Optical devices based on planar lightwave circuit (PLC) technology have the advantages of small size, high reliability, possibility for large scale production, and potential integration with electronics. These devices are widely employed in optical telecommunications, sensing, data storage, imaging, and signal processing. This thesis focuses on some selected PLC based devices, such as power splitters, demultiplexers, triplexers and polarization beam splitters. First, the basic principle of the waveguides and the simulation methods for PLC devices are discussed. A novel effective index method is introduced to reduce a two-dimensional structure to a one-dimensional one, and can be implemented for arbitrarily shaped waveguides. Numerical methods, such as finite-difference mode solver, beam propagation method, finite-difference time-domain method are introduced to analysis the mode profile of the waveguides, and the propagation properties of light in PLC devices. Multimode interference (MMI) couplers are widely used in many PLCs, such as power splitters, ring lasers, optical switches, and wavelength division multiplexers/demultiplexers. In this work, concepts for improving the self-imaging quality of MMI couplers are analyzed and new designs are proposed. A significant improvement in performance together with compact sizes were obtained with taper sections at the input/output of MMI couplers based on SOI, and deeply etched ridges in MMI couplers based on SiO2. A polarization insensitive dual wavelength demultiplexer based on sandwiched MMI waveguides was presented. Novel devices including triplexers and polarization beam splitters were realized by using photonic crystal (PhC) structures. Two stages of directional couplers based on PhC waveguides are cascaded to form an ultracompact triplexer. The special decoupling property of the PhC waveguide based directional coupler was utilized in the design. A novel polarization beam splitter was realized by combining a MMI coupler and a PhC which works as a polarization sensitive reflector. Finally, fabrication and optical characterization of an ultra-compact directional coupler and PhC structures in InP are presented. In a single etching step, by using the lag-effect in inductively coupled plasma reactive ion etching, a compact directional coupler (55 μm) is demonstrated. Carrier life times in PhC structures etched by chemically assisted ion beam etching were investigated, for emitter and switching applications. / QC 20100909

This thesis treats the development of packaging and integration methods for the cost-efficient encapsulation and packaging of microelectromechanical (MEMS) devices. The packaging of MEMS devices is often more costly than the device itself, partly because the packaging can be crucial for the performance of the device. For devices which contain liquids or needs to be enclosed in a vacuum, the packaging can account for up to 80% of the total cost of the device. The first part of this thesis presents the integration scheme for an optical dye thin film NO2-gas sensor, designed using cost-efficient implementations of wafer-scale methods. This work includes design and fabrication of photonic subcomponents in addition to the main effort of integration and packaging of the dye-film. A specific proof of concept target was for NO2 monitoring in a car tunnel. The second part of this thesis deals with the wafer-scale packaging methods developed for the sensing device. The developed packaging method, based on low-temperature plastic deformation of gold sealing structures, is further demonstrated as a generic method for other hermetic liquid and vacuum packaging applications. In the developed packaging methods, the mechanically squeezed gold sealing material is both electroplated microstruc- tures and wire bonded stud bumps. The electroplated rings act like a more hermetic version of rubber sealing rings while compressed in conjunction with a cavity forming wafer bonding process. The stud bump sealing processes is on the other hand applied on completed cavities with narrow access ports, to seal either a vacuum or liquid inside the cavities at room temperature. Additionally, the resulting hermeticity of primarily the vacuum sealing methods is thoroughly investigated. Two of the sealing methods presented require permanent mechanical fixation in order to complete the packaging process. Two solutions to this problem are presented in this thesis. First, a more traditional wafer bonding method using tin-soldering is demonstrated. Second, a novel full-wafer epoxy underfill-process using a microfluidic distribution network is demonstrated using a room temperature process. / <p>QC 20130325</p>

Phase shifters are common microwave circuit devices, which are widely used in telecommunication and radar applications, microwave measurement systems, and many other industrial applications. They are key circuits of T/R modules and are used to form the main beam of the electronically scanned phase array antennas. Wideband operating range is an important criterion for EW applications. Hence, wideband performance of the phase shifter is also important. In this study, four wideband phase shifter circuits are designed, fabricated and measured for 6-18 GHz frequency range. Phase shifters are separately designed in order to get 11.25, 22.5, 45 and 90&ordm / phase shifts with minimum phase error and low return losses. Phase shifter circuits are designed and fabricated in microstrip structure onto two different substrates as Rogers TMM10i and Alumina using printed circuit board and thin film production techniques, respectively. Also phase shifter circuits that include microstrip spiral inductors for DC biasing are designed and fabricated using thin film production technique. For each design the fabricated circuits are measured and results are compared with simulation results in the content of this thesis. Circuit designs and EM simulations are performed by using ADS2008&reg / , Sonnet&reg / , and CST&reg / .

The servo mechatronic system design process usually covers two different engineering domains: structure design and system control. The relationship between these two domains is much closed. In order to reduce the disturbance caused by parameters in either one, the domain knowledge from those two different fields needs to be integrated. Thus, in order to reduce the disturbance caused by parameters in either one, the mechanical and controller design domains need to be integrated. Therefore, the integrated design method Design For Control (DFC), will be employed in this thesis. In this connect, it is not only applied to achieve minimal power consumption but also enhance structural performance and system response at same time. To investigate for the integrated design method, there are two common servo mechatronic systems: feed drive system and legged servo mechatronic system are used as the design platform. 1. Mechatronic Feed Drive System To investigate the method for integrated optimization, a mechatronic feed drive system of the machine tools is used as a design platform. The 3D software, Pro/Engineer is first used to build the 3D model to analyze and design structure parameters such as elastic deformation, nature frequency and component size, based on their effects and sensitivities to the structure. Additionally, in order to achieve system robust, Quantitative Feedback Theory (QFT), will be applied to determine proper control parameters for the controller. Therefore, overall physical properties of the machine tool will be obtained in the initial stage. Following this Design Then Control process, the iterative design process is following to enhance some of system performance. Finally, the technology design for control will be carried out to modify the structural and control parameters to achieve overall system performance. Hence, the corresponding productivity is expected to be greatly improved. 2. Legged Servo Mechatronic System The goal of this study is to develop a one-degree-of-freedom (DOF) legged servo mechatronic system with DFC. For this system, the kinematics and control dynamic analysis of legged servo mechatronic system have been solved by using four bar linkage with symmetrical coupler point, pantograph, and common position and velocity controller. In addition, in order to improvement system dynamic performance and reduce the control cost, the counterweight, that base on mass redistribution is employed to integrate structure and control into one design step for reduce shaking moment. Additionally, in order to improvement the system performance, the complete force balance is not only to take advantage of control cost, but also easy to control.

Large on-chip bandwidths required for high performance electronic chips will render optical components essential parts of future on-chip interconnects. Silicon photonics enables highly integrated photonic integrated circuit (PIC) using CMOS compatible process. In order to maximize the bandwidth density and design flexibility of PICs, vertical integration of electronic layers and photonics layers is strongly preferred. Comparing deposited silicon, single crystalline silicon offers low material absorption loss and high carrier mobility, which are ideal for multi-layer silicon PIC. Three different methods to build multi-layer silicon PICs based on single crystalline silicon are demonstrated in this dissertation, including double-bonded silicon-on-insulator (SOI) wafers, transfer printed silicon nanomembranes, and adhesively bonded silicon nanomembranes. 1-to-12 waveguide fanouts using multimode interference (MMI) couplers were designed, fabricated and characterized on both double-bonded SOI and transfer printed silicon nanomembrane, and the results show comparable performance to similar devices fabricated on SOI. However, both of these two methods have their limitations in optical interconnects applications. Large and defect-free silicon nanomembrane fabricated using adhesive bonding is identified as a promising solution to build multi-layer silicon PICs. A double-layer structure constituted of vertically integrated silicon nanomembranes was demonstrated. Subwavelength length based fiber-to-chip grating couplers were used to couple light into this new platform. Three basic building blocks of silicon photonics were designed, fabricated and characterized, including 1) inter-layer grating coupler based on subwavelength nanostructure, which has efficiency of 6.0 dB and 3 dB bandwidth of 41 nm, for light coupling between layers, 2) 1-to-32 H-tree optical distribution, which has excess loss of 2.2 dB, output uniformity of 0.72 dB and 3 dB bandwidth of 880 GHz, 3) waveguide crossing utilizing index-engineered MMI coupler, which has crossing loss of 0.019 dB, cross talk lower than -40 dB and wide transmission spectrum covering C-band and L-band. The demonstrated integration method and silicon photonic devices can be integrated into the CMOS back-end process for clock distribution and global signaling. / text

This thesis focuses mostly on investigating different potential applications of meta-transmission line (TL), particularly composite right/left handed (CRLH) TL, and analyzing some new phenomena and applications of meta-TL, mostly left-handed (LH) TL. Realization principle will also be studied.   First, the fundamental electromagnetic properties of propagation in the presence of left-handed material (LHM) are illustrated. The transmission line approach for LHM design is described together with a brief review of the transmission line theory. As a generalized model for LHM TL, CRLH TL provides very unique phase response, such as dual-band operation, bandwidth enhancement, nonlinear dispersion, and the existence of critical frequency with zero phase velocity. Based on these properties, some novel applications of the existing CRLH transmission lines are then given, including a notch filter, a diplexer, a broadband phase shifter, a broadband balun, and a dual band rat-ring coupler. In the design of notch filters and diplexers, CRLH TL shunt stub is utilized to provide high frequency selectivity due to the existence of critical frequency with zero phase velocity. The proposed wideband Wilkinson balun, which comprises of one section of conventional transmission lines and one section of CRLH-TL, is shown to have a 180°±10° bandwidth of 2.12 GHz centered at 1.5 GHz. In the analysis of the dual band rat-ring couplers, a generalized formulation of the requirements about impedances and electrical length of the branches are derived, and as an example, a compact dual-band rat-race coupler is designed utilizing the balanced CRLH TL. Furthermore, a low pass filter is also proposed and designed based on a single (epsilon) negative coplanar waveguide (CPW).Various principles to realize meta-transmission lines are investigated. The main conclusions are listed below:Ÿ         Dual composite right/left handed (D-CRLH) transmission line, which is the dual structure of conventional CRLH TL, shows opposite handedness in the high frequencies and low frequencies with CRLH TL. Meanwhile, in the practical implementation, D-CRLH TL always shows a sharp stopband. A notch filter and a dual-band balun are designed based on D-CRLH TL. Ÿ         The lattice type transmission line (LT-TL) shows the same magnitude response with the conventional right-handed (RH) TL, but a constant phase difference in the phase response over a wide frequency band. A wideband rat-race coupler is proposed as an application of the LT-TL. Ÿ         Finger-shorted interdigital capacitors (FSIDCs) are analyzed and it is shown that FSIDC alone can act as a left-handed transmission line. The value of the reactive elements (inductors and capacitors) in the equivalent circuit model is determined by the dimensions of FSIDC. The relationship between them is analyzed.Later, transmission line loaded with negative-impedance-converted inductors and capacitors is illustrated as the first non-dispersive LH transmission line. The design of a negative series impedance converter is given in detail and a wideband power divider is designed as a potential application of the newly proposed meta-transmission lines in is also given. The final part of the thesis focuses on the study of microstrip lines loaded with complementary split ring resonators (SRRs). An equivalent circuit is made for this structure. The circuit model is verified by the experimental results of cases with different periodic lengths. Thereafter, a meander line split ring resonator (MLSRR) is presented. It shows dual band property and the miniature prototypes of complementary MLSRR loaded transmission lines are fabricated. By comparing the resonance frequencies of complementary MLSRR and multiple SRR, it is shown that the complementary MLSRR is very compact. C-MLSRR is applied in rejecting unnecessary frequencies in the ultra wideband antennas. / QC 20100720

Ces dernières années, la photonique sur silicium est apparue comme une solution prometteuse pour la fabrication en grande série d'émetteurs-récepteurs optiques répondant aux besoins des centres de données en termes d'augmentation du débit et de coûts réduits. Plusieurs plateformes de photonique sur silicium ont été démontrées en utilisant la technologie Si standard. Bien que ces plateformes diffèrent à bien des égards, elles manquent toutes d'une source de lumière intégrée monolithiquement. Pour résoudre ce problème, l'approche la plus couramment proposée consiste à coller un empilement InP sur une plaque SOI afin de fabriquer un laser hybride III-V/Si. Cependant, aucune des démonstrations n'a été réalisée avec un empilement d’interconnexions métalliques BEOL (Back-End Of Line) standard, empêchant ainsi une intégration électronique-photonique appropriée. Pour résoudre le problème topographique posé par cet ajout de couches, un nouveau schéma d'intégration, appelé intégration Back-Side, a été développé et est présenté dans ce document.Tout d'abord, le contexte de cette étude, un état de l’art ainsi que la présentation du Back-Side est abordé. La nouveauté apportée par cette intégration, à savoir le collage du III-V sur la face arrière du SOI après la structuration de celui-ci, y est alors détaillé.Le bon fonctionnement d’un élément essentiel à la puce photonique, le réseau de couplage, est ensuite abordé à travers des simulations, sa fabrication et des caractérisations optiques. Nous avons prouvé que, sous certaines conditions, ce dispositif possède les mêmes performances mesurées en Back-Side qu’en Front-Side.Le principe de fonctionnement d’une cavité oscillante puis les différents modules composants le laser hybride sont détaillés. Le laser étudié est une cavité hybride DBR (Distributed Bragg Reflector) III-V/Si. Afin d'augmenter le confinement du mode dans le MQWs (Multi Quantum Wells) et donc d'assurer un gain optique élevé, le mode optique est progressivement transféré entre le guide III-V et le guide silicium du laser hybride par des épanouisseurs adiabatiques, structurés dans le SOI de part et d’autre de la zone de gain, pour être enfin réfléchi par les miroirs DBR dans le silicium.Enfin, son processus de fabrication est explicité avant que ses caractérisations opto-électroniques ne soient finalement présentées. Les lasers à pompage électrique ont été testés dans des conditions de courant continu et la lumière générée a été collectée à travers un réseau de couplage par une fibre optique externe multimode. Les pertes de couplage ont été mesurées supérieures à 10 dB. La puissance de sortie est de 1,15 mW à un courant d'injection de 200 mA. Le seuil laser est de 45 mA, ce qui correspond à une densité de courant de 1,5 kA / cm2 et la résistance série des contacts laser est d'environ 9 Ω. La tension de seuil est de 1,45 V. Les spectres lasers reflètent un fonctionnement mono-fréquence, pour différents courants d'injection, avec une longueur d'onde centrale correspondant à la longueur d’onde de Bragg des miroirs. Un SMSR (Side Mode Suppression Ratio) de plus de 35 dB a été mesuré, ce qui prouve la bonne pureté spectrale de ce laser. Un décalage de la longueur d'onde de 4 nm a été observé en injectant un courant de 20 mA dans des chaufferettes métalliques au-dessus des DBRs.L'intégration monolithique d'un laser DBR hybride en face arrière d'une plaque SOI, entièrement compatible CMOS, a été démontrée pour la première fois, la mise en place d'interconnexions électriques compatibles CMOS et de sources optiques sur une même puce a pu être réalisée. Ce dispositif ouvre la voie à un émetteur-récepteur optique entièrement intégré sur une plateforme Si. / Recently, Silicon Photonics has emerged as a solution for the mass manufacturing of optical transceivers addressing datacenter’s needs in terms of increasing data-rate and reduced cost. Several Silicon-Photonics platforms have been demonstrated using standard Si technology. While these platforms differ in many regards, they all lack a solution for a monolithically integrated light source. To solve this problem, the most commonly proposed approach consists in bonding an InP-stack onto a Si-wafer in order to fabricate a Hybrid III-V/Si laser. However, none of those demonstrations have been made with a standard CMOS-BEOL, preventing a proper electronic-photonic integration. To solve the topographical problem induced by the additional layers, a new integration scheme, called Back-Side, has been developed and is presented in this document.First, the context of this study, a state of the art as well as the presentation of the Back-Side is discussed. The innovation brought by this integration, namely the bonding of the III-V on the back side of the SOI after the structuring of the latter, is then detailed.The correct behavior of a key element to the photonic chip, the grating coupler, is then treated through simulations, fabrication and optical characterizations. We have proved that, under specific conditions, this device has the same measured performances in Back-Side and in Front-Side.The principle of an optical oscillator and then the various modules composing the hybrid laser are then detailed. The implemented laser is based on a hybrid DBR (Distributed Bragg Reflector) III-V/Si cavity. In order to increase the mode confinement in the MQWS (Multi Quantum Wells) and hence ensure a high optical gain, the optical mode is gradually transferred between the III-V waveguide and the silicon waveguide of the hybrid laser by adiabatic tapers, patterned on both sides of the gain zone, to finally be reflected by the mirrors DBR in the silicon.Finally, its manufacturing process is explained before its opto-electronic characterizations are presented. The electrically pumped lasers have been tested under continuous-wave current conditions and the generated light has been collected through the grating coupler to a multi-mode fiber. The fiber coupling losses has been measured to be higher than 10 dB. The output power is up to 1.15 mW at an injection current of 200 mA. The lasing threshold is 45 mA which corresponds to a current density of 1.5 kA/cm2 and the series resistance of the laser contacts is approximately 9 . The threshold voltage is 1.45 V.The laser spectra reflect its single-wavelength laser operation, for different injection currents, with a central wavelength corresponding to the Bragg wavelength of the mirrors. A Side Mode Suppression Ratio (SMSR) of more than 35 dB has been measured. A 4 nm wavelength shift has been observed when injecting 20 mA into both metallic heaters above DBRs.The monolithic integration of a fully CMOS compatible hybrid DBR laser on the backside of a SOI wafer being demonstrated for the first time, implementing CMOS compatible electric interconnects and optical sources on a same chip has could be achieved. This device opens the route to a fully integrated optical transceiver on a Si platform.

CoordenaÃÃo de AperfeiÃoamento de Pessoal de NÃvel Superior / This paper presents a numerical investigation of the propagation and cover (100fs) short pulse switching in a nonlinear coupler dual-core photonic crystal fiber with periodically modulated constructed fiber nonlinearity ( PMN - PFC ). Our main objective was to study the effect of amplitude modulations (AM) and frequency modulation (Wm) in the refractive index of nonlinearity (gamma) at a spread of Photonic Crystal Fiber with initially fixed range with frequency and amplitude periodically varying modulation. The implementation of modulation was inserted into dual-fiber couplers, which has been studied for its use as a whole using ultra switching optical switch and as an optical processor. Our simulations are taking into account the amplitude and frequency modulations of different PMN - PFC. Coupler for coupling whose length is Lc = 1.8 cm, the transmission characteristics of the compression factor , the crosstalk ( Xtalk ) and extinction rate ( Xratio ) levels were studied in the first descending order solitons of high energy pump for considering 2LC. An analysis of the reference (channel 2) channel was observed that the low frequency modulation is an increase in the switching power by increasing the transmission efficiency. For high modulation frequencies transmitted energy efficiency loses. The switching pulses are stronger in the low frequency and high amplitude modulation. The Xtalk is a function of the measurement made on the secondary channel (channel 1) revealed that this increase in unwanted high-frequency energy, to reduce the extent of amplitude modulation. In summary, we have demonstrated that the introduction of a non- linear profile leads to a frequency modulated PMN - PFC high variations in transmission efficiency , Xtalk , Xratio function of frequency and modulation amplitude and the input power. / Este trabalho apresenta uma investigaÃÃo numÃrica da propagaÃÃo e a comutaÃÃo de pulsos curtos capa ( 100fs ) em um acoplador nÃo-linear de dois nÃcleos de fibras de cristal fotÃnico construÃdos com periodicamente modulada a fibra nÃo-linearidade (PMN - PFC). Nosso principal objetivo foi estudar o efeito das modulaÃÃes de amplitude (Am) e modulaÃÃo da frequÃncia (Wm) no Ãndice de refraÃÃo da nÃo-linearidade (gama) em uma propagaÃÃo de Fibra de Cristais FotÃnicos, com o gama inicialmente fixo com frequÃncia e amplitude de modulaÃÃo variando periodicamente. A execuÃÃo da modulaÃÃo foi inserida em uma fibra com acopladores duplo, que tem sido estudados quanto à sua utilizaÃÃo como um todo utilizando ultracomutaÃÃo Ãptica e processador como interruptor Ãptico. Nossas simulaÃÃes estÃo levando em conta da amplitude e frequÃncia diferentes modulaÃÃes do PMN - PFC. Foram estudados acoplador para acoplamento cujo comprimento à Lc = 1,8 centÃmetros, as caracterÃsticas de transmissÃo, o fator de compressÃo, o crosstalk (Xtalk) e taxa de extinÃÃo ( Xratio ) nos nÃveis dos primeiros sÃlitons de ordem decrescente para altas energias bomba considerando 2LC. Uma anÃlise do canal de referÃncia ( canal 2 ) , observou-se que a baixas frequÃncias de modulaÃÃo ocorre um aumento na potÃncia de comutaÃÃo aumentando a eficiÃncia da transmissÃo. Para alta modulaÃÃo freqÃÃncias a eficiÃncia energÃtica transmitida perde. Os pulsos de comutaÃÃo sÃo mais fortes para a baixa frequÃncia e alta amplitude de modulaÃÃo. O Xtalk à uma funÃÃo da mediÃÃo feita no canal secundÃrio ( canal 1 ) , observou-se que este aumento de energia indesejados de alta frequÃncia, para reduzir a medida da modulaÃÃo de amplitude. Em resumo, temos demonstrado que a introduÃÃo de um perfil nÃo-linearidade leva a uma periodicidade modulada PMN - PFC a fortes variaÃÃes na eficiÃncia de transmissÃo, Xtalk , Xratio funÃÃo da freqÃÃncia e modulaÃÃo de amplitude e a potÃncia de entrada.

FundaÃÃo de Amparo à Pesquisa do Estado do Cearà / Apresentamos neste trabalho, uma analise numÃrica para obtenÃÃo de portas lÃgicas em acoplador nÃo-linear simÃtrico (NLDC) em fibras de cristal fotÃnico (PCF), que em sua secÃÃo transversal à formada com matriz periÃdica de buracos de ar, operando em pulso de luz ultracurtos na forma de sÃlitons, com duraÃÃo de 100fs (fentosegundos). Foram investigados formatos dos pulsos em modulaÃÃo por amplitude de pulso (PAM), com chaveamento de mudanÃa de amplitude (ASK), com objetivo de obter portas lÃgicas no NLDC-PCF triplo planar simÃtrico. Neste trabalho usamos acopladores duplos de fibra Ãptica na constituiÃÃo de um InterferÃmetro Mach-Zenhder para construir um sensor de corrente, sua funcionalidade à aplicada para investigar a qualidade da corrente alternada, quer seja na geraÃÃo, transmissÃo ou distribuiÃÃo de energia elÃtrica. Como o interferÃmetro de Mach-Zenhder usa um agente mecÃnico, usaremos o mesmo agente para construir o sensor de corrente constituÃdo de um PiezelÃtrico. Ao fazer o comparativo dos dois sensores, podemos destinar sua usabilidade em diferenciados consumidores / In this work, a numerical analysis to obtain gates in coupler symmetrical nonlinear (NLDC) in photonic crystal fibers (PCF), which in cross section is formed with periodic array of air holes, operating in light pulse ultrashort as solitons, lasting 100fs (fentosegundos). The pulses in pulse amplitude modulation formats were investigated (WFP), with amplitude shift keying (ASK), in order to obtain logic gates in the triple NLDC PCF-planar symmetrical. In this paper we use double couplers fiber optic in setting up a Mach-Zenhder Interferometer to build a current sensor, its functionality is applied to investigate the quality alternating current, whether in the generation, transmission or distribution of electricity. Since the interferometer of Mach-Zenhder uses a mechanical agent, agent will use the same for constructing the current sensor constituted of a piezoelectric. In making the comparison of the two sensors, we can allocate its usability in different consumers

Orientador: Luiz Carlos Barbosa / Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin / Made available in DSpace on 2018-08-06T18:46:29Z (GMT). No. of bitstreams: 1 RamosGonzales_RoddyElky_M.pdf: 6808680 bytes, checksum: 483930056f42b4b00eb9026433b70044 (MD5) Previous issue date: 2003 / Resumo: Este trabalho informa a preparação de guias de onda planar por troca iônica em vidros teluritos dopado com íons de Érbio cujas composições são, 14Na2O-25W O3 - 60TeO2 - 1Er2O3 (mol%) e 2GeO2 - 10N a2O - 12ZnO - 75TeO2 - 1Er2 O3(mol%), foram preparados guias multimodos e monomodos, as profundidades dos guias podem ser controladas pela variação da temperatura e o tempo da troca iônica. Os vidros foram preparados pela técnica convencional de fusão. Os vidros foram cortados e as duas superfícies maiores foram polidas para a caracterização e para a troca iônica. A troca iônica Ag + - Na + foi realizada submergindo as amostras de vidro num banho de sais que continha 2AgN O3 - 49NaNO3 - 49KNO3 (%peso). As temperaturas de difusão foram de 290°C até 360°C e os tempos de difusão de 1h a 24h, dependendo do vidro. Os vidros foram quimicamente estáveis durante o processo da troca iônica. Os índices efetivos dos modos foram medidos pela técnica de acoplamento por prisma em 632,8nm, 1305,4nm e 1536nm na polarização TE. O perfil do índice foi calculado usando o método de WKB inverso e o perfil assumiu-se como uma função gaussiana. Dos perfis medidos das amostras a varias temperaturas e tempos, foram calculados os parâmetros da difusão: coeficientes de difusão efetiva De e sua dependência da temperatura assim como a energia de ativação ED / Abstract: This work reports the preparation of planar waveguides by ionic exchange in glasses tellurite doped with íons of erbium whose compositions are, 14Na2O-25W O3 - 60TeO2 - 1Er2O3 (mol%) and 2GeO2 - 10N a2O - 12ZnO - 75TeO2 - 1Er2 O3 (mol%), have been prepared multi-mode and single-mode waveguides, the depths of the waveguides can be controlled by the variation of ion-exchange temperatures and times. The glasses were prepared by a conventional melting and quenching technique. The glasses were cut and the two larger surfaces were polished for the ion-exchange and characterization. The Ag + - Na + ion-exchange was performed by submerging the glass samples in a molten salt bath containing 2AgN O3 - 49NaNO3 - 49KNO3 (%wt). The diffusion temperatures had been of 290°C to 360°C and diffusion times from 1h to 24h, depending on the glass. The glasses were chemically stable during the process of ion-exchange. The effective mode indices were measured by the prism coupler technique at 632,8nm, 1305,4nm and 1536nm at TE polarization. The index profile was calculated using the inverse WKB method and the profile by assuming as a gaussian function. From measured index profiles for the samples at various temperatures and times, were calculated the diffusion parameters, effective diffusion coefficients De and its temperature dependence as well as the activation energy ED / Mestrado / Física / Mestre em Física