Syftet med detta examensarbete är att och utvärdera undersöka analysera och utvärdera prestandan hos WebRTC-protokollet, samt att utveckla en webbaserad klient med hjälp av JavaScript för distribuerade system och demonstrera protokollets användbarhet i ett verkligt scenario. Studien inkluderade användning av olika verktyg och bibliotek, såsom Socket.IO, Node.js, Express.js och PeerJS. De viktigaste prestandaindikatorerna som utvärderades var latens/tur- och returtid (RTT), jitter och paketförlust. Implementationen testades både lokalt och på distans. Prestandatestningen av applikationen utfördes med hjälp av webbplatserna "Chrome webrtc-internals" och "TestRTC", vilka erbjöd detaljerade insikter och statistik om WebRTC-prestanda. Resultaten indikerade att WebRTC erbjuder högpresterande och kostnadseffektiv realtidskommunikation som är kompatibel med andra applikationer som stöder protokollet. Protokollet visade sig ha robusta säkerhetsåtgärder, vara kompatibelt med distribuerade system och erbjuda stark prestanda när det gäller latens, jitter och paketförlust. Studien drog slutsatsen att WebRTC, med sin skalbarhet och förmåga att erbjuda kommunikation i realtid, är ett fördelaktigt val för distribuerade system och webbaserade videochattapplikationer. Resultaten uppmanar till ytterligare undersökningar inom områden som end-to-end-kryptering och integration av artificiell intelligens för att förbättra systemets prestanda och säkerhet. / The aim of this thesis is to analyse and evaluate the performance of the WebRTC protocol, develop a web-based client using JavaScript for distributed systems, and demonstrate the utility of the protocol in a real-world scenario. The study involved the use of various tools and libraries, including Socket.IO, Node.js, Express.js, and PeerJS. Key performance indicators evaluated were latency/round-trip time (RTT), jitter, and packet loss. The implementation was tested both locally and remotely. Performance testing of the application was conducted using the "Chrome webrtc-internals" and "TestRTC" websites, which provided detailed insights and statistics on WebRTC performance. The results indicated that WebRTC offers high-performance and cost-effective real-time communication that is compatible with other applications supporting the protocol. The protocol demonstrated robust security measures, compatibility with distributed systems, and strong performance in terms of latency, jitter, and packet loss. The study concluded that WebRTC, with its scalability and ability to provide real-time communication, is a beneficial choice for distributed systems and webbased video chat applications. The findings encourage further investigations in areas such as end-to-end encryption and the integration of artificial intelligence to enhance system performance and security.

As traditional TV-broadcasters utilize the Internet to transport video streams, they often employ third party distribution networks to ensure that the Quality of Service of the packet stream remain high. In the last step of such a distribution network, a playout scheduler will schedule the packets so that their intervals are as close as possible to the intervals with which they were initially sent by the source. This is done with the aim to minimize the amount of packet delay variation experienced by the final destination. Due to the source and distribution network not always being synchronized to the same reference clock, reconstructing the packet intervals back into the initial values is subject to the issue of clock skew; the clocks run at different frequencies. In the presence of clock skew, each packet interval will be reconstructed with a slight error, which will accumulate throughout the packet stream. This thesis evaluates how clock frequency ratio estimators can be implemented as part of the playout scheduler, allowing it to better reconstruct the packet intervals in the face of clock skew. Two clock frequency ratio estimators presented in the literature are implemented as a part of playout schedulers, and their use in the context of a video distribution network is evaluated and compared to other playout schedulers. All in all, four of the considered playout schedulers employ clock frequency ratio estimation, and four do not. The playout schedulers are tested on a test bed consisting of two unsynchronized computers, physically separated into a source and a destination connected via Ethernet, to ensure the presence of clock skew. The source generates a video stream, which is sent to the destination. The destination is responsible for packet interval reconstruction and data collection, that allows for comparison of the eight playout schedulers. Each playout scheduler is evaluated under three different network scenarios, each network scenario with increasing amounts of packet delay variation added to the packet stream. The results show that the Cumulative Ratio Scaling with Warm-up scheduler, which employs a clock frequency ratio estimator based on accumulating inter-packet times, performs well under all three network scenarios. The behaviour of the playout scheduler is predictable and the frequency ratio estimate seems to converge towards the true clock frequency ratio as more packets arrive at the playout scheduler. While this playout scheduler is not perfect, its behaviour shows promise in being extended. / När traditionella TV-bolag sänder från avlägsna platser skickas ofta videoströmmen till huvudanläggningen via Internet. För att säkerställa att paketströmmen levereras till huvudanläggningen med hög kvalitet används ofta distributionsnätverk som tillhandahålls av en tredje part. Det sista steget i ett sådant distributionsnätverk utgörs av en utspelningsschemaläggare som schemalägger paketen så att de skickas ut med intervall så lika som möjligt de intervall paketen ursprungligen skickades med, en så kallad återkonstruktion av paketintervallen. Detta görs för att minimera mängden fördröjningsvariation som upplevs av den slutgiltiga destinationen. På grund av att källan och distributionsnätverket inte alltid är synkroniserade till samma referensklocka kommer återkonstruktionen av paketintervallen påverkas av klockskevning; klockorna i källan och det sista steget i distributionsnätverket går i olika takt. Klockskevningen innebär att varje paketintervall återskapas med ett litet fel – ett fel som ackumuleras över tid. Denna uppsats utvärderar hur klockfrekvensratiouppskattare kan användas i en utspelningsschemaläggare, och huruvida uppskattaren kan bidra till att bättre återkonstruera paketintervallen. Två uppskattare som presenterats i tidigare forskning implementeras i utspelningsschemaläggare, och dess användbarhet utvärderas och jämförs inom kontexten för videodistributionsnätverk. Fyra av de utvärderade utspelningsschemaläggarna använder sig av uppskattare och fyra gör det inte. Utspelningsschemaläggarna testas på en testbädd bestående av två osynkroniserade datorer, sammankopplade via Ethernet, för att säkerställa förekomsten av klockskevning. Källan skickar en videoström till destinationen, som i sig ansvarar för återkonstruktion av paketintervallen samt insamling av den data som möjliggör jämförelser mellan de åtta utspelningsschemaläggarna. Varje utspelningsschemaläggare testas under tre olika nätverksscenarion, där varje nätverksscenario utsätter paketströmmen för olika grader av fördröjningsvariation. Resultaten visar att en av utspelningsschemaläggarna, som använder en uppskattare där paketintervall ackumuleras över tid, presterar bra under alla tre nätverksscenarion. Schemaläggaren beter sig förutsägbart, och uppskattningen av klockfrekvensration verkar konvergera till den sanna klockfrekvensration i takt med att allt fler paket inkluderas i beräkningen. Utspelningsschemaläggaren är inte perfekt, men uppvisar lovande beteende för framtida förbättringar.

Nickel und Nickel (II) -oxid werden in großem Umfang in fortgeschrittenen elektronischen Geräten verwendet. In der Mikroelektronik-Industrie wird Nickel verwendet werden, um Nickelsilizid bilden. Die Nickelmono Silizid (NiSi) wurde als ausgezeichnetes Material für Source-Drain-Kontaktanwendungen unter 45 nm-CMOS-Technologie entwickelt. Im Vergleich zu anderen Siliziden für die Kontaktanwendungen verwendet wird NiSi wegen seines niedrigen spezifischen Widerstand, niedrigen Kontaktwiderstand, relativ niedrigen Bildungstemperatur und niedrigem Siliziumverbrauchs bevorzugt. Nickel in Nickelbasis-Akkus und ferromagnetischen Direktzugriffsspeicher (RAMs) verwendet. Nickel (II) oxid wird als Transistor-Gate-Oxid und Oxid in resistive RAM genutzt wird. Atomic Layer Deposition (ALD) ist eine spezielle Art der Chemical Vapor Deposition (CVD), das verwendet wird, um sehr glatte sowie homogene Dünnfilme mit hervorragenden Treue auch bei hohen Seitenverhältnissen abzuscheiden. Es basiert auf selbstabschließenden sequentielle Gas-Feststoff-Reaktionen, die eine präzise Steuerung der Filmdicke auf wenige Angström lassen sich auf der Basis. Zur Herstellung der heutigen 3D-elektronische Geräte, sind Technologien wie ALD erforderlich. Trotz der Vielzahl von praktischen Anwendungen von Nickel und Nickel (II) -oxid, sind einige Nickelvorstufen zur thermischen basierend ALD erhältlich. Darüber hinaus haben diese Vorstufen bei schlechten Filmeigenschaften führte und die Prozesseigenschaften wurden ebenfalls begrenzt. Daher in dieser Masterarbeit mussten die Eigenschaften verschiedener neuartiger Nickelvorstufen zu bewerten. Alle neuen Vorstufen heteroleptische (verschiedene Arten von Liganden) und Komplexe wurden vom Hersteller speziell zur thermischen basierend ALD aus reinem Nickel mit H 2 als ein Co-Reaktionsmittel gestaltet. Um die neuartige Vorläufer zu untersuchen, wurde eine neue Methode entwickelt, um kleine Mengen in einer sehr zeitsparend (bis zu 2 g) von Ausgangsstoffen zu testen. Diese Methodologie beinhaltet: TGA / DTA-Kurve analysiert der Vorstufen, thermische Stabilitätstests in dem die Vorläufer (<0,1 g) wurden bei erhöhter Temperatur in einer abgedichteten Umgebung für mehrere Stunden wurde die Abscheidung Experimenten und Film Charakterisierungen erhitzt. Die Abscheidungen wurden mit Hilfe der in situ Quarzmikrowaage überwacht, während die anwendungsbezogenen Filmeigenschaften, wie chemische Zusammensetzung, physikalische Phase, Dicke, Dichte, Härte und Schichtwiderstand wurden mit Hilfe von ex situ Messverfahren untersucht. Vor der Evaluierung neuartiger Nickelvorstufen ein Benchmark ALD-Prozess war vom Referenznickelvorläufer (Ni (AMD)) und Luft als Reaktionspartner entwickelt. Das Hauptziel der Entwicklung und Optimierung von solchen Benchmark-ALD-Prozess war es, Standard-Prozessparameter wie zweite Reaktionspartner Belichtungszeiten, Argonspülung Zeiten, gesamtprozessdruck, beginnend Abscheidungstemperatur und Gasströme zu extrahieren. Diese Standard-Prozessparameter mussten verwendet, um die Prozessentwicklung Aufgabe (das spart Vorläufer Verbrauch) zu verkürzen und die Sublimationstemperatur Optimierung für jede neuartige Vorstufe werden. Die ALD Verhalten wurde in Bezug auf die Wachstumsrate durch Variation des Nickelvorläuferbelichtungszeit, Vorläufer Temperatur und Niederschlagstemperatur überprüft. / Nickel and nickel(II) oxide are widely used in advanced electronic devices . In microelectronic industry, nickel is used to form nickel silicide. The nickel mono-silicide (NiSi) has emerged as an excellent material of choice for source-drain contact applications below 45 nm node CMOS technology. As compared to other silicides used for the contact applications, NiSi is preferred because of its low resistivity, low contact resistance, relatively low formation temperature and low silicon consumption. Nickel is used in nickel-based rechargeable batteries and ferromagnetic random access memories (RAMs). Nickel(II) oxide is utilized as transistor gate-oxide and oxide in resistive RAMs. Atomic Layer Deposition (ALD) is a special type of Chemical Vapor Deposition (CVD) technique, that is used to deposit very smooth as well as homogeneous thin films with excellent conformality even at high aspect ratios. It is based on self-terminating sequential gas-solid reactions that allow a precise control of film thickness down to few Angstroms. In order to fabricate todays 3D electronic devices, technologies like ALD are required. In spite of huge number of practical applications of nickel and nickel(II) oxide, a few nickel precursors are available for thermal based ALD. Moreover, these precursors have resulted in poor film qualities and the process properties were also limited. Therefore in this master thesis, the properties of various novel nickel precursors had to be evaluated. All novel precursors are heteroleptic (different types of ligands) complexes and were specially designed by the manufacturer for thermal based ALD of pure nickel with H 2 as a co-reactant. In order to evaluate the novel precursors, a new methodology was designed to test small amounts (down to 2 g) of precursors in a very time efficient way. This methodology includes: TGA/DTA curve analyses of the precursors, thermal stability tests in which the precursors (< 0.1 g) were heated at elevated temperatures in a sealed environment for several hours, deposition experiments, and film characterizations. The depositions were monitored with the help of in situ quartz crystal microbalance, while application related film properties like chemical composition, physical phase, thickness, density, roughness and sheet resistance were investigated with the help of ex situ measurement techniques. Prior to the evaluation of novel nickel precursors, a benchmark ALD process was developed from the reference nickel precursor (Ni(amd)) and air as a co-reactant. The main goal of developing and optimizing such benchmark ALD process was to extract standard process parameters like second-reactant exposure times, Argon purge times, total process pressure, starting deposition temperature and gas flows. These standard process parameters had to be utilized to shorten the process development task (thus saving precursor consumption) and optimize the sublimation temperature for each novel precursor. The ALD behaviour was checked in terms of growth rate by varying the nickel precursor exposure time, precursor temperature and deposition temperature.

Nickel und Nickel (II) -oxid werden in großem Umfang in fortgeschrittenen elektronischen Geräten verwendet. In der Mikroelektronik-Industrie wird Nickel verwendet werden, um Nickelsilizid bilden. Die Nickelmono Silizid (NiSi) wurde als ausgezeichnetes Material für Source-Drain-Kontaktanwendungen unter 45 nm-CMOS-Technologie entwickelt. Im Vergleich zu anderen Siliziden für die Kontaktanwendungen verwendet wird NiSi wegen seines niedrigen spezifischen Widerstand, niedrigen Kontaktwiderstand, relativ niedrigen Bildungstemperatur und niedrigem Siliziumverbrauchs bevorzugt. Nickel in Nickelbasis-Akkus und ferromagnetischen Direktzugriffsspeicher (RAMs) verwendet. Nickel (II) oxid wird als Transistor-Gate-Oxid und Oxid in resistive RAM genutzt wird. Atomic Layer Deposition (ALD) ist eine spezielle Art der Chemical Vapor Deposition (CVD), das verwendet wird, um sehr glatte sowie homogene Dünnfilme mit hervorragenden Treue auch bei hohen Seitenverhältnissen abzuscheiden. Es basiert auf selbstabschließenden sequentielle Gas-Feststoff-Reaktionen, die eine präzise Steuerung der Filmdicke auf wenige Angström lassen sich auf der Basis. Zur Herstellung der heutigen 3D-elektronische Geräte, sind Technologien wie ALD erforderlich. Trotz der Vielzahl von praktischen Anwendungen von Nickel und Nickel (II) -oxid, sind einige Nickelvorstufen zur thermischen basierend ALD erhältlich. Darüber hinaus haben diese Vorstufen bei schlechten Filmeigenschaften führte und die Prozesseigenschaften wurden ebenfalls begrenzt. Daher in dieser Masterarbeit mussten die Eigenschaften verschiedener neuartiger Nickelvorstufen zu bewerten. Alle neuen Vorstufen heteroleptische (verschiedene Arten von Liganden) und Komplexe wurden vom Hersteller speziell zur thermischen basierend ALD aus reinem Nickel mit H 2 als ein Co-Reaktionsmittel gestaltet. Um die neuartige Vorläufer zu untersuchen, wurde eine neue Methode entwickelt, um kleine Mengen in einer sehr zeitsparend (bis zu 2 g) von Ausgangsstoffen zu testen. Diese Methodologie beinhaltet: TGA / DTA-Kurve analysiert der Vorstufen, thermische Stabilitätstests in dem die Vorläufer (<0,1 g) wurden bei erhöhter Temperatur in einer abgedichteten Umgebung für mehrere Stunden wurde die Abscheidung Experimenten und Film Charakterisierungen erhitzt. Die Abscheidungen wurden mit Hilfe der in situ Quarzmikrowaage überwacht, während die anwendungsbezogenen Filmeigenschaften, wie chemische Zusammensetzung, physikalische Phase, Dicke, Dichte, Härte und Schichtwiderstand wurden mit Hilfe von ex situ Messverfahren untersucht. Vor der Evaluierung neuartiger Nickelvorstufen ein Benchmark ALD-Prozess war vom Referenznickelvorläufer (Ni (AMD)) und Luft als Reaktionspartner entwickelt. Das Hauptziel der Entwicklung und Optimierung von solchen Benchmark-ALD-Prozess war es, Standard-Prozessparameter wie zweite Reaktionspartner Belichtungszeiten, Argonspülung Zeiten, gesamtprozessdruck, beginnend Abscheidungstemperatur und Gasströme zu extrahieren. Diese Standard-Prozessparameter mussten verwendet, um die Prozessentwicklung Aufgabe (das spart Vorläufer Verbrauch) zu verkürzen und die Sublimationstemperatur Optimierung für jede neuartige Vorstufe werden. Die ALD Verhalten wurde in Bezug auf die Wachstumsrate durch Variation des Nickelvorläuferbelichtungszeit, Vorläufer Temperatur und Niederschlagstemperatur überprüft.:Lists of Abbreviations and Symbols VIII Lists of Figures and Tables XIV 1 Introduction 1 I Theoretical Part 3 2 Nickel and Nickel Oxides 4 2.1 Introduction and Existence 5 2.2 Material properties of Nickel and Nickel Oxide 5 2.3 Application in electronic industry 5 3 Atomic Layer Deposition 7 3.1 History 8 3.2 Definition 8 3.3 Features of thermal-ALD 8 3.3.1 ALD growth mechanism – an ideal view 8 3.3.2 ALD growth behaviour 10 3.3.3 Growth mode 11 3.3.4 ALD temperature window 11 3.4 Benefits and limitations 12 3.5 Precursor properties for thermal-ALD 13 3.6 ALD & CVD of Nickel – A literature survey 13 4 Metrology 17 4.1 Thermal analysis of precursors 18 4.2 Film and growth characterization 21 4.2.1 Quartz Crystal Microbalance 21 4.2.2 Spectroscopic Ellipsometry 24 4.2.3 X-Ray Photoelectron Spectroscopy 28 4.2.4 Scanning Electron Microscopy 29 4.2.5 X-Ray Reflectometry and X-Ray Diffraction 29 4.2.6 Four Point Probe Technique 20 5 Rapid Thermal Processing 32 5.1 Introduction 33 5.2 Basics of RTP 33 5.3 Nickel Silicides-A literature survey 33 II Experimental Part 36 6 Methodologies 37 6.1 Experimental setup 38 6.2 ALD process 41 6.2.1 ALD process types and substrate setups 41 6.2.2 Process parameters 41 6.3 Experimental procedure 42 6.3.1 Tool preparation 42 6.3.2 Thermal analysis and ALD experiments from nickel precursors 43 6.3.3 Data acquisition and evaluation 44 6.3.4 Characterization of film properties 46 7 Results and discussion 48 7.1 Introduction 49 7.2 QCM verification with Aluminum Oxide ALD process 49 7.3 ALD process from the reference precursor 50 7.3.1 Introduction 50 7.3.2 TG analysis for Ni(amd) precursor 51 7.3.3 Thermal stability test for Ni(amd) 51 7.3.4 ALD process optimization 52 7.3.5 Film properties 54 7.4 Evaluating the novel Nickel precursors 55 7.4.1 Screening tests for precursor P1 55 7.4.2 Screening tests for precursor P2 62 7.4.3 Screening tests for precursor P3 66 7.4.4 Screening tests for precursor P4 70 7.4.5 Screening tests for precursor P5 72 7.5 Comparison of all nickel precursors used in this work 74 8 Conclusions and outlook 77 References 83 III Appendix 101 A Deposition temperature control & Ellipsometry model 102 B Gas flow plan 105 / Nickel and nickel(II) oxide are widely used in advanced electronic devices . In microelectronic industry, nickel is used to form nickel silicide. The nickel mono-silicide (NiSi) has emerged as an excellent material of choice for source-drain contact applications below 45 nm node CMOS technology. As compared to other silicides used for the contact applications, NiSi is preferred because of its low resistivity, low contact resistance, relatively low formation temperature and low silicon consumption. Nickel is used in nickel-based rechargeable batteries and ferromagnetic random access memories (RAMs). Nickel(II) oxide is utilized as transistor gate-oxide and oxide in resistive RAMs. Atomic Layer Deposition (ALD) is a special type of Chemical Vapor Deposition (CVD) technique, that is used to deposit very smooth as well as homogeneous thin films with excellent conformality even at high aspect ratios. It is based on self-terminating sequential gas-solid reactions that allow a precise control of film thickness down to few Angstroms. In order to fabricate todays 3D electronic devices, technologies like ALD are required. In spite of huge number of practical applications of nickel and nickel(II) oxide, a few nickel precursors are available for thermal based ALD. Moreover, these precursors have resulted in poor film qualities and the process properties were also limited. Therefore in this master thesis, the properties of various novel nickel precursors had to be evaluated. All novel precursors are heteroleptic (different types of ligands) complexes and were specially designed by the manufacturer for thermal based ALD of pure nickel with H 2 as a co-reactant. In order to evaluate the novel precursors, a new methodology was designed to test small amounts (down to 2 g) of precursors in a very time efficient way. This methodology includes: TGA/DTA curve analyses of the precursors, thermal stability tests in which the precursors (< 0.1 g) were heated at elevated temperatures in a sealed environment for several hours, deposition experiments, and film characterizations. The depositions were monitored with the help of in situ quartz crystal microbalance, while application related film properties like chemical composition, physical phase, thickness, density, roughness and sheet resistance were investigated with the help of ex situ measurement techniques. Prior to the evaluation of novel nickel precursors, a benchmark ALD process was developed from the reference nickel precursor (Ni(amd)) and air as a co-reactant. The main goal of developing and optimizing such benchmark ALD process was to extract standard process parameters like second-reactant exposure times, Argon purge times, total process pressure, starting deposition temperature and gas flows. These standard process parameters had to be utilized to shorten the process development task (thus saving precursor consumption) and optimize the sublimation temperature for each novel precursor. The ALD behaviour was checked in terms of growth rate by varying the nickel precursor exposure time, precursor temperature and deposition temperature.:Lists of Abbreviations and Symbols VIII Lists of Figures and Tables XIV 1 Introduction 1 I Theoretical Part 3 2 Nickel and Nickel Oxides 4 2.1 Introduction and Existence 5 2.2 Material properties of Nickel and Nickel Oxide 5 2.3 Application in electronic industry 5 3 Atomic Layer Deposition 7 3.1 History 8 3.2 Definition 8 3.3 Features of thermal-ALD 8 3.3.1 ALD growth mechanism – an ideal view 8 3.3.2 ALD growth behaviour 10 3.3.3 Growth mode 11 3.3.4 ALD temperature window 11 3.4 Benefits and limitations 12 3.5 Precursor properties for thermal-ALD 13 3.6 ALD & CVD of Nickel – A literature survey 13 4 Metrology 17 4.1 Thermal analysis of precursors 18 4.2 Film and growth characterization 21 4.2.1 Quartz Crystal Microbalance 21 4.2.2 Spectroscopic Ellipsometry 24 4.2.3 X-Ray Photoelectron Spectroscopy 28 4.2.4 Scanning Electron Microscopy 29 4.2.5 X-Ray Reflectometry and X-Ray Diffraction 29 4.2.6 Four Point Probe Technique 20 5 Rapid Thermal Processing 32 5.1 Introduction 33 5.2 Basics of RTP 33 5.3 Nickel Silicides-A literature survey 33 II Experimental Part 36 6 Methodologies 37 6.1 Experimental setup 38 6.2 ALD process 41 6.2.1 ALD process types and substrate setups 41 6.2.2 Process parameters 41 6.3 Experimental procedure 42 6.3.1 Tool preparation 42 6.3.2 Thermal analysis and ALD experiments from nickel precursors 43 6.3.3 Data acquisition and evaluation 44 6.3.4 Characterization of film properties 46 7 Results and discussion 48 7.1 Introduction 49 7.2 QCM verification with Aluminum Oxide ALD process 49 7.3 ALD process from the reference precursor 50 7.3.1 Introduction 50 7.3.2 TG analysis for Ni(amd) precursor 51 7.3.3 Thermal stability test for Ni(amd) 51 7.3.4 ALD process optimization 52 7.3.5 Film properties 54 7.4 Evaluating the novel Nickel precursors 55 7.4.1 Screening tests for precursor P1 55 7.4.2 Screening tests for precursor P2 62 7.4.3 Screening tests for precursor P3 66 7.4.4 Screening tests for precursor P4 70 7.4.5 Screening tests for precursor P5 72 7.5 Comparison of all nickel precursors used in this work 74 8 Conclusions and outlook 77 References 83 III Appendix 101 A Deposition temperature control & Ellipsometry model 102 B Gas flow plan 105

Em ultimas décadas, a conversão de alcanos leves em suas correspondentes olefinas tem sido objeto de intensas pesquisas, impulsionadas inclusive pelo aumento crescente da demanda do propileno como um importante produto petroquímico. A desidrogenação oxidativa (ODH) do propano representa uma via alternativa promissor para a produção de propeno, ao apresentar-se como uma reação exotérmica e não limitada termodinamicamente. Diferentes óxidos suportados ou mistos têm sido desenvolvidos com a finalidade de aumentar a atividade e seletividade em relação as olefinas. Metais alcalinos são importantes agentes promotores que proporcionam uma melhor seletividade as olefinas devido a redução da acidez e aumento da basicidade da superfície do catalisador. A proposta deste presente trabalho foi desenvolver metodologias de síntese de catalisadores de oxido de vanádio suportado em aluminas de diferentes fases cristalinas e dopados com sódio ou potássio a fim de avalia-los em testes catalíticos de desidrogenação oxidativa do propano. Para tanto, foram utilizadas as seguintes técnicas de caracterização: volumetria N2, difratometria de raios X (DRX) e redução a temperatura programada (RTP). As características acidas e/ou básicas dos suportes e catalisadores foram avaliadas pelas reações de decomposição de isopropanol. / In recent decades, the conversion of light alkanes to their corresponding olefins has been the subject of intense research, mainly driven by the increasing demand of propylene as an important petrochemical product. Oxidative dehydrogenation (ODH) propane is a promising alternative way to propylene production, which it is presented as an exothermic reaction and not limited thermodynamically. Different supported or mixed oxides have been developed in order to increase the activity and selectivity to olefins. Alkali metals are important promoters, which provide improved selectivity to olefins due to reduction of acidity and increasing basicity of the catalyst surface. The purpose of the present study was to develop synthesis methods of vanadium oxide catalysts supported on alumina of the different crystalline phases and doped with sodium or potassium in order to evaluate them in catalytic tests of propane oxidative dehydrogenation. For in such a way, the following characterization techniques were used: N2 volumetry, X-ray diffractometry (XRD) and temperature programmed reduction (TPR). The properties acid and/or basic of supports and catalysts were evaluated by the isopropanol decomposition reaction.

Em ultimas décadas, a conversão de alcanos leves em suas correspondentes olefinas tem sido objeto de intensas pesquisas, impulsionadas inclusive pelo aumento crescente da demanda do propileno como um importante produto petroquímico. A desidrogenação oxidativa (ODH) do propano representa uma via alternativa promissor para a produção de propeno, ao apresentar-se como uma reação exotérmica e não limitada termodinamicamente. Diferentes óxidos suportados ou mistos têm sido desenvolvidos com a finalidade de aumentar a atividade e seletividade em relação as olefinas. Metais alcalinos são importantes agentes promotores que proporcionam uma melhor seletividade as olefinas devido a redução da acidez e aumento da basicidade da superfície do catalisador. A proposta deste presente trabalho foi desenvolver metodologias de síntese de catalisadores de oxido de vanádio suportado em aluminas de diferentes fases cristalinas e dopados com sódio ou potássio a fim de avalia-los em testes catalíticos de desidrogenação oxidativa do propano. Para tanto, foram utilizadas as seguintes técnicas de caracterização: volumetria N2, difratometria de raios X (DRX) e redução a temperatura programada (RTP). As características acidas e/ou básicas dos suportes e catalisadores foram avaliadas pelas reações de decomposição de isopropanol. / In recent decades, the conversion of light alkanes to their corresponding olefins has been the subject of intense research, mainly driven by the increasing demand of propylene as an important petrochemical product. Oxidative dehydrogenation (ODH) propane is a promising alternative way to propylene production, which it is presented as an exothermic reaction and not limited thermodynamically. Different supported or mixed oxides have been developed in order to increase the activity and selectivity to olefins. Alkali metals are important promoters, which provide improved selectivity to olefins due to reduction of acidity and increasing basicity of the catalyst surface. The purpose of the present study was to develop synthesis methods of vanadium oxide catalysts supported on alumina of the different crystalline phases and doped with sodium or potassium in order to evaluate them in catalytic tests of propane oxidative dehydrogenation. For in such a way, the following characterization techniques were used: N2 volumetry, X-ray diffractometry (XRD) and temperature programmed reduction (TPR). The properties acid and/or basic of supports and catalysts were evaluated by the isopropanol decomposition reaction.

Le procédé thermique rapide (RTP : Rapid Thermal Process) est très utilisé dans la fabrication des composants de microélectronique. Il correspond à plusieurs étapes clés comme les recuits d'implantation, de siliciuration, d'oxydation, de nitruration et le dépôt de couches minces par CVD (Chemical Vapor Deposition). Il consiste à chauffer un nombre restreint de substrats de silicium par des lampes infrarouges permettant ainsi des durées de traitement très courtes. L'enjeu majeur est d'obtenir une température uniforme à la surface du substrat.Le but de cette étude est de mieux comprendre les relations entre le chauffage par les lampes infrarouges et le profil de température d'un substrat de silicium dans un système thermique rapide, le système AS-One 150, en vue d'améliorer l'uniformité de la température du substrat de silicium. La modélisation du système est réalisée en deux et trois dimensions. La modélisation approfondie d'une lampe infrarouge est aussi effectuée pour mieux cerner les paramètres des lampes à entrer dans les modèles en deux et trois dimensions. Les modélisations ont été réalisées à l'aide du logiciel CFD'ACE. Les équations de conservation de la masse et de la chaleur ont été considérées et l'équation de transfert radiatif est résolue selon un schéma utilisant la méthode Monte-Carlo. Les modèles sont validés en confrontant les profils de température du substrat et les températures des filaments à des mesures expérimentales. Des simulations avec le modèle en deux dimensions sont par la suite réalisées pour mettre en évidence l'influence du hublot en quartz sur le profil de température du substrat et inversement. Différents paramètres du modèle sont modifiés comme les propriétés radiatives du substrat et du hublot ou la diffusivité. Cette corrélation est ensuite expliquée par les propriétés d'émission, d'absorption, de réflexion et de transmission du substrat de silicium et du hublot en quartz et par l'influence des parois froides du réacteur à 300 K. Les différents phénomènes expliquant la forme du profil de température du substrat sont alors posés dans un schéma en quatre phases. La discussion de ce schéma permet d'aboutir à deux idées pour améliorer l'uniformité de la température du substrat. Ces dernières consistent à modifier les propriétés radiatives au niveau de la surface inférieure du hublot pour laisser passer le rayonnement des lampes et éviter l'absorption du rayonnement émis par le substrat de silicium selon deux configurations. Ces idées sont alors vérifiées par des simulations numériques en deux dimensions. Une future mise en œuvre expérimentale est finalement envisagée.

ESKOM is moving towards a price structure for electricity which reflects, as far as possible, the real cost of generation. It is called real time pricing (RTP). ESKOM developed this cost structure to coax customers to use more electricity in off-peak periods (low cost of generation) and less electricity in peak periods (high cost of generation). However, many industries do not effectively use these price offerings from ESKOM to the detriment of themselves and ESKOM. In previous research improvements to this situation for the South African mining industry were investigated. ESKOM funded research to find the potential for load shifting on mines using RTP. The RTP investigation focused on the supply side management (SSM) in the mining context of underground services on gold and platinum mines. Elements investigated included the ventilation, cooling and pumping (VCP) systems. (Except for pumps, these plants are generally installed aboveground.) Previous research showed a national RTP and SSM potential to shift 500 MW of electrical load for a period of 5 hours. Through the previous research it became clear that the mines were previously able to react partially to the price signals. However, it was proved by the research that the full load shift potential can only be realised through the use of integrated dynamic simulation and optimisation. An even higher potential exists for load shift and electricity efficiency through demand side management (DSM) on the underground services. Therefore, if underground DSM strategies are combined with SSM strategies, a further and much bigger potential can be exploited to the benefit of ESKOM and the mines. Due to these factors this study was undertaken. Three case study mines were identified for this study. They are Kopanang and Target, both gold mines, and Amandelbult, a platinum mine. The DSM potential on each of these mines was calculated using simulation, calibration, verification and optimisation. These results were presented to mine management to negotiate the implementation of the proposed strategies on one of the mines. Kopanang's management agreed to the implementation of these strategies for a trial period of 3 months after which the success would be evaluated. The results of the implementation, together with the case study results, were used to calculate the national DSM potential in the mining sector through extrapolation. The DSM potential amounts to 650 MW of load per day as well as 5% on electricity consumption. This amounts to a potential saving of R72.1 million per year using current tariffs. This means that ESKOM can save about R5000 million on the building of a new power station to supply the equivalent load to the DSM potential. Now that the national impact has been calculated and discussed, all these findings must be used to motivate the implementation of these strategies throughout the mining sector. A similar project can be undertaken to look at possible DSM strategies in the industrial sector. This might prove to be more difficult as the electricity intensive systems are mostly all linked to the final production. In the mind of management this out-weighs the possible cost savings that can be achieved. ESKOM and the NER will have to rethink their strategy. Through DSM and load shifting actions alone the pending electricity crisis will not be averted. The current tariff structures should be amended to not only reflect the true cost of electricity but also provide incentive for DSM and load shifting. Another problem that must be addressed to achieve the DSM targets set for 2007 is the time that it takes to complete the study as well as the implementation time. Software can easily be created to help in the speeding up of the case study itself, as the process and steps followed, as well as models used, are very generic (at least in the gold and platinum mining sector). / Thesis (Ph.D. (Mechanical Engineering))--North-West University, Potchefstroom Campus, 2004.

ESKOM is moving towards a price structure for electricity which reflects, as far as possible, the real cost of generation. It is called real time pricing (RTP). ESKOM developed this cost structure to coax customers to use more electricity in off-peak periods (low cost of generation) and less electricity in peak periods (high cost of generation). However, many industries do not effectively use these price offerings from ESKOM to the detriment of themselves and ESKOM. In previous research improvements to this situation for the South African mining industry were investigated. ESKOM funded research to find the potential for load shifting on mines using RTP. The RTP investigation focused on the supply side management (SSM) in the mining context of underground services on gold and platinum mines. Elements investigated included the ventilation, cooling and pumping (VCP) systems. (Except for pumps, these plants are generally installed aboveground.) Previous research showed a national RTP and SSM potential to shift 500 MW of electrical load for a period of 5 hours. Through the previous research it became clear that the mines were previously able to react partially to the price signals. However, it was proved by the research that the full load shift potential can only be realised through the use of integrated dynamic simulation and optimisation. An even higher potential exists for load shift and electricity efficiency through demand side management (DSM) on the underground services. Therefore, if underground DSM strategies are combined with SSM strategies, a further and much bigger potential can be exploited to the benefit of ESKOM and the mines. Due to these factors this study was undertaken. Three case study mines were identified for this study. They are Kopanang and Target, both gold mines, and Amandelbult, a platinum mine. The DSM potential on each of these mines was calculated using simulation, calibration, verification and optimisation. These results were presented to mine management to negotiate the implementation of the proposed strategies on one of the mines. Kopanang's management agreed to the implementation of these strategies for a trial period of 3 months after which the success would be evaluated. The results of the implementation, together with the case study results, were used to calculate the national DSM potential in the mining sector through extrapolation. The DSM potential amounts to 650 MW of load per day as well as 5% on electricity consumption. This amounts to a potential saving of R72.1 million per year using current tariffs. This means that ESKOM can save about R5000 million on the building of a new power station to supply the equivalent load to the DSM potential. Now that the national impact has been calculated and discussed, all these findings must be used to motivate the implementation of these strategies throughout the mining sector. A similar project can be undertaken to look at possible DSM strategies in the industrial sector. This might prove to be more difficult as the electricity intensive systems are mostly all linked to the final production. In the mind of management this out-weighs the possible cost savings that can be achieved. ESKOM and the NER will have to rethink their strategy. Through DSM and load shifting actions alone the pending electricity crisis will not be averted. The current tariff structures should be amended to not only reflect the true cost of electricity but also provide incentive for DSM and load shifting. Another problem that must be addressed to achieve the DSM targets set for 2007 is the time that it takes to complete the study as well as the implementation time. Software can easily be created to help in the speeding up of the case study itself, as the process and steps followed, as well as models used, are very generic (at least in the gold and platinum mining sector). / Thesis (Ph.D. (Mechanical Engineering))--North-West University, Potchefstroom Campus, 2004.

This Master’s thesis deals in detail with the SIP protocol – a method of communication between two entities, various types of transmitted messages and their content. Few SIP libraries are introduced and two of them are used for development of an application for audio/video conference-calls. Compilation of OPAL and PTlib libraries for Windows 7 Professional (64bit) is described, and problems resulting from lack of information provided by authors. New improved “how to build” is presented. At the end, paper focuses on several ways of development of mentioned application.