De maneira a melhorar o desempenho de um Transistor de Efeito de Campo Metal-Óxido-Semicondutor (MOSFET), o germânio (Ge) é um forte candidato para substituir o silício (Si) como semicondutor, devido a sua alta mobilidade dos portadores de carga. Contudo, o filme de dióxido de germânio (GeO2) sobre Ge é solúvel em água e suas propriedades elétricas inferiores. Nesse sentido, a proposta desta dissertação de Mestrado é oxinitretar termicamente filmes de GeO2 em atmosfera de óxido nítrico (15NO), de maneira a melhorar as propriedades elétricas e físico-químicas dessas estruturas. Inicialmente, as amostras foram limpas quimicamente usando uma mistura de peróxido de hidrogênio (H2O2) e ácido clorídrico + água (HCl + H2O, 4:1). Os filmes de GeO2 foram crescidos termicamente sobre Ge usando atmosfera de oxigênio enriquecido 97% no isótopo de massa 18 (18O), com parâmetros na qual geraram um filme com espessura de ~5 nm. As oxinitretações foram realizadas em um forno térmico rápido com atmosfera de 15NO, nas temperaturas variando de 400-600°C, nos tempos de 1 a 5 minutos. O objetivo da oxinitretação foi criar um filme de oxinitreto de germânio (GeOxNy) com propriedades físico-químicas satisfatórias para a indústria de microeletrônica. Também foram realizados recozimentos térmicos em atmosfera inerte com objetivo de testar a estabilidade térmicas dos filmes de GeOxNy. Análise com Reação Nuclear (NRA) e Espectrometria de Retroespalhamento Rutherford em geometria de canalização (RBS-c) foram utilizadas para quantificar a quantidade total de oxigênio 18O e 16O, respectivamente. NRP também foi utilizada de modo a determinar o perfil de concentração em função da profundidade para as espécies de 18O e 15N. De modo a investigar a composição química das amostras, Espectroscopia de Fotoelétrons induzidos por raio-X (XPS) foi utilizada. Pelas análises por RBS e NRA do 18O, podemos observar que ocorre troca entre os isótopos de 18O e 16O para todas das temperaturas de oxinitretação. Este resultado corrobora com estudos recentes da literatura. Para as amostras oxinitretadas em 5 minutos a 500°C e todas as amostras oxinitretadas a 550°C e 600°C, ocorre troca isotópica completa. Observamos ainda por NRP que o 15N é incorporado mais superficialmente para as temperaturas de oxinitretação até 550°C. Resultados de XPS indicam formação maior de GeOxNy próximos da superfície das amostras e para temperaturas e/ou tempos maiores. Testes de estabilidade térmica indicam que a incorporação de nitrogênio mais próximo das superfície da amostra inibe a dessorção das espécies de GeO. As amostras que não foram oxinitretadas acabam dessorvendo quase por completo o filme de GeO2 quando realizados os recozimentos térmicos. Este efeito do nitrogênio incorporado próximo da superfície tem grande potencial para uso em camadas interfaciais entre semicondutor e dielétricos de porta. / In order to improve the performance of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), germanium is a good candidate to replace silicon as semiconductor due to its higher charge carrier mobility. However, the germanium dioxide (GeO2) film over Ge is water soluble and produces poor electrical characteristics. In this way, this Master dissertation proposes thermal oxinitridation of the GeO2 films in nitric oxide (15NO) atmosphere in order to improve its electrical and physico-chemical characteristics. Samples were first cleaned using a mixture of hydrogen peroxide (H2O2) and hydrogen chloride + water (HCl + H2O, 4:1). GeO2 films were thermally grown on Ge using oxygen enriched in 97% in the isotope of mass 18, which generated ~5 nm thick film. Oxinitridation was performed in a rapid thermal furnace under 15NO atmosphere, at the 400-600°C temperature range, and 1-5 minutes time range. The goal was to form a germanium oxinitride film (GeOxNy) with physico-chemical properties that are satisfactory for microelectronics industry. We also performed thermal annealing in inert atmosphere to test the thermal stability of GeOxNy films. Nuclear Reaction Analysis (NRA) and Rutherford Backscattering Spectrometry in channeled geometry (RBS-c) were used to quantify the total amount of oxygen 18O and 16O, respectively. NRP was also performed to determine the 18O and 15N depth distribution. In order to investigate the chemical composition of the samples, X-ray Photoelectron Spectroscopy (XPS) was performed. RBS and NRA analysis showed isotopic exchange between 18O and 16O for all temperatures investigated. This result corroborates previous literature studies. Samples oxynitrided in 5 minutes at 500°C and all the samples oxinitrided at 550-600°C showed complete isotopic exchange. We also observed by NRP that nitrogen incorporation occurs more superficially until 550°C. XPS results indicate more formation of GeOxNy near the surface of the samples and for higher temperatures and/or time of oxinitredation. Thermal stability results indicated that the nitrogen incorporation near the sample surface inhibit the GeO desorption. On the other hand, samples that were not oxynitrided have almost all the GeO2 desorbed when thermal annealing is performed.

This master‘s thesis deals with radiation damage of reactor pressure vessels, specifically of NPP Dukovany Unit No. 3. In general damage mechanisms of reactor steels are described and possibilities of monitoring of material degradation and its recovery used at NPP’s all over the world are mentioned as well. A practical part of the thesis is focused on interpretation of analyses carried out with the assistance of MOBY DICK code. The ground of these analyses is a neutron fluence value development on different locations of RPV for the whole life of operation up to 24th cycle. The analyses results are put into context with performed in-service inspections. The thesis follows up with neutron fluence computation for the future cycles containing new types of nuclear fuel up to 34th cycle. The outcome of practical part of the master‘s thesis is a comparison between new types of nuclear fuel with respect to radiation damage of RPV’s.

No description available.

La conception des futures générations de capteurs d'images CMOS, nécessite l'intégration de structures 3D telles que les tranchées profondes d'isolation, ou encore l'adoption de nouvelles architectures telles que les capteurs d'images à illumination face arrière. Cependant, l'intégration de telles architectures engendre l'apparition de nouvelles interfaces Si/SiO2, pouvant être la source d'un fort courant d'obscurité Idark, dégradant considérablement les performances électro-optiques du capteur. Ainsi, dans le but d'éliminer le Idark et d'augmenter l'efficacité de collecte et de confinement des photoporteurs au sein de la photodiode, la passivation de ces interfaces par l'introduction d'une jonction fortement dopée a été étudiée. D'une part, la passivation de la face arrière a été réalisée par implantation ionique activée par recuit laser pulsé. Grâce à un traitement très court et localisé, le recuit laser a démontré sa capacité à réaliser des jonctions minces et très abruptes. Une très bonne qualité cristalline ainsi que des taux d'activation avoisinant les 100% ont pu être atteint dans le mode fusion. Le mode sous-fusion quant à lui permet d'obtenir des résultats prometteurs en multipliant le nombre de tir laser. Les résultats électriques ont permis de distinguer les conditions optimales d'implantation et de recuit pour l'achèvement d'un faible niveau de Idark comparable à la référence en vigueur ainsi qu'une bonne sensibilité. Le deuxième axe d'étude s'est intéressé à la passivation des flancs des DTI par épitaxie sélective dopée in-situ. Des dépôts très uniformes de la cavité accompagnés d'une très bonne conformité de dopage le long des tranchées ont pu être réalisés. Les résultats sur lot électrique ont montré un très faible niveau de Idark supplantant la référence en vigueur / In order to maintain or enhance the electro-optical performances while decreasing the pixel size, advanced CMOS Image Sensors (CIS) requires the implementation of new architectures. For this purpose, deep trenches for pixel isolation (DTI) and backside illumination (BSI) have been introduced as ones of the most promising candidates. The major challenge of these architectures is the high dark current level (Idark) due to the generation/recombination centers present at both, DTI sidewalls and backside surfaces. Therefore, the creation of very shallow doped junctions at these surfaces reducing Idark and further crosstalk by drifting the photo-generated carriers to the photodiode region appears as key process step for introducing these architectures. For the backside surface passivation, a very shallow doped layer can be achieved by low-energy implantation followed by very short and localized heating provided by pulsed laser annealing (PLA). In the melt regime, box-shaped profiles with activation rates close to 100% and excellent crystalline quality have been achieved. The non-melt regime shows some potential, especially for multiple pulse conditions. In the optimal process conditions, very low level of Idark comparable to the standard reference has been achieved. In the other side, the passivation of DTI sidewalls has been performed by in-situ doped Epitaxy. Deposited layers with good uniformity and doping conformity all along the DTI cavity have been achieved. The electrical results show Idark values lower than the standard reference

Chemically ordered FePt is one of the most promising materials to reach the ultimate limitations in storage density of future magnetic recording devices due to its high uniaxial magnetocrystalline anisotropy and a corrosion resistance superior to rare-earth based magnets. In this study, FePt and FePt/Cu bilayers have been sputter deposited at room temperature onto thermally oxidized silicon wafers, glass substrates and self-assembled arrays of spherical SiO2 particles with diameters down to 10 nm. Millisecond flash lamp annealing, as well as conventional rapid thermal annealing was employed to induce the phase transformation from the chemically disordered A1 phase into the chemically ordered L10 phase. The influence of the annealing temperature, annealing time and the film thickness on the ordering transformation and (001) texture evolution of FePt films with near equiatomic composition was studied. Whereas flash lamp annealed FePt films exhibit a polycrystalline morphology with high chemical L10 order, rapid thermal annealing can lead to the formation of chemically ordered FePt fifilms with (001) texture on amorphous SiO2/Si substrates. The resultant high perpendicular magnetic anisotropy and large coercivities up to 40 kOe are demonstrated. Simultaneuosly to the ordering transformation, rapid thermal annealing to temperatures exceeding 600 °C leads to a break up of the continuous FePt film into separated islands. This dewetting behavior was utilized to create regular arrays of FePt nanostructures on SiO2 particle templates with periods down to 50 nm. The addition of Cu improves the (001) texture formation and chemcial ordering for annealing temperatures T < 600 °C. In addition, the magnetic anisotropy and the coercivity of the ternary FePtCu alloy can be effectively tailored by adjusting the Cu content. The prospects of FePtCu based exchange spring media, as well as the magnetic properties of FePtCu nanostructures fabricated using e-beam and nanoimprint lithography have been investigated.

Ce mémoire présente les efforts effectués pour réduire l'angle de perte de couches de pentoxyde de tantale amorphes telles qu'utilisées pour les miroirs de LIGO. Afin d'améliorer le niveau de relaxation des couches, celles-ci ont été déposées par pulvérisation cathodique magnétron à des températures allant de 50 °C à 480 °C, elles ont subi un recuit thermique rapide, elles ont été implantées par des ions d'oxygène, elles ont été déposées par pulvérisation cathodique magnétron en appliquant une tension de polarisation sur le substrat lors du dépôt allant de 0 V à -450 V et elles ont été déposées par pulvérisation cathodique magnétron pulsée à haute puissance dans le cadre de différentes expériences. L'angle de perte, l'épaisseur, la rugosité, l'indice de réfraction, la composition atomique, la contrainte, l'état de relaxation et le module de Young des couches ont par la suite été trouvés à l'aide de l'ellipsométrie spectralement résolue, la spectrométrie de rétrodiffusion de Rutherford, la détection des reculs élastiques, la spectroscopie Raman, la diffraction de rayons X et la nano-indentation. Il a été trouvé que la température de dépôt améliorait légèrement le degré de relaxation des couches jusqu'à 250 °C, mais qu'elle avait peu d'impact après recuit. Aussi, lors de dépôt à température de la pièce, une forte tension de polarisation réduit l'angle de perte, mais cet effet est encore une fois perdu suite au recuit. Les autres méthodes mentionnées ci-dessus n'ont pas influencé le degré de relaxation des couches selon l'angle de perte, la spectroscopie Raman et la diffraction de rayons X. Cette recherche a été réalisée avec le support financier du CRSNG et du FRQNT (numéro de dossier 206976). / This master's thesis presents the experiments made to reduce the loss angle of tantala coatings similar to those used in LIGO. To improve the relxation level of the coatings they were deposited by magnetron sputtering at temperatures varying from 50 °C to 480 °C. They were also subjected to rapid thermal annealing, and oxygen implantation. In another experiment, the coatings were deposited by magnetron sputtering with substrate biasing varying from 0 V to -450 V at room temperature and at 250 °C. Finally, the coatings of tantala were deposited by high power impulse magnetron sputtering. The loss angle, thickness, roughness, refractive index, atomic composition, stress, the relaxation state and Young's modulus of the coatings were characterized using spectroscopic ellipsometry, Rutherford backscattering, elastic recoil detection, Raman spectroscopy, X-ray diffraction and nanoindentation. It was found that the deposition temperature improved the loss angle until it reached 250 °C. However, annealing the coatings had a superior impact and the influence of the deposition temperature was not visible after annealing. When was applied a high bias to the susbtrate at room temperature, the obtained coating was slightly more relaxed than when a low bias was applied but this effect is, once again, insignificant after annealing. The other methods of deposition mentioned did not improve the loss angle or modify the relaxation state found by Raman spectroscopy and X-ray diffraction of the tantala coatings. This research was made with the financial support of the NSERC and of the FRQNT (file number 206976).

Chemically ordered FePt is one of the most promising materials to reach the ultimate limitations in storage density of future magnetic recording devices due to its high uniaxial magnetocrystalline anisotropy and a corrosion resistance superior to rare-earth based magnets. In this study, FePt and FePt/Cu bilayers have been sputter deposited at room temperature onto thermally oxidized silicon wafers, glass substrates and self-assembled arrays of spherical SiO2 particles with diameters down to 10 nm. Millisecond flash lamp annealing, as well as conventional rapid thermal annealing was employed to induce the phase transformation from the chemically disordered A1 phase into the chemically ordered L10 phase. The influence of the annealing temperature, annealing time and the film thickness on the ordering transformation and (001) texture evolution of FePt films with near equiatomic composition was studied. Whereas flash lamp annealed FePt films exhibit a polycrystalline morphology with high chemical L10 order, rapid thermal annealing can lead to the formation of chemically ordered FePt fifilms with (001) texture on amorphous SiO2/Si substrates. The resultant high perpendicular magnetic anisotropy and large coercivities up to 40 kOe are demonstrated. Simultaneuosly to the ordering transformation, rapid thermal annealing to temperatures exceeding 600 °C leads to a break up of the continuous FePt film into separated islands. This dewetting behavior was utilized to create regular arrays of FePt nanostructures on SiO2 particle templates with periods down to 50 nm. The addition of Cu improves the (001) texture formation and chemcial ordering for annealing temperatures T < 600 °C. In addition, the magnetic anisotropy and the coercivity of the ternary FePtCu alloy can be effectively tailored by adjusting the Cu content. The prospects of FePtCu based exchange spring media, as well as the magnetic properties of FePtCu nanostructures fabricated using e-beam and nanoimprint lithography have been investigated.

<p>Beta-gallium oxide (<i>β</i>-Ga₂O₃) is an emerging wide bandgap semiconductor for next generation power devices which offers the potential to replace GaN and SiC. It has an ultra-wide bandgap (UWBG) of 4.8 eV and a corresponding <i>E</i>_brof 8 MV/cm. <i>β</i>-Ga₂O₃also possesses a decent intrinsic electron mobility limit of 250 cm²/V<i>·</i>s, yielding high Baliga’s figure of merit of 3444. In addition, the large bandgap of <i>β</i>-Ga₂O₃gives stability in harsh environment operation at high temperatures. </p> <p>Although low-cost large-size <i>β</i>-Ga₂O₃native bulk substrates can be realized by melt growth methods, the unique property that (100) surface of <i>β</i>-Ga₂O₃has a large lattice constant of 12.23 Å allows it to be cleaved easily into thin and long nano-membranes. Therefore, <i>β</i>-Ga₂O₃FETs on foreign substrates by transferring can be fabricated and investigated before <i>β</i>-Ga₂O₃epitaxy technology becomes mature and economical viable. Moreover, integrating <i>β</i>-Ga₂O₃on high thermal conductivity materials has an advantage in terms of suppressing self-heating effects. </p><p>In this dissertation, structural and material innovations to overcome and improve critical challenges are summarized as follows: 1) Top-gate nano-membrane <i>β</i>-Ga₂O₃FETs on a high thermal conductivity diamond substrate with record high maximum drain current densities are demonstrated. The reduced self-heating effect due to high thermal conductivity of the substrate was verified by thermoreflectance measurement. 2) Local electro-thermal effect by electrical bias was applied to enhance the electrical performance of devices and improvements of electrical properties were shown after the annealing. 3) Thin thermal bridge materials such as HfO₂and ZrO₂were inserted between <i>β</i>-Ga₂O₃and a sapphire substrate to reduce self heating effects without using a diamond substrate. The improved thermal performance of the device was analyzed by phonon density of states plots of <i>β</i>-Ga₂O₃and the thin film materials. 4) Nano-membrane tri-gate <i>β</i>-Ga₂O₃FETs on SiO₂/Si substrate fabricated via exfoliation have been demonstrated for the first time. 5) Using the robustness of <i>β</i>-Ga₂O₃in harsh environments, <i>β</i>-Ga₂O₃ferroelectric FETs operating as synaptic devices up to 400 °C were demonstrated. The result offers the potential to use the novel device for ultra-wide bandgap logic applications, specifically neuromorphic computing exposed to harsh environments.<br></p>

Les aciers appelés ODS (pour Oxide Dispersion Strengthened), renforcés par une dispersion homogène de nano-oxydes, sont des matériaux de structure avancés pour les futurs réacteurs nucléaires de fusion et de fission. En effet ces nano-oxydes, à base d’Y et Ti, servent comme centres de recombinaison de défauts ponctuels et d'obstacles aux mouvements des dislocations, améliorant de ce fait leur résistance aux radiations et aux températures élevées. La fabrication conventionnelle des aciers ODS est réalisée par broyage mécanique suivi de traitements thermo-mécaniques, et ne permet pas facilement de comprendre les mécanismes physiques conduisant à la précipitation des nano-oxydes, ce qui serait potentiellement utile pour optimiser leur production. La cinétique de formation de ces nano-oxydes peut être étudiée en utilisant une technique alternative, à savoir la synthèse par faisceaux d’ions, qui présente de nombreux avantages, notamment le contrôle précis des paramètres expérimentaux et la possibilité de décorréler divers facteurs contribuant à la cinétique de précipitation. Au cours de cette thèse, cette technique a été utilisée pour étudier la coprécipitation d'ions métalliques (Y et/ou Ti) et d'oxygène implantés dans un alliage modèle Fe-Cr de composition proche de celle typique des aciers ODS commerciaux. Des ions de Y, Ti et O à basse énergie ont été implantés dans des échantillons d'alliage Fe10wt%Cr de haute pureté à température ambiante. Les échantillons implantés ont ensuite été recuits à diverses températures entre 600 à 1100°C pour favoriser la précipitation de nano-oxydes, conformément au principe de cette technique. La microscopie électronique à transmission a été utilisée pour caractériser la structure cristallographique et la composition chimique des nano-oxydes formés lors de trois séries d'expériences. Tout d'abord, l'implantation séquentielle d'ions Ti et O a été mise en œuvre. Un recuit ultérieur a révélé qu’il n’y avait pas de précipitation d'oxyde de titane jusqu’à des températures inférieures à 1000°C, mais la présence de nano-oxydes riches en chrome avec une structure hexagonale de type corundum, qui contiennent une certaine quantité de Ti à des températures suffisamment élevées. Ce n’est qu’après le recuit à 1100°C que des nano-oxydes d’un autre type à cœur enrichi en Ti et coquille enrichie en Cr ont également été observés. Deuxièmement, l'implantation séquentielle d’ions Y et O a entraîné la formation à 800°C de nano-oxydes probablement riches en yttrium. Le recuit à 1100°C a favorisé la croissance des particules identifiées comme étant des nano-oxydes d’yttrium avec une coquille enrichie en Cr. Enfin, une implantation ionique séquentielle de deux ions métalliques (Y et Ti) a été réalisée, suivie d'une implantation d’O. L'ordre d'implantation des ions métalliques s'est révélé crucial pour la précipitation de nano-oxydes lors du recuit ultérieur. Lors de la séquence avec une implantation de Ti en premier, une précipitation d'oxyde riche en chrome de structure corundum hexagonale a été observée, très similaire au cas de l'implantation d’ions Ti et O. En revanche, la séquence avec une implantation d’ions Y en premier a produit des nano-oxydes d'yttrium-titane qui possèdent une structure non identifiable. En résumé, l’étude a démontré la faisabilité de la formation de nano-oxydes de Y, Ti et (Y, Ti) par implantation ionique. La thèse présente la caractérisation détaillée de ces nano-oxydes, ainsi que certaines de leurs caractéristiques spécifiques, telles que la présence de relations d'orientation entre les nano-oxydes et la matrice FeCr, qui ont été observées même dans le cas de nano-oxydes de type corundum riches en Cr. Enfin, les résultats obtenus, combinées avec les données de la littérature, sont discutées pour une meilleure compréhension des mécanismes impliqués dans la formation des nano-oxydes dans les aciers ODS. / Oxide Dispersion Strengthened (ODS) steels, that is steels reinforced with a homogeneous distribution of (Y,Ti) oxide nano-particles, are advanced structural materials for nuclear applications. The oxide particles serve as point defect recombination centres and obstacles to dislocation motion thereby improving radiation resistance and high-temperature strength of these steels making them perfect candidate materials for future fusion and fission nuclear reactors. The conventional fabrication of ODS steels is achieved by mechanical alloying followed by thermomechanical heat treatments. This way of ODS steel production seems complicated to understand the physical mechanisms leading to the precipitation of nano-oxide particles. The kinetics of nanoparticle formation can be much better studied using an alternative technique of nanoparticle growth, namely Ion Beam Synthesis (IBS). This approach has many advantages including the precise control of experimental parameters and the ability to de-correlate various factors contributing to precipitation kinetics. A better knowledge gained in this way would be potentially helpful for optimization of ODS steel production routines. In the course of this PhD study, the IBS approach was applied to investigate the co-precipitation of metal (Y and/or Ti) and oxygen ions implanted into a model Fe-Cr alloy with the composition close to those typical for commercial ODS steels. Following the standard IBS schedule, consisting of ion implantation followed by high-temperature heat treatment, ions of Y, Ti and O at low energies were implanted into high-purity Fe10wt%Cr alloy samples at room temperature. The implanted samples were then annealed at various temperatures ranging from 600 to 1100°C to promote the precipitation of nano-oxide particles. A range of Transmission Electron Microscopy techniques were used to characterize the crystallographic structure and chemical composition of the nanoparticles. The study has been performed following three sets of experiments. First of all, the sequential implantation of Ti and O ions was implemented. Subsequent annealing at temperatures below 1000°C revealed that precipitation of titanium oxide was suppressed. Instead, chromium-rich nano-oxide particles with corundum hexagonal structure were found to precipitate. At sufficiently high temperatures these corundum particles were found to contain certain amount of Ti. Only after annealing at the highest temperature of 1100°C, particles of another type with Ti enriched core and Cr enriched shell were additionally fixed. Secondly, sequential Y and O ion implantation resulted in the formation of probable yttrium-rich oxides at 800°C. Annealing at 1100°C promoted their growth to larger sized yttria (Y₂O₃) particles with a Cr enriched shell. Finally, sequential ion implantation of both metal ions (Y and Ti) was performed, followed by O implantation. The order of metal ion implantation has been found to be crucial for subsequent oxide precipitation at the annealing stage. With the Ti implantation first in the sequence, the precipitation of corundum hexagonal chromium-rich oxide was observed, very similar to the case of Ti and O implantation. In contrast, implantation starting with Y produced yttrium-titanium oxide particles with unidentifiable structure. Summing up, the study has demonstrated the feasibility of the formation of Y, Ti and (Y,Ti) oxides by ion implantation. The thesis presents the detailed characterization of the nanoparticles, as well as the discovered specific features of precipitated particles, such as the presence of orientation relationships between the particles and the FeCr matrix, which was observed even for the case of Cr-rich corundum particles. Finally, the implications of the obtained results, in conjunction with the already known data from the existing literature, for the better understanding of the mechanisms involved in the formation of nano-oxide particles in ODS steels are discussed.