This work presents a 6.5-kV 1-kA SiC bipolar diode module for megawatt-range medium voltage converters. The study comprises a review of SiC devices and bipolar diodes, a description of the die and module technology, device characterization and modelling and benchmark of the device at converter level. The effects of current change rate, temperature variation, and different insulated-gate bipolar transistor (IGBT) modules for the switching cell, as well as parasitic oscillations are discussed. A comparison of the results with a commercial Si diode (6.5 kV and 1.2 kA) is included. The benchmark consists of an estimation of maximum converter output power, maximum switching frequency, losses and efficiency in a three level (3L) neutral point clamped (NPC) voltage-source converter (VSC) operating with SiC and Si diodes. The use of a model predictive control (MPC) algorithm to achieve higher efficiency levels is also discussed. The analysed diode module exhibits a very good performance regarding switching loss reduction, which allows an increase of at least 10 % in the output power of a 6-MVA converter. Alternatively, the switching frequency can be increased by 41 %.

Le graphène est un cristal bidimensionnel composé d'atomes de carbone arrangés sur un réseau en nids d'abeille. Ce matériau présente des propriétés électroniques intéressantes tant au niveau fondamental qu'en vue d'applications avec notamment une structure de bande exotique en « cône de Dirac » et de grandes mobilités de porteurs. Sa fabrication par graphitisation du SiC est particulièrement adaptée aux applications électroniques. Nous avons étudié ce système par microscopie à effet tunnel (STM) et simulations numériques ab initio avec comme objectif la caractérisation au niveau atomique de l'interface graphène - SiC(000-1) (face carbone) et l'étude de l'impact du substrat sur la structure électronique du graphène. Après un chapitre introductif à la thématique du graphène, suivi d'un chapitre présentant les deux techniques utilisées au cours de ce travail, nous présentons nos échantillons faiblement graphitisés obtenus sous ultra-vide. Nous avons identifié deux types d'interfaces, les reconstructions natives de la surface du SiC(000-1) appelées (2x2)C et (3x3), sur lesquelles reposent les ilots monoplan de graphène, avec un fort désordre rotationnel donnant lieu à des figures de moiré sur les images STM. Nous montrons par imagerie STM et spectroscopie tunnel que l'interaction graphène/(3x3) est très faible. Nous étudions ensuite le cas d'interaction plus forte graphène/(2x2) successivement du point de vue des états du graphène et des états de la reconstruction, dans l'espace direct et réciproque, de façon expérimentale et théorique. Enfin, nous considérons l'effet de défauts observés par STM à l'interface des ilots sur (2x2), modélisés par des adatomes d'hydrogène, sur le dopage et la structure de bande électronique du graphène. / Graphene refers to a two-dimensional crystal made of carbon atoms arranged on a honeycomb lattice. This material presents interesting electronic properties regarding fundamental physics as well as industrial applications, such as an exotic low-energy band structure and high charge carrier mobility. Its fabrication through the graphitization of SiC is a promising method for electronics. We studied this system using scanning tunnelling microscopy (STM) and ab initio numerical simulations with the aim of characterizing the graphene - SiC(000-1) (carbon face) interface and studying the impact of the substrate on graphene's electronic structure. After an introduction to the graphene topic and a description of our investigation techniques, we present our lightly graphitized samples obtained under ultra-high vacuum. We identify two interface structures, the native SiC(000-1) surface reconstructions named (2x2)C and (3x3), on top of which lie graphene monolayer islands with a high rotational disorder leading to various moiré patterns on STM images. Using STM, we show that the graphene/(3x3) interaction is very weak. We then study the stronger graphene/(2x2) interaction successively from the point of view of the graphene and the reconstruction states, in the direct and reciprocal space, using both our experimental and theoretical methods. Finally, we consider the impact of interfacial defects observed by STM through graphene/(2x2) islands and modelled with hydrogen adatoms on the electronic band structure and doping of graphene

Actuellement, le développement de semiconducteurs et la demande croissante de convertisseurs en électronique de puissance dans les différents domaines de l’énergie électrique, notamment pour des applications dans l’aéronautique et les réseaux de transport et de distribution, imposent de nouvelles spécifications comme le fonctionnement à hautes fréquences de commutation, densités de puissance élevées, hautes températures et hauts rendements. Tout ceci contribue au fort développement des composants en SiC (Carbure de Silicium). Cependant, ces composants créent de nouvelles contraintes en Compatibilité Electromagnétique (CEM) à cause des conditions de haute fréquence de commutation et fortes vitesses de commutation (forts di/dt et dv/dt) en comparaison à d’autres composants conventionnels de l'électronique de puissance. Une étude des perturbations générées par les composants SiC est donc nécessaire. L'objectif de ce travail est de donner aux ingénieurs amenés à concevoir des convertisseurs une méthode capable de prédire les niveaux d'émissions conduites générées par un convertisseur électronique de puissance qui intègre des composants en SiC. La nouveauté du travail présenté dans cette thèse est l’intégration de différents modèles de type circuit pour tous les constituants d’un convertisseur (un hacheur série est pris comme exemple). Le modèle est valable pour une gamme de fréquences de 40Hz à 30MHz. Des approches de modélisation des parties passives du convertisseur sont présentées. Ces approches sont différentes selon que les composants modélisés soient disponibles ou à concevoir : elles sont basées sur des mesures pour la charge et les capacités ; elles sont basées sur des simulations prédictives pour routage du convertisseur. Le modèle complet du convertisseur (éléments passifs et actifs) est utilisé en simulation pour prédire les émissions conduites reçues dans le réseau stabilisateur d’impédance de ligne. Le modèle est capable de prédire l'impact de différents paramètres comme le routage, les paramètres de contrôle comme les différents rapports cycliques et les résistances de grille avec des résultats satisfaisants dans les domaines temporels et fréquentiels. Les résultats obtenus montrent que le modèle peut prédire les perturbations en mode conduit pour les différents cas jusqu'à une fréquence de 15MHz. Finalement, une étude paramétrique du convertisseur a été élaborée. Cette étude a permis de voir l’influence de la qualité des différents modèles comme les éléments parasites du routage, des composants passifs et actifs et d'identifier les éléments qui ont besoin d’un modèle précis pour avoir des résultats valides dans la prédiction des perturbations conduites. / The recent technological progress of semiconductors and increasing demand for power electronic converters in the different domains of electric energy particularly for applications in aeronautics and networks of transport and distribution impose new specifications such as high frequencies, high voltages, high temperatures and high current densities. All of this contributes in the strong development of SiC (Silicon Carbide) components. However these components create new issues in Electromagnetic Compatibility (EMC) because of the conditions of high frequency switching and high commutation speeds (high di/dt and dv/dt) compared to other conventional components in power electronics. A precise study of the emissions generated by SiC components is therefore necessary. The aim of this work is to give a method able to predict levels of conducted emissions generated by a power electronics converter with SiC components to engineers which design power converters. The novelty of the work presented in this thesis is the integration of different modeling approaches to form a circuit model of a SiC-based converter (a buck dc–dc converter is considered as an example). The modeling approach is validated in the frequency range from 40Hz to 30MHz. Modeling approaches of the passive parts of the converter are presented. Theses approaches differs according to whether the component is existing or to be designed : they are based on measurements for the load and capacitors; they are based on numerical computation and analytical formulations for PCB. The complete model obtained (passive and active components) is used in simulations to predict the conducted emissions received by the line impedance stabilization network. The model is able to predict the impact of various parameters such as PCB routing, the control parameters like duty cycles and different gate resistors in the time and frequency domains. A good agreement is obtained in all cases up to a frequency of 15MHz. Finally, a parametric study of the converter has been elaborated. This study allowed to see the influence of different models such as parasitic elements of the PCB, passive and active components and to identify the elements that need a precise model to obtain valid results in the prediction of conducted EMI.

L’utilisation des convertisseurs de puissance dans les applications de transport électrique à base de pile à combustible ouvre les portes de recherche sur la problématique de leur fiabilité puisqu’un défaut dans ces circuits pourrait provoquer une panne ou un disfonctionnement se répercutant sur l’ensemble de la chaine de traction. Le convertisseur statique considéré est un hacheur élévateur à six bras parallèles et entrelacés à fréquence de découpage égale à 100kHz ayant un gain en tension élevé (égal à 5). Il comporte avec le choix des éléments passifs une ondulation de courant d’entrée faible et interface une pile à combustible de 21kW (70V, 300A) et une charge résistive de 350V (valeur proche des réseaux comportant des batteries Li-ion). Ces systèmes incorporent des interrupteurs de puissance semi-conducteurs qui sont les composants les plus fragiles et qui sont soumis à des contraintes électriques et thermiques sévères pour les applications automobiles. L’utilisation de la technologie en carbure de silicium pour ces cellules semi-conductrices élémentaires accompagne un réel besoin industriel des filières de développement des systèmes miniaturisés et intègre les préoccupations des constructeurs automobiles autour de la mise en œuvre opérationnelles des technologies innovantes embarquées et fiables. En effet, cette technologie des composants semi-conducteurs, dit «grand-gap», est à coup sûr un candidat sérieux pour optimiser l’efficacité énergétique et l’intégration de puissance des convertisseurs, pour pile à combustible, plus robustes vis-à-vis des contraintes de l’usage transport. Dans mes travaux de thèse, les défauts de type court-circuit et circuit-ouvert d’interrupteurs de puissance en carbure de silicium sont alors considérés pour satisfaire la continuité de service et annuler l’influence de cette dégradation d’une part sur la source électrochimique et d’autre part sur la charge. Les méthodes de détection proposées sont des méthodes simples et non intrusives. Elles utilisent la tension drain et source VDS de l’interrupteur de puissance comme indicateur de défaut pour juger de la présence d'un court-circuit ou un circuit-ouvert. Le principe de détection consiste à comparer la tension VDS à une tension seuil paramétrable (à fixer pour le composant en carbure de silicium). Une fois la phase inductive défectueuse est identifiée, un processus de de gestion des défauts par la commande est mis en œuvre. Dans le cas de court-circuit une stratégie de soulagement par la commande est appliquée pour adoucir la coupure de courant de la branche inductive en défaut. Puis suivra l’isolation de cette ligne via des interrupteurs spécifiques qui supportent une ouverture du circuit à fort courant (exemple: fusible ultra-rapide) et une reconfiguration par la commande du convertisseur de puissance (passage de 6 à 6-i phases, avec i nombre de défauts). Dans le cas de circuit-ouvert, qui un défaut qui isole automatiquement le bras défectueux, si aucune action préventive n’est planifiée la continuité de service est assurée mais à plus d’ondulations de courant sur les bras du convertisseur statique. Pour éviter cet effet, la reconfiguration par la commande est nécessaire. / The use of power converters in fuel cell electrical transport applications drives research to study the problem of their reliability, since a fault in these circuits could cause a breakdown or a malfunction that affects the entire system of the powertrain. The converter under consideration is a six-phase interleaved boost converter operating in unidirectional power flow in continuous conduction mode with a 100 kHz switching frequency and a high voltage gain (equal to 5). It allows, with the choice of passive elements, a low input current ripple and interfaces a 21kW fuel cell (70V, 300A) and a resistive load of 350V (value close to the networks with batteries Li-ion). These systems contain semiconductor power switches which are the most fragile components and are subject to severe electrical and thermal stresses for automotive applications. The use of silicon carbide technology for these semiconductor components accompanies a real industrial need for development of a miniaturized system and integrates the concerns of manufacturers of electric vehicles around the implementation of innovative, embedded and reliable technologies. Indeed, this technology of semiconductor components is certainly a serious candidate to optimize the energy efficiency and power integration of converters, for fuel cells, more robust against constraints of the transport use. In my thesis work, switch short-circuit and switch open-circuit faults of silicon carbide power switches are considered to satisfy the continuity of service and to cancel the influence of this degradation on both the fuel cell source and the charge. The proposed detection methods are simple and non-intrusive. They use the drain to source voltage VDS of the power switch as a fault indicator to judge the presence or not of a short-circuit or an open-circuit switch fault. The detection principle consists in comparing the VDS voltage with a configurable threshold voltage (to fix it for the silicon carbide component). Once the faulty inductive phase is identified, a fault management process by the control is implemented. In the case of switch short-circuit fault, firstly a control strategy is applied to soften the break of current of the faulty inductive phase. After faulty phase isolation using specific switches that support breaking of the high-current circuit (example: high-speed fuse) and a reconfiguration by the control of the power converter (transition from 6 to 6-i phases, with i number of faults). In the case of switch open-circuit fault, which automatically isolates the defective phase, if any preventive action is planned the continuity of service is ensured but to more current ripple on the arms of the DC/DC converter. To avoid this effect, reconfiguration by the command is necessary.

O carbeto de silício (SiC) é um semicondutor com propriedades adequadas para substituir o silício em dispositivos eletrônicos em aplicações que exijam alta potência, alta frequência e/ou alta temperatura. Além disso, é possível crescer termicamente um filme de dióxido de silício (SiO2) sobre o SiC de maneira análoga ao silício. Porém, esses filmes apresentam maior densidade de defeitos eletricamente ativos na região interfacial SiO2/SiC que no caso do SiO2/Si, o que limita a qualidade dos dispositivos formados. Assim, compreender a origem da degradação elétrica e desenvolver métodos para passivar os defeitos na região interfacial SiO2/SiC são importantes passos para o desenvolvimento da tecnologia do SiC. Buscando uma melhor compreensão da natureza dos defeitos presentes na região interfacial SiO2/SiC, a interação de estruturas SiO2/SiC com vapor d’água enriquecido isotopicamente (D2 18O) e a interação com monóxido de carbono (CO), um dos subprodutos da oxidação térmica do SiC, foram investigadas. Observou-se que a interação com CO gera cargas positivas na estrutura e que a incorporação de deutério proveniente da água é fortemente dependente da rota de formação do filme de SiO2. Sabendo que a incorporação de nitrogênio e de fósforo na região interfacial SiO2/SiC são eficientes métodos para reduzir o número de defeitos eletricamente ativos nessa região, investigou-se a incorporação de nitrogênio em estruturas de SiC através de tratamentos térmicos em amônia enriquecida isotopicamente (15NH3) e desenvolveu-se um novo método de incorporação de fósforo, fazendo sua deposição por pulverização catódica (sputtering) Os métodos de incorporação propostos resultaram em maiores quantidades de nitrogênio e de fósforo na região interfacial SiO2/SiC do que os encontrados na literatura, tornando-os promissores candidatos na passivação elétrica do SiC. Além da caracterização físico-química utilizando diferentes técnicas, também foi feita a caracterização elétrica de capacitores Metal-Óxido-Semicondutor (MOS) testando filmes de SiO2 obtidos por sputtering ou por crescimento térmico. Adicionalmente, desenvolveu-se uma rota de síntese de padrões de 18O mais estáveis ao longo do tempo para serem utilizados em análises por reação nuclear. Também foi proposta uma metodologia de quantificação de fósforo via análise por reação nuclear. Dos resultados obtidos neste doutorado, uma melhor compreensão da natureza e da origem dos defeitos presentes na região interfacial SiO2/SiC foi alcançada. Também obteve-se uma melhor compreensão de como os elementos passivadores nitrogênio e fósforo interagem nessa região. / Silicon carbide (SiC) is a semiconductor with adequate properties to substitute silicon in electronic devices in applications that require high power, high frequency, and/or high temperature. Besides, a silicon dioxide (SiO2) film can be thermally grown on SiC in a similar way to that on Si. However, these films present higher density of electrical defects in the SiO2/SiC interfacial region when compared to the SiO2/Si interface, which limits the quality of the fabricated devices. Thus, it is important to understand the origin of the electrical degradation and to develop methods to passivate the defects in the SiO2/SiC interfacial region in order to develop the SiC technology. Aiming at a better understanding of the nature of defects at the SiO2/SiC interfacial region, the interaction of SiO2/SiC structures with water vapor isotopically enriched (D2 18O) and the interaction with carbon monoxide (CO), one of the SiC thermal oxidation by-products, were investigated. It was observed that the interaction with CO generates positive charges in the structure and that the deuterium incorporation from the water vapor is strongly dependent on the formation route of the SiO2 film. Knowing that nitrogen and phosphorous incorporation in the SiO2/SiC interfacial region are efficient methods to reduce the number of electrical defects in this region, the nitrogen incorporation in SiC structures by isotopically enriched ammonia (15NH3) annealings was investigated and a new method to incorporate phosphorous, by sputtering deposition was developed The proposed incorporation methods resulted in higher amounts of nitrogen and phosphorous then those found in literature, making them promising candidates to the electrical passivation of SiC. Besides the physico-chemical characterization using different techniques, the electrical characterization of Metal-Oxide-Semiconductor (MOS) capacitors was also performed, testing SiO2 films obtained by sputtering deposition or thermally grown. Additionally, a route to synthesize 18O standards for nuclear reaction analyses that are more stable over time was developed. Besides, a methodology to quantify phosphorous by nuclear reaction analysis was proposed. From the results obtained in this PhD thesis, a better understanding of the nature and the origin of defects present in the SiO2/SiC interfacial region was obtained, as well as a better understanding on how the passivating elements nitrogen and phosphorous interact in this region.

O carbeto de silício (SiC) é um semicondutor com propriedades adequadas para substituir o silício em dispositivos eletrônicos em aplicações que exijam alta potência, alta freqüência e/ou temperatura. Além disso, um filme de dióxido de silício (SiO2) pode ser crescido termicamente sobre o SiC de maneira análoga a sobre silício, permitindo que a tecnologia já existente para a fabricação de dispositivos utilizando Si possa ser adaptada para o caso do SiC. No entanto, filmes crescidos termicamente sobre SiC apresentam maior densidade de defeitos eletricamente ativos na região interfacial SiO2/SiC que no SiO2/Si. Assim, compreender a origem e os parâmetros que afetam essa degradação elétrica é um importante passo para a tecnologia do SiC. A primeira parte deste trabalho teve como objetivo compreender o efeito de parâmetros de oxidação (pressão de oxigênio e tempo de oxidação) no crescimento térmico de filmes de dióxido de silício sobre substratos de carbeto de silício. As oxidações foram realizadas em ambiente rico em 18O2 e a influência na taxa de crescimento térmico dos filmes de Si18O2 e nas espessuras das regiões interfaciais formadas entre o filme dielétrico e o substrato foram investigadas utilizando análises por reação nuclear. Para correlacionar as modificações nas propriedades investigadas com as propriedades elétricas das amostras, estruturas metal-óxidosemicondutor foram fabricadas e levantamento de curvas corrente-voltagem e capacitânciavoltagem foi realizado. Com isso, pretendeu-se melhor compreender a origem da degradação elétrica gerada pela oxidação térmica no SiC. Observou-se que a taxa de crescimento térmico dos filmes de SiO2 depende de um parâmetro dado pelo produto do tempo de oxidação e da pressão de oxigênio, para as condições testadas. O deslocamento da tensão de banda plana com relação ao valor ideal mostrou-se igualmente dependente desse parâmetro, indicando que uma maior degradação elétrica na região interfacial SiO2/SiC ocorrerá conforme o filme fica mais espesso devido ao aumento dos parâmetros investigados. Não observaram-se modificações nas espessuras da região interfacial SiO2/SiC e na tensão de ruptura dielétrica dos filmes de SiO2 atribuídas aos parâmetros de oxidação testados. Na segunda parte deste trabalho, visando minimizar a degradação elétrica da região interfacial SiO2/SiC gerada pela oxidação térmica do SiC, propôs-se crescer termicamente, em uma condição mínima de oxidação, um filme muito fino e estequiométrico de SiO2, monitorado por espectroscopia de fotoelétrons induzidos por raios X. Para formar filmes mais espessos de SiO2 e poder fabricar estruturas MOS, depositaram-se filmes de SiO2 por sputtering. As espessuras e estequiometria dos filmes depositados foram determinadas por espectrometria de retroespalhamento Rutherford com ou sem canalização. As estruturas MOS em que o filme fino de SiO2 foi crescido termicamente antes da deposição apresentaram menor deslocamento da tensão de banda plana com relação ao valor ideal e maior tensão de ruptura dielétrica do que as amostras em que o filme foi apenas crescido termicamente ou apenas depositado, confirmando a minimização da degradação elétrica da região interfacial SiO2/SiC pela rota proposta. O efeito de um tratamento térmico em ambiente inerte de Ar nas estruturas também foi investigado. Observou-se uma degradação elétrica na região interfacial SiO2/SiC devido a esse tratamento. Análises por reação nuclear indicaram que o filme fino crescido termicamente não permaneceu estável durante o tratamento térmico, perdendo oxigênio para o ambiente gasoso e misturando os isótopos de oxigênio do filme crescido termicamente com o do filme depositado. / Silicon carbide (SiC) is a semiconductor with adequate properties to substitute silicon in electronic devices in applications that requires high power, high frequency, and/or high temperature. Besides, a silicon dioxide (SiO2) film can be thermally grown on SiC in a similar way to that on Si, allowing that technology already used to fabricate devices based on Si to be adapted to the SiC case. However, the oxide films thermally grown on SiC present higher density of electrical defects at the SiO2/SiC interfacial region when compared to the SiO2/Si. Thus, the understanding of the origin and what parameters affect the electrical degradation is an important step to the SiC technology. The first part of this work aimed to understand the effect of oxidation parameters (oxygen pressure and oxidation time) in the thermal growth of silicon dioxide films on silicon carbide substrates. The oxidations were performed in an 18O2 rich ambient and the influence on the growth rate of the Si18O2 films and on the interfacial region thickness formed between the dielectric film and the substrate were investigated using nuclear reaction analyses. To correlate the modifications observed in these properties with modifications in the electrical properties, metal-oxide-semiconductors structures were fabricated and current-voltage and capacitancevoltage curves were obtained. The aim was to understand the origin of the electrical degradation due to the thermal oxidation of silicon carbide. It was observed that the growth rate of the Si18O2 films depends on the parameter given by the product of the oxygen pressure and the oxidation time, under the conditions tested. The flatband voltage shift with respect to the ideal value was also influenced by the same parameter, indicating that a larger electrical degradation in the SiO2/SiC interfacial region will occur as the film becomes thicker due to the increase of the values of the investigated parameters. No modifications were observed in the SiO2/SiC interfacial region thickness and in the dielectric breakdown voltage of the SiO2 films that could be attributed to the oxidation parameters tested. In the second part of this work, in order to minimize electrical degradation due to thermal oxidation of silicon carbide, a stoichiometric SiO2 film with minimal thickness was thermally grown, monitored by X-ray photoelectron spectroscopy. To obtain thicker films and to fabricate MOS structures, a SiO2 film was deposited by sputtering. The thicknesses and stoichiometries of the deposited films were determined by Rutherford backscattering spectrometry using or not the channeling geometry. The MOS structures in which a thin film was thermally grown before the deposition presented smaller flatband voltage shift and higher breakdown voltage when compared to SiO2 films only thermally grown or only deposited directly on SiC, confirming that the electrical degradation in the SiO2/SiC interfacial region was minimized using the proposed route. The effect of one thermal treatment in argon in the structures was also investigated. An electrical degradation in the SiO2/4H-SiC interface was observed. Nuclear reaction analyses indicated that the thin film thermally grown was not stable during the annealing, loosing O to the gaseous ambient and mixing O isotopes of the thermally grown film with those of the deposited film.

Cette thèse traite l’étude et le contrôle d’un hacheur élévateur à 6 phases entrelacées basé sur des semi-conducteurs en carbure de silicium (SiC) et des inductances couplées inverses pour véhicules électriques à pile à combustible (FCEV). . L'ondulation du courant dans la pile est combustible est considérablement réduite et la durée de vie de celle-ci peut être prolongée. Les semi-conducteurs en SiC, en raison de leurs faibles pertes, permettent de meilleures performances thermiques et une fréquence de commutation plus élevée. Les volumes des composants passifs (inductances et condensateurs) sont ainsi réduits. Grâce aux inductances à couplage inverse, les pertes du noyau magnétique et du bobinage sont réduites.La stratégie de contrôle par mode glissant est développée en raison de sa grande robustesse face aux variations de paramètres. La fonctionnalité de détection en ligne de spectroscopie d'impédance électrochimique (SIE) est intégrée avec succès à l’algorithme de contrôle par mode glissant.La validation HIL (Hardware In the Loop) en temps réel du convertisseur proposé est obtenue en implémentant la partie puissance dans le FPGA et la partie commande dans le microprocesseur du système de prototypage MicroLabBox de dSPACE. La comparaison entre la simulation hors ligne et la validation HIL a démontré le comportement dynamique du convertisseur proposé et validé la mise en œuvre du contrôle dans un contrôleur en temps réel avant de futurs tests sur un banc d'essai expérimental à échelle réduite. / The objective of this thesis work is devoted to the design and control of a DC/DC boost converter for Fuel Cell Electric Vehicle (FCEV) application. A 6-phase Interleaved Boost Converter (IBC) based on Silicon Carbide (SiC) semiconductors and inversed coupled inductors of cyclic cascade structure is proposed. The input current ripple is reduced significantly and the lifespan of Polymer Electrolyte Membrane Fuel Cell (PEMFC) can be extended. Low power losses, good thermal performance and high switching frequency have been gained by the selected SiC-based semiconductors. The volumes of passive components (inductors and capacitors) are reduced. Thanks to the inverse coupled inductors, the core losses and copper losses are decreased and the compact magnetic component is achieved.Sliding-Mode Control (SMC) strategy is developed due to its high robust to parameter variations. on-line Electrochemical Impedance Spectroscopy (EIS) detection functionality is successfully integrated with SMC. No additional equipment and sensor is required.The real-time Hardwar In the Loop (HIL) validation of the proposed converter is achieved by implement the power part into the FPGA and the control into the microprocessor in the MicroLabBox prototyping system from dSPACE. The comparison between off-line simulation and HIL validation demonstrated the dynamic behavior of the proposed converter and validated the implementation of the control into a real time controller before future tests on experimental test bench.

No description available.

The corrosion behaviour of cast Al-Mg alloy A535 and its composites containing 10 wt.% and 15 wt.% fly ash, and 10 wt.% hybrid reinforcement (5 wt.% fly ash + 5 wt.% SiC) was investigated using weight-loss and electrochemical corrosion tests, optical microscopy, Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray Spectroscopy (EDS). The tests were conducted in fresh water collected from the South Saskatchewan River and 3.5 wt.% NaCl solution at room temperature. The pH of the salt solution varied from 3 to 9. For comparison, two other aluminum alloys, AA2618 and AA5083-H116, were tested in the same electrolytes. The results of the weight-loss corrosion test showed that unreinforced A535 alloy had a lower corrosion rate in fresh water and seawater environments than the composites at all the tested pH values. The corrosion rate of the composites increased with increasing fly ash content. As expected, the corrosion rates of A535 alloy and the composites tested in fresh water were lower than those in salt solution. The results of the potentiodynamic and cyclic polarization electrochemical tests showed that the corrosion potential (Ecorr) and pitting potential (Epit) of the alloy were more positive than those of the composites. The corrosion and pitting potentials of the composites became more negative (active) with increasing fly ash content. The composites showed more positive (noble) repassivation or protection potential (Erp) than the matrix alloy, with the positivity increasing with fly ash content. Analysis of the electrochemical noise data showed that pitting corrosion was the dominant mode of corrosion for the alloy in 3.5 wt.% NaCl solution. Optical microscopy and SEM revealed that Mg2Si phase and Al-Mg intermetallics corroded preferentially to the matrix. The EDS data indicated that the protective oxide film formed on A535 contained Al2O3 and MgO.

The corrosion behaviour of cast Al-Mg alloy A535 and its composites containing 10 wt.% and 15 wt.% fly ash, and 10 wt.% hybrid reinforcement (5 wt.% fly ash + 5 wt.% SiC) was investigated using weight-loss and electrochemical corrosion tests, optical microscopy, Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray Spectroscopy (EDS). The tests were conducted in fresh water collected from the South Saskatchewan River and 3.5 wt.% NaCl solution at room temperature. The pH of the salt solution varied from 3 to 9. For comparison, two other aluminum alloys, AA2618 and AA5083-H116, were tested in the same electrolytes. The results of the weight-loss corrosion test showed that unreinforced A535 alloy had a lower corrosion rate in fresh water and seawater environments than the composites at all the tested pH values. The corrosion rate of the composites increased with increasing fly ash content. As expected, the corrosion rates of A535 alloy and the composites tested in fresh water were lower than those in salt solution. The results of the potentiodynamic and cyclic polarization electrochemical tests showed that the corrosion potential (Ecorr) and pitting potential (Epit) of the alloy were more positive than those of the composites. The corrosion and pitting potentials of the composites became more negative (active) with increasing fly ash content. The composites showed more positive (noble) repassivation or protection potential (Erp) than the matrix alloy, with the positivity increasing with fly ash content. Analysis of the electrochemical noise data showed that pitting corrosion was the dominant mode of corrosion for the alloy in 3.5 wt.% NaCl solution. Optical microscopy and SEM revealed that Mg2Si phase and Al-Mg intermetallics corroded preferentially to the matrix. The EDS data indicated that the protective oxide film formed on A535 contained Al2O3 and MgO.