In this work, stretchable magnetic sensorics is successfully established by combining metallic thin films revealing a giant magnetoresistance effect with elastomeric materials. Stretchability of the magnetic nanomembranes is achieved by specific morphologic features (e.g. wrinkles), which accommodate the applied tensile deformation while maintaining the electrical and magnetic integrity of the sensor device. The entire development, from the demonstration of the world-wide first elastically stretchable magnetic sensor to the realization of a technology platform for robust, ready-to-use elastic magnetoelectronics with fully strain invariant properties, is described. The prepared soft giant magnetoresistive devices exhibit the same sensing performance as on conventional rigid supports, but can be stretched uniaxially or biaxially reaching strains of up to 270% and endure over 1,000 stretching cycles without fatigue. The comprehensive magnetoelectrical characterization upon tensile deformation is correlated with in-depth structural investigations of the sensor morphology transitions during stretching. With their unique mechanical properties, the elastic magnetoresistive sensor elements readily conform to ubiquitous objects of arbitrary shapes including the human skin. This feature leads electronic skin systems beyond imitating the characteristics of its natural archetype and extends their cognition to static and dynamic magnetic fields that by no means can be perceived by human beings naturally. Various application fields of stretchable magnetoelectronics are proposed and realized throughout this work. The developed sensor platform can equip soft electronic systems with navigation, orientation, motion tracking and touchless control capabilities. A variety of novel technologies, like smart textiles, soft robotics and actuators, active medical implants and soft consumer electronics will benefit from these new magnetic functionalities.

Submitted by OSWALDO NUNES NETO null (netfisic@fc.unesp.br) on 2016-08-13T20:37:55Z No. of bitstreams: 1 Tese_Doutorado_Oswaldo.pdf: 4276326 bytes, checksum: e73a2086ffde0d12d2f5875fb168f8c1 (MD5) / Approved for entry into archive by Ana Paula Grisoto (grisotoana@reitoria.unesp.br) on 2016-08-16T14:27:21Z (GMT) No. of bitstreams: 1 nunesneto_o_dr_bauru.pdf: 4276326 bytes, checksum: e73a2086ffde0d12d2f5875fb168f8c1 (MD5) / Made available in DSpace on 2016-08-16T14:27:21Z (GMT). No. of bitstreams: 1 nunesneto_o_dr_bauru.pdf: 4276326 bytes, checksum: e73a2086ffde0d12d2f5875fb168f8c1 (MD5) Previous issue date: 2016-04-28 / Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) / Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) / Materiais e dispositivos baseados em compostos orgânicos desempenham um importante papel em diversas áreas da aplicação tecnológica devido às suas interessantes propriedades eletro-magneto- ópticas, adicionadas às suas características mecânicas únicas, facilidade de processamento, versatilidade de síntese e baixo custo relativo. Apesar do proeminente campo de aplicação destes materiais, muitos aspectos associados à sua ciência básica são ainda pouco compreendidos. Nesse cenário destaca-se o fenômeno de Magnetoresistência Orgânica (OMAR, da sigla em inglês). Tal fenômeno encontra-se associado a variações significativas da condutividade elétrica de dispositivos orgânicos induzidas por pequenos campos magnéticos externos em temperatura ambiente e tem sido observado em diversificados materiais poliméricos e moleculares. No presente trabalho avaliou-se o fenômeno de OMAR apresentado por um Diodo Emissor de Luz baseado na molécula de Alq3. Medidas de Espectroscopia de Impedância Elétrica na presença de um Campo Magnético estático externo (EIE-CM) foram realizadas sobre o referido dispositivo para diferentes temperaturas. Métodos diferenciados de aquisição e manipulação de dados foram empregados a fim de remover a dependência temporal dos sinais tipicamente observados. Os seguintes Efeitos de Campo Magnético (MFE, da sigla em inglês) foram observados sobre a resposta elétrica do dispositivo: (i) redução de cerca de 1% na resistência, efeito praticamente constante para todo o espectro de frequência e; (ii) variações significativas na capacitância, com intensificação do efeito de Capacitância Negativa em baixas frequências. Como suporte para a interpretação dos resultados experimentais foram realizadas simulações empregando-se duas abordagens: Circuitos Equivalentes e Análise de perturbações de pequenos sinais (em inglês, Small Signal Analysis ) via soluções numéricas das equações de transporte de Boltzmann numa aproximação por Drift-Diffusion empregando-se dispositivos simplificados. As análises sugerem que os MFE evidenciados podem estar associados a um aumento da mobilidade efetiva dos portadores de carga e a uma redução na taxa de recombinação bimolecular no dispositivo. Os resultados foram interpretados em termos dos modelos atualmente aceitos para o fenômeno de OMAR. Esta tese também apresenta um estudo de processos de geração e transferência de carga em corantes Cianinas, materiais promissores para aplicações em células solares com absorção no infravermelho. Técnicas de Ressonância de Spin Eletrônico induzida por Luz foram empregadas em blendas destes corantes com o polímero MEH-PPV e com o fulereno (C60) a fim de avaliar, respectivamente, o caráter aceitador e doador de elétrons das Cianinas. / Materials and devices based on organic compounds play an important role in various technological applications, mainly due to their interesting electrical-magneto-optical properties combined with their unique mechanical properties, easy processing, versatility of synthesis and relatively low cost. Despite the prominent application field of these materials many aspects associated with their basic science are still not well understood. In this context the Organic Magnetoresistance phenomenon (OMAR) deserves to be highlighted. This phenomenon is associated with significant changes in the electrical conductivity of organic devices induced by the presence of small external magnetic fields at room temperature, being observed in various polymeric and molecular materials. In this study we have investigated the OMAR phenomenon in Alq3-based OLEDs. Electrical impedance spectroscopy technique in the presence of an external static magnetic field (EIS-MF) was employed in the experiments; distinct temperatures were considered. Differentiated methods of acquisition and data manipulation were employed to remove the typically observed signal time dependence. The following magnetic field effects (MFE) were observed on the electrical response of the device: (i) a constant reduction of around 1% in the resistance over the entire frequency spectrum and; (ii) significant changes in the capacitance followed by an intensification of the negative capacitance effect at low frequencies. Simulations employing two different approaches were carried out for the interpretation of the experimental results: (i) Equivalent Circuits and (ii) Small Signal Analysis via numerical solutions of the Boltzmann transport equations by Drift-Diffusion approach. The results suggest that the observed MFE can be associated with an increase in the effective mobility of the charge carriers and a reduction in the bimolecular recombination rate in the device. The results were interpreted in terms of the currently accepted models for the OMAR phenomenon. This thesis also presents a study about generation and charge transfer processes in cyanine dyes (near infrared absorbing compounds) which are promising materials for applications in solar cells. Light induced Electron Spin Resonance (L-ESR) technique was employed to study the presence/formation of paramagnetic centers in blends of these dyes with MEH-PPV polymer and fullerene (C60) to evaluate, respectively, the electron acceptor and donor character of cyanine dyes. / FAPESP: 2011/21830-6 / CNPq: 204432/2013-8

This master's thesis focuses on the utilization of an artificially created weak magnetic field for navigation in 3D space. The theoretical part of this work deals with the general properties of the magnetic field and with its description. The next section of the theoretical part contains an overview of measuring principles for magnetic field measurements. Based on various types of measuring principles, the thesis elaborates on commercially available miniature sensors for magnetic field measurement with a measuring range up to 10 mT. The work focuses mainly on the magnetoresistive principle and fluxgate sensors. Furthermore, the theoretical part contains descriptions of methods for modeling the magnetic field of simple permanent magnets and various magnet assemblies. Lastly, the theoretical part involves a patent search of devices used for locating magnets that are installed in an intramedullary nail, which is used in intramedullary stabilization used on fractures of human bones. By locating the magnet in the nail, it is possible to precisely determine the position of the mounting holes. The practical part of the thesis deals with the analysis of magnetic field behavior in the vicinity of various magnetic assemblies, which were modeled in COMSOL Multiphysics using the finite element method. The models were created with the aim of analysing the behaviour of the magnetic field in the vicinity of the magnets and at the same time to find possible analytical functions that could be used to determine the position of the magnet in space relative to the probe. The result of this work is an analysis of various assemblies, which contains graphs of different dependencies and prescription of polynomial functions that approximate these dependencies. Another part of the thesis is the design of a probe that serves to locate the magnetic target. The work describes two possible methods of localization. For the differential method, a user interface in LabVIEW was created. The probe based on this method is fully capable of locating the magnet in the 2D plane. The state space search method is described only in theory.

Es werden ab-initio Rechnungen des Supermagnetwiderstands-Effektes von Fe/Cr-Multilagen vorgestellt. Die Elektronenstruktur wurde im Rahmen einer LCAO-Superzellen-Rechnung bestimmt. Als Störung der idealen Schichtstruktur wurden Cr-Defekte in Fe angenommen, die durch spinabhängige Relaxationszeiten beschrieben werden. Die elektrischen Transportkoeffizienten wurden durch Lösung der linearisierten Boltzmann-Gleichung in Relaxationszeitnäherung unter Verwendung des Mott-schen Zweistrommodells berechnet. Bei den betrachteten Systemen variierte die Dicke der Fe-Schicht zwischen 3 und 9 Monolagen, die der Cr-Schicht zwischen 1 und 13 Monolagen. In Abhängigkeit von der Fe- bzw. Cr-Schichtdicke ergeben sich in Übereinstimmung mit den Experimenten charakteristische Oszillationen des Supermagnetwiderstandes. Es wird der Einfluß der Spinanisotropie der Streuung auf den Effekt untersucht. Insbesondere kann gezeigt werden, daß der Effekt auch für spinunabhängige Streuung existiert. / Ab-initio calculations of the Giant Magnetoresistance (GMR) for Fe/Cr multilayers are presented. The electronic structure of the Fe/Cr superlattice is calculated within an optimized LCAO scheme using the local spin density approximation. The scattering of the electrons by Cr impurities in an Fe environment is taken into account by spin dependent relaxation times. The transport is described quasiclassically by solving the linearized Boltzmann equation in relaxation time approximation. In agreement with experiments characteristic oscillations of the GMR are obtained in dependence on the Cr and Fe layer thickness. It can be shown, that the GMR can be reduced or increased by the spin anisotropy of the scattering, but the phenomenon still exists for spin-independent scattering.

The thesis is dealing with the investigation of charge and orbital order and their behaviour under external pressure. Therefore, a new pressure cell has been developed which allows the observation of superlattice reflections corresponding to the order phenomena under pressure using scattering of high-energy synchrotron radiation. The maximum pressure that can be reached is 1.25 GPa. Until today there has been no possibility to conduct such studies of charge and orbital order superlattice reflections under pressure using x-ray scattering. The intensities of the reflections of the single crystalline samples are quite weak compared to fundamental peaks. Therefore the measurements are strongly affected by the absorption of the radiation in the pressure cell itself. Further difficulties result from the facts that low temperatures are needed and the sample has to be oriented in reciprocal space after being mounted into the cell. Therefore, the design of a compact clamp-type piston pressure cell was chosen here. The cell is made from a copper-beryllium alloy with the wall thickness reduced in the height of the sample volume. This allows the usage inside a closed-cycle cryostat mounted on a three-axis-diffractometer. Absorption effects are minimized due to the combination of reduced wall thickness and the usage of high energy synchrotron radiation (E = 100 keV at the beamline BW5 at HASYLAB/DESY). The new experimental technique was established and used for a study of two representatives of the transition metal oxide compounds, i.e. doped cuprates and manganites, which belong to the class of strongly correlated electron systems. The 1/8-doped cuprate La_{2-x}Ba_{x}CuO_{4} reveals an ordered state at low temperatures. Inside the CuO_{2} planes a combined order of charge stripes and antiferromagnetic spin stripes is observed. The ordering results from the interaction between charge, spin and lattice degrees of freedom. Here the lattice degrees of freedom play a major role. Particularly, a structural transition from an orthorhombic to a tetragonal symmetry is prerequisite for the observation of the ordered state. The cell constructed in this work allows a more exact analysis of the coupling between the crystal lattice and the formation of the charge and spin ordered phase. The manganite system Pr_{0.7}(Ca_{0.9}Sr_{0.1})_{0.3}MnO_{3} shows a strong magnetoresistive effect, called colossal magnetoresistance (CMR). In this system, several ordered phases can be found, which exhibit charge, spin and - since the orbital degree of freedom is also present in the manganites - additionally orbital ordering phenomena. In particular, an antiferromagnetically spin ordered insulating phase, which is connected to a charge- and orbital ordered state competes with a ferromagnetic metallic phase. This competition leads to a phase separation, which determines the properties of the sample. Both phases are strongly coupled to the lattice degrees of freedom, so that application of external pressure drastically affects the interplay between the different phases and allows a detailed study of the relation between the charge and orbital ordered phase and the crystal structure. / Die vorliegende Arbeit befaßt sich mit dem Studium der Ordnungszustände von Ladungen und Orbitalen und deren Beeinflußung durch externen Druck. Als experimentelle Neuentwicklung wurde dafür eine Druckzelle entworfen, mit deren Hilfe die Beobachtung der jeweiligen Ordnungsphänomene unter Druck mittels der Streuung hochenergetischer Synchtrotronstrahlung möglich ist. Die Zelle erlaubt die Messung der orbitalen und Ladungsüberstrukturreflexe, welche aus den geordneten Zuständen resultieren, in einem Druckbereich bis 1.25 GPa. Die experimentelle Herausforderung ergibt sich hierbei aus der Tatsache, dass die Überstrukturreflexe im Vergleich zu den fundamentalen Reflexen der einkristallinen Proben sehr schwach sind und zusätzlich durch die Absorption im Mantelmaterial der Druckzelle stark beeinträchtigt werden. Darüber hinaus soll die Zelle bei tiefen Temperaturen einsetzbar und die Probe auch innerhalb der Zelle im reziproken Raum orientierbar sein. Bei dem hier realisierten Ansatz wurde für das Design daher der Typ einer kompakten Klemmdruckzelle aus einer Kupfer-Beryllium-Legierung gewählt, deren Zellwände im Bereich des Probenvolumens reduziert wurden. Dadurch ist der Einsatz der Zelle im Inneren eines Closed-Cycle-Kryostaten auf einem Einkristall-Diffraktometer möglich. Aufgrund der geringen Wandstärke der Zelle und der Nutzung von hochenergetischer Röntgenstrahlung (E = 100 keV am Messplatz BW5 des HASYLAB/DESY) werden Absorptionseffekte minimiert. Die neue Messmethode wurde im Rahmen der Arbeit etabliert und zur Untersuchung zweier wichtiger Übergangsmetalloxidverbindungen (dotierte Kuprate, Manganate), die zur Klasse der stark korrelierten Elektronensysteme gehören, eingesetzt. Das 1/8-dotierte Kupratsystem La_{2-x}Ba_{x}CuO_{4}, weist bei tiefen Temperaturen einen statisch geordneten Zustand auf. Innerhalb der CuO_{2}-Schichten des Kristalls ergibt sich eine Ordnung, bei der sich Streifen lokalisierter Löcher und antiferromagnetische Bereiche abwechseln. Ursache dieses Zustands ist das Wechselspiel von Ladungen, Spins und strukturellen Freiheitsgraden. Dabei spielen letztere eine herausgehobene Rolle. So ist insbesondere ein struktureller Übergang von einer orthorhombischen zu einer tetragonalen Phase Voraussetzung für die Beobachtung der Ordnung. Die in dieser Arbeit aufgebaute Druckzelle erlaubt eine genauere Analyse des Zusammenhangs zwischen Struktur des Kristalls und der Ausbildung der ladungs- und spingeordneten Phase. Das Manganatsystem Pr_{0.7}(Ca_{0.9}Sr_{0.1})_{0.3}MnO_{3}, zeichnet sich durch einen sehr starken magnetoresistiven Effekt aus, der auch als kolossaler Magnetowiderstand (CMR) bezeichnet wird. Auch hier kann bei tiefen Temperaturen eine geordnete Phase beobachtet werden. Allerdings spielt in diesem System zusätzlich der orbitale Freiheitsgrad der Elektronen eine entscheidende Rolle, so dass sich eine kombinierte Ladungs- und Orbitalordnung ergibt. Diese Phase, die isolierend und zusätzlich antiferromagnetisch geordnet ist, steht im direkten Wettbewerb zu einer ferromagnetischen Phase. Aus dieser Konkurrenz ergibt sich eine Tendenz zur Phasenseparation, deren Effekte die Eigenschaften des Kristalls dominieren. Da beide Phasen stark an die strukturellen Freiheitsgrade gekoppelt sind, läßt sich das Gleichgewicht zwischen ihnen durch externen Druck beeinflussen und die Abhängigkeit der ladungs- und orbitalgeordneten Phase von den strukturellen Eigenschaften des Kristalls im Detail untersuchen.

The aim of the present work was to develop a detailed picture of the electronic and magnetic properties of a number of interesting transition metal compounds. A number of complementary experimental and theoretical techniques have been applied, special emphasis was given to x-ray spectroscopies. The studies led to a number of results, and the following conclusions can be drawn: The influence of the magnetic ground state (high-spin (FeO) vs. low-spin (FeS2)) with respect to the recorded x-ray spectra was investigated. In particular, by performing RXES on the Fe L edge of the two compounds, very different ratios of La / Lβ integrated intensity for excitation energies close to the L2 edge have been observed. This effect has been explained in terms of the magnetic structure of FeO (high spin), which inhibits Coster-Kronig processes. Special attention has been given to the direct investigation of orbital ordering in a three dimensional CMR manganite, namely La7/8Sr1/8MnO3, by means of x-ray linear dichroism (XLD). We obtained, for the first time, rather strong indications that the coherently distorted Jahn-Teller phase in La7/8Sr1/8MnO3 is accompanied by a predominantly cross type (x2-z2) / (y2-z2) orbital ordering. In addition to manganites the double perovskite Sr2FeMoO6 the combined study by means of x-ray spectroscopies, magnetic measurements and theoretical band structure calculations could resolve some points discussed controversially in the literature. Both, paramagnetic measurements as well as core level spectroscopy of the Fe 2p, Fe 3s and the Mo 3d states suggest a mixed iron valence state involving around 30% Fe3+- Mo5+ and 70% Fe2+ - Mo6+ states in highly ordered Sr2FeMoO6. XPS valence band studies reveal that the Fe 3d states are not extremely localized, and we find evidence that charge transfer between Fe 3d and O 2p states plays an essential role.

No description available.

The present thesis is about the investigation of ferromagnetic thin film systems with respect to exchange coupling, magnetization reversal behavior and effects appearing in magnetic heterostructures, namely the exchange bias and the giant magnetoresistance effect. For this purpose, DC magnetron sputtered thin films and multilayers with perpendicular magnetic anisotropy were prepared on single crystalline and rigid as well as flexible amorphous substrates. The first part concentrates on magnetic data storage applications based on the combination of the concept of bit patterned media and three dimensional magnetic memory, consisting of at least two exchange decoupled ferromagnetic storage layers. Here, [Co/Pt] multilayers, revealing different magnetic anisotropies, have been applied as storage layers and as spacer material Pt and Ru was employed. By the characterization of the magnetization reversal behavior the exchange coupling in dependence of the spacer layer thickness was studied. Furthermore, with regard to the concept of bit patterned media, the layers were also grown on self-assembled silica particles, leading to an exchange decoupled single-domain magnetic dot array, which was studied by magnetic force microscope imaging and angular dependent magneto-optic Kerr effect magnetometry to evaluate the reversal mechanism and its dependence on the array dimensions, mainly the diameter of the silica particles and layer thicknesses. To complete the study, micromagnetic simulations were performed to access smaller dimensions and to investigate the dependence of intralayer as well as interlayer coupling on the magnetization reversal of the dot array with multiple storage layers. The second part focuses on the investigation of the giant magnetoresistance effect in systems with perpendicular magnetic anisotropy, where L10 -chemically ordered FePt alloys and [Co/Pt] as well as [Co/Pd] multilayers were utilized. In case of FePt, where high temperatures during the deposition are necessary to induce the chemical ordering, diffusion and alloying of the spacer material often prevent a sufficient exchange decoupling of the ferromagnetic layers. However, with Ru as spacer material a giant magnetoresistance effect could be achieved. Large improvements of the magnetoresistive behavior of such trilayer structures are presented for [Co/Pt] and [Co/Pd] multilayers, which can be deposited at room temperature not limiting the choice of spacer as well as substrate material. Furthermore, in systems consisting of one ferromagnet with perpendicular magnetic anisotropy and one ferromagnet with in-plane magnetic easy axis, a linear and almost hysteresis-free field dependence of the electrical resistance was observed and the behavior for various thickness series has been intensively studied. Finally, the corrosion resistance in dependence of the capping layer material as well as the magnetoresistance of a strained flexible pseudo-spin-valve structure is presented. In addition, in chapter 2.5.2 an experimental study of an improved crystal growth of FePt at comparable low temperatures by molecular beam epitaxy and further promoted by a surfactant mediated growth using Sb is shown. Auger electron spectroscopy as well as Rutherford backscattering spectrometry were carried out to confirm the surface segregation of Sb and magnetic characterization revealed an increase of magnetic anisotropy in comparison to reference layers without Sb. / Die vorliegende Dissertation beschäftigt sich mit der Untersuchung ferromagnetischer Dünnschichtsysteme im Hinblick auf die Austauchkopplung, das Ummagnetisierungsverhalten und Effekte wie z.B. den Exchange Bias Effekt oder den Riesenmagnetwiderstandseffekt (GMR), welche in derartigen Heterostrukturen auftreten können. Die Probenpräparation erfolgte mittels DC Magnetronsputtern, wobei auf einkristallinen aber auch flexiblen sowie starren amorphen Substraten abgeschieden wurde. Im ersten Teil der Arbeit werden Untersuchungen mit dem Hintergrund einer Anwendung als magnetischer Datenträger vorgestellt. Konkret werden hier die Konzepte Bit Patterned Media (BPM) und 3D Speicher miteinander kombiniert. Letzteres Konzept basiert auf der Verwendung wenigstens zweier austauschentkoppelter ferromagnetischer Schichten, für welche [Co/Pt] Multilagen mit unterschiedlicher magnetischer Anisotropie verwendet wurden. Als Zwischenschichtmaterial diente Pt und Ru. Durch die Charakterisierung des Ummagnetisierungsverhaltens wurde die Austauschkopplung in Abhängigkeit der Zwischenschichtdicke untersucht. Darüber hinaus wurden jene Schichtstapel zur Realisierung des BPM-Konzeptes auf selbstangeordnete SiO2 Partikel mit unterschiedlichen Durchmessern aufgebracht, durch welche sich lateral austauschentkoppelte, eindomänige magnetische Nanostrukturen erzeugen lassen. Zur Untersuchung des Ummagnetisierungsverhaltens und der jeweiligen Größenabhängigkeiten (maßgeblich Durchmesser und Schichtdicke) wurden diese mittels Magnetkraftmikroskopie sowie winkelabhängiger magnetooptischer Kerr Effekt Magnetometrie untersucht. Zur weiteren Vertiefung des Verständnisses noch kleinerer Strukturgrößen erfolgten mikromagnetische Simulationen, bei denen die magnetischen Wechselwirkungen lateral (benachbarte 3D Elemente) als auch vertikal (Wechselwirkungen ferromagnetischer Schichten innerhalb eines 3D Elementes) im Interesse standen, sowie deren Auswirkungen auf das Ummagnetisierungsverhalten des gesamten Feldes. Der Fokus des zweiten Teils liegt auf der Untersuchung des Riesenmagnetwiderstandseffektes in Systemen mit senkrechter Sensitivität. Dafür sind ferromagnetische Schichten mit senkrechter magnetischer Anisotropie nötig, wobei hier die chemisch geordnete L10-Phase der FePt Legierung und [Co/Pt] sowie [Co/Pd] Multilagen Anwendung fanden. Für eine chemische Ordnung der FePt Legierung sind hohe Temperaturen während der Schichtabscheidung notwendig, welche eine hinreichende Austauschentkopplung beider ferromagnetischer Schichten meist nicht gewährleisten. Grund dafür sind einsetzende Diffusionsprozesse als auch Legierungsbildungen mit dem Zwischenschichtmaterial. In der vorliegenden Arbeit konnte der GMR Effekt daher ausschließlich mit einer Ru Zwischenschicht in FePt basierten Trilagensystemen nachgewiesen und charakterisiert werden. Enorme Verbesserungen der magnetoresistiven Eigenschaften werden im Anschluss für [Co/Pt] und vor allem [Co/Pd] Multilagen vorgestellt. Diese Schichtsysteme mit senkrechter magnetischer Anisotropie können bei Raumtemperatur präpariert werden und stellen daher keine weiteren Anforderungen an das Zwischenschichtmaterial sowie die verwendeten Substrate. Hier wurden neben Systemen mit ausschließlich senkrechter magnetischer Anisotropie auch Systeme mit gekreuzten magnetischen Anisotropien intensiv untersucht, da diese durch einen linearen und weitgehend hysteresefreien R(H) Verlauf imHinblick auf Sensoranwendungen enorme Vorteile bieten. Letztendlich wurde die Korrosionsbeständigkeit in Abhängigkeit des Deckschichtmaterials als auch die mechanische Belastbarkeit von auf flexiblen Substraten abgeschiedenen GMR-Schichtstapeln untersucht. Zusätzlich wird in Kapitel 2.5.2 eine experimentelle Studie zum Surfactant-gesteuerten Wachstum der FePt Legierung mittels Molekularstrahlepitaxie vorgestellt. Als Surfactant dient Sb, wodurch die Kristallinität bei geringer Depositionstemperatur deutlich verbessert werden konnte. Die Oberflächensegregation von Sb wurde mittels Auger Elektronenspektroskopie und Rutherford Rückstreuspektrometrie verifiziert und die Charakterisierung magnetischer Eigenschaften belegt einen Anstieg der magnetischen Anisotropieenergie im Vergleich zu Referenzproben ohne Sb.

In this work, stretchable magnetic sensorics is successfully established by combining metallic thin films revealing a giant magnetoresistance effect with elastomeric materials. Stretchability of the magnetic nanomembranes is achieved by specific morphologic features (e.g. wrinkles), which accommodate the applied tensile deformation while maintaining the electrical and magnetic integrity of the sensor device. The entire development, from the demonstration of the world-wide first elastically stretchable magnetic sensor to the realization of a technology platform for robust, ready-to-use elastic magnetoelectronics with fully strain invariant properties, is described. The prepared soft giant magnetoresistive devices exhibit the same sensing performance as on conventional rigid supports, but can be stretched uniaxially or biaxially reaching strains of up to 270% and endure over 1,000 stretching cycles without fatigue. The comprehensive magnetoelectrical characterization upon tensile deformation is correlated with in-depth structural investigations of the sensor morphology transitions during stretching. With their unique mechanical properties, the elastic magnetoresistive sensor elements readily conform to ubiquitous objects of arbitrary shapes including the human skin. This feature leads electronic skin systems beyond imitating the characteristics of its natural archetype and extends their cognition to static and dynamic magnetic fields that by no means can be perceived by human beings naturally. Various application fields of stretchable magnetoelectronics are proposed and realized throughout this work. The developed sensor platform can equip soft electronic systems with navigation, orientation, motion tracking and touchless control capabilities. A variety of novel technologies, like smart textiles, soft robotics and actuators, active medical implants and soft consumer electronics will benefit from these new magnetic functionalities.:Outline List of abbreviations 7 1. INTRODUCTION 1.1 Motivation and scope of this work 8 1.1.1 A brief review on stretchable electronics 8 1.1.2 Stretchable magnetic sensorics 10 1.2 Technological approach 11 1.3 State-of-the-art 12 2. THEORETICAL BACKGROUND 2.1 Magnetic coupling phenomena in layered structures 14 2.1.1 Magnetic interlayer exchange coupling 14 2.1.2 Exchange bias 15 2.1.3 Orange peel coupling 16 2.2 Giant magnetoresistance 17 2.2.1 Electronic transport through ferromagnets 17 2.2.2 The GMR effect 19 2.2.3 GMR multilayers 20 2.2.4 Spin valves 21 2.3 Theory of elasticity 22 2.3.1 Elastomeric materials 22 2.3.2 Stress and strain 23 2.3.3 Rubber elasticity 25 2.3.4 The Poisson effect 26 2.3.5 Viscoelasticity 27 2.3.6 Bending strain in a stiff film on a flexible support 27 2.4 Approaches to stretchable electronic systems 28 2.4.1 Microcrack formation 28 2.4.2 Meanders and compliant patterns 29 2.4.3 Surface wrinkling 30 2.4.4 Rigid islands 32 3. METHODS & MATERIALS 3.1 Sample fabrication 34 3.1.1 Polydimethylsiloxane (PDMS) 34 3.1.2 PDMS film preparation 35 3.1.3 Lithographic structuring on the PDMS surface. 36 3.1.4 Magnetic thin film deposition 38 3.1.5 GMR layer stacks 40 3.1.6 Mechanically induced pre-strain 43 3.1.7 Methods and materials for the direct transfer of GMR sensors 45 3.1.8 Materials used for imperceptible GMR sensors 47 3.2 Characterization 48 3.2.1 GMR characterization setup with in situ stretching capability 48 3.2.2 Sample mounting 50 3.2.3 Electrical contacting of stretchable sensor devices 51 3.2.4 Customized demonstrator electronics 52 3.2.5 Microscopic investigation techniques 53 4. RESULTS & DISCUSSION 4.1 GMR multilayer structures on PDMS 54 4.1.1 Pre-characterization 54 4.1.2 Thermally induced wrinkling 55 4.1.3 Self-healing effect 57 4.1.4 Demonstrator: Magnetic detection on a curved surface 60 4.1.5 Sensitivity enhancement 61 4.1.6 GMR sensors in circumferential geometry 64 4.1.7 Stretchability test 67 4.2 Stretchable spin valves 69 4.2.1 Random wrinkles and periodic fracture 70 4.2.2 GMR characterization 73 4.2.3 Stretching of spin valves 74 4.2.4 Microcrack formation mechanism 76 4.3 Direct transfer printing of GMR sensorics 81 4.3.1 The direct transfer printing process 82 4.3.2 Direct transfer of GMR microsensor arrays 84 4.3.3 Direct transfer of compliant meander shaped GMR sensors 86 4.4 Imperceptible magnetoelectronics 89 4.4.1 GMR multilayers on ultra-thin PET membranes 89 4.4.2 Imperceptible GMR sensor skin 92 4.4.3 Demonstrator: Fingertip magnetic proximity sensor 93 4.4.4 Ultra-stretchable GMR sensors 94 4.4.5 Biaxial stretchability 99 4.4.6 Demonstrator: Dynamic detection of diaphragm inflation 101 5. CONCLUSIONS & OUTLOOK 5.1 Achievements 102 5.2 Outlook 104 5.2.1 Further development steps 104 5.2.2 Prospective applications. 105 5.3 Technological impact: flexible Bi Hall sensorics 106 5.3.1 Application potential 106 5.3.2 Thin and flexible Hall probes 107 5.3.3 Continuative works and improvements 108 5.4 Activities on technology transfer and public relations 108 Appendix References 110 Selbständigkeitserklärung 119 Acknowledgements 120 Curriculum Vitae 121 Scientific publications, contributions, patents, grants & prizes 122

In dieser Arbeit werden das Wachstum mittels Molekularstrahlepitaxie und die Eigenschaften der Ferromagneten Fe und Fe_3Si auf niedrig-symmetirschen GaAs(113)A-Substraten studiert. Drei wichtige Aspekte werden untersucht: (i) Wachstum und strukturelle Charakterisierung, (ii) magnetische Eigenschaften und (iii) Magnetotransporteigenschaften der Fe und Fe_3Si Schichten auf GaAs(113)A-Substraten. Das Wachstum der Fe- und Fe_3Si-Schichten wurde bei einer Wachstumstemperatur von = bzw. 250 °C optimiert. Bei diesen Wachstumstemperaturen zeigen die Schichten eine hohe Kristallperfektion und glatte Grenz- und Oberflächen analog zu [001]-orientierten Schichten. Weiterhin wurde die Stabilität der Fe_(3+x)Si_(1-x) Phase über einen weiten Kompositionsbereich innerhalb der Fe_3Si-Stoichiometry demonstriert. Die Abhängigkeit der magnetischen Anisotropie innerhalb der Schichtebene von der Schichtdicke weist zwei Bereiche auf: einen Beresich mit dominanter uniaxialer Anisotropie für Fe-Schichten = 70 MLs. Weiterhin wird eine magnetische Anisotropie senkrecht zur Schichtebene in sehr dünnen Schichten gefunden. Der Grenzflächenbeitrag sowohl der uniaxialen als auch der senkrechten Anisotropiekonstanten, die aus der Dickenabhängigkeit bestimmt wurden, sind unabhängig von der [113]-Orientierung und eine inhärente Eigenschaft der Fe/GaAs-Grenzfläche. Die anisotrope Bindungskonfiguration zwischen den Fe und den As- oder Ga-Atomen an der Grenzfläche wird als Ursache für die uniaxiale magnetische Anisotropie betrachtet. Die magnetische Anisotropie der Fe_3Si-Schichten auf GaAs(113)A-Substraten zeigt ein komplexe Abhängigkeit von der Wachstumsbedingungen und der Komposition der Schichten. In den Magnetotransportuntersuchungen tritt sowohl in Fe(113)- als auch in Fe_3Si(113)-Schichten eine antisymmetrische Komponente (ASC) im planaren Hall-Effekt (PHE) auf. Ein phänomenologisches Modell, dass auf der Kristallsymmetrie basiert, liefert ein gute Beschreibung sowohl der ASC im PHE als auch des symmetrischen, anisotropen Magnetowiderstandes. Das Modell zeigt, dass die beobachtete ASC als Hall-Effekt zweiter Ordnung beschreiben werden kann. / In this work, the molecular-beam epitaxial growth and properties of ferromagnets, namely Fe and Fe_3Si are studied on low-symmetric GaAs(113)A substrates. Three important aspects are investigated: (i) growth and structural characterization, (ii) magnetic properties, and (iii) magnetotransport properties of Fe and Fe_3Si films on GaAs(113)A substrates. The growth of Fe and Fe_3Si films is optimized at growth temperatures of 0 and 250 degree Celsius, respectively, where the layers exhibit high crystal quality and a smooth interface/surface similar to the [001]-oriented films. The stability of Fe_(3+x)Si_(1-x) phase over a range of composition around the Fe_3Si stoichiometry is also demonstrated. The evolution of the in-plane magnetic anisotropy with film thickness exhibits two regions: a uniaxial magnetic anisotropy (UMA) for Fe film thicknesses = 70 MLs. The existence of an out-of-plane perpendicular magnetic anisotropy is also detected in ultrathin Fe films. The interfacial contribution of both the uniaxial and the perpendicular anisotropy constants, derived from the thickness-dependent study, are found to be independent of the [113] orientation and are hence an inherent property of the Fe/GaAs interface. The origin of the UMA is attributed to anisotropic bonding between Fe and As or Ga at the interface, similarly to Fe/GaAs(001). The magnetic anisotropy in Fe_3Si on GaAs(113)A exhibits a complex dependence on the growth conditions and composition. Magnetotransport measurements of both Fe(113) and Fe_3Si(113) films shows the striking appearance of an antisymmetric component (ASC) in the planar Hall effect (PHE). A phenomenological model based on the symmetry of the crystal provides a good explanation to both the ASC in the PHE as well as the symmetric anisotropic magnetoresistance. The model shows that the observed ASC component can be ascribed to a second-order Hall effect.