This work investigates the challenges associated with designing silicon-germanium (SiGe) analog and mixed-signal circuits capable of operating reliably in extreme environment conditions. Three extreme environment operational conditions, namely, operation over an extremely wide temperature range, operation at extremely low temperatures, and operation under radiation exposure, are considered. As a representative for critical analog building blocks, bandgap voltage reference (BGR) circuit is chosen. Several architectures of the BGRs are implemented in two SiGe BiCMOS technology platforms. The effects of wide-temperature operation, deep cryogenic operation, and proton and x-ray irradiation on the performance of BGRs are investigated. The impact of Ge profile shape on BGR's wide-temperature performance is also addressed. Single-event transient response of the BGR circuit is studied through microbeam experiments. In addition, proton radiation response of high-voltage transistors, implemented in a low-voltage SiGe platform, is investigated. A platform consisting of a high-speed comparator, digital-to-analog (DAC) converter, and a high-speed flash analog-to-digital (ADC) converter is designed to facilitate the evaluation of the extreme environment capabilities of SiGe data converters. Room temperature measurement results are presented and predictions on how temperature and radiation will impact their key electrical properties are provided.

No description available.

<p>This thesis deals with the main aspects in chemical vapordeposition (CVD) of silicon (Si) and silicon-germanium (Si_1-xGe_x) films for high-speed bipolar transistors.<i>In situ</i>doping of polycrystalline silicon (poly-Si)using phosphine (PH₃) and disilane (Si₂H₆) in a low-pressure CVD reactor was investigated toestablish a poly-Si emitter fabrication process. The growthkinetics and P incorporation was studied for amorphous Si filmgrowth. Hydrogen (H) incorporated in the as-deposited films wasrelated to growth kinetics and the energy for H₂desorption was extracted. Film properties such asresistivity, mobility, carrier concentration and grain growthwere studied after crystallization using either furnaceannealing or rapid thermal annealing (RTA). In order tointegrate an epitaxial base, non-selective epitaxial growth(NSEG) of Si and SiGe in a lamp-heated single-waferreduced-pressure CVD reactor was examined. The growth kineticsfor Si epitaxy and poly-Si deposition showed a differentdependence on the deposition conditions i.e. temperature andpressure. The growth rate difference was mainly due to growthkinetics rather than wafer surface emissivity effects. However,it was observed that the growth rate for Si epitaxy and poly-Sideposition was varying during growth and the time-dependencewas attributed to wafer surface emissivity variations. A modelto describe the emissivity effects was established, taking intoconsideration kinetics and the reactor heating mechanisms suchas heat absorption, emission andconduction. Growth ratevariations in opening of different sizes (local loading) andfor different oxide surface coverage (global loading) wereinvestigated. No local loading effects were observed, whileglobal loading effects were attributed to chemical as well astemperature effects. Finally, misfit dislocations formed in theSiGe epitaxy during NSEG were found to originate from theinterface between the epitaxial and polycrystalline regions.The dislocations tended to propagate across the activearea.</p><p><b>Keywords:</b>chemical vapor deposition (CVD), bipolarjunction transistor (BJT), heterojunction bipolar transistor(HBT), silicon-germanium (SiGe), epitaxy, poly-Si emitter,<i>in situ</i>doping, non-selective epitaxy (NSEG), loadingeffect, emissivity effect</p>

<p>Heterojunction bipolar transistors (HBT) based on SiGeC havebeen investigated. Two high-frequency architectures have beendesigned, fabricated and characterized. Different collectordesigns were applied either by using selective epitaxial growthdoped with phosphorous or by non-selective epitaxial growthdoped with arsenic. Both designs have a non-selectivelydeposited SiGeC base doped with boron and a poly-crystallineemitter doped with phosphorous.</p><p>Selective epitaxial growth of the collector layer has beendeveloped by using a reduced pressure chemical vapor deposition(RPCVD) technique. The incorporation of phosphorous and defectformation during selective deposition of these layers has beenstudied. A major problem of phosphorous-doping during selectiveepitaxy is segregation. Different methods, e.g. chemical orthermal oxidation, are shown to efficiently remove thesegregated dopants. Chemical-mechanical polishing (CMP) hasalso been used as an alternative to solve this problem. The CMPstep was successfully integrated in the HBT process flow.</p><p>Epitaxial growth of Si1-x-yGexCy layers for base layerapplications in bipolar transistors has been investigated indetail. The optimization of the growth parameters has beenperformed in order to incorporate carbon substitutionally inthe SiGe matrix without increasing the defect density in theepitaxial layers.</p><p>The thermal stability of npn SiGe-based heterojunctionstructures has been investigated. The influence of thediffusion of dopants in SiGe or in adjacent layers on thethermal stability of the structure has also been discussed.</p><p>SiGeC-based transistors with both non-selectively depositedcollector and selectively grown collector have been fabricatedand electrically characterized. The fabricated transistorsexhibit electrostatic current gain values in the range of 1000-2000. The cut-off frequency and maximum oscillation frequencyvary from 40-80 GHz and 15-30 GHz, respectively, depending onthe lateral design. The leakage current was investigated usinga selectively deposited collector design and possible causesfor leakage has been discussed. Solutions for decreasing thejunction leakage are proposed.</p><p><b>Key words:</b>Silicon-Germanium-Carbon (SiGeC),Heterojunction bipolar transistor (HBT), chemical vapordeposition (CVD), selective epitaxy, non-selective epitaxy,collector design, high-frequency measurement, dopantsegregation, thermal stability.</p>

During the last decade, AlGaN High Electron Mobility Transistors (HEMTs) have been intensively studied because their fundamental electrical properties make them attractive for highpower microwave device applications. Despite much progress, AlGaN HEMTs are far from fully understood and judged by the number of published papers the understanding of advanced structures is even poorer. This work is an exploration of the electrical and structural properties of advanced HEMT structure containing AlN exclusionlayer and double heterojunctions. These small modifications had great impact on the electrical properties. In this work, AlGaN HEMT structures grown on SiC substrates by a hot-wall MOCVD have been characterized for their properties using optical microscopy, scanning electron microscopy, transmission electron microscopy, capacitance/voltage, eddy-current resistivity, and by homebuilt epi-thickness mapping equipment. A high electron mobility of 1700 [cm2/Vs] was achieved in an AlN exclusion-layer HEMT. A similar electron mobility of 1650 [cm2/Vs] was achieved in a combination of a double heterojunction and exclusion-layer structure. The samples had approximately the same electron mobility but with a great difference: the exclusion-layer version gave a sheet carrier density of 1.58*1013 [electrons/cm2] while the combination of double heterojunction and exclusion-layer gave 1.07*1013 [electrons/cm2]. A second 2DEG was observed in most structures, but not all, but was not stable with time. The structures we grew during this work were also simulated using a one-dimensional Poisson-Schrödinger solver and the simulated electron densities were in fairly good agreement with the experimentally obtained. III-nitride materials, the CVD concept, and the onedimensional solver are shortly explained.

No description available.

The material and device characteristics of InGaN/GaN heterojunction bipolar transistors (HBTs) grown by metalorganic chemical vapor deposition are examined. Two structures grown on sapphire with different p-InxGa1-xN base-region compositions, xIn = 0.03 and 0.05, are presented in a comparative study. In a second experiment, NpN-GaN/InGaN/GaN HBTs are grown and fabricated on free-standing GaN (FS-GaN) and sapphire substrates to investigate the effect of dislocations on III-nitride HBT epitaxial structures. The performance characteristics of HBTs on FS-GaN with a 20×20 m2 emitter area exhibit a maximum collector-current density of ~12.3 kA/cm2, a D.C. current gain of ~90, and a maximum differential gain of ~120 without surface passivation. For the development of deep-ultraviolet optoelectronics, several various structures of optically-pumped lasers at 257, 246, and 243 nm are demonstrated on (0001) AlN substrates. The threshold-power density at room temperature was reduced to as low as 297 kW/cm2. The dominating polarization was measured to be transverse electric in all cases. InAlN material was developed to provide lattice matched, high-bandgap energy cladding layers for a III-N UV laser structure. This would alleviate strain and dislocation formation in the structure, and also mitigate the polarization charge. However, a gallium auto-doping mechanism was encountered which prevents the growth of pure ternary InAlN, resulting instead in quaternary InAlGaN. This phenomenon is quantitatively examined and its source is explored.

The present thesis is focused on rational design and synthesis of π-conjugated donoracceptor-donor (D-A-D) type oligomers and D-A type copolymers. Thesis is organized in seven chapters, apart from introduction remaining six chapters are grouped into two parts (A and B). Part A deals with Chapters 2, 3, 4 and Part B contains chapters 5, 6 and 7. A brief discussion on the content of individual chapters is provided below. Chapter 1 discusses the introduction to organic solar cell with operating principles and effect of spinodal decomposition on stability of the devices is presented. The status and literature related to the improvement of life time of the organic solar cells by self-assembly approach has been explored. In addition, design and synthesis of the fluorine substituted π-conjugated organic semiconductors for n-type OFETs and OLED has been discussed. Part A This part of the thesis attempt to address some of the challenges listed below (1) Investigation of miscibility of binary components in bulk heterojunction solar cells through H-bonding approach. (2) Synthesis of new low band gap molecular semiconductors having H-bonding sites. (3) Fabrication of bulk heterojunction solar cell devices using these new molecules and exploring the photovoltaics performance. Chapter 2, donor-acceptor-donor (D-A-D) concept has been employed to design low band gap oligomers named as TTB. Barbiturate functional group has been utilized to explore the concepts of supramolecular chemistry. It is shown that, TTB molecule self-organizes via intermolecular H-bonding between barbituric acid units. Interactions between the oligothiophene subunits were also found to be important, affording nanoribbons that were observed by atomic force and transmission electron microscopy. The applicability of TTB for organic electronic applications was investigated by fabricating organic field-effect transistors (OFETs) and organic photovoltaic device. The crystalline nanoribbons were beneficial in understanding the phase morphology of PCBM and TTB blend. Chapter 3, the self-assemble property of TTB was disrupted by the substitution of methyl group on the nitrogen of the barbituric acid moiety. The optical and electrochemical properties of the new derivative have been investigated by UV-Visible spectroscopy, photoluminescence spectroscopy and cyclic voltammetry. Further investigations on the effect of self-assembly on organic solar cells were carried out by fabricating BHJ and OFET. The results proved that the self-assembly within the donor moieties led to complete phase separation between the donor and acceptor which had an adverse effect on the photovoltaic performance. Chapter 4, the conjugation of TTB was extended by the synthesis of two new copolymers by polymerizing with two oliogothiophene (terthiophene and benzobithiophene) derivatives with different donating strength. The investigation of photophysical and electrochemical properties of copolymers were studied by varying the donating strength. As we increase the donating strength of oligothiophenes, the intramolecular charge transfer band of DA copolymers was red shifted. Further, density functional theory (DFT) calculation of these materials was carried out to get insight into their photophysical properties. Part B This part of the thesis attempt to address some of the challenges listed below (1) Investigation of fluorine substituted organic semiconductos like 2,2’ bithiazole and pheanthroimidazole. (2) Synthesis of pentafluoro phenyl appended derivatives of 2,2’ bithiazole and pheanthroimidazole. (3) Fabrication of OFETs and OLEDs using these new molecules and elucidated the device performance with molecular structure. Chapter 5, pentafluorophenyl appended 2,2’-bithiazole derivatives were synthesized. The single crystal x-ray diffraction studies shows the unusual strong type-II F•••F interactions within the distance of 2.668 Å, at an angle of 89.14° and 174.15°. It also shows the usual type-I F•••F interaction within the distance of 2.825Å, at an angle of 137.38° and 135.93°. Upon bromination type-II Br•••Br interaction was observed and the packing was further stabilized by S•••Br interactions. The conjugation was further extended with different aromatic and heteroaromatic substituents and synthesized the star shaped structure. The band gap as well as the electronic energy levels was tuned by substituting various aromatic and heteroaromatic substituents. These star shaped derivatives shows electron mobilities in the order of 10-4 to 10-3cm2/Vs. Chapter 6, Novel D-A copolymers were synthesized by Stille condensation of electron acceptor fluorinated phenanthroimidazole with electron donors like terthiophene and benzobithiophene. Prior to that insoluble pentafluoro phenyl phenanthroimidazole was Nalkylated in presence of DMF which concurrently resulted in C-F activation of the pentafluoro phenyl moiety. As we increase the donor strength from benzobithiophene to terthiophene the absorbance spectra was red shifted from 446 nm to 482 nm in solution and 455 nm to 484 nm in solid state. The band gap of these copolymers was found to be 2.4 eV for PIBDT and 2.2 eV for PIDHTT from the absorbance spectra. The photoluminescence data shows that these materials are promising for the yellow colour as well as orange colour displays, of narrow wavelength range (FWHM 40 nm for PIBDT and 35 nm for PIDHTT), which can be achieved just by the manipulation of donor moieties in the copolymers. The preliminary electroluminiscence data shows high brightness of 888cd/m2 (orange luminescence) for PIDHTT and 410cd/m2 (yellow luminescence) for PIBDT. Chapter 7, Acenaphtho[1,2-b]quinoxaline based donor–acceptor type low band gap conjugated copolymers were synthesized by Stille coupling reaction with the corresponding oligothiophene derivatives. The optical properties of the copolymers were characterized by ultraviolet-visible spectrometry while the electrochemical properties were determined by cyclic voltammetry. The band gap of these polymers was found to be in the range of 1.8-2.0 eV as calculated from the optical absorption band edge. The intense charge transfer band in absorption spectra shows the significant effect of acceptor in the copolymers. X-ray diffraction measurements show weak π–π stacking interactions between the polymer chains. The OFET devices fabricated using these co-polymers showed dominant p-channel transistor behavior with the highest mobility of 1×10-3cm2/Vs.

The present work investigates the technology development of state-of-the-art SiGe and SiGeC Heterojunction Bipolar Transistors (HBT) by means of technology computer aided design (TCAD). The objective of this work is to obtain an advanced HBT very close to the real device not only in its process fabrication steps, but also in its physical behavior, geometric architecture, and electrical results. This investigation may lead to achieve the best electrical performances for the devices studied, in particular a maximum operating frequency of 500 GHz. The results of this work should help to obtain more physical and realistic simulations, a better understanding of charge transport, and to facilitate the development and optimization of SiGe and SiGeC HBT devices.The TCAD simulation kits for SiGe/SiGeC HBTs developed during our work have been carried out in the framework of the STMicroelectronics bipolar technology evolution. In order to achieve accurate simulations we have used, developed, calibrated and implemented adequate process models, physical models and extraction methodologies. To our knowledge, this work is the first approach developed for SiGe/SiGeC HBTs which takes into account the impact of the strain, and of the germanium and carbon content in the base, for both: process and electrical simulations.In this work we will work with the successive evolutions of B3T, B4T and B5T technologies. For each new device fMAX improves of 100 GHz, thus the technology B3T matches to 300 GHz, B4T and B5T to 400 and 500 GHz, respectively.Chapter one introduces the SiGe SiGeC heterojunction bipolar technologies and their operating principles. This chapter deals also with the high frequency AC transistor operation, the extraction methods for fMAX and the carrier transport in extremely scaled HBTs.Chapter two analyzes the physical models adapted to SiGeC strained alloys used in this work and the electrical simulation of HBT devices. This is also an important work of synthesis leading to the selection, implementation and development of dedicated models for SiGeC HBT simulation.Chapter three describes the B3T TCAD simulation platform developed to obtain an advanced HBT very close to the real device. In this chapter the process fabrication of the B3T technology is described together with the methodology developed to simulate advanced HBT SiGeC devices by means of realistic TCAD simulations.Chapter four describes the HBT architectures developed during this work. We will propose low-cost structures with less demanding performance requirements and highly performing structures but with a higher cost of production. The B4T architecture which has been manufactured in clean-room is deeply studied in this chapter. The impact of the main fabrication steps is analyzed in order to find the keys process parameters to increase fMAX without degrading other important electrical characteristics. At the end of this chapter the results obtained is used to elaborate a TCAD simulation platform taking into account the best trade-off of the different key process parameters to obtain a SiGeC HBT working at 500 GHz of fMAX.

Recently, several SiGe HBT devices fabricated on CMOS-compatible silicon on insulator (SOI) substrates (SiGe HBTs-on-SOI) have been demonstrated, combining the well-known SiGe HBT performance with the advantages of SOI substrates. These new devices are especially interesting in the context of extreme environments - highly challenging surroundings that lie outside commercial and even military electronics specifications. However, fabricating HBTs on SOI substrates instead of traditional silicon bulk substrates requires extensive modifications to the structure of the transistors and results in significant trade-offs. The present work investigates, with measurements and TCAD simulations, the performance and reliability of SiGe heterojunction bipolar transistors fabricated on silicon on insulator substrates with respect to operation in extreme environments such as at extremely low or extremely high temperatures or in the presence of radiation (both in terms of total ionizing dose and single effect upset).