A 2T2C ferroelectric memory cell consisting of a select transistor, a read transistor and two ferroelectric capacitors that can be operated either in FeRAM mode or in memristive ferroelectric tunnel junction mode is proposed. The two memory devices can be programmed individually. By performing a combined readout operation, the two stored bits of the memory cells can be combined to perform in-memory logic operation. Moreover, additional input logic signals that are applied as external readout voltage pulses can be used to perform logic operation together with the stored logic states of the ferroelectric capacitors. Electrical characterization results of the logic-in-memory (LiM) functionality is presented.

Un modèle de commutation de mémoires résistives (ReRAM) est présenté. Celui-ci est basé sur deux hypothèses : (1) la commutation résistive est causée par des changements qui se produisent dans la zone étroite (région active) du filament conducteur sous l'influence du champ électrique et (2) la commutation résistive est un processus stochastique, donc régi par une probabilité. La région active est représentée par un réseau de connexions verticales, chacune composée de trois éléments électriques : deux d'entre eux sont de faible résistance tandis que le troisième agit comme un disjoncteur et peut être soit de résistance faible (LR) ou élevée (HR). Dans ce modèle, le changement d'état du disjoncteur est régi par une probabilité de commutation (P$_{s}$) qui est comparée à un nombre aléatoire « p ». P$_{s}$ dépend de la chute de tension le long du disjoncteur et de la tension de seuil, V$_{set}$ ou V$_{reset}$, pour définir les processus de « set » (HR à LR) et « reset » (LR à HR). Deux mécanismes de conduction ont été envisagés : ohmique pour un état LR et pour un état de résistance élevée l'effet tunnel facilité par un piège (TAT). Le modèle a été implémenté avec le langage de programmation Python et fonctionne avec une bibliothèque C externe qui optimise les calculs et le temps de traitement. Les résultats de la simulation ont été validés avec succès en les comparant avec des courbes courant-tension (IV) mesurées sur dispositifs ReRAM réels dont l'oxyde était fait de HfO$_{2}$ et pour neuf aires différentes. La flexibilité et la facilité de mise en œuvre de ce modèle de commutation résistive en font un outil puissant pour l'étude des ReRAM / A model for the switching of resistive random-access memories (ReRAM) is presented. This model is based on two hypotheses: (1) the resistive switching is caused by changes that occur in the narrow zone (active region) of the conductive filament under the influence of the electric field and (2) the resistive switching is a stochastic process governed by a switching probability. The active region is represented by a net of vertical connections, each one composed of three electrical elements: two of them are always low resistive (LR) while the third one acts as a breaker and can be low or high resistive (HR). In the model, the change of the breaker's state is governed by a switching probability (P$_{s}$) that is compared with a random number $p$. P$_{s}$ depend on the voltage drop along the breaker and the threshold voltage, V$_{set}$ or V$_{reset}$ for set (HR to LR) or reset (LR to HR) processes. Two conduction mechanism has been proposed: ohmic for the low resistive state and trap-assisted tunneling (TAT) for the high resistive state. The model has been implemented in Python and works with an external C-library that optimizes calculations and processing time. The simulation results have been successfully validated by comparing measured and modeled IV curves of HfO$_{2}$-based ReRAM devices of nine different areas. It is important to note that the flexibility and easy implementation of this resistive switching model allow it to be a powerful tool for the design and study of ReRAM memories

With the advent of high-density micro-electrodes arrays, developing neural probes satisfying the real-time and stringent power-efficiency requirements becomes more challenging. A smart neural probe is an essential device in future neuroscientific research and medical applications. To realize such devices, we present a 22 nm FDSOI SoC with complex on-chip real-time data processing and training for neural signal analysis. It consists of a digitally-assisted 16-channel analog front-end with 1.52 μ W/Ch, dedicated bio-processing accelerators for spike detection and classification with 2.79 μ W/Ch, and a 125 MHz RISC-V CPU, utilizing adaptive body biasing at 0.5 V with a supporting 1.79 TOPS/W MAC array. The proposed SoC shows a proof-of-concept of how to realize a high-level integration of various on-chip accelerators to satisfy the neural probe requirements for modern applications.

Discusses the structure and topology of dynamic memory chips, the impact of the environment on the information storage process, ways to control and correct errors that occur during storage of data; in Matlab / Simulink, a model is constructed of dynamic memory cells in conditions close to the natural background radiation; a comparative analysis of noise immunity in the absence of storage and use of the Hamming code. / Рассматриваются структура и топология микросхем динамической памяти, влияние внешней среды на процесс хранения информации, способы контроля и исправления ошибок, возникающие при хранении данных; в среде Matlab/Simulink построена модель ячейки динамической памяти в условиях приближенных к естественному радиационному фону; проведен сравнительный анализ помехоустойчивости хранения данных при отсутствии и использовании кода Хемминга.

The promising role resistive random-access memory (RRAM) plays in the imminent reality of wearable electronics calls for a new, updated physical model of their operating mechanism. Their high applicability as the next-generation flexible non-volatile memory (NVM) devices has promoted the recent emergence of a novel ultra-thin (< 5nm) organic/inorganic hybrid dielectric RRAM. A deep understanding of their resistive switching (RS) behavior is required to unlock their suitability in future electronics applications. However, the extremely reduced thicknesses bring about new challenges in terms of material characterization sample processing, while the RS observations through electrical characterization techniques lack uniformity in the key switching parameters, thus hindering the identification of any clear trends.  This work studies the RS mechanism in ultra-thin Al/Hf-hybrid/Ni RRAM devices through uniformity-improved electrical observations. First, the focus is to implement a ramped-pulse train method during the reset process to reduce the dispersion of the voltage and resistance fluctuations at different starting voltage amplitudes and pulse widths. After finding the optimal electrical programming conditions for reduced parameter dispersions, a temperature test was performed to study the contributions of the metal ions and oxygen vacancies (V2+) in the switching layer. Finally, a physical model describing the operating mechanism in flexible RRAM is proposed after the close observation and study of the processed devices. The model is based on the coexistence of a hetero-metallic portion composed of Al and Hf3Al2, and a V2+ portion connected to form the hybrid conducting filament (CF) and turning the device on. The CF forming processes emphasize the strong presence of these vacancies partaking in RS, as the temperature dependence results suggest the majority of their concentration to be generated during this step. Also, the different electrical potential, temperature, and concentration gradients influencing the V2+ migration during RS may explain some of the failure mechanisms in the rupture and the re-forming of the filament. Additionally, the possible presence of a thin Al-oxide layer in the Al/Hf-hybrid interface may give a reason for leaky on-states. A detailed physical model of the RS mechanism in next-generation flexible RRAMs is key to learn to unlock a range of emerging technologies fitted to today’s needs. / Den senaste introduktionen av ultratunn (<5 nm) organisk-oorganisk hybrid dielektrisk RRAM som nästa generations icke-flyktiga minnesenheter kräver en djup förståelse för hybridskiktresistiv växling (RS). Den extremt reducerade tjockleken hindrar emellertid deras bearbetbarhet för materialkarakteriseringstekniker. Dessutom hindrar den dåliga enhetligheten i viktiga omkopplingsparametrar fortfarande i RRAM att alla trender kan definieras tydligt genom elektrisk karakterisering. Detta arbete använder elektrisk manipulation genom en RPS-metod (ramped-pulse series) för att förbättra spännings- och motståndsfluktuationerna i återställningsprocessen för ultratunna Al/Hf-hybrid/Ni-enheter vid olika spänningsamplitud, pulsbredd och temperaturförhållanden. Från de erhållna RPS-optimerade resultaten föreslås en ny och detaljerad fysisk modell som beskriver driftsmekanismen. Samexistensen i den ledande filamenten (CF) av en hybridmetalldel, sammansatt av Al och Hf3Al2, och en syrevakansdel bekräftas. Vår modell betonar vakansbidraget i RS, där majoriteten genereras under CF-formningsprocessen och deltar i olika grad i filamentbrottet för RPS och ingen RPS-bearbetade enheter via Joule-uppvärmning, drift och Fick-krafter. Dessutom förklaras kopplingsfelhändelser baserat på närvaron av ett Al2O3-lager i Al/Hf-hybridgränssnittet.

Die vorliegende Arbeit entstand im Rahmen einer Kooperation des Forschungszentrums Dresden-Rossendorf mit Qimonda Dresden GmbH & Co. OHG. Mithilfe der hochauflösenden Rutherford-Streuspektrometrie (HR-RBS) wurden das Diffusionsverhalten und Schichtwachstum von ZrO2 auf SiO2 und TiN im Anfangsstadium untersucht. Auf Grund der exzellenten Tiefenauflösung von 0,3 nm an der Oberfläche stand die Analyse von Konzentrationsprofilen in ultradünnen Schichten, respektive an deren Grenzflächen im Vordergrund. Zur qualitativen Verbesserung der Messergebnisse wurde erstmals ein zweidimensionaler positionsempfindlicher Halbleiterdetektor in den Aufbau der HR-RBS implementiert und charakterisiert. Außerdem wurde ein Messverfahren in Betrieb genommen, das mögliche Schädigungen durch den Ioneneintrag in die Messprobe minimiert. Durch die Optimierung der experimentellen Bedingungen und die Entwicklung eines Programmpaketes zur Unterstützung des Analysten konnte ein effizienter Routine-Messablauf erstellt werden. Im Moment einer binären Kollision zwischen einfallendem Ion und Targetelement kommt es bei kleinem Stoßparameter zu Veränderungen des Ladungszustands der gestreuten Ionen, insbesondere durch die abrupte Geschwindigkeitsänderung des Projektils und der Überlappung der Elektronenwolken. Bei der HR-RBS mit Energie separierendem Dipolmagneten muss zur Interpretation von Streuspektren die Ladungszustandsverteilung der gestreuten Projektile bekannt sein. Erstmalig konnte eine signifikante Abhängigkeit der Ladungszustandsverteilung gestreuter C-Ionen sowohl von der Schichtdicke als auch der Ordnungszahl des detektierten Targetelements, hier der vierten Nebengruppe, nachgewiesen werden. Diese gewonnen Erkenntnisse ermöglichten systematische Untersuchungen zum ZrO2-Schichtwachstum im Anfangsstadium. Zur Herstellung der ZrO2-Schichten wurde die Atomlagenabscheidung (ALD) verwendet. Anhand der nachgewiesenen Agglomeration von ZrO2 auf nativen SiO2 wurde mithilfe der Rasterkraftmikroskopie (AFM) zur Bestimmung von Oberflächenrauigkeiten eine Methode konzipiert, welche die Auswirkung lokaler Schichtdickeninhomogenitäten auf die niederenergetische Flanke eines Streuspektrums berücksichtigt. Auf dieser Grundlage durchgeführte Simulationsrechnungen ergeben, dass keine Diffusion von Zr in die darunter liegende Schicht stattfand, jedoch eine ZrSiO4-Grenzflächenschicht existiert. Für das Wachstum von ZrO2 auf TiN wird aus den hoch aufgelösten Streuspektren ein völlig anderes Verhalten abgeleitet. Messungen zu Oberflächentopografien der TiN-Schicht liefern nicht zu vernachlässigende Werte für die Rauigkeit. Um den Einfluss der Oberflächenrauigkeit auf die Form des hoch aufgelösten Spektrums erfassen zu können, wurde eine Software entwickelt. Auf Basis von AFM-Messungen ermöglicht dieses Programm das Extrahieren einer Energieverteilung aus den Weglängen von ausschließlich an der Oberfläche gestreuten Ionen. Unter Berücksichtigung des Effekts der Oberflächenrauigkeit auf die HR-RBS Spektrenform konnte die Diffusion von Zr in das polykristalline TiN erstmals verifiziert werden. Die Beobachtungen weisen daraufhin, dass bereits nach dem ersten ALD-Zyklus ein geringer Anteil der deponierten Zr-Atome bis in eine Tiefe von etwa 3 nm in das TiN diffundiert. Die vorläufigen Ergebnisse legen Korngrenzendiffusion nahe. / This thesis originated from a cooperation between Research Center Dresden-Rossendorf and Qimonda Dresden GmbH & Co. OHG. By means of High Resolution Rutherford Backscattering Spectrometry (HR-RBS) the diffusion behaviour and layer growth of ZrO2 on SiO2 and TiN in the initial regime were investigated. The analysis of concentration profiles in ultrathin layers and interfaces was the focus of this work, made possible by the excellent depth resolution of less than 0.3 nm near the surface. For the first time a two-dimensional position sensitive semiconductor detector was implemented and characterized in the setup of the HR-RBS for the improvement of the quality of the measurement results. Furthermore, a measurement procedure was put into operation that allowed the reduction of ion induced damage. Through the optimization of the experimental conditions and the development of a program package for the support of the analyst, an efficient measurement procedure could be routinely ensured. At the time of a binary collision between the incident ion and the target element with a small impact factor, the charge state changes frequently, especially due to the abruptly decreasing ion velocity of the projectile and the overlapping of the electron clouds. For HR-RBS with an energy-separating dipole magnet, the charge state distribution of the scattered ions must be known for the interpretation of the measured spectra. For the first time a significant dependence of the charge state distribution of the scattered C ions on the layer thickness as well as atomic number of the detected target elements, here from the fourth subgroup, was emonstrated. This new knowledge allowed systematic investigations of the ZrO2 layer growth in the initial regime. The ZrO2 layers were produced by means of the atomic layer deposition (ALD). Based on the evidence for agglomeration of ZrO2 on SiO2 a method was introduced, which takes local thickness variations into account during the simulation of the HR-RBS spectra. An accurate statement about the ZrO2/SiO2 interface was possible due to the extraction of the thickness variation by the atomic force microscopy (AFM). The boundary surface is sharp except for a small intermediate ZrSiO4 layer and no diffusion of Zr atoms in SiO2 could be detected. A quite different behaviour could be derived from high resolution spectra for the growth of ZrO2 on TiN. Measurements of the surface topography of the TiN layer revealed non negligible values for the surface roughness. A program was developed to capture the influence of the surface roughness on the shape of the high resolution spectrum. This software uses AFM measurements to extract an energy distribution from calculated path length differences for ions scattered at the sample surface. Diffusion of Zr into polycrystalline TiN was demonstrated for the first time taking into account the effect of the surface roughness on the shape of the spectra. This observation indicates that already after the first ALD reaction cycle a small part of the deposited Zr atoms diffuses into the TiN layer up to a depth of 3 nm. Such preliminary results suggest grain boundary diffusion.

GeTe and Ge2Sb2Te5 alloys are potential candidates for non-volatile phase change random access memories (PCRAM). For electrical data storage applications the materials should have stable amorphous and crystalline phases, fast crystallization time, low power to switch, and high crystallization activation energy (to be stable at normal operating temperatures). Phase change memories can be tuned through compositional variations to achieve sufficient phase change contrast and thermal stability for data retention. Selenium is one of the attractive choices to use as an additive material owing to its flexible amorphous structure and a variety of possible applications in optoelectronics and solar cells. GeSb2Te3Se alloy, in which 25 at.% of Se substituted for Te, show a higher room temperature resistance with respect to parent GeSb2Te4 alloy, but the transition temperature is lowered which will affect the thermal stability. The RESET current observed for Sb65Se35 alloys were reduced and the crystallization speed increased 25 % faster with respect to Ge2Sb2Te5. Alloys of Ga-Sb-Se possess advantages such as higher crystallization temperatures, better data retention, higher switching speed, lower thermal conductivity and lower melting point than the GST, but the resistance ratio is limited to about two orders of magnitude. This affects the resistance contrast and data readability. It is with this background a study has been carried out in GeTe and GeSbTe system with Se doping. Studies on structural, thermal and optical properties of these materials all through the phase transition temperatures would be helpful to explore the feasibility of phase change memory uses. Thin films along with their bulk counterparts such as (GeTe)1-x Sex ( 0 < x ≤ 0.50) and (GST)1-xSex (0 < x ≤ 0.50), including GeTe and GST alloys, have been prepared. The results are presented in four chapters apart from the Introduction and Experimental techniques chapters. The final chapter summarizes the results. Chapter 1 provides an introduction to chalcogenide glasses, phase change memory materials and their applications. The fundamental properties of amorphous solids, basic phase change properties of Ge2Sb2Te5 and GeTe alloys and their applications are presented in detail. Various doping studies on GeTe and Ge2Sb2Te5 reported in literatures are reviewed. The limitations, challenges, future and scope of the present work are presented. In chapter 2, the experimental techniques used for thin film preparation, electrical characterizations, optical characterization and surface characterizations etc. are explained. Chapter 3 deals entirely on Ge2Sb2Te5 films studied throughout the phase transition, by annealing at different temperatures. Changes in sheet resistance, optical transmission, morphology and surface bonding characteristics are analyzed. The crystallization leads to an increase of roughness and the resistance changes to three orders of magnitude at 125 oC. Optical studies show distinct changes in transmittance during phase transitions and the optical parameters are calculated. Band gap contrast and disorder variation with annealing temperatures are explained. The surface bonding characteristics studied by XPS show Ge-Te, Sb-Te bonds are present in both amorphous and crystalline phases. The temperature dependent modifications of the band structure of amorphous GST films at low temperatures have been little explored. The band gap increment of around 0.2 eV is observed at low temperature (4.2 K) compared to room temperature 300 K. Other optical parameters like Urbach energy and B1/2 are studied at different temperatures and are evaluated. The observed changes in optical band gap (Eopt) are fitted to Fan’s one phonon approximation, from which a phonon energy (ћω) corresponding to a frequency of 3.59 THz resulted. The frequency of 3.66 THz optical phonons has already been reported by coherent phonon spectroscopy experiment in amorphous GST. This opens up an indirect method of calculating the phonon frequency of the amorphous phase change materials. Chapter 4 constitutes comparison of optical, electrical and structural investigation of GST and (GST)1-xSex films. It is well known that GST alloys have vacancy in their structure, which leads to the possibility of switching between the amorphous and crystalline states with minimum damage. Added Se may occupy the vacancy or change the bonding characteristics which intern may manifest in the possibility of change in optical and electrical parameters. The structural studies show a direct amorphous to hexagonal transition in (GST)1-xSex, where x ≥ 0.10 at.%. Raman spectra of the as deposited and annealed (GST)1-xSex films show structural modifications. The infrared transmission spectra indicate a shift in absorption edges from low to high photon energy when Se concentration increases in GST. Band gap values calculated from Tauc plot show the band gap increment with Se doping. It is noted that a small amount of Se doping increases the resistance of the amorphous and crystalline phases and maintains the same orders of resistance contrast. This will be beneficial as it improves the thermal stability and reduces the write current in a device. Switching studies show an increasing threshold voltage as the Se doping concentration increases. Chapter 5 comprises compositional dependent investigations of the bulk GeTe chalcogenides alloys added with different selenium concentrations. The XRD investigations on bulk (GeTe)1-xSex (x = 0.0, 0.02, 0.10, 0.20 and 0.50 at.%) alloys show that the crystalline structure of GeTe alloys does not affect ≤ 0.20 at.% of Se concentration. With increasing amount of Se concentration the alloys gets modified in to a homogeneous amorphous structure. This result has been verified from the XRD, Raman, XPS, SEM and DSC measurements. The possibility that Se occupying the Ge vacancy sites in GeTe structure is explained. Since Se is an easy glass former, the amorphousness increases in the alloys due to new amorphous phases formed by the Se with other elements. It is shown from Raman and XPS analysis that the Ge-Te bonds exists up to Se 0.20 at.% alloys. Ge-Se and GeTe2 bonds are increasing with increasing Se at.%. Melting temperature has found decreases and the reduction in melting point may reduces the RESET current. Further studies on switching behavior may bring out its usefulness. Chapter 6 deals with studies on (GeTe)1-xSex films for phase change memory applications based on the insight received from their bulk study. Even at low at.% addition of Se makes the as prepared (GeTe)1-xSex film amorphous. At 200 oC, GeTe crystalline structure is evolved and the intensity of the peaks reduces in the alloys with increase of Se content. At 300 oC, more evolved GeTe crystalline structure is seen compared to 200 oC annealed films whereas 0.20 at.% Se alloy remain amorphous. Resistance and thermal studies shows increase in crystallization temperature. It is expected that Se sits in the vacancies of the GeTe crystalline structural formation. This may also account for the increased threshold voltages with increasing Se doping. The band gap increase with increase of Se at.% signifying the possibility of band gap tuning in the material. Possible explanation for the increased order in GeTe due to Se doping is presented. The modifications in the alloy with Se addition can be explained with the help of chemical bond energy approach. Those bonds having higher energy leads to increased average bond energy of the system and hence the band gap. The XPS core level spectra and Raman spectra investigation clearly shows the GeTe bonds are replaced by Ge-Se bonds and GeTe2 bonds. The 0.10 at.% Se alloy is found to have a higher thermal stability in the amorphous state and maintains a gigantic resistance contrast compared to other Se concentration alloys. This alloy can be considered as an ideal candidate for multilevel PCM applications. Chapter 7 summarizes the major findings from this work and the scope for future work.

La quinta generación de redes móviles (5G) se encuentra a la vuelta de la esquina. Se espera provea de beneficios extraordinarios a la población y que resuelva la mayoría de los problemas de las redes 4G actuales. El éxito de 5G, cuya primera fase de estandarización ha sido completada, depende de tres pilares: comunicaciones tipo-máquina masivas, banda ancha móvil mejorada y comunicaciones ultra fiables y de baja latencia (mMTC, eMBB y URLLC, respectivamente). En esta tesis nos enfocamos en el primer pilar de 5G, mMTC, pero también proveemos una solución para lograr eMBB en escenarios de distribución masiva de contenidos. Específicamente, las principales contribuciones son en las áreas de: 1) soporte eficiente de mMTC en redes celulares; 2) acceso aleatorio para el reporte de eventos en redes inalámbricas de sensores (WSNs); y 3) cooperación para la distribución masiva de contenidos en redes celulares. En el apartado de mMTC en redes celulares, esta tesis provee un análisis profundo del desempeño del procedimiento de acceso aleatorio, que es la forma mediante la cual los dispositivos móviles acceden a la red. Estos análisis fueron inicialmente llevados a cabo por simulaciones y, posteriormente, por medio de un modelo analítico. Ambos modelos fueron desarrollados específicamente para este propósito e incluyen uno de los esquemas de control de acceso más prometedores: access class barring (ACB). Nuestro modelo es uno de los más precisos que se pueden encontrar en la literatura y el único que incorpora el esquema de ACB. Los resultados obtenidos por medio de este modelo y por simulación son claros: los accesos altamente sincronizados que ocurren en aplicaciones de mMTC pueden causar congestión severa en el canal de acceso. Por otro lado, también son claros en que esta congestión se puede prevenir con una adecuada configuración del ACB. Sin embargo, los parámetros de configuración del ACB deben ser continuamente adaptados a la intensidad de accesos para poder obtener un desempeño óptimo. En la tesis se propone una solución práctica a este problema en la forma de un esquema de configuración automática para el ACB; lo llamamos ACBC. Los resultados muestran que nuestro esquema puede lograr un desempeño muy cercano al óptimo sin importar la intensidad de los accesos. Asimismo, puede ser directamente implementado en redes celulares para soportar el tráfico mMTC, ya que ha sido diseñado teniendo en cuenta los estándares del 3GPP. Además de los análisis descritos anteriormente para redes celulares, se realiza un análisis general para aplicaciones de contadores inteligentes. Es decir, estudiamos un escenario de mMTC desde la perspectiva de las WSNs. Específicamente, desarrollamos un modelo híbrido para el análisis de desempeño y la optimización de protocolos de WSNs de acceso aleatorio y basados en cluster. Los resultados muestran la utilidad de escuchar el medio inalámbrico para minimizar el número de transmisiones y también de modificar las probabilidades de transmisión después de una colisión. En lo que respecta a eMBB, nos enfocamos en un escenario de distribución masiva de contenidos, en el que un mismo contenido es enviado de forma simultánea a un gran número de usuarios móviles. Este escenario es problemático, ya que las estaciones base de la red celular no cuentan con mecanismos eficientes de multicast o broadcast. Por lo tanto, la solución que se adopta comúnmente es la de replicar e contenido para cada uno de los usuarios que lo soliciten; está claro que esto es altamente ineficiente. Para resolver este problema, proponemos el uso de esquemas de network coding y de arquitecturas cooperativas llamadas nubes móviles. En concreto, desarrollamos un protocolo para la distribución masiva de contenidos, junto con un modelo analítico para su optimización. Los resultados demuestran que el modelo propuesto es simple y preciso, y que el protocolo puede reducir el con / La cinquena generació de xarxes mòbils (5G) es troba molt a la vora. S'espera que proveïsca de beneficis extraordinaris a la població i que resolga la majoria dels problemes de les xarxes 4G actuals. L'èxit de 5G, per a la qual ja ha sigut completada la primera fase del qual d'estandardització, depén de tres pilars: comunicacions tipus-màquina massives, banda ampla mòbil millorada, i comunicacions ultra fiables i de baixa latència (mMTC, eMBB i URLLC, respectivament, per les seues sigles en anglés). En aquesta tesi ens enfoquem en el primer pilar de 5G, mMTC, però també proveïm una solució per a aconseguir eMBB en escenaris de distribució massiva de continguts. Específicament, les principals contribucions són en les àrees de: 1) suport eficient de mMTC en xarxes cel·lulars; 2) accés aleatori per al report d'esdeveniments en xarxes sense fils de sensors (WSNs); i 3) cooperació per a la distribució massiva de continguts en xarxes cel·lulars. En l'apartat de mMTC en xarxes cel·lulars, aquesta tesi realitza una anàlisi profunda de l'acompliment del procediment d'accés aleatori, que és la forma mitjançant la qual els dispositius mòbils accedeixen a la xarxa. Aquestes anàlisis van ser inicialment dutes per mitjà de simulacions i, posteriorment, per mitjà d'un model analític. Els models van ser desenvolupats específicament per a aquest propòsit i inclouen un dels esquemes de control d'accés més prometedors: el access class barring (ACB). El nostre model és un dels més precisos que es poden trobar i l'únic que incorpora l'esquema d'ACB. Els resultats obtinguts per mitjà d'aquest model i per simulació són clars: els accessos altament sincronitzats que ocorren en aplicacions de mMTC poden causar congestió severa en el canal d'accés. D'altra banda, també són clars en què aquesta congestió es pot previndre amb una adequada configuració de l'ACB. No obstant això, els paràmetres de configuració de l'ACB han de ser contínuament adaptats a la intensitat d'accessos per a poder obtindre unes prestacions òptimes. En la tesi es proposa una solució pràctica a aquest problema en la forma d'un esquema de configuració automàtica per a l'ACB; l'anomenem ACBC. Els resultats mostren que el nostre esquema pot aconseguir un acompliment molt proper a l'òptim sense importar la intensitat dels accessos. Així mateix, pot ser directament implementat en xarxes cel·lulars per a suportar el trànsit mMTC, ja que ha sigut dissenyat tenint en compte els estàndards del 3GPP. A més de les anàlisis descrites anteriorment per a xarxes cel·lulars, es realitza una anàlisi general per a aplicacions de comptadors intel·ligents. És a dir, estudiem un escenari de mMTC des de la perspectiva de les WSNs. Específicament, desenvolupem un model híbrid per a l'anàlisi de prestacions i l'optimització de protocols de WSNs d'accés aleatori i basats en clúster. Els resultats mostren la utilitat d'escoltar el mitjà sense fil per a minimitzar el nombre de transmissions i també de modificar les probabilitats de transmissió després d'una col·lisió. Pel que fa a eMBB, ens enfoquem en un escenari de distribució massiva de continguts, en el qual un mateix contingut és enviat de forma simultània a un gran nombre d'usuaris mòbils. Aquest escenari és problemàtic, ja que les estacions base de la xarxa cel·lular no compten amb mecanismes eficients de multicast o broadcast. Per tant, la solució que s'adopta comunament és la de replicar el contingut per a cadascun dels usuaris que ho sol·liciten; és clar que això és altament ineficient. Per a resoldre aquest problema, proposem l'ús d'esquemes de network coding i d'arquitectures cooperatives anomenades núvols mòbils. En concret, desenvolupem un protocol per a realitzar la distribució massiva de continguts de forma eficient, juntament amb un model analític per a la seua optimització. Els resultats demostren que el model proposat és simple i precís / The 5th generation (5G) of mobile networks is just around the corner. It is expected to bring extraordinary benefits to the population and to solve the majority of the problems of current 4th generation (4G) systems. The success of 5G, whose first phase of standardization has concluded, relies in three pillars that correspond to its main use cases: massive machine-type communication (mMTC), enhanced mobile broadband (eMBB), and ultra-reliable low latency communication (URLLC). This thesis mainly focuses on the first pillar of 5G: mMTC, but also provides a solution for the eMBB in massive content delivery scenarios. Specifically, its main contributions are in the areas of: 1) efficient support of mMTC in cellular networks; 2) random access (RA) event-reporting in wireless sensor networks (WSNs); and 3) cooperative massive content delivery in cellular networks. Regarding mMTC in cellular networks, this thesis provides a thorough performance analysis of the RA procedure (RAP), used by the mobile devices to switch from idle to connected mode. These analyses were first conducted by simulation and then by an analytical model; both of these were developed with this specific purpose and include one of the most promising access control schemes: the access class barring (ACB). To the best of our knowledge, this is one of the most accurate analytical models reported in the literature and the only one that incorporates the ACB scheme. Our results clearly show that the highly-synchronized accesses that occur in mMTC applications can lead to severe congestion. On the other hand, it is also clear that congestion can be prevented with an adequate configuration of the ACB scheme. However, the configuration parameters of the ACB scheme must be continuously adapted to the intensity of access attempts if an optimal performance is to be obtained. We developed a practical solution to this problem in the form of a scheme to automatically configure the ACB; we call it access class barring configuration (ACBC) scheme. The results show that our ACBC scheme leads to a near-optimal performance regardless of the intensity of access attempts. Furthermore, it can be directly implemented in 3rd Generation Partnership Project (3GPP) cellular systems to efficiently handle mMTC because it has been designed to comply with the 3GPP standards. In addition to the analyses described above for cellular networks, a general analysis for smart metering applications is performed. That is, we study an mMTC scenario from the perspective of event detection and reporting WSNs. Specifically, we provide a hybrid model for the performance analysis and optimization of cluster-based RA WSN protocols. Results showcase the utility of overhearing to minimize the number of packet transmissions, but also of the adaptation of transmission parameters after a collision occurs. Building on this, we are able to provide some guidelines that can drastically increase the performance of a wide range of RA protocols and systems in event reporting applications. Regarding eMBB, we focus on a massive content delivery scenario in which the exact same content is transmitted to a large number of mobile users simultaneously. Such a scenario may arise, for example, with video streaming services that offer a particularly popular content. This is a problematic scenario because cellular base stations have no efficient multicast or broadcast mechanisms. Hence, the traditional solution is to replicate the content for each requesting user, which is highly inefficient. To solve this problem, we propose the use of network coding (NC) schemes in combination with cooperative architectures named mobile clouds (MCs). Specifically, we develop a protocol for efficient massive content delivery, along with the analytical model for its optimization. Results show the proposed model is simple and accurate, and the protocol can lead to energy savings of up to 37 percent when compared to the traditional approach. / Leyva Mayorga, I. (2018). On reliable and energy efficient massive wireless communications: the road to 5G [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/115484 / TESIS

Die vorliegende Arbeit entstand im Rahmen einer Kooperation des Forschungszentrums Dresden-Rossendorf mit Qimonda Dresden GmbH & Co. OHG. Mithilfe der hochauflösenden Rutherford-Streuspektrometrie (HR-RBS) wurden das Diffusionsverhalten und Schichtwachstum von ZrO2 auf SiO2 und TiN im Anfangsstadium untersucht. Auf Grund der exzellenten Tiefenauflösung von 0,3 nm an der Oberfläche stand die Analyse von Konzentrationsprofilen in ultradünnen Schichten, respektive an deren Grenzflächen im Vordergrund. Zur qualitativen Verbesserung der Messergebnisse wurde erstmals ein zweidimensionaler positionsempfindlicher Halbleiterdetektor in den Aufbau der HR-RBS implementiert und charakterisiert. Außerdem wurde ein Messverfahren in Betrieb genommen, das mögliche Schädigungen durch den Ioneneintrag in die Messprobe minimiert. Durch die Optimierung der experimentellen Bedingungen und die Entwicklung eines Programmpaketes zur Unterstützung des Analysten konnte ein effizienter Routine-Messablauf erstellt werden. Im Moment einer binären Kollision zwischen einfallendem Ion und Targetelement kommt es bei kleinem Stoßparameter zu Veränderungen des Ladungszustands der gestreuten Ionen, insbesondere durch die abrupte Geschwindigkeitsänderung des Projektils und der Überlappung der Elektronenwolken. Bei der HR-RBS mit Energie separierendem Dipolmagneten muss zur Interpretation von Streuspektren die Ladungszustandsverteilung der gestreuten Projektile bekannt sein. Erstmalig konnte eine signifikante Abhängigkeit der Ladungszustandsverteilung gestreuter C-Ionen sowohl von der Schichtdicke als auch der Ordnungszahl des detektierten Targetelements, hier der vierten Nebengruppe, nachgewiesen werden. Diese gewonnen Erkenntnisse ermöglichten systematische Untersuchungen zum ZrO2-Schichtwachstum im Anfangsstadium. Zur Herstellung der ZrO2-Schichten wurde die Atomlagenabscheidung (ALD) verwendet. Anhand der nachgewiesenen Agglomeration von ZrO2 auf nativen SiO2 wurde mithilfe der Rasterkraftmikroskopie (AFM) zur Bestimmung von Oberflächenrauigkeiten eine Methode konzipiert, welche die Auswirkung lokaler Schichtdickeninhomogenitäten auf die niederenergetische Flanke eines Streuspektrums berücksichtigt. Auf dieser Grundlage durchgeführte Simulationsrechnungen ergeben, dass keine Diffusion von Zr in die darunter liegende Schicht stattfand, jedoch eine ZrSiO4-Grenzflächenschicht existiert. Für das Wachstum von ZrO2 auf TiN wird aus den hoch aufgelösten Streuspektren ein völlig anderes Verhalten abgeleitet. Messungen zu Oberflächentopografien der TiN-Schicht liefern nicht zu vernachlässigende Werte für die Rauigkeit. Um den Einfluss der Oberflächenrauigkeit auf die Form des hoch aufgelösten Spektrums erfassen zu können, wurde eine Software entwickelt. Auf Basis von AFM-Messungen ermöglicht dieses Programm das Extrahieren einer Energieverteilung aus den Weglängen von ausschließlich an der Oberfläche gestreuten Ionen. Unter Berücksichtigung des Effekts der Oberflächenrauigkeit auf die HR-RBS Spektrenform konnte die Diffusion von Zr in das polykristalline TiN erstmals verifiziert werden. Die Beobachtungen weisen daraufhin, dass bereits nach dem ersten ALD-Zyklus ein geringer Anteil der deponierten Zr-Atome bis in eine Tiefe von etwa 3 nm in das TiN diffundiert. Die vorläufigen Ergebnisse legen Korngrenzendiffusion nahe. / This thesis originated from a cooperation between Research Center Dresden-Rossendorf and Qimonda Dresden GmbH & Co. OHG. By means of High Resolution Rutherford Backscattering Spectrometry (HR-RBS) the diffusion behaviour and layer growth of ZrO2 on SiO2 and TiN in the initial regime were investigated. The analysis of concentration profiles in ultrathin layers and interfaces was the focus of this work, made possible by the excellent depth resolution of less than 0.3 nm near the surface. For the first time a two-dimensional position sensitive semiconductor detector was implemented and characterized in the setup of the HR-RBS for the improvement of the quality of the measurement results. Furthermore, a measurement procedure was put into operation that allowed the reduction of ion induced damage. Through the optimization of the experimental conditions and the development of a program package for the support of the analyst, an efficient measurement procedure could be routinely ensured. At the time of a binary collision between the incident ion and the target element with a small impact factor, the charge state changes frequently, especially due to the abruptly decreasing ion velocity of the projectile and the overlapping of the electron clouds. For HR-RBS with an energy-separating dipole magnet, the charge state distribution of the scattered ions must be known for the interpretation of the measured spectra. For the first time a significant dependence of the charge state distribution of the scattered C ions on the layer thickness as well as atomic number of the detected target elements, here from the fourth subgroup, was emonstrated. This new knowledge allowed systematic investigations of the ZrO2 layer growth in the initial regime. The ZrO2 layers were produced by means of the atomic layer deposition (ALD). Based on the evidence for agglomeration of ZrO2 on SiO2 a method was introduced, which takes local thickness variations into account during the simulation of the HR-RBS spectra. An accurate statement about the ZrO2/SiO2 interface was possible due to the extraction of the thickness variation by the atomic force microscopy (AFM). The boundary surface is sharp except for a small intermediate ZrSiO4 layer and no diffusion of Zr atoms in SiO2 could be detected. A quite different behaviour could be derived from high resolution spectra for the growth of ZrO2 on TiN. Measurements of the surface topography of the TiN layer revealed non negligible values for the surface roughness. A program was developed to capture the influence of the surface roughness on the shape of the high resolution spectrum. This software uses AFM measurements to extract an energy distribution from calculated path length differences for ions scattered at the sample surface. Diffusion of Zr into polycrystalline TiN was demonstrated for the first time taking into account the effect of the surface roughness on the shape of the spectra. This observation indicates that already after the first ALD reaction cycle a small part of the deposited Zr atoms diffuses into the TiN layer up to a depth of 3 nm. Such preliminary results suggest grain boundary diffusion.