Weyl semimetals feature linear band crossings with non-trivial topological properties. These (Weyl) points can have a strong impact on the transport response, when they are located close to the Fermi level. The Weyl points can lead to, among other things, a large anomalous Hall effect. Co3Sn2S2 is a prototypical candidate of this material class and displays intriguing physics, originating from its topological as well as magnetic properties. Many interesting transport responses, including the anomalous Hall effect and the anomalous Nernst effect have been found to be realised in this compound. Previous experiments have been carried out exclusively in (bulk) single crystals of Co3Sn2S2. It is demonstrated in this thesis, that microsturctures with well defined contacts can fabricated from bulk single crystals using focused ion beam cutting. Laser lithography is employed to define the electrical contacts to the micro ribbons. The microstructured devices are used to study the evolution of the magnetoresistance and magnetothermopower with magnetic field and temperature. The magnetoelectric transport response in Co3Sn2S2 is addressed in the first part of this thesis. Co3Sn2S2 exhibits a particularly large anomalous Hall effect in the transverse magnetoresistance. The anomalous Hall conductivity is found to be independent of the longitudinal conductivity, suggesting an intrinsic origin of the anomalous Hall effect. This notion is further corroborated by comparing the experimental results with band structure calculations, using the Berry curvature. Furthermore, the agreement between measurements on the microstructures with measurements on single crystals demonstrates the high quality of the microstructured devices. Additionally to the transverse magnetoresistance also the longitudinal magnetoresistance of Co3Sn2S2 is studied. The magnetoresistance decreases with increasing magnetic field for temperatures above 100 K. Futhermore, the magnetoresistance is found to be highly anisotropic with respect to the direction of the magnetic field. The negative magnetoresistance can be consistently explained invoking the magnon magnetoresistance. This effect is present in the ferromagnetic as well as the paramagnetic phase and is the dominant magnetoresistance effect above 100 K. The remarkably strong magneto-crystalline anisotropy of Co3Sn2S2 along its crystalline c-axis leads to the interesting observation, that the magnon magnetoresistance appears to depend on the projection of the external magnetic field on the magnetization. At low temperatures, magnon modes are frozen out and the magnon magnetoresistance vanishes. However, the anisotropy of the carrier mobilities gives rise to an anisotropic orbital magnetoresistance. Interestingly, no clear signs of crystalline/non-crystalline anisotropic magnetoresistance, depending on the magnetization direction, can be observed. The salient features in the magnetoelectric response can be understood through the comprehensive investigations reported in this thesis. In the second part, the thermal counterparts of the magnetoelectric transport responses are investigated. Again, a surprisingly large transverse (Nernst) effect is found. The Nernst conductivity reaches up to 4 A/(m K) in Co3Sn2S2. Unlike their magnetoelectric counterparts, the Nernst coefficient and the Nernst conductivity exhibit a sign change as a function of temperature. These experimental results strengthen the theoretical framework, that the anomalous Hall and Nernst effect probe different states. Furthermore, an additional contribution at the magnetic phase transition can be identified using the Mott relation. This contribution indicates that the anomalous Nernst conductivity can be enhanced by magnetic fluctuations near the magnetic ordering temperature. It appears to be a generic contribution in ferromagnetic materials and it is so far not accounted for by this particular formulation of the Mott relation. This subtle feature is uncovered when comparing the large magnetoelectric and magnetothermal transport response in the magnetic Weyl semimetal Co3Sn2S2.

The hole-doped perovskite manganese oxide such as Ln1-xAxMnO3 (Ln = La, Nd, Pr, and A = Ca, Sr, Ba, Pb) is one of the most studied topics in the recent years due to the observation of colossal magnetoresistance (CMR). Basically, LaMnO3 has an almost insulating behavior and on antiferromagnetic arrangement. By substituting a divalent cation (A2+) in place of La3+, LaMnO3 can be driven into metallic and ferromagnetic state. Mixed valence of Mn 3+ / Mn4+ is needed for both metallic behavior and ferromagnetism in these materials. The CMR characteristic occurs in the ferromagnetic state. A systematic investigation of the structural, magnetic and electrical properties in the perovskite colossal magnetoresistance materials La0.7-xLnxPb0.3Mn1-yMeyO3 (Ln=Pr, Nd and Y, Me=Fe and Co) has presented in this thesis. By subatituting Nd, Pr, Y for the La and Co, Fe for the Mn, the substitution effects on the crystallographic deformation, magnetotransport behavior and electrical properties in these compounds have been studied. According to the results of this research, crystallographic distortion is induced by the substitution of smaller ions, Pr or Nd, onto the La-site. Powder $x$-ray diffraction patterns show a crystallographic transition from rhombohedral symmetry (R-3c) to orthorhombic (Pbnm) crystal structure as the doping content is increased. The increase of deformation from R-3c to Pbnm decreases the bond angle of Mn3+¡ÐO2-¡ÐMn4+ , increases the cant of Mn spin, weakens the double-exchange interaction and results in decrease of ferromagnetism, low ferromagnetic transition temperature Tc, eg electron bandwidth and conductivity. However, the great quantity of decrease in resistivity by an external field leads to the increase in the magnetoresistance ratio. We also find that the increase of saturation magnetization results from the contribution of magnetic ion of Pr or Nd. In addition. in contrast to substitution La by magnetic ion of Pr and Nd, the saturation magnetization is decreased as Y content is increased. The zero-field-cool (ZFC) and field-cool (FC) magnetic measurements indicate that the range of spin ordering for Y one is shorter than Pr one or Nd one with the same doping content. It is because of the small ionic radius of Y, which results in larger distortion, increases the bond angle of Mn3+¡ÐO2-¡ÐMn4+, and corresponds low ferromagnetic transition temperature. The distortion induced by Mn-site substitution is not obvious due to the similar radius of Mn, Co and Fe. Powder x-ray diffraction patterns show a single phase of rhombohedral symmetry (R-3c) for Co doped ststem and a slight crystallographic transition from rhombohedral (R-3c) to orthorhombic (Pbnm) symmetry for Fe doped system. Values of temperature dependence of magnetization indicate that the ferromagnetic double-exchange interaction is gradually substituted by the superexchange interaction. The ZFC-FC curves also indicate that long-range spin ordering is progressively substituted by the short-range spin ordering. The substitution of Mn by Co and Fe supresses the double-exchange interaction, decreases the ferromagnetism and the ferromagnetic transition temperature. Due to the synthesis of the substitution of Nd, Pr, Y for La and Co, Fe for Mn, the mechanism of substitution effects are proved different. The substitution of Nd, Pr and Y for La distorts the crystal, decreases the Mn3+¡ÐO2-¡ÐMn4+ bond angle, and results in the transition of properties, while the substitution of Co and Fe for Mn decrease the percentage of ferromagnetic Mn3+¡ÐO2-¡ÐMn4+. The purpose of this thesis is to clear up the role functions of all elements in these compounds and properties of these compounds. Based on the knowledge of these compounds, it would be helpful to control the physical mechanism and improve the characteristics on preparing their thin film devices.

Die vorliegende Arbeit ist ein Beitrag zur Theorie des spinabhängigen Transports in magnetischen Vielfachschichten. Es wird erstmalig eine parameterfreie Beschreibung des Giant Magnetoresistance (GMR) vorgelegt, welche detaillierte Einsichten in die mikroskopischen Vorgänge gestattet. Die ab-initio Berechnung der Elektronenstruktur der magnetischen Vielfachschichten basiert auf der Spindichtefunktionaltheorie unter Verwendung eines Screened Korringa-Kohn-Rostoker-Verfahrens. Die Streueigenschaften von Punktdefekten werden über die Greensche Funktion des gestörten Systems selbstkonsistent bestimmt. Die Transporteigenschaften werden durch Lösung der quasiklassischen Boltzmann-Gleichung unter Berücksichtigung der Elektronenstruktur der Vielfachschicht und der Anisotropie der Streuung an Fremdatomen berechnet. Die Boltzmann-Gleichung wird iterativ unter Einbeziehung der Vertex-Korrekturen gelöst. Der Formalismus wird auf Co/Cu- und Fe/Cr-Vielfachschichten, die Standardsysteme der Magnetoelektronik, angewandt. Es werden die Abhängigkeit der Streuquerschnitte, der spezifischen Restwiderstände und des GMR von der Art und der Lage der Übergangsmetalldefekte in Co/Cu- und Fe/Cr-Vielfachschichten diskutiert. Darüber hinaus wird der Einfluß des Quantum Confinements auf den GMR eingehend untersucht. Vorteile und Grenzen der vorliegenden theoretischen Beschreibung werden aufgezeigt. / A new theoretical concept to study the microscopic origin of Giant Magnetoresistance (GMR) from first principles is presented. The method is based on ab-initio electronic structure calculations within the spin density functional theory using a Screened Korringa-Kohn-Rostoker method. Scattering at impurity atoms in the multilayers is described by means of a Green's-function method. The scattering potentials are calculated self-consistently. The transport properties are treated quasi-classically solving the Boltzmann equation including the electronic structure of the layered system and the anisotropic scattering. The solution of the Boltzmann equation is performed iteratively taking into account both scattering out and scattering in terms (vertex corrections). The method is applied to Co/Cu and Fe/Cr multilayers. Trends of scattering cross sections, residual resistivities and GMR ratios are discussed for various transition metal impurities at different positions in the Co/Cu or Fe/Cr multilayers. Furthermore the relation between spin dependence of the electronic structure and GMR as well as the role of quantum confinement effects for GMR are investigated. Advantages and limits of the approach are discussed in detail.

No description available.

La compréhension des propriétés de transport de charge des nanostructures métalliques et magnétiques est très importante pour le développement et la miniaturisation des dispositifs fonctionnels modernes. En particulier, les nanostructures synthétisées chimiquement sont intéressant car elles permettent de mieux contrôler leur forme et leur taille, ce qui peut être utilisé pour ajuster leurs propriétés de transport de charge. L'objectif de cette thèse est d'étudier les aspects différents des propriétés de transport de charge qui résultent de la petite taille et de la nature magnétique de différents types de nanostructures comprenant des nanoparticules de Pt (1,3-3 nm), des particules magnétiques FeCo (⁓10 nm), et complexe de coordination à base de triazole Fe (II). Pour préciser davantage, des phénomènes tels que le blocage de Coulomb, la magnétorésistance tunnel et la transition de spin seront mis en évidence. En fonction de la propriété souhaitée, ces nanostructures peuvent être exploitées pour leurs applications dans divers capteurs, actionneurs et dispositifs spintroniques, etc. / Understanding charge transport properties of metallic and magnetic nano-structures is highly important for the development and miniaturization of modern functional devices. In particular, chemically synthesized nano-structures are in focus as they provide better control over their shape and size, which can be used to tune their charge transport properties. The aim of this thesis is to study the various aspects of charge transport properties which emerge due to the small size and magnetic nature of different types of nanostructures which include Pt nanoparticles (1.3-3 nm), FeCo magnetic particles (⁓10 nm), and Fe (II) triazole based coordination complex. To further specify, phenomenon such as Coulomb blockade, tunnel magnetoresistance and spin-transition will be in focus. Depending on the desirable property, these nanostructures can be exploited for their applications in a variety of sensors, actuators and spintronic devices etc.

Die vorliegende Arbeit ist ein Beitrag zur Theorie des spinabhängigen Transports in magnetischen Vielfachschichten. Es wird erstmalig eine parameterfreie Beschreibung des Giant Magnetoresistance (GMR) vorgelegt, welche detaillierte Einsichten in die mikroskopischen Vorgänge gestattet. Die ab-initio Berechnung der Elektronenstruktur der magnetischen Vielfachschichten basiert auf der Spindichtefunktionaltheorie unter Verwendung eines Screened Korringa-Kohn-Rostoker-Verfahrens. Die Streueigenschaften von Punktdefekten werden über die Greensche Funktion des gestörten Systems selbstkonsistent bestimmt. Die Transporteigenschaften werden durch Lösung der quasiklassischen Boltzmann-Gleichung unter Berücksichtigung der Elektronenstruktur der Vielfachschicht und der Anisotropie der Streuung an Fremdatomen berechnet. Die Boltzmann-Gleichung wird iterativ unter Einbeziehung der Vertex-Korrekturen gelöst. Der Formalismus wird auf Co/Cu- und Fe/Cr-Vielfachschichten, die Standardsysteme der Magnetoelektronik, angewandt. Es werden die Abhängigkeit der Streuquerschnitte, der spezifischen Restwiderstände und des GMR von der Art und der Lage der Übergangsmetalldefekte in Co/Cu- und Fe/Cr-Vielfachschichten diskutiert. Darüber hinaus wird der Einfluß des Quantum Confinements auf den GMR eingehend untersucht. Vorteile und Grenzen der vorliegenden theoretischen Beschreibung werden aufgezeigt. / A new theoretical concept to study the microscopic origin of Giant Magnetoresistance (GMR) from first principles is presented. The method is based on ab-initio electronic structure calculations within the spin density functional theory using a Screened Korringa-Kohn-Rostoker method. Scattering at impurity atoms in the multilayers is described by means of a Green's-function method. The scattering potentials are calculated self-consistently. The transport properties are treated quasi-classically solving the Boltzmann equation including the electronic structure of the layered system and the anisotropic scattering. The solution of the Boltzmann equation is performed iteratively taking into account both scattering out and scattering in terms (vertex corrections). The method is applied to Co/Cu and Fe/Cr multilayers. Trends of scattering cross sections, residual resistivities and GMR ratios are discussed for various transition metal impurities at different positions in the Co/Cu or Fe/Cr multilayers. Furthermore the relation between spin dependence of the electronic structure and GMR as well as the role of quantum confinement effects for GMR are investigated. Advantages and limits of the approach are discussed in detail.

Systems that exhibit the extraordinary magnetoresistance (EMR) effect and other more disordered semiconductor-metal hybrid structures have been investigated numerically with the use of the finite element method (FEM). Initially, modelling focused on circular geometry EMR devices where a single metallic droplet is embedded concentrically into a larger semiconducting disk. The dependence of the magnetoresistance of such systems on the transverse magnetic field (0 5T) and filling factor (1/16 15/16) are reported and generally show a very good agreement with existing experimental data. The influence of the geometry of the conducting region of these EMR systems was then investigated. The EMR effect was found to be highly sensitive to the shape of the conducting region with a multi-branched geometry producing a four order of magnitude enhancement of the magnetoresistance over a circular geometry device of the same filling factor. Conformal mapping has previously been shown to transform a circular EMR device into an equivalent linear geometry. Such a linear EMR device has been modelled with the EMR mechanism clearly observed. The magnetoresistive response of a circular EMR device upon changes to: the mobility of the semiconducting region; the ratio of metal to semiconductor conductivity; and the introduction of a finite resistance at the semiconductor-metal interface, have also been investigated. In order for a large EMR effect to be observed the system requires: the semiconductor mobility to be large; the conductivity of the metal to be greater than two orders of magnitude larger than that of the semiconductor; and a very low interface resistance. This modelling procedure has been extended to include inhomogeneous semiconductor-metal hybrids with a more complex and disordered structure. Two models are presented, both based upon the random distribution of a small proportion of metal inside a semiconducting material. The resultant magnetoresistance in each case is found to have a quasi-linear dependence on magnetic field, similar to that observed in the silver chalcogenides.

No description available.

No description available.

No description available.