Die vorliegende Arbeit befasst sich mit der elektronischen Struktur von Bi-Kupraten vom Normalzustand bis in den supraleitenden Zustand. Der Normalzustand von einschichtigen Bi-Kupraten wurde mittels polarisationsabhängiger XAS untersucht. Es konnte eine deutliche Polarisationsabhängigkeit der CuL3- und OK-Kante innerhalb der Kupferoxidebene beobachtet werden. Insbesondere in den Merkmalen, die den dotierten Löchern zugeordnet werden. Die Winkelabhängigkeit geht über die erwartete Hybridisierung von Cu3dx^2-y^2- und O2px,y-Orbitalen hinaus, und unterstützt somit Theorien, die auch Orbitale ausserhalb der Kupferoxidebene zur Beschreibung der elektronischen Struktur einbeziehen. Desweiteren wurde beobachtet, dass die Ladungs-Transfer-Lücke sich mit steigender Lochkonzentration vergrößert konform zu Theorien zum Zusammenbruch der Zhang-Rice-Singuletts im überdotierten Bereich. Mittels ARPES wurden die Anregungen nahe der Fermikante in antinodaler Richtung an zweischichtigen Bi-Kupraten untersucht. Die komplexe Linienform im zweischichtigen Bi-Kuprat, die aus Interlageneffekten resultiert, wurde durch die gezielte Ausnutzung von Matrixelementeffekten vereinfacht. Dadurch konnten, in Kombination mit der spezifischen Ausrichtung der Polarisation, vorherige, sich scheinbar widersprechende Beobachtungen am einschichtigen und zweischichtigen Bi-Kuprat in Einklang gebracht werden. Es konnte gezeigt werden, dass im zweischichtigen Bi-Kuprat eine Anregung zusätzlich zum bindenden und antibindenden Band existiert, welche mit dem antibindenden Band korreliert zu sein scheint. Außerdem zeigt es Gemeinsamkeiten mit dem scharfen Peak, der im einschichtigen Bi-Kuprat gefunden wurde. So besteht es über die supraleitende Sprungtemperatur Tc hinaus, und verschwindet vermutlich bei oder über der Pseudolücken-Temperatur T*. Die ARPES Messungen lassen sich am Besten innerhalb des Modells elektronischer Inhomogenitäten erklären, welches Hochtemperatursupraleitung aus Streifen ableitet. / The electronic structure of Bi cuprates from the normal state down to the superconducting state has been investigated. The normal state electronic structure is probed by polarization dependent XAS on single layer Bi cuprates. With the x-ray beam being incident normal to the CuO2 plane the azimuthal angle was varied to explore the polarization effects on orbitals within the plane. In the CuL3- as well as the OK-edge spectra, the spectral features related to the doped holes showed a distinct polarization dependence within the CuO2 plane. The revealed polarization dependence is more complex than expected from hybridization of Cu3dx^2-y^2 and O2px,y orbitals only. Thus, the results support the inclusion of out-of-plane orbitals into the description of the electronic structure as has been previously theoretically proposed. Furthermore, the charge transfer gap has been observed to rise with rising hole concentration supporting theories of the instability of Zhang-Rice-singlets in the overdoped regime. By ARPES the excitations close to the Fermi surface in the antinodal region of double layer Bi cuprates have been investigated. The complex lineshape in double layer Bi cuprates that results from interlayer effects has been disentangled by exploiting matrix element effects. In combination with distinct polarization settings this enabled to unify seemingly inconsistent observations made on single and double layer Bi cuprates. The existence of an excitation additional to antibonding and bonding band could be shown in the double layer Bi cuprate. This additional excitation is probably connected to the antibonding band. It furthermore shows similarities to the sharp peak observed in single layer Bi cuprates. It persists to temperatures above the superconducting temperature Tc, and presumably vanishes at or above the pseudogap temperature T*. The ARPES results could be best explained within the model of electronic inhomogeneity which derives superconductivity from stripes.

Um neue Halbleiter-Bauelemente zu entwickeln und die Effizienz bereits existierender zu verbessern, müssen neue Materialien erkundet und untersucht werden. Für Anwendungen in Hochleistungselektronik und UV-Optoelektronik ist Ga2O3 mit seiner ultra-weiten Bandlücke von 4.8 eV ein vielversprechender Kandidat. Diese Anwendung haben zu wachsendem Interesse an seinen fundamentalen elektronischen und optischen Eigenschaften geführt. Diese Dissertation präsentiert eine umfassende ab initio-Untersuchung der elektronischen Anregungen in Ga2O3, um zu dem Verständnis dieser fundamentalen Eigenschaften beizutragen. Die Arbeit besteht aus zwei Teilen: Im ersten Teil präsentieren wir eine Vielteilchen-Störungstheorie Methode zur konsistenten Berechnung der neutralen Anregungen von Valenz- und Kernelektronen in kristallinen Halbleitern. Diese ermöglicht die präzise Berechnung von Absorptions- und Streuungsspektren vom optischen bis zum Röntgenbereich. Zusätzlich präsentieren wir einen neuartigen Ausdruck für resonante inelastische Röntgenstreuung (RIXS) innerhalb unseres Vielteilchen-Formalismus, der eine detaillierte Analyse dieser Streuung erlaubt. Mit ausgewählten Beispielen demonstrieren wir das Potential unserer Implementation, die Spektren dieser verschiedenen spektroskopischen Methoden zu berechnen, zu analysieren und zu interpretieren. Im zweiten Teil der Dissertation verwenden wir unsere Methode, um die Anregungen der Valenzelektronen, sowie der Ga 1s-, Ga 2p- und O 1s-Elektronen in Ga2O3 zu berechnen. Wir finden ausgeprägte Unterschiede in den diversen Röntgenabsorptionsspektren von Ga2O3 -Polymorphen, die von der unterschiedlichen lokalen elektronischen Struktur stammen. Wir bestimmen die Zusammensetzung der Valenz- und Kernanregungen und analysieren ihre Signatur in den verschiedenen Absorptions- und Streuungsspektren. Abschließend demonstrieren wir wie RIXS einen zusätzlichen Blickwinkel auf die Valenz- und Kernanregungen und deren Wechselwirkungen ermöglicht. / To develop new semiconductor devices and improve the performance of existing ones, the exploration and understanding of novel materials is required. With an ultra-wide band gap of around 4.8 eV, Ga2O3 is a promising candidate for applications in UV-optoelectronics and power electronics. These applications have led to an increasing interest in its fundamental electronic and optical properties. In this thesis, we present a comprehensive first-principles study of the electronic excitations of Ga2O3 to contribute to the understanding of these fundamental properties. The thesis consists of two parts: In the first part, we present an all-electron many-body perturbation theory (MBPT) approach for consistent calculations of neutral core and valence excitations. It enables accurate calculation of absorption and inelastic scattering spectra in the optical, UV, and x-ray region. While these spectroscopic techniques probe either the valence or core excitations, resonant inelastic x-ray scattering (RIXS) reveals the interplay between the two. We present a novel expression for the RIXS cross section within our all-electron many-body formalism that allows for a detailed analysis of this interplay. We demonstrate the capability of our implementation to compute, analyze, and interpret the different spectroscopic techniques with selected examples of prototypical insulators. In the second part, we apply our approach to study valence excitations, as well as excitations of various core states, i.e. the gallium 1s, gallium 2p, and oxygen 1s states in Ga2O3 . Comparing the core spectra of Ga2O3 polymorphs, we find distinct differences that originate from their local environments. We determine the composition of valence and core excitons, and analyze their signatures in the various absorption and scattering spectra. Finally, we demonstrate how RIXS can be employed to provide a different viewpoint on the core and valence excitations and unravel the interplay between them.

Die Röntgenabsorptionsspektroskopie (XAS) ist eine element-spezifische Charakterisierungs-methode, welche es erlaubt die elektronische und chemische Struktur der SEI zu untersuchen. In dieser Arbeit stelle ich ein neues Verfahren vor, das die Transmissions-XAS von Flüssigkeiten und Dünnschicht-Batterieelektroden unter in-situ Bedingungen mit weicher Röntgenstrahlung ermöglicht. Thematisch ist die Arbeit in zwei Teile gegliedert. Das neuartige Verfahren wird zunächst umfangreich vorgestellt und dann zur Untersuchung der Solid Electrolyte Interphase (SEI) auf Silizium angewendet. Das Verfahren basiert auf einer elektrochemischen Halbzelle, die mit einem Stapel aus zwei Siliziumnitrid-Membranfenster ausgestattet ist, um den Elektrolyten einzuschließen. Eines der Membranfenster ist gleichzeitig der Träger für die Dünnschicht-Siliziumanode, die Ladezyklen mit einer Kathode aus metallischem Lithium durchläuft. Nachdem sich die SEI gebildet hat, wird mittels eines Röntgenstrahls von hoher Intensität vorsätzlich eine Blase erzeugt, um überschüssigen Elektrolyten abzudrängen und einen dünnen Elektrolytfilm über der SEI zu stabilisieren. Durch den Elektrolytfilm bleibt die SEI in-situ. Das erzeugte System aus Blase, Elektrolytfilm, SEI und Siliziumanode wird dann mittels Transmissions-XAS untersucht. Im zweiten Teil meiner Arbeit werden dann Silizium Dünnschicht-Anoden mit dem vorgestellten Verfahren am Elektronenspeicherring BESSY II in Berlin untersucht. Bei der elektrochemischen Charakterisierung zeigen die Dünnschicht-anoden alle für die De-/Lithiierung von Silizium üblichen Merkmale. Als Hauptbestandteile der SEI wurden Lithiumacetat, Li Ethylendicarbonat oder -monocarbonat, Li Acetylacetonat, LiOH und LiF ermittelt. Darüber hinaus deuten Anzeichen von Aldehyden auf flüssige Einschlüsse in einer möglich-erweise porösen SEI Struktur hin. / X-ray Absorption Spectroscopy (XAS) is an element-specific technique, which allows to probe the electronic and chemical structure of the SEI. In this work, I introduce a novel approach for transmission XAS on liquids and thin-film battery electrode materials under in-situ conditions in the soft X-ray regime. Thematically, this work is divided into two parts: 1) the introduction of this novel method and 2) its application to investigate the Solid Electrolyte Interphase (SEI) on silicon thin film anodes. The presented technique is based on an electrochemical half-cell equipped with a sandwich of two silicon nitride membrane windows to encapsulate the electrolyte. One of the membranes acts as substrate for the silicon thin-film anode, which is cycled with a metallic lithium counter-electrode. After the SEI has formed, a gas bubble is intentionally introduced through radiolysis by a high intensity X-ray to push out excessive electrolyte and stabilize a thin electrolyte layer on top of the SEI, keeping it in-situ. The obtained stack comprised of bubble, electrolyte thin-layer, SEI and anode, is then probed with transmission XAS. The second part of this work utilizes the presented method to investigate the SEI on amorphous silicon anodes at the BESSY II synchrotron facility in Berlin. The anodes’ electrochemical characterization shows all significant features of silicon’s de-/lithiation. The SEI’s main components are determined as Li acetate, Li ethylene di-carbonate or Li ethylene mono-carbonate, Li acetylacetonate, LiOH, and LiF. Additionally, the evidence for aldehyde species indicates possible liquid inclusions within a presumably porous SEI morphology.

<p>In this thesis we have performed core-electron spectroscopy studies of gas phase molecular systems starting with smaller diatomic, continuing with triatomic and extending our research to more complex polyatomic ones. We can subdivide the results presented here into two categories: the first one focusing on electronic fine structure and effect of the chemical bonds on molecular core-levels and the other one dealing with nuclear dynamics induced by creation of a core hole. In our research we have mostly used synchrotron radiation based techniques such as X-ray Photoelectron (XPS), X-ray Absorption (XAS), normal and Resonant Auger (AES and RAS, respectively) and Energy-Selected Auger Electron PhotoIon COincidence (ES-AEPICO) spectroscopies.</p><p>We have demonstrated that resonant Auger spectroscopy can be used to aid interpretation of the features observed in XAS for Rydberg structures in the case of Cl₂ and C1s⁻¹π*¹ states of allene molecules. The combined use of high-resolution spectroscopy with <i>ab initio</i> calculations can help the interpretation of strongly overlapped spectral features and disentangle their complex profiles. This approach enabled us to determine the differences in the lifetimes for core-hole 2p sublevels of Cl₂ which are caused by the presence of the chemical bond. We have shown that contribution in terms of the Mulliken population of valence molecular orbitals is a determining factor for resonant enhancement of different final states and fragmentation patterns reached after resonant Auger decays in N₂O.</p><p>We have also performed a systematic study of the dependence of the C1s resonant Auger kinetic energies on the presence of different substituents in CH₃X compounds. For the first time we have studied possible isomerization reaction induced by core excitation of acetylacetone. We could observe a new spectral feature in the resonant Auger decay spectra which we interpreted as a signature of core-excitation-induced keto-enol tautomerism.</p>

Les matrices céramiques autocicatrisantes sont constituées d’une alternance de couches de SiC, B-C et Si-B-C, déposées par voie gazeuse (CVD). Les couches borées (Si)-B-C sont amorphes après élaboration et leur structure évolue à haute température (T ≥ 1000 °C). Diverses caractérisations (XRD, spectroscopie Raman, NMR, diffusion des neutrons, XANES) ont permis de préciser la structure locale des céramiques brutes d'élaboration. Celle-ci a par la suite été validée par des simulations par dynamique moléculaire ab initio. Elle est constituée de motifs icosaédriques, similaires à ceux de B4C, mais fautés et reliés entre eux par des environnements tétravalents CB4-xCx et trivalents BC3. Dans le cas des matériaux Si-B-C, cette même phase amorphe forme un continuum incluant des clusters de SiC. L’évolution structurale de ces céramiques sous atmosphère inerte a été étudiée en fonction de la température (1100°C ≤ T ≤ 1400 °C) et du temps (t ≤ 1 h). Le caractère métastable des matériaux induit une cinétique de réorganisation rapide. L'évolution structurale se traduit successivement, à T et t croissants, par l’apparition de carbone libre sp2, la cristallisation de B4C, ainsi que la croissance de nanocristallites de SiC dans les matériaux Si-B-C. Les propriétés mécaniques ont également été caractérisées à haute température à l’aide d’essais sur microcomposites Cf/(Si)-B-Cm. Les matériaux font preuve d’un comportement transitoire complexe et fortement dépendant de la température du fait de leur évolution structurale. / Self-healing matrices are composed of SiC, B-C and Si-B-C multilayers deposited by chemical vapour deposition (CVD). The boron-rich layers (Si)-B-C are amorphous in their as-deposited state but crystallize at high temperature (T ≥ 1000 °C). Various analyses (XRD, Raman spectroscopy, NMR, neutron diffraction, XANES) were used to characterize the local structure of the as-processed and heat-treated ceramics. The local structure of heat-treated ceramics was also confirmed by molecular dynamic ab initio simulations. The structure consists of icosahedral units as in B4C but faulted and connected with each other through tetrahedral CB4-XCX and trigonal BC3 sites. In Si-B-C ceramics, the same amorphous phase forms a continuum embedding SiC clusters. The structural evolution of the ceramics in inert atmosphere were studied as a function of temperature (1100°C ≤ T ≤ 1400 °C) and time (t ≤ 1 h). The metastability of the materials leads to fast kinetics of reorganization. When T and t increase, one observes successively the formation free-sp2 carbon, the crystallization of B4C and, in Si-B-C ceramics, the coarsening of the SiC nanocrystallites. The high temperature mechanical properties have also been assessed by tensile tests on Cf/(Si)-B-Cm microcomposites. The materials undergo a complex transient behaviour which is strongly temperature dependent due to the structural changes.

Ce travail contribue à mieux connaître et contraindre la minéralogie du plomb. L’incorporation du plomb dans des minéraux du manteau terrestre a été étudiée ; on observe que deux phases importantes du globe sont des candidates pour accueillir le plomb : la phase CAS dans les plaques en subduction et la phase pérovskite CaSiO3 troisième minéral majeur du manteau inférieur. D’autres minéraux du manteau supérieur ont été également étudiés pour une incorporation du plomb. Des calculs ab-initio ont été réalisés sur un composé simple de plomb, PbO2. Ces calculs permettent de mettre en évidence l’évolution de PbO2 à hautes pressions jusqu’à 130 GPa. La spéciation du plomb dans des minéraux naturels métamictes a aussi été explorée : cette étude de l’élément fils des éléments radioactifs U et Th, dans ces minéraux naturels permet de mieux contraindre l’immobilisation durable des déchets nucléaires / This work helps to better understand and constrain the mineralogy of lead. The incorporation of lead in mantle minerals has been studied, we observe that two important mineral phases of the globe are candidates to accommodate lead in their structures : the CAS phase present in subducted plates and the CaSiO3 perovskite which is the third major mineral phase of the Earth’s lower mantle. Other minerals present in the upper mantle have also been studied for the incorporation of lead. Ab-initio calculations have been performed on a simple compound of lead, PbO2. These calculations help to better constrain the evolution of PbO2 at high pressures up to 130 GPa. The speciation of lead in natural metamict minerals has also been explored : this study on lead the daughter product of radioactive U and Th in these minerals improves our knowledge of the long-term immobilization of nuclear wastes

Cette étude porte sur des oxydes TiO2, SrTiO3 et SrZrO3 déficients en oxygène ou dopés par des ions de métaux de transition. Nous avons préparé des échantillons sous forme de polycristaux, de monocristaux et de films minces. Leurs propriétés structurelles, physiques et électroniques ont été mesurées à l’aide de techniques sensibles aux volumes (diffraction des rayons X, magnétométrie SQUID, résonance paramagnétique électronique) ou sensibles aux surfaces (spectroscopie de photoémission, spectroscopie d’absorption X). Les mesures de RPE et au SQUID permettent non seulement d’obtenir leurs propriétés magnétiques mais également la valence des ions Cr dopant. Nous avons ainsi pu établir les paramètres clés qui contrôlent la valence des ions chrome lors de la synthèse. Des phases secondaires telles que SrCrO4 peuvent se former quand les échantillons sont synthétisés dans des atmosphères riches en oxygène. Les propriétés de films SrZrO3 dopés au chrome sont également discutées. Leurs conditions de préparation influencent non seulement le comportement des ions chrome mais également celui de la commutation de résistivité. Ce dernier semble dépendre de la chimie de surface des films. L’accumulation d’ions Cr3+ au voisinage de la surface fournit une interface propre exempte d’oxydes non stœchiométriques. Cette terminaison nette de l’interface a pour résultat de bonnes performances de la commutation de résistivité. / In this study, the oxygen-deficient TiO2, SrTiO3 systems and transition metal ion (Cr or V) doped TiO2, SrTiO3 and SrZrO3 systems have been investigated. We prepared samples as polycrystals, single crystals and thin films for various desires. Their structural, physical and electronic properties were measured by bulk-sensitive techniques (X-Ray Diffraction, SQUID and Electro Paramagnetic Resonance) or surface-sensitive techniques (Photoemission spectroscopy and X-ray absorption spectroscopy). The measurement of SQUID and EPR showed not only their magnetic properties but also the valence state of Cr dopant. We verified the valence state of Cr ions in oxides and found the key parameters of sample synthesis which control the valence state of Cr ions. Segregated phases such as SrCrO4 were formed when the samples were synthesized under O2 rich environment. The surface properties of Cr doped SrZrO3 films are also discussed. We found the synthesis conditions which influence on not only the behavior of Cr ions but also the resistive-switching behaviors. Various resistive-switching behaviors seem to depend on the surface chemistry of films. We found that the accumulation of Cr3+ on film surface provides a clean interface without any non-stoichiometric oxides and that this sharp interface termination results in a good performance of resistive-switching.

Made available in DSpace on 2014-12-17T15:42:27Z (GMT). No. of bitstreams: 1 WashingtonCMG_TESE.pdf: 1906631 bytes, checksum: 6b7dc12db13ffeb89c11288d55cea5a8 (MD5) Previous issue date: 2013-09-09 / Coordena??o de Aperfei?oamento de Pessoal de N?vel Superior / In this work, the structures of LaCoO3, La0,8Ba0,2CoO3 and La0,8Ca0,2CoO3 perovskites were characterized as a function of temperature (LaCoO3 structure being analyzed only at room temperature). The characterization of these materials were made by X-Ray Absorption Spectroscopy (XAS), in the cobalt K-edge, taking into account the correlated Einstein model X-ray absorption fine structure (EXAFS). The first part of the absorption spectrum corresponded the X-ray absorption near edge structure (XANES) and extended X-ray absorption fine structure (EXAFS). These materials were prepared by the combustion method. The combustion products were calcinated at 900 0C, for 6 hours in air. Noted that the sample LaCoO3 at room temperature and samples doped with Calcium and Barium in the temperature range of 50 K to 298 K showed greater distortion to monoclinic symmetry with space group I2/a. However, the sample doped with barium at the temperatures 50 K, 220 K, and 260 K showed a slight distortion to rhombohedral symmetry with space group R-3c. The La0,8Ca0, 2CoO3 structure was few sensitive to temperature variation, showing a higher local distortion in the octahedron and a higher local thermal disorder. These interpretations were in agreement with the information electronic structural on the XANES region and geometric in the EXAFS region / Neste trabalho foram investigados estruturas de perovskitas LaCoO3, La0,8Ba0,2CoO3 e La0,8Ca0,2CoO3 em fun??o de temperatura, sendo que a estrutura LaCoO3 foi analisada apenas em temperatura ambiente. As caracteriza??es destes materiais foram realizadas pela espectroscopia de absor??o de raios X (XAS) na borda K do cobalto levando em considera??o modelo de Einstein correlacionado na estrutura fina de absor??o (EXAFS). A primeira parte do espectro de absor??o de raios X corresponde absor??o de raios X pr?xima ? borda de absor??o (XANES) e a outra estende ? espectroscopia da estrutura fina de absor??o (EXAFS). Estes materiais foram preparados pelo m?todo de combust?o. Os produtos obtidos da combust?o foram tratados termicamente por 9000C por 6 horas nesses materiais. Observou que a amostra LaCoO3 em temperatura ambiente e as amostras dopadas com C?lcio e B?rio na faixa de temperatura entre 50 K a 298 K apresentaram uma maior distor??o com simetria monocl?nica com grupo espacial I2/a. No entanto, a amostra dopada com B?rio nas temperaturas 50 K, 220 K e 260 K mostrou uma leve distor??o com simetria rombo?drica com grupo espacial R-3c. A estrutura La0,8Ca0,2CoO3 foi pouco sens?vel com a varia??o de temperatura, apresentando uma maior distor??o local no octaedro e uma maior desordem t?rmica local. Estas interpreta??es est?o de acordo com as informa??es estruturais eletr?nica na regi?o XANES e geom?trica na regi?o EXAFS

Les films de nitrures métalliques nanostructurés sont généralement utilisés comme revêtements protecteurs. Ti1-xAlxN (0 ≤ x ≤ 1) peut être considéré comme un système modèle, où TiN (cubique) et AIN (hexagonal) sont partiellement miscibles. L’élaboration par dépôt physique en phase vapeur donne au film une microstructure colonnaire complexe composée de phase métastable pouvant cohabiter avec des précipités localisés aux joints de grains. Une haute dureté et une grande résistance à l’oxydation sont observées pour un maximum d’atomes de Ti substitué par des atomes de Al en réseau cubique. Les conditions de dépôt et la composition jouent un rôle majeur sur la substitution des éléments métalliques (Ti ,Al). Nous avons préparé deux séries de films déposés par pulvérisation cathodique magnétron réactive à partir de cibles TiAl compartimentées et frittées. La micro- et nanostructure des films ont été analysées par Diffraction, Spectroscopie d’Absorption des rayons X et Microscopie Electronique à Transmission. L’usure des revêtements a été étudiée par microtribologie. Nous observons pour les films riches en Ti (x < 0,5) des directions de croissances [200]c et [111]c, caractéristiques d’un réseau cubique. Tandis que, les films riches en Al (x > 0,7) présentent une croissance de domaines bien cristallisés suivant la direction [002]h du réseau hexagonal. De plus, nous avons mis en évidence l’apparition de la transition cubique / hexagonal à des teneurs en Al plus élevée pour les films issus de cible frittée. Ces films montrent une meilleure résistance à la fissuration et à l’usure que ceux déposés à partir de cible compartimentées. / Ti1-xAlxN (0 ≤ x ≤ 1) is considered as a model system, where TiN (fcc) and AlN (hcp) do not mix over the whole composition range due to their low miscibility. However, the physical vapour deposition (PVD) allows achieving metastable phases of Ti1-xAlxN, where Al atoms are partially substituting for Ti in fcc lattice. Ti1-xAlxN coatings exhibit high hardness and oxidation resistance for the maximum Al substituted to Ti in fcc lattice (about x=0.6). The proportion of grain boundaries and the limit solubility play a major role on the mechanical properties and resistance to wear of the coatings. Several techniques are employed to investigate two sets of Ti1-xAlxN thin films deposited by magnetron reactive sputtering from two types of metallic targets onto Si (100). Lattice symmetry of crystallised domains and columnar growth structure of the films are characterized by X-ray diffraction (XRD) and electron microscopy (TEM, HRTEM). Several local probes such as X-ray absorption fine structure (XAFS), diffraction anomalous fine structure (DAFS) and Electron Energy Loss Spectroscopies (EELS) which are very sensitive to the symmetry of the atomic sites either octahedral for fcc lattice or tetrahedral for hcp one are carried out. For Ti-rich films (x < 0.5), the competitive growth of cubic domains between [200]c and [111]c is observed. For Al-rich films (x > 0.7) have a domain growth well crystallized in the direction [002]h the hexagonal lattice. In addition, the cubic / hexagonal transition in Al contents higher is observed for films from sintered target. These films show better wear resistance than those deposited from target compartmentalized.

In this thesis we have performed core-electron spectroscopy studies of gas phase molecular systems starting with smaller diatomic, continuing with triatomic and extending our research to more complex polyatomic ones. We can subdivide the results presented here into two categories: the first one focusing on electronic fine structure and effect of the chemical bonds on molecular core-levels and the other one dealing with nuclear dynamics induced by creation of a core hole. In our research we have mostly used synchrotron radiation based techniques such as X-ray Photoelectron (XPS), X-ray Absorption (XAS), normal and Resonant Auger (AES and RAS, respectively) and Energy-Selected Auger Electron PhotoIon COincidence (ES-AEPICO) spectroscopies. We have demonstrated that resonant Auger spectroscopy can be used to aid interpretation of the features observed in XAS for Rydberg structures in the case of Cl2 and C1s−1π*1 states of allene molecules. The combined use of high-resolution spectroscopy with ab initio calculations can help the interpretation of strongly overlapped spectral features and disentangle their complex profiles. This approach enabled us to determine the differences in the lifetimes for core-hole 2p sublevels of Cl2 which are caused by the presence of the chemical bond. We have shown that contribution in terms of the Mulliken population of valence molecular orbitals is a determining factor for resonant enhancement of different final states and fragmentation patterns reached after resonant Auger decays in N2O. We have also performed a systematic study of the dependence of the C1s resonant Auger kinetic energies on the presence of different substituents in CH3X compounds. For the first time we have studied possible isomerization reaction induced by core excitation of acetylacetone. We could observe a new spectral feature in the resonant Auger decay spectra which we interpreted as a signature of core-excitation-induced keto-enol tautomerism.