Die Bedeutung von Leistungshalbleitern mit großem Bandabstand (Wide Band Gap, WBG) nahm in den letzten drei Jahrzehnten kontinuierlich zu. Diese Bauelemente haben das Potenzial, Silizium (Si) - Bauelemente in bestimmten Anwendungen sowie Leistungs- und Frequenzbereichen zu ersetzen. Siliziumkarbid (SiC)-Leistungshalbleiter sind die gegenwärtig am Weitesten entwickelten WBG-Leistungshalbleiter. Dank besonderer Materialeigenschaften zeichnen sich SiC-Leistungshalbleiter im Vergleich zu Si-Bauelementen durch einen geringeren spezifischen Widerstand, eine höhere Schaltgeschwindigkeit, geringere schaltverluste sowie eine höhere maximale Sperrschichttemperatur aus. Die deutlich erhöhten Herstellungskosten limitieren den Einsatz von SiC-Leistungshalbleitern auf Anwendungen, in denen die Vorteile dieser Bauelemente die höheren Kosten überkompensieren und Systemvorteile ermöglichen. Heute werden SiC-Leistungshalbleiter z.B. in Solarwechselrichtern oder in Elektrofahrzeugen verwendet. Für Stromrichter industrieller elektrischer Antriebe ist die Kosten-Nutzen-Bilanz des Einsatzes von SiC-Leistungshalbleitern gegenwärtig nicht bekannt. Diese Fragestellung motiviert diese Arbeit. Die Auslegung sowie die daraus resultierenden Vor- und Nachteile eines Stromrichters mit SiC-Leistungshalbleitern für elektrische Industrieantriebe ist der Untersuchungsgegenstand dieser Arbeit. Zu diesem Zweck wurde unter Einhaltung industrieller Auslegungskriterien ein 240 kVA SiC-basierter Stromrichterdemonstrator als aktiver Gleichrichter am dreiphasigen 690 V Niederspannungsnetz untersucht. Auf der Basis einer Stromrichterauslegung für SiC- und Si-Leistungshalbleiter wurde ein theoretischer Vergleich von Kosten, Effizienz, Größe und Gewicht durchgeführt. Die Arbeit stellt zunächst den Stand der Technik für SiC-Leistungshalbleiter dar. Anschließend wird ein geeignetes SiC-MOSFET Module für den industriellen Stromrichter ausgewählt und bezüglich des Schaltverhaltens sowie der Parallelschaltung charakterisiert. Der Auslegung des Stromrichterleistungsteils liegen industrielle Anforderungen zu Grunde. Ein realisierter Demonstrator für einen netzseitigen Stromrichter (Active Front End) ist durch eine symmetrische Parallelschaltung von zwei SiC-Modulen, geeignete Ansteuerschaltungen (Gate Drive Units), eine niedrige Streuinduktivität im Kommutierungskreis sowie ein LCL-Filter mit Standard-Kernmaterialien gekennzeichnet. Der Stromrichtervergleich zeigt, dass der betrachtete Stromrichter mit SiC-Leistungshalbleitern im gesamten Betriebsbereich geringere Verluste verursacht als ein vergleichbarer Stromrichter mit Si-Leistungshalbleitern. Der SiC - basierte Stromichter ermöglicht auch eine deutliche Gewichtsreduktion bei ca. 89% der Systemkosten. Somit stellen SiC-Leistungshalbleiter eine attraktive technische Lösung für die untersuchte Anwendung eines aktiven Gleichrichters für industrielle elektrische Antriebe dar. / Wide bandgap (WBG) power semiconductors have drawn steadily increasing interest in power electronics in the last three decades. These devices have shown the potential of replacing silicon as the default semiconductor solution for several applications in determined power and frequency ranges. Among them the most mature WBG semiconductor material is silicon carbide (SiC), which presents several characteristics at the crystal level that translate in the potential of presenting lower resistivity, be able to switch faster with lower switching loss, and present both higher characteristics to tolerate and dissipate heat when com pared with silicon. However, the same characteristics that make it great also present a different set of drawbacks to be considered, which aligned with its increased cost make it challenging to assess if its advantages are justified for a particular application. Applications that highly value efficiency and/or power density are the most benefited, and converter solutions featuring the technology have already breached into these application markets. However in other applica tions, the line from which silicon carbide starts making sense in the cost/benefits/drawbacks balance is not clear. This is typically the case of industrial applications, which were the main focus and motivation of this work. Hence, in this work the main goal has been to determine the basic characteristics, advantages and limitations that SiC technology designs for industrial low voltage high power grid connected converters present. To that end, a 690 V, 240 kVA SiC-based grid-tied converter demonstrator following industrial design criteria has been developed. Then, based on this design procedure a theoretical comparison between a 690 V, 190 kVA SiC-based converter against a silicon-based converter designed for the same power output has been performed to compare them regarding cost, efficiency, size and weight. This work also comprises a thorough revision of the state of art of SiC devices, which led to the selection of the switching device. Additionally, a characterization of both single and parallel-connected operation of the semiconductor modules was performed, to determine the module characteristics and its suitability to build the SiC converter demonstrator. Results show that the converter demonstrator operates as designed, proving that is possible with the corresponding precautions to achieve: a low inductive power loop, balanced parallel connection of SiC modules, adequate driving circuits for the parallel-connected modules and an adequate filtering solution in compliance with grid-codes based on standard core materials for the selected switching frequency. Finally, the theoretical comparison between the two designed power converters shows that, attained to the conditions of the comparison, the SiC converter solution presents efficiency gains over the whole operating range, while presenting substantial weight savings at 89% of the costs of the Si-IGBT design, presenting itself as the cost-effective solution for the presented application requirements under the given design constraints.

The demand for high-power converters are surging due to applications like renewable energy, motor drives and grid-interface applications. Typically, these converters’ power ranges from tens of kilowatts (kW) to several megawatts (MW). To reach such high power levels the converter voltage ratings must increase, as the current ratings cannot be reached by the available devices or because the system losses become excessive. To address this, two strategies can be utilized: multilevel topologies (e.g. Multilevel Modular Converter or Flying Capacitor Multilevel Converter) and high voltage switches. For medium voltage applications, the most commonly employed switches are the IGBT and the IGCT. Both are silicon-based technology and are limited to a rated voltage of 6.5 kV and 4.5 kV, respectively. Often, these devices switching frequency are limited to less than 1 kHz. To expand the frontiers of medium voltage converters and to demonstrate the capabilities of wide band gap devices in medium voltage, a 7-level 13.8 kV AC 22 kV DC 1.1 MW flying capacitor multilevel converter based on 10 kV SiC MOSFET with 2.5 kHz switching frequency was designed and constructed. Given the complexity of a multilevel topology, the high voltage levels, and the critical nature of the loads, a failure in a high-power converter can incur significant costs, long service downtime, and safety risks to personnel. Hence, understanding the failure modes of these converters is essential for designing protections and mitigation strategies to prevent or reduce the risks of failures. Furthermore, the adoption of 10 kV SiC MOSFET introduces additional challenges in terms of protection. Despite their well-known benefits, these devices exhibit shorter energy withstanding time compared with their silicon counterpart, and increased insulation stress resulting from the high dv/dt imposed by the fast-switching transient at higher voltages. In this context, a failure mode analysis was conducted for the converter aforementioned. The analysis examined the fault dynamics and evaluated the protections schemes at the converter level. The study identified a failure mechanism between cells, so called Cell Short- Circuit Fault (CSCF), capable of damaging the entire phase-leg. In response, a protection scheme based on TVS (Transient Voltage Suppression) diodes was designed to prevent extremely imbalanced cell voltages and failure propagation. Because of the high electric field intensity environment of the converter, an FEA (Finite Element Analyses) simulation is performed to verify and control the electric field (E-field) intensity within the protection module itself and in the converter assembly. Next, the protection module insulation design was successfully verified in a Partial Discharge (PD) experiment. In sequence, an experimental verification utilizing an equivalent circuit based on the fault model demonstrated the efficacy of the protection module. Waveforms extracted while the converter was operating showing the protection module acting during a fault are presented and analyzed. Finally, the influence of the protection module in the switching of the 10 kV SiC MOSFET was evaluated via a double pulse test (DPT), revealing negligible effects on the converter performance. / Center of Power Electronics Systems (CPES) Department of Energy (DoE) / Master of Science / Due to governmental policies and market opportunities renewable energy (e.g. solar and wind energy) is increase its share in the electricity generation in the US and around the world. This scenario poses challenges regarding the stability of the grid and variation in the generation along the day. One of the alternatives to alleviate the problem is to use highpower converters that provides a interface between grid and manufacturing plants. This type of converter have bidirectional capabilities and can store the energy generated by solar farms during the day and return it to the grid at night for example. Moreover, it can provide grid support capabilities in terms of variation of frequency and voltage. To expand on the grid interface converters application concept, a medium voltage power converter in 22 kV DC and 13.8 kV AC is designed utilizing novel techniques and the latest technologies in semiconductors, 10 kV SiC MOSFETs. The benefits of this design are a small form factor, high efficiency, immunity to electromagnetic interference and power quality. This work presents a failure mode analysis of the power converter aforementioned, the analysis examined the fault dynamics and an evaluation of the protections schemes at the converter level. The failure analysis revealed the need of a protection scheme extremely imbalanced cell voltages and failure propagation. Hence, a protection module based on TVS (Transient Voltage Suppression) diodes was successfully designed and tested. Due to the high voltages present in this equipment, an FEA (Finite Element Analyses) simulation is performed to verify and control the electric field (E-field) intensity within the protection module itself and in the converter assembly. Experimental results are provided for insulation design integrity (partial discharge test), for the efficacy of the protection module against the fault, and for the impact of the protection module on the operation performance.

<p>Advances in modern technology and recent demand for high power applications have motivated great interest in power electronics. Power semiconductor devices are key components that have enabled significant advances in power electronic systems. Historically, silicon has been the material of choice for power semiconductor devices such as diodes, transistors and thyristors. However, silicon devices are now reaching their fundamental limits, and a transition to wide bandgap semiconductors is critical to make further progress in the field. Among them, SiC (silicon carbide) has attracted increasing attention as a power semiconductor to replace silicon due to its superior properties and technological maturity. In fact, SiC power MOSFETs have been commercially available since 2011, and are actively replacing their silicon counterparts at blocking voltages above 1 kV. At these voltages, the specific on-resistance of SiC MOSFETs is 200-300x lower than that of silicon devices. However, conventional vertical SiC MOSFETs are still far from their theoretical performance at blocking voltages below 2 kV. In this regime, the channel resistance is the dominant limitation due to the relatively low channel mobility at the SiO2/4H-SiC MOS interface.<br></p><p> </p><p>In this thesis, the first successful demonstration of a novel power device in 4H-SiC called the trigate power DMOSFET (double diffused metal oxide semiconductor field effect transistor) is presented. This device reduces the channel resistance by a factor of 3-5× compared with the state-of-art commercial power DMOSFETs, without requiring an increase in the channel mobility. The trigate structure is applied to a power MOSFET for the first time along with a self-aligned short channel process. This new structure utilizes both the conventional horizontal surface as well as the sidewalls of a trench to increase the effective width of the channel without increasing the device area. Conceptual design, optimization, process development and electrical results are presented. The trigate power MOSFET with a trench depth of 1 μm designed for a blocking voltage of 650 V has a specific on-resistance of 1.98 mΩcm²and a channel resistance of 0.67 mΩcm².This corresponds to a ∼2× reduction in the total specific on-resistance, and a 3.3× reduction in the specific channel resistance as compared to a conventional DMOSFET with the same blocking voltage rating. This demonstration is a landmark that could help SiC technology compete successfully in the lower blocking voltage regime below 600 V, and access for the first time a completely new segment in the power electronics application space.</p>

Actuellement, la majorité des convertisseurs embarqués dans des trains circulant sous une caténaire alternative est composée d’un transformateur basse fréquence, puis de redresseurs,alimentant des moteurs de traction via des onduleurs de traction. Les inconvénients majeurs de ces structures sont un volume et une masse embarqués importants, dus au transformateur fonctionnant en basse fréquence. Le rendement est également mauvais, à cause des contraintes de volume et de masse. Grâce aux développements des semiconducteurs haute tension et forte puissance et des transformateurs moyenne fréquence, i.e. de l’ordre de quelques kilohertz, de nouvelles topologies de convertisseurs embarqués, appelées transformateurs électroniques, sont à l’étude. Si plusieurs topologies ont déjà été étudiées dans la littérature, elles n’ont jamais été comparées. L’objectif principal de cette thèse est donc de proposer une méthodologie de dimensionnement des différentes topologies de transformateurs électroniques, afin de pouvoir les comparer. Un état de l’art des différentes structures proposées dans la littérature est présenté dans le premier chapitre de ce mémoire. Le chapitre 2 est consacré à la comparaison de structures indirectes. Pour cela, une méthodologie, permettant d’optimiser le dimensionnement de chaque structure afin de maximiser son rendement sous des contraintes de masse et de volume, a été développée. Elle est ensuite appliquée sur des topologies utilisant des MOSFET SiC, contrairement aux structures à IGBT Si développées dans la littérature. L’inductance magnétisante est considérée afin d’assurer un fonctionnement en commutation douce, et ainsi limiter les pertes. Un troisième chapitre propose un filtre actif innovant, intégré aux DC-DC du convertisseur. Celui-ci a pour but de réduire le volume du condensateur de filtrage des bus intermédiaires, et ainsi le volume total du convertisseur, sans dégrader la fiabilité intrinsèque de celui-ci. Son fonctionnement et son impact sur les pertes du DC-DC y sont étudiés. Enfin, le dernier chapitre est dédié à l’étude des interactions entre le convertisseur embarqué et l’infrastructure ferroviaire. Pour cela, des modèles d’infrastructure 25 kV-50 Hz ont été réalisés. Ceux ci comportent notamment un circuit original modélisant l’effet de peau dans la caténaire. Des résonances à certaines fréquences, caractéristiques de la géométrie du réseau et de la position du train sur celui-ci, ont été mises en évidence dans l’impédance vue par le train. Ces modèles ont aussi été implémentés dans un simulateur numérique, pour alimenter une maquette petite échelle de convertisseur. Ce type de test n’a, a priori, jamais été réalisé sur un transformateur électronique. Une conclusion générale et des perspectives sur les travaux présentés concluent ce mémoire / Current on-board converters, running on AC catenaries, are mainly composed by a low frequency transformer, then rectifiers, supplying traction motors through three-phase inverters. Due to volume and mass constraints on the converter, the efficiency of the transformer is limited. Moreover, this transformer is quite bulky and heavy. Thanks to the development of high voltage and high power semiconductors, such as Si IGBTs or SiC MOSFETs, and of medium frequency transformer, i.e. operating at a few kilohertz, new topologies of on-board converters, named Power Electronic Traction Transformer (PETT), are studied. Though several structures have been studied in the literature, they have never been compared. The main objective of this thesis is, thus, to develop a methodology to size PETT topologies, in order to compare them. In the first chapter, a state of the art of the PETT structures proposed in literature is presented. The second chapter is dedicated to the comparison of indirect topologies. A methodology, optimising the sizing of each structure to maximise its efficiency under mass and volume constraints, is developed. It is applied on topologies using SiC MOSFETs, contrary to Si IGBT structures developed in the literature. The magnetizing inductance is also considered to insure soft switching and reduce the losses. In the third chapter, an novel active filter, included in the DC-DCs of the converter, is proposed. The aim is to reduce the volume of the filtering capacitors on the intermediate buses, and thus, of the entire converter, without impacting the intrinsic reliability of the converter. Its impact on the losses of the DC-DC is studied. The last chapter deals with the interactions between the on-board converter and the infrastructure. Thus, the 25 kV-50 Hz railway network is modeled. It includes a novel circuit, modelling the skin effect in the catenary. Some resonances, dependant on the sector geometry and the train position, are highlighted in the impedance seen by a train. Moreover, the models are implemented in a numerical simulator to supply a small scale mock-up of a PETT. PHIL tests have, a priori, never been carried on a PETT. A conclusion and some perspectives of future work close thisdissertation.

No description available.

This paper describes the design, fabrication, and testing of a 1.2 kV, 6.5 mΩ, half-bridge, SiC MOSFET power module to evaluate the impact of parametric device tolerances on electrical and thermal performance. Paralleling power devices increases current handling capability for the same bus voltage. However, inherent parametric differences among dies leads to unbalanced current sharing causing overstress and overheating. In this design, a symmetrical DBC layout is utilized to balance parasitic inductances in the current pathways of paralleled dies to isolate the impact of parametric tolerances. In addition, the paper investigates the benefits of flexible PCB in place of wire bonds for the gate loop interconnection to reduce and minimize the gate loop inductance. The balanced modules have dies with similar threshold voltages while the unbalanced modules have dies with unbalanced threshold voltages to force unbalanced current sharing. The modules were placed into a clamped inductive DPT and a continuous, boost converter. Rogowski coils looped under the wire bonds of the bottom switch dies to observe current behavior. Four modules performed continuously for least 10 minutes at 200 V, 37.6 A input, at 30 kHz with 50% duty cycle. The modules could not perform for multiple minutes at 250 V with 47.7 A (23 A/die). The energy loss differential for a ~17% difference in threshold voltage ranged from 4.52% (~10 µJ) to -30.9% (~30 µJ). The energy loss differential for a ~0.5% difference in V_th ranged from -2.26% (~8 µJ) to 5.66% (~10 µJ). The loss differential was dependent on whether current unbalance due to on-state resistance compensated current unbalance due to threshold voltage. While device parametric tolerances are inherent, if the higher threshold voltage devices can be paired with devices that have higher on-state resistance, the overall loss differential may perform similarly to well-matched dies. Lastly, the most consistently performing unbalanced module with 17.7% difference in V_th had 119.9 µJ more energy loss and was 22.2°C hotter during continuous testing than the most consistently performing balanced module with 0.6% difference inV_th. / Master of Science / This paper describes the design, construction, and testing of advanced power devices for use in electric vehicles. Power devices are necessary to supply electricity to different parts of the vehicle; for example, energy is stored in a battery as direct current (DC) power, but the motor requires alternating current (AC) power. Therefore, power electronics can alter the energy to be delivered as DC or AC. In order to carry more power, multiple devices can be used together just as 10 people can carry more weight than 1 person. However, because the devices are not perfect, there can be slight differences in the performance of one device to another. One device may have to carry more current than another device which could cause failure earlier than intended. In this research project, multiple power devices were placed into a package, or "module." In a control module, the devices were selected with similar properties to one another. In an experimental module, the devices were selected with properties very different from one another. It was determined that the when the devices were 17.7% difference, there was 119.9 µJ more energy loss and it was 22.2°C hotter than when the difference was only 0.6%. However, the severity of the difference was dependent on how multiple device characteristics interacted with one another. It may be possible to compensate some of the impact of device differences in one characteristic with opposing differences in another device characteristic.

The falling cost of batteries, along with an increasing need to cut emissions, has spurred significant interest in the electrification of vehicles. In addition, as semiconductor devices have evolved, the research for electric vehicles with higher battery voltage has increased. The traction inverter is an important part of the electric power train and can account for a substantial portion of the drive train’s losses. This thesis therefore models, simulates, and studies the losses for a convectional Two-Level (2L) inverter and a Three-Level T-Type (3LT) inverter utilizing Silicon Carbide (SiC) MOSFETs and compares the two inverter topologies in terms of efficiency. The rated power of the inverters is 120 kW at a DC voltage of 800 V. The theoretical basis of SiC MOSFET and its reverse conduction, operation of 2L and 3LT inverter topologies, and Space Vector Pulse Width Modulation (SVPWM) technique are introduced in the initial part of the thesis. To estimate switching and conduction losses, Simulink is used to model and simulate an electric drive system. These estimated losses are then utilized to develop efficiency maps for both topologies over the complete speed-torque range. Based on the efficiency comparison, the 3LT topology outperforms the 2L topology for any requested torque in the medium to the high-speed range, which is typical of highway driving. In the low-speed, high-torque region, which is typical of city driving, the 2L topology is superior. The efficiency of each topology is affected by switching frequency, device junction temperature, and DC-link voltage. However, the comparison reveals that the maximum average difference in efficiency is 0.35%, with the 3LT topology being superior. Finally, the efficiency differences between the two inverter topologies are minimal. As a result, it may be concluded that the two topologies perform similarly. Thus, it can be inferred that comparing the efficiency of the two topologies should not be the sole criterion for selecting which topology should be used for the electric drive. / Den sjunkande kostnaden för batterier, tillsammans med ett ökande behov av att minska utsläppen, har lett till ett stort intresse för elektrifiering av fordon. Dessutom, har utvecklingen av halvledare lett till en ökning inom forskningen av elfordon med högre batterispänning. Traktionsomriktaren är en viktig del av den elektriska drivlinan och kan stå för en stor del av de totala förlusterna i drivlinan. I denna rapport modelleras, simuleras och studeras därför förlusterna i en konventionell omriktare med två nivåer (2L) och en T-typ omriktare med tre nivåer (3LT). Båda topologierna använder kiselkarbid (SiC) MOSFETs i jämförelsen av resultaten med avseende på verkningsgrad. Inverterarnas nominella effekt är 120 kW vid en likspänning på 800 V. Den teoretiska grunden för SiC MOSFET och hur de fungerar, hur 2L- och 3LT-inverterstopologierna fungerar samt tekniken för Space Vector Pulse Width Modulation (SVPWM) presenteras i rapporten. För att uppskatta switch- och ledningsförluster används Simulink för att modellera och simulera det elektriska drivsystemet. De uppskattade förlusterna används sedan för att utveckla verkningsgradskartor för de båda topologierna över hela det operativa området. Baserat på verkningsgradsjämförelsen mellan topologierna så presterar 3LT-topologin bättre än 2L-topologin i driftspunkter i medelhöga till höga hastigheter, vilket är typiskt för motorvägskörning. Vid låga hastigheter med högt vridmoment, vilket är typiskt för stadskörning, är 2L-topologin bättre. Verkningsgraden för de båda topologierna påverkas av switchfrekvensen, halvledarens temperatur samt DC-länkspänning. Jämförelsen visar dock att den största genomsnittliga skillnaden i verkningsgrad mellan de två topologierna är 0,35%, där 3LT-topologin är bättre. Sammanfattningsvis så är skillnaderna i verkningsgrad mellan de två topologierna minimala, vilket innebär att de båda topologierna har liknande prestanda med avseende på verkningsgrad. Man bör därför inte bara ha verkningsgrad som det enda kriteriet vid val av topologi för elektriska drivlinor.

The swift shift of the automotive industry towards electrification is primarily propelled by technological advancements in battery technology. To stay competitive and meet the new demands of the industry, there is a crucial need for novel ideas and innovation. Higher energy density and lower cost makes Battery Electric Vehicles (BEV) competitive and affordable for a wider range of customers. Component space requirements inside a BEV as well as the growing trend towards increasing the voltage of the system from 400 V to 800 V poses new challenges that has to be overcome. Mechanical contactors have the advantage of being simple and easy to use, with low conductive losses. However, they have some drawbacks, such as poor performance when switching under load, limitedability to interrupt fault currents and large controlpower usage. To address these issues, a bidirectional MOSFET configuration can be used to replace the current system. This configuration provides enhanced abilities to quickly suppress fault current, improve robustness, eliminate mechanical failure points, and perform pre-charge sequences without the need for a dedicated branch. Additionally, this configuration maintains current performance in a smaller volume. Within the Battery distribution unit (BDU), this configuration replaces several components, such as thermal fuses, HV contactors, pre-charge relays,pre-charge resistors, and breaker/pyro-fuses with high voltage solid-state components. This study aims to propose potential mitigation methods through a combination of literature survey and comprehensive analysis using Simscape/-MATLAB Simulink models of a fully operational BDU utilizing readily available market components for a 1.2 kV system. The developed model illustrates the thermaland electrical performance of solid-state components in diverse testing scenarios, while maintaining their expected lifecycle. Additionally, sensitivity analysis is conducted using the proposed model to identify themost crucial design parameters within the system. The resulting system performs satisfactory during normal operations, albeit with ten times higher conductive losses attributed to the elevated junction resistance when compared to contactors.Consequently, additional cooling measures are required during harsh operations and DC fast charge. However, the required magnitization energy for a contactor does over time equate or even surpass the MOSFETs conductive losses. The design has established the feasibility of leveraging the primary switchfor pre-charge sequence execution, thus eliminating the need for a dedicated pre-charge branch. The system exhibits strong potential for interrupting both resistive and direct shorts at various locations in the model. However, the low system inductance and the need to avoid introducing any additional inductance into the system renders fault scenarios heavily dependent on said parameter. In conclusion, the proposed model exhibits considerable potential to eliminate numerous auxiliary components therefore reducing losses and offer a more adaptable and consolidated solution. Resulting in a smaller physical footprint and more favorable positioning within the BDU. Moreover, the financial analysis of the system highlights promising prospects for its integration into the drivetrain with the growingmarket trends.

The intentions of the so-called "More Electrical Aircraft" (MEA) are higher efficiency and lower weight. A main topic here is the application of electrical instead of hydraulical, pneumatical and mechanical systems. The necessary power electronic devices have intermediate DC-links, which are typically supplied by a three-phase system with active B6 and passive B12 rectifiers. A possible alternative is the B6 diode bridge in combination with an active power filter (APF). Due to the parallel arrangement, the APF offers a higher power density and is able to compensate for harmonics from several devices. The use of the diode bridge rectifier alone is not permitted due to the highly distorted phase current. The following investigations are dealing with the development of an active power filter for a three-phase supply with variable frequency from 360 to 800 Hz. All relevant components such as inductors, EMC-filters, power modules and DC-link capacitor are designed. A particular focus is put on the customized power module with SiC-MOSFETs and SiC-diodes, which is characterized electrically and thermally. The maximum supply frequency slope has a value of 50 Hz/ms, which requires a high dynamic and robustness on the control algorithm. Furthermore, the content of 5th and 7th harmonics must be reduced to less than 2 %, which demands a high accuracy. To cope with both requirements, a two-stage filter algorithm is developed and implemented in two independent signal processors. Simulations and laboratory experiments confirm the performance and robustness of the control algorithm. This work comprehensively presents the design of aerospace rectifiers. The results were published in conferences and patents. / Hauptziele des sogenannten "More Electrical Aircraft" (MEA) sind Effizienzerhöhung und Gewichtseinsparung. Ein Schwerpunkt hierbei ist die Nutzung von elektrischen statt hydraulischen, pneumatischen und mechanischen Systemen. Die notwendigen Leistungselektroniken haben DC-Zwischenkreise, welche mittels aktiven B6 und passiven B12 Gleichrichtern aus dem Dreiphasennetz gespeist werden. Eine mögliche Alternative ist die B6 Diodenbrücke in Kombination mit einem aktiven Netzfilter, welcher aufgrund der parallelen Anordnung eine höhere Leistungsdichte aufweist und darüber hinaus mehrere Geräte gleichzeitig entstören kann. Die alleinige Nutzung einer Diodenbrücke ist aufgrund des hohen Anteils von Stromharmonischen nicht zulässig. Diese Arbeit beschäftigt sich mit der Entwicklung eines aktiven Filters für ein Dreiphasensystem mit variabler Frequenz von 360 bis 800 Hz. Es werden alle relevanten Bauteile wie Induktivitäten, EMV-Filter, Leistungsmodule und Zwischenkreiskondensator ausgelegt. Besonderes Augenmerk liegt auf dem kundenspezifischen Modul mit SiC-Dioden und SiCMOSFETs, welches vollständig elektrisch und thermisch charakterisiert wird. Die Änderung der Netzfrequenz beträgt bis zu 50 Hz/ms, was eine hohe Dynamik und Robustheit von der Filterregelung verlangt. Weiterhin ist im statischen Fall eine hohe Genauigkeit gefordert, da die 5. und 7. Harmonische auf unter 2% geregelt werden müssen. Um beiden Anforderungen gerecht zu werden, wird ein zweistufiger Regelungsalgorithmus entwickelt der auf zwei digitalen Signalprozessoren implementiert wird. Simulationen und Labormessungen bestätigen die Robustheit des Regelungskonzeptes. Diese Arbeit stellt umfassend die Entwicklung von Luftfahrtgleichrichtern dar. Die Ergebnisse wurden in Konferenzen und Patenten veröffentlicht.

Les MOSFET en SiC sont appelées à remplacer les IGBT en Silicium pour des applications de demandant une plus forte vitesse de commutation. Cependant, les MOSFET en SiC ont encore quelques problèmes de fiabilité, tels que la robustesse de la diode interne ou bien la robustesse de l'oxyde de grille. Cette dernière est liée à l’oxyde de grille des composants du type MOSFET. Des instabilités de la tension de seuil sont aussi signalées. Cette thèse aborde ces deux sujets sur des MOSFET commerciaux 1200 V. L'étude de la diode interne met en évidence que les caractéristiques I-V (de la diode intrinsèque) demeurent stables après l'application d'un stress. Cependant, une dérive surprenante de la tension de seuil apparaît. Des tests complémentaires, en stressant le canal à la place de la diode, avec les mêmes contraintes n'ont pas montré de dérive significative de la tension de seuil. Donc, l'application d'un stress en courant quand le composant est en mode d'accumulation semble favoriser l'apparition des instabilités de la tension de seuil. La robustesse de l'oxyde de grille concerne les instabilités de la tension de seuil, mais aussi l'estimation de la durée de vie à des conditions d'opération nominales. Les résultats obtenus montrent que la durée de vie de l'oxyde de grille n'est plus un problème. Pourtant, le suivi du courant de grille pendant les tests ainsi que les caractérisations de la capacité de grille mettent en évidence des translations de la courbe C(V) à cause des phénomènes d’injection des porteurs et de piégeage, mais aussi la possible présence d’ions mobiles. Aussi, une bonne analyse des dégradations et dérives liées à l’oxyde de grille doit être réalisée. / SiC power MOSFETs are called to replace Si IGBT for some medium and high power applications (hundreds of kVA). However, even if crystallographic defects have been drastically reduced, SiC MOSFETs are always concerned by some robustness issues such as the internal diode robustness or the robustness of the gate oxide. The last one especially affects MOSFETs devices and is linked to the apparition of instabilities in the threshold voltage. This thesis focuses on these two issues. The study of the internal diode robustness highlighted that the I-V curve (of the intrinsic diode) remains stable after the application of a current stress in static mode, but also with the DUT placed in a converter with inductive switchings. These are the most stressful conditions. However, a surprising drift in the threshold voltage has been observed when some devices operates under these conditions; in static mode or in a converter. Complementary tests stressing the channel instead of the internal diode in the same temperature and dissipated power, have not resulted in a drift of the threshold voltage. Thus, the application of a current stress when the device is in accumulation regime could favour the apparition of instabilities in the threshold voltage. The study of the gate oxide focus in the instabilities of the threshold voltage, but also on the expected lifetime of the oxide at nominal conditions. Results obtained shown that the expected lifetime (TDDB) of the oxide is no longer a problem. Indeed, tests realized in static mode, but also in a converter under inductive switching conditions resulted in expected lifetimes well above 100 years. However, the monitoring of the gate current during the test and gate capacitance characterizations C(V) highlighted a shift in the capacitance due to carrier injection and trapping phenomena and probably to the presence of mobile-ions. Still regarding the instabilities of the threshold voltage, classic tests resulted in no significant variations of the threshold voltage at 150 _C. However, at 200 _C the drift observed for some manufacturers is higher than +30%. This is unacceptable for high-temperature applications and evidence that the quality of the gate oxide and the SiC=SiO2 interface must continue to be improved, together with the manufacturing methods to minimize the presence of mobile ions in the substrate.