Cette thèse porte sur le thème général de la fiabilité des circuits microélectroniques. Le but de notre travail fut de développer un outil de simulation multi-physiques pour la conception des circuits intégrés fiables qui possède les caractéristiques innovatrices suivantes : • (i) L’intégration dans un environnement de conception microélectronique standard, tel que l’environnement Cadence® ; • (ii) La possibilité de simulation, sur de longues durées, du comportement des circuits CMOS analogiques en tenant compte du phénomène de vieillissement ; • (iii) La simulation de plusieurs physiques (électrique-thermique-mécanique) couplées dans ce même environnement de CAO en utilisant la méthode de simulation directe. Ce travail de thèse a été réalisé en passant par trois grandes étapes traduites par les trois parties de ce manuscrit. / This thesis was carried out under the theme of the microelectronics Integrated Circuits Reliability. The aim of our work was to develop a multi-physics simulation tool for the design of reliable integrated circuits. This tool has the following innovative features : • (i) The integration in a standard microelectronics design environment, such as the Cadence® environment ;• (ii) The possibility of efficient simulation, over long periods, of analog CMOS circuits taking into account the aging henomenon ; • (iii) The simulation of multiple physical behaviours of ICs (electrical-thermalmechanical) coupled in the same environment using the direct simulation method. This work was carried out through three main stages detailed in the three parts of this Manuscript.

[pt] É possível criar uma não-linearidade de segunda ordem em amostras de sílica a partir do processo de polarização. Essas amostras vítreas com o X(2) induzido potencialmente podem ser utilizadas na fabricação de componentes como moduladores ópticos e dobradores de freqüência. O processo de polarização eletrotérmica utiliza alta tensão e alta temperatura e forma uma região de depleção de íons (camada de depleção) onde um campo elétrico intenso é gravado de forma permanente dentro da amostra. Neste trabalho, foram utilizadas diferentes técnicas de caracterização para medir a extensão dessa camada e os resultados foram comparados. As técnicas escolhidas foram: Ataque Químico Interferométrico (com ácido fluorídrico), Maker Fringe, Microscopia Óptica e de Força Atômica e Ataque Interferométrico com Medida de Segundo Harmônico em Tempo Real. Além disso, foram feitos alguns estudos paralelos visando à otimização e a reprodutibilidade do processo de polarização. Foram realizadas dessa forma análises sobre o material dos eletrodos utilizados e sobre a influência da condição inicial da superfície da amostra antes da polarização. / [en] It is possible to create a second order non linearity in silica samples with the poling process. The glass samples with an induced X(2) have a potential application on the fabrication of optical devices such as modulators and frequency converters. In the electrothermal poling process, high voltage and high temperature are applied to the samples forming an ion depleted region (depletion layer), where an intense electric field is permanently recorded. In this work, several characterization techniques have been utilized to measure the width of the depletion layer and compared the obtained results. The chosen techniques were: Interferometric Etching, Maker Fringe, Optical and Atomic Force Microscopy and the Interferometric Etching with Real Time Second Harmonic Measurement. In addition to this, we performed other studies aiming the optimization and reproducibility of the poling process. In this way, we analyzed the material used for the electrodes and the influence of the initial condition of the sample surface before poling.

L'électronique de puissance et particulièrement les systèmes de conversions deviennent un enjeu majeur de la transition énergétique et de l'avenir des transports. Les contraintes technico-économiques liées aux nouvelles applications impliquent une augmentation des densités de puissance au sein des modules tout en limitant leur coût et en conservant une robustesse satisfaisante. Aujourd'hui, des solutions semblent émerger grâce à des structures innovantes associées aux composants grands gap et à l'intégration tridimensionnelle. Ces solutions apportent cependant un certain nombre de contraintes liées aux interconnexions électrothermomécaniques (ETM). L'augmentation des niveaux de température permis par les composants grands gap et l'attrait du refroidissement double face offert par les assemblages 3D augmentent de manière importante les contraintes thermomécaniques et causent des problèmes de fiabilité. C'est pourquoi de nouvelles interconnexions ETM sont développées pour s'adapter aux nouvelles contraintes et rendre possible ce saut technologique. Cependant les outils permettant la caractérisation thermique et électrique de ces nouvelles interconnexions restent à développer. Les travaux présentés dans ce mémoire se portent sur le développement et la mise au point d'outils de caractérisation des interconnexions dans des assemblages 3D. La difficulté d'obtenir la température du composant au sein du boîtier nous a poussé à explorer deux voies permettant d'estimer la température de jonction (TJ). Premièrement par l'implantation de capteurs de température et de tension au coeur d'un composant de puissance grâce la réalisation d'une puce de test spécifique. Et deuxièmement, par l'observation de la réponse en température de composants fonctionnels faisant appel à l'utilisation d'un paramètre électrique thermosensible (PTS) du composant. Les deux pistes explorées mettent à profit des solutions spécifiques innovantes pour permettre des caractérisations thermique et électrique fines des assemblages d'électronique de puissance. / Power electronic and particularly conversion systems are becoming a major challenge for the future of energetic and transport systems. Technical and economic constraints related to new applications lead to an increase of module power densities while reducing cost and maintaining a good robustness. Today, solutions seem to emerge from innovative structures associated to wide band-gap semiconductors and three-dimensional integration. These solutions lead to many constraints in electro-thermo-mechanical (ETM) interconnection field. Temperature level rises allowed by wide band-gap semiconductors and attractiveness of double sided cooling provide by the 3D assemblies have significantly increase thermo-mechanical stresses and cause reliability problems. This is why new ETM interconnections are developed to facing those difficulties and enable this technological gap. However, thermal and electrical interconnections characterization tools need to be develop. Works presented in this thesis focuses on the development of tools for new interconnections characterization adapted to 3D package. The difficulty of obtaining the temperature of the component within the package has led us to explore two ways to estimate the junction temperature (TJ). In a first hand we integrate temperature and voltage sensors inside a power component in a clean room process thanks to the achievement of a specific thermal test chip (TTC). And in a second hand, by observing the temperature response of functional components, using a temperature-sensitive electrical parameter (TSEP). The both paths explored take advantage of innovative specific solutions to allow precise thermal and electrical characterization of power electronic assemblies.

A high performance vertical organic transistor based on the organic semiconductor C60 is developed in this work. The sandwich geometry of this transistor, well known from organic light-emitting diodes or organic solar cells, allows for a short transfer length of charge carriers in vertical direction. In comparison to conventional organic field-effect transistors with lateral current flow, much smaller channel lengths are reached, even if low resolution and low-cost shadow masks are used. As a result, the transistor operates at low voltages (1 V), drives current densities in the range of 10 A/cm², and enables a switching speed in the MHz range. The operation mechanism is studied in detail. It is demonstrated that the transistor can be described by a nano-porous permeable base electrode insulated by a thin native aluminum oxide film on its surface. Thus, the transistor has to be understood as two metal-oxide-semiconductor diodes, sharing a common electrode, the base. Upon applying a bias to the base, charges accumulate in front of the oxide, similar to the channel formation in a field-effect transistor. Due to the increased conductivity in this region, charges are efficiently transported toward and through the pinholes of the base electrode, realizing a high charge carrier transmission. Thus, even a low concentration of openings in the base electrode is sufficient to ensure large transmission currents. The device concept turns out to be ideal for applications where high transconductance and high operation frequency are needed, e.g. in analog amplifier circuits. The full potential of the transistor is obtained if the active area is structured by an insulating layer in order to perfectly align the three electrodes. Besides that, molecular doping near the charge injecting contact is essential to minimize the contact resistance. Due to the high power density in the vertical C60 transistor, Joule self-heating occurs, which is discussed in this work in the context of organic semiconductors. The large activation energies of the electrical conductivity observed cause the presence of S-shaped current-voltage characteristics and result in thermal switching as well as negative differential resistances, as demonstrated for several two-terminal devices. A detailed understanding of these processes is important to determine restrictions and proceed with further optimizations.:CONTENTS Publications, patents and conference contributions 9 1 Introduction 13 2 Theory 19 2.1 From small molecules to conducting thin films . . . . . . . . . . . . . . . . . . . . 19 2.1.1 Aromatic hydrocarbons . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 2.1.2 Solid state physics of molecular materials . . . . . . . . . . . . . . . . . . . 24 2.1.3 Energetic landscape of an organic semiconductor . . . . . . . . . . . . . . 26 2.1.4 Charge transport . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 2.2 Semiconductor structures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 2.2.1 Semiconductor statistics and transport . . . . . . . . . . . . . . . . . . . . 42 2.2.2 Charge injection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 2.2.3 Limitations of the current . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52 2.2.4 Metal-oxide-semiconductor structures . . . . . . . . . . . . . . . . . . . . . 57 2.3 Self-heating theory of thermistor device . . . . . . . . . . . . . . . . . . . . . . . . 61 3 Organic transistors 65 3.1 The organic field-effect transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66 3.1.1 Basic principle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66 3.1.2 Device characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67 3.1.3 Device geometries . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69 3.1.4 Device parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 3.1.5 Issues of OFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73 3.1.6 Outlook . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 3.2 Overview over vertical organic transistors . . . . . . . . . . . . . . . . . . . . . . . 76 3.2.1 VOTs with an unstructured base electrode . . . . . . . . . . . . . . . . . . . 76 3.2.2 VOTs with structured base electrode . . . . . . . . . . . . . . . . . . . . . . 79 3.2.3 Charge injection modulating transistors . . . . . . . . . . . . . . . . . . . . 82 3.2.4 Vertical organic field-effect transistor . . . . . . . . . . . . . . . . . . . . . . 85 3.2.5 Development of the scientific output . . . . . . . . . . . . . . . . . . . . . . 87 3.2.6 Competing technologies and approaches . . . . . . . . . . . . . . . . . . . 88 3.3 Vertical Organic Triodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91 3.3.1 Stucture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91 3.3.2 Electronic configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91 3.3.3 Energetic alignment of the diodes . . . . . . . . . . . . . . . . . . . . . . . 92 3.3.4 Current flow in the on and the off-state . . . . . . . . . . . . . . . . . . . . 94 3.3.5 Definition and extraction of parameters . . . . . . . . . . . . . . . . . . . . 95 4 Experimental 101 4.1 General processing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101 4.1.1 Thermal vapor deposition . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101 4.1.2 Processing tools . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102 4.1.3 Processing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103 4.2 Mask setup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104 4.3 Measurement setups and tools . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108 4.3.1 Current-voltage measurements . . . . . . . . . . . . . . . . . . . . . . . . . 108 4.3.2 Frequency-dependent measurements . . . . . . . . . . . . . . . . . . . . . 108 4.3.3 Impedance Spectroscopy . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109 4.3.4 Ultraviolet and X-ray Photoelectron Spectroscopy . . . . . . . . . . . . . . . 110 4.3.5 Thermal imaging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112 4.4 Materials used in C60 triodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113 4.4.1 Buckminsterfullerene C60 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113 4.4.2 Tungsten paddlewheel W2(hpp)4 . . . . . . . . . . . . . . . . . . . . . . . . 116 4.4.3 Aluminum and its oxides . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117 4.4.4 Spiro-TTB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 4.5 Materials used in Organic Light-emitting Diodes . . . . . . . . . . . . . . . . . . . 121 5 Introduction of C60 VOTs 123 5.1 Sample preparation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123 5.2 Diode characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124 5.3 Base sweep measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125 5.4 Determination of parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128 5.5 Common-base connection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131 5.6 Output characteristic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136 5.7 Frequency-dependent measurement . . . . . . . . . . . . . . . . . . . . . . . . . . 137 5.8 Intermediate summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139 6 Effect of annealing 141 6.1 Charge carrier transmission . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141 6.2 Sheet resistance and transmittance of the base electrode . . . . . . . . . . . . . . 142 6.3 Investigation of morphological changes . . . . . . . . . . . . . . . . . . . . . . . . 144 6.4 Photoelectron spectroscopy of the base electrode . . . . . . . . . . . . . . . . . . 153 6.5 Influence of air exposure and annealing onto the dopants . . . . . . . . . . . . . . 159 6.6 Electrical characteristics of the diodes . . . . . . . . . . . . . . . . . . . . . . . . . 162 6.7 Intermediate summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165 7 Working Mechanism 167 7.1 Experimental . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168 7.2 Diode characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168 7.3 Simulation and modeling of the diode characteristics . . . . . . . . . . . . . . . . . 173 7.4 Interpretation of the operation mechanism . . . . . . . . . . . . . . . . . . . . . . . 181 7.5 Intermediate summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 182 8 Optimization of VOTs 183 8.1 Misalignment of the electrodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 183 8.2 Use of doping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 186 8.3 Variation of the intrinsic layer thickness . . . . . . . . . . . . . . . . . . . . . . . . . 190 8.4 Structuring the active area . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 193 8.5 High-frequency operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 201 8.6 Intermediate summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 207 9 Self-heating in organic semiconductors 209 9.1 Temperature activation in C60 triodes . . . . . . . . . . . . . . . . . . . . . . . . . . 210 9.2 nin-C60 crossbar structures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 211 9.3 Thermal switching in organic semiconductors . . . . . . . . . . . . . . . . . . . . . 216 9.4 Self-heating in large area devices: Organic LEDs . . . . . . . . . . . . . . . . . . . 218 9.5 Intermediate summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225 10 Conclusion and Outlook 227 10.1 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 227 10.2 Outlook . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 229 A Appendix 233 A.1 Appendix 1: Accuracy of the current gain . . . . . . . . . . . . . . . . . . . . . . . 233 A.2 Appendix 2: Fit of XRR measurements . . . . . . . . . . . . . . . . . . . . . . . . . 234 A.3 Appendix 3: Atomic force microscopy . . . . . . . . . . . . . . . . . . . . . . . . . 236 A.4 Appendix 4: Transmission electron microscopy . . . . . . . . . . . . . . . . . . . . 236 A.5 Appendix 5: Drift-diffusion simulation of nin devices . . . . . . . . . . . . . . . . . 239 A.6 Appendix 6: A simple parallel thermistor circuit . . . . . . . . . . . . . . . . . . . . 241 List of Figures 245 References 290 / In dieser Arbeit wird ein vertikaler organischer Transistor mit hoher Leistungsfähigkeit vorgestellt, der auf dem organischen Halbleiter C60 basiert. Die von organischen Leuchtdioden und organischen Solarzellen bekannte \'Sandwich’-Geometrie wird verwendet, so dass es möglich ist, für die vertikale Stromrichtung kurze Transferlängen der Ladungsträger zu erreichen. Im Vergleich zum konventionellen organischen Feldeffekttransistor mit lateralem Stromfluss werden dadurch viel kleinere Kanallängen erreicht, selbst wenn preisgünstige Schattenmasken mit geringer Auflösung für die thermische Verdampfung im Vakuum genutzt werden. Daher kann der Transistor bei einer Betriebsspannung von 1 V Stromdichten im Bereich von 10 A/cm² und Schaltgeschwindigkeiten im MHz-Bereich erreichen. Obwohl diese Technologie vielversprechend ist, fehlt bislang ein umfassendes Verständnis des Funktionsmechanismus. Hier wird gezeigt, dass der Transistor eine nanoporöse Basiselektrode hat, die durch ein natives Oxid auf ihrer Oberfläche elektrisch isoliert ist. Daher kann das Bauelement als zwei Metall-Oxid-Halbleiter-Dioden verstanden werden, die sich eine gemeinsame Elektrode, die Basis, teilen. Unter Spannung akkumulieren Ladungsträger vor dem Oxid, ähnlich zur Ausbildung eines Ladungsträgerkanals im Feldeffekttransistor. Aufgrund der erhöhten Leitfähigkeit in dieser Region werden Ladungsträger effizient zu und durch die Öffnungen der Basis transportiert, was zu hohen Ladungsträgertransmissionen führt. Selbst bei einer geringen Konzentration von Löchern in der Basiselektrode werden so hohe Transmissionsströme erzielt. Das Bauelementkonzept ist ideal für Anwendungen, in denen eine hohe Transkonduktanz und eine hohe Schaltgeschwindigkeit erreicht werden soll, z.B. in analogen Schaltkreisen, die kleine Signale verarbeiten. Das volle Potential des Transistors offenbart sich jedoch, wenn die aktive Fläche durch eine Isolatorschicht strukturiert wird, um den Überlapp der drei Elektroden zu optimieren, so dass Leckströme minimiert werden. Daneben ist die Dotierung der Molekülschichten am Emitter essentiell, um Kontaktwiderstände zu vermeiden. Aufgrund der hohen Leistungsdichten in den vertikalen C60-Transistoren kommt es zur Selbsterwärmung, die in dieser Arbeit im Kontext organischen Halbleiter diskutiert wird. Die große Aktivierungsenergie der Leitfähigkeit führt zu S-förmigen Strom-Spannungs-Kennlinien und hat thermisches Umschalten sowie negative differentielle Widerstände zur Folge, was für verschiedene Bauelemente demonstriert wird. Ein detailliertes Verständnis dieser Prozesse ist wichtig, um Beschränkungen für Anwendungen zu erkennen und um entsprechende Verbesserungen einzuführen.:CONTENTS Publications, patents and conference contributions 9 1 Introduction 13 2 Theory 19 2.1 From small molecules to conducting thin films . . . . . . . . . . . . . . . . . . . . 19 2.1.1 Aromatic hydrocarbons . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 2.1.2 Solid state physics of molecular materials . . . . . . . . . . . . . . . . . . . 24 2.1.3 Energetic landscape of an organic semiconductor . . . . . . . . . . . . . . 26 2.1.4 Charge transport . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 2.2 Semiconductor structures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 2.2.1 Semiconductor statistics and transport . . . . . . . . . . . . . . . . . . . . 42 2.2.2 Charge injection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 2.2.3 Limitations of the current . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52 2.2.4 Metal-oxide-semiconductor structures . . . . . . . . . . . . . . . . . . . . . 57 2.3 Self-heating theory of thermistor device . . . . . . . . . . . . . . . . . . . . . . . . 61 3 Organic transistors 65 3.1 The organic field-effect transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66 3.1.1 Basic principle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66 3.1.2 Device characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67 3.1.3 Device geometries . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69 3.1.4 Device parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 3.1.5 Issues of OFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73 3.1.6 Outlook . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 3.2 Overview over vertical organic transistors . . . . . . . . . . . . . . . . . . . . . . . 76 3.2.1 VOTs with an unstructured base electrode . . . . . . . . . . . . . . . . . . . 76 3.2.2 VOTs with structured base electrode . . . . . . . . . . . . . . . . . . . . . . 79 3.2.3 Charge injection modulating transistors . . . . . . . . . . . . . . . . . . . . 82 3.2.4 Vertical organic field-effect transistor . . . . . . . . . . . . . . . . . . . . . . 85 3.2.5 Development of the scientific output . . . . . . . . . . . . . . . . . . . . . . 87 3.2.6 Competing technologies and approaches . . . . . . . . . . . . . . . . . . . 88 3.3 Vertical Organic Triodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91 3.3.1 Stucture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91 3.3.2 Electronic configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91 3.3.3 Energetic alignment of the diodes . . . . . . . . . . . . . . . . . . . . . . . 92 3.3.4 Current flow in the on and the off-state . . . . . . . . . . . . . . . . . . . . 94 3.3.5 Definition and extraction of parameters . . . . . . . . . . . . . . . . . . . . 95 4 Experimental 101 4.1 General processing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101 4.1.1 Thermal vapor deposition . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101 4.1.2 Processing tools . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102 4.1.3 Processing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103 4.2 Mask setup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104 4.3 Measurement setups and tools . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108 4.3.1 Current-voltage measurements . . . . . . . . . . . . . . . . . . . . . . . . . 108 4.3.2 Frequency-dependent measurements . . . . . . . . . . . . . . . . . . . . . 108 4.3.3 Impedance Spectroscopy . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109 4.3.4 Ultraviolet and X-ray Photoelectron Spectroscopy . . . . . . . . . . . . . . . 110 4.3.5 Thermal imaging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112 4.4 Materials used in C60 triodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113 4.4.1 Buckminsterfullerene C60 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113 4.4.2 Tungsten paddlewheel W2(hpp)4 . . . . . . . . . . . . . . . . . . . . . . . . 116 4.4.3 Aluminum and its oxides . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117 4.4.4 Spiro-TTB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 4.5 Materials used in Organic Light-emitting Diodes . . . . . . . . . . . . . . . . . . . 121 5 Introduction of C60 VOTs 123 5.1 Sample preparation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123 5.2 Diode characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124 5.3 Base sweep measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125 5.4 Determination of parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128 5.5 Common-base connection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131 5.6 Output characteristic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136 5.7 Frequency-dependent measurement . . . . . . . . . . . . . . . . . . . . . . . . . . 137 5.8 Intermediate summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139 6 Effect of annealing 141 6.1 Charge carrier transmission . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141 6.2 Sheet resistance and transmittance of the base electrode . . . . . . . . . . . . . . 142 6.3 Investigation of morphological changes . . . . . . . . . . . . . . . . . . . . . . . . 144 6.4 Photoelectron spectroscopy of the base electrode . . . . . . . . . . . . . . . . . . 153 6.5 Influence of air exposure and annealing onto the dopants . . . . . . . . . . . . . . 159 6.6 Electrical characteristics of the diodes . . . . . . . . . . . . . . . . . . . . . . . . . 162 6.7 Intermediate summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165 7 Working Mechanism 167 7.1 Experimental . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168 7.2 Diode characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168 7.3 Simulation and modeling of the diode characteristics . . . . . . . . . . . . . . . . . 173 7.4 Interpretation of the operation mechanism . . . . . . . . . . . . . . . . . . . . . . . 181 7.5 Intermediate summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 182 8 Optimization of VOTs 183 8.1 Misalignment of the electrodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 183 8.2 Use of doping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 186 8.3 Variation of the intrinsic layer thickness . . . . . . . . . . . . . . . . . . . . . . . . . 190 8.4 Structuring the active area . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 193 8.5 High-frequency operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 201 8.6 Intermediate summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 207 9 Self-heating in organic semiconductors 209 9.1 Temperature activation in C60 triodes . . . . . . . . . . . . . . . . . . . . . . . . . . 210 9.2 nin-C60 crossbar structures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 211 9.3 Thermal switching in organic semiconductors . . . . . . . . . . . . . . . . . . . . . 216 9.4 Self-heating in large area devices: Organic LEDs . . . . . . . . . . . . . . . . . . . 218 9.5 Intermediate summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225 10 Conclusion and Outlook 227 10.1 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 227 10.2 Outlook . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 229 A Appendix 233 A.1 Appendix 1: Accuracy of the current gain . . . . . . . . . . . . . . . . . . . . . . . 233 A.2 Appendix 2: Fit of XRR measurements . . . . . . . . . . . . . . . . . . . . . . . . . 234 A.3 Appendix 3: Atomic force microscopy . . . . . . . . . . . . . . . . . . . . . . . . . 236 A.4 Appendix 4: Transmission electron microscopy . . . . . . . . . . . . . . . . . . . . 236 A.5 Appendix 5: Drift-diffusion simulation of nin devices . . . . . . . . . . . . . . . . . 239 A.6 Appendix 6: A simple parallel thermistor circuit . . . . . . . . . . . . . . . . . . . . 241 List of Figures 245 References 290

Ces travaux de thèse portent sur la conception, la réalisation et d'une nouvelle génération de MOEMS (Micro-Optical-Electrical-Mechanical System) pour le contrôle actif du faisceau laser émis par des matrices de VCSELs (Vertical-Cavity Surface-Emitting Lasers). Le microsystème à base de polymères que nous avons conçu est compatible avec une intégration monolithique en post-processing. Il est composé d'une membrane suspendue associée à une microlentille réfractive. Le plan de focalisation est contrôlé dynamiquement grâce au déplacement vertical de la membrane grâce à un actionnement électrothermique. La géométrie du MOEMS a été optimisée à l'aide notamment de simulations électro-thermo-mécaniques pour minimiser l'énergie de commande et fiabiliser les dispositifs. Nous avons ensuite développé l'ensemble des briques technologiques pour la fabrication collective de ce dispositif sur des matrices de VCSELs. En particulier, une technique originale de transfert thermique doux de films secs photosensibles épais a été mise au point au moyen d'un équipement de nano-impression, pour permettre un dépôt uniforme et précis sur des substrats fragiles ou de faible taille. En outre, nous avons développé un procédé simple et totalement planaire pour la fabrication du MOEMS et optimisé un procédé de dépôt par jets d'encre pour l'intégration finale des microlentilles, avec la possibilité de choisir la distance focale la plus adaptée à la fin du process. La caractérisation des microsystèmes que nous avons réalisés a conduit à l'obtention de déplacements mécaniques de 8µm pour seulement 12.5mW appliqués, ce qui constitue une validation de nos résultats de modélisation. Enfin, des premiers résultats de focalisation dynamique du faisceau VCSELs sont présentés. / This thesis deals with the study and the fabrication of a novel type of polymer MOEMS (Micro Optical Electrical Mechanical Systems) to achieve passive or active beam shaping of Vertical-Cavity Surface-Emitting Lasers (VCSELs). To improve the photonic integration of these compact laser sources in optical communication and detection systems (sensors, biomedical analysis), we designed a polymer-based optical microsystem that is suitable with a post-processing integration on VCSELs. Its operation principle is based on the out-of-plane displacement of a suspended SU-8 membrane including a polymer refractive microlens at its surface. Thanks to electro-thermal actuation, the vertical displacement of the membrane allows to dynamically modify the microlens-source distance and leads to a vertical shift of the laser beam waist position. MOEMS actuation power and reliability were optimized owing to a comprehensive tri-dimensional thermo-electro-mechanical model that takes into account SU-8 material properties and precise geometry of the device. Technological steps necessary for the collective fabrication of such MOEMS on VCSELs arrays were also developed. In particular, we report on a new photoresist film transfer method we developed to achieve a highly uniform fabrication of high aspect ratio MOEMS on small-sized or fragile samples such as GaAs-based VCSELs wafers. This method that we call "soft thermal printing" is based on the use of a thermal nano-imprint set-up. Moreover, a simple and planar process for MOEMS fabrication was successfully tested. A dedicated inkjet printing process for drop-on-demand deposition of the microlens on the membrane center was also developed. Finally, the fabricated MOEMS were characterized. A vertical displacement as high as 8µm was observed for only 12.5mW applied, in good agreement with our 3D modeling results and first results on 850nm VCSEL dynamic beam focusing were obtained, demonstrating the interest of our approach.

Um estudo sistemático a respeito da utilização de padrão interno em determinações multielementares por espectrometria de absorção atômica (ETAAS) foi desenvolvido. O objetivo principal do presente trabalho foi verificar a possibilidade de melhorar a precisão e a exatidão dos resultados analíticos, que são obtidos na análise de fluidos biológicos. O pré-tratamento dessas amostras foi simplificado e reduzido a uma única etapa de diluição com surfactante (Triton X-100) e ácido (HNO3). Conseqüentemente, a complexidade da solução diluída de amostra, a ser introduzida no tubo de grafite, apresenta uma elevada quantidade de concomitantes que podem provocar interferências químicas. A seleção preliminar dos elementos a serem testados como padrão interno considerou a semelhança de parâmetros físico-químicos relacionados com o processo de atomização. Desta forma, Ag, Bi, In e Tl foram testados como padrão interno para a determinação simultânea de Cd/Pb em sangue e urina, enquanto Bi, Ge, In, Sb, Sn e Te foram os elementos selecionados para a determinação de Mn/Ni/Se em soro sangüíneo. A melhoria da qualidade dos resultados analíticos obtidos na determinação simultânea de Cd e Pb em sangue foi observada quando Ag foi utilizada como padrão interno, na presença de NH4H2PO4 como modificador químico. Verificou-se uma melhoria na exatidão dos resultados obtidos para Cd e Pb, após a correção com padrão interno. Por outro lado, os resultados obtidos na análise de urina não foram corrigidos por nenhum dos elementos testados. Os melhores resultados para a determinação simultânea de Mn, Ni e Se foram obtidos com a utilização de Bi, Sn e Te como padrão interno. Entretanto, verificou-se que a correção de todos os resultados não seria viável com o uso de um único padrão interno. O melhor desempenho nos testes realizados na presença de soro sangüíneo foi obtido com Bi, que melhorou discretamente a precisão dos resultados obtidos para Se. Desta forma, a padronização interna visando a determinação simultânea de Mn, Ni e Se não foi eficiente. A padronização interna em ETAAS, com a finalidade de melhorar a precisão e a exatidão dos resultados analíticos, é uma estratégia tão complexa, quanto os efeitos interferentes que se pretende corrigir: são necessários mais estudos para compreender melhor como a utilização de uma condição de compromisso afeta os processos de atomização, bem como mais informações a respeito das interferências físicas e químicas causadas por amostras complexas, analisadas por ETAAS após uma simples etapa de diluição. Deve-se considerar com especial atenção o modificador químico e as temperaturas das etapas de pirólise e de atomização empregadas, que são parâmetros críticos para o desempenho de um elemento como padrão interno. / A systematic study involving the use of internal standard for multielement determinations by electrothermal atomic absorption spectrometry was developed. The main objective of this work was evaluate the possibility of improving precision and accuracy of the analytical results for biological fluids. The sample pre-treatment was reduced to a single dilution step with surfactant (Triton X-100) and acid (HNO3), increasing the amount of concomitant introduced into the atomizer. The preliminary selection of the elements to be tested as internal standard considered the resemblance of physico-chemical parameters related with the atomization process. Thus, Ag, Bi, In and Tl were tested as internal standard for the simultaneous determination of Cd/Pb in blood and urine, and Bi, Ge, In, Sb, Sn and Te were the selected elements for the determination of Mn/Ni/Se in blood serum. The correction of the results obtained for the simultaneous determination of Cd and Pb in blood was achieved when Ag was used as internal standard, in presence of NH4H2PO4 as chemical modifier. An improvement for the accuracy of the results was observed for both analytes after their correction with the internal standard. On the other hand, the results obtained for the urine analysis were not corrected by using the tested elements. The best results for the simultaneous determination of Mn, Ni and Se were observed when Bi, Sn and Te were used as internal standard. However, the correction for the results for all analytes was not possible by using only one internal standard. The best performance in presence of the serum was obtained for Bi, which improves slightly the precision for the Se results. Thus, the internal standardization for the simultaneous determination of Mn, Ni and Se was not efficient. The internal standardization in ETAAS, aiming the improvement of precision and accuracy of the analytical results, is a strategy as complex as the interference effects to be corrected: more studies are required in order to better understand how the adoption of a compromised condition disturbs the atomization processes, as well as to get more information about the physical and chemical interference caused by complex samples, analyzed by ETAAS after a single dilution step. The chemical modifier and the selected temperatures for the pyrolysis and atomization steps are critical parameters for the performace of an internal standard and they should be carefully considered.

Ce travail de thèse s’inscrit dans la continuité des activités de recherche du laboratoire GREAH sur les problématiques de la gestion d’énergie électrique et de l’amélioration de la qualité énergétique des systèmes de production aux énergies renouvelables. En effet, le couplage de plusieurs sources de natures différentes entraîne des problématiques de dimensionnement, de qualité d’énergie et de la durée de vie des éléments interconnectés. La démarche scientifique repose sur la caractérisation de l'évolution des résistances et des capacités des cellules de batteries LFP/supercondensateurs en fonction des contraintes électriques et thermiques, suivi de la modélisation du vieillissement accéléré des cellules. Nous proposons dans ce mémoire de thèse des améliorations de la réponse dynamique d’un bateau fluvial à propulsion électrique par l’hybridation des batteries LFP et des supercondensateurs. Nous proposons également une approche électrothermique pour la caractérisation et la modélisation multi-physique du vieillissement des batteries et supercondensateurs en utilisant des contraintes combinées de la température et de la fréquence des ondulations du courant de charge/décharge des cellules. Les données expérimentales collectées ont permis d'établir des modèles des supercondensateurs et des batteries dédiés aux systèmes multi-sources incluant des sources d’énergie renouvelable (éoliens et hydroliens). Les modèles développés se révèlent très précis par rapport aux résultats expérimentaux. Ils permettent une bonne description du phénomène de vieillissement des batteries LFP/supercondensateurs dû aux opérations de charge/décharge avec un courant continu fluctuant combiné à une température variable. / This thesis work is a continuation of the research activities of the GREAH laboratory on the issues of the management of electrical energy and improving the energy quality of production systems for renewable energy. Indeed, the coupling of several different nature sources entails the problems of dimension, quality of energy and the lifetime of the interconnected elements. The scientific approach is based on the characterization of the evolution of the resistances and capacitances of the batteries/supercapacitors cells according to the electrical and thermal constraints, followed by the modeling of accelerated cells aging. In this thesis, we propose improvements to the dynamic response of an electric propulsion fluvial boat by using the hybrid system of lithium-batteries and supercapacitors. We also propose an electrothermal approach for the multi-physical characterization and modeling of the batteries and supercapacitors aging, using combined constraints of the temperature and frequency of the DC current ripples. The experimental data has been collected to establish models of batteries and supercapacitors dedicated to multi-source systems including renewable energy sources (wind and tidal turbines). The results of the developed models shown high accuracy compared with experimental results. These models illustrated a good description of the aging phenomenon of batteries/ supercapacitors due to charging/discharging operations with a fluctuating continuous current combined with a variable temperature.

Um estudo sistemático a respeito da utilização de padrão interno em determinações multielementares por espectrometria de absorção atômica (ETAAS) foi desenvolvido. O objetivo principal do presente trabalho foi verificar a possibilidade de melhorar a precisão e a exatidão dos resultados analíticos, que são obtidos na análise de fluidos biológicos. O pré-tratamento dessas amostras foi simplificado e reduzido a uma única etapa de diluição com surfactante (Triton X-100) e ácido (HNO3). Conseqüentemente, a complexidade da solução diluída de amostra, a ser introduzida no tubo de grafite, apresenta uma elevada quantidade de concomitantes que podem provocar interferências químicas. A seleção preliminar dos elementos a serem testados como padrão interno considerou a semelhança de parâmetros físico-químicos relacionados com o processo de atomização. Desta forma, Ag, Bi, In e Tl foram testados como padrão interno para a determinação simultânea de Cd/Pb em sangue e urina, enquanto Bi, Ge, In, Sb, Sn e Te foram os elementos selecionados para a determinação de Mn/Ni/Se em soro sangüíneo. A melhoria da qualidade dos resultados analíticos obtidos na determinação simultânea de Cd e Pb em sangue foi observada quando Ag foi utilizada como padrão interno, na presença de NH4H2PO4 como modificador químico. Verificou-se uma melhoria na exatidão dos resultados obtidos para Cd e Pb, após a correção com padrão interno. Por outro lado, os resultados obtidos na análise de urina não foram corrigidos por nenhum dos elementos testados. Os melhores resultados para a determinação simultânea de Mn, Ni e Se foram obtidos com a utilização de Bi, Sn e Te como padrão interno. Entretanto, verificou-se que a correção de todos os resultados não seria viável com o uso de um único padrão interno. O melhor desempenho nos testes realizados na presença de soro sangüíneo foi obtido com Bi, que melhorou discretamente a precisão dos resultados obtidos para Se. Desta forma, a padronização interna visando a determinação simultânea de Mn, Ni e Se não foi eficiente. A padronização interna em ETAAS, com a finalidade de melhorar a precisão e a exatidão dos resultados analíticos, é uma estratégia tão complexa, quanto os efeitos interferentes que se pretende corrigir: são necessários mais estudos para compreender melhor como a utilização de uma condição de compromisso afeta os processos de atomização, bem como mais informações a respeito das interferências físicas e químicas causadas por amostras complexas, analisadas por ETAAS após uma simples etapa de diluição. Deve-se considerar com especial atenção o modificador químico e as temperaturas das etapas de pirólise e de atomização empregadas, que são parâmetros críticos para o desempenho de um elemento como padrão interno. / A systematic study involving the use of internal standard for multielement determinations by electrothermal atomic absorption spectrometry was developed. The main objective of this work was evaluate the possibility of improving precision and accuracy of the analytical results for biological fluids. The sample pre-treatment was reduced to a single dilution step with surfactant (Triton X-100) and acid (HNO3), increasing the amount of concomitant introduced into the atomizer. The preliminary selection of the elements to be tested as internal standard considered the resemblance of physico-chemical parameters related with the atomization process. Thus, Ag, Bi, In and Tl were tested as internal standard for the simultaneous determination of Cd/Pb in blood and urine, and Bi, Ge, In, Sb, Sn and Te were the selected elements for the determination of Mn/Ni/Se in blood serum. The correction of the results obtained for the simultaneous determination of Cd and Pb in blood was achieved when Ag was used as internal standard, in presence of NH4H2PO4 as chemical modifier. An improvement for the accuracy of the results was observed for both analytes after their correction with the internal standard. On the other hand, the results obtained for the urine analysis were not corrected by using the tested elements. The best results for the simultaneous determination of Mn, Ni and Se were observed when Bi, Sn and Te were used as internal standard. However, the correction for the results for all analytes was not possible by using only one internal standard. The best performance in presence of the serum was obtained for Bi, which improves slightly the precision for the Se results. Thus, the internal standardization for the simultaneous determination of Mn, Ni and Se was not efficient. The internal standardization in ETAAS, aiming the improvement of precision and accuracy of the analytical results, is a strategy as complex as the interference effects to be corrected: more studies are required in order to better understand how the adoption of a compromised condition disturbs the atomization processes, as well as to get more information about the physical and chemical interference caused by complex samples, analyzed by ETAAS after a single dilution step. The chemical modifier and the selected temperatures for the pyrolysis and atomization steps are critical parameters for the performace of an internal standard and they should be carefully considered.

Un nombre de sujets concernant la microrobotique numérique ont été abordés dans le cadre de cette the` se. Une nouvelle génération du microrobot numérique ”DiMiBot” a e´ te´ proposé ce qui rend le DiMiBot plus précis, plus contrôlable et plus petit. La nouvelle structure est formée de deux modules multistables seulement, ce qui ajoute des fonctionnalités´ s importantes comme l’augmentation du nombre de positions avec une taille plus réduite et la capacité´ de réaliser des trajectoires complexes dans l’espace de travail. Le principe du nouveau module multistable combine les avantages des microactionneurs pas à pas en termes du principe et du concept numérique en termes de la répétabilité et la robustesse en boucle ouverte. Un mécanisme de positionnement précis, capable de compenser les incertitudes de fabrication a e´ te´ développé et utilise´ pour assurer un positionnement précis. En parallèle, des modèles analytiques ont e´ te´ développés pour les principaux composants dans le DiMiBot: poutres flambées préformées et actionneurs e´ électrothermiques en U. Des méthodes de conception ont été développées par la suite qui permettent de choisir les dimensions optimales garantissant les performances requises en respectant les spécifications et limites de design. Des prototypes de modules multistables, fabrique´ s dans la salle Blanche MIMENTO, ont montré´ un bon Fonctionnement dans les expériences. / A number of topics concerning digital microrobotics were addressed in this thesis. A new generation of the digital microrobot ”DiMiBot” was proposed with several advantages making the DiMiBot more accurate, more controllable and smaller. The new structure consists of only two multistable modules which adds some important features such as increasing the number of positions with smaller size and the ability to realize complex trajectories in the workspace. The principle of the new multistable module combines the advantages of the stepping microactuators in terms of the principle and of the digital concept in terms of the repeatability and robustness without feedback. The accuracy is ensured with an accurate positioning mechanism that compensate the fabrication tolerances. In parallel, analytical models was developed for the main components in the DiMiBot: preshaped curved beams and U-shaped electrothermal actuators. Subsequently, design methods were developed that allow choosing the optimal dimensions that ensure the desired outputs and respecting the design specifications and limitations. Multistable module prototypes, fabricated in the clean room MIMENTO, showed a proper functioning in the experiments.

Large area OLEDs show pronounced Joule self-heating at high brightness. This heating induces brightness inhomogeneities, drastically increasing beyond a certain current level. We discuss this behavior considering 'S'-shaped negative differential resistance upon self-heating, even allowing for 'switched-back' regions where the luminance finally decreases (Fischer et al., Adv. Funct. Mater. 2014, 24, 3367). By using a multi-physics simulation the device characteristics can be modeled, resulting in a comprehensive understanding of the problem. Here, we present results for an OLED lighting panel considered for commercial application. It turns out that the strong electrothermal feedback in OLEDs prevents high luminance combined with a high degree of homogeneity unless new optimization strategies are considered.