L'AGS fournit un faisceau de proton polarisé à RHIC. Le faisceau est accéléré dans l'AGS de Gγ = 4.5 à Gγ = 45.5 et la transmission de la polarisation est critique pour le programme de spin de RHIC. Au cours des dernières années, divers systèmes ont été mis en œuvre pour améliorer la transmission de la polarisation dans l'AGS. Ces améliorations consistent essentiellement en l'introduction de deux serpents Siberien partiels et du system de saut de nombre d'onde. Cependant, la transmission de la polarisation n'atteint pas encore 100 % durant le cycle d'accélération de l'AGS. L'efficacité actelle de la transmission de la polarisation est estimée à environ 85 % dans les conditions de fonctionnement typiques. Comprendre les sources de dépolarisation dans l'AGS est essentiel pour améliorer les performances en protons polarisés de la machine. La dynamique complexe de faisceau et de spin, notamment en présence des aimaint spécialisés appelé serpent Sibériens, justifient le fort intérÃa t pour des méthodes de simulation originales. Le code Zgoubi, capable de résoudre l'équation du mouvement et de l'évolution du spin directement à partir d'une carte de champs, est utilisé pour modéliser l'AGS. Un modèle de l'AGS utilisant le code Zgoubi a pout cette reaison été développé et interfacé avec le système actuel par une simple commande: l'AgsFromSnapRampCmd. L'interfa ̧age avec le système de contrôle de la machine permet la modélisation rapide en utilisant les paramètres de réels la machine. Ces développements ont permis de reproduire fidèlement l'optique de l'AGS le long du cycle d'accéleration. Des développements supplémentaires sur le code Zgoubi, ainsi que sur des outils de post-traitement et de pré-traitement, ont fourni au code la possibilité de suivre les faisceaux sur de nombreux tours, ce qui s'avère être fondamental pour une représentation realiste du cycle d'accélération complet de la machine. Des simulations de faisceaux sur de nombreux tours dans l'AGS, en utilisant des conditions réalistes de faisceau et de machine, ont fourni une unique vision des les mécanismes sous-jacents de l'évolution de l'émittance et de la polarisation du faisceau au cours du cycle d'accélération. Des programmes de post-traitement ont été développés pour permettre la représentation des quantités pertinentes des données simulées par Zgoubi.Les simulations se sont avérées particulièrement utiles pour mieux comprendre les pertes de polarisation à travers résonances horizontales intrinsèques de spin. Le modèle Zgoubi ainsi que les outils développés ont également été utilisées pour certaines applications directes. Par exemple, les simulations d'expériences de faisceau ont permis l'estimation précise des gains de polarisation attendus en fonction des changements apportés. En particulier, des simulations d'expériences impliquant le système de saut des nombres d'onde ont fournis des estimations précises de la polarisation gagné et permis le choix des conditions optimales de la machine. / The AGS provides a polarized proton beam to RHIC. The beam is accelerated in the AGS from Gγ = 4.5 to Gγ = 45.5 and the polarization transmission is critical to the RHIC spin program. In the recent years, various systems were implemented to improve the AGS polarization transmission. These upgrades include the double partial snakes configuration and the tune jumps system. However, 100 % polarization transmission through the AGS acceleration cycle is not yet reached. The current efficiency of the polarization transmission is estimated to be around 85 % in typical running conditions. Understanding the sources of depolarization in the AGS is critical to improve the AGS polarized proton performances. The complexity of beam and spin dynamics, which is in part due to the specialized Siberian snake magnets, drove a strong interest for original methods of simulations. For that, the Zgoubi code, capable of direct particle and spin tracking through field maps, was here used to model the AGS. A model of the AGS using the Zgoubi code was developed and interfaced with the current system through a simple command: the AgsFromSnapRampCmd. Interfacing with the machine control system allows for fast modelization using actual machine parameters. Those developments allowed the model to realistically reproduce the optics of the AGS along the acceleration ramp. Additional developments on the Zgoubi code, as well as on post-processing and pre-processing tools, granted long term multiturn beam tracking capabilities: the tracking of realistic beams along the complete AGS acceleration cycle. Beam multiturn tracking simulations in the AGS, using realistic beam and machine parameters, provided a unique insight into the mechanisms behind the evolution of the beam emittance and polarization during the acceleration cycle. Post-processing softwares were developed to allow the representation of the relevant quantities from the Zgoubi simulations data. The Zgoubi simulations proved particularly useful to better understand the polarization losses through horizontal intrinsic spin resonances The Zgoubi model as well as the tools developed were also used for some direct applications. For instance, some beam experiment simulations allowed an accurate estimation of the expected polarization gains from machine changes. In particular, the simulations that involved involved the tune jumps system provided an accurate estimation of polarization gains and the optimum settings that would improve the performance of the AGS.

No description available.

"La investigación del patrimonio del ejecutado" analiza los arts. 589, 590 y 591 de la Ley española 1/2000, de Enjuiciamiento Civil.El estudio abarca el conjunto de mecanismos legales previstos para determinar el objeto del embargo, a saber, la manifestación de bienes del ejecutado, la investigación judicial, la colaboración de terceros y la investigación del ejecutante. La tesis analiza en profundidad el régimen jurídico de dichos medios de investigación y sus límites (en particular, los derechos fundamentales del ejecutado), proponiendo formas de rellenar las lagunas legales y de mejorar la coordinación entre los distintos medios de investigación.La tesis examina asimismo el Derecho comparado, buscando en él soluciones practicables para el Derecho español. / The thesis analyzes Articles 589, 590 and 591 of the Spanish Code of Civil Procedure (Ley 1/2000, de Enjuiciamiento Civil).The study focuses on the instruments for the disclosure of assets in order to enforce judicial decisions. These instruments are the debtor's declaration of assets, the tracing of assets by the Court, the collaboration of third parties and the tracing of assets by the creditor.The thesis makes an in-depth analysis under Spanish law of these mechanisms and its limits (in particular, the fundamental rights of the debtor). It also proposes ways to fill the gaps of the Spanish legislation and to improve the coordination between each of the instruments to trace and disclose the debtor's assets for enforcement purposes.The study also analyses Comparative Law, in the search of other practical solutions for Spanish Law.

L'AGS fournit un faisceau de proton polarisé à RHIC. Le faisceau est accéléré dans l'AGS de Gγ = 4.5 à Gγ = 45.5 et la transmission de la polarisation est critique pour le programme de spin de RHIC. Au cours des dernières années, divers systèmes ont été mis en œuvre pour améliorer la transmission de la polarisation dans l'AGS. Ces améliorations consistent essentiellement en l'introduction de deux serpents Siberien partiels et du system de saut de nombre d'onde. Cependant, la transmission de la polarisation n'atteint pas encore 100 % durant le cycle d'accélération de l'AGS. L'efficacité actelle de la transmission de la polarisation est estimée à environ 85 % dans les conditions de fonctionnement typiques. Comprendre les sources de dépolarisation dans l'AGS est essentiel pour améliorer les performances en protons polarisés de la machine. La dynamique complexe de faisceau et de spin, notamment en présence des aimaint spécialisés appelé serpent Sibériens, justifient le fort intérÃa t pour des méthodes de simulation originales. Le code Zgoubi, capable de résoudre l'équation du mouvement et de l'évolution du spin directement à partir d'une carte de champs, est utilisé pour modéliser l'AGS. Un modèle de l'AGS utilisant le code Zgoubi a pout cette reaison été développé et interfacé avec le système actuel par une simple commande: l'AgsFromSnapRampCmd. L'interfa ̧age avec le système de contrôle de la machine permet la modélisation rapide en utilisant les paramètres de réels la machine. Ces développements ont permis de reproduire fidèlement l'optique de l'AGS le long du cycle d'accéleration. Des développements supplémentaires sur le code Zgoubi, ainsi que sur des outils de post-traitement et de pré-traitement, ont fourni au code la possibilité de suivre les faisceaux sur de nombreux tours, ce qui s'avère être fondamental pour une représentation realiste du cycle d'accélération complet de la machine. Des simulations de faisceaux sur de nombreux tours dans l'AGS, en utilisant des conditions réalistes de faisceau et de machine, ont fourni une unique vision des les mécanismes sous-jacents de l'évolution de l'émittance et de la polarisation du faisceau au cours du cycle d'accélération. Des programmes de post-traitement ont été développés pour permettre la représentation des quantités pertinentes des données simulées par Zgoubi.Les simulations se sont avérées particulièrement utiles pour mieux comprendre les pertes de polarisation à travers résonances horizontales intrinsèques de spin. Le modèle Zgoubi ainsi que les outils développés ont également été utilisées pour certaines applications directes. Par exemple, les simulations d'expériences de faisceau ont permis l'estimation précise des gains de polarisation attendus en fonction des changements apportés. En particulier, des simulations d'expériences impliquant le système de saut des nombres d'onde ont fournis des estimations précises de la polarisation gagné et permis le choix des conditions optimales de la machine. / The AGS provides a polarized proton beam to RHIC. The beam is accelerated in the AGS from Gγ = 4.5 to Gγ = 45.5 and the polarization transmission is critical to the RHIC spin program. In the recent years, various systems were implemented to improve the AGS polarization transmission. These upgrades include the double partial snakes configuration and the tune jumps system. However, 100 % polarization transmission through the AGS acceleration cycle is not yet reached. The current efficiency of the polarization transmission is estimated to be around 85 % in typical running conditions. Understanding the sources of depolarization in the AGS is critical to improve the AGS polarized proton performances. The complexity of beam and spin dynamics, which is in part due to the specialized Siberian snake magnets, drove a strong interest for original methods of simulations. For that, the Zgoubi code, capable of direct particle and spin tracking through field maps, was here used to model the AGS. A model of the AGS using the Zgoubi code was developed and interfaced with the current system through a simple command: the AgsFromSnapRampCmd. Interfacing with the machine control system allows for fast modelization using actual machine parameters. Those developments allowed the model to realistically reproduce the optics of the AGS along the acceleration ramp. Additional developments on the Zgoubi code, as well as on post-processing and pre-processing tools, granted long term multiturn beam tracking capabilities: the tracking of realistic beams along the complete AGS acceleration cycle. Beam multiturn tracking simulations in the AGS, using realistic beam and machine parameters, provided a unique insight into the mechanisms behind the evolution of the beam emittance and polarization during the acceleration cycle. Post-processing softwares were developed to allow the representation of the relevant quantities from the Zgoubi simulations data. The Zgoubi simulations proved particularly useful to better understand the polarization losses through horizontal intrinsic spin resonances The Zgoubi model as well as the tools developed were also used for some direct applications. For instance, some beam experiment simulations allowed an accurate estimation of the expected polarization gains from machine changes. In particular, the simulations that involved involved the tune jumps system provided an accurate estimation of polarization gains and the optimum settings that would improve the performance of the AGS.

Les systèmes d'éclairage automobiles sont conçus pour éclairer la route de manière optimale. Une dégradation des optiques et des matériaux plastiques peut altérer la qualité du faisceau lumineux. En phase de conception, les simulations thermiques visent à minimiser les coûts engendrés par les tests expérimentaux réalisés sur des maquettes. Avec le développement de nouvelles optiques, la méthode numérique des ordonnées discrètes, utilisée pour le calcul des transferts radiatifs, souffre d'un manque de précision en raison d'une discrétisation spatiale limitée pour les réflexions spéculaires. Une augmentation de la discrétisation pourrait mener à des temps de calculs importants. Pour palier à ce problème, la méthode de Monte Carlo a été choisie afin d'évaluer les densités de flux aux parois dans le cas des surfaces opaques, ou un terme source radiatif dans le cas des matériaux semi-Transparents. Notre algorithme est implémenté dans l'environnement de développement EDStar. Cet environnement inclut la bibliothèque de synthèses d'images PBRT permettant de reproduire les trajets optiques dans une géométrie 3D complexe. L'étude porte sur des produits d'éclairage composés de lampes, ainsi le développement d'un modèle numérique fiable requiert des paramètres pertinents en entrée de modèle. Les travaux ont donc été scindés en trois axes d'études. Le premier inclut une phase de caractérisation des propriétés thermiques d'une lampe à incandescence (25W). Différentes méthodes de mesures ont été étudiées pour déterminer la température du filament, moteur des transferts thermiques, et la température de l'enveloppe. Le second axe consiste à développer un modèle des transferts radiatifs dans le système d'éclairage. L'objectif est de localiser les zones de concentration du rayonnement et estimer leur étendue. Enfin, le troisième axe vise à coupler le calcul radiatif à des simulations thermiques dans l'outil de CFD Fluent. La CFD (Computational Fluid Dynamics) est ici nécessaire pour résoudre les problèmes convectifs couplés aux autres transferts thermiques dans un produit industriel. / Automotive lighting systems are designed to illuminate the road optimally. Degradation of optical properties or plastics materials may altering the quality of lighting. In the design stage, thermal simulations are intended to minimize the costs of experimental tests performed on prototypes. With the apparition of new headlights optics, the Discrete Ordinates method (DO) is not suitable in certain cases due to a lack of accuracy when dealing with specular reflections and refractions. A raise of the spatial discretization could lead to significant time computation. To overcome this problem, we chose the Monte Carlo method in order to estimate flux densities to the walls in the case of opaque surfaces, or to estimate a radiative source term in the case of semi-Transparent media. Our algorithm is implemented in EDStar coding environment. This environment includes the PBRT synthesis images library allowing the use of raytracing techniques with our algorithm, thus reproducing optical paths of rays in a complex 3D geometry. The development of a reliable numerical model requires relevant parameters in input. This need led us to split the work into three main parts. The first axis includes a characterization phase of thermal properties of an incandescent lamp (25W) in order to model its radiative emission. Different measurements methods have been investigated to determine the temperature of the filament, which is the origine of heat transfers, and the temperature of the glass envelope. The second axis consists in obtaining a precise distribution of flux density distributions in order to locate hot spots and assess their extent. Finally, the third part of study is to couple the radiative calculation to CFD (Computational Fluid Dynamics) simulations. CFD is here necessary to solve problems with convective phenomena coupled with other heat transfers in an industrial product.

No presente trabalho, foram investigados os efeitos de tratamentos térmicos em vapor d’água, em óxido nítrico e em hidrogênio nas propriedades físico-químicas e elétricas de filmes dielétricos crescidos termicamente e/ou depositadas por sputtering sobre lâminas de carbeto de silício. A caracterização foi realizada antes e após tratamentos térmicos nesses ambientes através de técnicas que utilizam feixes de íons. Em alguns casos, a caracterização elétrica também foi realizada. A investigação da incorporação e distribuição em profundidade de hidrogênio e oxigênio após tratamentos de SiO2/SiC e SiO2/Si em vapor d’água mostrou que há diferenças marcantes na interação da água com as duas estruturas. Observou-se maior incorporação de oxigênio no filme pré-existente de SiO2 sobre o SiC do que em SiO2/Si, evidenciando uma maior concentração de defeitos nos filmes sobre SiC. A incorporação de hidrogênio também foi maior nas estruturas SiO2/SiC, sendo observada em todas as regiões do filme de SiO2 crescido sobre SiC. Nos filmes crescidos sobre Si, no entanto, a incorporação deuse, principalmente, na região da superfície do filme de óxido. A interação do vapor d’água com estruturas SiO2/SiC e SiO2/Si com filmes depositados por sputtering também foi investigada. Foi constatada uma incorporação distinta da observada para essas estruturas quando seus óxidos foram crescidos termicamente. A incorporação de hidrogênio do vapor d’água em estruturas com filmes de SiO2 depositados por sputtering sobre SiC e sobre Si ocorre, principalmente, na interface SiO2/substrato. A distribuição em profundidade de oxigênio após a exposição a vapor d'água a 800°C revelou que ele é incorporado em toda a espessura dos óxidos depositados sobre ambos os substratos, evidenciando a alta mobilidade dos átomos de oxigênio nesses filmes de óxido. O crescimento térmico antes da deposição de SiO2 sobre o SiC levou à incorporação de menores quantidades de hidrogênio, quando comparadas com as estruturas relativas a filmes apenas depositados. No entanto, à medida que o tempo de oxidação térmica foi aumentado, observou-se maior incorporação de hidrogênio, o que foi atribuído à formação de defeitos no filme de óxido susceptíveis à interação com o mesmo. O crescimento térmico por um tempo curto seguido pela deposição de SiO2 e o crescimento térmico não seguido de outro tratamento levaram a menores incorporações de D do que a deposição não seguida de outro tratamento, o que pode ser correlacionado com as melhores características elétricas observadas nessas estruturas. Outro tema abordado foi a incorporação de hidrogênio através de tratamento térmico em 2H2, com e sem a presença de um eletrodo de platina, em filmes dielétricos crescidos em atmosfera de O2, NO e via tratamento térmico sequencial nesses dois gases. Quando o crescimento térmico em O2 foi seguido de tratamento em NO, foi observada uma forte troca isotópica entre o oxigênio da fase gasosa e o oxigênio do filme de SiO2, evidenciando a alta mobilidade dos átomos de oxigênio nesses filmes. A incorporação de hidrogênio mostrou-se fortemente dependente da rota utilizada no crescimento do filme dielétrico. Sem a presença do eletrodo de platina, o crescimento do filme dielétrico direto em NO foi a rota que apresentou a maior incorporação de hidrogênio. A presença de platina, por sua vez, promoveu um aumento na incorporação de hidrogênio nos filmes dielétricos obtidos através das três rotas de crescimento. Em todos os casos, observou-se que a incorporação de hidrogênio ocorre, principalmente, na região da interface entre o filme dielétrico e o SiC. A incorporação de maiores quantidades de hidrogênio foi associada com a presença de N previamente incorporado. A atmosfera reativa utilizada no crescimento térmico dos filmes dielétricos também mostrou influência nas características elétricas das estruturas analisadas. A caracterização por curvas C-V mostrou um aumento no deslocamento da tensão de banda plana após tratamentos térmicos em 2H2, indicando o aumento e/ou formação de carga positiva. Por fim, a interação de vapor d'água em estruturas de SiO2/SiC e de SiO2/Si com filmes crescidos termicamente e tratadas em NO foi investigada. Observou-se que as estruturas SiO2/SiC que foram submetidas a tratamentos térmicos em NO apresentaram menor incorporação de hidrogênio, devido à exposição a vapor d'água. Esse efeito também foi observado em estruturas SiO2/SiC quando o pós-tratamento em NO foi substituído por um póstratamento em argônio na mesma temperatura e tempo, indicando que a temperatura de tratamento é a responsável pelas menores incorporações de hidrogênio, não a reatividade do gás empregado. / In the present work, effects of thermal treatments in water vapor, in nitric oxide, and in hydrogen in the physicochemical and in the electrical properties of dielectric films thermally grown and/or deposited by sputtering on silicon carbide were investigated. The characterization was performed using ion beam analyses before and after thermal treatments in these atmospheres. In some cases, the electrical characterization was also performed. The investigation of the incorporation and depth distribution of hydrogen and oxygen after annealing of SiO2/SiC and SiO2/Si in water vapor evidenced that there are striking differences regarding water interaction with these two structures. It was observed larger oxygen incorporation in the pre-existent SiO2 film on SiC than in the SiO2/Si, which evidences higher concentration of defects in oxide films on SiC. The incorporation of hydrogen was also larger in SiO2/SiC structures, being observed in all regions of the dielectric film. In oxide films grown on Si, however, the incorporation occurred mainly in the surface region of the oxide. The interaction of water vapor with SiO2/SiC and SiO2/Si structures, whose films were deposited by sputtering, was also investigated. A distinct incorporation was observed when comparing results from structures whose oxides were thermally grown. The incorporation of hydrogen from water vapor in structures in which SiO2 films were deposited by sputtering on SiC and on Si, occurred mainly in the SiO2/substrate interface. The oxygen depth distribution after exposure to water vapor at 800°C revealed that it was incorporated in all depths of the oxides that were deposited on both substrates, evidencing the high mobility of oxygen atoms in these oxide films. The thermal growth prior to SiO2 deposition on SiC led to the incorporation of smaller amounts of hydrogen, compared with structures with films that were only deposited. Nevertheless, as the thermal oxidation time increases, a larger incorporation of hydrogen was observed, which was attributed to the formation of defects in the oxide film that are more likely to interact with hydrogen. The thermal growth for short time followed by the deposition of SiO2 and the thermal growth not followed by any other treatment led to lower amounts of hydrogen, when compared with the deposition not followed by another treatment, which can be correlated with the improvement in the electrical characteristics observed in these structures. Another subject investigated was the incorporation of hydrogen by 2H2 anneal, with and without the presence of platinum, in dielectric films thermally grown in O2, NO, and in sequential thermal treatments in these two atmospheres. In the case of thermal growth in O2 followed by NO anneal, it was observed a notable isotopic exchange between oxygen from the gas phase and oxygen from the SiO2 film, evidencing that oxygen atoms are highly mobile in these films. The incorporation of hydrogen was showed to be highly dependent on the route employed in the dielectric film growth, being the direct growth of dielectric films in NO the one that presented larger incorporation without the presence of Pt electrode. The presence of this metal increases the incorporation of hydrogen in all dielectric films. In all cases, it was observed that the incorporation of hydrogen occurred mainly in the interface region between the dielectric film and the SiC. The incorporation of larger amounts of hydrogen was associated with the presence of N that was previously incorporated. The reactive atmosphere employed in the thermal growth of dielectric films also was observed to affect electrical characteristics in analyzed structures. The characterization by C-V measurements evidenced an increase in the flatband voltage shift after annealing in 2H2, indicating the increase and/or the formation of positive charge. Finally, the interaction of water vapor in SiO2/SiC and SiO2/Si structures with dielectric films thermally grown and annealed in NO was investigated. It was observed that SiO2/SiC structures that were submitted to NO anneal presented less hydrogen incorporation due to exposure to water vapor. This behavior was also observed in SiO2/SiC structures when the NO anneal was replaced by an annealing in Ar at the same temperature and time, indicating that the temperature of the annealing was responsible by the less incorporation of hydrogen instead of the reactivity of the gas employed.

[pt] O crescimento da demanda por serviços de telecomunicações em terra firme também pode ser encontrado em ambientes marítimos por usuários a bordo de embarcações, sejam elas civis ou militares. Nestes ambientes, um fenômeno conhecido como duto de evaporação influencia a propagação eletromagnética na troposfera, proporcionando a comunicação ponto-a-ponto em distâncias além do horizonte rádio. Este trabalho utiliza a técnica de traçado de raios para analisar o comportamento da onda eletromagnética nestes meios. Foi elaborado um algoritmo capaz de traçar raios e determinar amplitudes e fases do campo elétrico em meios inomogêneos bidimensionais dado um mapa de refratividade modificada M. A partir destes mapas, o algoritmo calcula os gradientes verticais de M, que podem variar ao longo do percurso, e traça os raios, a partir da antena transmissora. Como aplicação, além de cenários com dutos de evaporação, foram utilizados mapas de M estimados com base em dados meteorológicos fornecidos por radiossondas lançadas no litoral brasileiro. Os resultados obtidos foram comparados aos fornecidos pelo software Advanced Refractive Effects Prediction System (AREPS), baseado na solução numérica de equação parabólica. Este trabalho também apresenta resultados estatísticos de dutos de evaporação no litoral brasileiro, a partir de dados meteorológicos fornecidos por boias oceanográficas do Programa Nacional de Boias (PNBOIA). Para tal, é utilizado, com pequenas alterações, o algoritmo de Paulus-Jeske, que estima a altura de dutos de evaporação. / [en] The demand growth for land-based telecommunications services can also be found in maritime environments by users on board ships, whether civilian or military. In these environments, a phenomenon known as the evaporation duct influences electromagnetic propagation in the troposphere, providing point-to-point communication at distances beyond the radio horizon. This work uses the raytracing technique to analyze the behavior of electromagnetic waves in these media. An algorithm capable of tracing rays and determining electric field amplitudes and phases in two-dimensional inhomogeneous media was developed, given a map of modified refractivity M. From these maps, the algorithm calculates the vertical gradients of M, which can vary along the path, and traces rays from the transmitting antenna. As an application, in addition to scenarios with evaporation ducts, M maps were estimated based on meteorological data provided by radiosondes launched in the Brazilian coast. The results obtained were compared with those provided by the Advanced Refractive Effects Prediction System (AREPS) software, based on the numerical solution of parabolic equation. This work also presents statistical results of evaporation ducts in the Brazilian coast, based on meteorological data provided by oceanographic buoys of Programa Nacional de Boias (PNBOIA). For this, the Paulus-Jeske algorithm, which estimates the height of the evaporation ducts, is used with small changes.

Master of Science / Department of Electrical and Computer Engineering / Faryad Darabi Sahneh / Recent experience of Ebola outbreak of 2014 highlighted the importance of immediate response to impede Ebola transmission at its very early stage. To this aim, efficient and effective allocation of limited resources is crucial. Among standard interventions is the practice of following up with physical contacts of individuals diagnosed with Ebola virus disease -- known as contact tracing. In an effort to objectively understand the effect of possible contact tracing protocols, we explicitly develop a model of Ebola transmission incorporating contact tracing. Our modeling framework has several features to suit early–stage Ebola transmission: 1) the network model is patient–centric because when number of infected cases are small only the myopic networks of infected individuals matter and the rest of possible social contacts are irrelevant, 2) the Ebola disease model is individual–based and stochastic because at the early stages of spread, random fluctuations are significant and must be captured appropriately, 3) the contact tracing model is parameterizable to analyze the impact of critical aspects of contact tracing protocols. Notably, we propose an activity driven network approach to contact tracing, and develop a Monte-Carlo method to compute the basic reproductive number of the disease spread in different scenarios. Exhaustive simulation experiments suggest that while contact tracing is important in stopping the Ebola spread, it does not need to be done too urgently. This result is due to rather long incubation period of Ebola disease infection. However, immediate hospitalization of infected cases is crucial and requires the most attention and resource allocation. Moreover, to investigate the impact of mitigation strategies in the 2014 Ebola outbreak, we consider reported data in Guinea, one the three West Africa countries that had experienced the Ebola virus disease outbreak. We formulate a multivariate sequential Monte Carlo filter that utilizes mechanistic models for Ebola virus propagation to simultaneously estimate the disease progression states and the model parameters according to reported incidence data streams. This method has the advantage of performing the inference online as the new data becomes available and estimating the evolution of the basic reproductive ratio R₀(t) throughout the Ebola outbreak. Our analysis identifies a peak in the basic reproductive ratio close to the time of Ebola cases reports in Europe and the USA.

Made available in DSpace on 2014-12-17T14:55:26Z (GMT). No. of bitstreams: 1 FranciscoAA_Capa_ate_11.pdf: 7331054 bytes, checksum: 95b093e73afc9c2e5df63a5d0c5b2c6b (MD5) Previous issue date: 2005-07-06 / A 2.5D ray-tracing propagation model is proposed to predict radio loss in indoor environment. Specifically, we opted for the Shooting and Bouncing Rays (SBR) method, together with the Geometrieal Theory of Diffrartion (GTD). Besides the line-of-sight propagation (LOS), we consider that the radio waves may experience reflection, refraction, and diffraction (NLOS). In the Shooting and Bouncing Rays (SBR) method, the transmitter antenna launches a bundle of rays that may or may not reach the receiver. Considering the transmitting antenna as a point, the rays will start to launch from this position and can reach the receiver either directly or after reflections, refractions, diffractions, or even after any combination of the previous effects. To model the environment, a database is built to record geometrical characteristics and information on the constituent materials of the scenario. The database works independently of the simulation program, allowing robustness and flexibility to model other seenarios. Each propagation mechanism is treated separately. In line-of-sight propagation, the main contribution to the received signal comes from the direct ray, while reflected, refracted, and diffracted signal dominate when the line-of-sight is blocked. For this case, the transmitted signal reaches the receiver through more than one path, resulting in a multipath fading. The transmitting channel of a mobile system is simulated by moving either the transmitter or the receiver around the environment. The validity of the method is verified through simulations and measurements. The computed path losses are compared with the measured values at 1.8 GHz ftequency. The results were obtained for the main corridor and room classes adjacent to it. A reasonable agreement is observed. The numerical predictions are also compared with published data at 900 MHz and 2.44 GHz frequencies showing good convergence / Este trabalho apresenta um modelo 2,5D de tra?ado de raios para predi??o de propaga??o em ambientes interiores (indoor). Especificamente, optou-se pelo M?todo dos Raios For?ados (SBR) em combina??o com a Teoria Geom?trica da Difra??o (GTD). Considera-se que, al?m de propaga??o em visada direta (LOS), podem ocorrer os mecanismos de reflex?o, refra??o e difra??o (NLOS). No M?todo dos Raios For?ados (SBR), a antena transmissora lan?a um feixe de raios que pode ou n?o alcan?ar o receptor. Considerando a antena transmissora como elemento pontual, os raios s?o lan?ados dessa posi??o, podendo alcan?ar o receptor diretamente ou mediante reflex?es, refra??es, difra??es, ou pela combina??o dessas modalidades de propaga??o. Para o modelamento do ambiente, um banco de dados ? constru?do para armazenar as caracter?sticas geom?tricas e informa??es dos materiais constituintes do cen?rio. O banco de dados funciona independentemente do programa de simula??o, possibilitando robustez ? implementa??o e maior flexibilidade para a representa??o de outros ambientes. Cada mecanismo de propaga??o ? tratado separadamente. Na propaga??o em linha de visada, o raio direto oferece maior contribui??o ao sinal recebido, enquanto o raio refletido, refratado e difratado apresentam maior influ?ncia quando a propaga??o ocorre com obstru??o. Neste caso, o sinal transmitido alcan?a o receptor por diversas trajet?rias, ocorrendo desvanecimento por m?ltiplos percursos. O canal de transmiss?o, no sistema m?vel, ? simulado deslocando-se o transmissor ou o receptor ao longo do ambiente. A valida??o do m?todo ? verificada atrav?s de simula??es e medi??es. As perdas de percurso calculadas s?o comparadas com os valores medidos, na freq??ncia de 1,8 GHz. Os resultados s?o obtidos para ambientes de corredor e salas de aula adjacentes. Uma boa converg?ncia ? observada. Os resultados num?ricos deste trabalho s?o tamb?m comparados com os dispon?veis na literatura especializada, na freq??ncia de 900 MHz e 2,44 GHz, mostrando boa concord?ncia

No presente trabalho, foram investigados os efeitos de tratamentos térmicos em vapor d’água, em óxido nítrico e em hidrogênio nas propriedades físico-químicas e elétricas de filmes dielétricos crescidos termicamente e/ou depositadas por sputtering sobre lâminas de carbeto de silício. A caracterização foi realizada antes e após tratamentos térmicos nesses ambientes através de técnicas que utilizam feixes de íons. Em alguns casos, a caracterização elétrica também foi realizada. A investigação da incorporação e distribuição em profundidade de hidrogênio e oxigênio após tratamentos de SiO2/SiC e SiO2/Si em vapor d’água mostrou que há diferenças marcantes na interação da água com as duas estruturas. Observou-se maior incorporação de oxigênio no filme pré-existente de SiO2 sobre o SiC do que em SiO2/Si, evidenciando uma maior concentração de defeitos nos filmes sobre SiC. A incorporação de hidrogênio também foi maior nas estruturas SiO2/SiC, sendo observada em todas as regiões do filme de SiO2 crescido sobre SiC. Nos filmes crescidos sobre Si, no entanto, a incorporação deuse, principalmente, na região da superfície do filme de óxido. A interação do vapor d’água com estruturas SiO2/SiC e SiO2/Si com filmes depositados por sputtering também foi investigada. Foi constatada uma incorporação distinta da observada para essas estruturas quando seus óxidos foram crescidos termicamente. A incorporação de hidrogênio do vapor d’água em estruturas com filmes de SiO2 depositados por sputtering sobre SiC e sobre Si ocorre, principalmente, na interface SiO2/substrato. A distribuição em profundidade de oxigênio após a exposição a vapor d'água a 800°C revelou que ele é incorporado em toda a espessura dos óxidos depositados sobre ambos os substratos, evidenciando a alta mobilidade dos átomos de oxigênio nesses filmes de óxido. O crescimento térmico antes da deposição de SiO2 sobre o SiC levou à incorporação de menores quantidades de hidrogênio, quando comparadas com as estruturas relativas a filmes apenas depositados. No entanto, à medida que o tempo de oxidação térmica foi aumentado, observou-se maior incorporação de hidrogênio, o que foi atribuído à formação de defeitos no filme de óxido susceptíveis à interação com o mesmo. O crescimento térmico por um tempo curto seguido pela deposição de SiO2 e o crescimento térmico não seguido de outro tratamento levaram a menores incorporações de D do que a deposição não seguida de outro tratamento, o que pode ser correlacionado com as melhores características elétricas observadas nessas estruturas. Outro tema abordado foi a incorporação de hidrogênio através de tratamento térmico em 2H2, com e sem a presença de um eletrodo de platina, em filmes dielétricos crescidos em atmosfera de O2, NO e via tratamento térmico sequencial nesses dois gases. Quando o crescimento térmico em O2 foi seguido de tratamento em NO, foi observada uma forte troca isotópica entre o oxigênio da fase gasosa e o oxigênio do filme de SiO2, evidenciando a alta mobilidade dos átomos de oxigênio nesses filmes. A incorporação de hidrogênio mostrou-se fortemente dependente da rota utilizada no crescimento do filme dielétrico. Sem a presença do eletrodo de platina, o crescimento do filme dielétrico direto em NO foi a rota que apresentou a maior incorporação de hidrogênio. A presença de platina, por sua vez, promoveu um aumento na incorporação de hidrogênio nos filmes dielétricos obtidos através das três rotas de crescimento. Em todos os casos, observou-se que a incorporação de hidrogênio ocorre, principalmente, na região da interface entre o filme dielétrico e o SiC. A incorporação de maiores quantidades de hidrogênio foi associada com a presença de N previamente incorporado. A atmosfera reativa utilizada no crescimento térmico dos filmes dielétricos também mostrou influência nas características elétricas das estruturas analisadas. A caracterização por curvas C-V mostrou um aumento no deslocamento da tensão de banda plana após tratamentos térmicos em 2H2, indicando o aumento e/ou formação de carga positiva. Por fim, a interação de vapor d'água em estruturas de SiO2/SiC e de SiO2/Si com filmes crescidos termicamente e tratadas em NO foi investigada. Observou-se que as estruturas SiO2/SiC que foram submetidas a tratamentos térmicos em NO apresentaram menor incorporação de hidrogênio, devido à exposição a vapor d'água. Esse efeito também foi observado em estruturas SiO2/SiC quando o pós-tratamento em NO foi substituído por um póstratamento em argônio na mesma temperatura e tempo, indicando que a temperatura de tratamento é a responsável pelas menores incorporações de hidrogênio, não a reatividade do gás empregado. / In the present work, effects of thermal treatments in water vapor, in nitric oxide, and in hydrogen in the physicochemical and in the electrical properties of dielectric films thermally grown and/or deposited by sputtering on silicon carbide were investigated. The characterization was performed using ion beam analyses before and after thermal treatments in these atmospheres. In some cases, the electrical characterization was also performed. The investigation of the incorporation and depth distribution of hydrogen and oxygen after annealing of SiO2/SiC and SiO2/Si in water vapor evidenced that there are striking differences regarding water interaction with these two structures. It was observed larger oxygen incorporation in the pre-existent SiO2 film on SiC than in the SiO2/Si, which evidences higher concentration of defects in oxide films on SiC. The incorporation of hydrogen was also larger in SiO2/SiC structures, being observed in all regions of the dielectric film. In oxide films grown on Si, however, the incorporation occurred mainly in the surface region of the oxide. The interaction of water vapor with SiO2/SiC and SiO2/Si structures, whose films were deposited by sputtering, was also investigated. A distinct incorporation was observed when comparing results from structures whose oxides were thermally grown. The incorporation of hydrogen from water vapor in structures in which SiO2 films were deposited by sputtering on SiC and on Si, occurred mainly in the SiO2/substrate interface. The oxygen depth distribution after exposure to water vapor at 800°C revealed that it was incorporated in all depths of the oxides that were deposited on both substrates, evidencing the high mobility of oxygen atoms in these oxide films. The thermal growth prior to SiO2 deposition on SiC led to the incorporation of smaller amounts of hydrogen, compared with structures with films that were only deposited. Nevertheless, as the thermal oxidation time increases, a larger incorporation of hydrogen was observed, which was attributed to the formation of defects in the oxide film that are more likely to interact with hydrogen. The thermal growth for short time followed by the deposition of SiO2 and the thermal growth not followed by any other treatment led to lower amounts of hydrogen, when compared with the deposition not followed by another treatment, which can be correlated with the improvement in the electrical characteristics observed in these structures. Another subject investigated was the incorporation of hydrogen by 2H2 anneal, with and without the presence of platinum, in dielectric films thermally grown in O2, NO, and in sequential thermal treatments in these two atmospheres. In the case of thermal growth in O2 followed by NO anneal, it was observed a notable isotopic exchange between oxygen from the gas phase and oxygen from the SiO2 film, evidencing that oxygen atoms are highly mobile in these films. The incorporation of hydrogen was showed to be highly dependent on the route employed in the dielectric film growth, being the direct growth of dielectric films in NO the one that presented larger incorporation without the presence of Pt electrode. The presence of this metal increases the incorporation of hydrogen in all dielectric films. In all cases, it was observed that the incorporation of hydrogen occurred mainly in the interface region between the dielectric film and the SiC. The incorporation of larger amounts of hydrogen was associated with the presence of N that was previously incorporated. The reactive atmosphere employed in the thermal growth of dielectric films also was observed to affect electrical characteristics in analyzed structures. The characterization by C-V measurements evidenced an increase in the flatband voltage shift after annealing in 2H2, indicating the increase and/or the formation of positive charge. Finally, the interaction of water vapor in SiO2/SiC and SiO2/Si structures with dielectric films thermally grown and annealed in NO was investigated. It was observed that SiO2/SiC structures that were submitted to NO anneal presented less hydrogen incorporation due to exposure to water vapor. This behavior was also observed in SiO2/SiC structures when the NO anneal was replaced by an annealing in Ar at the same temperature and time, indicating that the temperature of the annealing was responsible by the less incorporation of hydrogen instead of the reactivity of the gas employed.