In dieser Arbeit wird das epitaktische Wachstum von GaP/Si Heterostrukturen zur Herstellung von rauscharmen GaP/Si Nanodiodenarrays untersucht, wobei eine top-down Ätztechnik zur Herstellung der verwendeten Nanodiodenarrays genutzt wurde. Zur Untersuchung der gewachsenen Schichten wurden Röntgenstreuung (XRD), Rasterelektronenmikroskopie sowie die elektrische Charakterisierung mittels Strom-Spannungs und Kapazität-Spannungsmessungen verwendet. Zudem wurde die Grenzfläche zwischen epitaktischer Schicht und Substrat mittels Niederfrequenter Rauschspektroskopie (LFN) untersucht. Die GaP-Schichten wurden auf p-dotierten Si (100) Substraten mittels eines Riber-32P Gasquellen-Molekularstrahlepitaxiesystems gewachsen. Die Abhängigkeit der Oberflächenbeschaffenheit und Kristallqualität von denWachstumsbedingungen, wie der Wachstumstemperatur, wurden intensiv untersucht, um die Defektdichte zu minimieren. Dafür wurden nominal 500 nm dicke Heterostrukturschichten beiWachstumstemperaturen von 550 °C, 400 °C und 250 °C gewachsen, wobei 400 °C als die optimale Wachstumstemperatur bestimmt wurde. Trotzdem waren die erhaltenen Schichten aufgrund der hohen Versetzungsdichte von schlechter Qualität. Eine nur sehr geringe Qualitätsverbesserung konnte durch einen in situ durchgeführten thermischen Annealingschritt bei 500 °C für 10 Minuten erreicht werden. Daher wurde eine neue Annealingmethode vorgeschlagen, die in dieser Arbeit step-graded annealing (SGA) genannt wird. Bei dieser Methode wurde die Temperatur schrittweise von 400 °C auf 480 °C innerhalb von 90 Minuten erhöht. Dabei wurde die Oberfläche die gesamte Zeit mittels Reflexion hochenergetischer Elektronen (RHEED) untersucht. Die Oberflächenrekonstruktion, die während des Annealens mittels RHEED beobachtet wurde, zeigte schließlich eine große Verbesserung der Kristallqualität. Die Gitterparameter von GaP wurden mittels asymmetrischer XRD gemessen, wobei festgestellt wurde, dass sie exakt denen von Volumen-GaP entsprechen. Zudem wurde festgestellt, dass die GaP-Schicht automatisch n-dotiert ist und diodentypisches Gleichrichtungsverhalten aufweist. Interessante Informationen über Fallenzustände in den Heterostrukturfilmen konnten mittels LFN-Messungen gefunden werden. In einer nicht annealten Probe wurden beispielsweise zwei Fallenzustände im Bereich der Bandlücke festgestellt. In den mittels der SGA-Methode annealten Proben wurde hingegen ein rauscharmes und fallenfreies System erhalten. Anschließend wurde Elektronenstrahllithografie (EBL) zum Erstellen von Nanomustern auf der Oberfläche genutzt, die zur Herstellung von Nanodrähten genutzt werden sollen. Zur Optimierung der Elektronenstrahllithografie wurden dabei GaPSubstrate aufgrund der im Vergleich zu den epitaktischen Schichten besseren und glatteren Oberflächenstruktur genutzt. Dabei konnten in einer Goldschicht 200 nm große Löcher in einem Gitter mit hoher Dichte auf GaP erstellt und in die GaPSchicht übertragen werden. Die metallunterstütztes chemisches Ätzen (MacEtch) genannte Technik wurde kürzlich vorgeschlagen und eignet sich für die Herstellung von Nanodrähten. Die Anwendung zur Herstellung von Nanodrähten aus GaP war herausfordernd aufgrund bisher begrenzter Anwendung für III-V Halbleiter. Zur Optimierung der MacEtch Technik wurde zunächst wieder GaP-Substrat verwendet, um den Einfluss von Kristalldefekten und der Oberflächenrauigkeit auf die Ergebnisse zu minimieren. Genutzt wurde ein Gemisch aus Lösungen von HF/KMnO4 mit verschiedenen Konzentrationen. Mit den so bestimmten Prozessbedingungen konnten erfolgreich GaP Nanodrähte aus GaP-Epilayern hergestellt werden. GaP/Si Heteroübergangsnanodioden wurden anschließend unter Nutzung von Au-Ge/Ni Kontakten zu GaP-Schicht und Al/Ni Kontakten zum rückseitigen Si hergestellt. Die Transporteigenschaften des Nanodiodenarrays bestätigen die Möglichkeit, diese Arrays als elektronische NiederLärmbauelemente einzusetzen. / An epitaxial growth of GaP/Si heterostructures for the fabrication of low-noise GaP/Si nanodiode array based on nanowires is reported. The grown films were characterized using X-ray diffraction, scanning-electron microscopy, atomic-force microscopy and electrical measurements. Besides that, the interface between the epilayer and the substrate was deeply studied using a low-frequency noise (LFN) spectroscopy. The GaP epilayers were grown on p-type Si (100)substrates using gas-source molecular-beam epitaxy system. The dependence of surface morphology and crystal quality on the growth conditions was intensively investigated for minimizing the defects. The heterostructure films were grown at an optimal growth temperature of 400 °C and a nominal thickness of 500 nm. In order to improve the crystalline quality of the heterostructures, a new thermal annealing method was proposed, and referred to as step-graded annealing (SGA). In this method, the temperature was increased gradually to the annealing temperature to reduce the strain relaxation in the epilayers. A highly improvement in the crystal quality was confirmed using the SGA method. In addition, the epilayers were found to be n-type autodoped, and exhibited diode rectification behavior. Furthermore, the trap levels in the band gap, which were revealed via LFN measurements, were found to be suppressed in the annealed films. Thereafter, gold-mesh nanopatterns on the GaP surfaces were fabricated using an electron-beam lithography, as a step for the fabrication of GaP nanowires. A metal-assisted chemical etching technique with a mixture of HF:KMnO4 was carried out to fabricate GaP nanowires. GaP/Si heterojunction nanodiodes were then fabricated using an Au-Ge/Ni contact on the top of the GaP nanowires as well as an Al/Ni contact on the backside of Si. Transport properties of the nanodiode array confirmed the possibility of using the array as a low-frequency electronic device.

Das zentrale Ziel der vorliegenden Arbeit besteht einerseits darin, die Verteilung von Gd in GaN:Gd mit Gd-Konzentrationen von 10^16–10^19 cm^-3 mittels fortgeschrittener (Raster-) Transmissionselektronenmikroskopie [(S)TEM] zu bestimmen. Darauf basierend wird zum anderen das Verständnis des Mechanismus, der diese Verteilungen bewirkt, entwickelt. Wir diskutieren detailliert die Anwendung und die Grenzen von (S)TEM-Abbildungsmethoden und quantitativen Analysenmethoden und von Modellierungsmethoden, um Nano-Cluster in epitaktischen Halbleiterschichten zu beobachten und zu analysieren. Außerdem werden Fallstudien zweier Materialsysteme betrachtet, die offensichtlich Nano-Cluster aufweisen. Schließlich sind wir in der Lage, die in GaN:Gd auftretenden GdN-Cluster zu identifizieren und ihre atomare Struktur zu bestimmen. Dehnungskontrastabbildungen mit Kontrastberechnungen belegen eindeutig das Auftreten von kleinen, plättchenförmigen GdN-Clustern. Diese Cluster weisen nahezu gleiche Abmessungen auf und liegen mit der ausgedehnten Fläche parallel zu den GaN(0001)-Basalebenen. Dieses Ergebnis wird durch Dunkelfeld-STEM-Abbildungen (Z-Kontrast), bestätigt. Die starke, lokale Gitterdehnung (Verzerrungsfeld), die durch die Cluster hervorgerufen wird, ist in HRTEM-Aufnahmen abgebildet und quantitativ ausgewertet worden. Durch den Vergleich von Verzerrungsfeldern, die experimentell ermittelt worden sind, mit theroretischen Feldern schließen wir auf Cluster aus zweilagigen GdN-Plättchen mit einem Durchmesser von wenigen Gd-Atomen. Ihre interne Struktur entspricht etwa der NaCl-Phase des GdN. Dieses atomare Strukturmodell erlaubt unsere Diskussion der Energieverhältnisse der Cluster. Die Ergebnisse implizieren, dass die treibende Kraft für die beobachtete Plättchengröße ein Gleichgewicht zwischen der Zunahme von kohäsiver Energie und der Einschränkung durch die Dehnungsenergie an der Grenzfläche zwischen GdN-Cluster und GaN-Wirtsgitter aufgrund der Gitterfehlanpassung ist. / The central goal of this dissertation is (1) to clarify the distribution of Gd atoms in GaN:Gd with Gd concentration in the range between 10^16–10^19 cm^-3 by means of advanced (scanning) transmission electron microscopy [(S)TEM]; and based on that, (2) to understand the mechanisms that control such distribution. We discuss in detail the application and limitations of (S)TEM imaging and analysis techniques and modeling methods dedicated to the study of embedded nano-clusters. Besides, two case studies of semiconductor material systems that contain apparently observable nano-clusters are considered. One is about intentionally grown InAs nano-clusters embedded in Si and the other study the formation and phase transformation of Bi-containing clusters in annealed GaAsBi epilayers. Finally, we are able to identify the occurrence of GdN clusters in GaN:Gd samples and to determine their atomic structure. Strain contrast imaging in conjunction with contrast simulation unambiguously identifies the occurrence of small, platelet-shaped GdN clusters. These clusters are nearly uniform in size with their broader face parallel to the GaN (0001) basal plane. The result is confirmed by dark-field STEM Z-contrast imaging. The strong local lattice distortion (displacement field) induced by the clusters is recorded by HRTEM images and quantitatively analyzed. By comparing the displacement fields which are analyzed experimentally with these fields that are derived from energetically favored models, we conclude that the clusters are bilayer GdN with platelet diameter of only few Gd atoms; their internal structure is close to rocksalt GdN. This atomic structure model enables our discussion about the energetics of the clusters. The results indicate that the driving force for the formation of observed platelet in specific size is a compromise between the gain in cohesive energy and the penalty from interfacial strain energy due to lattice mismatch between the GdN cluster and GaN host.

A otimização de sistemas do tipo Ti-Si-X requer que os sistemas binários estejam constantemente atualizados. O sistema Ti-Si foi investigado experimentalmente desde a década de 50 e poucos estudos usaram os dados experimentais para calcular o diagrama de fases Ti-Si usando modelamento termodinâmico. A otimização mais recente do sistema Ti-Si foi realizada em 1998, descrevendo a fase Ti5Si3 como um intermetálico não estequiométrico contendo três sub-redes e mostrando a presença da fase intermetálica estequiométrica Ti3Si. Dada a recente disputa sobre a cinética de precipitação e a estabilidade das fases Ti3Si e Ti5Si3 nos sistemas Ti-Si e Ti-Si-X, o canto rico em titânio do sistema Ti-Si (estável e metaestável) foi otimizado no presente trabalho. Os limites de estabilidade de fases, os valores dos erros pelo método dos mínimos quadrados do procedimento de otimização e os desvios padrões relativos das variáveis calculadas foram discutidos para inspirar a realização de mais trabalhos experimentais para investigar as reações eutetóides estáveis e/ou metaestáveis, ?->? + Ti3Si e ?->? + + Ti5Si3; e para melhorar cada vez mais as otimizações termodinâmicas do diagrama de fases do sistema Ti-Si. / The thermodynamic optimization of Ti-Si-X systems requires that the binary systems are constantly updated. The Ti-Si system has been experimentally investigated since the 1950\'s and few investigations have used this experimental data to calculate the Ti-Si phase diagram using thermodynamic modeling. The most recent assessment of the Ti-Si system was performed in 1998, describing the Ti5Si3 phase as a non-stoichiometric intermetallic containing three sublattices and showing the presence of the stoichiometric Ti3Si phase. In the light of the dispute over the precipitation kinetics and stability of Ti3Si and Ti5Si3 phases in Ti-Si and Ti-X-Si systems, the present work assessed the Ti-rich corner of the stable (featuring Ti3Si phase) and metastable Ti-Si phase diagrams. The phase boundaries, the values of the error of the least-square method of the optimization procedure and the relative standard deviation of the calculated variables were discussed in order to inspire further experimental work to investigate the stable and/or metastable eutectoid reactions, ?->? + Ti3Si e ?->? +Ti5Si3, and to improve the thermodynamic assessments of the Ti-Si phase diagram.

Made available in DSpace on 2016-04-27T17:27:16Z (GMT). No. of bitstreams: 1 MARCELO PEREIRA DE ANDRADE.pdf: 508336 bytes, checksum: 434e112d87c90efc359ac8724acf863d (MD5) Previous issue date: 2007-01-17 / Conselho Nacional de Desenvolvimento Científico e Tecnológico / This work shows the analysis which Augustine makes in De Trinitate s tenth book about self-knowledge s process of the mens. For Augustine, the knowledge which the mens has of herself is immediate, total and indubitable. Nevertheless, he recognizes the possibility of the self-deceit and explains that it is possible due the inadequacies between self-knowledge and self-thought / Neste trabalho apresenta-se a análise que Agostinho realiza no livro décimo do De Trinitate acerca do processo do autoconhecimento da mens. Para Agostinho, o conhecimento que a mens possui de si mesma é imediato, total e indubitável. Apesar disso, ele reconhece a possibilidade do auto-engano e explica que isso é possível devido à inadequação entre conhecimento de si e pensamento de si

Dans le cadre d'un programme de recherche visant à l'allègement de la structure des véhicules, l'origine de lignage dans des tôles en aluminium AA6016 a été étudiée. Ce phénomène, qui peut apparaître à la suite d'une déformation plastique, est apparenté à de la rugosité de surface alignée dans la direction de laminage (DL). Sa présence est néfaste à une bonne finition de surface, et son intensité est appréciée visuellement par les fabricants.Une méthode de quantification rationnelle a été développée. La caractérisation de la distribution morphologique des motifs de rugosité a été rendue possible par l'utilisation de fonctions fréquentielles telle la densité de puissance spectrale. La note globale, construite à partir de la quantification individuelle des composantes de lignage pur et de rugosité globulaire, s'est montrée en bon accord avec les estimations visuelles, et notamment avec le niveau de lignage intermédiaire regroupant plusieurs aspects de surface différents.La microstructure des matériaux à l'état T4 a été expérimentalement mesurée couche de grains par couche de grain à l'aide d'un couplage entre polissage contrôle et acquisition par EBSD. Les 4 à 5 premières couches sous la surface (-120μm) semblent jouer un rôle mécanique prépondérant dans la formation du lignage car elles offrent à la fois une grande taille de grains moyenne, une importante ségrégation d'orientations cristallines, et une forte similitude de longueurs d'onde entre la rugosité de surface et les motifs de la microtexture.Des simulations numériques ont permis de vérifier que les couples de texture identifiés (Cube/Goss, Cube/Aléatoire et Cube/CT18DN) possédaient des différences d'amincissements hors-plans suffisantes pour générer l'ondulation d'une couche d'éléments. En revanche, l'influence mécanique de cette même couche décroit très rapidement avec son enfouissement dans la profondeur et devient négligeable sous plus de 4 couches d'éléments. / As part of a project on aluminium alloys for vehicle weight reduction, the origins of roping in AA6016 aluminium sheets have been studied. This strain-induced phenomenon is related to surface roughness but involves narrow alignments along rolling direction (RD). Its lowers the surface quality, and its intensity is visually evaluated by vehicle manufacturers.An original quantification method is proposed. The morphological characterization of roughness features has been measured by using frequency functions such as the areal power spectral density. The overall roping quality mark, determined from quantifications of both the isotropic and unidirectional components, shows good agreement with the visual assessment, especially for the intermediate roping levels which exhibit several different surface appearances.The material microtexture has been experimentally measured through grain to grain layers by using serial sectioning and EBSD scans. The first 4 to 5 layers under the surface (-120μm) seem to play a leading role in the micromechanics of roping developpment since they simultaneously exhibit a high average grain size, significant segregation of crystallographic orientations, and a close similitude between surface roughness and microstructural feature wavelenghts.Numerical simulations verified that the identified texture pairs (Cube/Goss, Cube/Random and Cube/CT18DN) have sufficient out-of-plane strain difference to promote one element thick layer undulations. But, the mechanical influence of this layer decreases gradually with depth, and becomes negligible below 4 other layers.

Estudamos neste trabalho o comportamento da impureza oxigênio em rede cristalina de silício, usando primeiramente o método INDO (lntermediate Neglect of Differential Overlap) com parametrização espectroscópica e incluímos os efeitos de muitos elétrons via Método CI-(Interacão de Configuração). Fazemos uma análise sobre as possíveis origens do posicionamento não-central (off-center) dessa impureza, - se decorrente de uma distorsão Pseudo Jahn-Teller: - se originária de um CR Reconstrução Química. Quando o átomo de Oxigênio é deslocado ao longo da direção [100] ocupa um sitio de mínimo absoluto. O oxigênio introduz no gap de banda um orbital anti-ligante de simetria a1 totalmente ocupado, situação semelhante à dos anti-sitios em materiais semi-condutores III-V. Estudamos também o comportamento dessa impureza quando a mesma é deslocada ao longo da direção [111], verificando que é criada uma posição de Instabilidade mas, os auto-valores têm comportamento não esperado para orbitais anti-ligantes. / In this work we studied the Oxygen impurity in Silicon. The calculations were performed using a semi-empirical method (INDO/S) with Configuration Interaction to account for many-electron effects. We analyse the origin of the off-center position for substitutional oxygen. Pseudo Jahn-Teller distortion or Chemical Rebonding effects. The oxygen introduces an a1 anti-bonding state in the forbidden band-gap similar to anti-site defects in III-V materials. To answer the question about distortion, we also studied oxygen dislocation in the (111) direction and we obtained a metastable state but his eigen-value has a non-expected behavior for anti-bonding orbitals.

Submitted by Filipe dos Santos (fsantos@pucsp.br) on 2017-12-12T11:31:14Z No. of bitstreams: 1 Rita de Cassia Goulart Caraseni.pdf: 1273719 bytes, checksum: 6cf2f6ad710fcbf99ecc0abee66423b8 (MD5) / Made available in DSpace on 2017-12-12T11:31:14Z (GMT). No. of bitstreams: 1 Rita de Cassia Goulart Caraseni.pdf: 1273719 bytes, checksum: 6cf2f6ad710fcbf99ecc0abee66423b8 (MD5) Previous issue date: 2017-11-29 / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior - CAPES / Fundação São Paulo - FUNDASP / This research had as a general objective, to elaborate a study on the compassion category and how it presents itself in the thought of Pope Francisco, especially in the Encyclical Laudato Si'. We had as specific objectives: to characterize the category by relating it to elements identified in the encyclical, investigate and discuss how the category is present in the thought of Francisco and identifying the main meanings of the category in the Encyclical Laudato Si'. The theme of this dissertation arose from the desire to carry out research that treated compassion as a principle to be studied for its relevance in the process of maturing the human being in its relations. As a hypothesis of the research, we consider that the compassion category is expressed in an underlying way throughout the text of the Encyclical, through the use of elements of the category present in the text and also in the interlinkages of the main meanings of the category: anthropological, ecological and theological. The methodological approach used to compose this study was based on bibliographical and documentary research. We looked for authors who representing the state of the art about what was being researched and who presenting a discussion model that was closer to our intention of placing the compassion category in a social and global context, using it as a key to reading. As a result of the research, we note that through compassion, the human being is recognized within life, since this principle is capable of eliminating boundaries, creating bonds of brotherhood and building bridges of accessibility / Esta pesquisa teve como objetivo geral, elaborar um estudo sobre a categoria compaixão e como ela se apresenta no pensamento do Papa Francisco, especialmente na encíclica Laudato Si’. Tivemos como objetivos específicos: caracterizar a categoria relacionando-a com elementos identificados na encíclica, investigar e debater como a categoria se faz presente no pensamento de Francisco e identificar os principais significados da categoria na encíclica Laudato Si’. O tema dessa dissertação surgiu da vontade de realizar uma pesquisa que tratasse a compaixão como um princípio a ser estudado por sua relevância no processo de amadurecimento do ser humano em suas relações. Como hipótese da pesquisa, consideramos que a categoria compaixão vem expressa de forma subjacente ao longo de todo o texto da encíclica, através do uso de elementos da categoria presentes no texto e também nas interligações dos principais significados da categoria: antropológico, ecológico e teológico. O enfoque metodológico utilizado para compor esse estudo, partiu de pesquisa bibliográfica e documental. Buscamos autores que representassem o estado da arte e que apresentassem um modelo de discussão que mais se aproximasse da nossa intenção de colocar a categoria compaixão em um contexto social e global, utilizando-a como chave de leitura. Como resultado da pesquisa, observamos que através da compaixão, o ser humano se reconhece dentro da vida, uma vez que esse princípio é capaz de eliminar fronteiras, criar laços de irmandade e erguer pontes de acessibilidade

La micro fusion laser d'un lit de poudre (SLM) permet la réalisation de pièces complexes avec des microstructuresfines. Cette technologie présente de nombreux avantages mais se heurte encore à une faible disponibilité des poudres d'alliages. En SLM, la pièce est d'abord conçue par CAO (conception assistée par ordinateur), puis construite couche par couche avec un faisceau laser commandé par un ordinateur. Dans ce cadre, le travail effectué dans cette thèse a consisté à étudier et à développer une nouvelle méthode pour réaliser des pièces en alliages et en composites à partir de mélanges de poudres élémentaires, ouvrant ainsi la voie à une grande variété de compositions.Au niveau expérimental le choix s'est porté sur le système aluminium-silicium avec différentes teneurs en silicium (12, 18 et 50% en poids). L'effet de l'ajout d'un champ magnétique statique a aussi été proposé comme un outil supplémentaire de contrôle de la microstructure.Dans le processus de fabrication de pièces par SLM la puissance du laser et la vitesse de balayage déterminent au premier chef la densité, la microstructure, la composition des phases et les propriétés mécaniques du produit. Une analyse systématique de l'effet de ces paramètres sur l'alliage Al - Si fabriqué par SLM à partir de mélanges de poudres est présentée. Des alliages ont été ainsi obtenus pour plusieurs domaines de composition visés correspondant à des applications pratiques (structures légères, système tribologique, emballage électronique, ...).Les microstructures fines obtenues grâce à la solidification rapide des matériaux fondus conduit à des propriétés quise comparent de façon favorable à celles obtenues avec les techniques classiques d'élaboration et de mise en oeuvre. / As a new manufacturing technology, Selective laser melting (SLM) has a large potential in the manufacturing of complex parts with ultrafine microstructure.Selective laser melting has many significant advantages over traditional manufacturing methods but still faces a low availability of powder materials. With SLM, the part is firstly designed via 3D computer-aided design (CAD)), then built layer-by-layer with a high energy computer-controlled laser beam The work done in this study was therefore aiming at developing a new way to obtain alloys and composites directly from elemental powder mixtures with a large composition flexibility.Experimentally the choice was made of the aluminum-silicon system with several silicon contents (12, 18, 50 wt. %).Adding a static magnetic field was also considered as an additional way to control the microstructure. When parts are manufactured by SLM, laser power and scanning speed are the main parameters determining the density, microstructure, phase composition and mechanical properties. A systematic analysis of the role of these parameter on the manufacturing of Al - Si alloys by SLM from mixtures of powders was therefore conducted. Al - Si alloys with a very fine microstructure were thus obtained for several composition ranges corresponding to practical applications (lightweight structures, high wear resistance alloys, electronic packaging material, ...). The properties of the materials obtained in this way, according to the performed characterizations, compares favorably with those obtained via the conventional production technologies.

Metal-Oxide-Silicon Field-Effect-Transistors with a layer of electrically isolated Si nanocrystals (NCs) embedded in the gate oxide are known to improve conventional floating gate flash memories. Data retention, program and erase speeds as well as the memory operation voltages can be substantially improved due to the discrete charge storage in the isolated Si NCs. Using ion beam synthesis, Si NCs can be fabricated along with standard CMOS processing. The optimization of the location and size of ion beam synthesized Si NCs requires a deeper understanding of the mechanisms involved, which determine (i) the built-up of Si supersaturation by high-fluence ion implantation and (ii) NC formation by phase separation. For that aim, process simulations have been conducted that address both aspects on a fundamental level and, on the other hand, are able to avoid tedious experiments. The built-up of a Si supersaturation by high-fluence ion implantation were studied using dynamic binary collision calculations with TRIDYN and have lead to a prediction of Si excess depth profiles in thin gate oxides of a remarkable quality. These simulations include in a natural manner high fluence implantation effects as target erosion by sputtering, target swelling and ion beam mixing. The second stage of ion beam synthesis is modeled with the help of a tailored kinetic Monte Carlo code that combines a detailed kinetic description of phase separation on atomic level with the required degree of abstraction that is necessary to span the timescales involved. Large ensembles of Si NCs were simulated reaching the late stages of NC formation and dissolution at simulation sizes that allowed a direct comparison with experimental studies, e.g. with electron energy loss resolved TEM investigations. These comparisons reveal a nice degree of agreement, e.g. in terms of predicted and observed precipitate morphologies for different ion fluences. However, they also point clearly onto impact of additional external influences as, e.g., the oxidation of implanted Si by absorbed humidity, which was identified with the help of these process simulations. Moreover, these simulations are utilized as a general tool to identify optimum processing regimes for a tailored Si NC formation for NC memories. It is shown that key properties for NC memories as the tunneling distance from the transistor channel to the Si NCs, the NC morphology, size and density can be adjusted accurately despite of the involved degree of self-organization. Furthermore, possible lateral electron tunneling between neighboring Si NCs is evaluated on the basis of the performed kinetic Monte Carlo simulations.

Zusammenfassung: Die vorliegende Arbeit lässt sich thematisch in drei Bereiche gliedern. Der erste Teil handelt von der Synthese stark elektronenziehender Ligandensysteme und deren Umsetzung zu Metallocendichloriden. Es zeigt sich, dass die Umsetzung von pentafluorbenzolhaltigem Cyclopentadien, Inden oder Fluoren mit Silizium-Verbindungen nicht zu der gewünschten Reaktion zu Si-verbrücken Systemen führen, sondern, dass sich andersartige Si-F-Moleküle bilden. Zugängliche, unverbrückte Komplexe zeigen im besonderen eine geringe Stabilität im Vergleich zu ’nicht-C6F5-haltigen’ Metallocenen. Die Hauptthematik der Arbeit beschäftigt sich mit der Synthese von in 2-Position funktionalisierter sowie verbrückter Indene und deren Umsetzung zu Metallocenkomplexen. Hierbei interessiert vor allem der sterische Einfluss der am Ligandensystem sitzenden Gruppen. Die Darstellung der Inden-2-verbrückten Indene erstreckt sich über eine Bromaddition, thermodynamische Freisetzung von HBr, Grignard-Reaktion und anschließender Brückenbildung mit Cyclopentadien- und tert.Butylamineinheiten. Weiterer Bestandteil dieses Abschnitts ist die Umsetzung der synthetisierten Moleküle zu Metallocenverbindungen. Dabei werden auf diesem Wege Sandwich- bzw. Halbsandwich-Komplexe in guter Ausbeute erhalten. Der dritte Bereich beschäftigt sich mit der Umsetzung von Titan-4-chlorid gegenüber unterschiedlichern Trimethylsilyl-substituierten Indenen. Durch Substitution eines Chloratoms durch eine Phenolatgruppe erhält man die Indenyldichlortitanphenolate.