Cette thèse porte sur l'étude de la production d'une source d'ionsCes travaux de thèse ont consisté à étudier la faisabilité d'une source d'ions césium brillante et de faible dispersion énergétique à partir d'atomes froids dans le but de la coupler à une optique de faisceau d'ions focalisés (FIB).Il s'agit de produire une source ionique continue, de fort courant et de plus faible dispersion en énergie que les sources actuellement utilisées. Un schéma expérimental innovant a donc été imaginé.Un flux continu d'atomes de césium est issu d'un four à recirculation. Les atomes sont ensuite collimatés et compressés en se basant su les techniques de refroidissement d'atomes par laser. Des simulations de la mélasse optique pour la collimation et du MOT-2D pour la compression sont présentées. Issus d'un jet effusif de césium produit par un four à recirculation, la collimation grâce à une mélasse optique et la compression effectuée en en utilisant un MOT-2D des atomes de césium a été étudiée. Le schéma d'ionisation des atomes de césium passe par une excitation vers un état de Rydberg puis par une ionisation par champ électrique. Les propriétés remarquables des atomes pour ces niveaux d'énergie permettent d'obtenir une ionisation des atomes en champ électrique quasi-instantanée qui permet la minimisation de la dispersion énergétique. Nous avons développer une simulation permettant d'étudier les propriétés du champ électrique nécessaire pour l'ionisation afin de choisir le niveau de Rydberg approprié. Des simulations complémentaires ont permis de définir et de concevoir les électrodes nécessaires à la production du champ électrique d'excitation et d'ionisation. Une première étude des effets coulombiens de la source d'ions lors de l'ionisation des atomes de Rydberg est présentée. Enfin, l'étude théorique du couplage de la source obtenue avec une optique de faisceaux d'ions focalisés est réalisée.Un montage expérimental vient compléter ces diverses études et a permis d'obtenir les premiers résultats. / The main goal of this thesis consists on studying the production of a bright ion cesium source with a low energy dispersion. In this work, the technology of cold atoms is used to coupled this source with optical elements of focused ion beams (FIB).A cw ionic source with high current and small energy spread is necessary to complete the performances of others available sources. A new experimenal scheme is presented here.A continuous high flux of cesium atoms is produced by a recirculating oven. The atoms are the collimated and compessed using laser cooling technology. Several simulations concerning the collimation and the compression have been made.A different way of producing ions comes from the excitation in an electric field of Rydberg atoms and then their ionization in an electric field. The remarkable properties of Rydberg atoms show the possibilty to ionize them almost instantanely reducing this way the energy spread. In the work several simulations indicate the way to choose the right Rydberg state for this application and the correct corresponding electric field.Further simulations determinate the electrdes needed for the excitation and the ionization of the Rydberg atoms from the beam. Moreover, a first study of the coulombian effects occuring in this ion source is described. Finally, a theorical study of the ion source and optic FIB coupling is shown.The description of the experimental setup and the first results complete this work.

Elektronentomographie erlaubt die dreidimensionale (3D) Charakterisierung von Kristalldefekten auf der Nanometerskala. Die Anwendung in der Forschung an epitaktischen Halbleiterheterostrukturen ist bisher nicht durchgesetzt worden, obwohl kleiner werdende Bauteile mit zunehmend dreidimensionaler Struktur entsprechende Untersuchungen verlangen, um die Beziehung von Struktur und physikalischen Eigenschaften in entsprechenden Materialsystemen zu verstehen. Die vorliegende Arbeit demonstriert die konsequente Anwendung der Elektronentomographie auf eine III-Sb basierte Laser- und eine 3D (In,Ga)N/GaN Nanosäulenheterostruktur. Die unerlässliche Zielpräparation von Proben mittels FIB-SEM-Zweistrahlmikroskops wird herausgestellt. Die kontrollierte Orientierung der Probe während der Präparation und die sorfältige Auswahl eines Abbildungsverfahrens im STEM werden detailliert beschrieben. Die umfassende räumliche Mikrostrukturanalyse einer antimonidbasierten Schichtstruktur folgt der Dimensionalität von Kristalldefekten. Die Facettierung und Lage einer Pore (3D Defekt), deren Auftreten in der MBE gewachsenen GaSb-Schicht untypisch ist, werden bestimmt. Das Zusammenspiel von anfänglich abgeschiedenen AlSb-Inseln auf dem Si-Substrat, der Ausbildung eines Fehlversetzungsnetzwerkes an der Grenzfläche der Heterostruktur (2D Defekt) und dem Auftreten von Durchstoßversetzungen wird mit Hilfe der Kombination tomographischer und komplementärer TEM-/STEM-Ergebnisse untersucht. Die räumliche Anordnung von Versetzungen (1D Defekte), die das ganze Schichtsystem durchziehen, wird mit Elektronentomographie offenbart. Die Wechselwirkung dieser Versetzungen mit Antiphasengrenzen und anderen Liniendefekten sind ein einzigartiges Ergebnis der Elektronentomographie. Abschließend sind Unterschiede im Indiumgehalt und in der Schichtdicke von (In,Ga)N-Einschlüssen auf verschiedenen Facetten schief aufgewachsener GaN-Nanosäulen einmalig per Elektronentomographie herausgearbeitet worden. / Electron tomography exhibits a very poor spread in the research field of epitaxial semiconductor heterostructures in spite of the ongoing miniaturization and increasing three-dimensional (3D) character of nano-structured devices. This necessitates a tomographic approach at the nanometre scale in order to characterize and understand the relation between structure and physical properties of respective material systems. The present work demonstrates the rigorous application of electron tomography to an III-Sb based laser and to an (In,Ga)N/GaN nanocolumn heterostructure. A specific target preparation using a versatile FIB-SEM dual-beam microscope is emphasized as indispensable. The purposeful orientation of the specimen during preparation and the careful selection of an imaging mode in the scanning-/transmission electron microscope (S/TEM) are regarded in great detail. The comprehensive spatial microstructure characterization of the antimonide based heterostructure follows the dimensionality of crystal defects. The facetting and position of a pore (3D defect) which is unexpected in the MBE grown GaSb layer, is determined. The interplay of the initially grown AlSb islands on Si, the formation of a misfit dislocation network at the heterostructure interface (2D defect) and the presence of threading dislocations is investigated by the correlation of tomographic and complementary S/TEM results. The spatial arrangement of dislocations (1D defects) penetrating the whole stack of antimonide layers is revealed by electron tomography. The interaction of these line defects with anti-phase boundaries and with other dislocations is exclusively observed in the 3D result. The insertion of (In,Ga)N into oblique GaN nanocolumns is uniquely accessed by electron tomography. The amount of incorporated indium and the (In,Ga)N layer thickness is shown to vary on the different facets of the GaN core.

The utilization of ferromagnetic shape memory alloys (FSMAs) in small scale devices has attracted considerable attention within the last decade. However, the lack of sufficient studies on their reversible shape change mechanisms, i.e, superelasticity, magnetic field-induced martensite variant reorientation and martensitic phase transformation, at the micron and submicron length scales prevent the further development and the use of FSMAs in small scale devices. Therefore, investigating the size effects in these mechanisms has both scientific and technological relevance. Superelastic behavior of Ni54Fe19Ga27 shape memory alloy single crystalline pillars was studied under compression as a function of pillar diameter. Multiple pillars with diameters ranging between 200 nm and 10 µm were cut on a single crystalline bulk sample oriented along the [110] direction in the compression axis and with fully reversible two-stage martensitic transformation. The results revealed size dependent two-stage martensitic transformation which was suppressed for pillar sizes of 1 µm and below. We also demonstrated that the reduction in pillar diameter decreases the transformation temperature due to the difficulty of martensite nucleation in small scales. Size effects in the magnetic field-induced martensite variant reorientation were investigated in the Ni50Mn28.3Ga21.7 single crystals oriented along the [100] direction of the austenite phase. Single crystalline compression pillars were fabricated on the martensite twins between the sizes of 630 nm and 20 µm. It was found that the stress-induced and magnetic field-induced martensite variant reorientation are size dependent and became more difficult with the reduction in sample size. Surprisingly, it was still possible to magnetically activate the shape change in the micropillars which indicates the fact that magnetocrystalline anisotropy energy increases with the reduction in sample dimensions. Ni45Mn36.6Co5In13.4 pillars between the 600 nm and 10 µm diameters were investigated along the [100] direction of the austenite to study the size effects in the magnetic field-induced phase transformation (MFIPT). MFIPT was obtained down to 5 µm size in these pillars with reasonable magnetic field levels similar to their bulk counterparts.

Eine ortsauflösende Spannungs- und Dehnungssensortechnik soll durch die Nutzung magnetostriktiver Materialien auf der Oberfläche von Kohlenstoffeinzelfasern (C-Fasern) und Mikrofeinstrukturierung dieser Schichten erzeugt und zur elektronischen Überwachung des Belastungszustandes von sicherheits- oder servicerelevanten Faserverbundbauteilen eingesetzt werden. Eine auf lokaler Gasphasenabscheidung und Mikrostrukturierung mittels der Focused Ion Beam (FIB)-Technik beruhende Sensorfabrikationsmethode wurde gemeinsam mit dem Institut für Mikrotechnologie Hannover (imt) entwickelt. Mehrschichtig mittels CVD und PVD bedampfte und zusätzlich galvanisch beschichtete C-Fasern weisen neuartige Eigenschaften auf, die im vorgestellten Vorhaben am Lehrstuhl für Verbundwerkstoffe (LVW) charakterisiert wurden. Insbesondere die Untersuchung der verschiedenen Schichten sowie deren Interfaces nehmen eine bedeutende Rolle ein.

I have investigated gap plasmon mode of an eccentric coaxial waveguide structure using effective index method. The results found good agreement with fully-vectorial numerical calculation. In the eccentric structure, a strong field localization has been noticed at and around the smallest gap. Analysis showed the increase of effective index of lowest-order waveguide mode to 3.7 in the structure considered with a 2 nm minimum gap for a wavelength of 4 micrometer. In the visible regime, the effective index increases to over 10 for the same structure. Nanohole arrays, both flowover and flow-through formats, have been fabricated using focused ion beam (FIB). A 2-color LED-based nanohole sensor has been presented. The objective of the sensing platform was to register mutually opposite intensity change of transmitted light when the dielectric medium of metal-dielectric interface of the nanohole sensor undergoes a change. A number of tests with microfluidics setup demonstrated the proof-of-concept.

Orientadores: Jacobus Willibrordus Swart, Stanislav Moshkalev / Tese (doutorado) - Universidade Estadual de Campinas, Faculdade de Engenharia Elétrica e de Computação / Made available in DSpace on 2018-08-23T22:11:44Z (GMT). No. of bitstreams: 1 Turatti_LuizGustavo_D.pdf: 35255933 bytes, checksum: dbbe11c7c0f55012ba27274415c2494d (MD5) Previous issue date: 2013 / Resumo: Este é um trabalho multidisciplinar que aborda questões de química, física, engenharia elétrica (nanoengenharia) e principalmente avanços obtidos com simulações por computador. Os programas comumente utilizados para simulações de fótons/íons focalizados em outro material consomem recursos computacionais por diversas horas ou até dias, para concluir os cálculos de determinado experimento, como a simulação de um processo efetuado com o equipamento FIB/SEM (Focused Ion Beam/Scanning Electron Miscroscopy), por exemplo. Através do uso de ambientes computacionais virtualizados, associados a programação paralela em CPU (Central Processing Unit) e GPGPU (General Purpose Graphics Processing Unit) é possível reduzir significativamente o tempo da simulação de horas para minutos, em situações de interação de partículas, que envolvem aproximação de colisões binárias (BCA, Binary Collision Approximation) e o Método de Monte Carlo (MMC), principalmente. O uso de placas gráficas (comumente utilizadas para jogos) potencializou o poder de processamento numérico para uso acadêmico a baixo custo, reduzindo o tempo para obtenção de resultados que foram comprovados experimentalmente. A utilização de programas análogos que empregam BCA e MMC, tais como TRIM/SRIM (Transport of Ions in Matter, atualizado para Stopping and Range of Ions in Matter), MCML (Monte Carlo for Multi Layered media) e CUDAMCML (Compute Unified Device Architecture, MCML) auxiliam a comparação de ganho de desempenho entre CPU e GPGPU evidenciando o melhor desempenho desta última arquitetura, com CUDA. Em simulações equivalentes com matrizes esparsas executadas em CPU e GPGPU, a redução do tempo de processamento variou entre três e quinze mil vezes, respectivamente. Com o Método de Monte Carlo, a redução foi de até cento e quarenta e uma vezes para melhores resultados. As simulações de alto desempenho e baixo custo computacional permitem antever algumas situações experimentais, diminuindo a necessidade de explorar todas as possibilidades práticas e, dessa forma, reduzindo o custo com laboratório / Abstract: This is a multidisciplinary work that addresses issues of chemistry, physics, electrical engineering (Nanoengineering) and especially advances obtained with computer simulations. Programs commonly used for simulations of photons/ions focused onto other materials consume computational resources for several hours or even days, to complete the simulations of a process performed with the equipment FIB/SEM (Focused Ion Beam/Scanning Electron Miscroscopy), for example. Through virtualized computing environments associated with parallel programming on CPU (Central Processing Unit) and GPGPU (General Purpose Graphics Processing Unit) is possible to significantly reduce the simulation total time from hours to minutes in the interactions of particles, involving binary collision approximation (BCA) and Monte Carlo method (MMC), mostly. The use of graphics cards (generaly used for games) enhanced the numerical processing power to be used in academia with low cost and reduced the time to obtain results experimentally verified. The use of similar software using BCA and MMC, such as TRIM/SRIM (Transport of Ions in Matter, upgraded to Stopping and Range of Ions in Matter), MCML (Monte Carlo for Multi Layered media) and CUDAMCML (Compute Unified Device Architecture, MCML) helped us to make a comparison of performance between CPU and GPGPU showing the best performance of the latter architecture, with CUDA. In equivalent simulations using sparse matrices in CPU and GPGPU, the time reduction of processing varied between three and fifteen thousand times, respectively. With the Monte Carlo method, reduction was up to one hundred forty one times for best results. Simulations of high performance and low computational cost allow us to predict some experimental situations, reducing the need to explore all practical possibilities and thus, reducing the lab costs / Doutorado / Eletrônica, Microeletrônica e Optoeletrônica / Doutor em Engenharia Elétrica

Quantum dots (QDs) are a semiconductor nanostructure in which a small island of one type of semiconductor material is contained within a larger bulk of a different one. These structure are interesting for a wide range of applications, including highly efficient LASERs, high-density novel memory devices, quantum computing and more. In order to understand the nature of QDs, electrical characterisation techniques such as capacitance-voltage (CV) profiling and deep-level transient spectroscopy (DLTS) are used to probe the nature of the carrier capture and emission processes. This is limited, however, by the nature of QD formation which results in a spread of sizes which directly affects the energy structure of the QDs. In this work, I sought to overcome this by using Si substrates patterned with a focused ion beam (FIB) to grow an array of identically-sized Ge dots. Although I was ultimately unsuccessful, I feel this approach has great merit for future applications.In addition, this thesis describes several unusual characteristics observed in InAs QDs in a GaAs bulk (grown by molecular beam epitaxy-MBE). Using conventional and Laplace DLTS, I have been able to isolate a single emission transient. I further show an inverted relation between the emission rate and the temperature under high field (emissions increase at lower temperatures). I attribute this to a rapid capture to and emission from excited states in the QD. In addition, I examine a metastable charging effect that results from the application of a sustained reverse bias and decreases the apparent emission rate from the dots. I believe this to be the result of a GaAs defect with a metastable state which acts as a screen, inhibiting emission from the dots due to an accumulation of charge in the metastable state. These unusual characteristics of QDs require further intensive work to fully understand. In this work I have sought to describe the phenomena fully and to provide hypotheses as to their origin.

Du fait de leur facilité de fabrication et de leurs propriétés physiques uniques, les nanofils (NFs) de semi-conducteurs présentent des potentialités d’application importantes elles pouvaient être comme briques élémentaires de nombreux dispositifs nano- et opto-électroniques. Différents procédés de fabrication ont été développés pour fabriquer et organiser ces nanofils en épitaxie sur silicium. Cependant, un des principaux problèmes réside dans le manque de reproductibilité des NFs produits naturellement. Pour obtenir un meilleur contrôle de leur périodicité, localisation, forme et taille, différents types de gravure ont été mis au point. Aujourd’hui, des incertitudes importantes persistent quant à leurs propriétés fondamentales, en raison d’un manque de corrélation entre les propriétés électroniques et optiques et les détails microscopiques (composition, structure, chimie ...etc.). L’objectif de ce travail est de développer deux types de procédés de fabrication : le premier "top-down" est basé sur la nanogravure directe par faisceau d’ions focalisés (FIB)de couches bi-dimonsionnelles de SiGe. Ce procédé permet de contrôler la taille des NFs, les déformations, et leur localisation précise. Il permet de fabriquer des réseaux de larges piliers. Les NFs réalisés par cette technique sont peu denses et de diamètre important. Le second procédé est de type "Bottom-Up" ; il s’appuie sur la croissance VLS à partir de catalyseurs métalliques (AuSi). Les NFs réalisés ont étudiés à l’échelle locale afin de mesurer la taille moyenne de contrainte ainsi que leur effet sur le confinement quantique et sur la structure de bande des NFs. / SiGe/Si core/shell nanowires (NWs) and nanodots (NDs) are promising candidates for the future generation of optoelectronic devices. It was demonstrated that the SiGe/Si heterostructure composition, interface geometry, size and aspect ratios can be used to tune the electronic properties of the nanowires. Compared to pure Si or Ge nanowires, the core-shell structures and exhibit extended number of potential configurations to modulate the band gap by the intrinsic strain. Moreover, the epitaxial strain and the band-offsets produce a better conductance and higher mobility of charge carriers. Recent calculations reported that by varying the core-shell aspect ratio could induce an indirect to direct band gap transition. One of the best configurations giving direct allowed transitions consists of a thin Si core embedded within wide Ge shell. The Germanium condensation technique is able to provide high Ge content (> 50%) shell with Si core whom thickness of core and shell can be accurately tuned. The aim of this work is to develop two types of synthesis processes: the first "top-down" will be based on direct nanoetching by focused ion beam (FIB) of 2D SiGe layer. This process allows the control of the size of NWs, and their precise location. The NWs achieved by this technique are not very dense and have a large diameter. The second processes called "bottom-up"; are based on the VLS growth of NWs from metal catalysts (AuSi). Grown NWs have been studied locally in order to measure the mean size and the strain and their effects on the quantum confinement and band structure of NWs.

The diploma thesis deals with the experimental study of surface plasmon polaritons (SPPs) on nano-structures with the Au/Co/Au multilayer. Plasmonic structures were prepared by the electron beam lithography and by the focused ion beam. A Scanning optical near-field microscope was used for detection of surface plasmon polaritons. SPPs were confirmed by the experiment with different polarizations of the illuminating light. Furthermore, differences in plasmon interference wavelengths was measured for different surface dielectric functions. Finally, the decantation of the SPPs interference image was measured in dependence on the external magnetic field.

Metastable paramagnetic face-centered cubic (fcc) Fe thin films deposited on a Cu(100) single-crystal are good candidates for focused ion-beam magnetic patterning, due to their structural and magnetic phase transformation to ferromagnetic body-centered cubic (bcc) Fe upon ion-beam irradiation. However, pure fcc Fe films undergo spontaneous transformation when their thickness exceeds 10 ML. This limit can be extended to approximately 22 ML by deposition of Fe at increased CO background pressures. We show that much thicker films can be grown by alloying with Ni, that stabilizes the fcc phase. The amount of Ni necessary to stabilize non-magnetic, metastable fcc Fe films in dependence on the residual background pressure during the deposition is determined and a phase diagram revealing the metastable region is presented. It is also shown that the stabilizing effect of CO can be removed by artificial O saturation of the surface and thus the Ni-stabilized films can be grown also in systems with lower vacuum. Finally, we present fabrication of micro- and nanostructures in 44 ML thick films of Fe alloyed with Ni on Cu(100) by focused ion beam.