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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
521

Synthese und Charakterisierung von phosphoreszenten Terpolymeren und nichtkonjugierten Matrixpolymeren für effiziente polymere Leuchtdioden / Synthesis and characterization of phosphoreszent terpolymers and nonconjugated matrixpolymers for efficient polymer light emitting diodes

Thesen, Manuel Wolfram January 2010 (has links)
Mit Seitenkettenpolystyrenen wurde ein neues Synthesekonzept für phosphoreszente polymere LED-Materialien aufgestellt und experimentell verifiziert. Zunächst erfolgten auf Grundlage strukturell einfacher Verbindungen Untersuchungen zum Einfluss von Spacern zwischen aktiven Seitengruppen und dem Polystyrenrückgrat. Es wurden Synthesemethoden für die Monomere etabliert, durch die aktive Elemente - Elektronen- und Lochleiter - mit und ohne diesen Spacer zugänglich sind. Durch Kombination dieser Monomere waren unter Hinzunahme von polymerisierbaren Iridium-Komplexen in unterschiedlicher Emissionswellenlänge statistische Terpolymere darstellbar. Es wurde gezeigt, dass die Realisierung bestimmter Verhältnisse zwischen Loch-, Elektronenleiter und Triplettemitter in ausreichender Molmasse möglich ist. Die Glasstufen der Polymere zeigten eine deutliche Strukturabhängigkeit. Auf die Lage der Grenzorbitale übten die Spacer nahezu keinen Einfluss aus. Die unterschiedlichen Makromoleküle kamen in polymeren Licht emittierenden Dioden (PLEDs) zum Einsatz, wobei ein deutlicher Einfluss der Spacereinheiten auf die Leistungscharakteristik der PLEDs festzustellen war: Sowohl Effizienz, Leuchtdichte wie auch Stromdichte waren durch den Einsatz der kompakten Makromoleküle ohne Spacer deutlich höher. Diese Beobachtungen begründeten sich hauptsächlich in der Verwendung der aliphatischen Spacer, die den Anteil im Polymer erhöhten, der keine Konjugation und damit elektrisch isolierende Eigenschaften besaß. Diese Schlussfolgerungen waren mit allen drei realisierten Emissionsfarben grün, rot und blau verifizierbar. Die besten Messergebnisse erzielte eine PLED aus einem grün emittierenden und spacerlosen Terpolymer mit einer Stromeffizienz von etwa 28 cd A-1 (bei 6 V) und einer Leuchtdichte von 3200 cd m-2 (bei 8 V). Ausgehend von obigen Ergebnissen konnten neue Matrixmaterialien aus dem Bereich verdampfbarer Moleküle geringer Molmasse in das Polystyrenseitenkettenkonzept integriert werden. Es wurden Strukturvariationen sowohl von loch- wie auch von elektronenleitenden Verbindungen als Homopolymere dargestellt und als molekular dotierte Systeme in PLEDs untersucht. Sieben verschiedene lochleitende Polymere mit Triarylamin-Grundkörper und drei elektronendefizitäre Polymere auf der Basis von Phenylbenzimidazol konnten erfolgreich in den Polymeransatz integriert werden. Spektroskopische und elektrochemische Untersuchungen zeigten kaum eine Veränderung der Charakteristika zwischen verdampfbaren Molekülen und den dargestellten Makromolekülen. Diese ladungstransportierenden Makro-moleküle wurden als polymere Matrizes molekular dotiert und lösungsbasiert zu Einschicht-PLEDs verarbeitet. Als aussichtsreichstes Lochleiterpolymer dieser Reihe, mit einer Strom-effizenz von etwa 33 cd A-1 (bei 8 V) und einer Leuchtdichte von 6700 cd m-2 (bei 10 V), stellte sich ein Triarylaminderivat mit Carbazolsubstituenten heraus. Als geeignetstes Matrixmaterial für die Elektronenleitung wurde ein meta-verknüpftes Di-Phenylbenzimidazol ausfindig gemacht, das in der PLED eine Stromeffizienz von etwa 20 cd A-1 (bei 8 V) und eine Leuchtdichte von 7100 cd m-2 (bei 10 V) erzielte. Anschließend wurden die geeignetsten Monomere zu Copolymeren kombiniert: Die lochleitende Einheit bildete ein carbazolylsubstituiertes Triarylamin und die elektronen-leitende Einheit war ein disubstituiertes Phenylbenzimidazol. Dieses Copolymer diente im Folgenden dazu, PLEDs zu realisieren und die Leistungsdaten mit denen eines Homopolymer-blends zu vergleichen, wobei der Blend die bessere Leistungscharakteristik zeigte. Mit dem Homopolymerblend waren Bauteileffizienzen von annähernd 30 cd A-1 (bei 10 V) und Leuchtdichten von 6800 cd m-2 neben einer Verringerung der Einsatzspannung realisierbar. Für die abschließende Darstellung bipolarer Blockcopolymere wurde auf die Nitroxid-vermittelte Polymerisation zurückgegriffen. Mit dieser Technik waren kontrollierte radikalische Polymersiationen mit ausgewählten Monomeren in unterschiedlichen Block-längen durchführbar. Diese Blockcopolymere kamen als molekular dotierte Matrizes in phosphoreszenten grün emittierenden PLEDs zum Einsatz. Die Bauteile wurden sowohl mit statistischen Copolymeren, wie auch mit Homopolymerblends in gleicher Zusammensetzung aber unterschiedlichem Polymerisationsgrad hinsichtlich der Leistungscharakteristik verglichen. Kernaussage dieser Untersuchungen ist, dass hochmolekulare Systeme eine bessere Leistungscharakteristik aufweisen als niedermolekulare Matrizes. Über Rasterkraft-mikroskopie konnte eine Phasenseparation in einem Größenbereich von etwa 10 nm für den hochmolekularen Homopolymerblend nachgewiesen werden. Für die Blockcopolymere war es nicht möglich eine Phasenseparation zu beobachten, was vorwiegend auf deren zu geringe Blocklänge zurückgeführt wurde. / A new synthetic approach for the synthesis of side chain polystyrenes was established and their use as phosphorescent polymers for polymer light emitting diodes (PLEDs) is shown by experiments. An assay was introduced to clarify influences on electroluminescent behavior for RGB-colored phosphorescent terpolymers with N,N-Di-p-tolyl-aniline as hole-transporting unit, 2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (tert-BuPBD) as electron-transporting unit, and different iridium complexes in RGB-colors as triplet emitting materials. All monomers were attached with spacer moieties to the “para” position of a polystyrene. PLEDs were built to study the electro-optical behavior of these materials. The gist was a remarkable influence of hexyl-spacer units to the PLED performance. For all three colors only very restricted PLED performances were found. In comparison RGB-terpolymers were synthesized with directly attached charge transport materials to the polymer backbone. For this directly linked systems efficiencies were 28 cd A−1 @ 6 V (green), 4.9 cd A−1 @ 5 V (red) and 4.3 cd A−1 @ 6 V (bluish). In summary it is assumed that an improved charge percolation pathways regarding to the higher content of semiconducting molecules and an improved charge transfer to the phosphorescent dopand in the case of the copolymers without spacers are responsible for the better device performance comparing the copolymers with hexyl spacers. It was found that the approach of the directly connected charge transport materials at the nonconjugated styrene polymer backbone is favored for further investigations as shown in the following. A series of styrene derived monomers with triphenylamine-based units, and their polymers have been synthesized and compared with the well-known structure of polymer of N,N′-bis(3-methylphenyl)-N,N′-diphenylbenzidine with respect to their hole-transporting behavior in PLEDs. A vinyltriphenylamine structure was selected as a basic unit, functionalized at the para positions with the following side groups: diphenylamine, 3-methylphenyl-aniline, 1- and 2-naphthylamine, carbazole, and phenothiazine. The polymers are used in PLEDs as host polymers for blend systems. It is demonstrated that two polymers are excellent hole-transporting matrix materials for these blend systems because of their good overall electroluminescent performances and their comparatively high glass transition temperatures. For the carbazole-substituted polymer (Tg = 246 °C), a luminous efficiency of 35 cd A−1 and a brightness of 6700 cd m−2 at 10 V is accessible. The phenothiazine-functionalized polymer (Tg = 220 °C) shows nearly the same outstanding PLED behavior. Hence, both these polymers outperform the well-known polymer of N,N′-bis(3-methylphenyl)-N,N′-diphenylbenzidine, showing only a luminous efficiency of 7.9 cd A−1 and a brightness of 2500 cd m−2 (10 V). Furthermore, novel styrene functionalized monomers with phenylbenzo[d]imidazole units and the corresponding homopolymers are prepared. The macromolecules are used as matrices for phosphorescent dopants to prepare PLEDs. The devices exhibit current efficiencies up to 38.5 cd A−1 at 100 cd m−2 and maximum luminances of 7400 cd m−2 at 10 V. Afterwards the most efficient monomers of this investigations were combined and statistical copolymers were synthesized. As hole-transporting monomer the carbazole substituted triarylamine and as electron-transporting monomer a disubstituted phenylbenzoimidazole was selected. This statistical copolymer was used in the following as matrix material for phosporescent PLEDs and the device performance was compared with a matrix system of a polymer blend matrix system of corresponding homopolymers. With this homopolymer blend efficiencies of about 30 cd A-1 at 10 V and luminances of 6800 cd m-2 beside a decreased onset voltage were realized. Finally bipolar blockcopolymers of structural basic monomers were synthesized via nitroxide mediated polymerization. With these technique and the chosen hole- and electron-transporting monomers a controlled radical polymerization was realized leading to blockcopolymers in different block lengths. These blockcopolymers were used as molecular doped matrix systems in green phosphoreszent PLEDs. The devices were compared in regard to their performances with PLEDs made of statistical copolymers and homopolymer blends. It was found that high molecular systems show a better device performance compared to low molecular polymer matrices. With atomic force microscopy it is shown that a phase separation takes place for the high molecular blend of homopolymers. For the synthesized blockcopolymers no phase separation could be verified, mainly because of the comparatively low molecular weight of these systems.
522

Studies of Materials and Interfaces for Organic Electronics

Braun, Slawomir January 2007 (has links)
Organic electronics is a rapidly evolving field with vast number of applications having high potential for commercial success. Although a great progress has been made, many organic electronic applications: organic light-emitting diodes (OLEDs), organic fieldeffect transistors (OFETs), organic solar cells, etc; still require further optimization to fulfill the requirements for successful commercialization. For many applications, available at this time organic materials do not provide satisfactory performance and stability, which hinders the possibility of a large-scale production. Therefore, the key ingredient needed for a successful improvement in performance and stability of organic electronic devices is in-depth knowledge of physical and chemical properties of molecular and polymeric materials. Since many applications encompass several thin film layers made of organics, and often also inorganic materials, the understanding of both organic-organic and hybrid interfaces is yet another important issue necessary for the successful development of organic electronics. The research presented in this thesis is based mainly on photoelectron spectroscopy, which is an experimental technique especially suited to study both surfaces and interfaces of materials. In the thesis, the properties of one of the most successful polymeric materials, poly(3,4-ethylenedioxythiophene), often abbreviated as PEDOT, have been extensively studied. The research was done in close cooperation with an industrial partner – AGFA Gevaert, Belgium. The study was focused on the exploration of the intrinsic properties of the material, such as stability, morphology and conductivity. In addition, however, a possibility of alternation of these properties was also explored. This thesis reports also about investigations of the properties of various organic-organic and hybrid interfaces. The energy level alignment at such interfaces plays important role in charge injection and performance of the thin film organic-based devices. The conditions for different energy level alignment regimes at the various interfaces have been studied. The studies on interfaces were performed in close collaboration with the R&D division of DuPont Corporation, USA. This work led to the significant advances in understanding of the interface energetics and properties of industryrelevant organic materials, as represented not only by published scientific papers, but also patent applications.
523

none

Lin, Ming-Hsien 13 August 2007 (has links)
Abstract That greenhouse gas (GHG) emission causes ¡§Global Warming¡¨ is a human common problem today in the earth. The GHG emission will gradually promote our weather temperature and change which we must pay for a lot. For example, the warming temperature will dissolve icebergs, that it will elevate the sea level. Also, our land area will decrease. If climate zones were shifted, it would be possible to initiate some animals migrate. In the worse case, our living space will be squeezed and some special diseases will be spread out¡Ketc. In view of environmental protection awareness in every country, we must face the problem and crisis which comes from ¡§Global Warming¡¨ and ¡§Heating Pollution¡¨. In June of 1992, there was a meeting in Rio of Brazil. All representatives who comes from 153 different countries sign an agreement ¡V the United Nations Framework Convention on Climate Change (UNFCCC). They try to stabilize greenhouse gas concentrations at a level that would prevent dangerous interference with the climate and environmental system. To achieve this goal, the Kyoto Protocol was adopted on COP3 in December 1997 to place legally binding limits on GHG emissions. This Protocol norms 38 countries and European Union. In June 2007, the Group of Eight (G8) have reached a consensus and expect in year 2050, CO2 emissions can be reduced to the half of current emissions. We can see that, every country is vigorous to look for alternative energy that eliminates the environment destroyed and saves the earth resources. For example, Solar Energy, Water Energy, Wind Energy, Biomass Energy, Ocean Energy and Geothermal Energy¡Ketc. Those are gradually developed and applied in our daily life. My research is focus on the LED applications based on the substitution of traditional lighting. Actually, LED has all advantage of the energy saving, eco-lighting and economy of scale. How to use this alternative lighting is of great urgency and the major topic in light source manufacturers. For example, if America can replace their 55% white heat bulbs and 55% fluorescent lamps by LED before 2010, they can save 35 billion US dollars every year. For Japan, if they replace 100% white heat bulbs, they can save one to two of Nuclear Power Plants. Also, they can save above 100 million of gasoline every year. As to Taiwan official estimation, we can save 11 billion electricity degrees every year when we replace 25% white heat bulbs and 100% fluorescent lamps. That electric power is approximate to save one Nuclear Power Plant and 50 million of gasoline every year. According to the data above, the population of LED will give us a lot of eco-benefits. My report leans on researching and treating LED. Then, I take one step ahead to demonstrate how important it is to apply LED on our human light source and the effects of earth environment. Keywords: Greenhouse Gas (GHG) Global Warming United Nations Framework Convention on Climate Change (UNFCCC) Kyoto Protocol Biomass Energy LED - Light Emitting Diode (display)
524

Growth and characterization of III-nitride materials for high efficiency optoelectronic devices by metalorganic chemical vapor deposition

Choi, Suk 18 December 2012 (has links)
Efficiency droop is a critical issue for the Group III-nitride based light-emitting diodes (LEDs) to be competitive in the general lighting application. Carrier spill-over have been suggested as an origin of the efficiency droop, and an InAlN electron-blocking layer (EBL) is suggested as a replacement of the conventional AlGaN EBL for improved performance of LED. Optimum growth condition of InAlN layer was developed, and high quality InAlN layer was grown by using metalorganic chemical vapor deposition (MOCVD). A LED structure employing an InAlN EBL was grown and its efficiency droop performance was compared with a LED with an AlGaN EBL. Characterization results suggested that the InAlN EBL delivers more effective electron blocking over AlGaN EBL. Hole-injection performance of the InAlN EBL was examined by growing and testing a series of LEDs with different InAlN EBL thickness. Analysis results by using extended quantum efficiency model shows that further improvement in the performance of LED requires better hole-injection performance of the InAlN EBL. Advanced EBL structures such as strain-engineered InAlN EBL and compositionally-graded InAlN EBLs for the delivery of higher hole-injection efficiency were also grown and tested.
525

Alternating current electroluminescence (AC-EL) with organic light emitting material

Perumal, Ajay Kumar 09 July 2012 (has links) (PDF)
We demonstrate a new approach for fabricating alternating current driven organic electroluminescent devices using the concept of doping in organic semiconductors. Doped charge transport layers are used for generation of charge carriers within the device, hence eliminating the need for injecting charge carriers from external electrodes. The device is an organic-inorganic hybrid: We exploit the mechanical strength and chemical stability of inorganic semiconductors and combine it with better optical properties of organic materials whose emission color can be chemically tuned so that it covers the entire visible spectrum. The device consists of an organic electroluminescence (EL) layer composed of unipolar/ambipolar charge transport materials doped with organic dyes (10 wt% ) as well as molecularly doped charge generation layers enclosed between a pair of transparent insulating metal oxide layers. A transparent indium doped tin oxide (ITO) layer acts as bottom electrode for light outcoupling and Aluminium (Al) as top reflective electrode. The electrodes are for applying field across the device and to charge the device, instead of injection of charge carriers in case of direct current (DC) devices. Bright luminance of up to 5000 cd m-2 is observed when the device is driven with an alternating current (AC) bias. The luminance observed is attributed to charge carrier generation and recombination, leading to formation of excitons within the device, without injection of charge carriers through external electrodes.
526

Optoelectronic device simulation: Optical modeling for semiconductor optical amplifiers and Solid state lighting

Wang, Dongxue Michael 11 April 2006 (has links)
This dissertation includes two parallel topics: optical modeling of wavelength converters based on semiconductor optical amplifiers (SOA) and optical modeling for LEDs and solid state lighting. A steady-state numerical model of wavelength converters based on cross-gain SOAs is developed. In this model, a new model of the gain coefficient is applied. Each physical variable, such as the carrier density, gain coefficient, differential gain, and internal loss, spatially varies across the SOA cavity and is numerically calculated throughout the device. Increased accuracy over previous studies is achieved by including such spatial variations. This model predicts wavelength-dependent characteristics of a wavelength converter of the SOA in both large and small signal regimes. Some key performance factors of SOA wavelength converters. A hybrid method incorporating both guided wave optics and optical ray tracing is also developed to model LEDs and solid state lighting. This method can model either single wavelength or dual-wavelength LED structures with different die shapes and packages. The waveguide and diffraction optics are mainly used to model the near-field optics inside LED chips and its vicinity and to identify guided modes and leakage modes. Geometrical ray tracing is applied to model the far-field pattern and light interactions at different material interfaces, such as LED chip structures, LED package materials, and light scattering at those rough surfaces and textures. To improve LED light extraction efficiency, different LED die shapes and device structures can also be optimized using this method. New technologies for future research on SOAs and LEDs are also proposed.
527

Driver Circuit for White LED Lamps with TRIAC Dimming Control

Weng, Szu-Jung 25 July 2012 (has links)
An efficient Light Emitting Diode (LED) lamp driver circuit is proposed for retrofitting the conventionally used incandescent lamps with existing TRIAC dimmer. The dimming feature in a wide range of firing angle from 30¢X to 130¢X can be accomplished by means of double pulse-width modulation (DPWM) and analog current regulation. The LED lamp driver adopts a flyback converter with an auxiliary active power MOSFET for synchronous switch and an associated inductor for zero voltage switching (ZVS), leading to lower switching loss and thus achieving a higher circuit efficiency. In the thesis, the mode operation of the driver circuit is analyzed and the design equations are derived accordingly. A laboratory circuit is designed for an 50 W LED lamp which is composed of 45 high-brightness white LEDs in series. Experiments are carried out to test the circuit performances with two dimming schemes. The experimental results indicate that the driver can achieve a circuit efficiency of 95 % at the rated output. When the LED lamp is dimmed, the circuit efficiency with DPWM is higher than that with the analog current regulation. On the other hand, the LED lamp dimmed by analog current regulation has a higher efficiency but a less color shift by DPWM.
528

Lichtauskopplung aus LEDs mittels Metallnanoteilchen

Göhler, Tino 01 February 2011 (has links) (PDF)
Der externe Wirkungsquerschnitt von auf AlGaAs/InGaAlP basierenden Leuchtdioden (LEDs) ist auf Grund von Totalreflexion infolge des hohen Brechungsindex des Halbleitermaterials (n=3...4) beschränkt. Auf die Oberfläche der LED aufgebrachte metallische Nanoteilchen (MNT) können jedoch als Dipolstreuer genutzt werden, um so die Emission der LED zu vergrößern. In dieser Arbeit wurden zunächst einzelne Goldnanoteilchen verschiedener Größe auf einer solchen Leuchtdiode in zwei verschiedenen Der externe Wirkungsquerschnitt von auf AlGaAs/InGaAlP basierenden Leuchtdioden (LEDs) ist auf Grund von Totalreflexion infolge des hohen Brechungsindex des Halbleitermaterials (n=3...4) beschränkt. Auf die Oberfläche der LED aufgebrachte metallische Nanoteilchen (MNT) können jedoch als Dipolstreuer genutzt werden, um so die Emission der LED zu vergrößern. In dieser Arbeit wurden zunächst einzelne Goldnanoteilchen verschiedener Größe auf einer solchen Leuchtdiode in zwei verschiedenen Umgebungsmedien untersucht. Dabei zeigt sich eine deutliche Verstärkung der Emission, falls die Dipolresonanz des MNT bei kürzeren Wellenlängen im Vergleich zur LED-Emission liegt. Für den Fall, dass die Dipolresonanz mit der Emission überlappt oder bei größeren Wellenlängen liegt, kommt es zu einer Abschwächung. Numerische Berechnungen zeigen, dass dabei die Stärke der Quadrupolmode, welche zusätzliche Absorption hervorruft, sowie eine Rotverschiebung der Dipolresonanz bei Anregung oberhalb des kritischen Winkels der Totalreflexion eine entscheidende Rolle spielen. Mit Hilfe einer speziellen Maskentechnik, der Fischer-Pattern-Nanolithographie, können Arrays von MNT hergestellt und anschließend die MNT in Form und Größe manipuliert werden. Die zunächst dreieckige Form der Partikel führt zu einer Abschwächung der Emission, welche sich aber durch Umwandlung der MNT in Kugeln zu einer Emissionsverstärkung wendet. Dabei kann Licht, welches sonst im Substrat gefangen wäre, durch plasmonische Streuung ausgekoppelt werden. Eine Untersuchung ähnlicher Strukturen auf einem hochbrechenden, transparenten Substrat (GaP) zeigt, dass die Lage der plasmonischen Resonanzen stärker vom Abstand der Partikel abhängt, als gewöhnlich zu erwarten wäre. / The external quantum efficiency of light-emitting diodes (LEDs) based on AlGaAs/InGaAlP is limited by total internal reflection because of the high refractive index (typically between 3 and 4) of the semiconductor. Metal nanoparticles (MNP) deposited on the surface of the LED can be used as dipole scatterers in order to enhance the emission of the LED. In this thesis, first, single gold nanoparticles of various sizes deposited on such an LED were investigated. A clear enhancement is detected as long as the dipole plasmon resonance of the particle is at a shorter wavelength than the LED emission. If the plasmon resonance coincides with the LED emission or is at a larger wavelength, the enhancement turns into suppression. Numerical simulations indicate that this latter effect is mainly caused by the particle quadrupole resonance producing extra absorption. Arrays of MNPs can be produced by a special mask technique called \"Fischer pattern nanolithography\" and manipulated in shape and size by additional steps. Originally, the MNPs produced by this technique are triangular in shape and turn out to suppress the LED emission. After transformation of the particles to spheres, a clear enhancement was detected. Light that would otherwise remain trapped inside the substrate is coupled out by resonant plasmonic scattering. Investigations on analogous structures on a transparent high-index material (GaP) indicate a stronger coupling between the particles than expected on the basis of literature data.
529

Frequency-resolved spectroscopy of relaxation proceses in optoelectronic materials and devices / Relaksacijos vyksmų dažninė spektroskopija optoelektronikos medžiagose ir prietaisuose

Vitta, Pranciškus 22 October 2010 (has links)
The thesis is devoted to the frequency-resolved investigation of the relaxation processes in optoelectronic materials and devices. Conventional fluorescence decay time measurement technique in the frequency domain was adapted for the use with light-emitting diode (LED) excitation and signal registration by a lock-in amplifier. Inorganic phosphors synthesized by aqueous sol-gel combustion method for using as wavelength converters in white LEDs as well as advanced organic semiconducting materials were investigated by photoluminescence decay time and quantum yield measurement techniques. The photoluminescence decay time measurement technique with extremely low quasi-continuous UV LED excitation was applied for the carrier dynamics research in GaN epitaxial layers. The investigation under such a low excitation conditions revealed the contribution of donor-acceptor recombination in the yellow luminescence of GaN. The techniques for in-situ thermal characterization of encapsulated LEDs, including the measurements of phosphors converter temperature and heat relaxation time constants inside a LED, were developed and demonstrated for the investigation of commercial low- and high- power LEDs. / Disertacija yra skirta relaksacijos procesų, vykstančių optoelektronikos medžiagose ir prietaisuose, tyrimui dažninės skyros metodu. Įprastas fluorescencijos gesimo trukmės tyrimo metodas, veikiantis harmoniškai moduliuoto žadinimo režimu, buvo adaptuotas žadinimui puslaidininkiniais šviestukais ir signalų registravimui radijo dažnių faziniu detektoriumi. Neorganiniai vandeniniu zolių-gelių metodu susintetinti fosforai, skirti baltų puslaidininkinių šviestukų gamybai, ir modernios organinės optoelektronikos medžiagos buvo ištirtos fotoliuminescencijos gesimo dėsnio ir kvantinės išeigos matavimo metodikomis, siekiant nustatyti krūvininkų rekombinacijos savybes ir optimizuoti sintezės parametrus. Realizuotas GaN epitaksinių sluoksnių liuminescencijos kinetikos tyrimas labai žemo kvazitolydinio sužadinimo atveju patvirtino rekombinacijos per priemaišas svarbą šio tipo medžiagose. Buvo sukurtos naujos prekinių šviestukų šiluminių savybių in-situ tyrimo metodikos, veikiančios dažninės skyros režimu. Bangos ilgio keitiklių temperatūra baltuose šviestukuose ir šilumos relaksacijos konstantos įvairaus tipo šviestukų konstrukciniuose elementuose buvo išmatuotos esant vardiniam šviestukų veikimo režimui.
530

Relaksacijos vyksmų dažninė spektroskopija optoelektronikos medžiagose ir prietaisuose / Frequency-resolved spectroscopy of relaxation proceses in optoelectronic materials and devices

Vitta, Pranciškus 22 October 2010 (has links)
Disertacija yra skirta relaksacijos procesų, vykstančių optoelektronikos medžiagose ir prietaisuose, tyrimui dažninės skyros metodu. Įprastas fluorescencijos gesimo trukmės tyrimo metodas, veikiantis harmoniškai moduliuoto žadinimo režimu, buvo adaptuotas žadinimui puslaidininkiniais šviestukais ir signalų registravimui radijo dažnių faziniu detektoriumi. Neorganiniai vandeniniu zolių-gelių metodu susintetinti fosforai, skirti baltų puslaidininkinių šviestukų gamybai, ir modernios organinės optoelektronikos medžiagos buvo ištirtos fotoliuminescencijos gesimo dėsnio ir kvantinės išeigos matavimo metodikomis, siekiant nustatyti krūvininkų rekombinacijos savybes ir optimizuoti sintezės parametrus. Realizuotas GaN epitaksinių sluoksnių liuminescencijos kinetikos tyrimas labai žemo kvazitolydinio sužadinimo atveju patvirtino rekombinacijos per priemaišas svarbą šio tipo medžiagose. Buvo sukurtos naujos prekinių šviestukų šiluminių savybių in-situ tyrimo metodikos, veikiančios dažninės skyros režimu. Bangos ilgio keitiklių temperatūra baltuose šviestukuose ir šilumos relaksacijos konstantos įvairaus tipo šviestukų konstrukciniuose elementuose buvo išmatuotos esant vardiniam šviestukų veikimo režimui. / The thesis is devoted to the frequency-resolved investigation of the relaxation processes in optoelectronic materials and devices. Conventional fluorescence decay time measurement technique in the frequency domain was adapted for the use with light-emitting diode (LED) excitation and signal registration by a lock-in amplifier. Inorganic phosphors synthesized by aqueous sol-gel combustion method for using as wavelength converters in white LEDs as well as advanced organic semiconducting materials were investigated by photoluminescence decay time and quantum yield measurement techniques. The photoluminescence decay time measurement technique with extremely low quasi-continuous UV LED excitation was applied for the carrier dynamics research in GaN epitaxial layers. The investigation under such a low excitation conditions revealed the contribution of donor-acceptor recombination in the yellow luminescence of GaN. The techniques for in-situ thermal characterization of encapsulated LEDs, including the measurements of phosphors converter temperature and heat relaxation time constants inside a LED, were developed and demonstrated for the investigation of commercial low- and high- power LEDs.

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