Magnetic thin films and patterned nanostructures have been studied with respect to their magnetic properties using SQUID-magnetometry, magnetic force microscopy, electrical measurements, and micromagnetic calculations. Properties of vortex domain walls, trapped in Permalloy nanowires with artificial constrictions, were investigated experimentally and by numerical calculations. In particular, the geometrical extent and strength of the pinning potential were evaluated. In these wires, long-range vortex domain wall displacement induced by spin polarized alternating currents was obtained numerically at reduced threshold current densities as compared with the direct current case. Due to the asymmetry of the energy potential, the long-range displacement direction is determined by the vortex chirality. Strained FeCo/Pt superlattices with strong perpendicular anisotropy were investigated experimentally. The strain was controlled by varying the thickness of each alternating layer with monolayer precision and was found to have a dominating effect on the total anisotropy. Epitaxial films of the diluted magnetic semiconductor (Ga,Mn)As were studied with focus on how the ferromagnetic transition temperature could be controlled by post-growth annealing. The ferromagnetic transition temperature was enhanced by approximately 85% for a Mn-doping concentration of 6% under certain conditions. A method to manipulate micrometer sized magnetic particles on patterned arrays of elliptical Permalloy microstructures was studied. Controlled motion and separation of the magnetic particles were obtained using applied rotating magnetic fields. The domain structure of the elliptical elements was studied numerically.

Un des challenges actuels dans le domaine de la spintronique est son extension vers des systèmes dits de nanospintronique, où les dimensions sont réduites à l’échelle du nanomètre, avec comme système modèle un nano-aimant unique. La découverte de nouveaux moyens pour contrôler l’aimantation dans ces nano-aimants, pourrait avoir des applications pour les technologies de l’information. Dans le cadre de cette thèse nous nous sommes intéressés plus particulièrement aux nouveaux effets liés à l’accumulation de charges électriques au sein de films magnétiques ultraminces, aussi appelés effets de champ électrique. Nous avons étudié l’effet de l’application d’un champ électrique sur les différents paramètres magnétiques propres à nos films, via des mesures de magnéto-transport et magnéto-optique. Ces mesures ont été conduites sur une tri-couche de Pt/Co/AlOx présentant un gradient d’oxydation pour l’alumine. L’oxydation de cette interface étant contrôlée à l’échelle nanométrique, une large gamme de paramètres magnétiques est donc accessible au sein d’un seul et même échantillon. Ceci représente un très bon outil d’étude pour les différents phénomènes intervenant dans ces tri-couches. La caractérisation fine de ces échantillons a permis de mettre en évidence une zone pour laquelle des propriétés très intéressantes ont été observées (domaines spontanément désaimantés, bulles skyrmioniques). La proximité de la température de Curie (Tc) de cette zone avec la température de mesure (ambiante) en est la cause principale. Ces bulles skyrmioniques font actuellement l’objet de beaucoup de recherche au niveau national et international, étant considérées comme potentiellement très attractives pour des applications de type mémoire et logique magnétique. L’originalité de ce travail de thèse a été de montrer que ces bulles skyrmioniques sont fortement influencées par le champ électrique, dû au fort contrôle des propriétés magnétiques de cette zone (anisotropie, champ coercitif, aimantation à saturation, facteur DMI). Nous proposons le design d’un interrupteur nanométrique permettant de créer ou effacer ces bulles skyrmioniques grâce à un champ électrique, levant ainsi un verrou important pour la mémoire/logique magnétique basée sur ces bulles skyrmioniques. La potentialité de ces nouveaux effets pour réaliser un renversement ’aimantation/une création de bulles skyrmioniques, assistés par champ électrique, a été étudiée à des plages de températures et d’anisotropies adaptées pour ces applications (température ambiante). / A current challenge in the field of spintronics is the development of functional nanospintronics systems, in which the dimensions of the device are confined to the nanometer scale. The model system is called a single nano-magnet. New possible routes to control its magnetisation could be useful for many applications, in particular, those in the area of information technology. During this PhD, we chose to study the particular effects that are linked to the electric charge accumulation in the nano-magnet. This effect, also known as the electric field effect, were studied on the different magnetic properties of our films. They were probed by magneto-transport and magnetooptical measurements. These measurements were conducted on asymmetric Pt/Co/AlOx trilayers. These structures were sputter-deposited on a wedge shape for the alumina. This leadingto a nanometric control of the oxidation degree of the interface. Then, a wide range of magnetic parameters is available on a unique sample. Systematic caracterization of these structures showed an interesting zone for magnetic properties (spontaneous striped domains, skyrmionic bubbles). The observation of this type of magnetic object is directly linked to the weak Curie temperature(Tc) of this zone (close to room temperature. Skyrmionic bubbles are subject to lots of international studies. They are potentially attractive for memories or logic devices development. The key result of this PhD was to show the strong dependence of magnetic skymionic bubbles with electric field application. The full electrical switch of these objects has been achieved, due to the strong electrical control of the different magnetic properties. To induce electric-field assisted magnetisation reversal/skyrmionic bubbles nucleation, studies were performed for an adapted range of temperatures and anisotropies (room temperature).

Magnetic nanorings are the object of increasing scientific interest because they possess the vortex (stray field free) state which ensures lower magnetostatic interactions between adjacent ring elements in high packing density memory devices. In addition, they have other potential applications such as single magnetic nanoparticle sensors, microwave-frequency oscillators and data processing. The stabilization of magnetization state, types of domains and domain wall structures depends on the competing energies such as magnetostatic, exchange and anisotropy. The nucleation/ pinning of domain walls depends on the local inhomogeneity in shape such as roughness, notches etc, which play an important role in stabilizing domain configurations that can be controlled by magnetic field/spin polarized current etc. The information gained by the study of magnetization reversal in the nanoring devices could help in understanding the possible stable magnetization states, which can be incorporated into the development of magnetic logic and recording devices in a NR-based architecture. The magnetization reversal and the stable states in the symmetric cobalt nanorings (NRs) attached with nanowires (NWs) (at diametrically opposite points), is studied through magnetoresistance (MR) measurements by application of in-plane magnetic field (H). Here, a strong in-plane shape anisotropy is introduced in cobalt thin films by patterning them into NR and NWs. The presence or absence of a DW in the device is detected utilizing the AMR property of the material, where the presence of DW leads to a decrease in the resistance of the probed section of the device. It is demonstrated that the magnetization reversal of the device with smaller width, proceeds through four distinct magnetization states, one of these is the stabilized vortex state that persists over a field range of 0.730 kOe. The effect of width (from 70 nm to 1 µm) and diameter (from 2 µm to 6 µm) on the switching behavior is demonstrated. The magnetization states observed in the MR measurements are well supported by micromagnetic simulations. A statistical analysis of switching fields in these devices was demonstrated by histogram plot (of switching counts) to understand the repeatability and reproducibility of switching characteristics. In addition, the magnetization reversal of permalloy NR is also studied by MR experiment when two NWs are attached to it in two different configurations. It has been demonstrated that a vortex state can be stabilized if the NWs are attached in a way that they are at an obtuse angle with respect to each other (type-II device) which is not the case if the NWs are attached at diametrically opposite points (type-I device). This occurs because the NWs reverse at different fields as they are asymmetric with respect to applied magnetic field at every angle. The angular dependence study of the magnetization states indicates that the vortex state could be always stabilized in the type-II device irrespective of the direction of in-plane applied magnetic field while it is not the case in type-I device. The experimental observations are in good agreement with micromagnetic simulations performed on similar device structures. Further, in the last part of the thesis, the magnetization reversal of geometrically engineered cobalt NR (of width 80 nm) devices are studied by application of H. Two types of cobalt nanoring devices were fabricated. In type-1 devices the NR is attached with two nanowires (NWs) at diametrically opposite positions. In type-2 devices the NR is attached with one NW, whose other end is attached to a 5 µm x 5 µm square pad. In type-2 device, the pad reverses first, thus causing the generation of a DW at the junction of the nucleation pad and the NW. The device type-2 possesses five distinct magnetization states, one of these is the vortex state. Easy nucleation of domain walls (DWs) results in a decrease of switching field corresponding to the reversal of the nanowire. This leads to an increase in the range of fields, where the vortex state exists. In addition, angular dependence of the switching behavior indicates that the vortex state can be stabilized at all in-plane orientations of H. This occurs because of the fact that symmetry was broken due to the presence of single domain wall pinning center which was the junction of the NR and NW. The results of our micromagnetic simulations are in a good agreement with the experimental results. These results are important to understand the role of NWs which allows the formation of vortex state at every angle of the in-plane H. In type-1 device, the simulation shows that when the field is applied at any angle away from the axis of the NW, the vortex state cannot be stabilized. The width dependent study of switching fields indicates, that the switching fields decrease with increasing the width of NR devices due to a reduction of the demagnetization field.

Le but de ce travail de thèse est de réaliser des vannes de spin « naturelles » constituées d’un matériau unique. Le matériau en question doit contenir une alternance de feuillets magnétiques et non magnétiques et présenter différents états magnétiques. Ce système modèle ne présenterait alors ni d’inter diffusion ni de rugosité aux interfaces magnétiques/non-magnétiques et pourrait constituer un système modèle pour les études des phénomènes de transport dépendant de spin. Le CoV2O6 est un oxyde polymorphe de basse dimensionnalité. Les deux phases (α et γ) présentent chacune plusieurs plateaux d’aimantation induits par un champ magnétique. Le premier objectif est de comprendre la structure cristalline et magnétique de ce composé, ce qui a été réalisé par des mesures d’aimantation, de diffraction des rayons X et de neutrons sur des poudres et monocristaux. Les résultats de la phase α sont appuyés par des calculs ab initio. Le second objectif est de déposer ce matériau en couche mince afin d’analyser ses propriétés de transport. Des films épitaxiés de γ CoV2O6 ont été obtenus sur TiO2(100) et TiO2/Pt(111) par ablation laser. Le dépôt sur l’électrode de Pt montre la présence de six variants entrainant l’observation de plateaux d’aimantation supplémentaires. / The purpose of this work is to synthesize “natural” spin valves within one unique material. The material needs a crystalline structure formed by stacking magnetic and non-magnetic sheets as well as different magnetic states. Such model system could be used for the study of spin dependent transport properties as no-roughness or diffusion at the magnetic/non-magnetic interfaces is allowed. The polymorph low-dimensional oxide CoV2O6 is such a material. Both phases (α and γ) exhibit field induced magnetization plateaus. This study’s first aim is to understand crystalline and magnetic structures. Investigations were performed on powders and single crystals using magnetization measurements as well as X-ray and neutron diffraction measurements. The magnetic properties of α CoV2O6 were supported by ab initio calculations. The second aim is to grow CoV2O6 thin films in order to analyze further the transport properties. Epitaxial γ CoV2O6 thin films were obtained by pulsed laser ablation on both TiO2(100) and TiO2/Pt(111) substrates. Films grown on Pt electrode exhibit six variants which allows observing additional magnetization plateaus.

Made available in DSpace on 2014-07-29T15:07:08Z (GMT). No. of bitstreams: 1 Dissertacao Luciano Vaz de Sa.pdf: 1061982 bytes, checksum: 6f6a32de4e2caf51ea9a29ac0038f796 (MD5) Previous issue date: 2011-09-09 / The Ferromagnetic Resonance technique is used to study the magnetostriction and the magnetic anisotropy of cobalt thin films grown on glass and silicon substrates. The effective values of the magnetostriction and magnetic anisotropy constants obtained do not agree with known values in the literature, but show the viability of the experimental method used [with the film glued to a cantilever beam under stress] to study the magnetostriction of magnetic thin films. / Este trabalho tem como objetivo estudar a magnetostricção e a anisotropia magnética de filmes finos de cobalto usando a técnica de Ressonância Ferromagnética. As amostras investigadas foram produzidas pela técnica de magnetron sputtering, depositadas sobre substratos de vidro e silício, com espessuras variando na faixa de 10 a 20 nm. Os valores efetivos obtidos para as constantes de magnetostricção e de anisotropia magnética de volume e de superfície diferem de valores conhecidos na literatura, mas comprovam a viabilidade do procedimento experimental aplicado [com o filme fixo sobre uma haste cantilever sujeita a stress] para investigar a magnetostricção de filmes finos magnéticos.

Nous avons étudié, par RPE impulsionnelle, la cohérence quantique et des spins électroniques des ions de transition Mn2+, Co2+, Fe3+, et des complexes Fe3+/Cs+ et Fe3+/Na+, tous présents dans le ZnO monocristallin. Nous avons trouvé que l’anisotropie magnétique peut altérer la cohérence de la phase dynamique des qubits des spins électroniques. Nous avons mesuré une faible décohérence pour les spins d’ions Mn2+et Fe3+ dans ZnO, qui ont tous deux une faible anisotropie magnétique uniaxiale, tandis que les ions Co2+ isolés avec une très forte anisotropie magnétique uniaxiale, une décohérence rapide a été mis en évidence. Nous avons trouvé que les spins électroniques des complexes de type Fe3+/Cs+, ayant un tenseur d’anisotropie magnétique plus complexe que la simple anisotropie uniaxiale des ions Fe3+ isolés, possèdent presque le même temps de décohérence. Par la méthode des perturbations, nous avons mis en évidence théoriquement un terme supplémentaire à la phase habituelle de Berry, dû à l’anisotropie magnétique et qui existe dans tout système ayant un spin S>1/2. / We studied by pulsed EPR (p-EPR), the quantum coherence of electronic spins qubits of isolated transition metal ions of Mn2+, Co2+, Fe3+ and Fe3+/Cs+ as well as Fe3+/Na+ complexes, all found as traces in mono-crystalline ZnO. Indeed, we experimentally demonstrated that the magnetic anisotropy can alter the coherence of the dynamic phase of electronic spins qubits. We found a small decoherence for Mn2+ and Fe3+, spins having a small uniaxial magnetic anisotropy, and on the contrary, we found a very strong decoherence for Co2+ spins having a very strong uniaxial magnetic anisotropy. We found that the electronic spins of the Fe3+/Cs+ complex, having a more complex tensor magnetic anisotropy compared to the simplest uniaxial one of isolated Fe3+ spins in ZnO, have almost the same coherence time. By the perturbation method, we have found theoretically an additional term to the usual geometric Berry phase, due to the magnetic anisotropy which exists in any system having a spin S>1/2.

Physical systems having dimensions smaller than, or of the same order of magnitude as, the characteristic length scale relevant to a physical property are referred to as mesoscopic physical systems. Due to the dimensions of the system, several physical properties get affected and this could reveal interesting physics which would other-wise have not been apparent. In the recent times, a lot interesting applications have resulted from such studies. The fundamental length scale in ferromagnetic systems is the exchange length. It is related to the magnetic anisotropy and exchange constants. Other length scales such as the size of a magnetic domain or a domain wall depends on the minimisation of energy associated with this length scale along with other factors such as zeeman energy, magnetostatic, magnetoelastic and anisotropy energies. Ultrathin magnetic films have thickness smaller than the exchange length. In this thickness regime, the surface of the film plays an important role. The magnetic anisotropy energy would get a significant contribution from the surface of the film and if it dominates over the volume contribution, would eventually lead to magnetisation pointing out of the plane of the film as opposed to imposition of demagnetising fields. Examples for such cases are FePt(L10 phase) films and Co(0001) films. Such films are important in memory applications where perpendicularly magnetised recording media are desired. When the lateral dimensions of thin films are reduced, demagnetising fields become even more important. Depending on the anisotropy in the system, certain domain patterns get stabilised in the final structure. This has led to important applications in the field of magnonics. The use of angular momentum transfer from spin polarised electrons to change the configuration of magnetisation of structured magnetic films has led to interesting memory and oscillator applications. The underlying physical parameter that needs to be controlled and carefully studied in all these cases is the magnetic anisotropy. It is favourable to have uniaxial magnetic anisotropy for memory and oscillators. This thesis chiefly deals with Fe/GaAs(001) systems. The choice of the physical system follows interest in spintronics where spin injection is desired into a semiconductor from a ferromagnet. The thesis is organized into chapters as follows. Chapter 1 attempts to introduce the reader to some of the basic concepts of mag-netism and some magnetic phenomena. The characteristic nature of a ferro-magnetic material is its spontaneous magnetisation due to long range ordering below the Curie temperature. But the moment is coupled, through some in-teractions, to spatial co-ordinates which leads to spatial variation of magnetic properties. Such interactions are also responsible for the formation of magnetic domains. The spatial variation of magnetic properties within a ferromagnet is called magnetic anisotropy. A major part of the thesis deals with the study of magnetic anisotropy of Fe thin films grown on GaAs(001) substrates. For a better understanding, the structure of the semiconductor is introduced first before discussing the influence of the structure of GaAs on the growth of Fe. A short description of the uniaxial magnetic anisotropy in Fe films is given before starting on an exploration of some possible reasons for it. Concepts of ferromagnetic resonance, spin torque effect and micromagnetic simulations are given. Chapter 2 gives a brief description of some of the experimental apparatus that was setup during the course of the research along with an overview of the differ-ent sample preparation and characterisation techniques used. The chapter is organised according to the general functionality of the techniques. Some con-cepts such as the use of low energy electrons, nanostructuring etc are introduced along with the corresponding techniques since it is best understood along with the instrumentation. Chapter 3 reports some surprising findings about the in-plane magnetic anisotropy in Fe films grown on an MgO underlayer. Until now, it has been understood that such films should exhibit only a four-fold magnetic anisotropy within the plane of the film. But the Fe/MgO/GaAs(001) films studied here exhibited an in-plane uniaxial magnetic anisotropy(IPUMA). IPUMA is dominant upto about 25 ML of Fe in case of Fe/MgO/GaAs(001) films whereas, in Fe/GaAs(001) films it is dominant only upto about 15 ML. Thus, the presence of the MgO film even appeared to enhance the uniaxial anisotropy as compared to the Fe/GaAs(001) films. In the ferromagnetic resonance (FMR) spectra, as many as three peaks were observed in Fe/GaAs(001) films of thickness 50 ML close to the hard axis of magnetisation. This means that three could be three energy minima possibly due to a competition between the anisotropies involved. Chapter 4 elaborates the investigations of the effect of orientation and doping con-centration of the GaAs substrate on the magnetic anisotropy of Fe/GaAs(001) films. It is found that doping the substrate (n type) reduces the strength of the IPUMA in Fe/GaAs films. In the wake of the long-standing debate of electronic structure v/s stress as the origin of the IPUMA in Ferromagnet/Semiconductor films, this result is important because it implies that the electronic structure of the Fe/GaAs interface influences the magnetic anisotropy. But stress, as a cause of IPUMA cannot be ruled out. The influence of deposition techniques on magnetic anisotropy is also investigated. Chapter 5 presents a way of manipulating magnetic anisotropy, and hence mag-netisation dynamics, by nanostructuring of epitaxial Fe films. It is based on the property that magnetic anisotropy of Fe films is thickness dependent. It is demonstrated that using techniques of nanostructuring, a 2 dimensional mag-netic system with controllable variation of local magnetic anisotropy is created. Such a system could be a potential magnonic crystal. chapter 6 demonstrates the proof of concept of a new memory device where memory is stored in the magnetic domain configuration of a ring in relation to that of a nano-wire. Switching between the memory states is acheived through spin trasfer torque of an electric current passing through the device, whereas read-out of the memory state is through the measurement of resistance of the device. Devices are made using NiFe and Co; it is seen that the behaviour of the devices can be explained taking into account the anisotropic magnetoresistance of the material used. Finally, the various results are summarised and a broad outlook is given. Some possible future research related to the topics dealt within this thesis is discussed.

Magnetické nanostruktury mají zajímavé vlastnosti, které umožňují jejich aplikace v základním výzkumu i průmyslu. Jednou z těchto vědeckých disciplín je i magnonika - výzkumný obor, který se zabývá fyzikou spinových vln, které lze použít v nediskrétních výpočtech s nízkými ztrátami energie. Výroba magnetických struktur fokusovaným iontovým svazkem (FIB) je alternativní metoda k běžně používaným litografickým metodám. Materiál použitý v této práci - metastabilní železo - je schopen při ozáření iontovým svazkem podstoupit fázovou transformaci z paramagnetické plošně centrované kubické krystalové struktury na feromagnetickou fázi s prostorově centrovanou kubickou krystalovou strukturou. Jednou z vlastností, která ovlivňuje šíření spinových vlny, je magnetická anizotropie. Tato práce představuje vliv depozičních podmínek v ultra vysokém vakuu během přípravy metastabilní železné vrstvy na magnetickou anizotropii struktur vytvořených pomocí FIB do tohoto filmu. Dále prezentujeme souvislosti mezi parametry FIB, krystalografickými vlastnostmi výsledných struktur a jejich magnetickou anizotropií.

Magnetický tunelový spoj (MTJ) je spintronická součástka komerčně používaná ve vysoce citlivých čtecích hlavách pevných disků. Počínaje rokem 2007 přispěla k udržení exponenciálního nárůstu hustoty magnetického zápisu. Kromě toho se také stala stavebním kamenem rychlé, odolné, úsporné a nevolatilní magnetické paměti s přímým přístupem (MRAM). Tento nový typ polovodičové paměti, stejně jako je tomu u čtecích hlav disků, využívá tunelové spoje založené na krystalickém oxidu hořečnatém (MgO) spolu s 3d kovovými magnetickými prvky (Fe a Co). Pro zmenšení MTJ a současné udržení dlouhodobé stability paměti proti tepelným fluktuacím je zapotřebí silná magnetická anizotropie ve směru kolmém na rozhraní kov|MgO. V této práci proto nejdříve provedeme analýzu magnetokrystalické anizotropie (MCA) kubického prostorově centrovaného Fe, Co a Ni na MgO pomocí ab initio simulací. Dále bude vyvinut program pro výpočet tvarové anizotropie, která je kromě MCA velmi podstatná, neboť v součtu dávají efektivní anizotropii. Na závěr implementujeme program pro výpočet MCA na základě poruchové teorie druhého řádu. To nám umožní dát pozorované anizotropní vlastnosti do souvislosti přímo s elektronickou strukturou systému (pásovou strukturou a hustotou stavů).

Nous présentons une étude des effets de contrainte induits par l’épitaxie dans des couches minces La1-xSrxMnO3 (LSMO) (001) (x = 0.33) pour 3 épaisseurs de films (50, 25 et 12 nm) déposés par Ablation Laser Pulsée (PLD) sur différents substrats tels que SrTiO3 (STO) (001), STO buffered MgO (001), NdGaO3 (NGO) (110) et (LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) (001). L’étude est complétée par l’effet de la composition sur les propriétés magnétiques de couches minces de La1-xSrxMnO3 avec x=0,33 et 0,38 déposées par Epitaxie à Jets Moléculaires (MBE). Des caractérisations par diffraction de rayons X (XRD), et microscopie à force atomique (AFM), des mesures de résistivité électrique en quatre points en fonction de la température, d’aimantation par magnetometrie à SQUID (Superconducting Quantum Interference Device) et d’anisotropie magnétique par magnétométrie magnéto-optique Kerr vectorielle (MOKE) sont présentées. Les évolutions angulaires de l’anisotropie magnétique, de l’aimantation à rémanence, du champ coercitif et du champ de renversement d’aimantation ont ainsi pu être analysées pour des films épitaxiés LSMO de différentes épaisseurs. Des études en fonction de la température complètent les données. L’origine de l’anisotropie (magnétique, magnétocristalline, magnétostrictive ou liée aux effets de marches et d’angle de désorientation du substrat) est finalement discutée. / We report a quantitative analysis of thickness dependent epitaxial strain-induced effects in La1-xSrxMnO3 (LSMO) (001) (x = 0.33) thin films of thicknesses (50, 25 and 12 nm) grown on various single crystal substrates such as SrTiO3 (STO) (001), STO buffered MgO (001), NdGaO3 (NGO) (110) and (LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) (001) by Pulsed Laser Deposition (PLD) technique. We also report the composition dependent magnetic properties of LSMO thin films with x = 0.33 and 0.38 in particular grown onto LSAT (001) substrate by Molecular Beam Epitaxy (MBE). The study mainly includes measurements such as X-ray Diffraction (XRD), Atomic Force Microscopy (AFM), temperature dependent four-probe resistivity, magnetization properties by Superconducting Quantum Interference Device (SQUID), magnetic anisotropy by Magneto-Optical Kerr Magnetometry (MOKE). Our results highlight the detailed study of angular evolution and thickness dependent magnetic anisotropy, remanence, coercivity and switching field in epitaxial LSMO thin films. Temperature-dependent studies are also performed on few selected films. We will also discuss the cause of magnetic anisotropy in LSMO films i.e., magneto-crystalline and magnetostriction anisotropy and the effects of steps or substrate mis-cut induced anisotropy.