O presente trabalho tem por objetivo apresentar, analisar e discutir as relações estabelecidas de Stefan Zweig no período de exílio, utilizando sua correspondência entre 1940 e 1942. Grande escritor de cartas, Zweig possui uma vasta correspondência com escritores, intelectuais, editores, amigos e familiares; existem cartas já publicadas, em edições desde a década de 1960, mas muitas ainda encontram-se inéditas em arquivos na Europa, na América do Sul e na América do Norte. Nesse sentido, o presente trabalho se dividiu em três partes: primeira parte de coleta documental, in loco, em dois arquivos, a citar o Deutsches Literaturarchiv Marbach, DLA, localizado na cidade de Marbach a. N., na Alemanha e o Arquivo da Biblioteca Nacional, BN, no Rio de Janeiro, Brasil; a segunda parte foi a leitura das cartas e separação de um primeiro corpus, o qual foi traduzido. Na primeira seleção, foram levados em conta aspectos que pudessem ressaltar as relações de Zweig com escritores e personalidades da época, europeus, norte-americanos e brasileiros, e cujo conteúdo pudesse trazer elementos para posterior análise; e a terceira parte do trabalho constituiu no desenvolvimento da dissertação e a análise em si das cartas, as quais puderam ser separadas em três núcleos temáticos em comum: (i) Zweig entre o Mundo de Ontem e o País do Futuro; (ii) Zweig e a literatura; e (iii) Zweig em seu isolamento. Como base teórica do trabalho foi utilizado um texto escrito por Zweig, Kunst des Briefes, no qual ele discute as características pertinentes ao gênero epistolar e o estatuto literário da carta. Textos teóricos de epistolografia também foram utilizados para dar suporte à base teórica do trabalho. / This work aims to present, analyze and discuss relations established by Stefan Zweig during this exile time, by using his letters between 1940 and 1942. A great letter writer, Zweig has a great number of letters with intellectuals, editors, friends, relatives; there are some letters which have already been published, in editions since 1960s, but there are many that are still unpublished and are kept in archives in Europa, South America and North America. Therefore this work was divided in three parts: the first part was the in loco documental research in two archives e.g. Deutsches Literaturarchiv Marbach, DLA, located in Marbach a. N. city, in Germany and Arquivo da Biblioteca Nacional, BN, in Rio de Janeiro, Brazil; the second part was to read and separate the letters from a first corpus, which was totally translated to Portuguese. On this first selection aspects were taken into account, that could show the relations between Zweig and European, American and Brazilian writers and intellectuals from his epoch, and that had a content which could have brought elements for the afterward analysis; and the third part was composed by the letters analysis itself, which could be separated in three different thematic groups: (i) Zweig between the World of Yesterday and the Land of the Future; (ii) Zweig and the literature; e (iii) Zweig in his own isolation. As theoretical basis a Stefan Zweigs text was used, called Kunst des Briefes, in which he discusses mainly characteristics about the letter genre and the literary status of the letter. Epistolography theoretical texts were also used to support this work.

Submitted by Vasti Diniz (vastijpa@hotmail.com) on 2017-09-11T13:33:18Z No. of bitstreams: 1 arquivototal.pdf: 2568503 bytes, checksum: df847883585ac25cc1e993ba9c1fcd9f (MD5) / Made available in DSpace on 2017-09-11T13:33:18Z (GMT). No. of bitstreams: 1 arquivototal.pdf: 2568503 bytes, checksum: df847883585ac25cc1e993ba9c1fcd9f (MD5) Previous issue date: 2017-02-24 / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior - CAPES / The opening a energy gap in graphene is probably one of the most important and urgent topics in its research currently, since most of the proposed applications for graphene in nanoelectronic devices require the ability to adjust its gap. In materials similar to graphene as BN and BC2N, the tuning of some properties is also indispensable so that they can be used as basic components of future nanoelectronic and spintronic. Graphene nanoribbons are strong candidates in this regard. All these systems have widely tunable properties and there are several theoretical and experimental methods which can be used for this purpose, one of them is to incorporate defects, since these defects have been obtained experimentally in these systems. In this context, using first-principles calculations, based on the density functional theory (DFT), we investigate alterations in the structural, electronic, energetic and magnetic properties due to the inclusion of different types of defects in monolayers and nanoribbons of graphene, BN and hybrid graphene-BC2N. As a result of the controlled inclusion of these defects, a series of new results were observed, as well as the tuning of the structural, electronic, energetic and magnetic properties in these systems. / A abertura de um gap de energia no grafeno é provavelmente um dos temas mais importantes e urgentes em sua pesquisa atualmente, uma vez que, a maioria das aplicações propostas para o grafeno em dispositivos nanoeletrônicos requer a capacidade de ajustar seu gap. Em materiais similares ao grafeno como BN e o BC2N o ajuste de algumas propriedades também é indispensável para que eles possam fazer parte como componentes ativos na nanoeletrônica e spintrônica no futuro. As nanofitas são fortes candidatas nesse sentido. Todos esses sistemas possuem propriedades bastante ajustáveis e existem vários métodos teóricos e experimentais que podem ser usados para este fim, um deles, é a inclusão de defeito, defeitos têm sido obtido experimentalmente nesses sistemas. Neste contexto, usando cálculos de primeiros princípios baseados na teoria do funcional da densidade (DFT), investigamos as mudanças provocadas nas propriedades eletrônicas, energéticas, estruturais e magnéticas devido à inclusão de vários tipos de defeitos em monocamadas e nanofitas de grafeno, BN e híbridas de grafeno-BC2N. Como resultado da inclusão controlada desses defeitos, observamos uma série de novos resultados, bem como o ajuste de várias propriedades para esses sistemas através da inclusão controlada de defeitos.

O presente trabalho tem por objetivo apresentar, analisar e discutir as relações estabelecidas de Stefan Zweig no período de exílio, utilizando sua correspondência entre 1940 e 1942. Grande escritor de cartas, Zweig possui uma vasta correspondência com escritores, intelectuais, editores, amigos e familiares; existem cartas já publicadas, em edições desde a década de 1960, mas muitas ainda encontram-se inéditas em arquivos na Europa, na América do Sul e na América do Norte. Nesse sentido, o presente trabalho se dividiu em três partes: primeira parte de coleta documental, in loco, em dois arquivos, a citar o Deutsches Literaturarchiv Marbach, DLA, localizado na cidade de Marbach a. N., na Alemanha e o Arquivo da Biblioteca Nacional, BN, no Rio de Janeiro, Brasil; a segunda parte foi a leitura das cartas e separação de um primeiro corpus, o qual foi traduzido. Na primeira seleção, foram levados em conta aspectos que pudessem ressaltar as relações de Zweig com escritores e personalidades da época, europeus, norte-americanos e brasileiros, e cujo conteúdo pudesse trazer elementos para posterior análise; e a terceira parte do trabalho constituiu no desenvolvimento da dissertação e a análise em si das cartas, as quais puderam ser separadas em três núcleos temáticos em comum: (i) Zweig entre o Mundo de Ontem e o País do Futuro; (ii) Zweig e a literatura; e (iii) Zweig em seu isolamento. Como base teórica do trabalho foi utilizado um texto escrito por Zweig, Kunst des Briefes, no qual ele discute as características pertinentes ao gênero epistolar e o estatuto literário da carta. Textos teóricos de epistolografia também foram utilizados para dar suporte à base teórica do trabalho. / This work aims to present, analyze and discuss relations established by Stefan Zweig during this exile time, by using his letters between 1940 and 1942. A great letter writer, Zweig has a great number of letters with intellectuals, editors, friends, relatives; there are some letters which have already been published, in editions since 1960s, but there are many that are still unpublished and are kept in archives in Europa, South America and North America. Therefore this work was divided in three parts: the first part was the in loco documental research in two archives e.g. Deutsches Literaturarchiv Marbach, DLA, located in Marbach a. N. city, in Germany and Arquivo da Biblioteca Nacional, BN, in Rio de Janeiro, Brazil; the second part was to read and separate the letters from a first corpus, which was totally translated to Portuguese. On this first selection aspects were taken into account, that could show the relations between Zweig and European, American and Brazilian writers and intellectuals from his epoch, and that had a content which could have brought elements for the afterward analysis; and the third part was composed by the letters analysis itself, which could be separated in three different thematic groups: (i) Zweig between the World of Yesterday and the Land of the Future; (ii) Zweig and the literature; e (iii) Zweig in his own isolation. As theoretical basis a Stefan Zweigs text was used, called Kunst des Briefes, in which he discusses mainly characteristics about the letter genre and the literary status of the letter. Epistolography theoretical texts were also used to support this work.

Aujourd'hui se pose une question fondamentale sur le futur de l'électronique actuelle. De plus en plus, des circuits hybrides intégrant de nouvelles fonctionnalités sont fabriqués. On envisage même, à plus long terme, des circuits basés sur une technologie différente de l'approche CMOS utilisée actuellement. Une de ces technologies est la spintronique qui tire profit du spin, degré de liberté supplémentaire de l'électron. Elle a rapidement fait ses preuves par le passé dans le stockage non volatile binaire (disques durs) et s'oriente aujourd'hui vers de nouvelles mémoires magnétiques ultra-performantes et basse consommation les MRAMs (Magnetic Random Access Memories). En parallèle, une nouvelle catégorie de matériaux à fort potentiel a émergé : les matériaux bidimensionnels (2D). Ces matériaux, dont le fer de lance est le graphène (une couche d'un atome d'épaisseur de graphite), offrent de nouvelles propriétés inégalées. Leur combinaison via la fabrication d'hétérostructures et la capacité d'avoir un contrôle de leur épaisseur à l'échelle atomique pourrait devenir un atout majeur en électronique et plus particulièrement en spintronique. L'objectif de cette thèse a été l'étude de l'intégration et la démonstration du potentiel en termes de fonctionnalités et de performances de ces nouveaux matériaux 2D au sein de jonctions tunnel magnétiques (MTJs), le dispositif prototype de la spintronique. Au cours de cette thèse, nous avons poursuivi les travaux initiés au laboratoire sur l'intégration dans des MTJs du graphène obtenu via une méthode de dépôt CVD (dépôt chimique en phase vapeur) directe sur l’électrode ferromagnétique inférieure. Nous avons démontré que les propriétés de filtrage en spin et de membrane protectrice contre l'oxydation de l'électrode ferromagnétique (FM) sous-jacente s'étendaient à une unique couche de graphène. Par ailleurs, nous avons aussi pu étudier et améliorer significativement l'amplitude du filtrage en spin et du signal de magnétorésistance observé via l'optimisation des procédés de croissance et d'intégration et le choix de différentes configurations de matériaux ferromagnétiques (Ni(111), Co...). De forts effets de filtrage de spin ont ainsi pu être observés avec des magnétorésistances allant de -15% à plus de +80%, soit presque trois fois l'état de l'art. En parallèle, nous nous sommes aussi intéressés à un autre matériau 2D, le nitrure de bore hexagonal (h-BN), isolant isomorphe du graphène qui s'apparenterait à une barrière tunnel d'un seul atome d'épaisseur. Afin d’étudier le h-BN dans une MTJ, nous avons décidé d’exploiter à nouveau le principe d’une croissance directe par CVD du matériau 2D sur le matériau FM. Des mesures CT-AFM (Conductive Tip Atomic Force Microscopy) nous ont permis de démontrer les propriétés de barrière tunnel homogène du h-BN ainsi que le contrôle possible de la hauteur de barrière avec le nombre de couches de h-BN. De plus, des mesures électriques et de magnétotransport nous ont permis de confirmer l’intégration réussie de la barrière tunnel h-BN dans notre MTJ. Nous avons pu obtenir les premiers résultats de forte magnétorésistance pour du h-BN avec une amplitude de la magnétorésistance de +50%, plus d'un ordre de grandeur au-dessus de l'état de l'art, révélant le potentiel du h-BN. Nous avons enfin aussi pu démontrer l'importance du couplage entre le h-BN et l'électrode FM offrant un potentiel de contrôle inédit sur les effets de filtrage en spin et allant jusqu'à rendre le h-BN métallique. Lors de cette thèse, nous avons pu montrer que l’intégration du graphène et du h-BN dans des MTJs via la croissance directe par CVD est un procédé privilégié pour tirer pleinement profit de leurs propriétés. Les résultats obtenus de forte magnétorésistance et de filtrage en spin laissent entrevoir le fort potentiel du graphène, du h-BN mais aussi des autres nouveaux matériaux 2D à venir pour les MTJs. Ces études ouvrent une nouvelle voie d’exploration pour les MTJs : les 2D-MTJs. / Nowadays a critical issue is raised concerning the future of current electronics. Increasingly, hybrid circuits with new functionalities are manufactured. A longer term approach is even contemplated with circuits based on a technology different from the one currently used (CMOS technology). One of these envisioned technologies is spintronics, which benefits from the spin properties, the electron additional degree of freedom. Spintronics has quickly proven its worth in the past in the field of non volatile data storing (hard drives) and is today moving towards new fast and ultra-low-power magnetic random access memories the MRAMs. Meanwhile, these last few years, a new category of materials with high potential has emerged : the bidimensional materials (2D). These materials, with graphene (one atomically thick layer of graphite) as the forerunner, provide new unrivaled properties. Their combination in the form of heterostructures and the ability to obtain a control of their thickness at the atomic scale could be a major asset for electronics and more specifically spintronics. The purpose of this thesis has been the study of the integration and the demonstration of the potential in terms of functionalities and performances of these new 2D materials inside the prototypical spintronic device: the magnetic tunnel junction (MTJ). During this thesis, we have pursued the work initiated by the laboratory on the integration of graphene in MTJs with direct CVD deposition method (chemical vapor deposition) on the underlying ferromagnetic electrode. We demonstrated that the spin filtering and protective membrane properties (preventing the oxidation of the underlying ferromagnetic electrode (FM)) observed earlier expand to a graphene monolayer. Furthermore, we have also studied and improved significantly the amplitude of the spin filtering and the magnetoresistance signal observed. This was done thanks to the optimization of the growth process, integration, and choice of the different configurations of ferromagnetic materials in our structures (Ni(111), Co...). High spin filtering effects have been observed as a function of the configurations with magnetoristances ranging from -15% to beyond +80%, which is almost three times the state of the art. Meanwhile, we looked at another 2D material, the hexagonal boron nitride (h-BN), an insulating isomorph of graphene which could be considered as an atomically thin tunnel barrier. In order to study h-BN into a MTJ, we took again advantage of direct CVD growth of the 2D material on a ferromagnet. CT-AFM (Conductive Tip Atomic Force Microscopy) measurements allowed us to demonstrate the homogeneous tunnel barrier properties of h-BN and the possible control of the barrier height with the number of h-BN layers. Simultaneously, electrical and magnetotransport measurement in the complete junction allowed us to confirm the achieved integration of the h-BN tunnel barrier into our MTJ. We have been able to obtain the first results of high magnetoresistance for h-BN with values one order of magnitude beyond the state of the art. A magnetoresistance of +50% has been reached, thanks to the optimization of the growth process revealing the potential of h-BN. We have also been able to show the important role of the coupling between h-BN and the FM electrode offering an unprecedented potential of control on the spin filtering effects, ranging up to making the h-BN metallic. During this thesis, we have been able to demonstrate that the integration of graphene and h-BN in MTJs through direct CVD growth is a promising process in order to fully exploit their properties. The results obtained of high magnetoresistance and spin filtering point to the high potential for MTJs of graphene and h-BN but also to all the new 2D materials to come. These studies pave the way for exploring a new path for MTJs : the 2D-MTJs.

L’utilisation des composites à matrice céramiques (CMC), et particulièrement les matériaux SiC/SiC, à la place des alliages métalliques dans les moteurs aéronautiques peut permettre de réduire leur consommation. Ils possèdent en effet des propriétés physiques et mécaniques très intéressantes à haute température : faible densité, résistance élevée aux chocs thermiques et rupture non-fragile. Dans ces matériaux, une fine couche est insérée entre les fibres et la matrice : l’interphase. Le nitrure de bore pyrolytique est le matériau d’interphase de choix pour les applications visées. La bibliographie souligne bien la nécessité et la difficulté de « contrôler » l’intensité des liaisons interfaciales fibres/matrice (F/M) grâce à l’interphase. Mais l’influence exacte de la cristallinité et de l’épaisseur des interphases de type BN sur son contrôle, et par conséquent sur le comportement mécanique final du CMC industriel est encore mal connue.Une première problématique abordée dans cette thèse est l’échelle du CMC de laboratoire à utiliser. En effet jusqu’ici, les matériaux modèles les plus couramment employés sont les mini- et les micro- composites 1D. Ils peuvent être élaborés facilement et rapidement par dépôt chimique en phase vapeur mais ne rendent pas compte de phénomènes inévitablement présents au sein du composite industriel. C’est pourquoi l’utilisation de nouveaux matériaux modèles 2D comme les « monostrates » comprenant un pli de tissu, l’interphase BN et une matrice de SiC dont la porosité peut être comblée par du Si comme dans le cas des CMC industriels est plus pertinente et est proposée. Cependant, de par la faible épaisseur des éprouvettes, les protocoles de caractérisation et de tests mécaniques ont dû être revus. Il s’agit notamment de caractériser la liaison F/M par deux paramètres : la contrainte de cisaillement de la liaison interfaciale (τi) et le module de cisaillement du matériau (G12).Pour la partie mécanique, des essais de traction monotone et cyclée dans l’axe des fibres du renfort (exploités à l’aide de modèles micromécaniques), des essais de cisaillement Iosipescu, ainsi que des essais de push out ont été mis au point et exploités. Des analyses de micro caractérisation par microscopie électronique (MEB, FIB-MEB, MET) ont été réalisées avant et après essais mécaniques avec des interphases de différentes configurations afin de relier les différences de microstructures et d’épaisseurs aux chemins de fissuration matricielle et aux comportements mécaniques macroscopiques des composites. La liaison F/M la plus forte est notamment obtenue quand le degré de cristallisation et l’anisotropie structurale du BN sont peu élevés, pourvu que l’épaisseur de l’interphase soit suffisante. / The use of ceramic matrix composites (CMC), and particularly SiC/SiC materials, in place of metal alloys in aircraft engines has the potential to reduce their fuel consumption. They have very interesting physical and mechanical properties at high temperatures: low density, high resistance to thermal shock and non- brittle failure. In these materials, a thin layer is inserted between the fibres and the matrix: the interphase. Pyrolytic boron nitride is the interphase material of choice to achieve the desired applications. The bibliography clearly highlights the need and difficulty of "controlling" the intensity of fibre/matrix interfacial bonds (F/M) thanks to the interphase. But the exact influence of the crystallinity and thickness of BN-type interphases on its control, and consequently on the final mechanical behaviour of the industrial CMC, is still insufficiently known.A first issue addressed in this thesis is the scale of the CMC to be used in the laboratory. Indeed, so far, the most commonly used model materials are 1D mini and micro composites. They can be easily and quickly prepared by chemical vapour deposition but do not account for phenomena inevitably present in the industrial composite. Therefore, the use of new 2D model materials such as "monostrates" comprising a single-ply woven, the BN interphase and a SiC matrix in which the porosity can be filled with Si as in the case of industrial CMCs is more relevant and is proposed. However, due to the thinness of the specimens, the characterization and mechanical testing protocols had to be reviewed. This involves characterizing the F/M bond by two parameters: the shear stress of the interfacial bond (τi) and the shear modulus of the material (G12).For the mechanical part, monotonic and cycled tensile tests in the fibre axis of the reinforcement (operated using micromechanical models), Iosipescu shear tests, as well as push-out tests were developed and used. Micro characterization analyses by electron microscopy (SEM, FIB-SEM, TEM) were performed before and after mechanical tests with interphases of different configurations in order to link the differences in microstructures and thicknesses to the matrix cracking paths and macroscopic mechanical behaviours of the composites. The strongest F/M bond is obtained notably when the degree of crystallization and structural anisotropy of the BN are low, provided that the interphase is thick enough.

Depuis leurs découvertes dans les années 60 par Dewar, les composés BN-hétérocycliques ont subi un développement croissant, s’accentuant pendant la dernière décennie. Ce travail de thèse mené en collaboration avec le Pr S-Y LIU de Boston Collège (États-Unis) et le Pr L. WEBER de l’Université de Bielefeld (Allemagne), a permis la synthèse, ainsi que la caractérisation par spectroscopie photoélectronique à rayonnement UV de nouveaux systèmes. Dans une première partie représentée par les chapitres II, III et IV, nous abordons l’étude de la structure électronique des composés suivants : 1,2-dihydro-1,2-azaborine (1), N-Me-1,2-BN-toluene (2), N-Me-1,3-BN-toluene (3), 1,2-dihydro-1-aza-2-boranaphtalene (4), 1,2-dihydro-1-aza-2-boranthracene (5), 1,2-dihydro-1-aza-2-boranthracene (6), 1,2-dihydro-1-aza-2-boraphenanthrene (7), 1,3,2-benzodiazaborole (8), 1,9,8-benzodiazaborole (9), N-tert-butyl[1,3,2]diazaborolo[1,5-a]-pyridine (10), 1,3,2-trihydro[1,3,2]diazaborolo[1,5-a]-pyridine (11). Afin de compléter les propriétés physico-chimiques de ces nouveaux systèmes et d’aider à l’interprétation des spectres photoélectroniques, l’utilisation de calculs quantiques tels que la théorie de la fonctionnelle de la densité (DFT), la théorie fonctionnelle de la densité en fonction du temps (TD-DFT), la fonction de Green (OVGF), la méthode du troisième ordre partiel (P3), ou encore l’interaction de configuration (SAC-CI) ont été utilisées. Dans le Chapitre V, nous présentons une étude comparative entre les énergies ionisations théoriques et expérimentales. / Since the Dewar’s discovering in 60 years, the BN-heterocycles has experienced an important development during the last decade. This thesis presents our work on the synthesis and on the electronic structure characterization by Ultra-Violet photoelectron spectroscopy (UV-PES), followed in collaboration with the Pr SY LIU from the Boston College (USA) and the Pr L. WEBER from the University of Bielefeld (Germany). The first part corresponding to the chapter II, III and IV, describe the electronic structure analysis of: 1,2-dihydro-1,2-azaborine (1), N-Me-1,2-BN-toluene (2), N-Me-1,3-BN-toluene (3), 1,2-dihydro-1-aza-2-boranaphtalene (4), 1,2-dihydro-1-aza-2-boranthracene (5), 1,2-dihydro-1-aza-2-boranthracene (6), 1,2-dihydro-1-aza-2-boraphenanthrene (7), 1,3,2-benzodiazaborole (8), 1,9,8-benzodiazaborole (9), N-tert-butyl[1,3,2]diazaborolo[1,5-a]-pyridine (10), 1,3,2-trihydro[1,3,2]diazaborolo[1,5-a]-pyridine (11). In order to provide more information on the physical chemistry properties and to interpret the photoelectron spectra, the quantum chemical calculations of ionization energies have been followed using the Density Functional Theory (DFT), the Time-Dependent Density Functional Theory (TD-DFT), the Outer Valence Green’s Function (OVGF), the Partial third order (P3), the Symmetry Adapted Cluster-Configuration Interaction (SAC-CI). Moreover, the comparative analysis of theoretical and the experimental ionization energies are presented.

La performance mécanique des composites à matrice céramique repose en partie sur le contrôle de la liaison interfaciale et le choix des matériaux. Ces travaux s’intéressent au renforcement de la liaison interfaciale en traitant la surface des fibres SiC de dernière génération : les Hi-Nicalon S. L’objectif est d’établir une accroche chimique et/ou mécanique principalement avec l’interphase BN. Des composites modèles, minicomposites élaborés par voie CVI (Chemical Vapor Infiltration) sont utilisés comme base de travail. La quantification de la force de la liaison interfaciale s’effectue en évaluant l’énergie de liaisons interfaciales Gci issues d’essais de traction, et en calculant la contrainte de cisaillement τ par essais de pushout. Dans un premier temps, les fibres HNS dont les surfaces ont été légèrement modifiées, ont été testées avec l’interphase classique PyC. La liaison interfaciale sur minicomposites reste faible. Différentes traitements chimiques ont été effectués à la surface des fibres dans l’optique de renforcer la liaison interfaciale avec le BN, interphase plus résistance à l’oxydation que le PyC. Au préalable, les conditions d’élaborations de l’interphase BN ont été étudiées. / Mechanical properties of ceramic composites can be improved by controlling interfacial bonding and choosing materials. To enhance interfacial bonding, treatment on the last SiC fiber, Hi-Nicalon S surface are proposed in this work. The aim is to allow chemical and/or mechanical bonds mainly with BN interphase. For this, composites models, minicomposites are elaborated by CVI (Chemical Vapor Infiltration). Quantification of the strength of interfacial bonding is based by evaluating interfacial bonding energy Gci with tensile tests, and by calculating interfacial shear stress τ with push-out tests. Firstly, Hi-Nicalon S fibers whose surfaces have been slightly modified have been tested with classic interphase PyC. Interfacial bonding on minicomposites is weak. Different treatments have been performed on surface fibers to enhance interfacial bonding with BN, which have a better resistance oxidation than PyC. Before, elaboration parameters of BN interphase have been studied.

Made available in DSpace on 2016-08-18T18:19:29Z (GMT). No. of bitstreams: 1 Wesdney dos Santos Melo.pdf: 3867399 bytes, checksum: 9eb817cf696dfb625968d6de8e41101c (MD5) Previous issue date: 2011-04-18 / FUNDAÇÃO DE AMPARO À PESQUISA E AO DESENVOLVIMENTO CIENTIFICO E TECNOLÓGICO DO MARANHÃO / In this work we studied the structural and electronics properties (10; 0)@(17; 0) of double wall BN nanotubes bundle without intercalation and intercalated with the H2SO4 molecule, submitted to variations of hydrostatic pressure. For to study such properties we used the ab initio method employing density functional theory in the approach of the generalized gradient approximation for the exchange and correlation terms. All the simulations were performed using the SIESTA code. In the analysis of all results we observed that the traverse circular section of the nanotubos suffers a structural modification when the applied pressure around 1 GPa both system. Another structural change observed, both systems, appears around 10 GPa. The analysis the electronic properties was accomplished through the bands structure, where it was observed that the two systems considered are semiconductors, but with reduction in the energy gap. The analysis of the population of Mülliken, in the case of the doped system with H2SO4 molecule, shows that the nanotubes transfer charge to H2SO4 molecule, and the transference increases with pressure. / No presente trabalho estudamos as propriedades estruturais e eletrônicas de bundles de nanotubos de BN de dupla camada (10; 0)@(17; 0) sem intercalação e intercalados com a molécula H2SO4, submetidos à variação de pressão hidrostática. Para estudar tais propriedades usamos o método ab initio, baseado na teoria do funcional da densidade e da aproximação do gradiente generalizado para o termo de troca e correlação. Para realizar essas simulações utilizamos o código SIESTA. Realizamos a análise de todos os resultados obtidos e observamos que a seção transversal circular dos nanotubos sofre uma modificação geométrica quando a pressão aplicada é em torno de 1 GPa, tanto no sistema sem dopagem como no sistema dopado. Outra mudança estrutural observada, em ambos os sistemas, ocorre em torno de 10 GPa. A análise das propriedades eletrônicas foi realizada através da estrutura de bandas e foi observado que os dois sistemas considerados permanecem semicondutores, mas com redução no gap de energia. A análise da população de Mülliken no caso do sistema dopado mostra que os nanotubos doam cargas para a molécula H2SO4 e a quantidade de carga doada pelo tubo aumenta conforme a pressão aplicada aumenta.

Made available in DSpace on 2016-08-18T18:19:29Z (GMT). No. of bitstreams: 1 Samir Silva.pdf: 2648726 bytes, checksum: c089ee5506a5e19afed5dafba9cbc09f (MD5) Previous issue date: 2007-08-21 / In this work were studied the electronic, vibrations and structural properties of boron nitride nanotube bundles (16,0), (12,0) and (8,0), when submitted to the hydrostatic pressure changes. To study such properties, we used the ab initio method employing density functional theory in the approach of the generalized gradient approximation. All the simulations were performed using of the siesta code. The obtained results showed that the circular cross section of each one of the studied bundles undergoes a deformation (elliptic) when applied pressure reaches the value of P > 1,0 GPa for the bundle (16,0), P > 2,0 GPa for the bundle (12,0) and for values greater then 6,5 GPa for the bundle (8,0). For each pressure interval it was calculated the percent relative volume, cohesive energy, modes of vibrations and the band structures. The analysis of the electronic properties, through the band structures, indicates that the characteristics semiconducting of boron nitride nanotubes is preserved during the pressure increasing. / Neste trabalho foram estudadas as propriedades eletrõnicas, vibracionais e estruturais de bundles de nanotubos de nitreto de boro (16,0), (12,0) e (8,0) submetidos à variação de pressão hidrostástica. Para estudar tais propriedades, utilizamos o método ab initio com uso da teoria do funcional da densidade na aproximação do gradiente generalizado. Todas simulações foram realizadas com a utilização do código siesta. Com os resultados encontrados foi observado que a seção transversal circular de cada um dos bundles estudados sofre uma deformação (elíptica) quando a pressão aplicada atinge o valor de P > 1,0 GPa para o bundles (16,0), P > 2,0 GPa para o bundles (12,0) e P > 6,5 GPa para os bundles (8,0). Para cada intervalo de pressão aplicada calculamos o percentual do volume relativo, energia coesiva, modos vibracionais e a estrutura de bandas. A análise das propriedades eletrônicas, através da estrutura de bandas, indica que as características semicondutoras dos nanotubos de nitreto de boro são preservadas durante o aumento da pressão.

Electronic systems are an indivisible part of modern life. Every day, new materials, devices, passive components, antennas for wireless communication are needed to be designed and developed. In particular, flexible and biocompatible wearable devices are urgent required for medical and industrial applications. The great hope lies in the materials with high crystalline quality and flexibility such as graphene and other 2D semiconductors and insulators. Doping is a conventional tool for tailoring of the electronic properties of the functional materials. Here we examine application of the widely used the electron donor species to the graphene and hexagonal boron nitride monolayer (h-BN). For each we determine surface-interface properties and the full electronic band structure using the combination of the surface science methods such as angle-integrated and angle resolved photoemission (XPS, ARPES), electron diffraction (LEED) and photo absorption (XAS). As the result we provided insight into mechanisms underlying the doping gating of the graphene h-BN monolayer by the alkali metals. We fully characterized their surface and interface structure. Finally we studied the interplay between electrons and phonons in the doped graphene and we demonstrated that Ca-doped graphene is the promising candidate for realizing superconductivity in graphene.