Les travaux présentés dans ce mémoire visent à améliorer la méthodologie de conception et les performances des stratégies de protection contre les décharges électrostatiques (ESD) dans les circuits intégrés. Pour cela, l'approche choisie est basée sur une analyse approfondie de la physique des composants soumis aux ESD et plus particulièrement, les effets des très fortes densités de courant. L'étude, focalisée sur les transistors bipolaires autopolarisés, s'appuie sur la simulation physique 2D et l'utilisation des outils de localisation de défaillance basés sur les techniques de stimulation laser. L'analyse physique en résultant a permis d'une part, de définir des règles de dessin universelles pour l'obtention d'une robustesse ESD élevée et d'autre part, de proposer des macro-modèles de type SPICE originaux pour prendre en compte les effets des fortes densités de courant. Enfin, après avoir mis en évidence plusieurs phénomènes limitant les performances des réseaux de protection, nous avons défini une méthodologie de conception améliorée permettant de les prendre en compte et de garantir la performance des solutions de protections fournies aux concepteurs de circuits.

Le développement de dispositifs OLED pour des applications dans les afficheurs ou l'éclairage nécessite généralement une approche expérimentale longue et coûteuse afin de déterminer les paramètres clés influant sur les performances. Le but d'une modélisation électrique est de remplacer ce système complexe par un objet simple et de reproduire voire prédire ses comportements principaux (caractéristique Intensité-Tension, J-V) afin de limiter le nombre de séries d'expériences. Une première méthode consiste à utiliser des modèles continus de bandes d'énergie, issus des semiconducteurs cristallins. Cette modélisation par éléments finis 2D a notamment permis de rendre compte des variations d'épaisseurs des couches organiques pour des densités de courant élevées (50 < J < 7x10^3 mA/cm2). Nous avons également montré l'intérêt des simulations 2D pour étudier des architectures complexes avec une électrode nanostructurée. Une seconde méthode réside dans le développement d'un modèle électrique compact, de type composants, compatible avec les outils professionnels de CAO électronique. Le circuit équivalent proposé sépare les phénomènes d'injection et de transport de charges. Il reproduit précisément, avec seulement 8 paramètres obtenus à partir de mesures simples, les caractéristiques statiques J-V sur une grande plage de densités de courant (de 10^-6 à 7x10^3 mA/cm2) ainsi que le comportement dynamique global jusqu'au MHz. Ce modèle permet la simulation de systèmes complexes tels que les écrans matriciels avec leur circuit d'adressage. Par ailleurs, l'analyse et la quantification de l'influence de différentes variations expérimentales en font un outil de développement et/ou de contrôle de production. Les résultats acquis et les perspectives montrent l'intérêt de disposer d'outils de modélisation pour développer des composants ou des dispositifs performants à base d'OLEDs.

Hot-wire chemical vapour deposition (HWCVD) is a promising technique that permits polycrystalline silicon films with grain size of nanometers to be obtained at high deposition rates and low substrate temperatures. This material is expected to have better electronic properties than the commonly used amorphous hydrogenated silicon (a-Si:H).In this work, thin-film transistors (TFTs) were fabricated using nanocrystalline hydrogenated silicon film (nc-Si:H), deposited by HWCVD over thermally oxidized silicon wafer. The employed substrate temperature during the deposition process permits inexpensive materials as glasses or plastics to be used for various applications in large-area electronics. The deposition rate was about one order of magnitude higher than in other conventionally employed techniques. The deposited nc-Si:H films show good uniformity and reproducibility. The films consist of vertically grown columnar grains surrounded by amorphous phase. The columnar grains are thinner at the bottom (near the oxide interface) and thicker at the top of the film. Chromium layer was evaporated over the nc-Si:H in order to form drain and source contacts. Using photolithography techniques, two types of samples were fabricated. The first type (simplified) was with the chromium contacts directly deposited over the intrinsic nc-Si:H layer. No dry etching was involved in the fabrication process of this sample. The transistors on the wafer were not electrically separated from each other. Doped n+ layer was incorporated at the drain and source contacts in the second type of samples (complete samples). Dry etching was employed to eliminate the nc-Si:H between the TFTs and to isolate them electrically from each other.The electrical characteristics of both types of nc-Si:H TFTs were similar to a-Si:H based TFTs. Nevertheless, some significant differences were observed in the characteristics of the two types of samples. The increasing of the off-current in the simplified structure was eliminated by the n+ layer in the second type of samples. This led to the improving of the on/off ratio. The n+ layer also eliminated current crowding of the output characteristics. On the other hand, the subthreshold slope, the threshold voltage and the density of states were slightly deteriorated in the samples with incorporated n+ layer. Surface states created by the dry etching could be a possible reason. Other cause could be a bad quality of the nc-Si:H/SiO2 interface. The TFTs with incorporated n+ contact layer and electrically separated on the wafer were used in the further studies of stability and device modelling.The nc-Si:H TFTs were submitted under prolonged positive and negative gate bias stress in order to study their stability. We studied the influence of the stressing time and voltage on the transfer characteristics, threshold voltage, activation energy and density of states. The threshold voltage increased under positive gate bias stress and decreased under negative gate bias stress. After both positive and negative stresses, the threshold voltage recovered its initial values without annealing. This behaviour indicated that temporary charge trapping in the channel/gate insulator interface is the responsible process for the device performance under stress. Measurements of space-charge limited current confirmed that bulk states were not affected by the positive nor by negative stress.Analysis of the activation energy and the density of states gave more detailed information about the physical processes taking place during the stress. Typical drawback of the nc-Si:H films grown by HWCVD with tungsten (W) filament is the bad quality of the bottom, initially grown, interfacial layer. It is normally amorphous and porous. We assume that this property of the nc-Si:H film is determining for charge trapping and the consecutive temporary changes of the TFT's characteristics. On the other hand, the absence of defect-state creation during the gate bias stress demonstrates that the nc-Si:H films did not suffer degradation under the applied stress conditions. The electrical characteristics and the operational regimes of the nc-Si:H TFTs were studied in details in order to obtain the best possible fit using the Spice models for a-Si:H and poly-Si TFTs existing until now. The analysis of the transconductance gm showed behaviour typical for a-Si:H TFTs at low gate voltages. In contrast, at high gate voltages unexpected increasing of gm was observed, as in poly-Si TFTs. Therefore, it was impossible to fit the transfer and output characteristics with the a-Si:H TFT model neither with poly-Si TFT model.We performed numerical simulations using the Silvaco's Atlas simulator of semiconductor devices in order to understand the physical parameters, responsible for the device behaviour. The simulations showed that the reason for this behaviour is the density of acceptor-like states, which situates the properties of nc-Si:H TFTs between the amorphous and the polycrystalline transistors. Taking into account this result, we performed analysis of the concentrations of the free and the trapped carriers in nc-Si:H layer. It was found that nc-Si:H operates in transitional regime between above-threshold and crystalline-like regimes. This transitional regime was predicted earlier, but not experimentally observed until now. Finally, we introduced new equations and three new parameters into the existing a-Si TFTs model in order to account for the transitional regime. The new proposed model permits the shapes of the transconductance, the transfer and the output characteristics to be modelled accurately.

This paper introduces a high-gain, low-noise band-pass filter system for detection/amplification of small signals. In addition, related theory and methodology are described for a specific design implementation. Simulation and experimental results are presented and discussed. The purpose of the implemented design was to construct a band-pass filter system with 102 dB gain and with an output noise level of less than 0.8V. The design of the high-gain band-pass filter system was achieved mainly with the help of Filter Pro, LTSpice IV, and Multisim 12. The thesis provides important support for the project Marker Locator and constitutes a valuable reference for future active filter system design and small signal detection/amplification. / Marker Locator

Les agressions électriques, du type décharges électrostatiques (ESD) et surcharges électriques (EOS), sont à l'origine de plus de 50% des défaillances des circuits intégrés. De plus, avec l'avènement des technologies sans fil et des applications dites "plus électriques" en automobile et dans l'aviation, les spécifications de robustesse à ces agressions se sont considérablement durcies. Dans le même temps, la réduction des dimensions et la complexité croissante des technologies pose le problème de leur susceptibilité à ces contraintes EOS/ESD et de la probabilité non négligeable de génération de défauts latents. Enfin, les niveaux de fiabilité exigés maintenant dans la plupart des applications sont extrêmement élevés. Afin de répondre à ces nouvelles exigences, la détection des défauts latents est devenue indispensable, notamment pour des applications comme celles du domaine spatial. Or, la diminution des dimensions lithographiques a pour conséquence une augmentation des courants de repos des circuits microélectroniques. Cette augmentation rend difficile voire impossible la détection de défauts latents susceptibles de " dé-fiabiliser " des systèmes microélectroniques. Nous avons, dans cette thèse, étudié l'impact de défauts latents induits par stress ESD de type CDM sur la fiabilité de circuits et proposé une nouvelle méthodologie pour leur détection. Issue du domaine des radio fréquences, cette méthodologie basée sur des mesures du bruit basse fréquence nous a permis de mettre en évidence, avec une meilleure sensibilité, des défauts latents dans de simples structures de protections ESD mais aussi dans des circuits commerciaux complexes soumis à des décharges de type CDM. Différentes techniques de localisation par stimulation laser ont été mises en oeuvre pour la détection physique des défauts générés et corroborer l'analyse des mécanismes physiques à l'origine de l'augmentation du bruit.

Thesis (MSc Food Sc)--University of Stellenbosch, 2011. / ENGLISH ABSTRACT: Near infrared hyperspectral imaging (NIR HSI) in conjunction with multivariate image analysis was evaluated for the detection of millet and buckwheat flour in ground black pepper. Additionally, midinfrared (MIR) spectroscopy was used for the quantification of millet and buckwheat flour in ground black pepper. These techniques were applied as they allow non-destructive, invasive and rapid analysis. Black pepper and adulterant (either millet or buckwheat flour) mixtures were made in 5% (w/w) increments spanning the range 0-100% (w/w). The mixtures were transferred to eppendorf tube holders and imaged with a sisuChema short wave infrared (SWIR) pushbroom imaging system across the spectral range of 1000–2498 nm. Principal component analysis (PCA) was applied to pseudo-absorbance images for the removal of unwanted data (e.g. background, shading effects and bad pixels). PCA was subsequently applied to the ‘cleaned’ data. An adulterant concentration related gradient was observed in principal component one (PC1) and a difference between black pepper adulterated with buckwheat and millet was noted in PC4. Four absorption peaks (1461, 2241, 2303 and 2347 nm) were identified in the loading line plot of PC1 that are associated with protein and oil. The loading line plot of PC4 revealed absorption peaks at 1955, 1999, 2136 and 2303 nm, that are related to protein and oil. Partial least squares discriminant analysis (PLS-DA) was applied to NIR HSI images for discrimination between black pepper adulterated with varying amounts of adulterant (millet or buckwheat). The model created with millet adulterated black pepper samples had a classification accuracy of 77%; a classification accuracy of 70% was obtained for the buckwheat adulterated black pepper samples. An average spectrum was calculated for each sample in the NIR HSI images and the resultant spectra were used for the quantification of adulterant (millet or buckwheat) in ground black pepper. All samples were also analysed using an attenuated total reflectance (ATR) Fourier transform (FT) – infrared (IR) instrument and MIR spectra were collected between 576 and 3999 cm-1. PLS regression was employed. NIR based predictions (r2 = 0.99, RMSEP = 3.02% (w/w), PLS factor = 4) were more accurate than MIR based predictions (r2 = 0.56, RMSEP = 19.94% (w/w), PLS factors = 7). Preprocessed NIR spectra revealed adulterant specific absorption bands (1743, 2112 and 2167 nm) whereas preprocessed MIR spectra revealed a buckwheat specific signal at 1574 cm-1. NIR HSI has great promise for both the qualitative and quantitative analysis of powdered food products. Our study signals the beginning of incorporating hyperspectral imaging in the analysis of powdered food substances and results can be improved with advances in instrumental development and better sample preparation. / AFRIKAANSE OPSOMMING: Die gebruik van naby infrarooi hiperspektrale beelding (NIR HB) tesame met veelvoudige beeldanalise is ondersoek vir die opsporing van stysel-verwante produkte (giers en bokwiet) in gemaalde swart pepper. Middel-infrarooi (MIR) spektroskopie is addisioneel gebruik vir die kwantifisering van hierdie stysel-verwante produkte in swart pepper. Albei hierdie tegnieke is toegepas aangesien dit deurdringend van aard is en dit bied nie-destruktiewe sowel as spoedige analise. Swart pepper en vervalsingsmiddel (giers of bokwiet) mengsels is uitgevoer in 5% (m/m) inkremente tussen 0 en 100% (m/m). Eppendorfbuishouers is met die mengsels gevul en hiperspektrale beelde is verkry deur die gebruik van ‘n sisuChema SWIR (kortgolf infrarooi) kamera met ‘n spektrale reikwydte van 1000–2498 nm. Hoofkomponent-analise (HK) is toegepas op pseudo-absorbansie beelde vir die verwydering van ongewenste data (bv. agtergrond, skadu en dooie piksels). Hoofkomponent-analise is vervolgens toegepas op die ‘skoon’ data. Hoofkomponent (HK) een (HK1) het die aanwesigheid van ‘n vervalsingsmiddel konsentrasie verwante gradient getoon terwyl HK4 ‘n verskil getoon het tussen swart pepper vervals met giers en bokwiet. Vier absorpsiepieke (1461, 2241, 2303 en 2347 nm) was geïdentifiseer binne die HK lading stip van HK1 wat met proteïen en olie geassosieer kon word. Die HK lading stip van HK4 het absorpsipieke by 1955, 1999, 2136 en 2303 nm aangedui wat verband hou met proteïen en olie. Parsiële kleinste waarde diskriminant-analise (PKW-DA) is toegepas op die hiperspektrale beelde vir die moontlike onderskeiding tussen swart pepper vervals met verskeie hoeveelhede vervalsingsmiddel (giers of bokwiet). ‘n Klassifikasie koers van 77% is verkry vir die model ontwikkel met giers vervalsde swart pepper terwyl die model ontwikkel met bokwiet vervalsde swarte pepper ‘n klassifikasie koers van 70% bereik het. ‘n Gemiddelde spektrum is bereken vir elke monster in die hiperspektrale beelde en die resulterende spektra is gebruik vir die kwantifisering van vervalsingsmiddels (giers of bokwiet) in gemaalde swart pepper. ‘n ATR FT-IR instrument met spektrale reikwydte van 576-3999 cm-1 is additioneel gebruik vir die analise van alle monsters. Parsiële kleinste waarde regressie is gebruik vir kwantifikasie doeleindes. NIR gebasseerde voorspellings (r2 = 0.99, RMSEP = 3.02% (m/m), PLS faktore = 4) was meer akkuraat as die MIR gebasseerde voorspellings (r2 = 0.56, RMSEP = 19.94% (m/m), PLS faktore = 7). Vooraf behandelde NIR spektra het vervalsingsmiddel verwante absorpsiepieke (1743, 2112 en 2167 nm) aangetoon terwyl vooraf behandelde MIR spektra ‘n bokwiet verwante absorpsiepiek by 1574 cm-1 aangedui het. NIR HB toon goeie potensiaal vir beide kwalitatiewe en kwantitatiewe analise van gepoeierde voedsel produkte. Ons studie kan gesien word as die begin van die inkorporasie van hiperspektrale beelding in die analise van gepoeierde voedsel material en verbeterde resulte kan verkry word deur die vordering in instrumentasie ontwikkeling en verbeterde monstervoorbereiding.

A partir da atividade antibacteriana in vitro, predeterminada em doze plantas com indicativo etnográfico condimentar, testou-se este atributo in loco no modelo caldo com frango cozido. Primeiramente, procedeu-se ao treinamento de 10 avaliadores, segundo a legislação vigente quanto ao Consentimento Livre e Esclarecido, oportunizando conhecimentos prévios sobre as plantas: salsa (Petroselinum sativum), manjerona branca (Origanum X aplii), manjerona preta (Origanum majorana), manjericão (Ocimum basilicum), sálvia (Salvia officinalis), tomilho (Thymus vulgaris), anis verde (Ocimum selloi), alfavaca (Ocimum gratissimum), alho nirá (Allium tuberosum), alho poró (Allium porrum), cúrcuma (Curcuma longa) e pimenta dedode- moça (Capsicum baccatum). Realizou-se, através da adição individualizada desses condimentos ao caldo com frango cozido, um Teste de Aceitação tipo escala hedônica, selecionando, dentre os doze condimentos, quatro deles que se destacaram sensorialmente, quais sejam: pimenta dedo-de-moça, alho nirá, alho poró e tomilho. Foi feito, então, um Teste de Aceitação de quantidades denominadas pequena, média e grande destes quatro condimentos, para determinação de sua intensidade sensorialmente melhor aceita. As quantidades eleitas (0,5 g de pimenta dedo-de-moça, 15 g de alho nirá, 15 g de alho poró e 5 g de tomilho) foram acrescidas ao caldo com frango cozido, sendo estes desafiados frente a Escherichia coli (ATCC 11229) a 10 UFC/ml, tendo como grupo-controle o caldo com frango cozido sem condimentos. O crescimento bacteriano foi aferido a cada duas horas após a inoculação, até às 24 horas de confronto, utilizando-se meio seletivo para coliformes termoresistentes e incubação constante a 25ºC em DBO, sendo atribuídos valores arbitrários às variações logarítmicas de crescimento. Comparados ao controle, todos os tratamentos condimentados apresentaram, individualmente, atividade antibacteriana significativa, mesmo que sem significância quando comparados entre si. Contudo, em relação ao tempo de início da atividade antibacteriana, destacou-se a pimenta dedo-de-moça, enquanto que, em relação ao prolongamento dessa ação no tempo, destacou-se o tomilho. As plantas condimentares testadas tiveram sua atividade anticoliforme termo-resistente comprovada in loco, indicando sua aplicabilidade relacionada à qualificação sanitária e sensorial de caldo com frango cozido nos paradigmas da alimentação e nutrição sustentáveis. / From the antibacterial activity of 12 spice plants predetermined in tests in vitro by the Universidade do Rio Grande do Sul’s researchers, this activity was tested in the model “broth with cooked chicken”. A ten panelists group was firstly trained, as prescribed by the Free and Informed Consent, providing knowledge about the previously studied plants: parsley (Petroselinum sativum), marjoram (Origanum X aplii and Origanum majorana), basil (Ocimum basilicum), common sage (Salvia officinalis), thyme (Thymus vulgaris), anis-like spice (Ocimum selloi), african basilicum (Ocimum gratissimum), nirá garlic (Allium tuberosum), leek (Allium porrum), turmeric (Curcuma longa) and “dedo-de-moça” chili (Capsicum baccatum). Those spices were individualized added in the broth, then were tested by an Acceptation Hedonic Test Scale-like, to provide the four more sensory acceptable: “dedo-de-moça” chili, nirá garlic, leek and thyme. A new Acceptation Test was performed using small, medium and large quantities of those spices, establishing their more acceptable sensory intensities. The elected quantities (0,5 g of “dedo-de-moça” chili, 15 g of nirá garlic, 15 g of leek and 5 g of thyme) was singly added to the broth with chicken, then challenged with Escherichia coli (ATCC 11229), in a 10 CFU/mL concentration. The control-group was the broth without spices. The bacterial growth was measured each two hours after the inoculation, until the 24 hours of confront, using a selective medium for thermoresistant coliforms under constant incubation at 25ºC in DBO. Arbitrary values were assigned to the logarithmic growth variations. Compared to the control-group, all the spiced treatments presented significant antibacterial activity, with no significant activity when compared with each other. However, in regard of the antibacterial activity starting time, “dedo-de-moça” chili stood out, whereas the thyme stood out in regard of the activity time extension. The spice plants tested had your anti thermoresistant coliforms activity testified in loco, indicating their applicability in the sanitary and sensory sustainable nourish qualification.

A partir da atividade antibacteriana in vitro, predeterminada em doze plantas com indicativo etnográfico condimentar, testou-se este atributo in loco no modelo caldo com frango cozido. Primeiramente, procedeu-se ao treinamento de 10 avaliadores, segundo a legislação vigente quanto ao Consentimento Livre e Esclarecido, oportunizando conhecimentos prévios sobre as plantas: salsa (Petroselinum sativum), manjerona branca (Origanum X aplii), manjerona preta (Origanum majorana), manjericão (Ocimum basilicum), sálvia (Salvia officinalis), tomilho (Thymus vulgaris), anis verde (Ocimum selloi), alfavaca (Ocimum gratissimum), alho nirá (Allium tuberosum), alho poró (Allium porrum), cúrcuma (Curcuma longa) e pimenta dedode- moça (Capsicum baccatum). Realizou-se, através da adição individualizada desses condimentos ao caldo com frango cozido, um Teste de Aceitação tipo escala hedônica, selecionando, dentre os doze condimentos, quatro deles que se destacaram sensorialmente, quais sejam: pimenta dedo-de-moça, alho nirá, alho poró e tomilho. Foi feito, então, um Teste de Aceitação de quantidades denominadas pequena, média e grande destes quatro condimentos, para determinação de sua intensidade sensorialmente melhor aceita. As quantidades eleitas (0,5 g de pimenta dedo-de-moça, 15 g de alho nirá, 15 g de alho poró e 5 g de tomilho) foram acrescidas ao caldo com frango cozido, sendo estes desafiados frente a Escherichia coli (ATCC 11229) a 10 UFC/ml, tendo como grupo-controle o caldo com frango cozido sem condimentos. O crescimento bacteriano foi aferido a cada duas horas após a inoculação, até às 24 horas de confronto, utilizando-se meio seletivo para coliformes termoresistentes e incubação constante a 25ºC em DBO, sendo atribuídos valores arbitrários às variações logarítmicas de crescimento. Comparados ao controle, todos os tratamentos condimentados apresentaram, individualmente, atividade antibacteriana significativa, mesmo que sem significância quando comparados entre si. Contudo, em relação ao tempo de início da atividade antibacteriana, destacou-se a pimenta dedo-de-moça, enquanto que, em relação ao prolongamento dessa ação no tempo, destacou-se o tomilho. As plantas condimentares testadas tiveram sua atividade anticoliforme termo-resistente comprovada in loco, indicando sua aplicabilidade relacionada à qualificação sanitária e sensorial de caldo com frango cozido nos paradigmas da alimentação e nutrição sustentáveis. / From the antibacterial activity of 12 spice plants predetermined in tests in vitro by the Universidade do Rio Grande do Sul’s researchers, this activity was tested in the model “broth with cooked chicken”. A ten panelists group was firstly trained, as prescribed by the Free and Informed Consent, providing knowledge about the previously studied plants: parsley (Petroselinum sativum), marjoram (Origanum X aplii and Origanum majorana), basil (Ocimum basilicum), common sage (Salvia officinalis), thyme (Thymus vulgaris), anis-like spice (Ocimum selloi), african basilicum (Ocimum gratissimum), nirá garlic (Allium tuberosum), leek (Allium porrum), turmeric (Curcuma longa) and “dedo-de-moça” chili (Capsicum baccatum). Those spices were individualized added in the broth, then were tested by an Acceptation Hedonic Test Scale-like, to provide the four more sensory acceptable: “dedo-de-moça” chili, nirá garlic, leek and thyme. A new Acceptation Test was performed using small, medium and large quantities of those spices, establishing their more acceptable sensory intensities. The elected quantities (0,5 g of “dedo-de-moça” chili, 15 g of nirá garlic, 15 g of leek and 5 g of thyme) was singly added to the broth with chicken, then challenged with Escherichia coli (ATCC 11229), in a 10 CFU/mL concentration. The control-group was the broth without spices. The bacterial growth was measured each two hours after the inoculation, until the 24 hours of confront, using a selective medium for thermoresistant coliforms under constant incubation at 25ºC in DBO. Arbitrary values were assigned to the logarithmic growth variations. Compared to the control-group, all the spiced treatments presented significant antibacterial activity, with no significant activity when compared with each other. However, in regard of the antibacterial activity starting time, “dedo-de-moça” chili stood out, whereas the thyme stood out in regard of the activity time extension. The spice plants tested had your anti thermoresistant coliforms activity testified in loco, indicating their applicability in the sanitary and sensory sustainable nourish qualification.

Afin de permettre de développer un modèle de mémoire non-volatile basée sur le transistor à nanotube de carbone à commande optique qui est utilisée dans des circuits électroniques neuromorphiques, il est nécessaire de comprendre les physiques électroniques et optoélectroniques des nanotubes de carbone, en particulier l’origine de l'effet mémoire que présente ces transistors. C’est dans ce contexte général que cette thèse s'intègre. Le travail est mené sur trois plans :• Caractériser électriquement et optoélectroniquement des structures de test des CNTFETs et des OG-CNTFETs.• Développer un modèle compact pour les contacts Schottky dans les transistors à nanotube de carbone de la façon auto-cohérente basé sur le diamètre et la nature du métal d’électrode en utilisant la méthode de la barrière effective avec les paramètres nécessaires calibrés.• Modéliser l'OG-CNTFET selon les régimes de fonctionnement, lecture, écriture, effacement ou programmation pour application à une mémoire non-volatile en intégrant le mécanisme de piégeage et dépiégeage à l’interface polymère/oxyde. / This PhD thesis presents a computationally efficient physics-based compact model for optically-gated carbon nanotube field effect transistors (OG-CNTFETs), especially in the non-volatile memory application. This model includes memory operations such as “read”, “write”, “erase” or “program”, and “reset” which are modeled using trapping and detrapping mechanisms at the polymer/oxide interface. The relaxation of the memory state is taken into account. Furthermore, the self-consistent modeling of Schottky barriers at contacts between the carbon nanotube channel and metal electrodes is integrated in this model applying the effective Schottky barrier method. The Schottky contact model can be included in CNTFET based devices for a typical biasing range of carbon nanotube transistors. This compact model is validated by the good agreement between simulation results and experimental data (I-V characteristics). In the non-volatile memory application, this model can fully reproduce device behaviors in transient simulations. A prediction study of the key technological parameter, the CNT diameter variety is established to expect its impact on the transistor performance, and more importantly, on the memory operation. In the other hand, this thesis presents a preliminary electric characterization (I-V) of CNTFETs and OG-CNTFETs for the device modeling database. A preliminary optoelectronic characterization method is proposed.

Afin de permettre le développement de modèles manipulables par les concepteurs, il est nécessaire de pouvoir comprendre le fonctionnement des nanotubes, en particulier le transport des électrons et leurs propriétés électroniques. C’est dans ce contexte général que cette thèse s’intègre. Le travail a été mené sur quatre plans : développement de modèles permettant la description des phénomènes physiques importants au niveau des dispositifs, expertise sur le fonctionnement des nano-composants permettant de dégager les ordres de grandeurs pertinents pour les dispositifs, les contraintes, la pertinence de quelques procédés de fabrication (reproductibilité, taux de défauts, collection de caractéristiques mesurées et développement éventuel d'expériences spécifiques, expertise et conception des circuits innovatifs pour l’électronique numérique avec ces nano-composants. / This PhD work presents a computationally efficient physics-based compact model for the Schottky barrier (SB) carbon nanotube field-effect transistor (CNTFET). This compact model includes a new analytical formulation of the channel charge, taking into account the influence of the source and drain SBs. Compact model simulation results (I–V characteristic and channel density of charge) as well as Monte Carlo simulation results, which are provided by a recent work, will be given and compared to each other and also to experimental data to validate the used approximations. Good agreement is observed over a large range of gate and drain biases. Furthermore, a scaling study is presented to examine the impact of technological parameters on the device figure of merit. Then, for the assessment of the SB on circuit performances, traditional logical circuits are designed using the SB-CNTFET compact model, and results are compared with a conventional CNTFET with zero-SB height. Finally, exploiting the particular properties of SB-CNTFETs, a three-valued static memory that is suitable for high density integration is presented.