Made available in DSpace on 2016-12-23T14:08:11Z (GMT). No. of bitstreams: 1 Roberto Balarini Junior - Parte 1.pdf: 4732272 bytes, checksum: 0c0798e2e5b19f7834c4ce1d56156d8f (MD5) Previous issue date: 2013-11-27 / Este trabalho é uma investigação tribológica envolvendo o par cerâmico composto por esferas de nitreto de silício (Si3N4) deslizando contra discos de óxido de alumínio (Al2O3) em água. No total, dez ensaios foram conduzidos com a intenção de reproduzir o fenômeno de Ultra Baixo Coeficiente de Atrito (UBCA) em laboratório, o qual é caracterizado pela obtenção de valores de coeficiente de atrito (&#956;) da ordem dos milésimos (&#956; < 0,01) no regime estacionário. Uma vez alcançado os valores de UBCA, o objetivo principal deste trabalho foi o de investigar o período de running-in, através de uma série de análises em relação ao comportamento do coeficiente de atrito durante o regime transitório, incluindo correlações com algumas variáveis, como rugosidade superficial, erros de batimento axial, íons formados durante o deslizamento e desgaste das cerâmicas. Para isto, as curvas de coeficiente de atrito por tempo foram expandidas para intervalos de tempos pré-determinados e o comportamento de &#956; em cada um destes intervalos foi investigado e comparado entre os ensaios realizados, sendo que o caráter oscilatório do coeficiente de atrito foi inserido nas análises do período transitório. Em geral, foi comprovado que maiores valores de rugosidade superficial resultaram em maiores períodos de running-in e que existe uma tendência de aumento de desgaste com o aumento do tempo de transição. Para todos os ensaios, a taxa de desgaste das esferas de Si3N4 foi superior à dos discos de Al2O3. Em adição, através de comparações entre a medida da soma das rugosidades das superfícies desgastadas com a espessura mínima do filme lubrificante, este trabalho confirma a hipótese de que é necessário um regime de lubrificação misto (hidrodinâmico e limítrofe) para a obtenção do regime de UBCA, sendo que, para a eficácia do modo de lubrificação esperado, estima-se que é necessário concentrações de íons de silício (Si) superiores a 1,3 mg/l, aproximadamente. Esta quantidade de íons Si é supostamente a mínima necessária para a formação de uma camada de sílica adequada para conferir a parcela de lubrificação limítrofe necessária para a obtenção do regime de UBCA / This work is a tribological investigation involving the ceramic pair composed by balls of silicon nitride (Si3N4) sliding against disks of aluminum oxide (Al2O3) under water. A total of ten tests were conducted in order to reproduce the phenomenon of Ultra Low Friction Coefficient (ULFC) in laboratory, which is characterized by obtaining values of friction coefficient (&#956;) below of 0,01 in the steady state. Once reached these values, the main objective of this study was to investigate the running-in period by a series of analyses in relation to the behavior of the friction coefficient during the running-in period, including correlations with some variables such as surface roughness, axial parallelism errors, ions formed during the sliding and wear of samples. For this reason, the curves of friction coefficient versus time were expanded for some predetermined intervals and the behavior of &#956; for each one of these intervals was investigated and compared between themselves, and the oscillatory behavior of the friction coefficient was inserted into the analysis of the running-in period. In general, it was concluded that higher values of surface roughness resulted in longer periods of running-in and that there is a trend of increasing wear with increasing time of transition. For all tests, the wear rate of the silicon nitride balls was higher than alumina disks. In addition, by comparing the measure of the sum of the roughness of the worn surfaces with minimum thickness of the lubricant film, the present work confirms the hypothesis that it is necessary a mixed lubrication (hydrodynamic combined with boundary) to obtain the regime of ULFC and for effective lubrication expected mode it is estimated that is required an ions concentration of silicon (Si) higher than 1.3 mg/l approximately. This amount of ions Si is supposed to be the minimum necessary for the formation of a silica layer enable to confer the boundary lubrication participation for obtaining the ULFC

O objetivo deste trabalho, foi investigar o comportamento tribológico do par cerâmico alumina - nitreto de silício no deslizamento em água com pH controlado e em uma suspensão com diferentes concentrações de sílica coloidal em água, e verificar a possibilidade de atingir um coeficiente de atrito da ordem de milésimos (&#956; < 0,01), aqui chamado de ultra baixo coeficiente de atrito (UBCA) e verificar se a mudança do pH do meio, ou a alteração da concentração de sílica na água, diminui o runningin, tempo necessário para o sistema entrar em regime estacionário, do coeficiente de atrito. Os ensaios foram realizados na configuração de ensaio tribológico esfera contra disco, no qual a esfera foi de nitreto de silício e o disco de alumina, sob carga normal de 54 N e velocidade de deslizamento de 1 m/s. A água utilizada nos ensaios foi destilada e deionizada, e a sílica coloidal amorfa, sem porosidade e de tamanho médio de partícula de 12 nanômetros foi a Aerosil® 200. A esfera de nitreto de silício, adquirida comercialmente, e o disco de alumina, foi proveniente de trabalhos anteriores. Todos os materiais foram caracterizados quanto a densidade. Algumas propriedades mecânicas como dureza, módulo de elasticidade e tenacidade à fratura foram determinadas. Nos ensaios lubrificados com água onde o pH foi controlado, o sistema atingiu o regime com valores de coeficiente de atrito da ordem de milésimos, exceto quando o pH da água era muito baixo ou muito alto. Em hidrossol o coeficiente de atrito chegou a unidades de milésimos, mas quando se aumenta a concentração de sílica coloidal, também, aumenta o desgaste nas superfícies. O disco de alumina sempre apresentou menor desgaste do que a esfera de nitreto de silício, em todas as condições estudadas. / The objective of this work was to investigate the tribological behavior of the ceramic pair alumina-silicon nitride, sliding on the water with controlled pH and in a suspension with different concentrations of colloidal silica in water, and verify the possibility of achieving a friction coefficient in the order of thousandths (&#956; < 0.01), here called ultra low friction coefficient (ULFC) and verify if the change of pH or changing the concentration of silica in the water, decreases the running-in, time required for the system reach the steady state of friction coefficient. The tests were conducted in a pin on disc setup in which the ball was made on silicon nitride and the disc of alumina, under normal load of 54 N and a sliding velocity of 1 m/s. The water used in the experiments was distilled and deionized. The amorphous silica, without porosity and average particle size of 12 nanometers was Aerosil ® 200. The ball of silicon nitride, was purchased commercially, and the alumina disk was recycled from previous works, all materials were characterized by density. Some mechanical properties such as hardness, elastic modulus and fracture toughness were determined. In tests with controlled pH water the system has reached the friction coefficient of the order of thousandths, except when the pH of the water was too low or too high. In hydrossol the friction coefficient reached units of thousandths, but when increasing the concentration of colloidal silica also increases the wear in the surfaces. The alumina disc always showed less wear than the ball of silicon nitride, in all conditions studied.

Le phénomène de précession cohérente de l'aimantation dans l'hélium 3 superfluide a été découvert en 1984. Il se caractérise par la précession libre de l'aimantation du superfluide sur des échelles de temps très longues (dans certains cas, des heures). Ce phénomène est une signature de la superfluidité de spin, l'analogue magnétique de la supraconductivité ou de la superfluidité. La superfluidité de spin peut se décrire en termes de condensation de Bose-Einstein des excitations magnétiques du superfluide : les magnons. Ce formalisme permet de déterminer simplement les conditions dans lesquelles une telle condensation peut apparaître dans les différentes phases de l'hélium 3 superfluide. Ce travail présente comment l'utilisation d'aérogel anisotrope nous a permis de manipuler le paramètre d'ordre du superfluide et d'obtenir ainsi de nouvelles phases dans lesquelles la condensation de Bose-Einstein des magnons peut être observée. Nous avons ainsi étudié expérimentalement la précession cohérente de l'aimantation dans ces nouvelles phases. Nous avons également étudié l'influence de l'aérogel sur la transition de phase superfluide. Enfin, nous détaillons comment il est possible d'obtenir la précession cohérente de l'aimantation sur les différents niveaux d'un puits de potentiel pour les magnons. / The phenomenon of coherent precession of magnetization in superfluid helium 3 was discovered in 1984. It is characterized by the free precession of the magnetization of the superfluid on very long timescales (up to hours). This phenomenon is a signature of spin superfluidity, the magnetic analogue of superconductivity or superfluidity. Spin superfluidity can be described in terms of Bose-Einstein condensation the magnetic excitations of the superfluid: the magnons. This formalism makes it possible to determine easily the conditions in which such a condensation can appear in the different phases of superfluid helium 3. This work shows how the use of anisotropic aerogel permitted us to manipulate the order parameter of the superfluid and thus to obtain new phases in which the Bose-Einstein condensation of magnons can be observed. We were able to study experimentally the coherent precession of magnetization in these new phases. We also studied the influence of the aerogel on the superfluid transition. Finally, we detail how one can obtain the coherent precession of magnetization on different levels of a potential well for magnons.

L'amélioration des performances des circuits intégrés nécessite le développement de nouveaux matériaux comme, par exemple, les diélectriques à très faible permittivité, appelés Ultra Low-K (K<=2,5). Cette étude se focalise sur les matériaux a-SiOCH poreux déposés en couche mince par PECVD suivant une approche dite « porogène ». Cette approche consiste en le dépôt d'une matrice de type a-SiOCH contenant des inclusions organiques qui sont dégradées dans un second temps, grâce à l'utilisation d'un post-traitement, afin de créer la porosité. La première partie de cette étude montre que l'extension de l'approche porogène a permis d'élaborer des matériaux ayant des constantes diélectriques pouvant atteindre 2,25 en utilisant un procédé industriel avec, comme type de post-traitement, un recuit thermique assisté par rayonnement UV. Certains matériaux ont été intégrés dans des démonstrateurs. Puis, dans un second temps, l'impact du procédé d'élaboration sur la structure chimique du matériau a été analysé afin de mieux comprendre son comportement mécanique. Enfin, la mise en place d'une technique de caractérisation a permis la mesure des différentes contributions de la constante diélectrique (électronique, ionique et dipolaire). L'évolution de ces composantes en fonction des paramètres d'élaboration a ainsi pu être étudiée.

Die Weiterentwicklung klassischer, elektronischer Identifikationstechnologien leistet einen wichtigen Beitrag zum technischen Fortschritt in Industrie, Logistik und Gesundheitswesen. Die vorliegende Dissertationsschrift beschreibt die Entwicklung eines Dual-Feed-Antennendesigns für passive UHF-RFID-Transponder auf kritischen Oberflächen. Die zu Grunde liegende Antennenstruktur besteht aus einem Microstrip-Patch unter Verwendung eines verlustarmen Substratmaterials. Dieser erfährt eine Optimierung hinsichtlich seiner Lesereichweite, insbesondere auf kritischen Oberflächen. Ein Zwei-Port-Konzept mit gekoppeltem Feed-Line-Anpassnetzwerk reduziert die Anzahl benötigter, diskreter Komponenten und ermöglicht eine kostengünstige Herstellung mittels klassischer Ätzverfahren. Verschiedene Ansätze zur Modellierung und zur analytischen Berechnung der Antennenparameter werden dargestellt. Des Weiteren erfolgt eine Verifikation der Antennenstruktur anhand eines Konzepts für einen passiven Energy-Harvesting-RFID-Transponder, der zur Temperaturüberwachung in den genannten Branchen eingesetzt werden kann. Dieses Konzept schließt ein effizientes Energiemanagement mittels eines Ultra-Low-Power-Mikrocontrollers sowie Ansätze zur Energiegewinnung und -speicherung mit ein und stellt die Wahl wichtiger Systemparameter und Bauelemente anhand anwendungsspezifischer Abschätzungen dar.

Wireless Sensor Networks have found diverse applications from health to agriculture and industry. They have a potential to profound social changes, however, there are also some challenges that have to be addressed. One of the problems is the limited power source available to energize a sensor node. Longevity of a node is tied to its low power design. One of the areas where great power savings could be made is in nodal communication. Different schemes have been proposed targeting low power communication and short network latency. One of them is the introduction of ultra-low power wake-up receiver for monitoring the channel. Although it is a recent proposal, there has been many works published. In this thesis work, the focus is study and comparison of architectures for a wake-up receiver. As part of this study, an envelope detector based wake-up receiver is designed in 130nm CMOS Technology. It has been implemented in schematic and layout levels. It operates in the 2.4GHz ISM band and consumes a power consumption of 69µA at 1.2V supply voltage. A sensitivity of -52dBm is simulated while receiving 100kb/s OOK modulated wake-up signals. / This is a master's thesis work by a communication electronics student in a German company called IMST GmbH.

In the present work, the plasma repair for damaged ultra-low-k (ULK) materials, newly developed at the Fraunhofer ENAS, is studied with density functional theory (DFT) and molecular dynamic (MD) methods to obtain new insights into this repair mechanism. The ULK materials owe their low dielectric constant (k-value) to the insertion of k-value lowering methyl groups. During the manufacturing process, the ULK materials are damaged and their k-values increase due to the adsorbtion of hydroxyl groups (OH-damage) and hydrogen atoms (H-damage) that replaced themethyl groups. The first investigation point is the creation of repair fragments. For this purpose the silylation molecules bis(dimethylamino)-dimethylsilane (DMADMS) and octamethylcyclotetrasiloxane (OMCTS) are fragmented. Here, only fragmentation reactions that lead to repair fragments that contain one silicon atom and at least one methyl group were considered. It is shown that the repair fragments that contain three methyl groups are preferred, especially in a methyl rich atmosphere. The effectivity of the obtained repair fragments to cure an OH- and H-damage are investigated with two model systems. The first system consists of an assortment of small ULK-fragments, which is used to scan through the wide array of possible repair reactions. The second system is a silicon oxide cluster that investigates whether the presence of a cluster influences the reaction energies. In both model systems, repair fragments that contain three methyl groups or two oxygen atoms are found to be most effective. Finally, the quantum chemical results are compared to experimental findings to get deeper insight into the repair process.

Um monitor de tensão de limiar (VT0) é um circuito que, idealmente, entrega o valor do VT0 como uma tensão na saída, para uma determinada faixa de temperatura, sem a necessidade de polarização externa, configurações paramétricas, ajuste de curvas ou qualquer cálculo subsequente. Estes circuitos podem ser usados em sensores de temperatura, referências de tensão e corrente, dosímetros de radiação e outras aplicações, uma vez que a dependência do VT0 nas condições de operação é um aspecto bem modelado. Além disso, estes circuitos podem ser utilizados para monitoramento de processos de fabricação e para compensação da variabilidade do processo, uma vez que o VT0 é um parâmetro chave para o comportamento do transistor e sua modelagem. Nesta tese, são apresentadas três novas topologias de circuitos, duas são monitores de VT0 NMOS e a terceira é um monitor de VT0 PMOS. As três estruturas são topologias de circuito auto-polarizadas que não utilizam resistências, e apresentam alta rejeição a variações na alimentação, baixa sensibilidade de Linea, e permitem a extração direta da tensão de limiar para grandes intervalos de temperatura e de tensão de alimentação, com pequeno erro. Sua metodologia de projeto é baseada no modelo unificado controlado por corrente (UICM), um modelo MOSFET que é contínuo, desde o nível de inversão fraca a forte e para as regiões de operação de triodo e saturação. Os circuitos ocupam uma pequena área de silício, consomem apenas dezenas de nanowatts, e podem ser implementados em qualquer processo padrão CMOS digital, uma vez que só utilizam transistores MOS (não precisa de nenhum resistor). Os monitores de VT0 são utilizados em diferentes aplicações, a fim de investigar a sua funcionalidade e comportamento como parte de um sistema. As aplicações variam de uma tensão de referência, que apresenta um desempenho comparável ao estado da arte, para uma configuração que permite obter uma menor variabilidade com processo na saída de um circuito auto-polarizado que gera um tensão CTAT. Além disso, explorando a capacidade de funcionar como um gerador de corrente específica (ISQ) que os monitores de VT0 aqui apresentados oferecem, introduz-se um novo circuito auto-polarizado que gera um tensão CTAT, que é menos sensível a variações de processo, e pode ser usado em referências de tensão band-gap. / A threshold voltage (VT0) monitor is a circuit that ideally delivers the estimated VT0 value as a voltage at its output, for a given temperature range, without external biases, parametric setups, curve fitting or any subsequent calculation. It can be used in temperature sensors, voltage and current references, radiation dosimeters and other applications since the MOSFET VT0 dependence on the operation conditions is a very well modeled aspect. Also, it can be used for fabrication process monitoring and process variability compensation, since VT0 is a key parameter for the transistor behavior and modeling. In this thesis, we present three novel circuit topologies, two of them being NMOS VT0 monitors and the last one being a PMOS VT0 monitor. The three structures are resistorless self-biased circuit topologies that present high power supply rejection, low line sensitivity, and allow the direct extraction of the threshold voltage for wide temperature and power supply voltage ranges, with small error. Its design methodology is based on the Unified Current Control Model (UICM), a MOSFET model that is continuous from weak to strong inversion and from triode to saturation regions. The circuits occupy small silicon area, consume just tens of nanoWatts, and can be implemented in any standard digital CMOS process, since they only use MOS transistors (does not need any resistor). The VT0 monitors are used in different applications in order to prove their functionality, and behavior as part of a system. The applications vary from a reference voltage, that presents performance comparable with state-of-the-art works, to a configuration that allows to obtain a lower process variability, in the output of a self-biased circuit that generates a complementary to the absolute temperature (CTAT) voltage. In addition, exploiting the ability to operate as an specific current (ISQ) generator, that the VT0 monitors presented here offer, we introduced a new self-biased circuit that produces a CTAT voltage and is less sensitive to process variations, and can be used in band-gap voltage references.

Ce travail de thèse s’inscrit dans la grande problématique de la récupération d’énergie. Il s’agit plus précisément de convertir de petites quantités d’énergie cinétique présentes dans un écoulement d’air en énergie électrique par l’intermédiaire d’un convertisseur électrostatique. L’énergie électrique convertie est ensuite destinée à alimenter des capteurs autonomes communicants pour le monitoring de structures, le suivi environnemental, le monitoring de santé…Le manuscrit comprend une étude des travaux antérieurs en récupération d’énergie des écoulements d’air, la compréhension physique des phénomènes de conversion électrostatique, de mécanique des fluides et d’aérodynamique à très faibles nombres de Reynolds, ainsi qu’une description des prototypes développés et des résultats expérimentaux obtenus.Les récupérateurs que nous avons développés se divisent en deux grandes catégories : (i) les récupérateurs rotatifs qui transforment l’énergie cinétique de l’air en énergie mécanique de rotation et (ii) les récupérateurs aéroélastiques qui puisent l’énergie cinétique du vent pour produire de l’énergie mécanique par oscillations périodiques. Ces deux types de récupérateurs ont été associés à des convertisseurs électrostatiques dédiés, polarisés par l’ajout d’électrets ou auto-polarisés par triboélectricité. Les récupérateurs d'énergie ont été optimisés et nous avons notamment montré l'intérêt de la conversion électrostatique pour des dispositifs de petites dimensions (quelques cm²) fonctionnant à faible vitesse (<3m/s). Les densités surfaciques de puissance atteignent 5µW/cm2@1m/s pour les récupérateurs rotatifs et de l'ordre de 10µW/cm2@10m/s pour les récupérateurs aéroélastiques. Les micro-générateurs ont finalement été combinés à des circuits de gestion d'énergie pour alimenter des capteurs autonomes communicants, validant la chaine complète de récupération d'énergie, montrant par la même occasion l'intérêt des circuits de gestion d'énergie actifs de type SECE (synchronous electric charge extraction) ou MPP (maximum power point). / This work is enshrined in the energy harvesting context. More specifically, the purpose is to convert small amounts of kinetic energy from airflows into electrical energy through an electrostatic converter. The electrical energy produced is then intended to supply low power sensors for structural health monitoring, environmental follow-up, human monitoring…The manuscript includes an overview of the state of the art on airflow energy harvesting, the physical understanding of electrostatic conversion phenomena, fluid mechanics, ultra-low Reynolds number aerodynamics, a description of the prototypes developed and the results obtained.The harvesters we have developed are divided into two families: (i) the rotational harvesters which transform the kinetic energy of airflows into mechanical energy of rotation and (ii) the aeroelastic harvesters which use wind energy to produce mechanical energy of periodical oscillations. These two types of harvesters have been associated to different electrostatic converters, polarized by the addition of electrets or self-polarized by triboelectricity. The energy harvesters have been optimized and we have demonstrated the benefit of the electrostatic conversion for small devices (a few cm2) operating at low speeds (<3m/s). The power densities reach 5µW/cm2@1m/s for rotational devices and in the range of 10µW/cm2@10m/s for aeroelastic devices. The micro-generators were finally combined with power management circuits to supply autonomous and communicating sensors. This last stage completes the energy harvesting chain and also shows the high benefit of active circuits (synchronous electric charge extraction, maximum power point).

Backscatter communication enables wireless communication at a power consumption orders of magnitude lower than conventional wireless communication. Instead of generating new RF-signals backscatter communication leverages ambient signals, such as WiFi-, Bluetooth- or TV-signals, and reflects them by changing the impedance of the antenna. Backscatter communication is known as a short-range communication technique achieving ranges in the order of meters. To improve the communication range, we explore the use of a tunnel diode as an amplifier of the backscattered RF-signal. We developed the amplifier on a PCB-board together with a matching network tuned to give maximum gain at 868 MHz. Our work demonstrates that the 1N3712 tunnel diode can achieve gains up to 35 dB compared to a tag without amplification while having a peak power consumption of 48 μW. With this amplifier the communication distance can be increased by up to two orders of magnitude.