This study reports on the physical and optical characterization of scandium oxide thin films. Thin films of scandium oxide, 20-40 nm thick, were deposited on silicon wafers, quartz slides, and silicon photodiodes by reactively sputtering scandium in an oxygen environment. These samples were characterized using ellipsometry, high-resolution transmission electron microscopy, scanning transmission electron microscopy, and energy dispersive x-ray analysis. A 28.46 nm thick scandium oxide thin film was measured in the Extreme Ultraviolet (EUV) from 2.7 to 50 nm (459.3 to 24.8 eV) using synchrotron radiation at the Advanced Light Source Beamline 6.3.2 at the Lawrence Berkeley National Laboratory. In these measurements, a new method for data collection was used, in which the reflection and transmission data were collected simultaneously. Analysis of the EUV reflection and transmission data was performed using a front-side reflection, matrix-multiplication technique, which is novel among EUV analytical practice. During data analysis, a new weighting scheme was used, named "adaptive weighting". This analysis provides the first experimentally determined optical constants n and k for scandium oxide thin films from 4.5-30 nm. Also, the positions of the L2 and L3 electronic transitions of scandium oxide have been measured, at 3.069 and 3.101 nm (404.0 and 399.9 eV), respectively, while the measurements near the M transition suggest it to be at approximately 31.5 nm (39.4 eV). Comparing the electronic transition positions of scandium oxide to those of scandium show that the oxidation of scandium shifts the positions to lower energies. For L2 the shift is about 1.8 eV, for L3 the shift is about 1.4 eV, and for M the shift is about 1.9 eV. The binding energies of scandium oxide are greater than those of scandium, as is expected for an oxide compared to its parent metal. This trend in the shift of the transition positions is unexpected, and warrants further investigation.

Während über hexagonales (alpha) GaN zum ersten Mal 1932 berichtet wurde, gelang erst 1989 die Synthese einer mit Molekularstrahlepitaxie (MBE) auf 3C-SiC epitaktisch gewachsenen, metastabilen kubischen (eta) GaN Schicht. Die vorliegende Arbeit befaßt sich mit der Herstellung der Verbindungen eta-(In,Ga,Al)N mittels RF-Plasma unterstützter MBE auf GaAs(001) und den mikrostrukturellen sowie optischen Eigenschaften dieses neuartigen Materialsystems. Im Vergleich zur hexagonalen bietet die kubische Kristallstruktur auf Grund ihrer höheren Symmetrie potentielle Vorteile für die Anwendung in optischen und elektronischen Bauelementen. Viele wichtige Materialgrößen der kubischen Nitride sind jedoch noch gänzlich unbekannt, da sich die Synthese einkristalliner Schichten als sehr schwierig erweist. Das Ziel dieser Arbeit ist es daher erstens, die technologischen Grenzen der Herstellung von bauelementrelevanten kubischen (In,Ga,Al)N Heterostrukturen auszuweiten und zweitens, einen Beitrag zur Aufklärung der bis dato wenig bekannten optischen und elektronischen Eigenschaften des GaN und der Mischkristalle In GaN zu leisten. Zunächst wird ein optimierter MBE Prozess unter Einsatz einer Plasmaquelle hohen Stickstofflusses vorgestellt, welcher nicht nur die reproduzierbare Epitaxie glatter, einphasiger GaN Nukleationsschichten auf GaAs ermöglicht. Vielmehr können damit auch dicke GaN. Schichten mit glatter Oberflächenmorphologie hergestellt werden, welche die Grundlage komplizierterer eta-(In,Ga,Al)N Strukturen bilden. An einer solchen GaN Schicht mit einer mittleren Rauhigkeit von nur 1.5 nm werden dann temperaturabhängige Reflexions- und Transmissionsmessungen durchgeführt. Zur Auswertung der Daten wird ein numerisches Verfahren entwickelt, welches die Berechnung des kompletten Satzes von optischen Konstanten im Spektralgebiet 2.0 = 0.4 wären grün-gelbe Laserdioden. Zusammenfassung in PostScript / While the earliest report on wurtzite (alpha) GaN dates back to 1932, it was not until 1989 that the first epitaxial layer of metastable zincblende (eta) GaN has been synthesized by molecular beam epitaxy (MBE) on a 3C-SiC substrate. The present work focuses on radio frequency (RF) plasma-assisted MBE growth, microstructure, and optical properties of the eta-(In,Ga,Al)N material system on GaAs(001). Due to their higher crystal symmetry, these cubic nitrides are expected to be intrinsically superior for (opto-) electronic applications than the widely employed wurtzite counterparts. Owing to the difficulties of obtaining single-phase crystals, many important material constants are essentially unknown for the cubic nitrides. The aim of this work is therefore, first, to push the technological limits of synthesizing device-relevant zincblende (In,Ga,Al)N heterostructures and, second, to determine the basic optical and electronic properties of GaN as well as to investigate the hardly explored alloy InGaN. An optimized MBE growth process is presented which allows not only the reproducible nucleation of smooth, monocrystalline GaN layers on GaAs using a high-nitrogen-flow RF plasma source. In particular, thick single-phase GaN layers with smooth surface morphology are obtained being a prerequisite for the synthesis of ternary eta-(Ga,In,Al)N structures. Temperature dependent reflectance and transmittance measurements are carried out on such a GaN film having a RMS surface roughness as little as 1.5 nm. A numerical method is developed which allows to extract from these data the complete set of optical constants for photon energies covering the transparent as well as the strongly absorbing spectral range (2.0 -- 3.8 eV). Inhomogeneities in the refractive index leading to finite coherence effects are quantitatively analyzed by means of Monte Carlo simulations. The fundamental band gap EG(T) of GaN is determined for 5 < T < 300 K and the room temperature density of states is investigated. Systematic studies of the band edge photoluminescence (PL) in terms of transition energies, lineshapes, linewidths, and intensities are carried out for both alpha- and GaN as a function of temperature. Average phonon energies and coupling constants, activation energies for thermal broadening and quenching are determined. Excitation density dependent PL measurements are carried out for both phases in order to study the impact of nonradiative recombination processes at 300 K. A recombination model is applied to estimate the internal quantum efficiency, the (non)radiative lifetimes, as well as the ratio of the electron to hole capture coefficients for both polytypes. It is seen that the dominant nonradiative centers in the n-type material investigated act as hole traps which, however, can be saturated at already modest carrier injection rates. In summary, despite large defect densities in GaN due to highly mismatched heteroepitaxy on GaAs, band edge luminescence is observed up to 500 K with intensities comparable to those of state-of-the-art alpha-GaN. For the first time, thick InGaN films are fabricated on which blue and green luminescence can be observed up to 400 K for x=0.17 and x=0.4, respectively. Apart from bulk-like InGaN films, the first coherently strained InGaN/GaN (multi) quantum wells with In contents as high as 50 % and abrupt interfaces are grown. This achievement shows that a ternary alloy can be synthesized in a metastable crystal structure far beyond the miscibility limit of its binary constituents despite the handicap of highly lattice mismatched heteroepitaxy. The well widths of these structures range between 4 and 7 nm and are thus beyond the theoretically expected critical thickness for the strain values observed. It is to be expected that even higher In contents can be reached for film thicknesses below 5 nm. The potential application of such InGaN/GaN multi quantum wells with x >= 0.4 would thus be diode lasers operating in the green-yellow range. abstract in PostScript

Auf dielektrische Substrate wurden Schichten aus Gold thermisch aufgedampft. Die Schichten wurden neben anderen Methoden wie AFM oder der Messung der Schichtleitfähigkeiten hauptsächlich mit Hilfe der spektroskopischen IR-Ellipsometrie (SIRE) in einem Schichtdickenbereich von 4 bis 60 nm systematisch untersucht. Aus den primär ermittelten ellipsometrischen Parametern tan(Psi) und Delta lassen sich der Brechungsindex n und der Absorptionsindex k bestimmen und auch weitere Größen wie z.B. der elektrische Widerstand bzw. die elektrische Leitfähigkeit errechnen. Die untersuchten Schichten lassen sich anhand der optischen, topographischen und elektrischen Eigenschaften in drei Gruppen einteilen: Dielektrische, aus isolierten Goldinseln bestehende Filme (4 bis 6 nm), Schichten in einem Übergangsbereich (8 bis ca. 16 nm), metallische Schichten (ab ca. 16 nm). Die dielektrischen Goldinselfilme zeigen optische Eigenschaften, die bislang für keine anderen Proben beschrieben worden sind. Der Brechungsindex n ist hoch (4 bis 9 bei 2400/cm) und der Absorptionsindex k klein (0 bis 4 bei 2400/cm). Beide Indizes sind spektral weitgehend konstant. Daß diese Filme dielektrische Eigenschaften besitzen, steht in direktem Widerspruch zur allgemeinen SEIRA-Literatur. Die Inselstruktur der dielektrischen Filme verursacht einen Verstärkungseffekt, der als Oberflächenverstärkte Infrarotabsorption (surface-enhanced infrared absorption - SEIRA) bekannt ist. Es zeigte sich, daß die optischen Konstanten der Filme einen erheblichen Einfluß auf die SEIRA-Verstärkung ausüben. Um Inselfilme mit reproduzierbaren optischen Eigenschaften herstellen zu können, wurde ein lithographisches Verfahren entwickelt. Auf einer geschlossenen, homogenen Goldschicht wurden monodisperse Nanopartikel aus Polystyrol (PS) in einer Monolage deponiert. Die PS-Nanopartikel dienten in einem trockenen Ätzprozeß im Ar-Plasma als lithographische Maske, um die darunterliegende Au-Schicht zu strukturieren. / Thin films were produced on dielectric substrates by thermal evaporation of gold in a high vacuum chamber. These films were investigated systematically in a range between 4 and 60 nm thickness. The method mainly applied was the spectroscopic IR-ellipsometry (SIRE), in addition to other methods like AFM or sheet resistance measurement. The primary results are the ellipsometric parameters tan(Psi) and Delta. They were used to determine the refractive index n and the absorption index k. Electrical parameters can also be calculated. Depending on the optical, topographical and electrical properties the population of different layers can be divided into three parts: dielectric films with isolated gold islands (4 to 6 nm), layers in a transient area (8 to ca. 16 nm), metal films (ca. 16 to 60 nm). The optical properties shown by dielectric gold island films were never before described for other samples. The refractive index n is high (4 to 9 at 2400/cm) and the absorption index small (0 to 4 at 2400/cm). Both indices are nearly constant in the spectral range. Directly in contrast to the SEIRA-literature the island films show dielectric properties. The island structure of the dielectric films gives rise to an enhancement effect called surface-enhanced infrared absorption (SEIRA). It could be shown that the optical constants of the island films have a considerable influence on the enhancement factors. A lithographic method was developed in order to find a way for manufacturing island films with reproducible optical properties. Monodispers polystyrene nanoparticles were deposited in a monolayer on a dense gold layer on a dielectric substrate. The layer of nanoparticles was used as a mask for a dry etch process in a reactive Ar-plasma.

This Thesis is devoted to theoretical investigation of the effective magnetic properties of nonlinear metamaterials, based on resonant conductive elements.A general expression for the effective bulk ermeability in the microwave frequency range is derived. Frequency dispersion of the permeability is studied and recommendations for optimisation of metamaterials with negative permeability are given. The results are supported with numerical simulation of the finite metamaterial sample.Next, a metamaterial possessing nonlinear magnetic responseowing to nonlinear electronic components, inserted into resonant conductive elements, is proposed. For the limit of low nonlinearity, the arising quadratic nonlinear susceptibility is calculated; it is shown how it is controlled by the properties and arrangement of the structure elements as well as by the type and characteristics of the insertion.For the insertions operating in essentially nonlinear regime, when a nonlinear magnetic susceptibility cannot be introduced, an approach is developed for analyzing three-wave coupling processes with a strong pump wave and two weak signals. Peculiarities of coupling, arising from use the insertions with variable resistance or variable capacitance are discussed. Estimates are given that extremely strong nonlinear coupling can be achieved using typical diodes reported in literature.Finally, it is demonstrated how the metamaterial band gap can be tuned, and the resulting metamaterial switching between transmitting, reflecting and absorbing states is described. The details appear to depend drastically on the type of nonlinear components inserted into the resonant conductive elements. Relying on practical estimates, it is predicted that the transmittance of a metamaterial slab can be modulated by several orders of magnitude already using a slab with thickness equal to one microwave wavelength in vacuum.

We have measured the optical properties of films of the organic semiconductors PTCDA (3,4:9,10-perylene-tetracarboxylic dianhydride) and HBC (peri-hexabenzocoronene), prepared by Organic Molecular Beam Expitaxy (OMBE), on different substrates by means of Differential Reflectance Spectroscopy (DRS). The optical setup enables us to directly follow the thickness dependent optical properties of the organic films, starting from submonolayer coverage up to thicker films on the order of 20 monolayers (ML) film thickness. Due to the different optical nature of the different substrates used, i.e., mica, glass, Au(111), and HOPG, the direct interpretation of the DRS signal is not feasible. Therefore, we have proposed a method by which the calculation of the optical constants n (index of refraction) and k (absorption index) of thin films on arbitrary substrates from just one spectral measurement (in our case the DRS) becomes possible. The results fulfill a priori a Kramers-Kronig consistency and no specific model is needed to express the spectral behavior of the optical constants. Based on our method, we have successfully calculated the optical constants, and therefore the absorption behavior, of films of different thickness of PTCDA on mica, glass, Au(111), and HOPG, as well as of HBC on mica, glass, and HOPG. Extrinsic effects due to island growth or the presence of a polarizable substrate (screening) have been accounted for. We have introduced a finite dipole model which considers the extended geometry and anisotropy of the organic molecules. The calculated absorption behavior is discussed in great detail in terms of spectral changes with varying film thickness, different growth modes, degree of ordering of the films, interactions with the substrates and oscillator strength. A direct observation of a monomer-dimer transition in solid films could be observed for the first time. Our results indicate an exciton delocalization over about 4 molecules for both molecules.

We have measured the optical properties of films of the organic semiconductors PTCDA (3,4:9,10-perylene-tetracarboxylic dianhydride) and HBC (peri-hexabenzocoronene), prepared by Organic Molecular Beam Expitaxy (OMBE), on different substrates by means of Differential Reflectance Spectroscopy (DRS). The optical setup enables us to directly follow the thickness dependent optical properties of the organic films, starting from submonolayer coverage up to thicker films on the order of 20 monolayers (ML) film thickness. Due to the different optical nature of the different substrates used, i.e., mica, glass, Au(111), and HOPG, the direct interpretation of the DRS signal is not feasible. Therefore, we have proposed a method by which the calculation of the optical constants n (index of refraction) and k (absorption index) of thin films on arbitrary substrates from just one spectral measurement (in our case the DRS) becomes possible. The results fulfill a priori a Kramers-Kronig consistency and no specific model is needed to express the spectral behavior of the optical constants. Based on our method, we have successfully calculated the optical constants, and therefore the absorption behavior, of films of different thickness of PTCDA on mica, glass, Au(111), and HOPG, as well as of HBC on mica, glass, and HOPG. Extrinsic effects due to island growth or the presence of a polarizable substrate (screening) have been accounted for. We have introduced a finite dipole model which considers the extended geometry and anisotropy of the organic molecules. The calculated absorption behavior is discussed in great detail in terms of spectral changes with varying film thickness, different growth modes, degree of ordering of the films, interactions with the substrates and oscillator strength. A direct observation of a monomer-dimer transition in solid films could be observed for the first time. Our results indicate an exciton delocalization over about 4 molecules for both molecules.

In der vorliegenden Arbeit werden die nichtlinearen optischen Eigenschaften der Materialien Lithiumniobat und Di-Zinn-Hexathiohypodiphosphat aufgrund der Suszeptibilität 3. Ordnung und kleiner Polaronen untersucht. Zudem wird gezeigt, dass die Interferenz verschiedenfarbiger Laserpulse die Aufzeichnung von statischen und dynamischen holographischen Gittern ermöglicht. Ein Teil dieser Arbeit ist in den im Anhang angegebenen 6 Publikationen bereits veröffentlicht. Lithiumniobat wird mit einer Erweiterung des Z-Scan Experiments untersucht, welches die Pulslängenabhängige Messung der nichtlinearen Absorption und der nichtlinearen Brechungsindexänderung ermöglicht. Dabei konnte festgestellt werden, dass bei sehr kurzen Pulslängen von 70 fs ein Effekt der Polaronen auf die nichtlineare Absorption vernachlässigbar ist und die Zwei-Photonen-Absorption die nichtlineare Absorption dominiert. Mit größerer Pulslänge gibt es allerdings Abweichungen zwischen der Theorie der Zwei-Photonen-Absorption und den Messergebnissen. Mit der Entwicklung eines Polaronen-Anregungs-Modells, welches eine polaronische Absorption aufgrund wiederholtem optisch induziertem Hopping annimmt, konnte dieser Effekt konsistent erklärt werden. Die Messungen der nichtlinearen Brechungsindexänderung lassen darauf schließen, dass sowohl freie Ladungsträger als auch kleine Polaronen neben der Suszeptibilität 3. Ordnung einen Einfluss auf die Brechungsindexänderung haben, da eine nichtlineare Abhängigkeit von der Intensität auch bei Pulslängen von 70 fs festgestellt werden konnte. Analog dazu konnte in Di-Zinn-Hexathiohypodiphosphat ein großer Zwei-Photonen-Absorptionskoeffizient festgestellt werden, welcher für Photonenenergien nahe der Bandkante Werte zeigt, die größer sind als theoretischen Überlegungen zeigen. Eine transiente Absorption nach optischer Anregung, gemessen durch ein Anreg-Abtast-Experiment, sowie Literatur legen nahe, dass in Di-Zinn-Hexathiohypodiphosphat gebundene Lochpolaronen durch optische Anregung entstehen können. Durch den hohen Zwei-Photonen-Absorptionskoeffizienten konnte das Aufzeichnen eines kontrastreichen, dynamischen Amplitudengitters mittels Femtosekundenpulsen gezeigt und nachgewiesen werden. Die Kürze der Femtosekundenpulse ermöglicht aber nicht nur das Aufzeichnen eines Zwei-Photonen-Absorptionsgitters aufgrund der hohen Intensitäten, sondern erlaubt zudem die Beobachtung von Interferenz zwischen verschiedenfarbigen Pulsen. In der Zeitspanne der Pulslänge beträgt die Bewegung der Interferenzstreifen, welche in der Größenordnung der Lichtgeschwindigkeit liegt, nur ein Bruchteil der Streifendistanz, sodass das Interferenzmuster eingefroren und beobachtbar erscheint. Somit lassen sich statische Hologramme in holographischen Filmen, wie auch dynamische Hologramme aufzeichnen. Über ein dynamisches holographisches Gitter mittels Zwei-Photonen-Absorption konnte so eine Frequenzkonversion durch Dopplerverschiebung in Lithiumniobat gezeigt werden.