This thesis concentrates on advancing the thermal atom layer deposition (ALD) of Sb2Te3 and related multilayered metal chalcogenide thin films. It involves depositing a sub-monolayer of the target compound during each ALD cycle through successive, separated, and self-limiting gas-solid reactions between typically two gaseous reactants. The low deposition temperatures facilitate the creation of unconventional combinations of multilayers in distinct thermodynamic regimes. The well-defined chemical reactions inherent in ALD processes yield layers with ideal stoichiometry, and subsequent heat treatment enhances crystallite size and interface quality. Various methodologies have been explored to manipulate the optical and electrical properties of these thin films, demonstrating the capacity to tune their electrical and thermal transport properties using ALD.:Abstract Table of Contents Acknowledgments 1. Introduction 2. Background and Motivation 2.1. Basic Features of ALD 2.2. ALD of Metal Chalcogenides 2.3. Functional Properties 2.3.1. Photoresponse Effect 2.3.2. Thermoelectric Effect 2.4. State-of-art in Sb2Te3 and Related Multilayers 3. Experimental Techniques 3.1. Thin Films and Devices Preparation 3.2. Transport Property Evaluation 4. Wafer-Scale Growth of Sb2Te3 for Photodetectors 4.1. Microstructure Characterization 4.2. Rectifying Behaviour 4.3. Photoresponse Behaviour 4.4. DFT Calculation 4.5. High Yield Integration 4.6. Conclusion 5. Sb2Te3 with Insulator SbOx Layer 5.1. Microstructure Characterization 5.2. Sb2Te3 with Single-cycle of SbOx 5.3. Sb2Te3 with Multi-cycles of SbOx 5.4. Comparison of TE Performance 5.5. Conclusion 6. Sb2Te3 with Semiconductor Sb2Se3 Layer 6.1. Microstructure Characterization 6.2. Transport Properties 6.3. Thermal Conductivity and zT Values 6.4. Conclusion 7. Conclusion and Outlook Appendix: Wafer-Scale Growth of Sb2Te3 for Photodetectors Bibliography

The direct epitaxial growth of multilayer BN by atomic layer deposition is of critical significance forfo two-dimensional device applications. X-ray photoelectron spectroscopy (XPS) and low energy electron diffraction (LEED) demonstrate layer-by-layer BN epitaxy on two different substrates. One substrate was a monolayer of RuO2(110) formed on a Ru(0001) substrate, the other was an atomically clean Ni(111) single crystal. Growth was accomplished atomic layer deposition (ALD) cycles of BCl3/NH3 at 600 K substrate temperature and subsequent annealing in ultrahigh vacuum (UHV). This yielded stoichiometric BN layers, and an average BN film thickness linearly proportional to the number of BCl3/NH3 cycles. The BN(0001)/RuO2(110) interface had negligible charge transfer or band bending as indicated by XPS and LEED data indicate a 30° rotation between the coincident BN and oxide lattices. The atomic layer epitaxy of BN on an oxide surface suggests new routes to the direct growth and integration of graphene and BN with industrially important substrates, including Si(100). XPS and LEED indicated epitaxial deposition of h-BN(0001) on the Ni(111) single crystal by ALD, and subsequent epitaxially aligned graphene was deposited by chemical vapor deposition (CVD) of ethylene at 1000 K. Direct multilayer, in situ growth of h-BN on magnetic substrates such as Ni is important for spintronic device applications. Solid-state electrolytes (SSEs) are of significant interest for their promise as lithium-ion conducting materials but are prone to degradation due to lithium carbonate formation on the surface upon exposure to atmosphere, adversely impacting Li ion conduction. In situ XPS monitored changes in the composition of the SSE Li garnet (Li6.5La3Zr1.5Ta0.5O12, LLZTaO) upon annealing in UHV and upon Ar+ ion sputtering. Trends in core level spectra demonstrate that binding energy (BE) calibration of the Li 1s at 56.4 eV, yields a more consistent interpretation of results than the more commonly used standard of the adventitious C 1s at 284.8 eV. Annealing one ambient-exposed sample to >1000 K in UHV effectively reduced surface carbonate and oxygen, leaving significant amounts of carbon in lower oxidation states. A second ambient-exposed sample was subjected to 3 keV Ar+ ion sputtering at 500 K in UHV, which eliminated all surface carbon, and reduced the O 1s intensity and BE. These methods present alternative approaches to lithium carbonate removal than heating or polishing in inert atmospheres and are compatible with fundamental surface science studies. In particular, the data show that sputtering at mildly elevated temperatures yields facile elimination of carbonate and other forms of surface carbon. This is in contrast to annealing in either UHV or in noble gas environments, which result in carbonate reduction, but with significant remnant coverages of other forms of carbon.

Deposition of solid state materials span a wide variety of methods and often utilize high energy sources such as plasmas and ultra-violet light resulting in a wide variety of characteristics and applications. A fundamental understanding is essential for furthering the applications of these materials which include catalysis, molecular filtration, electronics, sensing devices, and energy storage among others. A combination of experimental and theoretical work is presented here on several materials including 2D silicates on Pd, boron oxide, and vanadium oxynitride. Silicate formation under low energy electron microscopy demonstrate film permeability to oxygen, while ab initio molecular dynamics simulations reveal the possible initial mechanisms associated with the formation of boron oxide films during atomic layer deposition. Lastly, vanadium oxynitrides have shown preferential sputtering of N over O sites and theoretical binding energies serve as a guide for assigning experimental x-ray photoelectron spectra.

Block copolymer (BCP) thin film patterns, generated using directed self-assembly (DSA) of diblock copolymers, have shown excellent promise as templates for semiconductor device manufacturing since they have the potential to produce feature pitches and sizes well below 20 nm and 10 nm, respectively, using current 193 nm optical lithography. The goal of this work is to explore block copolymers with sufficient thermodynamics driving force (as described by the Flory Huggins interaction parameter, χ) for phase separation at these smallest lengths scales. Here, poly(styrene)-b-poly(hydroxystyrene) is investigated since the PHOST domain is known to form extensive hydrogen bond networks resulting in increased χ due to this strong enthalpic interaction. In this work, nitroxide mediated polymerization (NMP) techniques were utilized to produce PS-b-PHOST diblock copolymers with a range of molecular weights (5000-30000) with low PDI approaching 1.2. The phase separation of low molecular weight PS-b-PHOST on neutral underlayer substrates via solvent annealing provided thin film vertical lamellae with 13 nm pitch. These results illustrate the improved resolution of PS-b-PHOST compared with the current industry standard of PS-b-PMMA (with 20 nm pitch). The directed self assembly of lamellar PS-b-PHOST patterns with 18 nm pitch via graphoepitaxy is demonstrated. Also, a highly selective atomic layer deposition (ALD) and etch technique was investigated which provided selective block removal of (PS-b-PHOST) block copolymer patterns which initially exhibited no inherent etch contrast. In this process, the PS domain is removed leaving a high fidelity etch relief pattern of the original block copolymer template. Finally, an alternative system is presented, namely Poly(trimethylsilylstyrene)-block-poly(hydroxystyrene) (PTMSS-b-PHOST), which utilizes silicon containing functionality in one of the blocks, providing high etch contrast. PTMSS-b-PHOST patterns were also exposed to oxygen plasma allowing selective block removal of the PS domain without the need for additional ALD processing steps.

<p>Thin films play an important role in science and technology today. By combining different materials, properties for specific applications can be optimised. In this thesis growth of copper, copper(I) oxide and copper(I) nitride on two different substrates, amorphous SiO₂ and single crystalline α-Al₂O₃ by the so called Atomic Layer Deposition (ALD) techniques has been studied. This technique allows precise control of the growth process at monolayer level on solid substrates. Other characteristic features of ALD are that it produces films with excellent step coverage and good uniformity even as extremely thin films on complicated shaped substrates.</p><p>Alternative deposition schemes were developed for the materials of interest. It was demonstrated that use of intermediate water pulses affected the deposition pathways considerably. By adding water, the films are thought to grow via formation of an oxide over-layer instead of through a direct reaction between the precursors as in the case without water.</p><p>For growth of copper(I) nitride from Cu(hfac)₂ and ammonia no film growth occurred without adding water to the growth process. The Cu₃N films could be transformed into conducting copper films by post annealing. In copper growth from CuCl and H₂ the water affected film growth on the alumina substrates considerably more than on the fused silica substrates. The existence of surface -OH and/or -NH_x groups was often found to play an important role, according to both theoretical calculations and experimental results.</p>

Thin films play an important role in science and technology today. By combining different materials, properties for specific applications can be optimised. In this thesis growth of copper, copper(I) oxide and copper(I) nitride on two different substrates, amorphous SiO2 and single crystalline α-Al2O3 by the so called Atomic Layer Deposition (ALD) techniques has been studied. This technique allows precise control of the growth process at monolayer level on solid substrates. Other characteristic features of ALD are that it produces films with excellent step coverage and good uniformity even as extremely thin films on complicated shaped substrates. Alternative deposition schemes were developed for the materials of interest. It was demonstrated that use of intermediate water pulses affected the deposition pathways considerably. By adding water, the films are thought to grow via formation of an oxide over-layer instead of through a direct reaction between the precursors as in the case without water. For growth of copper(I) nitride from Cu(hfac)2 and ammonia no film growth occurred without adding water to the growth process. The Cu3N films could be transformed into conducting copper films by post annealing. In copper growth from CuCl and H2 the water affected film growth on the alumina substrates considerably more than on the fused silica substrates. The existence of surface -OH and/or -NHx groups was often found to play an important role, according to both theoretical calculations and experimental results.

The following is the accepted manuscript of the original article: Marcel Melzer, Thomas Waechtler, Steve Müller, Holger Fiedler, Sascha Hermann, Raul D. Rodriguez, Alexander Villabona, Andrea Sendzik, Robert Mothes, Stefan E. Schulz, Dietrich R.T. Zahn, Michael Hietschold, Heinrich Lang and Thomas Gessner “Copper oxide atomic layer deposition on thermally pretreated multi-walled carbon nanotubes for interconnect applications”, Microelectron. Eng. 107, 223-228 (2013). Digital Object Identifier: 10.1016/j.mee.2012.10.026 Available via http://www.sciencedirect.com or http://dx.doi.org/10.1016/j.mee.2012.10.026 © 2013 Elsevier B.V. Carbon nanotubes (CNTs) are a highly promising material for future interconnects. It is expected that a decoration of the CNTs with Cu particles or also the filling of the interspaces between the CNTs with Cu can enhance the performance of CNT-based interconnects. The current work is therefore considered with thermal atomic layer deposition (ALD) of CuxO from the liquid Cu(I) β-diketonate precursor [(nBu3P)2Cu(acac)] and wet oxygen at 135°C. This paper focuses on different thermal in-situ pre-treatments of the CNTs with O2, H2O and wet O2 at temperatures up to 300°C prior to the ALD process. Analyses by transmission electron microscopy show that in most cases the CuxO forms particles on the multi-walled CNTs (MWCNTs). This behavior can be explained by the low affinity of Cu to form carbides. Nevertheless, also the formation of areas with rather layer-like growth was observed in case of an oxidation with wet O2 at 300°C. This growth mode indicates the partial destruction of the MWCNT surface. However, the damages introduced into the MWCNTs during the pre treatment are too low to be detected by Raman spectroscopy.

Carbon nanotubes (CNTs) are a highly promising material for future interconnects. It is expected that the decoration of CNTs with Cu particles or also the filling of the interspaces between the CNTs with Cu instead of the currently used SiO2 can enhance the performance of CNT-based interconnects. Due to the high aspect ratio of CNTs an appropriate deposition technique has to be applied which is able to coat such structures uniformly. The current work is therefore considered with thermal atomic layer deposition (ALD) of CuxO from the liquid Cu (I) β-diketonate precursor [(nBu3P)2Cu(acac)] and wet oxygen at 135°C on variously pretreated multi-walled CNTs. The different in-situ pre-treatments of the CNTs with oxygen, water vapor and wet oxygen in a temperature range from 100 to 300°C at a pressure of 1.33 mbar have been carried out prior to the ALD to enable uniform nucleation on the otherwise chemical inert CNT surface. The reduction of the CuxO as well as the filling of the space between the CNTs is not part of this work. Variations of the oxidation temperature as well as the oxidation agents resulted in different growth modes of the CuxO. An oxidation with wet oxygen at 300°C yielded in a partially layer like growth of the CuxO. It is expected that this growth mode is connected to a partial destruction of the outer CNT shell due to the oxidation. However, the damage introduced to the CNTs was not high enough to be detected by Raman spectroscopy. For all other investigated pretreatments, the formation of nanoparticles (NPs) was observed by electron microscopy. This formation of CuxO NPs can be explained by the metal-tube-interaction. Furthermore, the NPs probably decorate defect sites of the CNTs due to their higher reactivity. Additionally, analysis of energy-dispersive X-ray spectroscopy and spectroscopic ellipsometry measurements suggests that the used precursor [(nBu3P)2Cu(acac)] requires reactive oxygen surface groups for initiating the ALD growth. The observation of layer-like growth of CuxO on CNTs pretreated with wet oxygen at 300°C appears promising for deposition processes of Cu seed layers on CNTs. However, more aggressive pretreatments at higher temperatures or with more aggressive oxidation agents could be required to enable layer like growth on the entire CNTs.

<p> As a possible alternative for growing seed layers required for electrochemical Cu deposition of metallization systems in ULSI circuits, the atomic layer deposition (ALD) of Cu is under consideration. To avoid drawbacks related to plasma-enhanced ALD (PEALD), thermal growth of Cu has been proposed by two-step processes forming copper oxide films by ALD which are subsequently reduced. </p> <p> This talk, given at the 8th International Conference on Atomic Layer Deposition (ALD 2008), held in Bruges, Belgium from 29 June to 2 July 2008, summarizes the results of thermal ALD experiments from [(^<i>n</i>Bu₃P)₂Cu(acac)] precursor and wet O₂. The precursor is of particular interest as it is a liquid at room temperature and thus easier to handle than frequently utilized solids such as Cu(acac)₂, Cu(hfac)₂ or Cu(thd)₂. Furthermore the substance is non-fluorinated, which helps avoiding a major source of adhesion issues repeatedly observed in Cu CVD. </p> <p> As result of the ALD experiments, we obtained composites of metallic and oxidized Cu on Ta and TaN, which was determined by angle-resolved XPS analyses. While smooth, adherent films were grown on TaN in an ALD window up to about 130°C, cluster-formation due to self-decomposition of the precursor was observed on Ta. We also recognized a considerable dependency of the growth on the degree of nitridation of the TaN. In contrast, smooth films could be grown up to 130°C on SiO₂ and Ru, although in the latter case the ALD window only extends to about 120°C. To apply the ALD films as seed layers in subsequent electroplating processes, several reduction processes are under investigation. Thermal and plasma-assisted hydrogen treatments are studied, as well as thermal treatments in vapors of isopropanol, formic acid, and aldehydes. So far these attempts were most promising using formic acid at temperatures between 100 and 120°C, also offering the benefit of avoiding agglomeration of the very thin ALD films on Ta and TaN. In this respect, the process sequence shows potential for depositing ultra-thin, smooth Cu films at temperatures below 150°C. </p>

The atomic layer deposition (ALD) of copper oxide films from [(ⁿBu₃P)₂Cu(acac)] and wet oxygen on SiO₂ and TaN has been studied in detail by spectroscopic ellipsometry and atomic force microscopy. The results suggest island growth on SiO₂, along with a strong variation of the optical properties of the films in the early stages of the growth and signs of quantum confinement, typical for nanocrystals. In addition, differences both in growth behavior and film properties appear on dry and wet thermal SiO₂. Electron diffraction together with transmission electron microscopy shows that nanocrystalline Cu₂O with crystallites < 5 nm is formed, while upon prolonged electron irradiation the films decompose and metallic copper crystallites of approximately 10 nm precipitate. On TaN, the films grow in a linear, layer-by-layer manner, reproducing the initial substrate roughness. Saturated growth obtained at 120&deg;C on TaN as well as dry and wet SiO₂ indicates well-established ALD growth regimes. <br> &copy; 2009 The Electrochemical Society. All rights reserved.