical aspects of in-situ sample transportation between these chambers without leaving the ultra-high vacuum environment. The p-GaN surface was cleaned with different solutions and studied by X-ray photoelectron spectroscopy and atomic force microscopy, revealing that cleaning with a so-called 'piranha' solution in combination with rinsing in ethanol works best for the p-GaN surface. A cleaning step that solely uses ethanol is also possible and represents a simple cleaning procedure that is manageable in all laboratories. Afterward, the cleaned p-GaN samples underwent a subsequential thermal vacuum cleaning at various temperatures to achieve an atomically clean surface. Each treatment step was followed by X-ray photoelectron spectroscopy analysis without leaving the ultra-high vacuum environment, revealing residual oxygen and carbon on the p- GaN surface. A thermal treatment under vacuum did not entirely remove these organic contaminations, although the thermal cleaning reduced their peak intensities. The remaining oxygen and carbon contaminants were assumed to be residuals derived from the metal-organic chemical vapor deposition process. After the cesium activation, a shift toward a higher binding energy was observed in the X-ray photoelectron spectroscopy spectra of the related photoemission peaks. This shift indicated that the cesium was successfully adsorbed to the p-GaN surface. Before the cesium activation, adventitious carbon at a binding energy of approximately 284 eV was found, which was also present after the cesium activation but did not shift in its binding energy. It was also shown that the presence of remaining carbon significantly influenced the photocathode’s quality. After the cesium deposition, a new carbon species at a higher binding energy (approximately 286 eV) appeared in the carbon 1s spectrum. This new species showed a higher binding energy than adventitious carbon and was identified as a cesium carbide species. This cesium carbide species grew over time, resulting in islands on the surface. The X-ray photoelectron spectroscopy data facilitated the elucidation of the critical role of thiscesium carbide species in photocathode degradation. Typically, the quantum efficiency of photocathodes decays exponentially. Conversely, an immense quantum efficiency loss was observed after the p-GaN:Cs photocathodes were studied by X-ray photoelectron spectroscopy. The origin of the quantum efficiency loss derived from X-rays as an external influence and was not caused by the sample’s transportation. Therefore, potential X-ray damages to the p-GaN:Cs photocathodes were investigated. These experiments showed that the adsorbed cesium and its adhesion to the p-GaN surface were strongly influenced by X-ray irradiation. The cesium photoemission peaks shifted toward a lower binding energy, while the relative cesium concentration did not. This shift indicated that X-ray irradiation accelerated the external aging of the p-GaN photocathodes and thus it was proposed to use lower X-ray beam power or cool the samples to prevent X-ray damage to cesiated photocathodes. This work shows that an exclusive activation with cesium is feasible and that a re-activation of the same sample is possible. Quantum efficiency values of 1–12% were achieved when the p-GaN, grown on sapphire, was activated. The capability of an X-ray photoelectron spectroscopy analysis allowed the in-situ monitoring of the photocathode surface and shed light on the surface compositions that changed during the photocathodes’ degradation process.

The exact exchange-correlation kernel is a functional derivative of the exact time-dependent exchange-correlation (XC) potential with respect to the time-dependent density, evaluated at the ground-state density. As the XC potential is not known, the exact kernel is also unavailable. Therefore, it must be modeled either using many-body perturbation theory or by satisfying the exact constraints for various prototype systems such as the paradigm uniform electron gas (UEG). The random phase approximation (RPA) neglects the kernel, therefore, fails to provide the accurate ground- and excited-state properties for various systems from a simple uniform electron gas to more complex periodic ones. There are numerous corrections to RPA available, including kernel-corrected RPA, often called the beyond-RPA (bRPA) methods. In this work, we employed various bRPA methods for a diverse set of systems together with RPA. At first, we applied RPA based methods to study the phase stability of the cesium halides. Cesium halides phase stability is one of the stringent tests for a density functional approximation to assess its accuracy for dispersion interaction. Experimentally, CsF prefers the rocksalt (B1) phase, while the other halides CsCl, CsBr, and CsI prefer the cesium chloride (B2) phase. Without dispersion interaction, PBE and PBE0 predict all halides to prefer the B1 phase. However, all RPA based methods predict the experimental observations. The bRPA methods usually improve the quantitative prediction over RPA for the ground-state equilibrium properties of cesium halides. Next, we explored binary intermetallic alloys, where we showed that RPA successfully predicts the accurate formation energies of weakly bonded alloys. However, a kernel corrected RPA is needed when dealing with strongly bonded alloys with partially filled d-band metals. We utilized the renormalized ALDA (rALDA) and rAPBE kernel as bRPA methods. Exact constraints and appropriate norms such as the uniform electron gas are very useful to construct various approximations for the exchange-correlation potentials in the ground-state, and the exchange-correlation kernel in the linear-response theory within the TDDFT. These mathematical formulations not only guide us to formulate more robust nonempirical methods, but they also have more predictive power. We showed the importance of these constraints by calculating plasmon dispersion of the uniform electron gas using the non-local, energy-optimized (NEO) kernel using only a few constraints. More predictive power comes with more constraint satisfaction. As a result, we developed a new wavevector- and frequency-dependent exchange-correlation kernel that satisfies all the constraints that it should satisfy with a real frequency. It gives accurate ground-state correlation energy and describes the charge density wave in low-density UEG. It also predicts an accurate plasmon dispersion with a finite lifetime at wavevectors less than the critical one, where the plasmon dispersion meets the electron-hole continuum. / Physics

<p>   </p> <p>Colloidal cesium lead bromide (CsPbBr₃) quantum dots (QDs) have emerged as an exciting class of quantum emitters due to their near-unity quantum yields, large oscillator strengths, and long coherence time. Ordered superlattices (SLs) grown from these QDs exhibit emergent properties resulting from their assembly. In this work, we explore the self-assembly, disorder, and superradiant properties of 3D superlattices of CsPbBr₃ to understand how structural heterogeneity influences optical properties.</p> <p>A thorough understanding of the competition between coherence and dephasing from phonon scattering and energetic disorder is currently lacking in the literature. Here, we present an investigation of exciton coherence in perovskite QD solids using temperature-dependent photoluminescence linewidth and lifetime measurements. The properties of perovskite QDS described above should also enable them to overcome hurdles experienced by other materials that limit solid-state superradiance, such as fast dephasing processes from inherent disorder and thermal fluctuations. Our results demonstrate that excitons can coherently delocalize in highly ordered CsPbBr₃ superlattices leading to superradiant emission. We observe loss of coherence and exciton localization to a single QD at higher temperatures, resulting from scattering by optical phonons. At low temperatures, static disorder and defects limit exciton coherence, and a wide range of coherence numbers are observed across a self-assembled sample of SLs. These results highlight the promise and challenge in achieving long-range coherence in perovskite QD solids.</p> <p>A thorough understanding of structural heterogeneity in CsPbBr₃ quantum dot superlattices is necessary for the realization of robust exciton coherence in these systems. 3D SLs self-assemble from a colloidal solution of cubic QDs as the solvent evaporates, leading to SLs ranging widely in macroscopic size, shape, and aspect ratio. Scanning transmission electron microscopy (STEM) coupled to fast-Fourier transform (FFT) analysis is utilized to characterize the structural properties of individual SLs, such as the average constituent quantum dot size, size dispersity, and number of crystalline domains. Analysis reveals that SLs are structurally heterogeneous but tend to have a narrower size distribution than the precursor solution due to size selection that occurs during evaporative self-assembly. We directly correlate STEM-FFT structural properties to low-temperature photoluminescence spectra for individual SLs, demonstrating that substructure in the photoluminescence peak arises from multiple, locally-ordered domains within the SL. In addition, we show that long-range structural disorder in a SL does not necessarily impact short-range phenomena such as exciton delocalization.</p> <p>  </p>

Nanophotonische Systeme sind eine leistungsfähige Plattform für die Untersuchung von Licht-Materie-Wechselwirkungen. In solchen Systemen bricht die übliche Beschreibung einer elektromagnetischen Welle als eine Welle, die in Bezug auf ihre Ausbreitungsrichtung transversal polarisiert ist, zusammen. Dies ist auf die Einengung der geführten Lichtfelder zurückzuführen, welche zu einer longitudinalen Komponente der elektromagnetischen Felder führt. In dieser Arbeit nutzen wir dies in Verbindung mit unterschiedlichen Kopplungsstärken von Cäsiumatomen an \sigma^- und \sigma^+ polarisiertes Licht, um das Prinzip neuartiger nicht-reziproker optischer Bauelemente zu demonstrieren. Im ersten Teil dieser Arbeit demonstrieren wir die nicht-reziproke Verstärkung von fasergeführtem Licht mit Hilfe von Raman-Verstärkung durch spinpolarisierte Cäsiumatome, die an die Nanofasertaille eines verjüngten Faserabschnitts gekoppelt sind. Wir zeigen, dass unser neuartiger Mechanismus kein externes Magnetfeld benötigt und dass wir die Richtung der Verstärkung vollständig über den atomaren Spinzustand kontrollieren können. Darüber hinaus nutzen wir die chirale Licht-Materie-Wechselwirkung in unserem System, um einen nicht-reziproken antisymmetrischen optischen Phasenschieber zu realisieren. Diese Ergebnisse tragen zur Etablierung einer neuen Klasse von spin-gesteuerten, nicht-reziproken integrierten optischen Bauelementen bei und können den Aufbau komplexer optischer Netzwerke vereinfachen. In einem weiteren Forschungsprojekt tragen wir zum grundlegenden Verständnis von Atomen bei, indem wir die Lebensdauer eines angeregten Cäsiumzustands präzise messen. Wir messen die Lebensdauer des Cäsium 5D_{5/2} Zustands im freien Raum. Wir finden eine Lebensdauer von 1353(5) ns, die mit einer aktuellen theoretischen Vorhersage übereinstimmt. Unsere Messung trägt dazu bei, eine seit langem bestehende Unstimmigkeit zwischen verschiedenen experimentellen und theoretischen Ergebnissen zu beseitigen. / Nanophotonic systems are a powerful platform for the study of light-matter interactions. In such systems, the common description of an electromagnetic wave as a wave that is transversely polarized with respect to its propagation direction breaks down. This is due to the tight confinement of the guided light fields, which leads to a longitudinal component of the electromagnetic fields. In this thesis, we use this in conjunction with different coupling strengths of cesium atoms to \sigma^- and \sigma^+ polarized light to provide proof-of-principle demonstrations of novel non-reciprocal optical devices. In the first part of this thesis, we demonstrate non-reciprocal amplification of fiber-guided light using Raman gain provided by spin-polarized cesium atoms that are coupled to the nanofiber waist of a tapered fiber section. We show that our novel mechanism does not require an external magnetic field and that it allows us to fully control the direction of amplification via the atomic spin state. Moreover, we use the chiral light-matter interaction in our system to implement a non-reciprocal antisymmetric optical phase shifter. These results contribute to establishing a new class of spin-controlled, non-reciprocal integrated optical devices and may simplify the construction of complex optical networks. In an additional research project, we also contribute to the fundamental understanding of atoms by precisely measuring the lifetime of an excited cesium state. We measure the lifetime of the cesium 5D_{5/2} state in free space. We find a lifetime of 1353(5) ns, in agreement with a recent theoretical prediction. Our measurement contributes to resolving a long-standing disagreement between several experimental and theoretical results.

No description available.

Metal/semiconductor interfaces, particularly those involving Si, are of great technological and scientific interest. In atomically abrupt interfaces, many properties are determined by interatomic interactions over a few layers, i.e., over ~1 nanometer. The initial stages of growth of an atomic layer related to structural and electronic properties are thus important to thin film behavior. Surface science studies on metal-semiconductor systems often lead to contradictory conclusions regarding bonding sites and even whether the first layer is metallic or not. A key piece of information that must be consistent with any study is the number of atoms per unit area in the first layer, which is difficult to assess directly. Alkali-metal-semiconductor systems have been studied as model abrupt interfaces for several years. Novel effects, such as electron localization, were observed. Still, determinations of absolute coverage have been lacking. This dissertation describes results of absolute coverage measurements for Cs on Si(100)(2X1), Si(111)(7X7), and Si (111)(v3 X v3)R30°-B reconstructed surfaces using Rutherford Backscattering Spectrometry in ultrahigh vacuum. The results bracket possible structural models for these systems. For the Cs/Si(111)(v3 X v3)R30°-B interface, this work confirms conclusions regarding electron localization effects and introduces considerations of ion-beam-induced desorption for the weakly-bound Cs